CN106873278A - 阵列基板及其制作方法、显示装置 - Google Patents
阵列基板及其制作方法、显示装置 Download PDFInfo
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- CN106873278A CN106873278A CN201710276838.7A CN201710276838A CN106873278A CN 106873278 A CN106873278 A CN 106873278A CN 201710276838 A CN201710276838 A CN 201710276838A CN 106873278 A CN106873278 A CN 106873278A
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- organic film
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000010408 film Substances 0.000 claims description 173
- 239000010409 thin film Substances 0.000 claims description 42
- 239000010410 layer Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 22
- 239000011368 organic material Substances 0.000 description 19
- 238000002161 passivation Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000012212 insulator Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004425 Makrolon Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 229910052976 metal sulfide Inorganic materials 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- YEYVZGOAJMYGKQ-UHFFFAOYSA-N [Au].[Zn].[In] Chemical compound [Au].[Zn].[In] YEYVZGOAJMYGKQ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- VRVAZSINCAZFLH-UHFFFAOYSA-N oxygen(2-) tin(4+) titanium(4+) Chemical compound [O--].[O--].[Ti+4].[Sn+4] VRVAZSINCAZFLH-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
一种阵列基板及其制作方法、显示装置。该阵列基板包括:衬底基板;栅极线,设置在衬底基板上且沿第一方向延伸;数据线,设置在衬底基板上且沿第二方向延伸;栅极线和数据线彼此交叉以限定像素区;有机膜,设置在栅极线与数据线上以及像素区内;以及像素电极,设置在有机膜上且在像素区内,其中,位于数据线正上方的有机膜具有第一厚度,位于像素电极正下方的有机膜具有第二厚度,第一厚度大于第二厚度。采用该阵列基板既可以降低功耗,也可以提高像素的开口率以及避免像素电极的搭接不良,从而达到改善画面显示的目的。
Description
技术领域
本发明至少一个实施例涉及一种阵列基板及其制作方法、显示装置。
背景技术
随着液晶显示行业的发展,有机膜技术已被广泛的应用于液晶显示面板产品中。有机膜技术的应用,可以明显减小公共电极和像素电极分别与数据线之间的寄生电容,从而可以降低功耗。
发明内容
本发明的至少一实施例提供一种阵列基板及其制作方法、显示装置。采用该阵列基板既可以降低功耗,也可以提高像素的开口率以及避免像素电极的搭接不良,从而达到改善画面显示的目的。
本发明的至少一实施例提供一种阵列基板,包括:衬底基板;栅极线,设置在衬底基板上且沿第一方向延伸;数据线,设置在衬底基板上且沿第二方向延伸;栅极线和数据线彼此交叉以限定像素区;有机膜,设置在栅极线与数据线上以及像素区内;以及像素电极,设置在有机膜上且在像素区内,其中,位于数据线正上方的有机膜具有第一厚度,位于像素电极正下方的有机膜具有第二厚度,第一厚度大于第二厚度。
例如,在本发明的一个实施例中,阵列基板还包括:位于像素区内的薄膜晶体管,薄膜晶体管位于有机膜与衬底基板之间,像素电极通过有机膜中的过孔连接到薄膜晶体管的漏极,薄膜晶体管正上方的有机膜的厚度等于第一厚度。
例如,在本发明的一个实施例中,栅极线正上方的有机膜的厚度等于第一厚度。
例如,在本发明的一个实施例中,第二厚度与第一厚度的比例不小于0.5。
例如,在本发明的一个实施例中,像素区还设置有公共电极,公共电极设置在有机膜远离衬底基板的一侧,且在垂直于衬底基板的方向上,公共电极与数据线和栅极线的至少之一有交叠。
例如,在本发明的一个实施例中,公共电极设置在像素电极远离衬底基板的一侧或设置在像素电极与有机膜之间。
例如,在本发明的一个实施例中,公共电极为透明导电电极。
本发明的至少一实施例提供一种阵列基板的制作方法,包括:在衬底基板上形成沿第一方向延伸的栅极线以及沿第二方向延伸的数据线,栅极线和数据线彼此交叉以限定像素区;在栅极线和数据线上以及像素区形成有机膜;以及在有机膜上形成像素电极,像素电极位于像素区内,其中,位于数据线正上方的有机膜具有第一厚度,位于像素电极正下方的有机膜具有第二厚度,第一厚度大于第二厚度。
例如,在本发明的一个实施例中,还包括:在像素区形成薄膜晶体管,且薄膜晶体管形成于有机膜与衬底基板之间,像素电极通过有机膜中的过孔连接到薄膜晶体管的漏极,薄膜晶体管正上方的有机膜的厚度等于第一厚度。
例如,在本发明的一个实施例中,有机膜采用半色调掩模工艺形成。
例如,在本发明的一个实施例中,还包括:在像素区形成公共电极,其中,公共电极形成在有机膜远离衬底基板的一侧,且在垂直于衬底基板的方向上,公共电极与数据线和栅极线的至少之一有交叠。
例如,在本发明的一个实施例中,公共电极形成在像素电极远离衬底基板的一侧或形成在像素电极与有机膜之间。
本发明的至少一实施例提供一种显示装置,包括本发明实施例提供的任一种阵列基板。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例,而非对本发明的限制。
图1a为一种阵列基板的剖面示意图;
图1b为图1a示出的阵列基板的剖面示意图;
图1c为图1b示出的阵列基板的像素电极断裂示意图;
图2a为本发明一实施例提供的阵列基板的平面示意图;
图2b为图2a示出的阵列基板沿AB方向的剖面示意图;
图2c为图2a示出的阵列基板沿CD方向的剖面示意图;
图2d为图2a示出的阵列基板沿CD方向的剖面示意图;
图3为本发明一实施例提供的阵列基板的制作方法示意图。
附图标记:10-衬底基板;11-数据线;12-钝化层;20-像素区;21-像素电极;210-裂痕;22-薄膜晶体管;221-漏极;222-源极;223-有源层;224-栅极绝缘层;225-栅极;23-公共电极;30-有机膜;31-过孔;100-衬底基板;101-栅极线;102-数据线;103-钝化层;110-像素区;111-像素电极;112-薄膜晶体管;1121-漏极;1122-源极;1123-有源层;1124-栅极绝缘层;1125-栅极;113-公共电极;120-有机膜;121-过孔。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例的附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
除非另外定义,本发明使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。
在研究中,本申请的发明人发现:在液晶显示装置中应用有机膜技术会带来一些不良,例如,由于设置的有机膜厚度较大,从而导致有机膜的过孔较大,进而影响了像素的开口率;另外,有机膜厚度较大也会导致有机膜的过孔较深,从而引起像素电极在过孔中的搭接不良,导致产生像素暗点。
图1a为一种阵列基板的剖面示意图,如图1a所示,该阵列基板包括数据线11、由数据线11和栅极线(图1a未示出)彼此交叉以限定的像素区20、设置在数据线11与栅极线上以及像素区20内的有机膜30以及设置在有机膜30上以及像素区20内的像素电极21。一般显示区中的有机膜的厚度一致,即设置在数据线11正上方的有机膜30的厚度与设置在像素区20的有机膜30的厚度是相同的。需要说明的是,数据线的厚度相对于有机膜的厚度较小,这里可以不考虑数据线的厚度。图1a示意性的示出有机膜在显示区的各位置厚度一致,有机膜远离数据线的上表面示意为平面,但实际工艺中,有机膜远离数据线的上表面不完全是平面,有机膜在覆盖数据线的位置有起伏。同理,后续提到的薄膜晶体管正上方的有机膜即为像素区内的有机膜,该有机膜远离薄膜晶体管的上表面也示意为平面。
图1b为图1a示出的阵列基板的剖面示意图,如图1b所示,该阵列基板还包括衬底基板10。设置在衬底基板10上的像素区20还包括公共电极23以及薄膜晶体管22。该薄膜晶体管22包括与像素电极21电连接的漏极221,与数据线11电连接的源极222,与栅极线电连接的栅极225,以及有源层223和栅极绝缘层224。图1b以阵列基板为高级超维场转换技术(ADS)中的阵列基板为例进行描述,即像素电极21设置在公共电极23远离衬底基板10的一侧,且像素电极21与公共电极23之间设置有钝化层12。
如图1b所示,由于有机膜30的厚度较大,即有机膜30沿图中所示的X方向的尺寸较大,使得有机膜30的过孔31的孔径较大,从而降低了像素的开口率。
图1c为图1b示出的阵列基板的像素电极断裂示意图,如图1c所示,由于有机膜30的厚度较大,使得过孔31沿X方向的深度较深,导致像素电极21在过孔31处与漏极221搭接的部分发生断裂,产生了裂痕210,从而使显示区产生暗点,造成显示不良。
本发明的实施例提供一种阵列基板及其制作方法、显示装置。该阵列基板包括:衬底基板;设置在衬底基板上且沿第一方向延伸的栅极线;设置在衬底基板上且沿第二方向延伸的数据线;栅极线和数据线彼此交叉以限定像素区;设置在栅极线与数据线上以及像素区内的有机膜;以及设置在有机膜上且在像素区内的像素电极。位于数据线正上方的有机膜具有第一厚度,位于像素电极正下方的有机膜具有第二厚度,第一厚度大于第二厚度。采用该阵列基板既可以降低功耗,也可以提高像素的开口率以及避免像素电极的搭接不良,从而达到改善画面显示的目的。
下面结合附图对本发明实施例提供的阵列基板及其制作方法、显示装置进行描述。
实施例一
本实施例提供一种阵列基板,图2a为本实施例提供的阵列基板的平面示意图,图2b为图2a示出的阵列基板沿AB方向的剖面示意图。如图2a和图2b所示,该阵列基板包括:衬底基板100;设置在衬底基板100上且沿第一方向延伸的栅极线101;设置在衬底基板100上且沿第二方向延伸的数据线102;由栅极线101和数据线102彼此交叉以限定的像素区110;设置在栅极线101与数据线102上以及像素区110内的有机膜120;以及设置在有机膜120上且在像素区110内的像素电极111。这里的“第一方向”指图2a中示出的Y方向,“第二方向”指图2a中示出的Z方向,本实施例不限于此,例如,还可以第一方向为Z方向,第二方向为Y方向。本实施例以第一方向和第二方向互相垂直为例进行描述,但不限于此。
如图2b所示,位于数据线102正上方(即沿X方向)的有机膜120具有第一厚度H1,位于像素电极111正下方(即沿与X平行的方向)的有机膜120具有第二厚度H2,第一厚度H1大于第二厚度H2。采用本实施例提供的阵列基板可以提高像素的开口率以及避免像素电极的搭接不良,从而达到改善画面显示的目的。
需要说明的是,数据线的厚度相对于有机膜的厚度较小,这里可以不考虑数据线的厚度。图2b中的有机膜120以及数据线102的厚度只是示意性的。
需要说明的是,本实施例中的像素电极在衬底基板上正投影与数据线(栅极线)在衬底基板上的正投影沿Y(Z)方向没有交叠。例如,像素电极在衬底基板上正投影与数据线(栅极线)在衬底基板上的正投影沿Y(Z)方向有间隔;或者沿X方向,像素电极的边缘与数据线(栅极线)的边缘对齐,本实施例对此不作限制。
例如,有机膜120的材料可以包括聚酰亚胺、聚酰胺、聚碳酸酯、环氧树脂等中的一种或几种的组合等具有较好透光性的材料。本实施例包括但不限于此,例如,有机膜120的材料还可以是包括光致刻蚀剂的具有较好透光性的材料等。本实施例设置在栅极线与数据线上以及像素区内的有机膜可以有效避免像素电极与数据线(栅极线)之间的信号的串扰,减小了像素电极与数据线(栅极线)之间的寄生电容,从而可以降低功耗。
例如,衬底基板100的材料可以由聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜中的一种或多种材料制成,本实施例包括但不限于此。
例如,数据线102的材料可以包括铝、铂、银、金、镍、铬和铜等中的一种或几种的组合,本实施例包括但不限于此。
例如,栅极线101可以包括金属氧化物材料,例如可以包括由氧化铟锡、氧化铟锌、氧化锌、氧化铟和氧化铟镓构成的组中的一种或多种组合。本实施例不限于此,例如,还可以包括钼、钛、铝、铜等金属材料中的一种或多种的组合等。
例如,如图2b所示,相邻的像素电极111之间的有机膜120可以形成隔离墙以防止相邻像素电极111之间的电场的影响。
例如,图2c为图2a示出的阵列基板沿CD方向的剖面示意图。如图2c所示,阵列基板还包括位于像素区110内的薄膜晶体管112,薄膜晶体管112位于有机膜120与衬底基板100之间。薄膜晶体管112包括漏极1121,像素电极111通过有机膜120中的过孔121连接到薄膜晶体管112的漏极1121。薄膜晶体管112还包括与数据线102电连接的源极1122,与栅极线101电连接的栅极1125,有源层1123以及栅极绝缘层1124。
例如,如图2c所示,薄膜晶体管112正上方(沿X方向)的有机膜120的厚度等于第一厚度H1,即薄膜晶体管112正上方的有机膜120的厚度与数据线102正上方的有机膜120的厚度相同,且大于像素电极111正下方的有机膜120的厚度。需要说明的是,像素电极正下方的有机膜的厚度即为位于过孔区以外的像素电极的正下方的有机膜的厚度。
在本实施例提供的阵列基板的像素区中,仅设置在像素电极正下方的有机膜的厚度较小,从而可以减小有机膜中过孔的孔径以及过孔的深度。因此,当像素电极在通过有机膜中的过孔连接到薄膜晶体管的漏极时,可以避免像素电极的搭接不良,即可以避免像素电极在过孔中的搭接部分产生裂痕。另外,减小过孔的孔径还可以提高像素的开口率。
需要说明的是,本实施例不限于此,例如,薄膜晶体管正上方的有机膜的厚度也可以与数据线正上方的有机膜的厚度不相同。例如,薄膜晶体管正上方的有机膜的厚度也可以与像素电极正下方的有机膜的厚度相同等。例如,薄膜晶体管正上方也可以不设置有机膜。只要像素电极正下方的有机膜的厚度小于数据线正上方的有机膜的厚度即可。
例如,栅极线101正上方的有机膜120的厚度等于第一厚度H1,即栅极线101正上方的有机膜120的厚度与数据线102正上方的有机膜120的厚度相同,本实施例包括但不限于此。
例如,第二厚度H2与第一厚度H1的比例不小于0.5,即设置在像素电极111正下方的有机膜120相对于数据线102正上方的有机膜120减薄的厚度的尺寸不超过第一厚度H1的1/2。例如,有机膜120沿X方向的厚度可以包括1.8μm-2.2μm,本实施例包括但不限于此。
在本实施例提供的阵列基板的整个显示区中有机膜的厚度不一致,即仅设置在像素电极正下方的有机膜的厚度较小,从而可以提高像素的开口率以及避免像素电极的搭接不良,进而达到改善画面显示的目的。
例如,如图2c所示,像素区110还设置有公共电极113,公共电极113设置在有机膜120远离衬底基板100的一侧,且在垂直于衬底基板100的方向上,即沿X方向,公共电极113与数据线102和栅极线101的至少之一有交叠。
例如,如图2c所示,公共电极113设置在像素电极111与有机膜120之间,在像素电极111与公共电极113之间还设置有钝化层103。本示例以阵列基板为高级超维场转换技术(ADS)中的阵列基板为例进行描述。
例如,钝化层103可以包括金属氧化物、金属硫化物或金属氮化物等无机材料,本实施对此不作限制。例如,金属氧化物可以包括氧化钙、氧化锌、氧化铜、二氧化钛、二氧化锡等;金属硫化物可以包括硫化铁、硫化铜、硫化锌、二硫化锡等;金属氮化物可以包括氮化硅、氮化铝等,本实施例包括但不限于此。
例如,图2d为图2a示出的阵列基板沿CD方向的剖面示意图。如图2d所示,公共电极113设置在像素电极111远离衬底基板100的一侧,在像素电极111与公共电极113之间还设置有钝化层103。本示例以该阵列基板为高开口率高级超维场转换技术(HADS)中的阵列基板为例进行描述。本实施例不限于ADS和HADS产品中的阵列基板,还可以是其他应用有机膜技术的阵列基板。
例如,公共电极113为透明导电电极。例如,公共电极113的材料可以包括透明导电氧化物。例如,公共电极113的材料可以包括氧化铟锡、氧化铟锌、氧化锌、氧化铟和氧化铟镓中的组合或至少一种,本发明实施例对此不作限制。例如,公共电极也可为金属电极。
本实施例中在垂直于衬底基板的方向上,公共电极与数据线和栅极线的至少之一有交叠。因此,设置在栅极线与数据线上以及像素区内的有机膜可以有效避免公共电极与数据线(栅极线)之间的信号的串扰。并且位于数据线(栅极线)正上方的有机膜的厚度较厚,可以有效减小公共电极与数据线(栅极线)之间的寄生电容,从而可以降低功耗。
实施例二
本实施例提供一种阵列基板的制作方法,图3为本实施例提供的阵列基板的制作方法示意图,如图3所示,具体步骤包括:
S201:在衬底基板上形成沿第一方向延伸的栅极线以及沿第二方向延伸的数据线,栅极线和数据线彼此交叉以限定像素区。
例如,在衬底基板上的像素区形成薄膜晶体管的栅极,该栅极与栅极线电连接。在栅极上利用化学气相沉积法沉积栅极绝缘层以覆盖栅极、栅极线等,然后对栅极绝缘层进行图案化处理以形成所需的图形。例如,栅极绝缘层的材料可以包括氧化物、氮化物或氮氧化合物等材料,本实施例对此不作限制。
例如,在栅极绝缘层上形成半导体层,并利用有源层掩模板对半导体层进行图案化以形成有源层。例如,采用干法刻蚀半导体层以图案化形成有源层,本实施例包括但不限于此。
例如,在有源层上形成层间绝缘层,并刻蚀形成用于连接源极和漏极与有源层的接触孔。
例如,利用源漏极掩模板通过构图工艺在接触孔形成源极和漏极,形成的源极与数据线电连接。例如,源极和漏极可以采用铝、铜、铬、钼、钛等金属材料中的任一种或者几种组合的合金,本实施例对此不作限制。
S202:在栅极线和数据线上以及像素区形成有机膜。
S203:在有机膜上形成像素电极,且像素电极位于像素区内。
例如,在栅极线和数据线上以及像素区形成有机材料膜层,利用半色调掩模工艺对有机材料膜层进行图案化,使位于数据线正上方的有机材料膜层的厚度大于位于像素区(除薄膜晶体管)的有机材料膜层的厚度,以形成所需的有机膜。
例如,有机材料膜层的材料可以包括聚酰亚胺、聚酰胺、聚碳酸酯、环氧树脂等中的一种或几种的组合等具有较好透光性的材料,本实施例包括但不限于此。例如,有机材料膜层的材料还可以是包括光致刻蚀剂的材料等。
例如,当有机材料膜层采用包括光致刻蚀剂的具有较好透光性的材料时,利用半色调掩模工艺直接对有机材料膜层进行图案化以形成具有不同厚度的有机膜,即,使位于数据线正上方的有机材料膜层的厚度大于位于像素区(除薄膜晶体管)的有机材料膜层的厚度。在一个示例中,先形成有机材料膜层,然后利用半色调掩模对所述有机膜层材料进行曝光,在需要形成过孔的位置形成完全曝光区域,在需要减薄的区域(即,像素电极下方的区域)形成部分曝光区域,在数据线正上方和/或栅极线正上方不进行曝光。然后,再对进行过曝光处理的有机材料膜层进行显影,以形成不同厚度的有机膜以及其中的过孔。本示例以有机材料膜层采用包括正性光致刻蚀剂的材料为例进行描述,本示例不限于此,例如还可以是用包括负性光致刻蚀剂的材料。
例如,当有机材料膜层为一般透光有机材料时,在有机材料层上形成光刻胶层,然后利用半色调掩模工艺对光刻胶层图案化以形成具有不同厚度的光刻胶层。例如,使位于数据线正上方的光刻胶层的厚度大于位于像素区(除薄膜晶体管)的光刻胶层的厚度,然后对光刻胶层进行灰化处理,使位于数据线正上方的光刻胶层减薄,位于像素区(除薄膜晶体管)的光刻胶层完全灰化而除去。对位于像素区(除薄膜晶体管)没有被光刻胶层覆盖的有机材料膜层进行刻蚀以减薄该位置有机材料膜层的厚度,然后剥离数据线正上方的光刻胶层以形成所需的有机膜。
例如,在形成有机膜之后,在像素区的有机膜上形成导电层,利用像素电极掩模板图案化导电层以形成所需的像素电极。例如,形成像素电极的材料可以包括透明的铟锌金属氧化物等,本实施例对此不作限制。
需要说明的是,位于像素区(除薄膜晶体管)的有机材料膜层即为在像素电极正下方的有机材料膜层。本实施例中形成在数据线正上方的有机膜具有第一厚度,形成在像素电极正下方的有机膜具有第二厚度,第一厚度大于第二厚度。因此,采用本实施例提供的阵列基板的制作方法制作的阵列基板可以提高像素的开口率以及避免像素电极的搭接不良,从而达到改善画面显示的目的。
需要说明的是,本实施例对形成不同厚度的有机膜的过程不作限制,只要形成在数据线正上方的有机膜的厚度大于形成在像素电极正下方的有机膜的厚度即可。
例如,本实施例中像素电极在衬底基板上的正投影与数据线(栅极线)在衬底基板上的正投影没有交叠。由于第一厚度大于第二厚度,因此,相邻的像素电极之间的有机膜可以形成隔离墙以防止相邻像素电极之间的电场的影响。
例如,形成在薄膜晶体管正上方的有机膜的厚度与形成在数据线正上方的有机膜的厚度相同,即形成在薄膜晶体管正上方的有机膜的厚度大于形成在像素电极正下方的有机膜的厚度。
例如,像素电极通过有机膜中的过孔连接到薄膜晶体管的漏极。在本实施例的像素区中,仅形成在像素电极正下方的有机膜的厚度较小,从而可以减小有机膜中的过孔的孔径以及过孔沿垂直于衬底基板的方向的深度。因此,当像素电极在通过有机膜中的过孔连接到薄膜晶体管的漏极时,可以避免像素电极的搭接不良,即可以避免像素电极在过孔中的搭接部分产生裂痕。另外,减小过孔的孔径还可以提高像素的开口率。
需要说明的是,本实施例不限于此,例如,形成在薄膜晶体管正上方的有机膜的厚度与形成在数据线正上方的有机膜的厚度也可以不相同。例如,形成在薄膜晶体管正上方的有机膜与形成在像素电极正下方的有机膜可以具有第二厚度,即整个像素区具有相同的厚度,且小于数据线正上方的有机膜的厚度。例如,薄膜晶体管正上方也可以不形成有机膜。
例如,栅极线正上方的有机膜的厚度等于第一厚度,即栅极线正上方的有机膜的厚度与数据线正上方的有机膜的厚度相同,本实施例包括但不限于此。
例如,有机膜沿垂直于衬底基板的方向的厚度可以包括1.8μm-2.2μm,本实施例包括但不限于此。
例如,本实施例中形成在栅极线与数据线上以及像素区内的有机膜可以有效避免像素电极与数据线(栅极线)之间的信号的串扰,减小了像素电极与数据线(栅极线)之间的寄生电容,从而可以降低功耗。
在本实施例提供的阵列基板的整个显示区中有机膜的厚度不一致,即仅设置在像素电极正下方的有机膜的厚度较小,从而可以提高像素的开口率以及避免像素电极的搭接不良,进而达到改善画面显示的目的。
例如,像素区还包括有公共电极,公共电极形成在有机膜远离衬底基板的一侧,且在垂直于衬底基板的方向上,公共电极与数据线和栅极线的至少之一有交叠。
例如,在本实施例的一示例中,在形成像素电极之前还包括,在有机膜上形成公共电极层,并利用公共电极掩模板图案化形成所需的公共电极图案,然后在公共电极上形成钝化层以覆盖公共电极。本示例以形成的阵列基板为高级超维场转换技术(ADS)中的阵列基板为例进行描述。
例如,钝化层可以包括金属氧化物、金属硫化物或金属氮化物等无机材料,本实施对此不作限制。
例如,在本实施例的另一示例中,在像素电极上形成钝化层以覆盖像素电极,然后在钝化层上形成公共电极层,并利用公共电极掩模板图案化形成所需的公共电极图案。本示例以形成的阵列基板为高开口率高级超维场转换技术(HADS)中的阵列基板为例进行描述。本实施例不限于ADS和HADS产品中的阵列基板,还可以是其他应用有机膜技术的阵列基板。
例如,公共电极为透明导电电极。例如,公共电极的材料可以包括透明导电氧化物,本发明实施例对此不作限制。例如,公共电极也可为金属电极。
本实施例中在垂直于衬底基板的方向上,公共电极与数据线和栅极线的至少之一有交叠。因此,形成在栅极线与数据线上以及像素区内的有机膜可以有效避免公共电极与数据线(栅极线)之间的信号的串扰。并且位于数据线(栅极线)正上方的有机膜的厚度较厚,可以有效减小公共电极与数据线(栅极线)之间的寄生电容,从而可以降低功耗。
实施例三
本实施例提供一种显示装置,包括本发明实施例提供的任一种阵列基板。采用该显示装置既可以降低功耗,也可以提高像素的开口率以及避免像素电极的搭接不良,从而达到改善画面显示的目的。
例如,该显示装置可以为液晶显示装置以及包括该液晶显示装置的电视、数码相机、手机、手表、平板电脑、笔记本电脑、导航仪等任何具有显示功能的产品或者部件,本实施例不限于此。
有以下几点需要说明:
(1)除非另作定义,本发明实施例以及附图中,同一标号代表同一含义。
(2)本发明实施例附图中,只涉及到与本发明实施例涉及到的结构,其他结构可参考通常设计。
(3)为了清晰起见,在用于描述本发明的实施例的附图中,层或区域被放大。可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”,或者可以存在中间元件。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (13)
1.一种阵列基板,包括:
衬底基板;
栅极线,设置在所述衬底基板上且沿第一方向延伸;
数据线,设置在所述衬底基板上且沿第二方向延伸;
所述栅极线和所述数据线彼此交叉以限定像素区;
有机膜,设置在所述栅极线与所述数据线上以及所述像素区内;以及
像素电极,设置在所述有机膜上且在所述像素区内,
其中,位于所述数据线正上方的所述有机膜具有第一厚度,位于所述像素电极正下方的所述有机膜具有第二厚度,所述第一厚度大于所述第二厚度。
2.根据权利要求1所述的阵列基板,还包括,位于所述像素区内的薄膜晶体管,所述薄膜晶体管位于所述有机膜与所述衬底基板之间,所述像素电极通过所述有机膜中的过孔连接到所述薄膜晶体管的漏极,所述薄膜晶体管正上方的所述有机膜的厚度等于所述第一厚度。
3.根据权利要求1所述的阵列基板,其中,所述栅极线正上方的所述有机膜的厚度等于所述第一厚度。
4.根据权利要求1-3任一项所述的阵列基板,其中,所述第二厚度与所述第一厚度的比例不小于0.5。
5.根据权利要求1所述的阵列基板,其中,所述像素区还设置有公共电极,所述公共电极设置在所述有机膜远离所述衬底基板的一侧,且在垂直于所述衬底基板的方向上,所述公共电极与所述数据线和所述栅极线的至少之一有交叠。
6.根据权利要求5所述的阵列基板,其中,所述公共电极设置在所述像素电极远离所述衬底基板的一侧或设置在所述像素电极与所述有机膜之间。
7.根据权利要求5或6所述的阵列基板,其中,所述公共电极为透明导电电极。
8.一种显示装置,包括权利要求1-7任一项所述的阵列基板。
9.一种阵列基板的制作方法,包括:
在衬底基板上形成沿第一方向延伸的栅极线以及沿第二方向延伸的数据线,所述栅极线和所述数据线彼此交叉以限定像素区;
在所述栅极线和所述数据线上以及所述像素区形成有机膜;以及
在所述有机膜上形成像素电极,所述像素电极位于所述像素区内,
其中,位于所述数据线正上方的所述有机膜具有第一厚度,位于所述像素电极正下方的所述有机膜具有第二厚度,所述第一厚度大于所述第二厚度。
10.根据权利要求9所述的阵列基板的制作方法,还包括:
在所述像素区形成薄膜晶体管,且所述薄膜晶体管形成于所述有机膜与所述衬底基板之间,所述像素电极通过所述有机膜中的过孔连接到所述薄膜晶体管的漏极,所述薄膜晶体管正上方的所述有机膜的厚度等于所述第一厚度。
11.根据权利要求10所述的阵列基板的制作方法,其中,所述有机膜采用半色调掩模工艺形成。
12.根据权利要求10所述的阵列基板的制作方法,还包括:在所述像素区形成公共电极,其中,所述公共电极形成在所述有机膜远离所述衬底基板的一侧,且在垂直于所述衬底基板的方向上,所述公共电极与所述数据线和所述栅极线的至少之一有交叠。
13.根据权利要求12所述的阵列基板的制作方法,其中,所述公共电极形成在所述像素电极远离所述衬底基板的一侧或形成在所述像素电极与所述有机膜之间。
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WO2019061737A1 (zh) * | 2017-09-28 | 2019-04-04 | 深圳市华星光电半导体显示技术有限公司 | 液晶显示面板的制作方法及液晶显示面板 |
CN112859463A (zh) * | 2021-01-19 | 2021-05-28 | 京东方科技集团股份有限公司 | 一种显示面板及显示装置 |
WO2024060240A1 (zh) * | 2022-09-23 | 2024-03-28 | 京东方科技集团股份有限公司 | 显示面板与制造显示面板的方法 |
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