CN107039383A - 一种结构改良的串联式二极管 - Google Patents

一种结构改良的串联式二极管 Download PDF

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CN107039383A
CN107039383A CN201710280684.9A CN201710280684A CN107039383A CN 107039383 A CN107039383 A CN 107039383A CN 201710280684 A CN201710280684 A CN 201710280684A CN 107039383 A CN107039383 A CN 107039383A
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backlight unit
diode chip
conducting connecting
connecting part
conductive metal
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CN107039383B (zh
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崔华生
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SHENZHEN GOODPAL ELECTRONIC TECHNOLOGY Co Ltd
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SHENZHEN GOODPAL ELECTRONIC TECHNOLOGY Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种结构改良的串联式二极管,包括若干导电连接件、若干二极管芯片和电极引线,电极引线焊接固定在导电连接件上,导电连接件由两个圆形的导电金属片和若干导电柱组成,导电柱的两端通过点焊分别和两个导电金属片固定连接;二极管芯片的两端固定有电极层,二极管芯片的两端通过点焊均固定有导电金属片;电极引线、二极管芯片和导电连接件封塑在环氧树脂管,同一所述的导电连接件的导电金属片之间填充有环氧树脂。本发明整改了二极管芯片之间导电连接件的结构,采用点焊方式能方便快捷的实现二极管芯片与导电连接件的固定连接,为串联式二极管芯片的组装工作带了便利。

Description

一种结构改良的串联式二极管
技术领域:
本发明涉及二极管的技术领域,更具体地说涉及一种结构改良的串联式二极管。
背景技术:
一般公知,二极管作为结构最简单的半导体器件在电子领域有着广泛的应用。典型地,半导体二极管是由一个PN结所构成的器件,其P端引出线为正极,N端引出线为负极。现有的一些二极管芯片之间通过焊接方式焊接在金属片实现并列时串联,然后在封装在到绝缘包覆体内,但其存在不便之处:1、二极管芯片分布在同一金属片的两侧,焊接不方便;2、其金属片为增加附着力,一般会在其边缘开槽,但金属片较薄,开槽不仅不便,而且容易破坏金属片的强度。
发明内容:
本发明的目的就是针对现有技术之不足,而提供了一种结构改良的串联式二极管,其整改了二极管芯片之间导电连接件的结构,方便导电连接件与二极管芯片的焊接工作。
为实现上述目的,本发明采用的技术方案如下:
一种结构改良的串联式二极管,包括若干导电连接件、若干二极管芯片和电极引线,电极引线焊接固定在导电连接件上,导电连接件由两个圆形的导电金属片和若干导电柱组成,导电柱的两端通过点焊分别和两个导电金属片固定连接;二极管芯片的两端固定有电极层,二极管芯片的两端通过点焊均固定有导电金属片;电极引线、二极管芯片和导电连接件封塑在环氧树脂管,同一所述的导电连接件的导电金属片之间填充有环氧树脂。
所述电极引线的端部露出环氧树脂管。
所述的二极管芯片由N掺杂层、P掺杂层和电极层组成,二极管芯片分布在导电金属片的中心,导电柱分布在二极管芯片的四周并绕导电金属片的中心呈环形均匀分布,导电柱的个数至少设有三个。
所述环氧树脂管的外侧涂覆有涂层。
本发明的有益效果在于:
1、它整改了二极管芯片之间导电连接件的结构,采用点焊方式能方便快捷的实现二极管芯片与导电连接件的固定连接,为串联式二极管芯片的组装工作带了便利。
2、它采用的导电连接件无需在切槽加工,不会破坏其强度,同时在环氧树脂管的辅助力大。
附图说明:
图1为本发明的结构示意图;
图2为图1中A—A的剖视结构示意图。
图中:1、导电连接件;11、导电金属片;12、导电柱;2、晶体管;21、N掺杂层;22、P掺杂层;23、电极层;3、电极引线;4、环氧树脂管;5、涂层。
具体实施方式:
实施例:见图1、2所示,一种结构改良的串联式二极管,包括若干导电连接件1、若干二极管芯片2和电极引线3,电极引线3焊接固定在导电连接件1上,导电连接件1由两个圆形的导电金属片11和若干导电柱12组成,导电柱12的两端通过点焊分别和两个导电金属片11固定连接;二极管芯片2的两端固定有电极层23,二极管芯片2的两端通过点焊均固定有导电金属片11;电极引线3、二极管芯片2和导电连接件1封塑在环氧树脂管4,同一所述的导电连接件1的导电金属片11之间填充有环氧树脂。
所述电极引线3的端部露出环氧树脂管4。
所述的二极管芯片2由N掺杂层21、P掺杂层21和电极层23组成,二极管芯片2分布在导电金属片11的中心,导电柱12分布在二极管芯片2的四周并绕导电金属片11的中心呈环形均匀分布,导电柱12的个数至少设有三个。
所述环氧树脂管4的外侧涂覆有涂层5,涂层5能显示二极管工作参数。
工作原理:本发明为结构改良的串联式二极管,主要整改在于其导电连接件1,其导电连接件1由两个导电金属片11和若干导电柱11组成,则可以采用点焊方式先实现导电金属片11与晶体管2之间的固定,然后在固定同一个导电连接件1,从而方便了焊接工作,同时其环氧树脂可以填充到同一个导电连接件1的两个导电金属片11之间,其导电连接件1在环氧树脂管4的辅助力大。

Claims (4)

1.一种结构改良的串联式二极管,包括若干导电连接件(1)、若干二极管芯片(2)和电极引线(3),电极引线(3)焊接固定在导电连接件(1)上,其特征在于:导电连接件(1)由两个圆形的导电金属片(11)和若干导电柱(12)组成,导电柱(12)的两端通过点焊分别和两个导电金属片(11)固定连接;二极管芯片(2)的两端固定有电极层(23),二极管芯片(2)的两端通过点焊均固定有导电金属片(11);电极引线(3)、二极管芯片(2)和导电连接件(1)封塑在环氧树脂管(4),同一所述的导电连接件(1)的导电金属片(11)之间填充有环氧树脂。
2.根据权利要求1所述的一种结构改良的串联式二极管,其特征在于:所述电极引线(3)的端部露出环氧树脂管(4)。
3.根据权利要求1所述的一种结构改良的串联式二极管,其特征在于:所述的二极管芯片(2)由N掺杂层(21)、P掺杂层(21)和电极层(23)组成,二极管芯片(2)分布在导电金属片(11)的中心,导电柱(12)分布在二极管芯片(2)的四周并绕导电金属片(11)的中心呈环形均匀分布,导电柱(12)的个数至少设有三个。
4.根据权利要求1所述的一种结构改良的串联式二极管,其特征在于:所述环氧树脂管(4)的外侧涂覆有涂层(5)。
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* Cited by examiner, † Cited by third party
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JPH06224454A (ja) * 1993-01-22 1994-08-12 Fuji Electric Co Ltd 高圧半導体整流素子
US20070020916A1 (en) * 2005-07-19 2007-01-25 Farnworth Warren M Methods for forming flexible column die interconnects and resulting structures
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CN201994648U (zh) * 2010-09-25 2011-09-28 浙江东冠通信技术股份有限公司 Vdsl型固体保安模块
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US20150287688A1 (en) * 2012-11-08 2015-10-08 Nantong Fujitsu Microelectronics Co., Ltd. Semiconductor device and manufacturing method thereof
CN205050822U (zh) * 2015-10-29 2016-02-24 青岛海智半导体有限公司 一种二极管
CN206806325U (zh) * 2017-04-26 2017-12-26 东莞市柏尔电子科技有限公司 一种结构改良的串联式二极管

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224454A (ja) * 1993-01-22 1994-08-12 Fuji Electric Co Ltd 高圧半導体整流素子
US20070020916A1 (en) * 2005-07-19 2007-01-25 Farnworth Warren M Methods for forming flexible column die interconnects and resulting structures
US20090283903A1 (en) * 2005-12-02 2009-11-19 Nepes Corporation Bump with multiple vias for semiconductor package and fabrication method thereof, and semiconductor package utilizing the same
CN101630677A (zh) * 2009-08-11 2010-01-20 常州佳讯光电产业发展有限公司 高频快恢复二极管
CN201994648U (zh) * 2010-09-25 2011-09-28 浙江东冠通信技术股份有限公司 Vdsl型固体保安模块
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CN206806325U (zh) * 2017-04-26 2017-12-26 东莞市柏尔电子科技有限公司 一种结构改良的串联式二极管

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