CN106952871A - 保护膜覆盖方法 - Google Patents
保护膜覆盖方法 Download PDFInfo
- Publication number
- CN106952871A CN106952871A CN201610997931.2A CN201610997931A CN106952871A CN 106952871 A CN106952871 A CN 106952871A CN 201610997931 A CN201610997931 A CN 201610997931A CN 106952871 A CN106952871 A CN 106952871A
- Authority
- CN
- China
- Prior art keywords
- framework
- ring
- water
- type
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000012528 membrane Substances 0.000 title claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 69
- 229920005989 resin Polymers 0.000 claims abstract description 69
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000011218 segmentation Effects 0.000 claims description 24
- 239000002390 adhesive tape Substances 0.000 claims description 18
- 239000012530 fluid Substances 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 70
- 239000004065 semiconductor Substances 0.000 description 64
- 238000005253 cladding Methods 0.000 description 21
- 239000007921 spray Substances 0.000 description 20
- 238000010521 absorption reaction Methods 0.000 description 14
- 239000004372 Polyvinyl alcohol Substances 0.000 description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 description 8
- 229940068984 polyvinyl alcohol Drugs 0.000 description 8
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Laser Beam Processing (AREA)
Abstract
提供保护膜覆盖方法,容易地将附着在经由保护带对晶片进行支承的环状的框架的上表面的液状树脂去除。保护膜覆盖方法利用水溶性树脂在晶片的正面上覆盖保护膜,在该晶片的正面上形成有多个器件,该保护膜覆盖方法包含将在保护膜覆盖工序中飞散到环状的框架的上表面的水溶性树脂去除的水溶性树脂去除工序。在水溶性树脂去除工序中,一边使旋转工作台旋转一边将清洗喷嘴定位在旋转工作台所保持的环状的框架的上表面而向环状的框架的上表面提供清洗水,并且将空气喷嘴与该清洗喷嘴相邻地定位在旋转方向下游侧,提供空气以使该空气逆着被提供到环状的框架的上表面的清洗水的移动而使清洗水暂时滞留并且将清洗水排出到环状的框架的外侧。
Description
技术领域
本发明涉及在半导体晶片等晶片的正面上覆盖保护膜的保护膜覆盖方法。
背景技术
如本领域技术人员已知的那样,在半导体器件制造工艺中,在硅等半导体基板的正面上通过呈格子状排列的分割预定线划分出多个区域,在该划分出的区域内形成有IC、LSI等器件。关于这样形成的半导体晶片,通过沿着分割预定线进行切断而制造出各个器件芯片。并且,在光器件晶片中,在蓝宝石基板等的正面上通过呈格子状形成的分割预定线划分出多个区域,在该划分出的区域内层叠有氮化镓类化合物半导体等并形成有光器件,沿着分割预定线将该光器件晶片分割成各个发光二极管、激光二极管等光器件芯片并广泛地应用在电子设备中。
作为沿着分割预定线对这样的半导体晶片或光器件晶片等晶片进行分割的方法,提出了如下的方法:通过沿着形成在晶片上的分割预定线照射脉冲激光光线来形成激光加工槽,并沿着该激光加工槽借助机械切割装置来割断晶片。
与切削加工相比,激光加工能够加快加工速度,并且即使是由如蓝宝石那样硬度较高的材料构成的晶片也能够比较容易地进行加工。但是,当沿着晶片的分割预定线照射激光光线时,在所照射的区域内因热量集中而产生碎屑,该碎屑附着在器件的正面而产生使器件的品质降低的新的问题。
为了解决因上述碎屑而导致的问题,提出了如下的激光加工机:在晶片的加工面上覆盖聚乙烯醇(PVA)等保护膜,并通过保护膜向晶片照射激光光线。(例如,参照专利文献1。)
适用于在上述专利文献1中公开的激光加工机的保护膜的覆盖方法是所谓的旋涂法,通过向保持在旋转工作台上的晶片的中心部提供聚乙烯醇(PVA)等水溶性树脂,并使旋转工作台旋转而借助离心力来使水溶性树脂朝向晶片的外周移动,在晶片的正面上形成保护膜。
专利文献1:日本特开2004-322168公报
然而,由于保护带被安装在环状的框架上,晶片在粘接在该保护带的正面并保持在旋转工作台上的状态下形成保护膜,所以水溶性树脂飞散并附着在环状的框架的上表面。因此,存在如下的问题:在对经由保护带被支承于环状的框架的晶片进行搬送时,附着在环状的框架的上表面的液状树脂如粘合剂那样发生作用而使环状的框架不能从搬送单元脱离。
并且,虽然也提出了在通过保护膜覆盖单元在晶片的正面上覆盖了保护膜之后,向分散在环状的框架的上表面的水溶性树脂提供清洗水而将水溶性树脂从环状的框架的上表面去除的方案,但存在如下的问题:为了可靠地去除附着在环状的框架的上表面的水溶性树脂而需要相当的时间,且不能进行顺畅的激光加工。
发明内容
本发明是鉴于上述事实而完成的,其主要的技术课题在于,提供保护膜覆盖方法,能够容易地将附着在经由保护带对晶片进行支承的环状的框架的上表面的液状树脂去除。
为了解决上述主要的技术课题,根据本发明,提供保护膜覆盖方法,利用水溶性树脂在晶片的正面上覆盖保护膜,该晶片在正面上呈格子状形成有多条分割预定线并且在由该多条分割预定线划分出的多个区域内形成有器件,该保护膜覆盖方法的特征在于,
具有如下的工序:
晶片支承工序,在具有对晶片进行收容的开口的环状的框架的该开口中经由粘合带而粘接晶片的背面,从而利用环状的框架对晶片进行支承;
晶片保持工序,在经由粘合带将晶片支承在环状的框架上的状态下以晶片的正面作为上侧而保持在旋转工作台上;
保护膜覆盖工序,一边使旋转工作台旋转一边向旋转工作台所保持的晶片的正面中央区域滴下水溶性树脂,从而在晶片的正面上覆盖由水溶性树脂形成的保护膜;以及
水溶性树脂去除工序,将在该保护膜覆盖工序中飞散到环状的框架的上表面的水溶性树脂去除,
在该水溶性树脂去除工序中,一边使旋转工作台旋转一边将清洗喷嘴定位在旋转工作台所保持的环状的框架的上表面而向环状的框架的上表面提供清洗水,并且将空气喷嘴与该清洗喷嘴相邻地定位在旋转方向下游侧,提供空气以使该空气逆着被提供到环状的框架的上表面的清洗水的移动而使清洗水暂时滞留并且将清洗水排出到环状的框架的外侧。
本发明的保护膜覆盖方法,包含将在该保护膜覆盖工序中飞散到环状的框架的上表面的水溶性树脂去除的水溶性树脂去除工序。由于在该水溶性树脂去除工序中,一边使旋转工作台旋转一边将清洗喷嘴定位在旋转工作台所保持的环状的框架的上表面而向环状的框架的上表面提供清洗水,并且将空气喷嘴与该清洗喷嘴相邻地定位在旋转方向下游侧,提供空气以使该空气逆着被提供到环状的框架的上表面的清洗水的移动而使清洗水暂时滞留并且将清洗水排出到环状的框架的外侧,所以通过所滞留的清洗水来溶解附着在环状的框架的上表面的水溶性树脂而提高清洗效果,并能够在短时间内有效地去除水溶性树脂。因此,在对经由保护带被环状的框架支承的晶片进行搬送时,解决了附着在环状的框架的上表面的水溶性树脂如粘合剂那样发生作用而使环状的框架不能从搬送单元脱离的问题。
附图说明
图1是具有用于实施本发明的保护膜覆盖方法的保护膜覆盖装置的激光加工机的立体图。
图2是对装备于图1所示的激光加工机的保护膜覆盖装置的一部分进行断裂而示出的立体图。
图3是示出将图2所示的保护膜覆盖装置的旋转工作台定位在被加工物搬入/搬出位置的状态的剖视图。
图4是示出将图2所示的保护膜覆盖装置的旋转工作台定位在作业位置的状态的剖视图。
图5是作为被加工物的半导体晶片的立体图。
图6是实施了晶片支承工序的半导体晶片的立体图。
图7的(a)和(b)是示出保护膜覆盖工序的说明图。
图8的(a)和(b)是示出水溶性树脂去除工序的说明图。
图9的(a)~(c)是示出通过图1所示的激光加工机所实施的激光加工槽形成工序的说明图。
标号说明
1:激光加工机;2:装置外壳;3:卡盘工作台;4:激光光线照射单元;42:聚光器;5:拍摄单元;6:显示单元;7:保护膜覆盖装置;71:旋转工作台机构;711:旋转工作台;74:水溶性树脂提供单元;741:树脂提供喷嘴;75:清洗水提供单元;751:清洗水喷嘴;76:空气提供单元;760:空气喷嘴;10:半导体晶片;101:分割预定线;102:器件;110:保护膜;11:环状的框架;12:粘合带;13:盒;14:暂放单元;15:被加工物搬出/搬入单元;16:第1被加工物搬送单元;17:第2被加工物搬送单元。
具体实施方式
以下,参照附图对本发明的保护膜覆盖方法的优选的实施方式进行详细地说明。
在图1中示出了装备有用于实施本发明的保护膜覆盖方法的保护膜覆盖装置的激光加工机的立体图。
图1所示的激光加工机1具有大致长方体状的装置外壳2。在该装置外壳2内配设有作为对被加工物进行保持的被加工物保持单元的卡盘工作台3,该卡盘工作台3能够在作为切削进给方向的箭头X所示的方向上移动。卡盘工作台3具有吸附卡盘支承台31和安装在该吸附卡盘支承台31上的吸附卡盘32,并通过未图示的吸引单元将作为被加工物的例如圆盘状的半导体晶片保持在作为该吸附卡盘32的正面的载置面上。并且,卡盘工作台3构成为能够通过未图示的旋转机构而转动。在这样构成的卡盘工作台3的吸附卡盘支承台31上配设有用于对后述的环状的框架进行固定的夹具34。
图示的激光加工机1具有激光光线照射单元4。激光光线照射单元4具有激光光线振荡单元41和对由该激光光线振荡单元振荡出的激光光线进行会聚的聚光器42。
激光加工机1具有拍摄单元5,该拍摄单元5对保持在上述卡盘工作台3的吸附卡盘32上的被加工物的正面进行拍摄,并对由从上述激光光线照射单元4的聚光器41照射的激光光线加工的区域进行检测。在本实施方式中,该拍摄单元5除了具有通过可见光来进行拍摄的通常的拍摄元件(CCD)之外,还包含:红外线照明单元,其对被加工物照射红外线;光学***,其对由该红外线照明单元照射的红外线进行捕捉;以及拍摄元件(红外线CCD)等,其输出与由该光学***捕捉到的红外线对应的电信号,该拍摄单元5将拍摄得到的图像信号发送到后述的控制单元。并且,图示的激光加工机具有对由拍摄单元5拍摄的图像进行显示的显示单元6。
激光加工机1具有在作为加工前的被加工物的晶片的正面(加工面)上覆盖保护膜的保护膜覆盖装置7。参照图2到图4对该保护膜覆盖装置7进行说明。保护膜覆盖装置7具有旋转工作台机构71和包围该旋转工作台机构71而配设的清洗水接收单元72。旋转工作台机构71具有:旋转工作台711;电动机712,其对该旋转工作台711进行旋转驱动;支承机构713,其将该电动机712支承为能够在上下方向上移动。旋转工作台711具有吸附卡盘711a,该吸附卡盘711a的由多孔性材料形成的上表面作为对被加工物进行保持的保持面,该吸附卡盘711a与未图示的吸引单元连通。因此,关于旋转工作台711,将作为被加工物的晶片载置在吸附卡盘711a上并通过未图示的吸引单元作用负压,由此,将晶片保持在吸附卡盘711上。另外,旋转工作台711的外径形成为比后述的环状的框架的内周大且比其外周小,因此,当将后述的环状的框架保持在旋转工作台711的上表面上时,环状的框架的外周部成为从旋转工作台711的外周向外侧突出的状态。上述电动机712的驱动轴712a的上端与上述旋转工作台711连结。上述支承机构713由多条(在本实施方式中为3条)支承腿713a和分别与该支承腿713a连结并安装在电动机712上的多个(在本实施方式中为3个)气缸713b构成。关于这样构成的支承机构713,通过使气缸713b进行动作而将电动机712和旋转工作台711定位在图3所示的上方位置即被加工物搬入/搬出位置和图4所示的下方位置即作业位置。
上述清洗水接收单元72具有:清洗水接收容器721;3条(在图2中示出了两条)支承腿722,它们对该清洗水接收容器721进行支承;以及罩盖部件723,其安装在上述电动机712的驱动轴712a上。如图3和图4所示,清洗水接收容器721由圆筒状的外侧壁721a、底壁721b和内侧壁721c构成。在底壁721b的中央部设置有供上述电动机712的驱动轴712a贯穿***的孔721d,并形成有从该孔721d的周缘向上方突出的内侧壁721c。并且,如图2所示,在底壁721b上设置有排液口721e,该排液口721e与排水软管724连接。上述罩盖部件723形成为圆盘状,并具有从其外周缘向下方突出的罩盖部723a。当电动机712和旋转工作台711定位在图4所示的作业位置处时,这样构成的罩盖部件723被定位成罩盖部723a与构成上述清洗水接收容器721的内侧壁721c的外侧具有间隙而重合。
保护膜覆盖装置7具有水溶性树脂提供单元74,该水溶性树脂提供单元74向保持在上述旋转工作台711上的作为加工前的被加工物的晶片的加工面提供液状的水溶性树脂。水溶性树脂提供单元74具有:树脂提供喷嘴741,其向保持在旋转工作台711上的加工前的晶片的加工面提供水溶性树脂;能够进行正转/反转的电动机742,其使该树脂提供喷嘴741摇动,树脂提供喷嘴741与未图示的水溶性树脂液提供源连接。树脂提供喷嘴741由水平延伸的喷嘴部741a和从该喷嘴部741a朝向下方延伸的支承部741b构成,支承部741b以贯穿***到设置于构成上述清洗液回收容器721的底壁721b的未图示的贯穿***孔中的方式配设并与未图示的水溶性树脂液提供源连接。
保护膜覆盖装置7具有清洗水提供单元75,该清洗水提供单元75用于向保持在上述旋转工作台711上的后述的环状的框架和加工后的晶片提供清洗水。清洗水提供单元75具有:清洗喷嘴751,其提供对附着在保持于旋转工作台711上的后述的环状的框架的水溶性树脂进行清洗的清洗水,并且向保持在旋转工作台711上的加工后的晶片提供清洗水;以及能够进行正转/反转的电动机752,其使该清洗喷嘴751摇动,该清洗喷嘴751与未图示的清洗水提供源连接。清洗喷嘴751由水平延伸且前端部朝向下方弯曲的喷嘴部751a和从该喷嘴部751a的基端朝向下方延伸的支承部751b构成,支承部751b以贯穿***到设置于构成上述清洗液回收容器721的底壁721b的未图示的贯穿***孔中的方式配设并与未图示的清洗水提供源连接。
并且,如图2所示,保护膜覆盖装置7具有用于向保持在上述旋转工作台711上的后述的环状的框架提供空气的空气提供单元76。空气提供单元76具有:空气喷嘴760,其向保持在上述旋转工作台711上的后述的环状的框架的上表面提供空气;以及能够进行正转/反转的电动机(未图示),其使该空气喷嘴760摇动,该空气喷嘴760与未图示的空气提供源连接。空气喷嘴760由喷嘴部761和从该喷嘴部761的基端朝向下方延伸的支承部762构成,其中,该喷嘴部761的前端部朝向下方倾斜并且在前端具有多个喷出口761a,支承部762以贯穿***到设置于构成上述清洗液回收容器721的底壁721b的未图示的贯穿***孔中的方式配设并与未图示的空气提供源连接。另外,喷嘴部761的多个喷出口761a在水平方向上排列并分别被设置成稍微朝向下方倾斜。
当回到图1继续进行说明时,激光加工机1具有对盒进行载置的盒载置部13a,该盒对作为被加工物即晶片的后述的半导体晶片进行收容。在盒载置部13a上配设有能够通过未图示的升降单元来上下移动的盒工作台131,在该盒工作台131上载置有盒13。
激光加工机1具有:被加工物搬出/搬入单元15,其将收纳在上述盒13中的加工前的半导体晶片搬出到配设于暂放部14a的暂放单元14上并且将加工后的半导体晶片搬入到盒13中;第1被加工物搬送单元16,其将搬出到暂放单元14上的加工前的半导体晶片搬送到保护膜覆盖装置7上并且将借助保护膜覆盖装置7在正面上覆盖了保护膜的半导体晶片10搬送到上述卡盘工作台3上;以及第2被加工物搬送单元17,其将在卡盘工作台3上进行了激光加工后的半导体晶片10搬送到保护膜覆盖装置7上。
激光加工机1如以上所述的那样构成,以下,对使用激光加工机1在作为被加工物的晶片的正面上覆盖保护膜而实施激光加工的晶片的加工方法进行说明。在图5中示出了作为被加工物即晶片的半导体晶片的立体图。图5所示的半导体晶片10由硅晶片构成,在正面10a上由呈格子状形成的多条分割预定线101划分出多个区域,在该划分出的区域内形成有IC、LSI等器件102。
要想在上述半导体晶片10的正面上覆盖保护膜而沿着分割预定线101实施激光加工,首先实施晶片支承工序,经由粘合带将晶片的背面粘接在具有对晶片进行收容的开口的环状的框架的该开口中而利用环状的框架对晶片进行支承。即,如图6所示,将半导体晶片10的背面10b粘接在粘合带12的正面上,该粘合带12的外周部被安装成覆盖环状的框架11的内侧开口部。因此,半导体晶片10经由粘合带12被环状的框架11支承。另外,在图6所示的实施方式中,虽然示出了将半导体晶片10的背面粘接在外周部被安装在环状的框架11上的粘合带12的正面上的例子,但也可以将粘合带12粘接在半导体晶片10的背面上并且同时将粘合带12的外周部安装在环状的框架11上。这样经由粘合带12被环状的框架11支承的半导体晶片10以作为加工面的正面10a为上侧而被收容在图1所示的激光加工机1的盒13中。
如上述那样,为了在收容在盒13中的经由粘合带12被环状的框架11支承的加工前的半导体晶片10(以下,简称为半导体晶片10)的正面上覆盖水溶性树脂的保护膜,通过未图示的升降单元使盒工作台131进行上下动作从而将收容在规定的位置处的半导体晶片10定位在搬出位置。接着,被加工物搬出/搬入单元15进行进退动作而将位于搬出位置的半导体晶片10搬出到配设于暂放部14a的暂放单元14。搬出到暂放单元14的半导体晶片10通过暂放单元14而被对位到规定的位置。接着,通过暂放单元14而被对位后的加工前的半导体晶片10通过第1被加工物搬送单元16的旋转动作而被搬送到构成保护膜覆盖装置7的旋转工作台711的吸附卡盘711a上,并以经由粘合带12被环状的框架11支承的状态被吸引保持在该吸附卡盘711a上(晶片保持工序)。此时,旋转工作台711被定位在图3所示的被加工物搬入/搬出位置,水溶性树脂提供单元74的树脂提供喷嘴741和清洗水提供单元75的清洗喷嘴751以及上述空气提供单元76的空气喷嘴760如图2和图3所示被定位在与旋转工作台711的上方分离的待机位置。
在实施了将加工前的半导体晶片10保持在保护膜覆盖装置7的旋转工作台711上的晶片保持工序之后,将旋转工作台711定位在作业位置,并且如图7的(a)所示对构成水溶性树脂提供单元74的树脂提供喷嘴741的电动机742进行驱动而将树脂提供喷嘴741的喷嘴部741a的喷出口定位在保持于旋转工作台711上的半导体晶片10的中心部上方。然后,使旋转工作台711按照箭头A所示的方向以规定的旋转速度(例如60rpm)以规定的时间(例如100秒)旋转,并且以规定的量(例如4~5毫升/分钟左右)从树脂提供喷嘴741的喷嘴部741a滴下液状的水溶性树脂100。另外,作为水溶性树脂,在图示的实施方式中使用聚乙烯醇(PVA:Poly Vinyl Alcohol)。
这样,以4~5毫升/分钟左右向保持在旋转工作台711上的激光加工前的半导体晶片10的正面10a(加工面)的中央区域滴下聚乙烯醇等水溶性树脂100,并使旋转工作台711以60rpm的旋转速度旋转100秒,由此,如图7的(b)所示,在半导体晶片10的正面10a(加工面)上覆盖厚度为0.2μm~1μm的保护膜110(保护膜覆盖工序)。在该保护膜覆盖工序中,水溶性树脂100因离心力而朝向环状的框架11流动乃至飞散,如图7的(b)所示,水溶性树脂100附着在环状的框架11的上表面。
在实施了上述的保护膜覆盖工序之后,实施水溶性树脂去除工序,将附着在环状的框架11的上表面的水溶性树脂100去除。即,如图8的(a)所示,对清洗水提供单元75的电动机752进行驱动而将清洗喷嘴751的喷嘴部751a的喷出口定位在保持于旋转工作台711上的环状的框架11的上方。并且,对空气提供单元76的未图示的电动机进行驱动而将构成空气喷嘴760的喷嘴部761的具有多个喷出口761a(参照图2)的前端部与清洗喷嘴751的喷嘴部751a相邻而定位在旋转工作台711的旋转方向下游侧。此时,为了不损伤覆盖在半导体晶片10的正面上的保护膜110而将设置于喷嘴部761的前端部的多个喷出口761a(参照图2)定位成从环状的框架11的内侧斜着朝向外侧。然后,一边使旋转工作台711按照箭头A所示的方向以例如90rpm的旋转速度旋转,一边从喷嘴部751a的喷出口以140毫升/分钟提供清洗水77并且以3升/分钟以15秒的时间从空气喷嘴760的喷嘴部761提供空气。其结果是,提供到环状的框架11的上表面的清洗水77因从旋转工作台711的旋转方向下游侧逆着移动而从空气喷嘴760的喷嘴部761提供的空气而暂时滞留并被排出到环状的框架11的外侧。因此,通过所滞留的清洗水来溶解附着在环状的框架11的上表面的水溶性树脂而提高清洗效果,如图8的(b)所示,能够在短时间内有效地将附着在环状的框架11的上表面的水溶性树脂去除。
如上述那样在作为半导体晶片10的加工面的正面10a上形成保护膜110,并且将附着在环状的框架11的上表面的水溶性树脂去除了之后,将旋转工作台711定位在图3所示的被加工物搬入/搬出位置,并解除对保持在旋转工作台711上的半导体晶片10的吸引保持。然后,旋转工作台711上的半导体晶片10被第1被加工物搬送单元16搬送到卡盘工作台3的吸附卡盘32上。此时,第1被加工物搬送单元16对经由粘合带12对半导体晶片10进行支承的环状的框架11的上表面进行吸引保持而将其搬送到卡盘工作台3上,由于附着在环状的框架11的上表面的水溶性树脂如上述那样被去除,所以解决了水溶性树脂如粘合剂那样进行作用而使环状的框架11不能从第1被加工物搬送单元16脱离的问题。
如上述的那样,在将经由粘合带12被环状的框架11支承的半导体晶片10搬送到卡盘工作台3的吸附卡盘32上之后,通过使未图示的吸引单元动作,将粘接有半导体晶片10的粘合带12侧吸引保持在该吸附卡盘32上。并且,通过夹具34将环状的框架11固定。此时,由于附着在环状的框架11的上表面的水溶性树脂如上述那样被去除,所以水溶性树脂不会如粘合剂那样进行作用而粘住夹具34。这样,通过未图示的移动单元将对半导体晶片10进行吸引保持的卡盘工作台3定位在配设于激光光线照射单元4的拍摄单元5的正下方。
当将卡盘工作台3定位在拍摄单元5的正下方时,通过拍摄单元5和未图示的控制单元来执行图形匹配等图像处理,并完成激光光线照射位置的对准,其中,该图形匹配等图像处理用于进行形成在半导体晶片10的第1方向的分割预定线101与激光光线照射单元4的聚光器42的对位,该激光光线照射单元4沿着分割预定线101照射激光光线。并且,对于形成在半导体晶片10上的相对于上述第1方向呈直角延伸的分割预定线101,也同样地完成激光光线照射位置的对准。此时,虽然在半导体晶片10的形成有分割预定线101的正面10a上形成有保护膜110,但在保护膜110不透明的情况下能够利用红外线进行拍摄而从正面进行对准。
如以上所述的那样,对形成在保持于卡盘工作台3上的半导体晶片10的分割预定线101进行检测并进行了激光光线照射位置的对准之后,如图9的(a)所示将卡盘工作台3移动至照射激光光线的激光光线照射单元4的聚光器42所位于的激光光线照射区域,并将规定的分割预定线101定位在聚光器42的正下方。此时,如图9的(a)所示,半导体晶片10被定位成分割预定线101的一端(图9的(a)中的左端)位于聚光器42的正下方。另外,在图9的(a)和(b)中,省略了对环状的框架11进行固定的夹具34。接着,一边从激光光线照射单元4的聚光器42照射脉冲激光光线一边使卡盘工作台3按照图9的(a)中箭头X1所示的方向以规定的加工进给速度移动。然后,如图9的(b)所示,在分割预定线101的另一端(图9的(b)中的右端)到达了聚光器42的正下方位置之后,停止脉冲激光光线的照射并且停止卡盘工作台3的移动。在该激光加工槽形成工序中,将脉冲激光光线的聚光点P对位在分割预定线101的正面附近。
通过实施上述的激光加工槽形成工序,如图9的(c)所示,在半导体晶片10的分割预定线101上形成激光加工槽120。此时,即使因激光光线的照射而产生碎屑130,该碎屑130也被保护膜110遮挡,不会附着于器件102和键合点等。然后,对半导体晶片10的全部的分割预定线101实施上述的激光加工槽形成工序。
在沿着半导体晶片10的全部的分割预定线101实施了上述的激光加工槽形成工序之后,对半导体晶片10进行保持的卡盘工作台3返回到最初对半导体晶片10进行吸引保持的位置,在这里解除对半导体晶片10的吸引保持并且解除夹具34对环状的框架11的固定。然后,半导体晶片10被第2被加工物搬送单元17搬送到构成保护膜覆盖装置7的旋转工作台711的吸附卡盘711a上并被该吸附卡盘711a吸引保持。此时,第2被加工物搬送单元17对经由粘合带12对半导体晶片10进行支承的环状的框架11的上表面进行吸引保持而将其搬送到构成保护膜覆盖装置7的旋转工作台711上,由于附着在环状的框架11的上表面的水溶性树脂如上述那样被去除,所以解决了水溶性树脂如粘合剂那样进行作用而使环状的框架11不能从第2被加工物搬送单元17脱离的问题。另外,如图2和图3所示,水溶性树脂提供单元74的树脂提供喷嘴741和清洗水提供单元75的清洗喷嘴751以及上部空气提供单元76的空气喷嘴760被定位在与旋转工作台711的上方分离的待机位置。
在将加工后的半导体晶片10保持在保护膜覆盖装置7的旋转工作台711上之后,执行对半导体晶片10进行清洗的清洗工序。即,将旋转工作台711定位在作业位置,并且对清洗水提供单元75的未图示的电动机进行驱动而将清洗喷嘴751的喷嘴部751a的喷出口定位在保持于旋转工作台711上的半导体晶片10的中心部上方。然后,一边使旋转工作台711以例如800rpm的旋转速度旋转一边从喷嘴部751a的喷出口喷出例如0.2MPa左右的清洗水,对半导体晶片10的作为加工面的正面10a进行清洗。此时,未图示的电动机进行驱动而使从清洗水提供喷嘴751的喷嘴部751a的喷出口喷出的清洗水在所需的角度范围内摇动,该所需的角度范围从相当于旋转工作台711所保持的半导体晶片10的中心的位置直到相当于外周部的位置为止。其结果是,由于覆盖在半导体晶片10的正面10a上的保护膜110如上述那样由水溶性的树脂形成,所以能够容易地洗去保护膜110并且还能将在激光加工时产生的碎屑130去除。
在上述的清洗工序结束之后,执行对被清洗的半导体晶片10进行干燥的干燥工序。即,将清洗喷嘴751定位在待机位置,并使旋转工作台711以例如3000rpm的旋转速度旋转15秒左右,由此,对半导体晶片10的正面进行旋转干燥。
如上述那样,在实施了清洗工序和干燥工序之后,停止旋转工作台711的旋转,并将旋转工作台711定位在图3所示的被加工物搬入/搬出位置,并且解除对保持在旋转工作台711上的半导体晶片10的吸引保持。接着,旋转工作台711上的加工后的半导体晶片10被第1被加工物搬送单元16搬送到配设于暂放部14a的暂放单元14上。通过被加工物搬出单元15将搬送到暂放单元14上的加工后的半导体晶片10收纳在盒13的规定的位置。
Claims (1)
1.一种保护膜覆盖方法,利用水溶性树脂在晶片的正面上覆盖保护膜,该晶片在正面上呈格子状形成有多条分割预定线并且在由该多条分割预定线划分出的多个区域内形成有器件,该保护膜覆盖方法的特征在于,
具有如下的工序:
晶片支承工序,在具有对晶片进行收容的开口的环状的框架的该开口中经由粘合带而粘接晶片的背面,从而利用环状的框架对晶片进行支承;
晶片保持工序,在经由粘合带将晶片支承在环状的框架上的状态下以晶片的正面作为上侧而保持在旋转工作台上;
保护膜覆盖工序,一边使旋转工作台旋转一边向旋转工作台所保持的晶片的正面中央区域滴下水溶性树脂,从而在晶片的正面上覆盖由水溶性树脂形成的保护膜;以及
水溶性树脂去除工序,将在该保护膜覆盖工序中飞散到环状的框架的上表面的水溶性树脂去除,
在该水溶性树脂去除工序中,一边使旋转工作台旋转一边将清洗喷嘴定位在旋转工作台所保持的环状的框架的上表面而向环状的框架的上表面提供清洗水,并且将空气喷嘴与该清洗喷嘴相邻地定位在旋转方向下游侧,提供空气以使该空气逆着被提供到环状的框架的上表面的清洗水的移动而使清洗水暂时滞留并且将清洗水排出到环状的框架的外侧。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015223930A JP2017092379A (ja) | 2015-11-16 | 2015-11-16 | 保護膜被覆方法 |
JP2015-223930 | 2015-11-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106952871A true CN106952871A (zh) | 2017-07-14 |
Family
ID=58691343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610997931.2A Pending CN106952871A (zh) | 2015-11-16 | 2016-11-11 | 保护膜覆盖方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9761442B2 (zh) |
JP (1) | JP2017092379A (zh) |
KR (1) | KR20170057145A (zh) |
CN (1) | CN106952871A (zh) |
SG (1) | SG10201609327VA (zh) |
TW (1) | TW201737326A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112017995A (zh) * | 2019-05-31 | 2020-12-01 | 株式会社迪思科 | 处理工件的方法和处理工件的*** |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6837709B2 (ja) * | 2016-10-14 | 2021-03-03 | 株式会社ディスコ | デバイスウェーハのレーザ加工方法 |
JP1607703S (zh) * | 2017-02-07 | 2021-06-21 | ||
JP7108424B2 (ja) * | 2018-02-20 | 2022-07-28 | 株式会社ディスコ | 保護膜形成装置 |
JP7023575B2 (ja) * | 2018-03-02 | 2022-02-22 | 株式会社ディスコ | 洗浄方法 |
JP7122684B2 (ja) * | 2018-03-08 | 2022-08-22 | パナソニックIpマネジメント株式会社 | 塗布装置 |
JP7068028B2 (ja) * | 2018-05-09 | 2022-05-16 | 株式会社ディスコ | ウェーハの分割方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010227867A (ja) * | 2009-03-27 | 2010-10-14 | Disco Abrasive Syst Ltd | 樹脂塗布装置 |
CN102013404A (zh) * | 2009-09-07 | 2011-04-13 | 株式会社迪思科 | 保护膜覆盖方法和保护膜覆盖装置 |
CN103962274A (zh) * | 2013-02-01 | 2014-08-06 | 株式会社迪思科 | 树脂覆盖装置 |
JP2015149385A (ja) * | 2014-02-06 | 2015-08-20 | 株式会社ディスコ | ウェーハの加工方法 |
CN104952771A (zh) * | 2014-03-27 | 2015-09-30 | 芝浦机械电子株式会社 | 基板处理装置以及基板处理方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004322168A (ja) | 2003-04-25 | 2004-11-18 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP4523252B2 (ja) * | 2003-09-08 | 2010-08-11 | 株式会社ディスコ | 半導体ウエーハの加工方法および加工装置 |
JP5607387B2 (ja) * | 2010-03-02 | 2014-10-15 | 株式会社ディスコ | レーザー加工装置 |
JP2014154874A (ja) * | 2013-02-07 | 2014-08-25 | Toshiba Corp | 膜厚モニタ装置、研磨装置および膜厚モニタ方法 |
-
2015
- 2015-11-16 JP JP2015223930A patent/JP2017092379A/ja active Pending
-
2016
- 2016-10-12 TW TW105132906A patent/TW201737326A/zh unknown
- 2016-11-08 SG SG10201609327VA patent/SG10201609327VA/en unknown
- 2016-11-10 US US15/348,448 patent/US9761442B2/en active Active
- 2016-11-11 CN CN201610997931.2A patent/CN106952871A/zh active Pending
- 2016-11-14 KR KR1020160150988A patent/KR20170057145A/ko unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010227867A (ja) * | 2009-03-27 | 2010-10-14 | Disco Abrasive Syst Ltd | 樹脂塗布装置 |
CN102013404A (zh) * | 2009-09-07 | 2011-04-13 | 株式会社迪思科 | 保护膜覆盖方法和保护膜覆盖装置 |
CN103962274A (zh) * | 2013-02-01 | 2014-08-06 | 株式会社迪思科 | 树脂覆盖装置 |
JP2015149385A (ja) * | 2014-02-06 | 2015-08-20 | 株式会社ディスコ | ウェーハの加工方法 |
CN104952771A (zh) * | 2014-03-27 | 2015-09-30 | 芝浦机械电子株式会社 | 基板处理装置以及基板处理方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112017995A (zh) * | 2019-05-31 | 2020-12-01 | 株式会社迪思科 | 处理工件的方法和处理工件的*** |
Also Published As
Publication number | Publication date |
---|---|
TW201737326A (zh) | 2017-10-16 |
US9761442B2 (en) | 2017-09-12 |
JP2017092379A (ja) | 2017-05-25 |
US20170140928A1 (en) | 2017-05-18 |
KR20170057145A (ko) | 2017-05-24 |
SG10201609327VA (en) | 2017-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106952871A (zh) | 保护膜覆盖方法 | |
CN103586585B (zh) | 激光加工装置 | |
KR102336955B1 (ko) | 웨이퍼의 가공 방법 | |
CN101740419B (zh) | 保护膜的覆盖方法和保护膜覆盖装置 | |
JP5385060B2 (ja) | 保護膜被覆方法および保護膜被覆装置 | |
JP6004675B2 (ja) | レーザー加工装置 | |
CN103962274B (zh) | 树脂覆盖装置 | |
KR102317696B1 (ko) | 보호막 피복 방법 및 보호막 피복 장치 | |
CN101623685A (zh) | 保护膜覆盖装置和激光加工装置 | |
JP2008006379A (ja) | 保護被膜の被覆方法 | |
JP6397270B2 (ja) | 切削装置 | |
JP4666583B2 (ja) | 保護被膜の被覆方法 | |
JP2011176035A (ja) | ウエーハの洗浄方法 | |
JP6199582B2 (ja) | 保護膜形成装置 | |
JP5706235B2 (ja) | レーザー加工装置 | |
JP6305750B2 (ja) | 静電気除去装置を備えた加工機 | |
JP2012151270A (ja) | スピンナー洗浄装置 | |
JP5788716B2 (ja) | 粉塵排出装置 | |
JP5887164B2 (ja) | ウエーハのレーザー加工方法 | |
JP2006041399A (ja) | ウエーハの分割方法および分割装置 | |
JP5904848B2 (ja) | 保護膜形成装置 | |
JP2010245092A (ja) | ウエーハの洗浄方法 | |
JP6276982B2 (ja) | スピンナー洗浄装置 | |
JP2014217805A (ja) | 液状樹脂被覆装置 | |
JP2007180185A (ja) | 洗浄装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170714 |