CN107017227B - 半导体装置、膜堆叠体以及其制造方法 - Google Patents
半导体装置、膜堆叠体以及其制造方法 Download PDFInfo
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- CN107017227B CN107017227B CN201611257099.9A CN201611257099A CN107017227B CN 107017227 B CN107017227 B CN 107017227B CN 201611257099 A CN201611257099 A CN 201611257099A CN 107017227 B CN107017227 B CN 107017227B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 278
- 239000002184 metal Substances 0.000 claims abstract description 261
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims description 39
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 23
- 229910052715 tantalum Inorganic materials 0.000 claims description 23
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 23
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 131
- 239000002131 composite material Substances 0.000 description 102
- 239000002245 particle Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 7
- 206010040844 Skin exfoliation Diseases 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Abstract
本揭露实施例提供一种半导体装置、膜堆叠体以及其制造方法。所述膜堆叠体包含多个第一含金属膜,以及多个第二含金属膜。所述第一含金属膜与所述第二含金属膜彼此交替堆叠。所述第一含金属膜以及所述第二含金属膜包括相同金属元素以及相同非金属元素,以及在所述第二含金属膜中所述金属元素的浓度大于在所述第二含金属膜中所述非金属元素的浓度。
Description
技术领域
本揭露实施例涉及一种半导体装置、一种膜堆叠体以及其制造方法。
背景技术
氮化钽(TaN)膜已广泛使用在半导体工业中,此是由于它的抗扩散以及抗腐蚀能力。然而,氮化钽膜的本质上大的压缩应力以及易脆性质导致剥离问题以及粒子议题,其需要被解决。
发明内容
在示范性方面中,提供了一种半导体装置。所述半导体装置包含第一导电层、第二导电层、阻障层、以及多层膜。所述第一导电层在衬底上方。所述第二导电层在所述第一导电层上方且电连接到所述第一导电层。所述阻障层是在所述第一导电层与所述第二导电层之间。所述多层膜围住所述第二导电层的侧壁,其中所述多层膜包括多个彼此交替布置的第一含金属膜与第二含金属膜。所述第一含金属膜以及所述第二含金属膜包括相同金属元素,以及在所述第二含金属膜中所述金属元素的浓度高于在所述第一含金属膜中所具者。
在另一示范性方面中,提供了一种膜堆叠体。所述膜堆叠体包含多个第一含金属膜,以及多个第二含金属膜。所述第一含金属膜与所述第二含金属膜彼此交替堆叠。所述第一含金属膜以及所述第二含金属膜包括相同金属元素以及相同非金属元素,以及在所述第二含金属膜中所述金属元素的浓度是大于50%。
在又另一方面中,提供了一种用于形成膜堆叠体在衬底上的方法。所述方法包含下列操作。(a)形成第一含金属膜在所述衬底上方。(b)形成第二含金属膜在所述第一含金属膜上方,其中所述第一含金属膜以及所述第二含金属膜包括相同金属元素,以及在所述第二含金属膜中所述金属元素的浓度高于在所述第一含金属膜中所具者。(c)重复操作(a)及(b)而形成所述第一含金属膜与所述第二含金属膜交替布置的膜堆叠体,直到达到所述膜堆叠体的所要厚度。
附图说明
本揭露实施例的方面将在与随附图式一同阅读下列详细说明下被最好地理解。请注意根据业界标准作法,各种结构未依比例绘制。事实上,为了使讨论内容清楚,各种结构的尺寸可刻意放大或缩小。
图1是根据本揭露的一些实施例绘示用于形成膜堆叠体在衬底上的方法的流程图。
图2是根据本揭露的一些示范性实施例绘示用于形成膜堆叠体在衬底上的方法的流程图。
图3是根据本揭露的一些示范性实施例绘示用于形成膜堆叠体在衬底上的方法的流程图。
图4A是根据本揭露的一些实施例绘示氮化钽层与富含钽的氮化钽层的膜堆叠体的能量散布波谱(energy dispersive spectroscopy,EDS)。
图4B是根据本揭露的一些其它实施例绘示氮化钽层与富含钽的氮化钽层的一膜堆叠体的EDS。
图5A是绘示形成在衬底上方的金属-非金属复合膜的示意图。
图5B是绘示形成在衬底上的金属-非金属复合膜与富含金属的金属-非金属复合膜的膜堆叠体的示意图。
图6是根据本揭露的一些实施例绘示半导体装置的示意图。
图7是根据本揭露的一些实施例绘示半导体装置的示意图。
图8是根据本揭露的一些实施例绘示半导体装置的示意图。
图9是根据本揭露的一些实施例绘示半导体装置的示意图。
图10是根据本揭露的一些实施例绘示半导体装置的示意图。
具体实施方式
下列揭露实施例提供许多用于实施所提供目标的不同特征的不同实施例或实例。为了简化本揭露实施例,于下描述组件及布置的具体实例。当然这些仅为实例而非意图为限制性。例如,在下面说明中,形成一第一特征在一第二特征上方或上可包含其中所述第一及第二特征是经形成为直接接触的实施例,以及也可包含其中额外特征可形成在所述第一与第二特征之间而使得所述第一及第二特征不可直接接触的实施例。此外,本揭露实施例可重复参考编号及/或字母于各种实例中。此重复是为了简单与清楚的目的且其本身并不决定所讨论的各种实施例及/或构形之间的关系。
再者,空间相关词汇,例如“于…之下(beneath)”、“下面(below)”、“下(lower)”、“上面(above)”、“上(upper)”、“在…上(on)”和类似词汇,可能是为了使说明书便于描述如图式绘示的一个组件或特征与另一个(或多个)组件或特征的相对关系而使用于本文中。除了图式中所画的方位外,这些空间相对词汇也意图用来涵盖装置在使用中或操作时的不同方位。所述设备可以其它方式定向(旋转90度或于其它方位),据此在本文中所使用的这些空间相关说明符可以类似方式加以解释。
如本文中所使用者,词汇例如“第一”以及“第二”描述各种组件、组件、区、层及/或区段,但这些组件、组件、区、层及/或区段应不限于这些词汇。这些词汇可仅用于将一个组件、组件、区、层或区段与另一个组件、组件、区、层或区段区别。除非内文中明确指出,否则当于本文中使用词汇例如“第一”以及“第二”时,不意味顺序或次序。
如本文所使用者,词汇“含金属膜(metal-containing film)”是指金属膜、金属-非金属复合膜、合金膜或任何其它包括金属材料的膜。所述第一含金属膜以及所述第二含金属膜包括一(多)相同金属元素,以及在所述第二含金属膜中所述金属元素的所述浓度高于在所述第一含金属膜中所述金属元素的所述浓度。在内文中,词汇“第一含金属膜(firstmetal-containing film)”以及词汇“金属-非金属复合膜(metal-nonmetal compoundfilm)”(或“金属贫乏的金属-非金属复合膜(metal-deficient metal-nonmetal compoundfilm)”可互换使用,以及词汇“第二含金属膜(second metal-containing film)”以及词汇“富含金属的金属-非金属复合膜(metal-deficient metal-nonmetal compound film)”可互换使用。
如本文中所使用者,词汇“富含金属的金属-非金属复合膜”以及“金属-非金属复合膜”被称作两个具有大体上相同的金属以及非金属组分但呈不同比率的金属-非金属复合膜。在一些实施例中,在富含金属的金属-非金属复合膜中金属组分的浓度相对较高于在金属-非金属复合膜中所具者。在一些实施例中,在富含金属的金属-非金属复合膜中金属元素的浓度高于非金属元素的浓度。与富含金属的金属-非金属复合膜相比,金属-非金属复合膜也可称作金属贫乏的金属-非金属复合膜。
在本揭露实施例中,多层膜(也称作膜堆叠体)是通过交替堆叠金属-非金属复合膜与富含金属的金属-非金属(metal-rich metal-nonmetal)复合膜而形成。在一些实施例中,多层膜用以提供粘贴效果,而防止粒子掉落。在一些实施例中,多层膜用以减少应力,而避免剥离。在一些实施例中,多层膜用以减少电阻,而增进电性特性以及改善阻障及保护效果。
图1是根据本揭露的一些实施例绘示用于形成膜堆叠体在衬底上的方法的流程图。方法100开始于操作110,于其中形成第一含金属膜在所述衬底上方。方法100继续为操作120,于其中形成第二含金属膜在所述第一含金属膜上方。所述第一含金属膜以及所述第二含金属膜包括相同金属元素,以及在所述第二含金属膜中所述金属元素的浓度高于在所述第一含金属膜中所具者。方法100接着为操作130,通过重复操作110及120而形成所述第一含金属膜与所述第二含金属膜交替布置的膜堆叠体,直到达到所述膜堆叠体的所要厚度。
方法100仅为实例,且不意图限制本揭露实施例超出权利要求书所明确记载者。额外操作可在方法100之前、期间或之后提供,且为了所述方法的额外实施例可将所述的一些操作置换、排除或搬动。
在一些实施例中,所述第一含金属膜以及所述第二含金属膜包含相同的金属元素以及非金属元素,但却在比例上不同。在所述第二含金属膜中所述金属元素的所述浓度高于在所述第二含金属膜中所述非金属元素的所述浓度。在所述第一含金属膜中所述金属元素的所述浓度大体上等于或小于在所述第一含金属膜中所述非金属元素的所述浓度。在一些实施例中,在所述第二含金属膜中所述金属元素的所述浓度大于50%。在一些实施例中,在所述第二含金属膜中所述金属元素的所述浓度大于55%。在一些实施例中,在所述第二含金属膜中所述金属元素的所述浓度大于60%。在一些实施例中,在所述第二含金属膜中所述金属元素的所述浓度大于75%。在一些实施例中,在所述第一含金属膜中所述金属元素的所述浓度小于或大体上等于50%。
图2是根据本揭露的一些示范性实施例绘示用于形成膜堆叠体在衬底上的方法的流程图。方法200开始于操作210,通过在反应性气体存在下以反应性气体的第一量溅镀金属靶材而形成第一含金属膜在所述衬底上方。方法200接着为操作220,通过在所述反应性气体存在下以小于所述第一量的反应性气体的第二量溅镀所述金属靶材而形成第二含金属膜在所述第一含金属膜上方。方法200接着为操作230,通过重复操作210及220而形成所述第一含金属膜与所述第二含金属膜交替布置的膜堆叠体,直到达到所述膜堆叠体的所要厚度。
在一些实施例中,所述金属-非金属复合膜以及所述富含金属的金属-非金属复合膜是通过但不限于物理气相沉积(physical vapor deposition,PVD),例如溅镀制造。在一些示范性实施例中,所述衬底装载到PVD反应舱中。在操作210中,供给偏压,且在所述反应性气体存在下以反应性气体的第一量溅镀金属靶材而形成所述金属-非金属复合膜。在操作220中,于所述偏压下再次溅镀所述金属靶材,但将具有第二量的所述反应性气体引入到所述反应舱中,所述第二量小于所述第一量。在所述金属-非金属复合膜中或在所述富含金属的金属-非金属复合膜中所述金属元素对所述非金属元素的比率可通过个别控制所述反应性气体的所述量或所述溅镀操作的其它参数调整。在一些示范性实施例中,所述反应性气体的所述量通过控制引入所述反应性气体的持续时间而修改。例如,在操作220中引入所述反应性气体的时间短于在操作210中所用者。在一些实施例中,所述反应性气体的所述量可通过修改其它参数,例如引入到所述反应舱的反应性气体的流速或比例而调整。
方法200仅为实例,且不意图限制本揭露实施例超出权利要求书所明确记载者。额外操作可在方法200之前、期间或之后提供,且为了所述方法的额外实施例可将所述的一些操作置换、排除或搬动。
图3是根据本揭露的一些示范性实施例绘示用于形成膜堆叠体在衬底上的方法的流程图。方法300开始于操作310,通过溅镀金属靶材而形成第一金属膜,以及之后以第一量的反应性气体处理所述第一金属膜而形成所述第一含金属膜。方法300接着为操作320,通过溅镀所述金属靶材而形成第二金属膜在所述第一含金属膜上方,以及之后以小于所述第一量的第二量的所述反应性气体处理所述第二金属膜而形成所述第二含金属膜。方法300接着为操作330,通过重复操作310及320而形成所述第一含金属膜与所述第二含金属膜交替布置的膜堆叠体,直到达到所述膜堆叠体的所要厚度。
方法300仅为实例,且不意图限制本揭露实施例超出权利要求书所明确记载者。额外操作可在方法300之前、期间或之后提供,且为了所述方法的额外实施例可将所述的一些操作置换、排除或搬动。
在一些实施例中,所述金属靶材包括钽靶材,以及所述反应性气体包括氮气。据此,所述金属-非金属复合膜是氮化钽膜,以及所述富含金属的金属-非金属复合膜是富含钽的氮化钽膜。在一些实施例中,所述金属靶材包括钽靶材,以及所述反应性气体包括氧气。据此,所述金属-非金属复合膜是氧化钽膜,以及所述富含金属的金属-非金属复合膜是富含钽的氧化钽膜。在一些其它实施例中,所述金属-非金属复合膜以及所述富含金属的金属-非金属复合膜可包含其它金属以及非金属元素。
在一些实施例中,所述膜堆叠体的所述所要厚度大于1200埃。在一些实施例中,所述膜堆叠体的所述所要厚度大于1800埃。在一些实施例中,所述膜堆叠体的所述所要厚度大于2000埃。在一些实施例中,所述膜堆叠体的所述所要厚度大于3000埃。
在一些替代实施例中,所述第二含金属膜可以是金属膜。也就是说,所述膜堆叠体可包含交替布置的金属膜与金属-非金属复合膜。可以以各种方式形成金属膜与金属-非金属复合膜的膜堆叠体。在一些实施例中,所述金属膜通过下列形成:在反应性气体不存在下溅镀金属靶材。所述金属-非金属复合膜可通过下列形成:在反应性气体存在下溅镀所述金属靶材。在一些其它实施例中,所述金属-非金属复合膜可通过下列形成:在反应性气体不存在下溅镀所述金属靶材而形成金属膜,以及之后以反应性气体处理所述金属膜。
图4A是根据本揭露的一些实施例绘示氮化钽层与富含钽的氮化钽层的膜堆叠体的能量散布波谱(energy dispersive spectroscopy,EDS),以及图4B是根据本揭露的一些其它实施例绘示氮化钽层与富含钽的氮化钽层的膜堆叠体的EDS。如图4A中所绘示,膜堆叠体5包含交替形成的两个氮化钽层5a与两个富含钽的氮化钽层5b。在本实施例中,膜堆叠体5的整体厚度为约2000埃,且氮化钽层5a与富含钽的氮化钽层5b的厚度为约1000埃。在一些实施例中,富含钽的氮化钽层5b对氮化钽层5a的厚度比率为约1:4。富含钽的氮化钽层5b对氮化钽层5a的厚度比率可被修改,例如通过调整图2中操作210以及220的持续时间或通过调整在操作310以及320的处理中反应性气体的量。如图4B中所绘示,膜堆叠体5包含交替形成的三个氮化钽层5a与三个富含钽的氮化钽层5b。在本实施例中,膜堆叠体5的整体厚度为约1800埃,且氮化钽层5a与富含钽的氮化钽层5b的厚度为约600埃。在一些实施例中,富含钽的氮化钽层5b对氮化钽层5a的厚度比率为约1:3。
如图4A以及4B所显示,EDS分析显示清楚波峰以及波谷,其意指包括所述金属-非金属复合膜与所述富含金属的金属-非金属复合膜的所述膜堆叠体可通过图1到3中所揭示之前述方法制造。
应理解,所述金属-非金属复合膜以及所述富含金属的金属-非金属复合膜的数目以及厚度不限于前述实施例,且可基于所要要求以及规格修改。
金属-非金属复合膜,例如氮化钽膜或氧化钽膜是用来作为保护层以及阻障层,此是由于它的抗扩散以及抗腐蚀能力。然而,金属-非金属复合膜患于剥离问题以及粒子(particle)议题,尤其是当于一些应用中要求厚的膜厚度时。所述金属-非金属复合膜与所述富含金属的金属-非金属复合膜的所述膜堆叠体用以作为厚保护层或阻障层而无患于剥离问题以及粒子议题。
除了缓解剥离问题以及粒子议题外,所述金属-非金属复合膜与所述富含金属的金属-非金属复合膜的所述膜堆叠体也能够减少应力。再者,所述金属-非金属复合膜与所述富含金属的金属-非金属复合膜的所述膜堆叠体可减少电阻。与厚金属-非金属复合膜相比,所述金属-非金属复合膜与所述富含金属的金属-非金属复合膜的所述膜堆叠体具有较低电阻,导致电性特性的改善。
图5A是绘示形成在衬底上方的金属-非金属复合膜的示意图。如图5A中所绘示,金属-非金属复合膜2形成在衬底1上。随着厚度增加,固有的针孔3或裸片边界4倾向于沿着金属-非金属复合膜2的厚度方向蔓延,其将会导致剥离。此外,当金属-非金属复合膜2用以作为阻障层以及保护层时,蔓延的针孔3以及裸片边界4影响金属-非金属复合膜2的抗扩散以及抗腐蚀能力。当金属-非金属复合膜2的厚度增加到约1200埃或更高时,粒子议题也变得严重。因为金属-非金属复合膜2,例如氮化钽具有本质上大的压缩应力以及易脆性质,预期粒子议题是因操作期间粒子从反应舱墙掉落所致。
图5B是绘示形成在衬底上的金属-非金属复合膜与富含金属的金属-非金属复合膜的膜堆叠体的示意图。如图5B中所绘示,金属-非金属复合膜2a与富含金属的金属-非金属复合膜2b的膜堆叠体是用以阻挡针孔3以及裸片边界4的蔓延路径。具体地,针孔3以及裸片边界4的蔓延路径被阻挡在金属-非金属复合膜2a与富含金属的金属-非金属复合膜2b之间的接口。如此,金属-非金属复合膜2a与富含金属的金属-非金属复合膜2b的膜堆叠体的阻障以及保护效果更可靠。剥离议题也被缓解。
所述富含金属的金属-非金属复合膜也用以作为粘贴层,以缓解粒子议题。具体地,由于金属-非金属复合膜2a与富含金属的金属-非金属复合膜2b交替堆叠在衬底1上,金属-非金属复合膜2a以及富含金属的金属-非金属复合膜2b也被形成在反应舱墙上。在反应舱墙上的富含金属的金属-非金属复合膜2b能够粘贴易脆的金属-非金属复合膜2a的粒子,借此减少粒子从反应舱墙掉落。据此,粒子议题被缓解,特别是当膜堆叠体的厚度超出1200埃时。
图6是根据本揭露的一些实施例绘示半导体装置的示意图。如图6中所绘示,半导体装置10包含衬底20、金属间介电(inter-metal dielectric,IMD)层11、第一导电层12、钝化层22、第二导电层14、阻障层16、以及多层膜18。衬底20包含半导体衬底或晶片,所述半导体衬底或晶片待于其上方形成装置例如半导体装置以及其它主动或被动装置的半导体衬底或晶片。在一些实施例中,衬底20包含半导体衬底,例如主体半导体衬底。所述主体半导体衬底包含元素半导体,例如硅或锗;化合物半导体,例如硅锗、碳化硅、砷化镓、磷化镓、磷化铟或砷化铟;或其组合。在一些实施例中,衬底20包含多层衬底,例如绝缘体上硅(silicon-on-insulator,SOI)衬底,其包含底部半导体层、埋藏氧化物层(buried oxidelayer,BOX)以及顶部半导体层。
在一些实施例中,IMD层11为最顶的IMD层,以及第一导电层12为互连层的最顶的金属化层。第一导电层12形成在衬底20上方以及第一导电层12的一部份被IMD层11所暴露。第一导电层12可通过平坦化操作,例如化学机械研磨(chemical mechanical polishing,CMP)处理,而得到与IMD层11大体上共平面的经平坦化表面。第一导电层12的材料可包含但不限于,例如铜、铜合金或铜系导电材料。在一些实施例中,IMD层11为低k介电层,具有小于约3.9的介电常数。例如,IMD层11的材料可包含但不限于氧化硅、氮化硅、硅氧氮化物、磷硅酸盐玻璃(phosphosilicate glass,PSG)、硼磷硅酸盐玻璃(Borophosphosilicate glass,BPSG)、含氟氧化硅或其它合适的无机及/或有机介电材料。
在一些实施例中,钝化层22形成在IMD层11上方以保护第一导电层12。钝化层22具有开口22H,暴露第一导电层12的上表面12U的至少一部分。钝化层22的材料可包含但不限于氧化硅,例如原硅酸四乙酯(tetraethyl orthosilicate,TEOS)氧化物、氮化硅或任何其它合适的绝缘材料。
第二导电层14形成在第一导电层12上方且电连接到第一导电层12。在一些实施例中,第二导电层14的材料可包含但不限于铝铜。第二导电层14的材料可包含铜或任何其它合适的导电材料。在一些实施例中,第二导电层14的表面14U大体上为平面。
阻障层16形成在第一导电层12与第二导电层14之间。阻障层16用以作为扩散阻障,以防止从第一导电层12扩散。阻障层16也可用以增进第一导电层12与第二导电层14之间的粘着,以及也用以作为应力缓冲层。阻障层16可以是单层或多层。在一些实施例中,阻障层16是导电的。在一些实施例中,阻障层16的材料可包含但不限于钽、钛、氮化钽、氮化钛、钨、其组合或任何其它合适的导电以及阻障材料。在一些实施例中,阻障层16大体上共形,且填充在钝化层22的开口22H中。
多层膜18包含多个彼此交替布置与堆叠的金属-非金属复合膜181与富含金属的金属-非金属复合膜182。在一些实施例中,金属-非金属复合膜181是金属氮化物膜,以及富含金属的金属-非金属复合膜182是富含金属的金属氮化物膜。举例来说,金属-非金属复合膜181是氮化钽膜,以及富含金属的金属-非金属复合膜182是富含钽的氮化钽膜。在一些其它实施例中,金属-非金属复合膜181是金属氧化物膜,以及富含金属的金属-非金属复合膜182是富含金属的金属氧化物膜。举例来说,金属-非金属复合膜181是氧化钽膜,以及富含金属的金属-非金属复合膜182是富含钽的氧化钽膜。
在一些实施例中,多层膜18的厚度大于1200埃。在一些实施例中,多层膜18的厚度大于1800埃。在一些实施例中,多层膜18的厚度大于2000埃。在一些实施例中,多层膜18的厚度大于3000埃。
在富含金属的金属-非金属复合膜182中金属元素的浓度高于在富含金属的金属-非金属复合膜182中非金属元素的浓度。在一些实施例中,在富含金属的金属-非金属复合膜182中金属元素的浓度大于50%。在一些实施例中,在富含金属的金属-非金属复合膜182中金属元素的浓度大于55%。在一些实施例中,在富含金属的金属-非金属复合膜182中金属元素的浓度大于60%。在一些实施例中,在富含金属的金属-非金属复合膜182中金属元素的浓度大于75%。
在一些实施例中,多层膜18围住第二导电层14的侧壁14S并覆盖第二导电层14的表面14U。多层膜18用以防止第二导电层14在后续操作期间被腐蚀。由于金属-非金属复合膜181与富含金属的金属-非金属复合膜182所形成的多层膜18能够缓解针孔以及裸片边界的蔓延,环绕第二导电层14的多层膜18可提供实质阻障以及保护效果。此外,由于与具有较少量金属元素的所述金属-非金属复合膜相比,具有较高量金属元素的所述富含金属的金属-非金属复合膜具有减少的电阻,故包含金属-非金属复合膜181与富含金属的金属-非金属复合膜182的多层膜18具有减少的电阻。与单层厚金属-非金属复合层相比,多层膜18具有较低电阻,而导致电性特性的改善。
图7是根据本揭露的一些实施例绘示半导体装置的示意图。如图7中所绘示,图7中的半导体装置10A与图6中的半导体装置10之间的差异的一者在于第二导电层14的表面14U凹陷。据此,包含金属-非金属复合膜181与富含金属的金属-非金属复合膜182的多层膜18啮合到凹陷的表面14U中,借此增进多层膜18与第二导电层14之间的粘着。
图8是根据本揭露的一些实施例绘示半导体装置的示意图。如图8中所绘示,在半导体装置10B中,形成介电层24,环绕多层膜18的侧向侧。介电层24的材料可包含任何合适的介电材料。多层膜18具有开口18H,开口18H暴露第二导电层14的表面14U的至少一部分。在一些实施例中,表面14U的***部分,其靠近第二导电层14的侧壁14S,被多层膜18覆盖。
在一些实施例中,介电层24以及多层膜18的开口18H可通过但不限于相同的光微影操作图案化。例如,介电层24以及多层膜18可通过湿式蚀刻图案化。如此,环绕第二导电层14的侧壁14S的多层膜18用以防止第二导电层14被蚀刻或清洁溶液腐蚀。
在一些实施例中,多层膜18的一部份大体上沿着第二导电层14的侧壁14S延伸。所述种部份用以作为的间隔件以环绕侧壁14S。所述部分的曲度或形态大体上依循侧壁14S的曲度或形态。因此,多层膜18提供围绕侧壁14S的复合侧壁间隔件。所述复合侧壁间隔件是含金属结构。
半导体装置10B进一步包含导体26,在第二导电层14上方,且透过多层膜18的开口18H电连接到第二导电层14。在一些实施例中,导电特征26可以是接合垫、导电凸块或任何其它导电特征。
在一些实施例中,导体26部分地被多层膜18环绕。导体26的被环绕部分靠近表面14U,其也是导体26与第二导电层14之间的接口。
图9是根据本揭露的一些实施例绘示一半导体装置的示意图。如图9中所绘示,图9中的半导体装置10C与图8中的半导体装置10B之间的差异的一者在于,在半导体装置10C中,第二导电层14的表面14U凹陷。据此,导体26啮合到凹陷的表面14U中,借此增进导体26与第二导电层14之间的粘着。
图10是根据本揭露的一些实施例绘示半导体装置的示意图。如图10中所绘示,半导体装置10D进一步包含电子装置30。电子装置30可包含发光装置、集成电路(integratedcircuit,IC)芯片、中介物或任何其它合适的电子装置。电子装置30可透过倒置芯片接合、打线接合或任何其它合适的接合方法连接到导体26。
在本揭露实施例中,多层膜(膜堆叠体)包含在多阶段沉积中交替形成的金属-非金属复合膜与富含金属的金属-非金属复合膜。多层膜可对粒子提供粘贴效果、可减少应力以避免剥离、可减少电阻以增进电性特性、以及可改善阻障以及保护效果。
在示范性方面中,提供了一种半导体装置。所述半导体装置包含第一导电层、第二导电层、阻障层、以及多层膜。所述第一导电层在一衬底上方。所述第二导电层在所述第一导电层上方且电连接到所述第一导电层。所述阻障层在所述第一导电层与所述第二导电层之间。所述多层膜围住所述第二导电层的侧壁,其中所述多层膜包括多个彼此交替布置的第一含金属膜与第二含金属膜。所述第一含金属膜以及所述第二含金属膜包括相同金属元素,以及在所述第二含金属膜中所述金属元素的浓度高于在所述第一含金属膜中所具者。
在另一示范性方面中,提供了一种膜堆叠体。所述膜堆叠体包含多个第一含金属膜,以及多个第二含金属膜。所述第一含金属膜与所述第二含金属膜彼此交替堆叠。所述第一含金属膜以及所述第二含金属膜包括相同金属元素以及相同非金属元素,以及在所述第二含金属膜中所述金属元素的浓度大于50%。
在又另一方面中,提供了一种用于形成膜堆叠体在衬底上的方法。所述方法包含下列操作。(a)形成第一含金属膜在所述衬底上方。(b)形成第二含金属膜在所述第一含金属膜上方,其中所述第一含金属膜以及所述第二含金属膜包括相同金属元素,以及在所述第二含金属膜中所述金属元素的浓度高于在所述第一含金属膜中所具者。(c)重复操作(a)及(b)而形成所述第一含金属膜与所述第二含金属膜交替布置的膜堆叠体,直到达到所述膜堆叠体的所要厚度。
前面列述了数个实施例的结构以便所属领域的普通技术人员可更好地理解本揭露实施例的方面。所属领域的普通技术人员应了解他们可轻易地使用本揭露实施例作为用以设计或修改其它过程及结构的基础以实现本文中所介绍实施例的相同目的及/或达成本文中所介绍实施例的相同优点。所属领域的普通技术人员也应体认到这些均等构造不会悖离本揭露实施例的精神及范围,以及他们可在不悖离本揭露实施例的精神及范围下做出各种改变、取代或替代。
符号说明
100、200、300:方法
110、120、130、210、220、230、310、320、330:操作
1、20:衬底
2、2a、181:金属-非金属复合膜
2b、182:富含金属的金属-非金属复合膜
3:针孔
4:裸片边界
5:膜堆叠体
5a:氮化钽层
5b:富含钽的氮化钽层
10、10A、10B、10C、10D:半导体装置
11:金属间介电层/IMD层
12:第一导电层
12U:上表面
14:第二导电层
14U:表面
14S:侧壁
16:阻障层
18:多层膜
18H、22H:开口
22:钝化层
24:介电层
26:导电特征
30:电子装置
Claims (19)
1.一种半导体装置,其包括:
第一导电层,在衬底上方;
第二导电层,在所述第一导电层上方且电连接到所述第一导电层;
阻障层,在所述第一导电层与所述第二导电层之间;以及
多层膜,围住所述第二导电层的侧壁,其中所述多层膜包括多个彼此交替布置的第一含金属膜与第二含金属膜,所述第一含金属膜以及所述第二含金属膜包括相同金属元素,在所述第二含金属膜中所述金属元素的浓度高于在所述第一含金属膜中所具者,以及在所述第二含金属膜中所述金属元素的所述浓度大于50%。
2.根据权利要求1所述的半导体装置,其中在所述第二含金属膜中所述金属元素的所述浓度大于55%。
3.根据权利要求2所述的半导体装置,其中在所述第二含金属膜中所述金属元素的所述浓度大于60%。
4.根据权利要求3所述的半导体装置,其中在所述第二含金属膜中所述金属元素的所述浓度大于75%。
5.根据权利要求1所述的半导体装置,其中所述第一含金属膜以及所述第二含金属膜包括相同非金属元素。
6.根据权利要求5所述的半导体装置,其中所述第一含金属膜以及所述第二含金属膜的所述金属元素包括钽,以及所述第一含金属膜以及所述第二含金属膜的所述非金属元素包括氮。
7.根据权利要求5所述的半导体装置,其中所述第一含金属膜以及所述第二含金属膜的所述金属元素包括钽,以及所述第一含金属膜以及所述第二含金属膜的所述非金属元素包括氧。
8.根据权利要求1所述的半导体装置,其中所述多层膜的整体厚度大于1200埃。
9.根据权利要求8所述的半导体装置,其中所述多层膜的所述整体厚度大于2000埃。
10.根据权利要求1所述的半导体装置,其中所述第二导电层的材料包括铜或铝铜。
11.根据权利要求1所述的半导体装置,其中所述第二导电层的表面的一部份被所述多层膜所暴露。
12.一种膜堆叠体,其包括:
多个第一含金属膜;以及
多个第二含金属膜,所述第一含金属膜与所述第二含金属膜彼此交替堆叠,
其中,所述第一含金属膜以及所述第二含金属膜包括相同金属元素,以及在所述第二含金属膜中所述金属元素的浓度大于50%。
13.根据权利要求12所述的膜堆叠体,其中所述第一含金属膜以及所述第二含金属膜的所述金属元素包括钽,以及所述第一含金属膜以及所述第二含金属膜的非金属元素包括氮。
14.根据权利要求12所述的膜堆叠体,其中所述第一含金属膜以及所述第二含金属膜的所述金属元素包括钽,以及所述第一含金属膜以及所述第二含金属膜的非金属元素包括氧。
15.一种用于形成膜堆叠体在衬底上的方法,其包括:
(a)形成第一含金属膜在所述衬底上方;
(b)形成第二含金属膜在所述第一含金属膜上方,其中所述第一含金属膜以及所述第二含金属膜包括相同金属元素,在所述第二含金属膜中所述金属元素的浓度高于在所述第一含金属膜中所具者,以及在所述第二含金属膜中所述金属元素的浓度大于50%;以及
(c)重复操作(a)及(b)而形成所述第一含金属膜与所述第二含金属膜交替布置的膜堆叠体,直到达到所述膜堆叠体的所要厚度。
16.根据权利要求15所述的方法,其中
形成所述第一含金属膜在所述衬底上方包括在反应性气体存在下以反应性气体的第一量溅镀金属靶材;且
形成所述第二含金属膜在所述第一含金属膜上方包括在所述反应性气体存在下以小于所述第一量的反应性气体的第二量溅镀所述金属靶材。
17.根据权利要求15所述的方法,其中
形成所述第一含金属膜在所述衬底上方包括溅镀金属靶材而形成第一金属膜在所述衬底上方,以及以第一量的反应性气体处理所述第一金属膜;且
形成所述第二含金属膜在所述第一含金属膜上方包括溅镀所述金属靶材而形成第二金属膜在所述第一含金属膜上方,以及以小于所述第一量的第二量的所述反应性气体处理所述第二金属膜。
18.根据权利要求15所述的方法,其中所述第一含金属膜以及所述第二含金属膜包含氮化钽膜。
19.根据权利要求15所述的方法,其中所述第一含金属膜以及所述第二含金属膜包含氧化钽膜。
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