CN1070279A - 掩膜只读存储器 - Google Patents

掩膜只读存储器 Download PDF

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Publication number
CN1070279A
CN1070279A CN92109280A CN92109280A CN1070279A CN 1070279 A CN1070279 A CN 1070279A CN 92109280 A CN92109280 A CN 92109280A CN 92109280 A CN92109280 A CN 92109280A CN 1070279 A CN1070279 A CN 1070279A
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CN
China
Prior art keywords
diffusion region
word line
bit line
mask rom
isolated area
Prior art date
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Pending
Application number
CN92109280A
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English (en)
Inventor
赵星熙
李炯坤
崔正达
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1070279A publication Critical patent/CN1070279A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

一种在半导体存储器中的掩膜只读存储器有：一 给定导电类型的扩散区在第一方向上延伸并以隔离 区与另一扩散区隔开；一字线在和第一方向垂直的第 二方向上延伸，且和另一字线平行；一位线沿第一方 向在一区域里延伸，该区域在字线布线上方形成并对 应于扩散区之间的隔离区，该位线通过给定的接触区 和字线接触。因位线和扩散区隔开一给定间隔，故周 转时间(TAT)可以大大降低。

Description

本发明涉及半导体存储器，更具体地说，本发明涉及掩膜只读存储器。
通常使用在金属刻馈后将数据编程的方法，以降低掩膜只读存储器（以下称为掩膜ROM）的周转时间（Turn    Around    Time，TAT）。
图1是一布局图，说明常规NAND（与非）型掩膜ROM，其中有多个MOS晶体管串联连接。扩散区3与另一扩散区由一从场氧化层制得的隔离区1相隔开，这两扩散区在第一方向上互相平行，隔离区1则在第一方向上延伸。多晶硅层的字线5沿一与第一方向成直角的第二方向延伸，并平行于另一字线。金属层的位线11和13在隔离区1和与它相邻的隔离区3的上方沿第一方向延伸，并通过第一和第二接触区7和9与字线5相接触。字线5和与之相邻的扩散区3组成一编程区15，编程区15的杂质是在给定数据编入掩膜ROM时注入的。
在这种情况下，将数据编程时，不论它是在组成字线的多晶硅层形成之前，或是在高浓度的n型（或p型）扩散区形成之后，都可以将所需数据编程。然而，在通过一光刻工序刻制金属层以形成位线之后编程数据的情况下，杂质可能不能通过与位线重叠的区域和该扩散区。因此，所需数据不能编入一编程区。
因此，本发明的一个目的是要提供一种掩膜ROM，这种掩膜ROM即使形成位线后也能编程数据。
根据本发明的一个设计方案，位线只形成在扩散区之间的隔离区上。
为了更全面地理解本发明，应连同附图阅读下面的详细说明，附图中：
图1是常用的掩膜ROM的布局草图;及
图2是体现本发明的一例掩膜ROM的布局草图。
现参看图2，一扩散区23与另一扩散区23平行且在第一方向上延伸，并由一用场氧化层形成的隔离区21与另一扩散区相隔开，该隔离区21在第一方向上延伸。多晶硅层的字线25在与第一方向成直角的第二方向上延伸，且平行于另一条字线。金属层的位线31和33在对应于隔离区21的区域里沿第一方向上延伸，该区域在字线布线的上方，并通过第一和第二接触区27和29与字线25接触。
字线25和与它相邻的扩散区23组成一编程区35，在掩膜ROM中编程数据时将杂质注入该编程区。此外，由于位线与该扩散区隔开一已知间隔，用以编程数据的杂质就被注入字线的底部。
如上所述，在一掩膜ROM中，借助于在隔离区上部的上方不重叠扩散区而形成位线，可以容易地在编程区中编程所需数据。因此，可以大大降低存储器装置的TAT。此外，由于位线间的间隔扩大了，位线之间的电容也可以减少。
尽管这里具体指出了和叙述了本发明的最佳实施例，本领域的技术人员可以理解在不偏离本发明精神和范围内可以作出上述的形式上和细节上的改变。

Claims (1)

1、一种掩膜只读存储器，其特征在于，它包括：
一给定导电类型的扩散区，该扩散区在第一方向延伸，并以一隔离区与另一扩散区隔开；
一字线在垂直于所说方向的第二方向上延伸，并和相隔开的另一字线平行；以及
一位线，沿所说第一方向上在和所说隔离区相对应的区域里延伸，并通过一给定的接触区和所说字线接触，所说区域位于该字线布线的上方。
CN92109280A 1991-09-04 1992-08-10 掩膜只读存储器 Pending CN1070279A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR15427/91 1991-09-04
KR1019910015427A KR940004609B1 (ko) 1991-09-04 1991-09-04 마스크 리드 온리 메모리

Publications (1)

Publication Number Publication Date
CN1070279A true CN1070279A (zh) 1993-03-24

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ID=19319567

Family Applications (1)

Application Number Title Priority Date Filing Date
CN92109280A Pending CN1070279A (zh) 1991-09-04 1992-08-10 掩膜只读存储器

Country Status (7)

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KR (1) KR940004609B1 (zh)
CN (1) CN1070279A (zh)
DE (1) DE4226421A1 (zh)
FR (1) FR2680908A1 (zh)
GB (1) GB2259405A (zh)
IT (1) IT1261716B (zh)
TW (1) TW222341B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100343920C (zh) * 2004-07-14 2007-10-17 义隆电子股份有限公司 适用字符线金属导线技术的平面单元只读存储器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
KR100446603B1 (ko) * 1997-12-12 2004-11-03 삼성전자주식회사 강유전성액정화합물,이를포함한액정조성물및이를채용한액정표시소자
DE10254155B4 (de) 2002-11-20 2010-12-09 Infineon Technologies Ag Maskenprogrammierbares ROM-Bauelement
US7953595B2 (en) 2006-10-18 2011-05-31 Polycom, Inc. Dual-transform coding of audio signals

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156993A (en) * 1980-05-08 1981-12-03 Fujitsu Ltd Read only memory
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
JPS6329579A (ja) * 1986-07-23 1988-02-08 Hitachi Ltd 縦型ｒｏｍ
IT1217403B (it) * 1988-04-12 1990-03-22 Sgs Thomson Microelectronics Matrice di memoria a tovaglia con celle eprom sfalsate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100343920C (zh) * 2004-07-14 2007-10-17 义隆电子股份有限公司 适用字符线金属导线技术的平面单元只读存储器

Also Published As

Publication number Publication date
ITMI921962A0 (it) 1992-08-07
ITMI921962A1 (it) 1993-03-05
KR930006951A (ko) 1993-04-22
DE4226421A1 (de) 1993-03-18
GB9216801D0 (en) 1992-09-23
FR2680908A1 (fr) 1993-03-05
IT1261716B (it) 1996-05-30
GB2259405A (en) 1993-03-10
TW222341B (zh) 1994-04-11
KR940004609B1 (ko) 1994-05-25

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