CN107002288B - 碳化硅基板的表面处理方法 - Google Patents

碳化硅基板的表面处理方法 Download PDF

Info

Publication number: CN107002288B
Authority: CN; China
Prior art keywords: silicon carbide; carbide substrate; etching; surface treatment; etching rate
Prior art date: 2014-11-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201580063339.9A

Other languages

English (en)

Chinese (zh)

Other versions

CN107002288A (zh

Inventor

金子忠昭

芦田晃嗣

久津间保德

鸟见聪

篠原正人

寺元阳次

矢吹纪人

野上晓

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toyota Tsusho Corp

Kwansei Gakuin Educational Foundation

Original Assignee

Kansai College

Toyo Tanso Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-11-18

Filing date

2015-11-17

Publication date

2020-10-16

2015-11-17 Application filed by Kansai College, Toyo Tanso Co Ltd filed Critical Kansai College

2017-08-01 Publication of CN107002288A publication Critical patent/CN107002288A/zh

2020-10-16 Application granted granted Critical

2020-10-16 Publication of CN107002288B publication Critical patent/CN107002288B/zh

Status Active legal-status Critical Current

2035-11-17 Anticipated expiration legal-status Critical

Links

229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 177
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 173
239000000758 substrate Substances 0.000 title claims abstract description 170
238000000034 method Methods 0.000 title claims abstract description 47
238000004381 surface treatment Methods 0.000 title claims abstract description 35
238000005530 etching Methods 0.000 claims abstract description 215
238000010438 heat treatment Methods 0.000 claims abstract description 55
238000005498 polishing Methods 0.000 claims description 37
229910052715 tantalum Inorganic materials 0.000 claims description 20
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 20
239000011261 inert gas Substances 0.000 claims description 18
239000000126 substance Substances 0.000 claims description 18
229910021332 silicide Inorganic materials 0.000 claims description 17
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
239000000203 mixture Substances 0.000 claims description 7
238000003754 machining Methods 0.000 claims 1
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
229910052786 argon Inorganic materials 0.000 description 15
239000013078 crystal Substances 0.000 description 10
239000004065 semiconductor Substances 0.000 description 9
125000004429 atom Chemical group 0.000 description 8
238000002474 experimental method Methods 0.000 description 6
238000005979 thermal decomposition reaction Methods 0.000 description 6
238000000089 atomic force micrograph Methods 0.000 description 5
238000006243 chemical reaction Methods 0.000 description 5
238000007788 roughening Methods 0.000 description 5
238000005520 cutting process Methods 0.000 description 4
230000000694 effects Effects 0.000 description 4
230000003746 surface roughness Effects 0.000 description 4
230000007547 defect Effects 0.000 description 3
238000003795 desorption Methods 0.000 description 3
238000005424 photoluminescence Methods 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
229910003468 tantalcarbide Inorganic materials 0.000 description 3
125000004432 carbon atom Chemical group C* 0.000 description 2
230000005684 electric field Effects 0.000 description 2
239000007789 gas Substances 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000000463 material Substances 0.000 description 2
NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
238000001878 scanning electron micrograph Methods 0.000 description 2
238000007666 vacuum forming Methods 0.000 description 2
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
229910004474 Ta5Si3 Inorganic materials 0.000 description 1
230000004913 activation Effects 0.000 description 1
MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 description 1
239000007795 chemical reaction product Substances 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
230000005284 excitation Effects 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
230000006698 induction Effects 0.000 description 1
238000007689 inspection Methods 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
238000003475 lamination Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
239000002052 molecular layer Substances 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
238000000241 photoluminescence detection Methods 0.000 description 1
238000003825 pressing Methods 0.000 description 1
238000003672 processing method Methods 0.000 description 1
239000010703 silicon Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
239000000243 solution Substances 0.000 description 1
239000002904 solvent Substances 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Physics & Mathematics (AREA)
Crystallography & Structural Chemistry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Metallurgy (AREA)
Plasma & Fusion (AREA)
Inorganic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Drying Of Semiconductors (AREA)

CN201580063339.9A 2014-11-18 2015-11-17 碳化硅基板的表面处理方法 Active CN107002288B (zh)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2014233632		2014-11-18
JP2014-233632		2014-11-18
PCT/JP2015/005743 WO2016079984A1 (ja)	2014-11-18	2015-11-17	ＳｉＣ基板の表面処理方法

Publications (2)

Publication Number	Publication Date
CN107002288A CN107002288A (zh)	2017-08-01
CN107002288B true CN107002288B (zh)	2020-10-16

Family

ID=56013557

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201580063339.9A Active CN107002288B (zh)	2014-11-18	2015-11-17	碳化硅基板的表面处理方法

Country Status (7)

Country	Link
US (1)	US10665465B2 (ja)
EP (1)	EP3222759A4 (ja)
JP (1)	JP6751875B2 (ja)
KR (1)	KR20170086068A (ja)
CN (1)	CN107002288B (ja)
TW (1)	TWI708873B (ja)
WO (1)	WO2016079984A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6751874B2 (ja) *	2014-11-18	2020-09-09	東洋炭素株式会社	ＳｉＣ基板のエッチング方法
JP2018199591A (ja) *	2017-05-25	2018-12-20	東洋炭素株式会社	ＳｉＣウエハの製造方法、エピタキシャルウエハの製造方法、及びエピタキシャルウエハ
EP3854916A4 (en) *	2018-09-21	2022-06-22	Toyo Tanso Co., Ltd.	PROCESS FOR MANUFACTURING A WAFER FOR FABRICATION OF DEVICES
EP3936645A4 (en) *	2019-03-05	2022-11-09	Kwansei Gakuin Educational Foundation	METHOD AND APPARATUS FOR MANUFACTURING A SIC SUBSTRATE, AND METHOD FOR REDUCING MACRO-LEVEL BUNTING IN A SIC SUBSTRATE
JP2022020995A (ja)	2020-07-21	2022-02-02	三菱電機株式会社	炭化珪素エピタキシャルウエハの製造方法
CN111739796B (zh) *	2020-08-25	2020-11-24	中电化合物半导体有限公司	碳化硅籽晶生长表面的图形化处理方法和装置及形成的碳化硅籽晶
WO2023162472A1 (ja) *	2022-02-24	2023-08-31	学校法人関西学院	積層欠陥の形成を抑制する方法及びその方法により作製された構造、加工変質層の評価方法
JP7364301B1 (ja) *	2023-02-13	2023-10-18	株式会社フィルネックス	半導体基板の製造方法、半導体基板、及び半導体基板の製造装置

Citations (2)

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JP2012209415A (ja) *	2011-03-29	2012-10-25	Kwansei Gakuin	半導体素子の製造方法
WO2014076963A1 (ja) *	2012-11-16	2014-05-22	東洋炭素株式会社	単結晶ＳｉＣ基板の表面処理方法及び単結晶ＳｉＣ基板

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JP2003234313A (ja)	2002-02-07	2003-08-22	Kansai Tlo Kk	ＳｉＣ基板表面の平坦化方法
JP5152887B2 (ja) *	2006-07-07	2013-02-27	学校法人関西学院	単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板
JP5213095B2 (ja)	2007-03-23	2013-06-19	学校法人関西学院	単結晶炭化ケイ素基板の表面平坦化方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板
JP5464544B2 (ja) *	2009-05-12	2014-04-09	学校法人関西学院	エピタキシャル成長層付き単結晶ＳｉＣ基板、炭素供給フィード基板、及び炭素ナノ材料付きＳｉＣ基板
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CN102534808B (zh)	2010-12-14	2014-11-05	北京天科合达蓝光半导体有限公司	高质量碳化硅表面的获得方法
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JP6057292B2 (ja)	2013-06-13	2017-01-11	学校法人関西学院	ＳｉＣ半導体素子の製造方法

2015
- 2015-11-17 US US15/527,526 patent/US10665465B2/en active Active
- 2015-11-17 EP EP15861692.0A patent/EP3222759A4/en not_active Withdrawn
- 2015-11-17 CN CN201580063339.9A patent/CN107002288B/zh active Active
- 2015-11-17 WO PCT/JP2015/005743 patent/WO2016079984A1/ja active Application Filing
- 2015-11-17 JP JP2016560060A patent/JP6751875B2/ja active Active
- 2015-11-17 KR KR1020177016189A patent/KR20170086068A/ko unknown
- 2015-11-18 TW TW104138124A patent/TWI708873B/zh active

Patent Citations (2)

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Publication number	Priority date	Publication date	Assignee	Title
JP2012209415A (ja) *	2011-03-29	2012-10-25	Kwansei Gakuin	半導体素子の製造方法
WO2014076963A1 (ja) *	2012-11-16	2014-05-22	東洋炭素株式会社	単結晶ＳｉＣ基板の表面処理方法及び単結晶ＳｉＣ基板

Also Published As

Publication number	Publication date
TW201629281A (zh)	2016-08-16
KR20170086068A (ko)	2017-07-25
US10665465B2 (en)	2020-05-26
JPWO2016079984A1 (ja)	2017-08-24
CN107002288A (zh)	2017-08-01
TWI708873B (zh)	2020-11-01
US20170345672A1 (en)	2017-11-30
EP3222759A1 (en)	2017-09-27
EP3222759A4 (en)	2018-05-30
WO2016079984A1 (ja)	2016-05-26
JP6751875B2 (ja)	2020-09-09

Legal Events

Date	Code	Title	Description
2017-08-01	PB01	Publication
2017-08-01	PB01	Publication
2017-08-25	SE01	Entry into force of request for substantive examination
2017-08-25	SE01	Entry into force of request for substantive examination
2020-10-16	GR01	Patent grant
2020-10-16	GR01	Patent grant
2023-09-08	TR01	Transfer of patent right	Effective date of registration: 20230822 Address after: Japan Hyogo Prefecture Patentee after: KWANSEI GAKUIN EDUCATIONAL FOUNDATION Patentee after: TOYOTA TSUSHO Corp. Address before: Japan Hyogo Prefecture Patentee before: KWANSEI GAKUIN EDUCATIONAL FOUNDATION Patentee before: TOYO TANSO Co.,Ltd.
2023-09-08	TR01	Transfer of patent right

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