CN107154342A - 基板处理装置和基板处理方法 - Google Patents

基板处理装置和基板处理方法 Download PDF

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CN107154342A
CN107154342A CN201710123005.7A CN201710123005A CN107154342A CN 107154342 A CN107154342 A CN 107154342A CN 201710123005 A CN201710123005 A CN 201710123005A CN 107154342 A CN107154342 A CN 107154342A
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processing chamber
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wafer
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CN107154342B (zh
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稻富弘朗
冈村聪
枇杷聪
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Tokyo Electron Ltd
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Abstract

本发明提供一种基板处理装置和基板处理方法。防止向基板处理容器内输入的晶圆上的液体干燥。基板处理装置(3)包括基板处理容器主体(31A)以及保持构件(42)，所述保持构件(42)从该基板处理容器主体(31A)外方将晶圆(W)向基板处理容器主体(31A)内输送，并在处理过程中保持晶圆(W)。在基板处理容器主体(41)的外方设置有支承晶圆(W)的基板支承销(49)和对保持构件(42)进行冷却的冷却板(45)。

Description

基板处理装置和基板处理方法
技术领域
本发明涉及将附着到基板的表面的液体去除的基板处理装置和基板处理方法。
背景技术
在将集成电路的层叠构造形成于作为基板的半导体晶圆(以下称为晶圆)等的表面的半导体装置的制造工序中，设置有利用化学溶液等清洗液将晶圆表面的微小的尘土、自然氧化膜去除等利用液体来对晶圆表面进行处理的液处理工序。
在这样的液处理工序中，在将附着到晶圆的表面的液体等去除之际，公知有使用超临界状态、亚临界状态的流体(在背景技术的说明中，将它们统称为超临界流体)的超临界处理方法。
不过，在使用超临界流体来对晶圆实施超临界处理的情况下，首先，在前工序中向晶圆注满(日文：液盛り)包括例如IPA的干燥防止用的液体，将注满有干燥防止用的液体的晶圆载置于位于基板处理容器主体的外方的保持构件上，将保持构件上的晶圆向基板处理容器主体内输入。接下来在基板处理容器内中使用超临界流体来对晶圆实施了超临界处理。
在结束超临界处理后，使保持构件向外方移动而将保持构件上的晶圆向外方排出。
接下来将新的注满有干燥防止用的液体的晶圆载置于保持构件上而反复进行上述的作用。
如上述那样在载置于保持构件上的晶圆注满有干燥防止用的液体，但于在基板处理容器内对晶圆实施超临界处理的情况下，保持构件也被加热成高温。于在加热了的保持构件的温度较高的状态下载置了新的注满液体的晶圆的情况下，可知：注满于晶圆的干燥防止用的液体由于来自保持构件的热量就干燥，无法对晶圆实施恰当的超临界(加热)处理。
现有技术文献
专利文献
专利文献1：日本特开2013-12538号公报
发明内容
发明要解决的问题
本发明是考虑这样的点而做成的，目的在于提供一种能够对注满液体的基板实施恰当的加热处理的基板处理装置、基板处理方法。
用于解决问题的方案
本发明的基板处理装置，其特征在于，该基板处理装置具备：基板处理容器主体，其用于对基板实施处理；保持构件，其用于从所述基板处理容器主体的外方向所述基板处理容器主体输送所述基板，并用于在处理过程中在所述基板处理容器主体内保持所述基板；冷却构件和基板支承销，其位于所述基板处理容器主体的外方，并且，该冷却构件用于对所述保持构件进行冷却，该基板支承销用于对所述基板进行支承；升降机构，其用于使所述冷却构件和所述基板支承销相对于所述保持构件沿着上下方向升降。
本发明的基板处理方法，其特征在于，该基板处理方法具备如下工序：准备基板处理装置的工序，该基板处理装置具备：基板处理容器主体，其用于对基板实施处理；保持构件，其用于从所述基板处理容器主体的外方向所述基板处理容器主体输送所述基板，并用于在处理过程中在所述基板处理容器主体内保持所述基板；冷却构件和基板支承销，其位于所述基板处理容器主体的外方，并且，该冷却构件用于对所述保持构件进行冷却，该基板支承销用于支承所述基板；升降机构，其用于使所述冷却构件和所述基板支承销相对于所述保持构件沿着上下方向升降；利用所述保持构件从所述基板处理容器主体的外方向所述基板处理容器主体输送所述基板的工序；在所述基板处理容器内一边利用所述保持构件保持所述基板一边实施处理的工序；一边将所述保持构件上的所述基板向外方排出、并且使所述升降机构工作而利用所述基板支承销将所述基板向上方抬起，一边使所述冷却构件接近所述保持构件而对所述保持构件进行冷却的工序；将新的基板向所述保持构件上载置的工序。
发明的效果
根据本发明，能够对注满液体的基板实施恰当的加热处理。
附图说明
图1是清洗处理***的横剖俯视图。
图2是设置于清洗处理***的清洗装置的纵剖侧视图。
图3是本超临界处理装置的构成图。
图4是本实施方式的基板处理容器的外观立体图。
图5A是表示本发明的实施方式的作用的图。
图5B是表示本发明的实施方式的作用的图。
图5C是表示本发明的实施方式的作用的图。
图5D是表示本发明的实施方式的作用的图。
图6是表示冷却构件的外观立体图。
图7是表示冷却构件和升降机构的侧视图。
图8是表示冷却构件和冷却构件支承销的连结关系的图7的A部放大图。
图9是表示冷却构件的俯视图。
图10是表示冷却构件的分解立体图。
图11是表示冷却构件和升降机构的变形例的侧视图。
附图标记说明
W、晶圆；1、清洗***；2、清洗装置；3、超临界处理装置；4、控制部；4b、存储介质；31、基板处理容器；31A、基板处理容器主体；34、排出管线；34a、减压阀；35、流体供给管线；35a、开闭阀；35c、流量调整阀；37、流体供给源；40、盖装置；41、盖构件；42、保持构件；45、冷却板；45A、冷却板主体；46、升降机构；48、冷却构件支承销；49、基板支承销；50、弹簧；51、冷却管；52、一端；53、另一端；60、升降机构；61、第1升降机构；62、第2升降机构。
具体实施方式
以下，对本实施方式的基板处理容器、和装入有该基板处理容器的超临界处理装置3(基板处理装置)和清洗处理***1整体的结构进行说明。
首先，作为装入有本实施方式的基板处理装置的基板处理***的一个例子，对清洗处理***1进行说明，该清洗处理***1具备：清洗装置2，其向作为被处理基板的晶圆W供给清洗液而进行清洗处理；超临界处理装置3，其使附着于清洗处理后的晶圆W的干燥防止用的液体(IPA)与超临界CO2接触而去除。
图1是表示清洗处理***1的整体结构的横剖俯视图，朝向该图而将下侧设为前方。在清洗处理***1中，FOUP100载置于载置部11，收纳到该FOUP100的例如直径为300mm的多张晶圆W经由输入输出部12和交接部13在该FOUP100与后段的清洗处理部14、超临界处理部15之间进行交接，依次被输入清洗装置2、超临界处理装置3内而进行清洗处理、将干燥防止用的液体去除的处理。在图1中，附图标记121是在FOUP100与交接部13之间输送晶圆W的第1输送机构，附图标记131是起到作为供在输入输出部12与清洗处理部14、超临界处理部15之间进行输送的晶圆W临时载置的缓冲器的作用的交接搁板。
清洗处理部14和超临界处理部15沿着从与交接部13之间的开口部朝向前后方向延伸的晶圆输送路径162从前方起依次设置。在清洗处理部14中，隔着该晶圆输送路径162各配置有1台清洗装置2。另一方面，在超临界处理部15中，隔着晶圆输送路径162各配置有3台、合计6台作为本实施方式的基板处理装置的超临界处理装置3。
利用配置于晶圆输送路径162的第2输送机构161在这些各清洗装置2、超临界处理装置3和交接部13之间输送晶圆W。在此，配置于清洗处理部14、超临界处理部15的清洗装置2、超临界处理装置3的个数可根据每单位时间的晶圆W的处理张数、清洗装置2、超临界处理装置3中的处理时间的不同等适当地选择，可根据这些清洗装置2、超临界处理装置3的配置数量等选择最佳的布局。
清洗装置2构成为利用例如旋转清洗对晶圆W进行逐张清洗的单张式的清洗装置2，如图2的纵剖侧视图所示，在配置于形成处理空间的外腔室21内的晶圆保持机构23大致水平地保持晶圆W，通过使该晶圆保持机构23绕铅垂轴线旋转，使晶圆W旋转。然后，使喷嘴臂24进入旋转的晶圆W的上方，从设置于喷嘴臂24的顶端部的化学溶液喷嘴241将化学溶液以及冲洗液按照预先确定好的顺序供给，从而进行晶圆的面的清洗处理。另外，在晶圆保持机构23的内部也形成有化学溶液供给路径231，利用从该化学溶液供给路径231供给的化学溶液以及冲洗液进行晶圆W的背面清洗。
清洗处理可如下这样进行：例如由作为碱性的化学溶液的SC1液(氨和过氧化氢水的混合液)进行的微粒、有机性的污染物质的去除→由作为冲洗液的脱离子水(纯水)(DeIonized Water：DIW)进行的冲洗清洗→由作为酸性化学溶液的稀氢氟酸水溶液(以下、DHF(Diluted HydroFluoric acid))进行的自然氧化膜的去除→由DIW进行的冲洗清洗。这些化学溶液由被配置于外腔室21内的内杯22、外腔室21接住而从排液口221、211排出。另外，外腔室21内的气氛气体被从排气口212排出。
由化学溶液进行的清洗处理一结束，就在使晶圆保持机构23的旋转停止后向晶圆W的表面和背面供给IPA(异丙醇，IsoPropyl Alcohol)，与残存于这些面的DIW置换。这样结束了清洗处理的晶圆W保持其表面注满IPA的状态(在晶圆W表面形成有IPA的液膜的状态)并利用设置于晶圆保持机构23的未图示的交接机构向第2输送机构161交接，从清洗装置2输出。
在清洗装置2注满于晶圆W表面的IPA起到作为在晶圆W从清洗装置2向超临界处理装置3的输送过程中、向超临界处理装置3的输入动作过程中防止由于该IPA蒸发(气化)而产生图案倒塌的干燥防止用的液体的作用。
清洗装置2中的清洗处理结束，在表面注满干燥防止用的IPA的晶圆W向超临界处理装置3输送，在基板处理容器31内使超临界CO2与晶圆W表面的IPA接触，从而使该IPA溶解于超临界CO2而去除，使晶圆W干燥。以下、一边参照图3、图4，一边说明本实施方式的超临界处理装置(基板处理装置)3的结构。
本实施方式的超临界处理装置3具备：可进行将附着到晶圆W表面的作为干燥防止用的液体的IPA去除的处理的本实施方式的基板处理容器31；向该基板处理容器31供给作为高压流体的超临界CO2的流体供给源37。
如图4所示，基板处理容器31具备在侧面形成有供晶圆W的输入输出用的开口部31a的壳体状的基板处理容器主体31A和将开口部31a密闭的盖装置40。其中，盖装置40具有在将晶圆W向基板处理容器主体31A内输入时将所述开口部31a密闭的盖构件41和与该盖构件41连结并横向地保持处理对象的晶圆W的保持板(保持构件)42。
基板处理容器主体31A是形成有可收容例如直径为300mm的晶圆W的处理空间的容器，在其壁部连接有用于向基板处理容器31内供给高压流体的流体供给管线35(流体供给路径)和用于将基板处理容器31内的流体排出的排出管线34(排出路径)。另外，在基板处理容器31设置有用于克服从供给到处理空间内的高压状态的高压流体受到的内压而朝向基板处理容器主体31A按压盖构件41、使处理空间密闭的未图示的按压机构。
与基板处理容器31连接的流体供给管线35经由与高压流体的向基板处理容器31的供给、停止相应地开闭的开闭阀35a、过滤器35b以及流量调整阀35c而与流体供给源37连接。流体供给源37具备贮存例如液体CO2的CO2储气瓶和用于使从该CO2储气瓶供给的液体CO2升压而成为超临界状态的、由注射泵、隔膜泵等构成的升压泵。在图4等中，将这些CO2储气瓶、升压泵统一以储气瓶的形状示出。
从流体供给源37供给来的超临界CO2利用流量调整阀35c对流量进行调节，向基板处理容器31供给。该流量调整阀35c由例如针阀等构成，也兼用作将来自流体供给源37的超临界CO2的供给阻断的阻断部。
另外，排出管线34的减压阀34a与压力控制器34b连接，该压力控制器34b具备基于从设置于基板处理容器31的压力计38取得的基板处理容器31内的压力的测定结果与预先设定好的设定压力之间的比较结果来对开度进行调整的反馈控制功能。
具备以上说明了的结构的清洗处理***1、清洗装置2、超临界处理装置3如图1、图3所示那样与控制部4连接。控制部4包括具备CPU和存储部的计算机4a，在存储部记录有程序，该程序编入有针对关于这些清洗处理***1、清洗装置2、超临界处理装置3的作用、即关于从FOUP100取出晶圆W而利用清洗装置2进行清洗处理、接下来利用超临界处理装置3进行使晶圆W干燥的处理到将晶圆W向FOUP100内输入为止的动作的控制的步骤(命令)组。该程序储存于例如硬盘、光盘、磁光盘、存储卡等存储介质4b，从存储介质4b安装于计算机。
接下来，参照图4～图10进一步说明本实施方式的超临界处理装置3的基板处理容器31的结构。
如图4～图10所示，基板处理容器31具备：具有开口部31a的基板处理容器主体31A和盖装置40，该盖装置40具有对开口部31a进行密闭的盖构件41和与该盖构件41连结并将晶圆W沿着水平方向保持的板状的保持板42。
另外，在基板处理容器主体31A的外方设置有金属制的冷却板(冷却构件)45，该金属制的冷却板(冷却构件)45相对于保持板42沿着上下方向升降而与保持板42的下表面直接接触，对该保持板42进行冷却。
该冷却板45能够利用升降机构46进行上升而与保持板42的下表面直接接触。
接下来，对升降机构46进行说明。如图7所示，升降机构46具有基座46b、设置于基座46b上并沿着铅垂方向延伸的铅垂引导件46d、以及沿着铅垂引导件46d升降的升降台46a。
另外，在升降台46a安装有驱动马达46c，来自该驱动马达46c的驱动力向升降台46a与铅垂引导件46d之间的驱动部46e传递，而使升降台46a沿着铅垂引导件46d升降。
在包括这样的结构的升降机构46的升降台46a设置有沿着铅垂方向延伸的冷却构件支承销48，由该冷却构件支承销48支承冷却板45。在该情况下，弹簧50介于冷却板45与冷却构件支承销48之间，在升降台46a上升而冷却板45与保持板42的下表面直接抵接之际，能够缓和冷却板45与保持板42之间的冲击。另外，即使例如保持板42稍微倾斜，冷却板45隔着弹簧50，因此，也能够仿效保持板42的倾斜而抵接，能够均匀地冷却保持板42。(参照图8)。
具体而言，弹簧50安装于冷却构件支承销48的上部，覆盖该弹簧50地设置有弹簧罩50a。并且，设置于弹簧罩50a的突起50b嵌入冷却板45的开口45a内，冷却构件支承销48和冷却板45借助弹簧50连结起来。
不过，如图6～图8所示，在升降机构46的升降台46a，除了设置有冷却构件支承销48之外，还设置有支承晶圆W而使晶圆W升降的基板支承销49。基板支承销49用于支承晶圆W而使晶圆W升降，基板支承销49贯通被设置于冷却板45的开口45a而沿着上下方向延伸。
不过，如图10所示，冷却板45具有冷却板主体45A和形成于该冷却板主体45A内的冷却管51，该冷却管51的一端52和另一端53分别与冷却水供给管线52a和冷却水排出管线53a连接。并且，在包括这样的结构的冷却板45中，冷却板45始终被在冷却板主体45A的冷却管51内流动的冷却介质冷却。
接下来，对包括这样的结构的本实施方式的作用进行说明。
如已述那样清洗装置2的清洗处理结束，若注满有干燥防止用的IPA的晶圆W向第2输送机构161交接，则第2输送机构161进入被配置有可放入晶圆W的超临界处理装置3的壳体内。
对于此时进行晶圆W的输入之前的超临界处理装置3，使基板处理容器31的未图示的加热器连通(ON)，基板处理容器31内被加热，在使基板处理容器31内大气开放后在将流体供给管线35的开闭阀35a、排出管线34的减压阀34a关闭的状态下待机。另外，对于流体供给管线35，也预先进行大气开放操作，在高压的CO2没有残存于内部的状态下将开闭阀35a和流量调整阀35c关闭。
注满有IPA的晶圆W输入到在上述的状态下待机着的基板处理容器31。此时，如图4所示那样预先使盖装置40的保持板42向基板处理容器主体31A的外方移动。并且，利用升降机构46使基板支承销49上升，使基板支承销49贯通保持板42的未图示的开口而向上方突出。接下来，利用该基板支承销49从第2输送机构161的输送臂接受晶圆W。接下来，利用升降机构46使基板支承销49下降，将晶圆W载置于保持板42(参照图5A)。之后，进一步使盖装置40的保持板42移动而将晶圆W经由开口部31a向基板处理容器主体31A的内部输入，利用盖构件41将开口部31a关闭而使基板处理容器31内密闭(参照图5B)。
接下来，如图3和图5B所示，打开流体供给管线35的开闭阀35a，并且对流量调整阀35c的开度进行调节，而以预先确定好的流量将超临界CO2导入到基板处理容器31内(参照图5C)。
不过，在压力控制器34b设定有基板处理容器31内的目标压力，基板处理容器31内的压力一超过所述目标压力，就打开减压阀34a而将基板处理容器31内的超临界CO2的一部分从排出管线34排出，从而进行基板处理容器31内的压力调整。此时，在晶圆W的表面上，在晶圆W上注满的IPA与超临界CO2接触，被超临界CO2抽出，而IPA被从晶圆W的表面去除。
不久，超临界CO2进入被形成于晶圆W的表面的图案内，将该图案内的IPA抽出而去除。其结果，充满到图案内的IPA被置换成超临界CO2，被从晶圆W的表面去除。
此时，将在基板处理容器31内抽出了IPA的超临界CO2的一部分从排出管线34排出，继续供给来自流体供给管线35的新的超临界CO2。由此，不使基板处理容器31内的超临界CO2对IPA的抽出能力大幅度降低，就能够进行去除IPA的处理。
这样一来，将进入到图案内的IPA抽出、利用超临界CO2进行置换一经过充分的时间，就解除压力控制器34b的压力控制而将排出管线34的减压阀34a关闭，并且，将流量调整阀35c封闭而将来自流体供给源37的超临界CO2的供给阻断。此时，成为基板处理容器31和流体供给管线35的配管内部充满超临界CO2的状态。
超临界CO2的供给一停止，就打开减压阀34a而将基板处理容器31和流体供给管线35的配管的内部的超临界CO2排出，从而一并将基板处理容器31和流体供给管线35减压到大气压。在该操作中，残存于基板处理容器31、流体供给管线35内的超临界CO2随着压力的降低而“超临界CO2→高压CO2气体→低压CO2气体”这样变化，水分、油分的保持能力降低下来。
这样一来，在减压到大气压的基板处理容器31的内部，从图案内去除液体IPA，能够获得成为干燥了的状态的晶圆W。
一使基板处理容器31内大气开放而获得干燥了的状态的晶圆W，就如图5D所示，使盖装置40的保持板42移动而利用第2输送机构161从基板处理容器31的基板处理容器主体31A输出晶圆W。
在该情况下，盖装置40的保持板42到达被设置于基板处理容器主体31A的外方的升降机构46的正上方。接下来，利用驱动马达46c使升降机构46的升降台46a上升。此时，随着升降台46a的上升，冷却构件支承销48和基板支承销49同时上升。
在该情况下，如图7和图8所示，冷却构件支承销48隔着弹簧50支承冷却板45，另一方面，基板支承销49贯通冷却板45的开口45a而向上方延伸。
若升降台46a进一步上升，则基板支承销49贯通保持板42的未图示的开口而向保持板42上方突出，基板支承销49抬起晶圆W。接下来，由冷却构件支承销48支承着的冷却板45与保持板42的下表面直接接触而对该保持板42的下表面进行冷却。
于在基板处理容器31内对晶圆W实施超临界处理之际，盖装置40的保持板42在基板处理容器31内被加热而成为高温。于在该状态下如随后论述那样将新的晶圆W载置到保持板42上的情况下，也认为：由于来自保持板42的热量，在晶圆W上注满的干燥防止用的IPA就干燥。
与此相对，根据本实施方式，使冷却板45与保持板42的下表面直接接触而对保持板42进行冷却，因此，能够防止晶圆W上的IPA因保持板42的热量而干燥于未然。
接下来，由基板支承销49抬起的晶圆W向第2输送机构161的输送臂交接。
接下来，如上所述，注满IPA的新的晶圆W输入到超临界处理装置3，被交接于贯通保持板42的开口而向上方抬起的基板支承销49。
之后，升降机构46的升降台46a下降，基板支承销49上的晶圆W载置于保持板42上，由冷却构件支承销48支承的冷却板45与保持板42分开。
之后，使盖装置40的保持板42移动而将保持板42上的晶圆W向基板处理容器主体31A内输入，对上述的晶圆W反复进行超临界处理。
然后，晶圆W经由缓冲器131向第1输送机构121交接，经由与输入时相反的路径收纳于FOUP100内，对晶圆W的一系列的动作完成。
如以上的那样，根据本实施方式，在基板处理容器31内能够使冷却板45与由于对晶圆W实施超临界处理而被加热成高温的保持板42直接接触而对该保持板42进行冷却。因此，在将注满IPA的新的晶圆W载置到保持板42的情况下，注满于新的晶圆W上的IPA就不会由于保持板42的热量而干燥，能够对晶圆W实施恰当的超临界处理。另外，冷却板45隔着弹簧50被冷却构件支承销48支承，因此，即使是在使升降机构46的升降台46a上升而使冷却板45与保持板42的下表面抵接了的情况下，也不会从冷却板45对保持板42施加较大的冲击。另外，即使例如保持板42稍微倾斜，冷却板45隔着弹簧50，因此，也能够仿效保持板42的倾斜而抵接，能够均匀地冷却保持板42。
而且，还能够使用单一的升降机构46并利用冷却构件支承销48使冷却板45与保持板42的下表面接触，且利用基板支承销49将晶圆W抬起。
此外，在上述实施方式中，示出了使用金属制的冷却板45作为冷却板45的例子，但并不限于此，也可以是，在冷却板45的上部设置弹性材料来使冷却板45与保持板42之间的冲击缓和。
而且，还示出了使用板状的保持板42作为保持构件的例子，也可以使用仅保持晶圆W的周缘的环状的保持构件。
在上述实施方式中，使保持板42和冷却板45直接接触来进行冷却，但并不限于此，也可以是，使保持板42和冷却板45接近成形成有保持板42与冷却板45不接触的程度的微小的间隙。在不将冷却板45加热成高温的情况下，不直接接触也能够进行冷却。
另外，在上述实施方式中，在升降机构46上一体地设置有冷却板45和基板支承销49，冷却板45和基板支承销49一起进行升降动作，但并不限于此，也可以是，升降机构60具有使冷却板45沿着上下方向升降的第1升降机构61和使基板支承销49沿着上下方向升降的第2升降机构62，第1升降机构61和第2升降机构62彼此独立地进行升降动作。例如，如图11所示，使盖装置40的保持板42移动而从基板处理容器31的基板处理容器主体31A输出晶圆W。在该情况下，盖装置40的保持板42到达被设置于基板处理容器主体31A的外方的升降机构60的正上方。接下来，利用驱动马达61c使第1升降机构61的升降台61a上升，使冷却板45与保持板42接近或直接接触。接下来，利用驱动马达62c使第2升降机构62的升降台62a上升，基板支承销49上升。由此，直到利用第2输送机构161的输送臂接受晶圆W之前，与保持板42一并地也能够冷却晶圆W。
在上述实施方式中，示出了使用超临界流体对晶圆W进行超临界处理的超临界装置，并不限于此，也能够适用于不使用超临界流体就对注满于晶圆W上的液体进行加热而进行处理的装置。
另外，在上述实施方式中，示出了在冷却板45与冷却构件支承销48之间设置有弹簧50的例子，但该弹簧50既可以是金属制的弹簧，也可以是气体或液体的流体弹簧。

Claims (8)

1.一种基板处理装置，其特征在于，
该基板处理装置具备：
基板处理容器主体，其用于对基板实施处理；
保持构件，其用于从所述基板处理容器主体的外方向所述基板处理容器主体输送所述基板，并用于在处理过程中在所述基板处理容器主体内保持所述基板；
冷却构件和基板支承销，其位于所述基板处理容器主体的外方，并且，该冷却构件用于对所述保持构件进行冷却，该基板支承销用于支承所述基板；
升降机构，其用于使所述冷却构件和所述基板支承销相对于所述保持构件沿着上下方向升降。
2.根据权利要求1所述的基板处理装置，其特征在于，
所述冷却构件与所述保持构件直接接触而对保持构件进行冷却。
3.根据权利要求2所述的基板处理装置，其特征在于，
所述升降机构具有隔着弹簧抬起所述冷却构件的冷却构件支承销。
4.根据权利要求3所述的基板处理装置，其特征在于，
所述升降机构具有贯通所述冷却构件而延伸并支承所述基板的所述基板支承销。
5.根据权利要求1～4中任一项所述的基板处理装置，其特征在于，
所述冷却构件在其表面具有弹性材料。
6.根据权利要求1～5中任一项所述的基板处理装置，其特征在于，
所述升降机构具有使所述冷却构件沿着上下方向升降的第1升降机构和使所述基板支承销沿着上下方向升降的第2升降机构，所述第1升降机构和所述第2升降机构彼此独立地进行升降动作。
7.根据权利要求1～6中任一项所述的基板处理装置，其特征在于，
基板处理容器是超临界处理用的基板处理容器。
8.一种基板处理方法，其特征在于，
该基板处理方法具备如下工序：
准备基板处理装置的工序，该基板处理装置具备：基板处理容器主体，其用于对基板实施处理；保持构件，其用于从所述基板处理容器主体的外方向所述基板处理容器主体输送所述基板，并用于在处理过程中在所述基板处理容器主体内保持所述基板；冷却构件和基板支承销，其位于所述基板处理容器主体的外方，并且，该冷却构件用于对所述保持构件进行冷却，该基板支承销用于支承所述基板；升降机构，其用于使所述冷却构件和所述基板支承销相对于所述保持构件沿着上下方向升降；
利用所述保持构件从所述基板处理容器主体的外方向所述基板处理容器主体输送所述基板的工序；
在所述基板处理容器内一边利用所述保持构件保持所述基板一边实施处理的工序；
一边将所述保持构件上的所述基板向外方排出、并且使所述升降机构工作而利用所述基板支承销将所述基板向上方抬起，一边使所述冷却构件接近所述保持构件而对所述保持构件进行冷却的工序；
将新的基板载置于所述保持构件上的工序。
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