CN107171292B - A kind of device inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker - Google Patents
A kind of device inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker Download PDFInfo
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- CN107171292B CN107171292B CN201710565467.4A CN201710565467A CN107171292B CN 107171292 B CN107171292 B CN 107171292B CN 201710565467 A CN201710565467 A CN 201710565467A CN 107171292 B CN107171292 B CN 107171292B
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- circuit breaker
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
Abstract
The present invention relates to a kind of devices for inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker, belong to DC solid circuit breaker technical field, the device includes DC solid circuit breaker, it further include current detecting system, drive system, power semiconductor solid switch device, buffer circuit branch and energy absorption branch, buffer circuit branch routes varistor and constitutes, for inhibiting the overvoltage at DC solid circuit breaker shutdown initial stage；Energy absorption branch is also made of varistor, for absorbing the energy of direct current system parasitic inductance.By the reasonable disposition of buffer circuit part and energy absorbing portion, the overvoltage at SiC MOSFET DC solid circuit breaker shutdown initial stage can be significantly inhibited.The device provided by the invention for inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker, reliability that is simple and effective and can be improved DC solid circuit breaker.
Description
Technical field
The invention belongs to DC solid circuit breaker technical fields, are related to a kind of based on SiC MOSFET DC solid circuit breaker
Inhibit the device of shutdown overvoltage.
Background technique
DC solid circuit breaker requires to promptly isolate and remove failure, is indispensable one of the equipment of direct current system.
As silicon carbide (Silicon Carbide, SiC) technology is constantly progressive, by silicone carbide metal oxide field-effect tube
The DC solid that (Metal Oxide Semiconductor Field-Effect Transistor, SiC MOSFET) is constituted
For breaker because its switching speed is fast, conduction loss is low, and can work at higher ambient temperatures, in recent years in distribution network applications
It attracts attention.However, comparing Si device, SiC MOSFET turn-off speed is fast, up to tens ns, it is easy to lead to biggish wink
When due to voltage spikes therefore how to inhibit the voltage oscillation in SiC MOSFET turn off process, crest voltage is reduced, for direct current
Solid circuit breaker and the safe and reliable operation of direct current system are of great significance.Currently used resistance-capacitance
(resistance capacitance, RC) and resistance-capacitor-diode (resistance capacitance diode,
RCD) selection Yu matching of the method parameter of buffer circuit need to consider many factors, there is certain difficulty in actual use
Degree；And the method for increasing gate driving resistance is used, the turn-off time is extended, breaker loss is increased, has sacrificed SiC
The advantage of MOSFET, it is also possible to cause the PN junction of power device to overheat since the turn-off time is too long, damage device；Using di/dt
The method of control circuit realizes excessively complexity, and component is too many, and reliability also will receive a degree of influence.Therefore, in order to
It solves SiC MOSFET and is used for the shutdown initial voltage overshooting problem that DC solid circuit breaker easily occurs, be badly in need of a kind of simple and have
A kind of method of effect.
Summary of the invention
Shutdown is inhibited based on SiC MOSFET DC solid circuit breaker in view of this, the purpose of the present invention is to provide one kind
The device of overvoltage has to effectively realize based on the inhibition of SiC MOSFET DC solid circuit breaker shutdown initial stage overvoltage
Conducive to the reliability for improving DC solid circuit breaker.
In order to achieve the above objectives, the invention provides the following technical scheme:
A kind of device inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker includes DC solid open circuit
Device, the DC solid circuit breaker further include current detecting system, drive system and power semiconductor solid switch device；It is described
The division that main circuit is used in main circuit is arranged in power semiconductor solid switch device, and the current detecting system is for detecting
The main circuit current of the DC solid circuit breaker, the drive system receives the signal from current detecting system, and controls
The division of the power semiconductor solid switch device；
Whether the current detecting system breaks down and determines that breaker turns off the moment for detection circuit；
The drive system is for controlling DC solid circuit breaker normal work and disjunction；
The power semiconductor solid switch device is for maintaining direct current system to work normally and disengagement failure electricity when failure
Stream guarantees direct current system safety；
The DC solid circuit breaker further includes buffer circuit branch and energy absorption branch, and the buffer circuit branch is
The buffer circuit being made of varistor, for inhibiting the overvoltage at the DC solid circuit breaker shutdown initial stage；
The energy absorption branch is the energy absorption circuit being made of varistor, for absorbing the parasitic electricity of direct current system
The energy of sense.
Further, the energy absorption circuit that the buffer circuit and the varistor that the varistor is constituted are constituted according to
Formula:
It is configured, in formula, a indicates the energy absorption circuit that the buffer circuit that varistor is constituted and varistor are constituted
Voltage rating ratio, UMOV_inIndicate the voltage rating for the buffer circuit that varistor is constituted, UMOV_exIndicate varistor structure
At energy absorption circuit voltage rating.
The beneficial effects of the present invention are: by the present invention in that using varistor as buffer circuit, realize varistor
It absorbs energy and inhibits the separation of overvoltage function, wherein buffer circuit varistor is for inhibiting DC solid circuit breaker to turn off
The overvoltage at initial stage, and energy absorption varistor is reduced for absorbing the energy of direct current system parasitic inductance to pressure-sensitive electricity
The requirement of resistance passes through the specified electricity of the varistor of varistor and energy absorbing portion in reasonable disposition buffer circuit part
Pressure ratio rate can be realized effectively based on the inhibition of SiC MOSFET DC solid circuit breaker shutdown initial stage overvoltage, be conducive to improve
The reliability of DC solid circuit breaker.
Detailed description of the invention
In order to keep the purpose of the present invention, technical scheme and beneficial effects clearer, the present invention provides following attached drawing and carries out
Illustrate:
Fig. 1 is the schematic diagram of the inhibition SiC MOSFET DC solid circuit breaker overvoltage method in the application；
Fig. 2 is the schematic diagram of this method；
Fig. 3, Fig. 4 are the effect emulation figure using this method；
DC solid circuit breaker voltage and absorption energy effect picture when Fig. 5, Fig. 6 are a difference.
Specific embodiment
Below in conjunction with attached drawing, a preferred embodiment of the present invention will be described in detail.
Fig. 1 is the schematic diagram of the inhibition SiC MOSFET DC solid circuit breaker overvoltage method in the application；
The embodiment of the present invention inhibits the device of shutdown overvoltage comprising straight based on SiC MOSFET DC solid circuit breaker
Flow the drive system that solid circuit breaker integrates fault current detection circuit, logic judgment processing circuit and driving circuit, Yi Jizuo
For the power semiconductor of solid-state switch, point in main circuit for main circuit is arranged in power semiconductor solid switch device
It closes, current detecting system is used to detect the main circuit current of DC solid circuit breaker, and logic judgment processing circuit is to current detecting
The signal of circuit output is judged that drive system receives the signal from current detecting system, and it is solid to control power semiconductor
The division of state switching device, in which:
Fault current detection circuit, for judging that fault current reaches the threshold value of some setting, to determine that breaker closes
The disconnected moment；
Logic judgment processing circuit judges for the signal to fault current detection circuit output, is breaking down
When pulse control signal is cut off in time, guarantee device and circuit it is without damage；
Driving circuit, for controlling DC solid circuit breaker normal work and disjunction.
Solid-state switch, disengagement failure electric current guarantees direct current system peace when for maintaining direct current system to work normally and failure
Entirely.
Of the invention further includes buffer circuit part and energy absorbing portion, in which:
Buffer circuit part is made of varistor (Metal Oxide Varistor, MOV), for inhibiting direct current solid
The overvoltage at state breaker shutdown initial stage；
Energy absorbing portion is also made of MOV, for absorbing the energy of direct current system parasitic inductance.
The MOV of MOV and energy absorbing portion in buffer circuit part are configured according to the following equation:
In formula, a indicates the specified electricity for the energy absorption circuit that the buffer circuit that varistor is constituted and varistor are constituted
Pressure ratio rate, UMOV_inIndicate the voltage rating for the buffer circuit that varistor is constituted, UMOV_exIndicate the energy that varistor is constituted
The voltage rating of absorbing circuit.
Buffer circuit part of the invention does not absorb or only absorbs part energy, for inhibiting DC solid disconnected
The overvoltage at road device shutdown initial stage；
Energy absorbing portion of the invention, absorption system overwhelming majority energy；
The ratio of buffer circuit part and energy absorbing portion MOV voltage rating also and should avoid circuit breaker electric from extruding as far as possible
Now vibrate.
In order to further illustrate the principle of this method, as shown in Figure 2:
Due to MOV_inClose to SiC MOSFET, parasitic inductance L 'stRelative to outer ring LstIt is smaller, t1Moment fault current is first
First to MOV_inBranch transfer, electric current IMOV_inIt was slowly increased before this, then rapid increase, and reached its peak value, then reduce, such as schemed
[t in 21,t3] stage.
In [t2,t3] stage, MOV_inBranch current can also be to MOV_exBranch transfer, but, electric current IMOV_exIncreased speed
Spend smaller, this is primarily due to, and outer ring, there are caused by voltage difference by inner ring MOV.As electric current IMOV_inWhen decaying to zero,
Voltage UswitchIt decays to close to MOV_exVoltage UMOV_exLevel, I at this timebreakeTransfer process is also not finished, electric current only to
MOV_exBranch transfer.Work as IswitchWhen being reduced to zero, IMOV_exReach maximum value, IbreakeTransfer process terminates, Uswitch
Reach UMOV_exLevel, at this point, MOV_exStart to absorb energy, IbreakerStart to decay, after certain time, IbreakerIt decays to
Zero, breaker power cut-off, fault current is removed.
During breaker actuation, MOV_inThe time that branch has electric current to flow through is very short, and has flowed only through seldom a part
Electric current, MOV_inThe energy very little of absorption, most energy are by MOV_exAbsorb, but the crest voltage of solid circuit breaker by
MOV_inC-V characteristic determine.
In order to compare the effect that DC solid circuit breaker uses this method, as shown in Figure 3, Figure 4.Comparison with and without
Known to the simulation waveform of this method:
(DC voltage 360V, energy absorption MOV are K385 (i.e. maximum to continue direct current work under identical simulated conditions
Make voltage 385V), parasitic inductance LstFor 6 μ H, cut-off current 11.5A), when not using this method, DC solid circuit breaker is closed
The overvoltage peak value at disconnected initial stage is 1130V, and when using this method, DC solid circuit breaker turns off the overvoltage peak value at initial stage
For 850V, relatively with the voltage peak 840V of buffer circuit MOV, the voltage peak for turning off initial stage reduces 380 V, voltage
Oscillation is also significantly inhibited.
Finally, determining buffer circuit MOV voltage rating according to following formula:
In formula, a indicates the specified electricity for the energy absorption circuit that the buffer circuit that varistor is constituted and varistor are constituted
Pressure ratio rate, UMOV_inIndicate the voltage rating for the buffer circuit that varistor is constituted, UMOV_exIndicate the energy that varistor is constituted
The voltage rating of absorbing circuit.
Be K385 in energy absorption MOV according to above-mentioned formula, and buffer circuit MOV be respectively K385, K420, K505,
When K560, K585, K615, K670, buffer circuit MOV absorbs energy percentage and breaker crest voltage and circuit breaker electric
Pressure, as shown in Figure 5, Figure 6:
1) when 1≤a≤1.2, buffering MOV absorbs energy to be reduced rapidly with the increase of a, and as a > 1.2, buffering MOV absorbs
Energy is slowly reduced with the increase of a, and after a=1.4, buffering MOV absorption energy is very small, is changed unobvious, it is believed that
Whole energy is absorbed by energy absorption MOV, and matched curve is approximately exponential function；
2) breaker crest voltage was linearly increasing with certain slope before this with the increase of a, then reached saturation, slowly increased
Add, but all crest voltages are smaller than not using 1130V when MOV buffer circuit, matched curve is approximately that second order is more
Item formula function, when a reaches 1.45, circuit breaker voltage vibrates, and increasingly severe with the increase of a.
3) it according to above-mentioned analysis, in the voltage rating of selection buffering MOV, needs to comprehensively consider it and absorbs energy, inhibits
Circuit breaker voltage, and circuit breaker voltage should be avoided to vibrate as far as possible, in the present embodiment, buffer the voltage rating of MOV
It is determined according to 1.3 < a < 1.45.
Finally, it is stated that preferred embodiment above is only to illustrate the technical solution of invention rather than limits, although passing through
Above preferred embodiment is described in detail the present invention, however, those skilled in the art should understand that, can be in shape
Various changes are made in formula and to it in details, without departing from claims of the present invention limited range.
Claims (1)
1. a kind of device for inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker includes DC solid open circuit
Device, it is characterised in that: the DC solid circuit breaker further includes that current detecting system, drive system and power semiconductor solid-state are opened
Close device；The division that main circuit is used in main circuit, the current detecting is arranged in the power semiconductor solid switch device
System is used to detect the main circuit current of the DC solid circuit breaker, and the drive system is received from current detecting system
Signal, and control the division of the power semiconductor solid switch device；
Whether the current detecting system breaks down and determines that breaker turns off the moment for detection circuit；
The drive system is for controlling DC solid circuit breaker normal work and disjunction；
The power semiconductor solid switch device is protected for maintaining direct current system to work normally with disengagement failure electric current when failure
Demonstrate,prove direct current system safety；
The DC solid circuit breaker further includes buffer circuit branch and energy absorption branch, the buffer circuit branch and energy
Branch circuit parallel connection is absorbed to be set on the main circuit of the DC solid circuit breaker；
The buffer circuit branch is the buffer circuit being made of varistor, for inhibiting the DC solid circuit breaker to turn off
The overvoltage at initial stage；
The energy absorption branch is the energy absorption circuit being made of varistor, for absorbing direct current system parasitic inductance
Energy；
The energy absorption circuit that the buffer circuit and the varistor that the varistor is constituted are constituted is according to formula:
It is configured, in formula, a indicates the volume for the energy absorption circuit that the buffer circuit that varistor is constituted and varistor are constituted
Constant voltage ratio, UMOV_inIndicate the voltage rating for the buffer circuit that varistor is constituted, UMOV_exIndicate what varistor was constituted
The voltage rating of energy absorption circuit.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710565467.4A CN107171292B (en) | 2017-07-12 | 2017-07-12 | A kind of device inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker |
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| CN201710565467.4A CN107171292B (en) | 2017-07-12 | 2017-07-12 | A kind of device inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker |
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| CN107171292A CN107171292A (en) | 2017-09-15 |
| CN107171292B true CN107171292B (en) | 2019-06-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109066609B (en) * | 2018-07-26 | 2020-03-17 | 西安交通大学 | All-solid-state direct current breaker topological structure based on cascade SiC MOSFET |
| CN111579958B (en) * | 2020-05-20 | 2022-04-05 | 全球能源互联网研究院有限公司 | IGBT switching characteristic test circuit and test method |
| CN111952991B (en) * | 2020-08-11 | 2023-03-21 | 太原理工大学 | Master-slave driving device series-connection type direct current circuit breaker and control method thereof |
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2017
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| CN102593809A (en) * | 2011-01-14 | 2012-07-18 | 同济大学 | Solid-state circuit breaker with over-voltage suppressing function |
| CN104184108A (en) * | 2013-05-21 | 2014-12-03 | 通用电气公司 | DC circuit breaker and control method thereof |
| CN104779593A (en) * | 2015-04-22 | 2015-07-15 | 中国船舶重工集团公司第七一二研究所 | Direct-current solid circuit breaker and control method thereof |
| CN106159882A (en) * | 2016-07-13 | 2016-11-23 | 西安交通大学 | A kind of solid-state direct-current chopper based on SiC MOSFET and control method thereof |
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