CN103259178A - Compact direct coupling all-solid-state laser device - Google Patents

Compact direct coupling all-solid-state laser device Download PDF

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Publication number
CN103259178A
CN103259178A CN2013101653759A CN201310165375A CN103259178A CN 103259178 A CN103259178 A CN 103259178A CN 2013101653759 A CN2013101653759 A CN 2013101653759A CN 201310165375 A CN201310165375 A CN 201310165375A CN 103259178 A CN103259178 A CN 103259178A
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China
Prior art keywords
laser
laser crystal
crystal face
face
film
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Pending
Application number
CN2013101653759A
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Chinese (zh)
Inventor
曹长庆
曾晓东
刘虎
冯喆珺
高奇
韩宽宽
党文佳
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Xidian University
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Xidian University
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Publication date
Application filed by Xidian University filed Critical Xidian University
Priority to CN2013101653759A priority Critical patent/CN103259178A/en
Publication of CN103259178A publication Critical patent/CN103259178A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a compact direct coupling all-solid-state laser device which mainly comprises laser diode pump sources, a laser crystal, a heat sink and a semiconductor cooler, wherein end faces and side faces of the laser crystal are plated with film. The laser crystal and the semiconductor cooler are fixed on two sides of the heat sink respectively. The laser diode pump sources are laser diode linear array double-side-face symmetrical pumps, and are arranged on two sides of the laser crystal respectively. A first laser crystal face is plated with laser all-trans film, and is a resonant cavity reflector, a six laser crystal face is plated with laser partial transmission film, and is a laser output mirror, a second laser crystal face and a fifth laser crystal face are semi-cylindrical lenses, and are plated with pump light total transmission and laser all-trans film, and texturing processing is carried out on a third laser crystal face and a fourth laser crystal face. According to the compact direct coupling all-solid-state laser device, a cavity-mirror-crystal integrated design is formed, adjustment of a cavity mirror does not need to be carried out, the compact direct coupling all-solid-state laser device is stabler, and integration of the compact direct coupling all-solid-state laser device is convenient.

Description

A kind of compact all solid state laser that directly is coupled
Technical field
The invention belongs to all solid state laser technical field, relate to a kind of compact all solid state laser that directly is coupled.
Background technology
All solid state laser has advantages such as conversion efficiency height, good beam quality, long service life, compact conformation, is a main flow direction of solid state laser development.All solid state laser has in fields such as materials processing, Military Application very to be used widely.But present all solid state laser integrated level is limited, and volume is difficult to do forr a short time, and resonant cavity stability is relatively poor relatively, uses to be subjected to certain limitation.
So need a kind of degree of integration of invention higher, the better novel all solid state laser of resonant cavity stability is to adapt to application demand widely.
Summary of the invention
In order to overcome defective of the prior art and deficiency, solve the problems of the technologies described above, the invention provides a kind of compact all solid state laser that directly is coupled, it is a kind of laser diode linear array two sided symmetric pump, pump light is directly coupled to laser crystal, chamber mirror and laser crystal are integrated, and resonant cavity exempts to regulate, and have all solid state laser of single mode output.
Its technical scheme is as follows:
A kind of compactedness all solid state laser that directly is coupled, mainly comprise the laser crystal of laser diode pumping source, end face and side plated film, heat sink and semiconductor cooler, laser crystal and semiconductor cooler are individually fixed in heat sink both sides, laser diode pumping source is laser diode linear array two sided symmetric pump, lays respectively at the laser crystal both sides.
The described first laser crystal face is coated with the laser film that is all-trans, be cavity mirror, the 6th laser crystal face is coated with the laser part transmission film, be laser output mirror, the second laser crystal face, the 5th laser crystal face are the attached column lens, be coated with pump light full impregnated, the laser film that is all-trans, the 3rd laser crystal face, the 4th laser crystal face are done texturing and are handled.
Further preferred, described laser diode pumping source is positioned at the attached column lens focal line place of laser crystal both sides.
Compared with prior art, beneficial effect of the present invention:
1, the present invention adopts laser diode linear array two sided symmetric pump, can increase the length of pumping linear array as required, can effectively improve the uniformity of pump power and distribution thereof, and then improves light-light conversion efficiency.
2, the present invention adopts the semicolumn design coupling pump light of laser crystal side, need not to add coupled system, and the laser diode linear array is fixed near the attached column lens focal line of laser crystal both sides, and the utilance height of pump energy is convenient to the miniaturization of laser.
3, the present invention adopts the design of laser crystal corner angle sphering, effectively suppresses the generation of laser higher order mode vibration, is conducive to the output of basic mode laser.
4, the present invention adopt semiconductor cooler refrigeration, semiconductor cooler and laser crystal be integrated in heat sink on, be convenient to the miniaturization of laser.
5, the present invention adopts the laser crystal end face coating to form the chamber mirror, as required the crystal two ends are processed into flat-flat chamber (or flat-cavity), have formed chamber mirror crystal integrated design, do not need to carry out the adjusting of chamber mirror, laser is more stable, is convenient to the integrated of all solid state laser.
Description of drawings
Fig. 1 is the compact of the present invention all solid state laser laser vertical view that directly is coupled;
Fig. 2 is the compact of the present invention all solid state laser laser upward view that directly is coupled;
Fig. 3 is the compact of the present invention all solid state laser laser machining shape figure that directly is coupled.
Embodiment
Below in conjunction with the drawings and specific embodiments technical scheme of the present invention is done explanation in further detail.
With reference to Fig. 1-Fig. 3, a kind of compactedness all solid state laser that directly is coupled, the laser crystal 9, heat sink 7 and semiconductor cooler 11 that mainly comprises laser diode pumping source 8, end face and side plated film, laser crystal 9 and semiconductor cooler 11 are individually fixed in heat sink 7 both sides, laser diode pumping source 8 is laser diode linear array two sided symmetric pump, lay respectively at laser crystal 9 both sides, the design of attached column lens is adopted in laser crystal 9 both sides, be used for the coupling pump light, the laser crystal two ends are plated film respectively, as the laserresonator speculum.The described first laser crystal face 1 is coated with the laser film that is all-trans, be cavity mirror, the 6th laser crystal face 6 is coated with the laser part transmission film, is laser output mirror, the cavity mirror relative fixed, do not need to carry out the adjusting of resonant cavity, stability better, the second laser crystal face 2, the 5th laser crystal face 5 are the attached column lens, are coated with pump light full impregnated, the laser film that is all-trans, the 3rd laser crystal face 3, the 4th laser crystal face 4 are done texturing and are handled, and prevent the pump light leakage.Eight corner angle of crystal are made sphering and are handled, and can effectively suppress the vibration of laser high-rder mode.Described laser diode pumping source 8 is positioned at the attached column lens focal line place of laser crystal 9 both sides.
The pump light that laser diode pumping source 8 produces is directly coupled to laser crystal 9 by the semi-cylindrical lens of laser crystal 9 sides, in the chamber that laser crystal 9 both ends of the surface form, form laser generation, the fillet of laser crystal 9 is handled the vibration that has effectively suppressed the laser higher order mode simultaneously, and basic mode laser is through 6 outputs of the 6th laser crystal face.
The above; only be the preferable embodiment of the present invention; protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the present invention discloses, the simple change of the technical scheme that can obtain apparently or equivalence are replaced and are all fallen within the scope of protection of the present invention.

Claims (2)

1. compactedness all solid state laser that directly is coupled, it is characterized in that, mainly comprise the laser crystal (9) of laser diode pumping source (8), end face and side plated film, heat sink (7) and semiconductor cooler (11), laser crystal (9) and semiconductor cooler (11) are individually fixed in heat sink (7) both sides, laser diode pumping source (8) is laser diode linear array two sided symmetric pump, lays respectively at laser crystal (9) both sides;
The described first laser crystal face (1) is coated with the laser film that is all-trans, be cavity mirror, the 6th laser crystal face (6) is coated with the laser part transmission film, be laser output mirror, the second laser crystal face (2), the 5th laser crystal face (5) are the attached column lens, be coated with pump light full impregnated, the laser film that is all-trans, the 3rd laser crystal face (3), the 4th laser crystal face (4) are done texturing and are handled.
2. the compactedness according to claim 1 all solid state laser that directly is coupled is characterized in that described laser diode pumping source (8) is positioned at the attached column lens focal line place of laser crystal (9) both sides.
CN2013101653759A 2013-05-07 2013-05-07 Compact direct coupling all-solid-state laser device Pending CN103259178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013101653759A CN103259178A (en) 2013-05-07 2013-05-07 Compact direct coupling all-solid-state laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2013101653759A CN103259178A (en) 2013-05-07 2013-05-07 Compact direct coupling all-solid-state laser device

Publications (1)

Publication Number Publication Date
CN103259178A true CN103259178A (en) 2013-08-21

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CN2013101653759A Pending CN103259178A (en) 2013-05-07 2013-05-07 Compact direct coupling all-solid-state laser device

Country Status (1)

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CN (1) CN103259178A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108075346A (en) * 2018-01-11 2018-05-25 苏州紫光伟业激光科技有限公司 A kind of microlaser of ultrashort pulse high-peak power

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2620401Y (en) * 2003-05-14 2004-06-09 中国科学院安徽光学精密机械研究所 Double-side pumping all solidified Yb:YAG block laser
CN200993717Y (en) * 2006-07-28 2007-12-19 中国科学院上海光学精密机械研究所 Cladding Doped Slab Waveguide Laser Amplifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2620401Y (en) * 2003-05-14 2004-06-09 中国科学院安徽光学精密机械研究所 Double-side pumping all solidified Yb:YAG block laser
CN200993717Y (en) * 2006-07-28 2007-12-19 中国科学院上海光学精密机械研究所 Cladding Doped Slab Waveguide Laser Amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108075346A (en) * 2018-01-11 2018-05-25 苏州紫光伟业激光科技有限公司 A kind of microlaser of ultrashort pulse high-peak power

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Application publication date: 20130821