CN103928542A - Silicon solar cell, manufacturing method and device of silicon solar cell and surface structure of silicon solar cell - Google Patents
Silicon solar cell, manufacturing method and device of silicon solar cell and surface structure of silicon solar cell Download PDFInfo
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- CN103928542A CN103928542A CN201410182303.XA CN201410182303A CN103928542A CN 103928542 A CN103928542 A CN 103928542A CN 201410182303 A CN201410182303 A CN 201410182303A CN 103928542 A CN103928542 A CN 103928542A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 223
- 239000010703 silicon Substances 0.000 title claims abstract description 223
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 221
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 27
- 210000004027 cell Anatomy 0.000 claims description 135
- 239000000243 solution Substances 0.000 claims description 105
- 239000013528 metallic particle Substances 0.000 claims description 62
- 238000002360 preparation method Methods 0.000 claims description 49
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 48
- 239000007864 aqueous solution Substances 0.000 claims description 34
- 239000007800 oxidant agent Substances 0.000 claims description 26
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 24
- 239000007921 spray Substances 0.000 claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 15
- 239000003638 chemical reducing agent Substances 0.000 claims description 13
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000003153 chemical reaction reagent Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 239000011259 mixed solution Substances 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- 239000012266 salt solution Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 7
- 238000005507 spraying Methods 0.000 abstract description 4
- 150000003376 silicon Chemical class 0.000 abstract description 2
- 239000002923 metal particle Substances 0.000 abstract 4
- 230000002195 synergetic effect Effects 0.000 abstract 1
- 101150054854 POU1F1 gene Proteins 0.000 description 33
- 239000002245 particle Substances 0.000 description 27
- 238000002310 reflectometry Methods 0.000 description 14
- 239000002105 nanoparticle Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 5
- 239000001509 sodium citrate Substances 0.000 description 5
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- 239000012279 sodium borohydride Substances 0.000 description 4
- 229910000033 sodium borohydride Inorganic materials 0.000 description 4
- 239000000376 reactant Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910003803 Gold(III) chloride Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000011260 aqueous acid Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RJHLTVSLYWWTEF-UHFFFAOYSA-K gold trichloride Chemical compound Cl[Au](Cl)Cl RJHLTVSLYWWTEF-UHFFFAOYSA-K 0.000 description 2
- 229940076131 gold trichloride Drugs 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a surface structure of a silicon solar cell. The surface structure of the silicon solar cell comprises pits formed in the surface of the silicon solar cell and metal particles located in the pits. The invention further provides the silicon solar cell which is of the surface structure and high in quantum efficiency and a method capable of manufacturing the silicon solar cell, wherein the method is easy to operate and low in cost. The manufacturing method of the silicon solar cell includes the following steps that a reaction solution is prepared, the metal particles are prepared, and etching is performed to obtain the silicon solar cell. The invention further provides a manufacturing device of the silicon solar cell. The manufacturing device of the silicon solar cell comprises a heating device used for heating the silicon solar cell piece, a spraying device used for spraying the reaction solution to the heated silicon solar cell piece, and a containing device used for containing etchant. The texture structure of the surface of the silicon solar cell is changed through the pits in which the metal particles are located so that synergistic effect can be generated, when light is shone to the metal particles, the surface plasma resonance effect is generated, and thus the conversion efficiency is improved.
Description
Technical field
The invention belongs to technical field of solar batteries, be specifically related to a kind of silicon and be solar cell and its preparation method and preparation facilities with and surface texture.
Background technology
Recently,, along with the development of research and production technology, solar cell will be in traditional energy field performance significant role.It is solar cell, multi-element compounds thin-film solar cells and organic dye sensitized solar cell etc. that present market mainly contains silicon.Wherein silicon be solar cell because of its leading products that become solar cell in the advantage aspect raw material deposit, kept more than 80% occupation rate of market.Compared with the solar cell of other types, its research and production are relatively ripe and stable, photoelectric conversion efficiency is higher, and between the coming years, the great demand of global various countries photovoltaic generation is that the growth momentum of solar cell will keep powerful and can not take a turn for the worse by impelling silicon.Have many advantages although silicon is solar cell, silicon materials price is relatively high, and this makes it in price in the status of weak tendency comparatively.Therefore, be that solar cell surface is made light trapping structure at silicon, reduce surperficial reflectivity, thereby reduce widely the reflection loss of sunlight at silicon chip surface, contribute to improve the photoelectric conversion efficiency of battery, thereby can utilize thinner silicon materials to obtain higher efficiency, can effectively reduce costs.Therefore, utilize and fall into luminous effect to improve silicon be the hot issue that the conversion efficiency of solar cell becomes current research solar cell.
Now, a kind of effective means that reaches sunken luminous effect is exactly to be that solar cell surface forms nanostructure at silicon, such as nano wire, pit etc., conventionally the method adopting is metal auxiliary etch, utilizing the method for chemical deposition or thermal evaporation is that solar cell surface forms metallic particles at silicon, and these metallic particles are just that solar cell surface is etched into different nanostructures by silicon as catalyst under chemical reaction effect.But these method operations are more loaded down with trivial details, and cost is higher, and this all likely can affect the future development that silicon is solar cell.
Summary of the invention
For the problems of the prior art, the invention provides a kind of structure uniqueness, the silicon that conversion efficiency is high is surface structure of solar cell, and the high silicon of a kind of quantum efficiency is solar cell, and a kind of simple to operate, with low costly can prepare the method and apparatus that this silicon is solar cell.
The present invention is achieved through the following technical solutions:
A kind of silicon provided by the invention is surface structure of solar cell, is included in silicon and is the pit that solar cell surface forms and be seated in the metallic particles in pit.
Preferably, the diameter of pit is 5-100 nanometer, and the degree of depth is 5-2000 nanometer; The degree of depth that metallic particles is seated in pit is 5-2000 nanometer.
Further, the diameter of pit is 20-50 nanometer, and the degree of depth is 100-1000 nanometer; The degree of depth that metallic particles is seated in pit is 100-1000 nanometer.
Preferably, metallic particles is gold, silver, copper, aluminium, platinum or palladium.
Preferably, the bottom of pit at least extend into the Doped n layer that silicon is solar cell, and the metallic particles in corresponding pit is seated in Doped n layer.
Preferably, the bottom of pit at least extend into the doping p layer that silicon is solar cell, and the metallic particles in corresponding pit is seated in doping p layer.
Preferably, the bottom of pit at least extend into the p-n junction district that silicon is solar cell, and the metallic particles in corresponding pit is seated in p-n junction district.
It is solar cell that the present invention also provides a kind of silicon, and it is surface structure of solar cell that its surface texture adopts the silicon described in above any one technical scheme.
It is the preparation method of solar cell that the present invention also provides a kind of silicon, comprises the steps:
1) preparation feedback solution: prepare reaction solution by the aqueous solution of slaine with after a kind of can mixing with the reduction reagent solution that described aqueous metal salt reaction generates metallic particles;
2) prepare metallic particles: be that solar battery sheet is heated to 30-500 DEG C by silicon, the silicon that reaction solution is sprayed to heating is on solar battery sheet, form corresponding metallic particles on its surface;
3) etch silicon is solar battery sheet: be that solar battery sheet immerses in etching liquid by the silicon that forms metallic particles on surface, obtaining silicon is as described in the present invention solar cell.
Preferably, metallic particles is gold, silver, copper, aluminium, platinum or palladium; The molar concentration of metal salt solution is: 0.001mol/L-1mol/L, and reductant solution molar concentration is 0.0001mol/L-0.1mol/L; Metal salt solution is 1:(1～1000 with the volume ratio of corresponding reductant solution).
Further, etching liquid adopts the mixed solution of aqueous oxidizing agent solution and hydrofluoric acid.
Further, aqueous oxidizing agent solution is hydrogen peroxide, Na
2s
2o
8the aqueous solution, KMnO
4the aqueous solution, K
2cr
2o
7the aqueous solution, Fe (NO
3)
3the aqueous solution, Ni (NO
3)
2the aqueous solution, Mg (NO
3)
2the aqueous solution or nitric acid.
Further, the volume ratio of aqueous oxidizing agent solution and hydrofluoric acid is 1:(1～100), the molar concentration of hydrofluoric acid is 0.01～20mol/L, the molar concentration of oxidant is 0.001～5mol/L.
It is the preparation facilities of solar cell that the present invention also provides a kind of silicon, comprise for heating the heater that silicon is solar battery sheet, with be the spray equipment on solar battery sheet for reaction solution being sprayed to heated silicon, and for holding the storing apparatus of etching liquid.
Preferably, heater is that to be heated to temperature be 30-500 DEG C to solar battery sheet by silicon.
Compared with prior art, the present invention has following useful technique effect:
Silicon of the present invention is surface structure of solar cell, by at silicon being the pit that solar cell surface forms inside and be located metallic particles, its surperficial texture is changed, produce synergy by pit and the metallic particles being seated in pit, in the time that light is irradiated to the metallic particles being seated in pit, metallic particles can produce surface plasmon resonance effect, is embodied in: this effect can excite the free electron of metallic particles to enter silion cell; Can produce local Electromagnetic enhancement, excite more photo-generated carrier in silion cell; The resonance energy being created in metallic particles can be transferred in silion cell, produces more photo-generated carrier.These performances all can increase the photo-generated carrier of battery effectively, are conducive to the raising of battery quantum efficiency, and making silicon is that the reflectivity of battery has declined 8%, and quantum efficiency is obviously improved, and short-circuit current density has improved 7%; Greatly increase that to have the silicon of this structure be the efficiency of solar cell.
Further, on the one hand, the diameter control of pit, at nanoscale, utilizes its nano effect to improve sunken light effect; The degree of depth of its pits is darker, and the reflectivity of silion cell can be lower, thereby the silicon that can better meet under different condition is the requirement of solar cell; On the other hand, utilize the metallic particles being seated in hole to realize both synergies of surface plasmon resonance effect, can improve the quantum efficiency of solar cell.
Further, realize on Different lightwave wave band the specific aim of quantum efficiency is strengthened by the selection to different metal.
The preparation method of structure of the present invention, the metallic particles that utilization forms on surface is as the catalyst of etching, make to have on surface the place of metallic particles to accelerate etching, thereby formation bowl configurations, making silicon is that the texture of solar cell surface changes that thereby to reduce silicon be the reflectivity of solar cell, thereby improves the quantum efficiency of solar cell; Metallic particles and pit form surface texture jointly, produce synergy, in the time of illumination, metallic particles produces surface plasma, and this surface plasma is in battery, to form exciton or charge carrier at silicon, also can be called as electron-hole pair, be conducive to improve the photovoltaic property of silion cell.Not only prepare metallic particles cost low, simple to operate; Cost of material is cheap, easily obtains, with low cost, is applicable to suitability for industrialized production, can simplify preparation facilities, enhances productivity.
Brief description of the drawings
Fig. 1 is that in example 1 of the present invention, silicon is the schematic cross-section of solar cell surface pit; Wherein: 1 is pit, 3 for silicon be solar cell surface.
Fig. 2 is that in example 1 of the present invention, silicon is the schematic cross-section of surface structure of solar cell; Wherein: 1 is pit, 2 is metallic particles, 3 for silicon be solar cell surface.
Fig. 3 is that silicon is the electron scanning micrograph of the silver nano-grain of solar cell surface.
Fig. 4 is that the silicon with surface texture is the electron scanning micrograph of solar cell.
Fig. 5 is that the silicon with surface texture is that solar cell sees through reverberation spectrogram at ultraviolet light to visible ray near infrared light.
Fig. 6 is that the silicon with surface texture is the quantum efficiency figure of solar cell.
Fig. 7 is that the silicon with surface texture is the preparation facilities schematic diagram of solar cell, wherein: 4 heaters, 5 is spray equipment, 6 for silicon be solar battery sheet.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, and the explanation of the invention is not limited.
Embodiment 1
Silicon is a preparation method for solar cell, comprises the steps:
1) preparation feedback solution: by the silver nitrate aqueous solution of 0.01mol/L and a kind of reduction reagent solution that can react with silver nitrate aqueous solution the 0.007mol/L that generates silver-colored simple substance particle, prepare reaction solution after mixing with the volume ratio of 1:50; In this example, adopt sodium citrate solution as reductant solution.
2) prepare metallic particles: be that solar battery sheet is heated to 100 DEG C by silicon, utilization comprises for heating the heater that silicon is solar battery sheet 6, be the spray equipment 5 on solar battery sheet with spray to heated silicon for reaction solution, and be the preparation facilities of solar cell for a kind of silicon of the storing apparatus that holds etching liquid, the silicon that reaction solution is sprayed to heating is on solar battery sheet, forms corresponding silver-colored particle on its surface;
3) etch silicon is solar battery sheet: by the silicon that forms silver-colored particle on surface be solar battery sheet to be immersed in volume ratio be etching in the aqueous oxidizing agent solution of 1:4 and the mixed solution of hydrofluoric acid, obtaining surface texture, to be included in silicon be that the pit 1 forming in solar cell surface and the silicon that is seated in the silver-colored particle in pit 1 are solar cell; Wherein, aqueous oxidizing agent solution adopts the hydrogen peroxide of 0.25mol/L, and the molar concentration of hydrofluoric acid is 2mol/L.
The silicon obtaining is that solar cell adopts the S4800 of Hitachi field emission scanning electron microscope, Lambda950 type UV, visible light infrared spectrometer and quantum efficiency tester to characterize, its surperficial structure incorporates shown in Fig. 1 and Fig. 2, utilize the result of quantum efficiency to calculate short-circuit current density, the results are shown in Figure 3～6.
As depicted in figs. 1 and 2, it is surface structure of solar cell that preparation method of the present invention obtains a kind of silicon, is included in silicon and is the pit 1 forming in solar cell surface 3 and be seated in the metallic particles 2 in pit 1.In this preferred embodiment, silicon is that solar cell surface 3 is pyramid shape but is not limited only to the structure of pyramid shape, by described preparation method's processing, on pyramid surface, form above-mentioned surface texture, wherein, the diameter of pit 1 is 5-100 nanometer, and the degree of depth is 5-2000 nanometer; The degree of depth that metallic particles 2 is seated in pit 1 is 5-2000 nanometer; The diameter of metallic particles 2 is less than the diameter of pit 1, and the metal in metallic particles 2 is gold, silver, copper, aluminium, platinum or palladium, in this preferred embodiment, describes as an example of silver example, and preferred, the diameter of pit 1 is 20-50 nanometer, and the degree of depth is 100-1000 nanometer; The degree of depth that metallic particles 2 is seated in pit is 100-1000 nanometer.
Concrete, as seen from Figure 3, be that solar cell surface has formed the silver nano-grain that diameter is about 25nm at silicon; As seen from Figure 4, the pit diameter forming on surface is about 30nm, and the degree of depth is about 200-300nm, and silver nano-grain is located the degree of depth and is about 200-300nm; As seen from Figure 5, form silicon and be the silicon of surface structure of solar cell and be cell piece under the test optical wavelength of 350～1100nm, its reflectivity has reduced by 8%; As seen from Figure 6, the silicon that has silicon and be surface structure of solar cell is that the quantum efficiency under the cell piece test optical wavelength that is 350～1100nm at wavelength strengthens, and tool improves significantly, and short-circuit current density is also significantly improved, can be up to 7%.
As shown in Figure 7, preferably, a kind of silicon is the preparation facilities of solar cell, comprise that realizing is the heater that solar battery sheet 6 heats to silicon, heater can be that the transport tape of solar battery sheet 6 is integrated or independent mutually with transmission silicon, when when integrated, heating operation can be by the roller of transport tape below or phase independent heating, be directly that solar battery sheet 6 is transported to spraying position by the silicon after heating, heating-up temperature is 30-500 DEG C; Coordinate spray equipment 4 that reaction solution is sprayed on to silicon is solar battery sheet 6 surfaces simultaneously, as shown in Figure 7, it is solar cell 6 tops that spraying mouth in spray equipment 4 is positioned at silicon, last is that solar cell 6 is immersed in storing apparatus again by the silicon of Surface Creation metallic particles 2, by the etching of etching liquid, form pit 1 in the place that has metallic particles 2, the metallic particles 2 being located in pit 1 and pit 1 together forms surface texture, and the silicon that obtains having surface texture of the present invention is solar battery sheet.
Embodiment 2
Silicon is a preparation method for solar cell, comprises the steps:
1) preparation feedback solution: by tetrachloric acid Jinsui River solution of 0.03mol/L and a kind of reduction reagent solution that can generate with tetrachloric acid Jinsui River solution reaction the 0.035mol/L of golden simple substance particle, prepare reaction solution after mixing with the volume ratio of 1:300; In this example, adopt sodium citrate solution as reductant solution.
2) prepare metallic particles: be that solar battery sheet is heated to 200 DEG C by silicon, utilization comprises for heating the heater that silicon is solar battery sheet 6, be the spray equipment 5 on solar battery sheet with spray to heated silicon for reaction solution, and be the preparation facilities of solar cell for a kind of silicon of the storing apparatus that holds etching liquid, the silicon that reaction solution is sprayed to heating is on solar battery sheet, forms corresponding gold grain on its surface;
3) etch silicon is solar battery sheet: by form on surface the silicon of gold grain be solar battery sheet to be immersed in volume ratio be etching in the aqueous oxidizing agent solution of 1:40 and the mixed solution of hydrofluoric acid, obtaining surface texture, to be included in silicon be that the pit 1 forming in solar cell surface and the silicon that is seated in the gold grain in pit 1 are solar cell; Wherein, aqueous oxidizing agent solution adopts the Na of 0.1mol/L
2s
2o
8the aqueous solution, the molar concentration of hydrofluoric acid is 20mol/L.
Be finally that solar cell surface has formed the gold nano grain that diameter is about 40nm at silicon; The pit diameter forming on surface is about 50nm, and the degree of depth is about 700-1000nm, and gold nano grain is located the degree of depth and is about 700-1000nm; Making silicon is that the reflectivity of battery has declined 8%, and quantum efficiency is obviously improved, and short-circuit current density has improved 7%.
Embodiment 3
Silicon is a preparation method for solar cell, comprises the steps:
1) preparation feedback solution: by the copper nitrate aqueous solution of 0.05mol/L and a kind of reduction reagent solution that can react with copper nitrate aqueous solution the 0.05mol/L that generates copper simple substance particle, prepare reaction solution after mixing with the volume ratio of 1:1; In this example, adopt sodium borohydride solution as reductant solution.
2) prepare metallic particles: be that solar battery sheet is heated to 400 DEG C by silicon, utilization comprises for heating the heater that silicon is solar battery sheet 6, be the spray equipment 5 on solar battery sheet with spray to heated silicon for reaction solution, and be the preparation facilities of solar cell for a kind of silicon of the storing apparatus that holds etching liquid, the silicon that reaction solution is sprayed to heating is on solar battery sheet, forms corresponding copper particle on its surface;
3) etch silicon is solar battery sheet: by the silicon that forms copper particle on surface be solar battery sheet to be immersed in volume ratio be etching in the aqueous oxidizing agent solution of 1:40 and the mixed solution of hydrofluoric acid, obtaining surface texture, to be included in silicon be that the pit 1 forming in solar cell surface and the silicon that is seated in the copper particle in pit 1 are solar cell; Wherein, aqueous oxidizing agent solution adopts the KMnO of 0.05mol/L
4the aqueous solution, the molar concentration of hydrofluoric acid is 14mol/L.
Be finally that solar cell surface has formed the copper nano particles that diameter is about 15nm at silicon; The pit diameter forming on surface is about 20nm, and the degree of depth is about 5-160nm, and copper nano particles is located the degree of depth and is about 5-160nm; Making silicon is that the reflectivity of battery has declined 8%, and quantum efficiency is obviously improved, and short-circuit current density has improved 7%.
Embodiment 4
Silicon is a preparation method for solar cell, comprises the steps:
1) preparation feedback solution: by the aluminum nitrate aqueous solution of 0.001mol/L and a kind of reduction reagent solution that can react with aluminum nitrate aqueous solution the 0.0001mol/L that generates aluminium simple substance particle, prepare reaction solution after mixing with the volume ratio of 1:1000; In this example, adopt sodium citrate solution as reductant solution.
2) prepare metallic particles: be that solar battery sheet is heated to 80 DEG C by silicon, utilization comprises that for heating and carrying silicon be the heater of solar battery sheet 6, be the spray equipment 5 on solar battery sheet with spray to heated silicon for reaction solution, and be the preparation facilities of solar cell for a kind of silicon of the storing apparatus that holds etching liquid, the silicon that reaction solution is sprayed to heating is on solar battery sheet, forms corresponding alumina particles on its surface;
3) etch silicon is solar battery sheet: by form on surface the silicon of alumina particles be solar battery sheet to be immersed in volume ratio be etching in the aqueous oxidizing agent solution of 1:100 and the mixed solution of hydrofluoric acid, obtaining surface texture, to be included in silicon be that the pit 1 forming in solar cell surface and the silicon that is seated in the alumina particles in pit 1 are solar cell; Wherein, aqueous oxidizing agent solution adopts the K of 0.25mol/L
2cr
2o
7the aqueous solution, the molar concentration of hydrofluoric acid is 0.01mol/L.
Be finally that solar cell surface has formed the aluminum nanoparticles that diameter is about 30nm at silicon; The pit diameter forming on surface is about 50nm, and the degree of depth is about 600-900nm, and aluminum nanoparticles is located the degree of depth and is about 600-900nm; Making silicon is that the reflectivity of battery has declined 8%, and quantum efficiency is obviously improved, and short-circuit current density has improved 7%.
Embodiment 5
Silicon is a preparation method for solar cell, comprises the steps:
1) preparation feedback solution: by the H of 0.007mol/L
2ptCl
6the aqueous solution and one can with H
2ptCl
6reactant aqueous solution generates the reduction reagent solution of the 0.01mol/L of platinum simple substance particle, after mixing, prepares reaction solution with the volume ratio of 1:100; In this example, adopt sodium borohydride solution as reductant solution.
2) prepare metallic particles: be that solar battery sheet is heated to 500 DEG C by silicon, utilization comprises that for heating and carrying silicon be the heater of solar battery sheet 6, be the spray equipment 5 on solar battery sheet with spray to heated silicon for reaction solution, and be the preparation facilities of solar cell for a kind of silicon of the storing apparatus that holds etching liquid, the silicon that reaction solution is sprayed to heating is on solar battery sheet, forms corresponding platinum grain on its surface;
3) etch silicon is solar battery sheet: by form on surface the silicon of platinum grain be solar battery sheet to be immersed in volume ratio be etching in the aqueous oxidizing agent solution of 1:20 and the mixed solution of hydrofluoric acid, obtaining surface texture, to be included in silicon be that the pit 1 forming in solar cell surface and the silicon that is seated in the platinum grain in pit 1 are solar cell; Wherein, aqueous oxidizing agent solution adopts the Fe (NO of 0.0675mol/L
3)
3the aqueous solution, the molar concentration of hydrofluoric acid is 0.9mol/L.
Be finally that solar cell surface has formed the Pt nanoparticle that diameter is about 80nm at silicon; The pit diameter forming on surface is about 100nm, and the degree of depth is about 100-200nm, and Pt nanoparticle is located the degree of depth and is about 100-200nm; Making silicon is that the reflectivity of battery has declined 8%, and quantum efficiency is obviously improved, and short-circuit current density has improved 7%.
Embodiment 6
Silicon is a preparation method for solar cell, comprises the steps:
1) preparation feedback solution: by the Ag of 1mol/L (NH3)
2+the aqueous solution and one can with Ag (NH3)
2+reactant aqueous solution generates the reduction reagent solution of the 0.1mol/L of silver-colored simple substance particle, after mixing, prepares reaction solution with the volume ratio of 1:900; In this example, adopt sodium borohydride solution as reductant solution.
2) prepare metallic particles: be that solar battery sheet is heated to 300 DEG C by silicon, utilization comprises that for heating and carrying silicon be the heater of solar battery sheet 6, be the spray equipment 5 on solar battery sheet with spray to heated silicon for reaction solution, and be the preparation facilities of solar cell for a kind of silicon of the storing apparatus that holds etching liquid, the silicon that reaction solution is sprayed to heating is on solar battery sheet, forms corresponding silver-colored particle on its surface;
3) etch silicon is solar battery sheet: by the silicon that forms silver-colored particle on surface be solar battery sheet to be immersed in volume ratio be etching in the aqueous oxidizing agent solution of 1:80 and the mixed solution of hydrofluoric acid, obtaining surface texture, to be included in silicon be that the pit 1 forming in solar cell surface and the silicon that is seated in the silver-colored particle in pit 1 are solar cell; Wherein, aqueous oxidizing agent solution adopts the Ni (NO of 0.1mol/L
3)
2the aqueous solution, the molar concentration of hydrofluoric acid is 5mol/L.
Be finally that solar cell surface has formed the silver nano-grain that diameter is about 35nm at silicon; The pit diameter forming on surface is about 50nm, and the degree of depth is about 280-400nm, and silver nano-grain is located the degree of depth and is about 280-400nm; Making silicon is that the reflectivity of battery has declined 8%, and quantum efficiency is obviously improved, and short-circuit current density has improved 7%.
Embodiment 7
Silicon is a preparation method for solar cell, comprises the steps:
1) preparation feedback solution: by the gold trichloride aqueous solution of 0.1mol/L and a kind of reduction reagent solution that can generate with gold trichloride reactant aqueous solution the 0.08mol/L of golden simple substance particle, prepare reaction solution after mixing with the volume ratio of 1:400; In this example, adopt sodium citrate solution as reductant solution.
2) prepare metallic particles: be that solar battery sheet is heated to 170 DEG C by silicon, utilization comprises that for heating and carrying silicon be the heater of solar battery sheet 6, be the spray equipment 5 on solar battery sheet with spray to heated silicon for reaction solution, and be the preparation facilities of solar cell for a kind of silicon of the storing apparatus that holds etching liquid, the silicon that reaction solution is sprayed to heating is on solar battery sheet, forms corresponding gold grain on its surface;
3) etch silicon is solar battery sheet: by form on surface the silicon of gold grain be solar battery sheet to be immersed in volume ratio be etching in the aqueous oxidizing agent solution of 1:1 and the mixed solution of hydrofluoric acid, obtaining surface texture, to be included in silicon be that the pit 1 forming in solar cell surface and the silicon that is seated in the gold grain in pit 1 are solar cell; Wherein, aqueous oxidizing agent solution adopts the Mg (NO of 0.01mol/L
3)
2the aqueous solution, the molar concentration of hydrofluoric acid is 1.0mol/L.
Be finally that solar cell surface has formed the gold nano grain that diameter is about 50nm at silicon; The pit diameter forming on surface is about 60nm, and the degree of depth is about 140-320nm, and gold nano grain is located the degree of depth and is about 140-320nm; Making silicon is that the reflectivity of battery has declined 8%, and quantum efficiency is obviously improved, and short-circuit current density has improved 7%.
Embodiment 8
Silicon is a preparation method for solar cell, comprises the steps:
1) preparation feedback solution: by the aluminum nitrate aqueous solution of 0.01mol/L and a kind of reduction reagent solution that can react with aluminum nitrate aqueous solution the 0.05mol/L that generates aluminium simple substance particle, prepare reaction solution after mixing with the volume ratio of 1:200; In this example, adopt sodium citrate solution as reductant solution.
2) prepare metallic particles: be that solar battery sheet is heated to 30 DEG C by silicon, utilization comprises that for heating and carrying silicon be the heater of solar battery sheet 6, be the spray equipment 5 on solar battery sheet with spray to heated silicon for reaction solution, and be the preparation facilities of solar cell for a kind of silicon of the storing apparatus that holds etching liquid, the silicon that reaction solution is sprayed to heating is on solar battery sheet, forms corresponding alumina particles on its surface;
3) etch silicon is solar battery sheet: by form on surface the silicon of alumina particles be solar battery sheet to be immersed in volume ratio be etching in the aqueous oxidizing agent solution of 1:30 and the mixed solution of hydrofluoric acid, obtaining surface texture, to be included in silicon be that the pit 1 forming in solar cell surface and the silicon that is seated in the alumina particles in pit 1 are solar cell; Wherein, aqueous oxidizing agent solution adopts the nitric acid of 5mol/L, and the molar concentration of hydrofluoric acid is 10mol/L.
Be finally that solar cell surface has formed the aluminum nanoparticles that diameter is about 60nm at silicon; The pit diameter forming on surface is about 70nm, and the degree of depth is about 300-500nm, and aluminum nanoparticles is located the degree of depth and is about 300-500nm; Making silicon is that the reflectivity of battery has declined 8%, and quantum efficiency is obviously improved, and short-circuit current density has improved 7%.
Embodiment 9
Silicon is a preparation method for solar cell, comprises the steps:
1) preparation feedback solution: by the chlorine palladium aqueous acid of 0.0015mol/L and a kind of reduction reagent solution that can react with chlorine palladium aqueous acid the 0.009mol/L that generates palladium simple substance particle, prepare reaction solution after mixing with the volume ratio of 1:200; In this example, adopt sodium borohydride solution as reductant solution.
2) prepare metallic particles: be that solar battery sheet is heated to 150 DEG C by silicon, utilization comprises that for heating and carrying silicon be the heater of solar battery sheet 6, be the spray equipment 5 on solar battery sheet with spray to heated silicon for reaction solution, and be the preparation facilities of solar cell for a kind of silicon of the storing apparatus that holds etching liquid, the silicon that reaction solution is sprayed to heating is on solar battery sheet, forms corresponding palladium particle on its surface;
3) etch silicon is solar battery sheet: by the silicon that forms palladium particle on surface be solar battery sheet to be immersed in volume ratio be etching in the aqueous oxidizing agent solution of 1:60 and the mixed solution of hydrofluoric acid, obtaining surface texture, to be included in silicon be that the pit 1 forming in solar cell surface and the silicon that is seated in the interior palladium-silver particle of pit 1 are solar cell; Wherein, aqueous oxidizing agent solution adopts the hydrogen peroxide of 2mol/L, and the molar concentration of hydrofluoric acid is 11mol/L.
Be finally that solar cell surface has formed the palladium nano-particles that diameter is about 3nm at silicon; The pit diameter forming on surface is about 5nm, and the degree of depth is about 400-630nm, and palladium nano-particles is located the degree of depth and is about 400-630nm; Making silicon is that the reflectivity of battery has declined 8%, and quantum efficiency is obviously improved, and short-circuit current density has improved 7%.
Embodiment 10
On the basis of embodiment 1, make metallic particles be seated in Doped n layer; Make the bottom of pit 1 at least be deep into the Doped n layer that silicon is solar cell, the metallic particles 2 in corresponding pit 1 can be seated in Doped n layer.
Embodiment 11
On the basis of embodiment 1, make metallic particles be seated in doping p layer; Make the bottom of pit 1 at least be deep into the doping p layer that silicon is solar cell, the metallic particles 2 in corresponding pit 1 can be seated in doping p layer.
Embodiment 12
On the basis of embodiment 1, make metallic particles be seated in p-n junction district; Make the bottom of pit 1 at least be deep into the p-n junction district that silicon is solar cell, the metallic particles 2 in corresponding pit 1 can be seated in p-n junction district.
Other are each value not enumerating in the preparation method of solar cell at a kind of silicon of the present invention, as long as carrying out in its corresponding span and meet the required condition of reaction, all can realize object of the present invention and reach effect of the present invention, making silicon is that the reflectivity of battery has at least declined 8%, quantum efficiency is obviously improved, short-circuit current density has at least improved 7%, thereby significantly improves the efficiency that silicon is solar cell.
Claims (15)
1. silicon is a surface structure of solar cell, it is characterized in that, is included in silicon and is the pit (1) that solar cell surface (3) forms and be seated in the interior metallic particles (2) of pit (1).
2. a kind of silicon according to claim 1 is surface structure of solar cell, it is characterized in that, the diameter of pit (1) is 5-100 nanometer, and the degree of depth is 5-2000 nanometer; The degree of depth that metallic particles (2) is seated in pit (1) is 5-2000 nanometer.
3. a kind of silicon according to claim 2 is surface structure of solar cell, it is characterized in that, the diameter of pit (1) is 20-50 nanometer, and the degree of depth is 100-1000 nanometer; The degree of depth that metallic particles (2) is seated in pit (1) is 100-1000 nanometer.
4. be surface structure of solar cell according to a kind of silicon described in claim 1 or 2 or 3, it is characterized in that, metallic particles (2) is gold, silver, copper, aluminium, platinum or palladium.
5. a kind of silicon according to claim 1 is surface structure of solar cell, it is characterized in that, the bottom of pit (1) is at least deep into the Doped n layer that silicon is solar cell, and the metallic particles (2) in corresponding pit (1) is seated in Doped n layer.
6. a kind of silicon according to claim 1 is surface structure of solar cell, it is characterized in that, the bottom of pit (1) is at least deep into the doping p layer that silicon is solar cell, and the metallic particles (2) in corresponding pit (1) is seated in doping p layer.
7. a kind of silicon according to claim 1 is surface structure of solar cell, it is characterized in that, the bottom of pit (1) is at least deep into the p-n junction district that silicon is solar cell, and the metallic particles (2) in corresponding pit (1) is seated in p-n junction district.
8. silicon is a solar cell, it is characterized in that, its surface texture is that the silicon as described in claim 1-7 any one is surface structure of solar cell.
9. silicon is a preparation method for solar cell, it is characterized in that, comprises the steps:
1) preparation feedback solution: prepare reaction solution by the aqueous solution of slaine with after a kind of can mixing with the reduction reagent solution that described aqueous metal salt reaction generates metallic particles;
2) prepare metallic particles: be that solar battery sheet is heated to 30-500 DEG C by silicon, the silicon that reaction solution is sprayed to heating is on solar battery sheet, form corresponding metallic particles on its surface;
3) etch silicon is solar battery sheet: be that solar battery sheet immerses in etching liquid by the silicon that forms metallic particles on surface, obtaining silicon as claimed in claim 8 is solar cell.
10. the preparation method that a kind of silicon according to claim 9 is solar cell, is characterized in that, metallic particles is gold, silver, copper, aluminium, platinum or palladium; The molar concentration of metal salt solution is: 0.001mol/L-1mol/L, and reductant solution molar concentration is 0.0001mol/L-0.1mol/L; Metal salt solution is 1:(1～1000 with the volume ratio of corresponding reductant solution).
The preparation method that 11. a kind of silicon according to claim 9 are solar cell, is characterized in that, described etching liquid adopts the mixed solution of aqueous oxidizing agent solution and hydrofluoric acid.
The preparation method that 12. a kind of silicon according to claim 11 are solar cell, is characterized in that, aqueous oxidizing agent solution is hydrogen peroxide, Na
2s
2o
8the aqueous solution, KMnO
4the aqueous solution, K
2cr
2o
7the aqueous solution, Fe (NO
3)
3the aqueous solution, Ni (NO
3)
2the aqueous solution, Mg (NO
3)
2the aqueous solution or nitric acid.
13. is the preparation method of solar cell according to a kind of silicon described in claim 11 or 12, it is characterized in that, the volume ratio of aqueous oxidizing agent solution and hydrofluoric acid is 1:(1～100), the molar concentration of hydrofluoric acid is 0.01～20mol/L, and the molar concentration of oxidant is 0.001～5mol/L.
14. 1 kinds of silicon are the preparation facilities of solar cell, it is characterized in that, comprise for heating the heater that silicon is solar battery sheet (6) (4), with be the spray equipment (5) on solar battery sheet for reaction solution described in claim 6 or 7 being sprayed to heated silicon, and for holding the storing apparatus of etching liquid as described in claim 9,11,12 or 13.
The preparation facilities that 15. a kind of silicon according to claim 14 are solar cell, is characterized in that, described heater (4) is that to be heated to temperature be 30-500 DEG C to solar battery sheet by silicon.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103700A (en) * | 2014-07-23 | 2014-10-15 | 陕西师范大学 | Silicon solar battery and manufacture method and device thereof |
| CN107046066A (en) * | 2017-03-09 | 2017-08-15 | 深圳大学 | With suede structure monocrystalline silicon piece and preparation method thereof and silicon solar cell |
| CN107887458A (en) * | 2017-10-11 | 2018-04-06 | 昆明理工大学 | A kind of method that copper catalysis etching silicon prepares morphology controllable matte |
| CN107946386A (en) * | 2017-12-01 | 2018-04-20 | 浙江晶科能源有限公司 | A kind of matte preparation method of black silion cell |
| CN113512229A (en) * | 2021-07-02 | 2021-10-19 | 中国科学院重庆绿色智能技术研究院 | Micro-nano porous light trapping structure and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100065117A1 (en) * | 2008-09-16 | 2010-03-18 | Jinsung Kim | Solar cell and texturing method thereof |
| CN102102227A (en) * | 2010-11-18 | 2011-06-22 | 华北电力大学 | Preparation method of hydrophobic light trapping structure on silicon surface |
| JP2011222589A (en) * | 2010-04-05 | 2011-11-04 | Mitsubishi Electric Corp | Photovoltaic device and manufacturing method thereof |
| CN102332477A (en) * | 2011-07-27 | 2012-01-25 | 常州时创能源科技有限公司 | Light trapping structure for monocrystalline silicon solar cell |
| CN102553791A (en) * | 2010-12-24 | 2012-07-11 | 无锡尚德太阳能电力有限公司 | Surface treatment method and device for solar cell assembly back plate |
| CN102983212A (en) * | 2012-11-06 | 2013-03-20 | 华南师范大学 | Preparation method for crystalline silicon solar cell nanometer transparent buried gate electrode |
| KR20130102902A (en) * | 2012-03-08 | 2013-09-23 | 한국과학기술원 | Solar cell and method of fabricating the same |
| CN103456804A (en) * | 2013-09-24 | 2013-12-18 | 上海大学 | Method for forming inverted-pyramid porous surface nanometer texture on polycrystalline silicon and method for manufacturing short-wave reinforcing solar cell |
-
2014
- 2014-04-30 CN CN201410182303.XA patent/CN103928542B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100065117A1 (en) * | 2008-09-16 | 2010-03-18 | Jinsung Kim | Solar cell and texturing method thereof |
| JP2011222589A (en) * | 2010-04-05 | 2011-11-04 | Mitsubishi Electric Corp | Photovoltaic device and manufacturing method thereof |
| CN102102227A (en) * | 2010-11-18 | 2011-06-22 | 华北电力大学 | Preparation method of hydrophobic light trapping structure on silicon surface |
| CN102553791A (en) * | 2010-12-24 | 2012-07-11 | 无锡尚德太阳能电力有限公司 | Surface treatment method and device for solar cell assembly back plate |
| CN102332477A (en) * | 2011-07-27 | 2012-01-25 | 常州时创能源科技有限公司 | Light trapping structure for monocrystalline silicon solar cell |
| KR20130102902A (en) * | 2012-03-08 | 2013-09-23 | 한국과학기술원 | Solar cell and method of fabricating the same |
| CN102983212A (en) * | 2012-11-06 | 2013-03-20 | 华南师范大学 | Preparation method for crystalline silicon solar cell nanometer transparent buried gate electrode |
| CN103456804A (en) * | 2013-09-24 | 2013-12-18 | 上海大学 | Method for forming inverted-pyramid porous surface nanometer texture on polycrystalline silicon and method for manufacturing short-wave reinforcing solar cell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103700A (en) * | 2014-07-23 | 2014-10-15 | 陕西师范大学 | Silicon solar battery and manufacture method and device thereof |
| CN107046066A (en) * | 2017-03-09 | 2017-08-15 | 深圳大学 | With suede structure monocrystalline silicon piece and preparation method thereof and silicon solar cell |
| CN107887458A (en) * | 2017-10-11 | 2018-04-06 | 昆明理工大学 | A kind of method that copper catalysis etching silicon prepares morphology controllable matte |
| CN107946386A (en) * | 2017-12-01 | 2018-04-20 | 浙江晶科能源有限公司 | A kind of matte preparation method of black silion cell |
| CN113512229A (en) * | 2021-07-02 | 2021-10-19 | 中国科学院重庆绿色智能技术研究院 | Micro-nano porous light trapping structure and preparation method thereof |
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