CN106159882A - A kind of solid-state direct-current chopper based on SiC MOSFET and control method thereof - Google Patents
A kind of solid-state direct-current chopper based on SiC MOSFET and control method thereof Download PDFInfo
- Publication number
- CN106159882A CN106159882A CN201610551804.XA CN201610551804A CN106159882A CN 106159882 A CN106159882 A CN 106159882A CN 201610551804 A CN201610551804 A CN 201610551804A CN 106159882 A CN106159882 A CN 106159882A
- Authority
- CN
- China
- Prior art keywords
- sic
- oxide
- metal
- semiconductor
- branch road
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of solid-state direct-current chopper based on SiC MOSFET and control method thereof, including SiC DC solid circuit breaker, first power terminal, second power terminal, hybrid switch and control system, SiC DC solid circuit breaker includes damping branch road, change of current branch road and high voltage SiC switch mosfet, first power terminal is successively through damping branch road, high voltage SiC switch mosfet and change of current branch road and the second power terminal are connected, the two ends of hybrid switch are connected with the first power terminal and the second power terminal respectively, the outfan of control system is connected with the control end controlling end and hybrid switch of change of current branch road, this chopper and control method low cost thereof, reliability is higher.
Description
Technical field
The invention belongs to electric and electronic technical field, relate to a kind of solid-state direct-current chopper based on SiC MOSFET and
Control method.
Background technology
In D.C. high voltage transmission, high voltage DC breaker (HVDC breaker) plays and cuts off overload or short circuit current
Effect, plays an important role to the safe and reliable operation of HVDC transmission system.At present, dc circuit breaker is divided into mechanical type straight
Stream chopper, all solid state dc circuit breaker and the hybrid dc circuit breaker of machinery-solid-state.
In recent years, third generation semiconductor material with wide forbidden band carborundum (SiC) with it compared to conventional semiconductor material silicon
(Si) energy gap of 3 times, the thermal conductivity of 3 times, the critical breakdown strength of 10 times, higher carrier saturation drift velocity etc. is excellent
Point, becomes the active material manufacturing power semiconductor.Power semiconductor material based on SiC material is also come out one after another, mesh
Before, JFET, MOSFET of 1.2kV, 1.7kV commercialization, 10kV SiC MOSFET, 15kV SiC IGBT has developed
Success, provides the foundation for high voltage DC breaker application in the future.
In all solid state dc circuit breaker and machinery-solid-state are hybrid, semiconductor device the solid circuit breaker cascaded
Part is the core of whole circuit breaker system.At present, in chopper is applied, in order to meet the requirement of high voltage turn-off capacity,
Need semiconductor device cascade to use and device cascade number is more.Many devices cascade the driving to a high position floating ground device and bring
Difficulty, needs redesign to drive structure to reduce chopper cost, improves breaker reliability.
Summary of the invention
It is an object of the invention to the shortcoming overcoming above-mentioned prior art, it is provided that a kind of solid-state based on SiC MOSFET
Dc circuit breaker and control method thereof, this chopper and control method low cost thereof, reliability is higher.
For reaching above-mentioned purpose, solid-state direct-current chopper based on SiC MOSFET of the present invention includes that SiC direct current is solid
State chopper, the first power terminal, the second power terminal, hybrid switch and control system, SiC DC solid circuit breaker includes resistance
Buddhist nun's branch road, change of current branch road and high voltage SiC switch mosfet, the first power terminal is successively through damping branch road, high voltage SiC MOSFET
Switch and change of current branch road and the second power terminal are connected, the two ends of hybrid switch respectively with the first power terminal and the second power
Terminal is connected, and the outfan of control system is connected with the control end controlling end and hybrid switch of change of current branch road；
Described high voltage SiC switch mosfet includes gate driver, n resistance, n electric capacity and n the first metal-oxide-semiconductor；
The control end of gate driver is connected with control system, the negative pole of gate driver outfan and first electricity
Appearance, change of current branch road, the source electrode of first the first metal-oxide-semiconductor and first resistance are connected, and each resistance is sequentially connected in series, each electric capacity
Being sequentially connected in series, the drain electrode of damping branch road and the n-th electric capacity, the n-th resistance and the n-th the first metal-oxide-semiconductors is connected, previous
The drain electrode of the first metal-oxide-semiconductor is connected with the source electrode of later the first metal-oxide-semiconductor, the circuit between i-th electric capacity and the i-th-1 electric capacity
It is connected with the grid of i-th the first metal-oxide-semiconductor, the positive pole phase of the grid of first the first metal-oxide-semiconductor and gate driver outfan
Connecting, wherein, 2≤i≤n, n are the positive integer more than or equal to 2.
SiC DC solid circuit breaker also includes energy absorber system, wherein, the two ends of energy absorber system respectively with high pressure
The two ends of SiC switch mosfet are connected.
Hybrid switch includes mechanical switch and the second metal-oxide-semiconductor, and wherein, one end of mechanical switch is connected with the first power terminal
Connecing, the other end of mechanical switch and the drain electrode of the second metal-oxide-semiconductor are connected, and the source electrode of the second metal-oxide-semiconductor and the second power terminal are connected
Connecing, the grid of the second metal-oxide-semiconductor is connected with the outfan of control system.
Energy absorber system is spark gap.
Damping branch road is damping resistance.
Change of current branch road is the 3rd metal-oxide-semiconductor, and wherein, the drain electrode of the 3rd metal-oxide-semiconductor is connected with high voltage SiC switch mosfet, the
Source electrode and second power terminal of three metal-oxide-semiconductors are connected, and the grid of the 3rd metal-oxide-semiconductor is connected with control system.
The control method of solid-state direct-current chopper based on SiC MOSFET of the present invention, by the first power terminal with
Second power terminal is connected with circuit or equipment, comprises the following steps:
When circuit or equipment are in normal operating conditions, control system controls change of current branch road and disconnects, and controls mixing and open
Closing conducting, electric current flows through hybrid switch；When circuit or equipment are short-circuited fault, control system controls the conducting of change of current branch road,
Controlling hybrid switch again to disconnect, electric current flows through damping branch road, high voltage SiC switch mosfet and change of current branch road successively, treats that electric current is complete
After total transfer completes, turn off hybrid switch and bear the DC voltage of SiC DC solid circuit breaker conduction voltage drop, then control system
Controlling high voltage SiC switch mosfet to turn off, short circuit energy is absorbed by energy absorber system, prevents high voltage SiC by damping branch road
Oscillation in switch mosfet turn off process, after high voltage SiC switch mosfet complete switches off, short trouble is cut,
High voltage SiC switch mosfet bears DC bus-bar voltage.
The method have the advantages that
Solid-state direct-current chopper based on SiC MOSFET of the present invention and control method thereof when concrete operations,
The driving of one metal-oxide-semiconductor is no longer the drive form that in conventional art, each device is required for special driver, but uses electricity
Holding coupled modes to drive, wherein, first electric capacity is as the driving electric capacity of second the first metal-oxide-semiconductor, and (n-1)th electric capacity is as the
The driving electric capacity of n the first metal-oxide-semiconductor.Meanwhile, each electric capacity also plays transient state all pressure effects, and first electric capacity is as first first
The transient state equalizing capacitance of metal-oxide-semiconductor, the n-th electric capacity is as the transient state equalizing capacitance of the n-th the first metal-oxide-semiconductors；Each first metal-oxide-semiconductor quiet
State is all pressed and is realized by static voltage sharing, and the first metal-oxide-semiconductor is no longer necessary to traditional RCD buffer circuit, and just can to realize sound state equal
Pressure so that the cost of chopper is substantially reduced, and reliability is largely increased.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the circuit diagram of invention mesohigh SiC switch mosfet 2；
Fig. 3 is the circuit diagram of hybrid switch 5 in the present invention.
Wherein, 1 for damping branch road, 2 be high voltage SiC switch mosfet, 3 for energy absorber system, 4 be change of current branch road, 5
For hybrid switch, 6 be control system.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is described in further detail:
With reference to Fig. 1 and Fig. 2, solid-state direct-current chopper based on SiC MOSFET of the present invention includes that SiC direct current is solid
State chopper, the first power terminal A, the second power terminal B, hybrid switch 5 and control system 6, SiC DC solid circuit breaker bag
Including damping branch road 1, change of current branch road 4 and high voltage SiC switch mosfet 2, the first power terminal A is successively through damping branch road 1, high pressure
SiC switch mosfet 2 and change of current branch road 4 are connected with the second power terminal B, the two ends of hybrid switch 5 respectively with the first power
Terminal A and the second power terminal B is connected, the outfan of control system 6 and change of current branch road 4 control end and hybrid switch 5
Control end to be connected；Described high voltage SiC switch mosfet 2 includes gate driver, n resistance, n electric capacity and n individual first
Metal-oxide-semiconductor；The control end of gate driver is connected with control system 6, the negative pole of gate driver outfan and first electric capacity,
Source electrode and first resistance of 4, first the first metal-oxide-semiconductor of change of current branch road are connected, and each resistance is sequentially connected in series, and each electric capacity depends on
Secondary being connected in series, the drain electrode of damping branch road 1 and the n-th electric capacity, the n-th resistance and the n-th the first metal-oxide-semiconductors is connected, previous
The drain electrode of the first metal-oxide-semiconductor is connected with the source electrode of later the first metal-oxide-semiconductor, the circuit between i-th electric capacity and the i-th-1 electric capacity
It is connected with the grid of i-th the first metal-oxide-semiconductor, the positive pole phase of the grid of first the first metal-oxide-semiconductor and gate driver outfan
Connecting, wherein, 2≤i≤n, n are the positive integer more than or equal to 2.
SiC DC solid circuit breaker also includes energy absorber system 3, wherein, the two ends of energy absorber system 3 respectively with height
The two ends of pressure SiC switch mosfet 2 are connected；Energy absorber system 3 is spark gap.
Hybrid switch 5 includes mechanical switch K and the second metal-oxide-semiconductor M, wherein, one end of mechanical switch K and the first power terminal
A is connected, and the other end of mechanical switch K and the drain electrode of the second metal-oxide-semiconductor M are connected, the source electrode of the second metal-oxide-semiconductor M and the second power
Terminal B is connected, and the grid of the second metal-oxide-semiconductor M is connected with the outfan of control system 6.
Damping branch road 1 is damping resistance.
Change of current branch road 4 is the 3rd metal-oxide-semiconductor, and wherein, the drain electrode of the 3rd metal-oxide-semiconductor is connected with high voltage SiC switch mosfet 2,
Source electrode and the second power terminal B of the 3rd metal-oxide-semiconductor are connected, and the grid of the 3rd metal-oxide-semiconductor is connected with control system 6.
The control method of solid-state direct-current chopper based on SiC MOSFET of the present invention is when operation, by the first merit
Rate terminal A and the second power terminal B is connected with circuit or equipment, comprises the following steps:
When circuit or equipment are in normal operating conditions, control system 6 controls change of current branch road 4 and disconnects, and controls mixing
Switch 5 conducting, electric current flows through hybrid switch 5；When circuit or equipment are short-circuited fault, control system 6 controls change of current branch road 4
Conducting, then control hybrid switch 5 and disconnect, electric current flows through damping branch road 1, high voltage SiC switch mosfet 2 and change of current branch road successively
4, after electric current has shifted completely, turn off hybrid switch 5 and bear the DC voltage of SiC DC solid circuit breaker conduction voltage drop,
Then control system 6 controls high voltage SiC switch mosfet 2 and turns off, and short circuit energy is absorbed by energy absorber system 3, by damping
Branch road 1 prevents the oscillation in high voltage SiC switch mosfet 2 turn off process, when high voltage SiC switch mosfet 2 closes completely
Having no progeny, short trouble is cut, and high voltage SiC switch mosfet 2 bears DC bus-bar voltage.
The present invention is using SiC DC solid circuit breaker as the main body of chopper, the first power terminal A and the second power terminal
B is connected in the major loop of transmission line of electricity cut off short circuit current, and hybrid switch 5 is in parallel with SiC DC solid circuit breaker, reduces disconnected
The conduction loss of road device.
In order to improve the electric pressure of chopper, some first metal-oxide-semiconductor cascade composition high voltage SiC switch mosfets 2, the
The number n of one metal-oxide-semiconductor cascade is determined by running voltage；When running voltage is V1, each first metal-oxide-semiconductor pressure for V2, first
The number n of metal-oxide-semiconductor should meet
Change of current branch road 4 is made up of the 3rd metal-oxide-semiconductor, is off state when hybrid switch 5 is in the conduction state, does not has electricity
Stream flows through SiC DC solid circuit breaker；When short trouble occurs, change of current branch road 4 first turns on, ready for electric current transfer.
Damping branch road 1 is made up of damping resistance, and its effect is to prevent from occurring in chopper turn off process resonance, impact
The trouble free service that each first metal-oxide-semiconductor drives, the resistance of damping resistance and the current-limiting reactor of circuit, the output capacitance of the first metal-oxide-semiconductor,
Added drive electric capacity, energy absorber system 3 parasitic capacitance relevant.
As it is shown on figure 3, hybrid switch 5 is for be made up of mechanical switch K and the 3rd metal-oxide-semiconductor, mechanical switch K bears at chopper
Fracture voltage in off state.3rd metal-oxide-semiconductor act as when SiC MOSFET is on, control system 6 controls it
Disconnect, so that short circuit current flows completely through SiC DC solid switch.
Claims (7)
1. a solid-state direct-current chopper based on SiC MOSFET, it is characterised in that include SiC DC solid circuit breaker,
One power terminal (A), the second power terminal (B), hybrid switch (5) and control system (6), SiC DC solid circuit breaker includes
Damping branch road (1), change of current branch road (4) and high voltage SiC switch mosfet (2), the first power terminal (A) is successively through damping branch road
(1), high voltage SiC switch mosfet (2) and change of current branch road (4) be connected with the second power terminal (B), the two of hybrid switch (5)
End is connected with the first power terminal (A) and the second power terminal (B) respectively, the outfan of control system (6) and change of current branch road
(4) control end and the control end of hybrid switch (5) are connected；
Described high voltage SiC switch mosfet (2) includes gate driver, n resistance, n electric capacity and n the first metal-oxide-semiconductor；
The control end of gate driver is connected with control system (6), the negative pole of gate driver outfan and first electric capacity,
Change of current branch road (4), the source electrode of first the first metal-oxide-semiconductor and first resistance are connected, and each resistance is sequentially connected in series, each electric capacity
Being sequentially connected in series, damping branch road (1) is connected with the drain electrode of the n-th electric capacity, the n-th resistance and the n-th the first metal-oxide-semiconductors, front
The drain electrode of one the first metal-oxide-semiconductor is connected with the source electrode of later the first metal-oxide-semiconductor, between i-th electric capacity and the i-th-1 electric capacity
Circuit is connected with the grid of i-th the first metal-oxide-semiconductor, and the grid of first the first metal-oxide-semiconductor is with gate driver outfan just
Pole is connected, and wherein, 2≤i≤n, n are the positive integer more than or equal to 2.
Solid-state direct-current chopper based on SiC MOSFET the most according to claim 1, it is characterised in that SiC direct current is solid
State chopper also includes energy absorber system (3), wherein, the two ends of energy absorber system (3) respectively with high voltage SiC MOSFET
The two ends of switch (2) are connected.
Solid-state direct-current chopper based on SiC MOSFET the most according to claim 1, it is characterised in that hybrid switch
(5) including mechanical switch (K) and the second metal-oxide-semiconductor (M), wherein, one end of mechanical switch (K) is connected with the first power terminal (A)
Connecing, the other end of mechanical switch (K) and the drain electrode of the second metal-oxide-semiconductor (M) are connected, the source electrode of the second metal-oxide-semiconductor (M) and the second power
Terminal (B) is connected, and the grid of the second metal-oxide-semiconductor (M) is connected with the outfan of control system (6).
Solid-state direct-current chopper based on SiC MOSFET the most according to claim 1, it is characterised in that energy absorption system
System (3) is spark gap.
Solid-state direct-current chopper based on SiC MOSFET the most according to claim 1, it is characterised in that damping branch road
(1) it is damping resistance.
Solid-state direct-current chopper based on SiC MOSFET the most according to claim 3, it is characterised in that change of current branch road
(4) being the 3rd metal-oxide-semiconductor, wherein, the drain electrode of the 3rd metal-oxide-semiconductor is connected with high voltage SiC switch mosfet (2), the 3rd metal-oxide-semiconductor
Source electrode and the second power terminal B are connected, and the grid of the 3rd metal-oxide-semiconductor is connected with control system (6).
7. a control method for solid-state direct-current chopper based on SiC MOSFET as claimed in claim 2, its feature exists
In, the first power terminal (A) is connected with circuit or equipment with the second power terminal (B), comprises the following steps:
When circuit or equipment are in normal operating conditions, control system (6) controls change of current branch road (4) and disconnects, and controls mixing
Switch (5) conducting, electric current flows through hybrid switch (5)；When circuit or equipment are short-circuited fault, control system (6) controls to change
Stream branch road (4) conducting, then control hybrid switch (5) disconnection, electric current flows through damping branch road (1) successively, high voltage SiC MOSFET opens
Close (2) and change of current branch road (4), after electric current has shifted completely, turn off hybrid switch (5) and bear SiC DC solid circuit breaker
The DC voltage of conduction voltage drop, then control system (6) controls high voltage SiC switch mosfet (2) shutoff, and short circuit energy is by energy
Amount absorption system (3) absorbs, and prevents the voltage in high voltage SiC switch mosfet (2) turn off process from shaking by damping branch road (1)
Swinging, after high voltage SiC switch mosfet (2) complete switches off, short trouble is cut, and high voltage SiC switch mosfet (2) bears
DC bus-bar voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610551804.XA CN106159882B (en) | 2016-07-13 | 2016-07-13 | A kind of solid-state direct-current breaker and its control method based on SiC MOSFET |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610551804.XA CN106159882B (en) | 2016-07-13 | 2016-07-13 | A kind of solid-state direct-current breaker and its control method based on SiC MOSFET |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106159882A true CN106159882A (en) | 2016-11-23 |
| CN106159882B CN106159882B (en) | 2018-10-30 |
Family
ID=58062049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610551804.XA Active CN106159882B (en) | 2016-07-13 | 2016-07-13 | A kind of solid-state direct-current breaker and its control method based on SiC MOSFET |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106159882B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107171292A (en) * | 2017-07-12 | 2017-09-15 | 重庆大学 | A kind of device for suppressing shut-off overvoltage based on SiC MOSFET DC solid circuit breakers |
| CN109066609A (en) * | 2018-07-26 | 2018-12-21 | 西安交通大学 | A kind of all solid state dc circuit breaker topological structure based on cascade SiC MOSFET |
| CN110429562A (en) * | 2019-08-22 | 2019-11-08 | 西南交通大学 | Hybrid high voltage DC breaker and its control method based on normal open type SIC device |
| CN110518544A (en) * | 2019-08-22 | 2019-11-29 | 西南交通大学 | A kind of solid-state direct-current breaker based on normal open type SIC devices in series structure |
| CN113889967A (en) * | 2021-09-27 | 2022-01-04 | 任宇 | Topological structure of modular cascade direct current circuit breaker and control method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140062570A1 (en) * | 2012-08-31 | 2014-03-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Overdrive Circuits and Related Method |
| CN103646805A (en) * | 2013-12-04 | 2014-03-19 | 中国科学院电工研究所 | Direct-current breaker topology |
| CN103997322A (en) * | 2014-05-27 | 2014-08-20 | 西安交通大学 | Full-solidity direct-current breaker and control method thereof |
-
2016
- 2016-07-13 CN CN201610551804.XA patent/CN106159882B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140062570A1 (en) * | 2012-08-31 | 2014-03-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Overdrive Circuits and Related Method |
| CN103646805A (en) * | 2013-12-04 | 2014-03-19 | 中国科学院电工研究所 | Direct-current breaker topology |
| CN103997322A (en) * | 2014-05-27 | 2014-08-20 | 西安交通大学 | Full-solidity direct-current breaker and control method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 张帆等: "一种适用于固态直流断路器的IGBT串联均压电路", 《中国电机工程学报》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107171292A (en) * | 2017-07-12 | 2017-09-15 | 重庆大学 | A kind of device for suppressing shut-off overvoltage based on SiC MOSFET DC solid circuit breakers |
| CN107171292B (en) * | 2017-07-12 | 2019-06-07 | 重庆大学 | A kind of device inhibiting shutdown overvoltage based on SiC MOSFET DC solid circuit breaker |
| CN109066609A (en) * | 2018-07-26 | 2018-12-21 | 西安交通大学 | A kind of all solid state dc circuit breaker topological structure based on cascade SiC MOSFET |
| CN109066609B (en) * | 2018-07-26 | 2020-03-17 | 西安交通大学 | All-solid-state direct current breaker topological structure based on cascade SiC MOSFET |
| CN110429562A (en) * | 2019-08-22 | 2019-11-08 | 西南交通大学 | Hybrid high voltage DC breaker and its control method based on normal open type SIC device |
| CN110518544A (en) * | 2019-08-22 | 2019-11-29 | 西南交通大学 | A kind of solid-state direct-current breaker based on normal open type SIC devices in series structure |
| CN113889967A (en) * | 2021-09-27 | 2022-01-04 | 任宇 | Topological structure of modular cascade direct current circuit breaker and control method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106159882B (en) | 2018-10-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106159882B (en) | A kind of solid-state direct-current breaker and its control method based on SiC MOSFET | |
| CN107210598B (en) | The DC breaker generated with reverse current | |
| CN103219699B (en) | High-voltage mixing type direct-current breaker | |
| Zhang et al. | Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter | |
| CN103219698B (en) | Mixing type direct-current breaker | |
| CN106300291A (en) | Hybrid high voltage DC breaker based on IGBT | |
| CN103346763B (en) | A kind of igbt Drive Protecting Circuit | |
| CN104638959B (en) | The neutral point clamper converter used in power module and the power module comprising it | |
| CN106207991A (en) | A kind of bidirectional high-pressure DC hybrid chopper | |
| CN106786349A (en) | A kind of assist exchanging circuit module and high voltage DC breaker | |
| CN107453335A (en) | A kind of dc circuit breaker and its control method | |
| CN107222107A (en) | A kind of quick, high pressure resistant solid-state switch | |
| CN106711930A (en) | DC circuit breaker and control method thereof | |
| CN101350613A (en) | Electronic switch | |
| CN104882877B (en) | A kind of high voltage DC breaker | |
| CN101783666B (en) | Reinforced-depletion-mode part combination switch circuit capable of being reliably turned off | |
| CN106655746B (en) | A kind of buffer circuit suitable for the two-way shunt load commutation switch of hybrid high voltage DC breaker | |
| CN106300237A (en) | A kind of magnetic field impulse transfer type is without arc dc circuit breaker | |
| CN106712749A (en) | Silicon carbide MOSFET and JEFT based hybrid high-voltage device | |
| TWI717661B (en) | Power electronic modules for charging stations and corresponding charging stations and charging stations | |
| CN110429562A (en) | Hybrid high voltage DC breaker and its control method based on normal open type SIC device | |
| CN206559057U (en) | Grid-connected on-off circuit | |
| Liu et al. | Review of SiC MOSFET drive circuit | |
| WO2018032658A1 (en) | Novel hybrid direct current circuit breaker and power unit | |
| CN209001913U (en) | A kind of SiC metal-oxide-semiconductor negative pressure breaking circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |