CN107147001B - The laser module and laser of rotating semiconductor side pump optical pumping rhabdolith - Google Patents

The laser module and laser of rotating semiconductor side pump optical pumping rhabdolith Download PDF

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Publication number
CN107147001B
CN107147001B CN201710559791.5A CN201710559791A CN107147001B CN 107147001 B CN107147001 B CN 107147001B CN 201710559791 A CN201710559791 A CN 201710559791A CN 107147001 B CN107147001 B CN 107147001B
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pumping
laser
linear array
fragrant plant
class
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CN107147001A (en
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林学春
赵鹏飞
董智勇
刘燕楠
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/042—Arrangements for thermal management for solid state lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lasers (AREA)

Abstract

Present disclose provides a kind of laser modules of rotating semiconductor side pump optical pumping rhabdolith, including crystal bar；And pumping source group, including nine semiconductor laser one dimensional linear array pumping sources, each semiconductor laser one dimensional linear array pumping source include multiple fragrant plant items, have a spacing between adjacent fragrant plant item；Nine semiconductor laser one dimensional linear array pumping sources are divided into three classes pumping source, the i.e. first kind, the second class and third based semiconductor laser one dimensional linear array pumping source according to the difference of fragrant plant type of arrangement；Nine semiconductor laser one dimensional linear array pumping sources are according to the-the second class of the first kind-third class-the-the second class of the first kind-third class-the-the second class of the first kind-third class sequence uniform ring around the crystal bar to be pumped.The disclosure additionally provides a kind of laser.Disclosure laser module and laser reduce the fuel factor of all-solid state laser module laser crystal bar in high-dimensional pumping, eliminate the pumping dark space in crystal bar axial direction, improve the utilization rate of semiconductor pump source and laser crystal bar.

Description

The laser module and laser of rotating semiconductor side pump optical pumping rhabdolith
Technical field
This disclosure relates to which high power all-solid state laser technical field more particularly to a kind of rotating semiconductor side pump optical pumping stick The laser module and laser of shape crystal.
Background technique
All solid state laser have many advantages, such as high-efficient, the service life is long, good beam quality, volume are moderate, can flexible transfer, be One of laser technology more mature at present.High-power all-solid-state laser is usually by the complete of several semiconductor laser side-face pumpings Solid-state laser module realizes that therefore, laser module is to constitute high power all-solid state laser by resonance and the tandem mode of amplification The core devices of device, its performance directly determine the quality of laser complete machine.
Currently, laser module is generally pumped using the pumping source of three-dimensional, five dimensions or 7 degree of freedom around crystal bar, herein Dimension refer to that semiconductor pump source to the pumping direction of crystal bar, there is a semiconductor laser one dimensional line in each direction Battle array pumping source, can be made of the semiconductor fragrant plant item of 3~15 40W.Theoretically the diameter of crystal bar is bigger, the dimension of pumping is more, Crystal bar radially can more obtain better pumping homogeneity, and laser module can also obtain higher output power.It is real On border, the dimension of pumping source is not that the higher the better, and in 7 degree of freedom pumping, the fuel factor of crystal bar will become very serious, 40W's Semiconductor fragrant plant item generally can only operate in 30W hereinafter, pumping source cannot be fully utilized, and the output power of laser module is limited System.In addition, semiconductor laser one dimensional linear array is when packaged, there are the gaps of about 1~2mm for meeting between fragrant plant item and fragrant plant item, in crystal There are 10% or more dark spaces in the length range of stick pumping area, and periodic structure is formd on crystal bar, is not only reduced Fragrant plant item also increases the pumping inhomogeneities of crystal bar in the axial direction simultaneously in axial quantity, by the output work of laser module Rate is limited in kilowatt or less.
Summary of the invention
(1) technical problems to be solved
In view of above-mentioned technical problem, present disclose provides a kind of modes of laser of rotating semiconductor side pump optical pumping rhabdolith Block and laser, efficiently solve semiconductor laser side pump all-solid state laser module in high-dimensional pumping laser crystal bar heat The serious technical problem of effect eliminates the pumping dark space in crystal bar axial direction, improves the pumping homogeneity in crystal bar axial direction, benefit Maximum output power is obtained with the limited pumping length of crystal bar.
(2) technical solution
According to one aspect of the disclosure, a kind of mode of laser of rotating semiconductor side pump optical pumping rhabdolith is provided Block, including
Crystal bar；And
Pumping source group, including nine semiconductor laser one dimensional linear array pumping sources, each semiconductor laser one dimensional linear array pumping source include Multiple fragrant plant items have a spacing between adjacent fragrant plant item；
Wherein, which is divided into three classes pumping source according to the difference of fragrant plant type of arrangement, That is the first kind, the second class and third based semiconductor laser one dimensional linear array pumping source；When pumping rhabdolith, nine semiconductors Laser One-dimensional linear array pumping source is according to the-the second class of the first kind-third class-the-the second class of the first kind-third class-the-the second class of the first kind- The sequence uniform ring of third class is around the crystal bar to be pumped.
In some embodiments of the disclosure, along the crystal bar axis direction, the second based semiconductor laser one dimensional line The first fragrant plant item of battle array pumping source has a retraction distance compared to the first fragrant plant item of the first based semiconductor laser one dimensional linear array pumping source, The first fragrant plant item of the third based semiconductor laser one dimensional linear array pumping source is pumped compared to the second based semiconductor laser one dimensional linear array The first fragrant plant item in source has a retraction distance.
In some embodiments of the disclosure, wherein between the adjacent fragrant plant item of the first based semiconductor laser one dimensional linear array pumping source Spacing be 5mm；The first fragrant plant item of second based semiconductor laser one dimensional linear array pumping source is than the first based semiconductor laser one dimensional linear array The first fragrant plant item of pumping source is retracted 5mm, and the spacing of adjacent fragrant plant item is 5mm；The head of third based semiconductor laser one dimensional linear array pumping source A fragrant plant item is retracted 5mm than the first fragrant plant item of the second based semiconductor laser one dimensional linear array pumping source again, and the spacing of adjacent fragrant plant item is 5mm。
In some embodiments of the disclosure, the semiconductor laser one dimensional linear array pumping source includes 5~15 semiconductor lasers Fragrant plant item, each fragrant plant item are arranged in a row each along the slow-axis direction of fragrant plant item and are encapsulated on heat sink, and fragrant plant length is 10mm.
In some embodiments of the disclosure, the angle at adjacent linear array pumping source and crystal bar center is 40 °, is pumped in crystal bar Three-dimensional pumping configuration is formed in the range of the 5mm of area both ends, forms sextuple pumping configuration in remaining pumping area.
In some embodiments of the disclosure, the crystal bar is Nd:YAG laser crystal, adulterates Nd+3The atomic percent of ion Specific concentration is 0.3%~1.3%.
In some embodiments of the disclosure, the length of the crystal bar is 110mm~230mm, and diameter is 4mm~12mm.
In some embodiments of the disclosure, further includes:
Glass tube, between the pumping source group and crystal bar, for providing cooling channels to the crystal bar It is cooled down.
In some embodiments of the disclosure, the glass tube is quartz glass tube, the surface of inner wall and the crystal bar It is spaced 1~2mm, 1~2mm of wall thickness of glass tube.
According to another aspect of the disclosure, a kind of laser of rotating semiconductor side pump optical pumping rhabdolith is additionally provided Device comprising the laser module.
(3) beneficial effect
It can be seen from the above technical proposal that the disclosure rotating semiconductor side pump optical pumping rhabdolith laser module and Laser at least has the advantages that one of them:
(1) disclosure realizes sextuple optical pumping structure using the mechanical structure of nine dimension pumpings, can reduce crystal bar Fuel factor so that the work of semiconductor fragrant plant item obtains maximum utilization efficiency under rated output state, while eliminating crystal bar Pumping dark space in axial direction, improves the utilization rate of crystal.
(2) disclosure realizes sextuple optical pumping structure using the mechanical structure of nine dimension pumpings, by linear array pumping source Structure setting, sextuple optical pumping structure can rotate 40 ° by 5mm the pumping area of crystal bar is every, reduce crystal bar Thermally induced birefringence negative effect that laser is exported.
Detailed description of the invention
By the way that shown in attached drawing, above and other purpose, the feature and advantage of the disclosure will be more clear.In all the attached drawings Identical appended drawing reference indicates identical device.Attached drawing deliberately is not drawn by actual size equal proportion scaling, it is preferred that emphasis is is shown The purport of the disclosure out.
Fig. 1 is the laser module signal that rhabdolith is pumped according to three based semiconductor laser one dimensional linear array of the embodiment of the present disclosure Figure.
Fig. 2 is the arrangement schematic diagram according to fragrant plant item on nine semiconductor laser one dimensional linear array of the embodiment of the present disclosure.
Fig. 3 is according to the pump light schematic diagram within the scope of embodiment of the present disclosure crystal bar pumping area both ends 5mm.
Fig. 4 is according to the pump light signal on embodiment of the present disclosure crystal bar pumping area (range for removing both ends 5mm) section Figure.
<symbol description>
1- the first based semiconductor laser one dimensional linear array pumping source, 2- the second based semiconductor laser one dimensional linear array pumping source, 3- third The light beam that the single fragrant plant item of based semiconductor laser one dimensional linear array pumping source, 4- fragrant plant item, 5- crystal bar, 6- glass tube, 7- issues.
Specific embodiment
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference The disclosure is further described in attached drawing.
It should be noted that similar or identical part all uses identical figure number in attached drawing or specification description.It is attached The implementation for not being painted or describing in figure is form known to a person of ordinary skill in the art in technical field.In addition, though this Text can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter is equal to corresponding value without definite, but can connect It is similar to be worth accordingly in the error margin or design constraint received.The direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", "left", "right" etc. are only the directions with reference to attached drawing.Therefore, the direction term used is for illustrating not to use To limit the protection scope of the disclosure.
Present disclose provides the laser modules and laser of a kind of rotating semiconductor side pump optical pumping rhabdolith.It is described to swash Optical module includes:
Crystal bar；And
Pumping source group, including nine semiconductor laser one dimensional linear array pumping sources, each semiconductor laser one dimensional linear array pumping source difference It may include multiple fragrant plant items, should have a spacing between adjacent fragrant plant item；
Wherein, which is divided into three classes pumping source according to the difference of fragrant plant type of arrangement, That is the first kind, the second class and third based semiconductor laser one dimensional linear array pumping source；When pumping rhabdolith, nine semiconductors Laser One-dimensional linear array pumping source is according to the-the second class of the first kind-third class-the-the second class of the first kind-third class-the-the second class of the first kind- The sequence uniform ring of third class is around the crystal bar to be pumped.
The fragrant plant type of arrangement difference specifically can be, the fragrant plant item on semiconductor laser one dimensional linear array pumping source according to Lower three kinds of type of arrangement are packaged, such as along the crystal bar axis direction, the second based semiconductor laser one dimensional linear array The first fragrant plant item of pumping source has a retraction distance, institute compared to the first fragrant plant item of the first based semiconductor laser one dimensional linear array pumping source The first fragrant plant item of third based semiconductor laser one dimensional linear array pumping source is stated compared to the second based semiconductor laser one dimensional linear array pumping source First fragrant plant item have one retraction distance.
The disclosure additionally provides a kind of laser comprising the laser module.
In a preferred embodiment of the disclosure, please refer to shown in Fig. 1, laser module includes:
Crystal bar 5；
Nine semiconductor laser one dimensional linear array pumping sources 1,2,3, sequence uniform ring is pumped around laser crystal bar, middle line Battle array pumping source 1 is the first based semiconductor laser one dimensional linear array pumping source, and linear array pumping source 2 is the second based semiconductor laser one dimensional linear array pump Source, linear array pumping source 3 are third based semiconductor laser one dimensional linear array pumping source.Nine semiconductor laser one dimensional linear array pumping sources are pumping When rhabdolith, according to the first kind, the second class, third class, the first kind, the second class, third class, the first kind, the second class, third class Sequence nine semiconductor laser one dimensional linear array pumping source uniform rings are pumped around laser crystal bar.
Nine semiconductor laser one dimensional linear array pumping source uniform rings are pumped around laser crystal bar, in pumping source and crystal bar 5 Between be equipped with glass tube 6, there is cooling water to flow through cooling crystal bar between glass tube and crystal bar, pump light pass through glass tube with it is cold But water reaches crystal bar and is pumped.
The semiconductor laser one dimensional linear array pumping source 1,2,3 is in 5~15 semiconductor laser fragrant plant items of heat sink upper encapsulation, fragrant plant Item is arranged in a row along the slow-axis direction of fragrant plant item and is encapsulated on heat sink, and fragrant plant item is commercial standard (CS) fragrant plant item, length 10mm, fragrant plant item and fragrant plant Gap between item is 5mm.
The crystal bar 5 is Nd:YAG laser crystal, adulterates Nd+3The atom percentage concentration of ion be 0.3%~ 1.3%, the length is 110mm~230mm, diameter is 4mm~12mm.
The glass tube 6 be high-purity quartz glass pipe, 1~2mm of surface interval of inner wall and crystal bar, wall thickness 1~ 2mm。
In the present embodiment, it is divided into three as the fragrant plant item encapsulation arrangement on 9 semiconductor laser one dimensional linear array of pumping source Type, for including 5 fragrant plant items 4 in each linear array, fragrant plant item arrangement above is as shown in Figure 2.Specifically, the first kind Spacing between the adjacent fragrant plant item of semiconductor laser one dimensional linear array pumping source 1 is 5mm；Second based semiconductor laser one dimensional linear array pumping source 2 first fragrant plant item is retracted 5mm than the first fragrant plant item of the first based semiconductor laser one dimensional linear array pumping source 1, and the spacing of adjacent fragrant plant item is 5mm；The first fragrant plant item of third based semiconductor laser one dimensional linear array pumping source 3 compares the second based semiconductor laser one dimensional linear array pumping source 2 again First fragrant plant item be retracted 5mm, the spacing between fragrant plant item is 5mm.The output power of semiconductor laser fragrant plant item 4 is 40W's.Pumped crystal When stick, 9 packaged semiconductor laser one dimensional linear array are successively discharged according to the sequence of Fig. 2 and surround laser crystal bar (Fig. 2 The expansion tiling schematic diagram of nine semiconductor laser one dimensional linear array pumping sources in as Fig. 1), the folder of adjacent linear array and crystal bar center Angle is 40 °, as shown in Figure 1.
By the distribution of fragrant plant item in Fig. 1 it is found that will form in the range of crystal bar pumping area both ends 5mm as shown in Figure 3 Three-dimensional pumping configuration, remaining pumping area will form sextuple pumping configuration as shown in Figure 4, and the 6 DOF pumping configuration is in crystal The pumping area of stick is every to rotate 40 ° by 5mm.In terms of the pumping section of crystal bar, belong to sextuple pumping, and the rotation of pumping area The negative effect that the thermally induced birefringence of crystal bar exports laser can be reduced.Disclosure laser module and laser can reduce crystal The fuel factor of stick, so that the work of semiconductor laser fragrant plant item obtains maximum utilization efficiency under nominal power, along the axis of crystal bar To seeing, pumping source is continuous, eliminates the dark space of traditional pumping source, improves the utilization rate of crystal, can further improve all-solid state laser The output power of module.
It should be noted that in attached drawing or specification text, the implementation for not being painted or describing is affiliated technology Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously It is not limited only to various specific structures, shape or the mode mentioned in embodiment, those of ordinary skill in the art can carry out more it Change or replaces.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim System.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure Within the scope of shield.

Claims (7)

1. a kind of laser module of rotating semiconductor side pump optical pumping rhabdolith, including
Crystal bar；And
Pumping source group, including nine semiconductor laser one dimensional linear array pumping sources, each semiconductor laser one dimensional linear array pumping source includes multiple Fragrant plant item has a spacing between adjacent fragrant plant item；
Wherein, which is divided into three classes pumping source, i.e., according to the difference of fragrant plant type of arrangement A kind of, the second class and third based semiconductor laser one dimensional linear array pumping source；When pumping rhabdolith, nine semiconductor lasers One dimensional linear array pumping source is according to the-the second class of the first kind-third class-the-the second class of the first kind-third class-the-the second class of the first kind-third The sequence uniform ring of class is around the crystal bar to be pumped；
Wherein, the spacing between the adjacent fragrant plant item of the first based semiconductor laser one dimensional linear array pumping source is 5mm；Second based semiconductor swashs The first fragrant plant item of light one dimensional linear array pumping source is retracted 5mm, phase than the first fragrant plant item of the first based semiconductor laser one dimensional linear array pumping source The spacing of adjacent fragrant plant item is 5mm；The first fragrant plant item of third based semiconductor laser one dimensional linear array pumping source compares the second based semiconductor laser again The first fragrant plant item of one dimensional linear array pumping source is retracted 5mm, and the spacing of adjacent fragrant plant item is 5mm；
Adjacent linear array pumping source and the angle at crystal bar center are 40 °, form three-dimensional in the range of the 5mm of both ends in crystal bar pumping area Pumping configuration forms sextuple pumping configuration in remaining pumping area.
2. the laser module of pump optical pumping rhabdolith in rotating semiconductor side as described in claim 1, wherein the semiconductor Laser One-dimensional linear array pumping source includes 5~15 semiconductor laser fragrant plant items, and each fragrant plant item is arranged in a row each along the slow-axis direction of fragrant plant item It is encapsulated on heat sink, fragrant plant length is 10mm.
3. the laser module of pump optical pumping rhabdolith in rotating semiconductor side as described in claim 1, wherein the crystal bar For Nd:YAG laser crystal, Nd is adulterated+3The atom percentage concentration of ion is 0.3%~1.3%.
4. the laser module of pump optical pumping rhabdolith in rotating semiconductor side according to claim 1, wherein the crystal The length of stick is 110mm~230mm, and diameter is 4mm~12mm.
5. the laser module of pump optical pumping rhabdolith in rotating semiconductor side according to claim 1, further includes:
Glass tube, between the pumping source group and crystal bar, for providing cooling channels to carry out to the crystal bar It is cooling.
6. the laser module of pump optical pumping rhabdolith in rotating semiconductor side as claimed in claim 5, wherein the glass tube For quartz glass tube, 1~2mm of surface interval of inner wall and the crystal bar, 1~2mm of wall thickness of glass tube.
7. a kind of laser of rotating semiconductor side pump optical pumping rhabdolith comprising such as any one of claims 1 to 6 institute The laser module stated.
CN201710559791.5A 2017-07-11 2017-07-11 The laser module and laser of rotating semiconductor side pump optical pumping rhabdolith Active CN107147001B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004091058A2 (en) * 2003-04-03 2004-10-21 Jmar Research, Inc. Diode-pumped solid state laser system utilizing high power diode bars
US7346092B1 (en) * 2005-12-16 2008-03-18 Photonics Industries Int'l. Diode side pumped high pulse energy Nd:YLF lasers
CN102606938A (en) * 2011-01-18 2012-07-25 Jvc建伍株式会社 Backlight device, image display device, and method of assembling backlight device
CN202769564U (en) * 2012-07-04 2013-03-06 广东日美光电科技有限公司 Novel uniform-light light-emitting diode (LED) lamp module
CN105222095A (en) * 2014-05-28 2016-01-06 宁波高新区赛尔富电子有限公司 A kind of double LED strip shape lamp

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004091058A2 (en) * 2003-04-03 2004-10-21 Jmar Research, Inc. Diode-pumped solid state laser system utilizing high power diode bars
US7346092B1 (en) * 2005-12-16 2008-03-18 Photonics Industries Int'l. Diode side pumped high pulse energy Nd:YLF lasers
CN102606938A (en) * 2011-01-18 2012-07-25 Jvc建伍株式会社 Backlight device, image display device, and method of assembling backlight device
CN202769564U (en) * 2012-07-04 2013-03-06 广东日美光电科技有限公司 Novel uniform-light light-emitting diode (LED) lamp module
CN105222095A (en) * 2014-05-28 2016-01-06 宁波高新区赛尔富电子有限公司 A kind of double LED strip shape lamp

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