CN106952732A - 复合薄膜染料敏化太阳能电池及其制作方法 - Google Patents
复合薄膜染料敏化太阳能电池及其制作方法 Download PDFInfo
- Publication number
- CN106952732A CN106952732A CN201710121806.XA CN201710121806A CN106952732A CN 106952732 A CN106952732 A CN 106952732A CN 201710121806 A CN201710121806 A CN 201710121806A CN 106952732 A CN106952732 A CN 106952732A
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- Prior art keywords
- film layer
- tio
- dssc
- optoelectronic pole
- conductive glass
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- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000010408 film Substances 0.000 claims abstract description 119
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 230000005693 optoelectronics Effects 0.000 claims abstract description 46
- 239000011521 glass Substances 0.000 claims abstract description 39
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000975 dye Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 230000001235 sensitizing effect Effects 0.000 claims abstract description 21
- 239000003792 electrolyte Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 239000002002 slurry Substances 0.000 claims description 35
- 238000001914 filtration Methods 0.000 claims description 23
- 239000000843 powder Substances 0.000 claims description 23
- 238000005245 sintering Methods 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 15
- 229920000604 Polyethylene Glycol 200 Polymers 0.000 claims description 14
- 238000000498 ball milling Methods 0.000 claims description 14
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 13
- 239000011265 semifinished product Substances 0.000 claims description 12
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 239000004570 mortar (masonry) Substances 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 238000005303 weighing Methods 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- KAIPKTYOBMEXRR-UHFFFAOYSA-N 1-butyl-3-methyl-2h-imidazole Chemical class CCCCN1CN(C)C=C1 KAIPKTYOBMEXRR-UHFFFAOYSA-N 0.000 claims description 3
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical class [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000000047 product Substances 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 claims 2
- NMOJAXCSURVGEY-UHFFFAOYSA-N N#CC#N.[S] Chemical compound N#CC#N.[S] NMOJAXCSURVGEY-UHFFFAOYSA-N 0.000 claims 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 claims 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 claims 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 4
- 206010070834 Sensitisation Diseases 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- ZJYYHGLJYGJLLN-UHFFFAOYSA-N guanidinium thiocyanate Chemical class SC#N.NC(N)=N ZJYYHGLJYGJLLN-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2036—Light-sensitive devices comprising an oxide semiconductor electrode comprising mixed oxides, e.g. ZnO covered TiO2 particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2045—Light-sensitive devices comprising a semiconductor electrode comprising elements of the fourth group of the Periodic System (C, Si, Ge, Sn, Pb) with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2054—Light-sensitive devices comprising a semiconductor electrode comprising AII-BVI compounds, e.g. CdTe, CdSe, ZnTe, ZnSe, with or without impurities, e.g. doping materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710121806.XA CN106952732B (zh) | 2017-03-02 | 2017-03-02 | 复合薄膜染料敏化太阳能电池及其制作方法 |
Applications Claiming Priority (1)
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CN201710121806.XA CN106952732B (zh) | 2017-03-02 | 2017-03-02 | 复合薄膜染料敏化太阳能电池及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN106952732A true CN106952732A (zh) | 2017-07-14 |
CN106952732B CN106952732B (zh) | 2019-04-12 |
Family
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Family Applications (1)
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CN201710121806.XA Expired - Fee Related CN106952732B (zh) | 2017-03-02 | 2017-03-02 | 复合薄膜染料敏化太阳能电池及其制作方法 |
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CN (1) | CN106952732B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108826546A (zh) * | 2018-07-21 | 2018-11-16 | 江燕婷 | 一种冷库用新型工业冷风机 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1947863A (zh) * | 2005-10-13 | 2007-04-18 | 同济大学 | 锡钛酸钡铁电薄膜的制备方法 |
CN101423244A (zh) * | 2008-11-19 | 2009-05-06 | 西北大学 | 一种掺锡钛酸钡纳米粉体的制备方法 |
CN103280323A (zh) * | 2013-05-06 | 2013-09-04 | 中国科学院化学研究所 | 锡掺杂染料敏化TiO2纳晶薄膜光电极及其制备方法与应用 |
CN103523826A (zh) * | 2013-10-16 | 2014-01-22 | 黑龙江大学 | 锡掺杂二氧化钛的制备方法 |
CN106587989A (zh) * | 2016-11-15 | 2017-04-26 | 江苏大学 | 一种高介电性能晶界层陶瓷电容器介质 |
-
2017
- 2017-03-02 CN CN201710121806.XA patent/CN106952732B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1947863A (zh) * | 2005-10-13 | 2007-04-18 | 同济大学 | 锡钛酸钡铁电薄膜的制备方法 |
CN101423244A (zh) * | 2008-11-19 | 2009-05-06 | 西北大学 | 一种掺锡钛酸钡纳米粉体的制备方法 |
CN103280323A (zh) * | 2013-05-06 | 2013-09-04 | 中国科学院化学研究所 | 锡掺杂染料敏化TiO2纳晶薄膜光电极及其制备方法与应用 |
CN103523826A (zh) * | 2013-10-16 | 2014-01-22 | 黑龙江大学 | 锡掺杂二氧化钛的制备方法 |
CN106587989A (zh) * | 2016-11-15 | 2017-04-26 | 江苏大学 | 一种高介电性能晶界层陶瓷电容器介质 |
Non-Patent Citations (1)
Title |
---|
MIN ZHONG等: "Charge recombination reduction in dye-sensitized solar cells by depositing ultrapure TiO2 nanoparticles on "inert" BaTiO3 films", 《MATERIALS SCIENCE AND ENGINEERING B》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108826546A (zh) * | 2018-07-21 | 2018-11-16 | 江燕婷 | 一种冷库用新型工业冷风机 |
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CN106952732B (zh) | 2019-04-12 |
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Effective date of registration: 20190211 Address after: 401320 Longhai Harbour District 9-4, 3 Longhai Avenue, Longzhou Bay, Banan District, Chongqing Applicant after: Chongqing steady Technology Co., Ltd. Address before: 410205 Room 3219, Pixel Building, 109 Guyuan Road, Changsha High-tech Development Zone, Hunan Province Applicant before: Hunan Yun Ping Environmental Protection Technology Co., Ltd. |
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Effective date of registration: 20190311 Address after: No. 300 Zhihui Road, Kirin Science and Technology Innovation Park, Nanjing, Jiangsu Province, 211100 Applicant after: Nanjing Yuzhi Intelligent Technology Co., Ltd. Address before: 401320 Longhai Harbour District 9-4, 3 Longhai Avenue, Longzhou Bay, Banan District, Chongqing Applicant before: Chongqing steady Technology Co., Ltd. |
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Effective date of registration: 20201027 Address after: 221000 ho Qiao village, Ho Qiao Town, Copper Mt. District, Xuzhou, Jiangsu, China Patentee after: XUZHOU KAINUO MACHINERY Co.,Ltd. Address before: No. 300 Zhihui Road, Kirin Science and Technology Innovation Park, Nanjing, Jiangsu Province, 211100 Patentee before: NANJING YUZHI INTELLIGENT TECHNOLOGY Co.,Ltd. |
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Granted publication date: 20190412 Termination date: 20210302 |
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