CN202120903U - 一种半桥功率模块 - Google Patents

一种半桥功率模块 Download PDF

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CN202120903U
CN202120903U CN2011201674075U CN201120167407U CN202120903U CN 202120903 U CN202120903 U CN 202120903U CN 2011201674075 U CN2011201674075 U CN 2011201674075U CN 201120167407 U CN201120167407 U CN 201120167407U CN 202120903 U CN202120903 U CN 202120903U
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power terminal
power
bridge
pin
insulated substrate
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金晓行
刘志宏
吕镇
姬凤燕
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STARPOWER SEMICONDUCTOR LTD.
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STARPOWER SEMICONDUCTOR Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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Abstract

本实用新型公开了一种大功率的半桥功率模块，它包括散热基板、绝缘基板和功率端子，散热基板上至少包含三块绝缘基板，功率端子包括第一功率端子、第二功率端子和第三功率端子，第一功率端子、第二功率端子和第三功率端子平行排列构成半桥结构，第一功率端子、第二功率端子和第三功率端子的一端均与所述的三块绝缘基板连接，第二功率端子与第三功率端子之间有一定的绝缘间距。本实用新型具有功率高、效率高、生产成本低和可靠性好的特点。

Description

一种半桥功率模块
技术领域
本实用新型涉及一种功率模块组件，具体的说是一种半桥功率模块。
背景技术
功率模块IGBT(绝缘栅极双极晶体管)模块广泛用于变频器、焊机、UPS、太阳能和风能领域。在传统的大功率模块封装中，为了达到高可靠性，需要回流焊接功率端子，信号走线需要绕线，需要灌环氧树脂。但这种功率模块，存在工艺较复杂，生产成本较高的缺点。
发明内容
本实用新型的目的是设计出一种大功率的半桥功率模块。
本实用新型要解决的是现有功率模块存在的生产工艺较复杂，生产成本较高的问题。
为实现本实用新型的目的，本实用新型采用的技术方案是：
它包括散热基板、绝缘基板和功率端子，散热基板上至少包含三块绝缘基板，功率端子包括第一功率端子、第二功率端子和第三功率端子，第一功率端子、第二功率端子和第三功率端子平行排列构成半桥结构，第一功率端子、第二功率端子和第三功率端子的一端均与所述的三块绝缘基板连接，第二功率端子与第三功率端子之间设有一定的绝缘间距。
本实用新型的优点是：一是功率高、效率高、生产成本低和可靠性好。二是本实用新型提供了一种简单和经济的电流动态分配非常对称的半桥模块。
附图说明
图1为本实用新型的结构示意图。
图2为本实用新型的电路拓扑结构图。
具体实施方式
下面结合附图及具体实施例对本实用新型作进一步的说明。
如图所示，本实用新型包括散热基板2、散热基板2上至少包括三块绝缘基板和三个功率端子。所述的该三块绝缘基板包括绝缘基板5、绝缘基板7、绝缘基板9。所述的三个功率端子包括第一功率端子20、第二功率端子1和第三功率端子18。第一功率端子20、第二功率端子1和第三功率端子18平行排列构成半桥电结构。第一功率端子20、第二功率端子1和第三功率端子18的一端均与所述的绝缘基板5、绝缘基板7、绝缘基板9。第二功率端子1与第三功率端子18之间有绝缘间距。绝缘基板9上设有IGBT芯片13和二极管芯片14。
第一功率端子20上设有三个引脚，第一功率端子通过该三个引脚，分别为引脚16、引脚17、引脚19，引脚19、引脚17、引脚16分别与绝缘基板5、绝缘基板7、绝缘基板9连接。
第二功率端子1上设有三个引脚，分别为引脚10、引脚6、引脚3，引脚3、引脚6、引脚10分别与绝缘基板5、绝缘基板7、绝缘基板9连接。第二功率端子通过该三个引脚，分别与三块绝缘基板连接。
第三功率端子18上设有三个引脚，分别为引脚11、引脚8、引脚4，引脚4、引脚8、引脚11分别与绝缘基板5、绝缘基板7、绝缘基板9连接。
绝缘基板5、绝缘基板7、绝缘基板9并排分布于散热基板2上。
绝缘基板5、绝缘基板7、绝缘基板9用陶瓷材料制成。
散热基板2是为平的散热基板，用铜或AiSiC或CuSiC制成。散热基板的厚度是3mm-5mm。
所述的绝缘基板5、绝缘基板7、绝缘基板9和第一功率端子20、第二功率端子1和第三功率端子18的连接为软铅焊接，或是超声波键合。
绝缘基板5、绝缘基板7、绝缘基板9两侧覆铜，厚度0.1-0.3mm之间。
本实用新型所述的第二功率端子1与第三功率端子18中，其中一个是低电位，另一个是高电位。
本实用新型的功率端子一端连接绝缘基板，另一端引出连接外部母线。
现具体说明本实用新型的组装方式：
首先把IGBT芯片13和二极管芯片14粘结到绝缘基板9上，粘结方式可以是回流软钎焊接，或扩散焊接，或银粉压接。然后把IGBT芯片13、二极管芯片14和绝缘基板9之间用键合铝线15、键合铝线12连接起来。 再把绝缘基板9、绝缘基板5、绝缘基板7粘结到散热基板2上，最后使用超声波键合的方式分别把第一功率端子20、第二功率端子1、第三功率端子18的引脚16、引脚17、引脚19、引脚10、引脚6、引脚3、引脚11、引脚8、引脚4分别连接到绝缘基板9、绝缘基板5、绝缘基板7上。
图2是图1的电路拓扑结构图。图2中的40、30、20分别对应图1中的第三功率端子18、第一功率端子20和第二功率端子1。图1中的引脚4、引脚8、引脚11；引脚16、引脚17、引脚19；引脚3、引脚3、引脚10分别对应图2的41、42、43；31、32、33；21，22，23。

Claims (9)

1.一种半桥功率模块，包括散热基板、绝缘基板和功率端子，其特征在于在散热基板上至少包含三块绝缘基板，功率端子包括第一功率端子、第二功率端子和第三功率端子；第一功率端子、第二功率端子和第三功率端子平行排列构成半桥结构；第一功率端子、第二功率端子和第三功率端子的一端均与所述的三块绝缘基板连接，第二功率端子与第三功率端子之间设有间距。
2.根据权利要求1所述的一种半桥功率模块，其特征在于第一功率端子上设有三个引脚，第一功率端子通过该三个引脚分别与三块绝缘基板连接。
3.根据权利要求1所述的一种半桥功率模块，其特征在于第二功率端子上设有三个引脚，第二功率端子通过该三个引脚分别与三块绝缘基板连接。
4.根据权利要求1所述的一种半桥功率模块，其特征在于第三功率端子上设有三个引脚，第三功率端子通过该三个引脚分别与三块绝缘基板连接。
5.根据权利要求1所述的一种半桥功率模块，其特征在于三块绝缘基板并排分布于散热基板上。
6.根据权利要求1所述的一种半桥功率模块，其特征在于绝缘基板用陶瓷材料制成。
7.根据权利要求1所述的一种半桥功率模块，其特征在于散热基板是为平的散热基板，用铜或AiSiC或CuSiC制成。
8.根据权利要求1所述的一种半桥功率模块，其特征在于散热基板的厚度是3mm-5mm。
9.根据权利要求1所述的一种半桥功率模块，其特征在于绝缘基板两侧覆铜，厚度0.1-0.3mm之间。
CN2011201674075U 2011-05-24 2011-05-24 一种半桥功率模块 Expired - Lifetime CN202120903U (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102208403A (zh) * 2011-05-24 2011-10-05 嘉兴斯达半导体有限公司 一种半桥功率模块
CN103779341A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种大功率半桥模块
CN103780066A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种四象限绝缘栅双极性晶体管模块

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102208403A (zh) * 2011-05-24 2011-10-05 嘉兴斯达半导体有限公司 一种半桥功率模块
CN103779341A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种大功率半桥模块
CN103780066A (zh) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 一种四象限绝缘栅双极性晶体管模块
CN103779341B (zh) * 2014-01-24 2016-07-27 嘉兴斯达微电子有限公司 一种大功率半桥模块
CN103780066B (zh) * 2014-01-24 2017-05-03 嘉兴斯达微电子有限公司 一种四象限绝缘栅双极性晶体管模块

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