CN107058840B - A kind of high temperature preparation method of W-Si-C system reactant - Google Patents
A kind of high temperature preparation method of W-Si-C system reactant Download PDFInfo
- Publication number
- CN107058840B CN107058840B CN201710277284.2A CN201710277284A CN107058840B CN 107058840 B CN107058840 B CN 107058840B CN 201710277284 A CN201710277284 A CN 201710277284A CN 107058840 B CN107058840 B CN 107058840B
- Authority
- CN
- China
- Prior art keywords
- powder
- reactant
- high temperature
- prefabricated block
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1005—Pretreatment of the non-metallic additives
- C22C1/1015—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1036—Alloys containing non-metals starting from a melt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1036—Alloys containing non-metals starting from a melt
- C22C1/1047—Alloys containing non-metals starting from a melt by mixing and casting liquid metal matrix composites
- C22C1/1052—Alloys containing non-metals starting from a melt by mixing and casting liquid metal matrix composites by mixing and casting metal matrix composites with reaction
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
Abstract
The invention discloses a kind of high temperature preparation methods of W-Si-C system reactant, comprising the following steps: (a) weighing: weighing a certain amount of SiC powder and W powder in the balance, the two mass ratio is (0.5:99.5)~(4:96)；(b) prefabricated block: the W powder and SiC powder that step (a) is claimed are uniformly mixed after being dried, and prefabricated block is made using the method for cold pressing and vacuum and low temperature sintering；(c) prepared by melting: carrying out melting reaction to prefabricated block made from step (b), obtains W-Si-C system reactant.The present invention is high-efficient, at low cost compared with traditional solid-phase sintering method, and the W-Si-C system reactant of excellent properties can be made, which can be used for the fields such as electronics industry, nuclear industry, aerospace and high-pressure physics.
Description
Technical field
The present invention relates to a kind of high temperature preparation methods of W-Si-C system reactant.
Background technique
W based composites have the characteristics such as high-melting-point, high-temperature stability, elevated temperature strength, highly thermally conductive, low thermal coefficient of expansion,
Often by as electronic contact material, surface plasma material, rocket nozzle and military armour-piercing material etc., in electronics industry, engineering
The fields such as machinery, aerospace, high-pressure physics are using wide.But due to its often coarse grains, crystal boundary bond strength is low etc. is made
Occur at processing difficulties and black brittleness and temper brittleness, limits its application prospect.
Currently, there is granule modified, plastic deformation of alloying (W-Re, W-Ir etc.), high thermal stability etc. to be used to improve the conjunction of W base
Golden performance, but in order to avoid the generation of intermetallic compound, majority of case all considers non-reaction system.In recent years people are to W
Base reactant has new understanding, especially W-Si-C system reactant again: D.J.Lee etc. enhances W base composite wood in SiC nanowire
There are W for discovery in material, W2C and W5Si3 three-phase coexistence, by being sintered at 1350 DEG C, bending strength reaches 924MPa；
A.Ivekovic etc. is resisted by being pyrolyzed the W-Si-C composite material (SiC, WC, WSi2 three-phase coexistence) being prepared at 1800 DEG C
Curved intensity is 400MPa, and room temperature thermal conductivity is 100Wm-1K-1, and when temperature rise reaches 1000 DEG C, thermal conductivity is down to 32W m-1K-1,
Deng significant effect.But these belong to solid-phase reaction system, and reaction efficiency is lower, and are not directed to high temperature (being greater than 3000 DEG C)
W-Si-C system reactant under reaction.In view of electric arc melting temperature is high (> 3000 DEG C), and make at raw material in fusion process
In melting state, heat and substance diffuser efficiency and reaction rate are increased.In order to improve reaction efficiency and develop more Gao Fanying
At a temperature of high-performance W-Si-C system reactant, the present invention using electric arc melting method prepare W-Si-C system reactant.
Summary of the invention
The technical problems to be solved by the present invention are: providing a kind of W-Si-C system reactant for the above-mentioned state of the art
High temperature preparation method, a kind of zero defect, Quan Zhimi W-Si-C system reactant can be obtained.
A kind of high temperature preparation method of W-Si-C system reactant provided by the invention, due to W powder from SiC powder in different high temperature
Elementary reaction product will be different, in order to obtain high-performance W-Si-C system reactant, need the mass ratio to W powder and SiC powder
Example and main smelting technology parameter are constrained, and material structure and composition are controlled, and then reach control W-Si-C system reactant
The purpose of energy.
The present invention solves its technical problem, and the following technical solution is employed:
The high temperature preparation method of W-Si-C system provided by the invention reactant, comprising the following steps:
(a) weighing: weighing a certain amount of SiC powder and W powder in the balance, and the two mass ratio is (0.5:99.5)~(4:96)；
(b) prefabricated block: the W powder and SiC powder that step (a) is claimed are uniformly mixed after being dried, using cold pressing and very
Prefabricated block is made in empty low sintering method；The drying process, using freezing (subzero 80 DEG C) vacuum drying treatment 12h.
(c) prepared by melting: carrying out melting reaction to prefabricated block made from step (b), obtains W-Si-C system reactant.
In the step of above method (a), the W powder diameter is 500nm~20 μm, and purity 99%, wherein W powder is original
Mass content range is 96wt%~99.5wt% in reactant.
In the step of above method (a), the SiC powder diameter is 40nm~10 μm, and purity 99%, wherein SiC powder exists
Mass content range is 0.5wt%~4wt% in primitive reaction body.
In the step of above method (b), the W is mixed after mixing with SiC powder using low energy ball mill.The low energy ball milling
Mixing procedure, using the ball grinder of polyethylene, zirconia ball, 6~12h of ball milling.
In the step of above method (b), the cold pressing is cold-pressed using tablet press machine, technique are as follows: cold pressing pressure is
30~100MPa, dwell time are 2min~10min；If cold pressing pressure is 30~50MPa, the dwell time is 3~5min.
In the step of above method (b), it is 10 that the vacuum and low temperature sintering, which is in vacuum degree,-3~10-2Vacuum is used under Pa
Discharge plasma sintering or vacuum heating-press sintering；Sintering process are as follows: temperature is 600~1000 DEG C, and soaking time is 5~30min；
Pressure is 30~100MPa.
In the step of above method (c), melting preparation process uses electric arc melting, temperature > 3000 DEG C, technological parameter
Are as follows: output power is 40%~55%, and electric current is 200~275A, and cooling procedure is guaranteed cold by the way of water cooling Cu crystallizer
But rate be 15~20 DEG C/s, remelting 2~3 times.Ar atmosphere is passed through in the smelting furnace reaches pressure relative standard's atmospheric pressure
To -0.04MPa.
W-Si-C system prepared by the present invention reactant, in electronics industry, nuclear industry, aerospace or high-pressure physics field
In application.
The present invention has following major advantage compared with traditional W-Si-C system reactant and its sintering method:
1. preparation process is simple, at low cost, reaction temperature height (> 3000 DEG C), i.e., hot and substance diffusion rate is high, reacts fast
Speed, preparation efficiency are high.
2. the W-Si-C system reactant miscellaneous phase content prepared is few, (it is micro miscellaneous that 3000 DEG C or more high temperature can remove oxide etc.
Matter, cooling velocity is fast after the completion of simultaneous reactions, can avoid such as WC, WSi2Etc. the generation of a small amount of brittlement phase), phase interface conformability
Good, phase interface is clean, and bond strength is high.
3. the W-Si-C system reaction volume density and consistency prepared are high (Quan Zhimi), there is excellent physics and mechanicalness
Energy.It is prepared by material of the present invention, reaction product is W, W2C, W5Si3 under high temperature, due to W2C phase has very high hardness, strong
Degree, bulk modulus and W5Si3With high hardness and good plasticity etc., so that there is W-Si-C reactant high rigidity, compression to answer
The excellent properties such as change, intensity, bulk modulus.
Detailed description of the invention
Fig. 1 is process flow chart of the invention.
Fig. 2 is the XRD spectrum of the W-Si-C system reactant of different ratio.
Fig. 3 is the microscopic appearance figure of the W-Si-C system reactant of different ratio, in which: figure (a) W-0.5wt%SiC；Figure
(b) W-1wt%SiC；Scheme (c) W-2wt%SiC；Scheme (d) W-3wt%SiC；Scheme (e) W-4wt%SiC.
Specific embodiment
Present invention design uses method of smelting, quickly prepares W-Si-C system reactant, technical process is: first
Weigh a certain amount of tungsten powder and SiC powder；It is uniformly mixed after drying process using low energy ball mill, mixed powder is cold-pressed and vacuum is low
Temperature sintering, obtains prefabricated block；High temperature melting is carried out to prefabricated block using electric arc melting, it is equal to obtain composition after rapid cooling
Even, stable W-Si-C system reactant.
Below with reference to examples and drawings, the present invention will be further described, but is not limited to content described below.
Embodiment 1
Prepare high tenacity W-Si-C system reactant.Its preparation process is successively through claiming powder, drying process and mixed powder, prefabricated block
Preparation and electric arc melting.The W-Si-C system reactant is obtained after rapid cooling.The specific steps of which are as follows:
1. claiming powder, drying process and mixed powder:
Weighing purity is 99%, and partial size is the W powder 9.9g and SiC powder 0.1g (W and SiC mass ratio is 99:1) of 500nm,
Mixed-powder is freeze-dried for 24 hours using freeze drying equipment, is uniformly mixed, is mixed using low energy ball mill ball milling 6h afterwards
Powder.
2. prepared by prefabricated block:
The mixed powder obtained in step 1 is fitted into 304L mold, carries out cold moudling (pressure using tablet press machine
30MPa), pressing mold time 3min obtains blocky green compact；By spark plasma sintering (PAS), (vacuum degree is later
10-3Pa pressure is 30MPa, 600 DEG C of heat preservation 5min), obtain prefabricated block.
3. melting and repeated revert-melt:
Open rapid cooling recirculated water, guarantee cooling rate is 15~20 DEG C/s, and the prefabricated block that will be obtained in step 2
It is put into smelting furnace, closes fire door and vacuumize (vacuum degree≤4Pa), lead to argon gas later, make pressure relative standard atmospheric pressure in furnace
Reach -0.04MPa by force, output power is adjusted to 40%~50% (electric current: 200~250A) and carries out preliminary melting by the rapid starting the arc.
Overturn sample later, carry out remelting twice (each remelting output power is adjusted to 40%~50%), after be rapidly cooled to room temperature
(about 25 DEG C) obtain high tenacity W-Si-C system reactant (room temperature compression strain rate can reach 20.3%~23.5%).
Embodiment 2
Prepare high compression-strength W-Si-C system reactant.Its preparation process is successively claimed powder, drying process and mixed powder, prefabricated
Block preparation and electric arc melting.The W-Si-C system reactant is obtained after rapid cooling.The specific steps of which are as follows:
1. claiming powder, drying process and mixed powder:
Weighing purity is 99%, SiC powder 0.4g (W the and SiC mass that the W powder 9.6g and partial size that partial size is 1 μm are 1 μm
It is equal using low energy ball mill ball milling 12h mixing afterwards than being freeze-dried for 24 hours to mixed-powder using freeze drying equipment for 96:4)
It is even.
2. prepared by prefabricated block:
The mixed powder obtained in step 1 is fitted into 304L mold, carries out cold moudling (pressure using tablet press machine
50MPa), pressing mold time 5min obtains blocky green compact；Pass through vacuum heating-press sintering (vacuum degree 10 later-3Pa pressure is
100MPa, 1000 DEG C of heat preservation 30min), obtain prefabricated block.
3. melting and repeated revert-melt:
Open rapid cooling recirculated water, guarantee cooling rate is 15~20 DEG C/s, and the prefabricated block that will be obtained in step 2
It is put into smelting furnace, closes fire door and vacuumize (vacuum degree≤4Pa), lead to argon gas later, make pressure relative standard atmospheric pressure in furnace
Reach -0.04MPa by force, output power is adjusted to 45%~50% (electric current: 225~250A) and carries out preliminary melting by the rapid starting the arc.
Overturn sample later, carry out remelting (each remelting output power is adjusted to 45%~50%) three times, after be rapidly cooled to room temperature
(about 25 DEG C) obtain high compression-strength W-Si-C system reactant (room temperature compressive strength can reach 1941.8~2641.8MPa).
Embodiment 3
Prepare high rigidity W-Si-C system reactant.Its preparation process is successively through claiming powder, drying process and mixed powder, prefabricated block
Preparation and electric arc melting.The W-Si-C system reactant is obtained after rapid cooling.The specific steps of which are as follows:
1. claiming powder, drying process and mixed powder:
Weighing purity is 99%, SiC powder 0.4g (W the and SiC matter that the W powder 9.6g and partial size that partial size is 500nm are 40nm
Amount is than being 96:4) mixed-powder is freeze-dried for 24 hours using freeze drying equipment, it is mixed afterwards using low energy ball mill ball milling 12h
Uniformly.
2. prepared by prefabricated block:
The mixed powder obtained in step 1 is fitted into 304L mold, carries out cold moudling (pressure using tablet press machine
50MPa), pressing mold time 3min obtains blocky green compact；(vacuum degree 10 is sintered by discharge plasma later-3Pa pressure is
30MPa, 600 DEG C of heat preservation 5min), obtain prefabricated block.
3. melting and repeated revert-melt:
Open rapid cooling recirculated water, guarantee cooling rate is 15~20 DEG C/s, and the prefabricated block that will be obtained in step 2
It is put into smelting furnace, closes fire door and vacuumize (vacuum degree≤4Pa), lead to argon gas later, make pressure relative standard atmospheric pressure in furnace
Reach -0.04MPa by force, output power is adjusted to 45%~50% (electric current: 225~250A) and carries out preliminary melting by the rapid starting the arc.
Overturn sample later, carry out remelting (each remelting output power is adjusted to 45%~50%) three times, after be rapidly cooled to room temperature
(about 25 DEG C) obtain high rigidity W-Si-C system reactant (micro-vickers hardness is 15.0~17.5GPa).
Embodiment 4
Prepare high density, high bulk modulus W-Si-C system reactant.Its preparation process is successively claimed powder, is dried and mixes
Powder, prefabricated block preparation and electric arc melting.The W-Si-C system reactant is obtained after rapid cooling.The specific steps of which are as follows:
1. claiming powder, drying process and mixed powder:
Weighing purity is 99%, SiC powder 0.1g (W the and SiC matter that the W powder 9.9g and partial size that partial size is 20 μm are 10 μm
Amount is than being 99:1), mixed-powder is freeze-dried for 24 hours using freeze drying equipment, is mixed afterwards using low energy ball mill ball milling 12h
Uniformly.
2. prepared by prefabricated block:
The mixed powder obtained in step 1 is fitted into 304L mold, carries out cold moudling (pressure using tablet press machine
30MPa), pressing mold time 3min obtains blocky green compact；(vacuum degree 10 is sintered by discharge plasma later-3Pa pressure is
30MPa, 1000 DEG C of heat preservation 5min), obtain prefabricated block.
3. melting and repeated revert-melt:
Open rapid cooling recirculated water, guarantee cooling rate is 15~20 DEG C/s, and the prefabricated block that will be obtained in step 2
It is put into smelting furnace, closes fire door and vacuumize (vacuum degree≤4Pa), lead to argon gas later, make pressure relative standard atmospheric pressure in furnace
Reach -0.04MPa by force, output power is adjusted to 50%~55% (electric current: 250~275A) and carries out preliminary melting by the rapid starting the arc.
Overturn sample later, carry out remelting twice (each remelting output power is adjusted to 50%~55%), after be rapidly cooled to room temperature
(about 25 DEG C) obtain high density, (density is 18.05~18.98g/cm to high bulk modulus W-Si-C system reactant3；Body modulus is
300~350GPa).
Claims (8)
1. a kind of high temperature preparation method of W-Si-C system reactant, it is characterised in that weigh a certain amount of tungsten powder and SiC powder first；
It is uniformly mixed after drying process using low energy ball mill, by mixed powder cold pressing and vacuum and low temperature is sintered, and obtains prefabricated block；It utilizes
Electric arc melting carries out high temperature melting to prefabricated block, and uniform ingredients, stable W-Si-C system reactant are obtained after rapid cooling；
Method includes the following steps:
(a) weighing: weighing a certain amount of SiC powder and W powder in the balance, and the two mass ratio is (0.5:99.5)~(4:96)；
(b) prefabricated block: W powder and SiC powder that step (a) is claimed are uniformly mixed after being dried, using cold pressing and vacuum it is low
Prefabricated block is made in the method for temperature sintering；
(c) prepared by melting: carrying out melting reaction to prefabricated block made from step (b), obtains W-Si-C system reactant.
2. the high temperature preparation method of W-Si-C system according to claim 1 reactant, it is characterised in that in step (a), institute
State W powder diameter be 500nm~20 μm, purity 99%, wherein W powder in primitive reaction body mass content range be 96wt%~
99.5wt%.
3. the high temperature preparation method of W-Si-C system according to claim 1 reactant, it is characterised in that in step (a), institute
State SiC powder diameter be 40nm~10 μm, purity 99%, wherein SiC powder mass content range in primitive reaction body be
0.5wt%~4wt%.
4. the high temperature preparation method of W-Si-C system according to claim 1 reactant, it is characterised in that in step (b), institute
It states and is mixed after W is mixed with SiC powder using low energy ball mill, Ball-milling Time is 6h~12h.
5. the high temperature preparation method of W-Si-C system according to claim 1 reactant, it is characterised in that in step (b), institute
Stating cold pressing is cold-pressed using tablet press machine, technique are as follows: cold pressing pressure is 30~100MPa, the dwell time be 2min~
10min。
6. the high temperature preparation method of W-Si-C system according to claim 1 reactant, it is characterised in that in step (b), institute
State vacuum and low temperature sintering be vacuum degree be 10-3~10-2Vacuum discharge plasma agglomeration or vacuum heating-press sintering are used under Pa；
Sintering process are as follows: temperature is 600~1000 DEG C, and soaking time is 5~30min；Pressure is 30~100MPa.
7. the high temperature preparation method of W-Si-C system according to claim 1 reactant, it is characterised in that in step (c), melt
It refines preparation process and uses electric arc melting, temperature > 3000 DEG C, technological parameter are as follows: output power is 40%~55%, and electric current is
200~275A, cooling procedure by the way of water cooling Cu crystallizer, guarantee cooling rate be 15~20 DEG C/s, remelting 2~3 times.
8. the W-Si-C system reactant of any the method preparation in claim 1 to 7, in electronics industry, nuclear industry, aviation
Application in space flight or high-pressure physics field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710277284.2A CN107058840B (en) | 2017-04-25 | 2017-04-25 | A kind of high temperature preparation method of W-Si-C system reactant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710277284.2A CN107058840B (en) | 2017-04-25 | 2017-04-25 | A kind of high temperature preparation method of W-Si-C system reactant |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107058840A CN107058840A (en) | 2017-08-18 |
| CN107058840B true CN107058840B (en) | 2019-07-23 |
Family
ID=59605434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710277284.2A Active CN107058840B (en) | 2017-04-25 | 2017-04-25 | A kind of high temperature preparation method of W-Si-C system reactant |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107058840B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108018453B (en) * | 2017-12-14 | 2019-10-01 | 武汉理工大学 | A kind of W/B4C heterogeneous composite material and smelting preparation method |
| CN109108298B (en) * | 2018-09-20 | 2020-03-17 | 宁夏大学 | Preparation method of hierarchical structure metal matrix composite material |
| CN111451501B (en) * | 2020-04-03 | 2021-12-21 | 季华实验室 | Preparation method for laser additive manufacturing of tungsten part based on eutectic reaction |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106191479B (en) * | 2016-07-04 | 2018-06-08 | 武汉理工大学 | A kind of non-consumable electric arc melting preparation method of tungsten alloy |
-
2017
- 2017-04-25 CN CN201710277284.2A patent/CN107058840B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107058840A (en) | 2017-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105624445B (en) | A kind of graphene strengthens the preparation method of Cu-base composites | |
| CN107058840B (en) | A kind of high temperature preparation method of W-Si-C system reactant | |
| CN103639408B (en) | A kind of method preparing Intermatallic Ti-Al compound with titantium hydride Al alloy powder short route | |
| CN103045885B (en) | Preparation method for high-density fine grain tungsten copper alloy | |
| CN105695774A (en) | Preparation method for Mg3Sb2-based thermoelectric material | |
| CN102176436B (en) | Process for preparing high-performance Diamond/SiC electronic packaging material | |
| CN112830790B (en) | Hafnium-niobium-based ternary solid solution boride conductive ceramic and preparation method and application thereof | |
| CN105401001B (en) | A kind of powder metallurgic method prepares the process of tungsten particle reinforced aluminum matrix composites | |
| CN107326241B (en) | A method of tungsten molybdenum copper composite material is prepared with discharge plasma sintering | |
| WO2012006501A2 (en) | Potassium / molybdenum composite metal powders, powder blends, products thereof, and methods for producing photovoltaic cells | |
| CN105895795A (en) | Method for preparing composite tin selenide based thermoelectric material | |
| CN107857592A (en) | A kind of high-compactness superhigh temperature Ta4HfC5The preparation method of ceramic bulk material | |
| CN104045350A (en) | Method for preparing silicon nitride /silicon carbide ceramic composite by use of reaction sintering process | |
| CN107513651B (en) | A kind of preparation method of titanium particle reinforced magnesium base composite material | |
| CN101942592A (en) | Method for preparing molybdenum copper alloy by activated sintering | |
| CN109082568A (en) | A kind of fabricated in situ nanometer CuAl2/Al2O3The preparation method of reinforced aluminum matrix composites | |
| CN106906388B (en) | A kind of preparation method of silumin | |
| CN108465817B (en) | Preparation method of high-density pure tungsten product with uniform structure | |
| CN104775045B (en) | A kind of preparation method of the Cu based composites based on negative expansion granule | |
| CN104911383B (en) | Method for preparing Al2O3 dispersion strengthening copper alloy | |
| CN1480282A (en) | Method for preparing nano superfine tungsten powder | |
| CN106191499B (en) | The method that powder metallurgic method prepares silumin | |
| CN107226700A (en) | A kind of Si3N4BN MAS ceramic composites and preparation method thereof | |
| CN107507909A (en) | A kind of porous p-type Bi2Te3Base thermoelectricity material and preparation method thereof | |
| CN104561715B (en) | Height damping magnesium base composite material containing bismuth stannate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |