JPH07142664A - Manufacture of resin-sealed semiconductor device - Google Patents
Manufacture of resin-sealed semiconductor deviceInfo
- Publication number
- JPH07142664A JPH07142664A JP5288929A JP28892993A JPH07142664A JP H07142664 A JPH07142664 A JP H07142664A JP 5288929 A JP5288929 A JP 5288929A JP 28892993 A JP28892993 A JP 28892993A JP H07142664 A JPH07142664 A JP H07142664A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead
- leads
- semiconductor device
- external
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は樹脂封止半導体装置の製
造方法に関し、特に高精細リードピッチの樹脂封止型半
導体装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a resin-encapsulated semiconductor device, and more particularly to a method of manufacturing a resin-encapsulated semiconductor device having a high definition lead pitch.
【０００２】[0002]
【従来の技術】従来の半導体装置の製造方法は、まず、
半導体素子を搭載する素子搭載部と、この素子搭載部の
周囲に対向して配置された内部リードと、内部リードに
接続する外部リードと、内部リード側の各外部リード間
を連結するタイバー及びこれらを支える枠部を有するリ
ードフレームを形成する。次に、半導体素子を素子搭載
部に銀ペースト等の接着剤により接着後、半導体素子の
電極と内部リードの先端を金属細線により結線する。次
に、半導体素子，素子搭載部及び内部リードを樹脂によ
り封止する。ここで、タイバーは、内部リードが樹脂に
より固定される封止工程までの間内部リードの変形の防
止を行い、また、封止工程での外部リード間に流れ出す
樹脂を塞き止める機能を持つ。なお、大型の半導体装置
においては、内部リードの変形をさらに防止するためポ
リイミド等からなる絶縁テープを内部リード上に枠状に
貼付形成している。2. Description of the Related Art A conventional semiconductor device manufacturing method is as follows.
An element mounting portion on which a semiconductor element is mounted, internal leads arranged around the element mounting portion so as to face each other, external leads connected to the internal leads, and tie bars connecting between the external leads on the internal lead side and these. Forming a lead frame having a frame portion for supporting. Next, after the semiconductor element is bonded to the element mounting portion with an adhesive such as silver paste, the electrodes of the semiconductor element and the tips of the internal leads are connected with a thin metal wire. Next, the semiconductor element, the element mounting portion, and the internal leads are sealed with resin. Here, the tie bar has a function of preventing deformation of the inner leads until the encapsulation step in which the inner leads are fixed by the resin, and also having a function of blocking resin flowing out between the outer leads in the encapsulation step. In addition, in a large-sized semiconductor device, an insulating tape made of polyimide or the like is formed in a frame shape on the inner lead in order to further prevent the inner lead from being deformed.
【０００３】図２（ａ）〜（ｃ）は従来の樹脂封止半導
体装置の製造方法の一例を説明する工程順に示した要部
斜視図である。図２（ａ）に示すように、タイバー３は
外部リード２の間に流出する樹脂を塞き止めており、樹
脂封止部１からタイバー３迄の間の外部リード２の間に
は外部リード２とほほ同一の厚さの樹脂であるダム樹脂
４が充填されている。タイバー３は外部リード２同士を
電気的にも接続しており、また樹脂封止後はその機能を
必要としないため、図２（ｂ）に示すように、ダム樹脂
４とともに金型により切断，除去される。なお、ダム樹
脂４の除去方法としては樹脂やガラスの粉末を高圧空気
や高圧水とともに吹きつけるホーニング法及び電解脱脂
後高圧水を吹きつける方法等を単独で用いることもある
が、多くは金型による除去と組み合わせて実施されてい
る。この時、同時に外部リード２上にもれ出た樹脂の薄
バリも除去される。2 (a) to 2 (c) are perspective views showing essential parts in the order of steps for explaining an example of a conventional method for manufacturing a resin-sealed semiconductor device. As shown in FIG. 2 (a), the tie bar 3 blocks the resin flowing out between the external leads 2, and the external leads 2 between the resin sealing portion 1 and the tie bar 3 are external leads. A dam resin 4 which is a resin having the same thickness as that of 2 is filled. Since the tie bar 3 also electrically connects the external leads 2 to each other and does not require its function after the resin sealing, as shown in FIG. To be removed. As a method for removing the dam resin 4, a honing method in which resin or glass powder is sprayed with high-pressure air or high-pressure water, a method in which high-pressure water is sprayed after electrolytic degreasing, or the like may be used alone, but most of them are molds. It is carried out in combination with the removal by. At this time, at the same time, thin burrs of the resin leaking on the outer leads 2 are also removed.
【０００４】さらに、レーザー照射によってダム樹脂４
を除去する方法もあり、特公昭６２−２２９８４９号公
報，昭６２−２４７５５３号公報，平３−１０６０６３
号公報等にその記載がある。Further, the dam resin 4 is irradiated by laser irradiation.
There is also a method of removing the impurities, for example, Japanese Patent Publication No. Sho 62-229849, Japanese Patent Publication No. 62-247553, Hei 3-106063.
The publication is described in the publication.
【０００５】タイバー３及びダム樹脂４を除去した後、
図２（ｃ）に示すように、外部リード２に半田付が可能
な様に半田めっきを施し、枠部５から外部リード２を切
り離し、外部リード２を所定の形状に成形し樹脂封止半
導体装置を完成させる。After removing the tie bar 3 and the dam resin 4,
As shown in FIG. 2C, the outer leads 2 are solder-plated so that they can be soldered, the outer leads 2 are separated from the frame 5, and the outer leads 2 are molded into a predetermined shape to form a resin-sealed semiconductor. Complete the device.
【０００６】なお、従来のリードフレームの材質（金
属）と同じ材質で形成されるタイバー３を絶縁物の樹脂
等により置き替える方法として、例えば特開昭６４−７
２５４９号公報にその記載があり、またタイバーの無い
リードフレームを用いて樹脂封止部周縁の外部リード間
に位置する部分に突起を設けた封入金型でその突起をタ
イバーの代わりとして封止樹脂を塞き止める方法として
例えば特開平２−３１０９５５号公報にその記載があ
る。いずれの場合も外部リード２間に封止樹脂が流れ込
むことを防止する施策を採っている。As a method of replacing the tie bar 3 formed of the same material (metal) as that of the conventional lead frame with a resin such as an insulating material, for example, Japanese Patent Laid-Open No. 64-7 is used.
No. 2549, and using a lead frame without a tie bar, an encapsulating mold provided with protrusions at portions located between outer leads on the periphery of the resin encapsulation portion uses the protrusions instead of the tie bars for encapsulating resin. For example, Japanese Patent Application Laid-Open No. 2-310955 discloses the method for blocking the above. In any case, measures are taken to prevent the sealing resin from flowing between the external leads 2.
【０００７】[0007]
【発明が解決しようとする課題】従来使用されているタ
イバーを有するリードフレームでは、樹脂封止後タイバ
ーを除去する必要があるため、最近の樹脂封止半導体装
置の傾向である多ピン化による狭ピッチ化に伴ってタイ
バー切断が困難となっている。リードピッチが０．４ｍ
ｍではパンチ摩耗が著しくなり、またリードピッチが
０．３ｍｍでは破損が多発しタイバーを切断することが
技術的に不可能となっているという問題点がある。In a lead frame having a tie bar which has been conventionally used, it is necessary to remove the tie bar after resin encapsulation. It becomes difficult to cut tie bars as the pitch becomes wider. Lead pitch is 0.4m
When the lead pitch is 0.3 mm, the punch wear becomes remarkable, and when the lead pitch is 0.3 mm, breakage occurs frequently and it is technically impossible to cut the tie bar.
【０００８】なお、その他の方法として、前述したよう
にタイバーを樹脂に置き替えた樹脂タイバー法や外部リ
ード間に位置する部分に突起を設けた封入金型で突起を
タイバーの代わりとする突起付金型法もあるが、いずれ
も封止樹脂塞き止め効果が充分でなく樹脂バリが多く発
生するという問題点がある。As another method, as described above, a resin tie bar method in which the tie bar is replaced with resin, or an encapsulating mold provided with a projection at a portion located between the external leads is provided with a projection that replaces the tie bar. Although there is a die method, all of them have a problem that the sealing resin blocking effect is not sufficient and many resin burrs are generated.
【０００９】さらに、部分的に樹脂が漏れると樹脂の圧
力によりリードが変形するという不具合が生じる。ま
た、樹脂タイバー法は、液状の樹脂や接着剤を使用する
ため良い絶縁性を持った樹脂が得られないことが多く、
かつ樹脂タイバー部が封止樹脂の外部に露出しているた
め狭ピッチである樹脂封止半導体装置においてリード間
リークが発生する問題点があった。また、前期の突起付
金型法においては突起付金型を精度良く製作すること及
び精度を維持管理することが極めて困難であるという問
題点があった。Further, if the resin partially leaks, the pressure of the resin causes the lead to be deformed. In addition, since the resin tie bar method uses a liquid resin or an adhesive, it is often impossible to obtain a resin having good insulating properties.
Moreover, since the resin tie bar portion is exposed to the outside of the sealing resin, there is a problem that a lead-to-lead leak occurs in the resin-sealed semiconductor device having a narrow pitch. In addition, in the projection mold method of the previous term, it was extremely difficult to manufacture the projection mold accurately and maintain the accuracy.
【００１０】本発明の目的は、封止樹脂塞き止め効果が
充分でバリの発生やリードの変形およびリード間のリー
クがなく、多ピン化による狭ピッチ化に対応できる樹脂
封止半導体装置を提供することにある。An object of the present invention is to provide a resin-encapsulated semiconductor device which has a sufficient sealing resin blocking effect, is free from burr formation, lead deformation and lead-leakage, and can cope with a narrow pitch due to the increase in the number of pins. To provide.
【００１１】[0011]
【課題を解決するための手段】本発明の樹脂封止半導体
装置の製造方法は、半導体素子を搭載する素子搭載部
と、この素子搭載部の周囲に対向してそれぞれが間隔を
おいて配置された内部リードとこの内部リードに接続し
それぞれが間隔をおいて配置された外部リードとこの外
部リードに接続しこの外部リードと前記内部リードを支
持する枠部とを有するリードフレームを成形する工程
と、前記半導体素子を前記素子搭載部に接着し搭載する
工程と、前記半導体素子の電極と前記内部リードを金属
細線で結線する工程と、前記半導体素子と前記素子搭載
部と前記内部リードを樹脂にて封止すると同時に前記外
部リード間に前記樹脂を充填する工程と、レーザにより
前記外部リード間の前記樹脂を除去する工程と、電解脱
脂する工程と、２００ｋｇ／ｃｍ2 をこえない高水圧を
吹きつける工程と、前記外部リードを所定の形状に切断
成形する工程とを含む。According to a method of manufacturing a resin-sealed semiconductor device of the present invention, an element mounting portion on which a semiconductor element is mounted and a periphery of the element mounting portion are arranged facing each other with a space therebetween. Forming a lead frame having an inner lead, an outer lead connected to the inner lead and spaced apart from each other, and a frame portion connected to the outer lead and supporting the outer lead and the inner lead; A step of bonding and mounting the semiconductor element to the element mounting portion, a step of connecting the electrode of the semiconductor element and the internal lead with a thin metal wire, and a step of connecting the semiconductor element, the element mounting portion and the internal lead to a resin. 200, and the step of filling the resin between the external leads at the same time as sealing with the resin, the step of removing the resin between the external leads by laser, and the step of electrolytic degreasing. and a step of blowing a high pressure not exceeding g / cm 2, and a step of cutting and forming the outer leads into a predetermined shape.
【００１２】[0012]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.
【００１３】図１（ａ）〜（ｃ）は本発明の一実施例を
説明する工程順に示した要部斜視図である。まず、半導
体素子を搭載する素子搭載部と、この素子搭載部の周囲
に対向してそれぞれが間隔をおいて配置された内部リー
ドと、この内部リードに接続しそれぞれが間隔をおいて
配置された外部リードと、この外部リードに接続し外部
リードと内部リードを支持する枠部とを有し、タイバー
のないリードフレームを成形する。なお、大型，多ピン
半導体装置においては、従来と同様内部リード上に絶縁
テープを枠状に貼り付形成する。1 (a) to 1 (c) are perspective views of a main part showing the steps in order to explain one embodiment of the present invention. First, an element mounting portion on which a semiconductor element is mounted, internal leads that face each other around the element mounting portion and are spaced apart from each other, and are connected to the internal leads and are spaced apart from each other. A lead frame having an outer lead and a frame portion connected to the outer lead and supporting the outer lead and the inner lead and having no tie bar is formed. In the case of a large-sized, multi-pin semiconductor device, an insulating tape is attached and formed in a frame shape on the inner leads as in the conventional case.
【００１４】次に、図１（ａ）に示すように、従来と同
じ方法で銀ペースト等により素子搭載部に半導体素子を
接着搭載後、半導体素子の電極と内部リードの先端を金
属細線により結線し、半導体素子と素子搭載部と内部リ
ードを樹脂により封止し樹脂封止部１を形成する。この
とき、内部リードと外部リード２間に図２（ａ）に示す
従来のリードフレームのタイバー３が無いので全ての外
部リード２間に枠部５までリード間樹脂６が充填され、
それぞれの内部リードの両側にかかる圧力差が小さいた
め樹脂封止時の圧力差による内部リードの変形は発生す
ることなく封止される。Next, as shown in FIG. 1 (a), after the semiconductor element is bonded and mounted on the element mounting portion by silver paste or the like in the same manner as in the conventional method, the electrodes of the semiconductor element and the tips of the internal leads are connected by a fine metal wire. Then, the semiconductor element, the element mounting portion, and the internal lead are sealed with resin to form the resin sealing portion 1. At this time, since there is no tie bar 3 of the conventional lead frame shown in FIG. 2A between the inner lead and the outer lead 2, the inter-lead resin 6 is filled up to the frame portion 5 between all the outer leads 2.
Since the pressure difference applied to both sides of each inner lead is small, the inner leads are not deformed due to the pressure difference at the time of resin encapsulation.
【００１５】次に、図１（ｂ）に示すように、外部リー
ド２間に充填されたリード間樹脂６を除去する。リード
間樹脂６の除去方法としては、レーザを用いて良好な結
果が得られた。レーザ以外の従来の方法である電解脱脂
後の高圧水（圧力：２００ｋｇ／ｃｍ2 以上）を吹きつ
ける方法や樹脂，ガラス等のホーニング法を試みたが、
外部リード長が短い（厚み：０．５ｍｍ，幅：０．２ｍ
ｍ，長さ：２ｍｍ以下）場合はリード変形が少く比較的
良好であったが、外部リード長が長く（２ｍｍ以上）な
ると大きくリード曲りが発生し実用性がなかった。レー
ザによるリード間樹脂６の除去は樹脂のみを焼き飛ばす
ため外部リード２には直接力が懸らないため、リード長
に関係なく外部リード２の変形の発生は無く、さらに外
部リード２上の樹脂バリも同時に除去された。Next, as shown in FIG. 1B, the inter-lead resin 6 filled between the outer leads 2 is removed. As a method of removing the inter-lead resin 6, good results were obtained by using a laser. I tried a conventional method other than laser, such as spraying high-pressure water (pressure: 200 kg / cm 2 or more) after electrolytic degreasing, or a honing method for resin, glass, etc.
External lead length is short (thickness: 0.5 mm, width: 0.2 m
m, length: 2 mm or less), the lead deformation was small and relatively good, but when the external lead length was long (2 mm or more), large lead bending occurred and it was not practical. Since the resin 6 between the leads is removed by the laser, only the resin is burnt off, so that the external lead 2 is not subjected to a direct force. Therefore, the external lead 2 is not deformed regardless of the lead length. Burrs were also removed at the same time.
【００１６】レーザの照射条件としては、３０Ｗのレー
ザ発振源を用いた場合、スキャンスピード：（４００〜
１．０００ｍｍ）／秒，スキャン間隔：２００μｍで、
リード間樹脂６及び外部リード２上の樹脂薄バリを完全
に除去することができた。但し、エッチングリードフレ
ームの場合、エッチングによって形成される外部リード
２側面部のわずかな凹凸によって陰となる一部に樹脂や
レーザ照射軌跡間の樹脂等が完全に除去できない場合が
あるので、これらを完全に除去するためには従来の電解
脱脂法により外部リード２と残存樹脂との密着性を劣化
させた後高圧水を吹きつけて樹脂を除去する方法を併用
する必要がある。このとき、高圧水の圧力を２００ｋｇ
／ｃｍ2 以下とすることで外部リード２の変形を防止で
き、かつ残存樹脂を完全に除去することができた。な
お、電解脱脂の条件としては、市販の薬品で６５℃，１
Ａ／ｄｍ2 ，１５分間とした。As a laser irradiation condition, when a 30 W laser oscillation source is used, a scan speed: (400 to
1.000 mm) / sec, scan interval: 200 μm,
The resin thin burrs on the inter-lead resin 6 and the outer leads 2 could be completely removed. However, in the case of an etching lead frame, it may not be possible to completely remove the resin or the resin between the laser irradiation tracks due to slight unevenness on the side surface of the external lead 2 formed by etching. In order to completely remove it, it is necessary to use a method of removing the resin by spraying high pressure water after deteriorating the adhesion between the external lead 2 and the residual resin by the conventional electrolytic degreasing method. At this time, the pressure of the high pressure water is 200 kg.
By setting it to be / cm 2 or less, the deformation of the external lead 2 could be prevented, and the residual resin could be completely removed. The conditions for electrolytic degreasing are 65 ° C and 1
A / dm 2 , 15 minutes.
【００１７】最後に、図１（ｃ）に示すように、リード
間樹脂６を除去した後、外部リード２を所定の形状に切
断成形し樹脂封止半導体装置を得た。Finally, as shown in FIG. 1C, after removing the inter-lead resin 6, the external lead 2 was cut and molded into a predetermined shape to obtain a resin-sealed semiconductor device.
【００１８】[0018]
【発明の効果】以上説明したように本発明は、タイバー
のないリードフレームを使用しているので金型によるタ
イバーを切断除去する必要がなく、狭ピッチの外部リー
ドにも適用でき、０．４ｍｍ，０．３ｍｍさらに０．２
５ｍｍ以下の狭ピッチ化にも対応できるという効果があ
る。As described above, since the present invention uses the lead frame having no tie bar, it is not necessary to cut and remove the tie bar by the mold, and the present invention can be applied to a narrow pitch external lead, and can be applied to 0.4 mm. , 0.3 mm and 0.2
There is an effect that it is possible to cope with a narrow pitch of 5 mm or less.
【００１９】また、外部リードにタイバー残りが存在し
ないため均一かつ精度の高い成形ができ、さらに機種ご
とに高価な切断金型を準備する必要もなくレーザ照射装
置のみで全ての機種に対応できるので作業効率を高める
ことができるという効果がある。Further, since there is no tie bar residue on the external leads, uniform and highly accurate molding can be performed, and it is not necessary to prepare an expensive cutting die for each model, and all the models can be supported by only the laser irradiation device. There is an effect that work efficiency can be improved.
【００２０】一方、切断金型以外の方法である樹脂タイ
バー法や突起付金型法による外部リードの変形の発生，
電気リーク等の信頼性の劣化，突起付金型の製作及び維
持管理等の問題点も解決できるという効果もある。On the other hand, the external lead is deformed by a resin tie bar method or a protruding die method other than the cutting die,
There is also an effect that problems such as deterioration of reliability such as electric leak and manufacturing and maintenance of a mold with protrusions can be solved.
【図１】（ａ）〜（ｃ）は本発明の一実施例を説明する
工程順に示した要部斜視図である。FIG. 1A to FIG. 1C are perspective views showing a main part in the order of steps for explaining an embodiment of the present invention.
【図２】（ａ）〜（ｃ）は従来の樹脂封止半導体装置の
製造方法の一例を説明する工程順に示した要部斜視図で
ある。FIG. 2A to FIG. 2C are perspective views of a main part showing the order of steps for explaining an example of a conventional method for manufacturing a resin-sealed semiconductor device.
１ 樹脂封止部 ２ 外部リード ３ タイバー ４ ダム樹脂 ５ 枠部 ６ リード間樹脂 1 Resin sealing part 2 External lead 3 Tie bar 4 Dam resin 5 Frame part 6 Resin between leads
Claims (2)
の素子搭載部の周囲に対向してそれぞれが間隔をおいて
配置された内部リードとこの内部リードに接続しそれぞ
れが間隔をおいて配置された外部リードとこの外部リー
ドに接続しこの外部リードと前記内部リードを支持する
枠部とを有するリードフレームを成形する工程と、前記
半導体素子を前記素子搭載部に接着し搭載する工程と、
前記半導体素子の電極と前記内部リードを金属細線で結
線する工程と、前記半導体素子と前記素子搭載部と前記
内部リードを樹脂にて封止すると同時に前記外部リード
間に前記樹脂を充填する工程と、レーザにより前記外部
リード間の前記樹脂を除去する工程と、前記外部リード
を所定の形状に切断成形する工程とを含むことを特徴と
する樹脂封止半導体装置の製造方法。1. An element mounting portion on which a semiconductor element is mounted, internal leads arranged to face the periphery of the element mounting portion and spaced apart from each other, and connected to the internal leads to be spaced apart from each other. A step of molding a lead frame having a formed external lead and a frame portion supporting the external lead and the internal lead, the step of adhering and mounting the semiconductor element on the element mounting portion;
A step of connecting the electrode of the semiconductor element and the inner lead with a thin metal wire; a step of sealing the semiconductor element, the element mounting portion and the inner lead with a resin, and at the same time filling the resin between the outer leads; A method for manufacturing a resin-encapsulated semiconductor device, comprising: a step of removing the resin between the external leads with a laser; and a step of cutting and molding the external leads into a predetermined shape.
除去する工程の後に、電解脱脂する工程と、２００ｋｇ
／ｃｍ2 をこえない高圧水を吹きつける工程とを含むこ
とを特徴とする請求項１記載の樹脂封止半導体装置の製
造方法。2. A step of electrolytically degreasing after the step of removing the resin between the external leads by the laser, and 200 kg
The method of manufacturing a resin-encapsulated semiconductor device according to claim 1, further comprising the step of spraying high-pressure water having a pressure of not more than / cm 2 .
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5288929A JPH07142664A (en) | 1993-11-18 | 1993-11-18 | Manufacture of resin-sealed semiconductor device |
| KR1019940030289A KR0145647B1 (en) | 1993-11-18 | 1994-11-17 | Manufacture of resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5288929A JPH07142664A (en) | 1993-11-18 | 1993-11-18 | Manufacture of resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07142664A true JPH07142664A (en) | 1995-06-02 |
Family
ID=17736639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5288929A Pending JPH07142664A (en) | 1993-11-18 | 1993-11-18 | Manufacture of resin-sealed semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH07142664A (en) |
| KR (1) | KR0145647B1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289757A (en) * | 2001-03-27 | 2002-10-04 | New Japan Radio Co Ltd | Lead cutting method of electronic component |
| JP2010010187A (en) * | 2008-06-24 | 2010-01-14 | Renesas Technology Corp | Method of manufacturing semiconductor integrated circuit device |
| JP2011091194A (en) * | 2009-10-22 | 2011-05-06 | Renesas Electronics Corp | Method of manufacturing semiconductor device, and method of manufacturing electronic device |
| CN107195552A (en) * | 2016-03-14 | 2017-09-22 | 富士电机株式会社 | The minimizing technology of burr and the manufacture method of semiconductor device |
-
1993
- 1993-11-18 JP JP5288929A patent/JPH07142664A/en active Pending
-
1994
- 1994-11-17 KR KR1019940030289A patent/KR0145647B1/en not_active IP Right Cessation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289757A (en) * | 2001-03-27 | 2002-10-04 | New Japan Radio Co Ltd | Lead cutting method of electronic component |
| JP2010010187A (en) * | 2008-06-24 | 2010-01-14 | Renesas Technology Corp | Method of manufacturing semiconductor integrated circuit device |
| US8338927B2 (en) | 2008-06-24 | 2012-12-25 | Renesas Electronics Corporation | Semiconductor device with the leads projected from sealing body |
| JP2011091194A (en) * | 2009-10-22 | 2011-05-06 | Renesas Electronics Corp | Method of manufacturing semiconductor device, and method of manufacturing electronic device |
| US8435867B2 (en) | 2009-10-22 | 2013-05-07 | Renesas Electronics Corporation | Method of manufacturing semiconductor device and method of manufacturing electronic device |
| CN107195552A (en) * | 2016-03-14 | 2017-09-22 | 富士电机株式会社 | The minimizing technology of burr and the manufacture method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950015724A (en) | 1995-06-17 |
| KR0145647B1 (en) | 1998-08-01 |
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| A02 | Decision of refusal |
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