CN205050822U - 一种二极管 - Google Patents
一种二极管 Download PDFInfo
- Publication number
- CN205050822U CN205050822U CN201520856331.5U CN201520856331U CN205050822U CN 205050822 U CN205050822 U CN 205050822U CN 201520856331 U CN201520856331 U CN 201520856331U CN 205050822 U CN205050822 U CN 205050822U
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- CN
- China
- Prior art keywords
- commutator
- rectification
- subgroup
- shot copper
- adjacent
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052802 copper Inorganic materials 0.000 claims abstract description 34
- 239000010949 copper Substances 0.000 claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000005476 soldering Methods 0.000 abstract 1
- 101001031591 Mus musculus Heart- and neural crest derivatives-expressed protein 2 Proteins 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- Motor Or Generator Current Collectors (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520856331.5U CN205050822U (zh) | 2015-10-29 | 2015-10-29 | 一种二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201520856331.5U CN205050822U (zh) | 2015-10-29 | 2015-10-29 | 一种二极管 |
Publications (1)
Publication Number | Publication Date |
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CN205050822U true CN205050822U (zh) | 2016-02-24 |
Family
ID=55344370
Family Applications (1)
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CN201520856331.5U Expired - Fee Related CN205050822U (zh) | 2015-10-29 | 2015-10-29 | 一种二极管 |
Country Status (1)
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CN (1) | CN205050822U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107039383A (zh) * | 2017-04-26 | 2017-08-11 | 东莞市柏尔电子科技有限公司 | 一种结构改良的串联式二极管 |
-
2015
- 2015-10-29 CN CN201520856331.5U patent/CN205050822U/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107039383A (zh) * | 2017-04-26 | 2017-08-11 | 东莞市柏尔电子科技有限公司 | 一种结构改良的串联式二极管 |
CN107039383B (zh) * | 2017-04-26 | 2023-08-04 | 东莞市柏尔电子科技有限公司 | 一种结构改良的串联式二极管 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Inhibition method for diode reverse recovery current and its circuit Effective date of registration: 20161207 Granted publication date: 20160224 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO HAIZHI SEMICONDUCTOR CO., LTD. Registration number: 2016990001086 |
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Date of cancellation: 20171012 Granted publication date: 20160224 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO HAIZHI SEMICONDUCTOR CO., LTD. Registration number: 2016990001086 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Inhibition method for diode reverse recovery current and its circuit Effective date of registration: 20171031 Granted publication date: 20160224 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO HAIZHI SEMICONDUCTOR CO., LTD. Registration number: 2017370010070 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20181015 Granted publication date: 20160224 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO HAIZHI SEMICONDUCTOR CO., LTD. Registration number: 2017370010070 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181130 Address after: 256300 221 the Yellow River Road, Tian Zhen Street, Gaoqing County, Zibo, Shandong Patentee after: Shandong Bao Cheng Electronics Co., Ltd. Address before: 266000 Shandong, Qingdao, Laixi, Jiangshan Town, Yang Shan Road, three East Road 100 meters south Patentee before: QINGDAO HAIZHI SEMICONDUCTOR CO., LTD. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160224 Termination date: 20191029 |
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CF01 | Termination of patent right due to non-payment of annual fee |