CN106803478A - 一种GaN纳米结构阵列生长方法 - Google Patents
一种GaN纳米结构阵列生长方法 Download PDFInfo
- Publication number
- CN106803478A CN106803478A CN201611113575.XA CN201611113575A CN106803478A CN 106803478 A CN106803478 A CN 106803478A CN 201611113575 A CN201611113575 A CN 201611113575A CN 106803478 A CN106803478 A CN 106803478A
- Authority
- CN
- China
- Prior art keywords
- gan
- growth
- temperature
- substrate
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000012010 growth Effects 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000002070 nanowire Substances 0.000 claims abstract description 19
- 238000000859 sublimation Methods 0.000 claims abstract description 15
- 230000008022 sublimation Effects 0.000 claims abstract description 15
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 11
- 239000010980 sapphire Substances 0.000 claims abstract description 11
- 239000012159 carrier gas Substances 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 238000003491 array Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000004907 flux Effects 0.000 claims abstract description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 9
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 238000004821 distillation Methods 0.000 claims description 4
- 238000005092 sublimation method Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910000238 buergerite Inorganic materials 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009830 intercalation Methods 0.000 description 2
- 230000002687 intercalation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02499—Monolayers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
一种制备GaN纳米结构阵列的方法，利用CVD设备和石墨烯***层及低温GaN缓冲层升华法生长GaN纳米结构阵列；衬底采用蓝宝石、硅或石英玻璃、GaN/蓝宝石(硅)，衬底清洗后，先覆盖单层或多层石墨烯薄膜；将覆有石墨烯薄膜的衬底放入CVD管式炉生长***中，开始GaN纳米结构生长；先在低温下生长GaN缓冲层，然后升温至高温开始生长GaN纳米阵列；缓冲层生长温度：500–1000℃，纳米线阵列生长温度1000‑1150℃；高纯N2作为载气，总N2载气流量0.5‑5slm。
Description
技术领域
本发明涉及一种用升华法生长GaN纳米结构阵列的方法。
背景技术
以GaN及InGaN、AlGaN合金材料为主的III-V族氮化物材料(又称GaN基材料)是近几年来国际上倍受重视的新型半导体材料。GaN基材料是直接带隙宽禁带半导体材料，具有1.9-6.2eV之间连续可变的直接带隙，优异的物理、化学稳定性，高饱和电子漂移速度，高击穿场强和高热导率等优越性能，在短波长半导体光电子器件和高频、高压、高温微电子器件制备等方面具有重要的应用，用于制造比如蓝、紫、紫外波段发光器件、探测器件，高温、高频、高场大功率器件，场发射器件，抗辐射器件，压电器件等。
一维体系的纳米材料是可以有效传输电子和光学激子的最小维度结构，也是纳米机械器件和纳米电子器件的最基本结构单元。III-V族氮化物材料作为重要半导体材料的优良特性使得一维氮化物纳米结构在微纳光电器件、光电探测器件、电子器件、环境和医学等领域具有更广泛的的潜在应用前景，因此，制备性能优异、高质量的一维氮化物纳米结构及特性研究就成为当前国际、国内研究的前沿课题。
III-V族氮化物材料的生长有很多种方法，如金属有机物气相外延(MOCVD)、高温高压合成体单晶、分子束外延(MBE)、升华法以及氢化物气相外延(HVPE)等。纳米结构的制备主要有各向异性可控生长法、VLS(Vapor–Liquid–Solid)和SLS(Solution–Liquid–Solid)机制生长法、模板辅助生长法、表面活性剂法、纳米粒子自组装及物理或化学方法剪切等。GaN纳米结构的生长可以采用多种方式如MOCVD、MBE等获得，但是此类设备价格成本高，源材料价格高昂。
由于石墨烯具有与纤锌矿GaN的c面相似的六角结构，且在超过1000℃的高温环境下，表面仍能保持杰出的物理和化学稳定性，为GaN材料的成核提供了条件，利于外延生长GaN纳米阵列。同时以石墨烯作插层，可以方便移植GaN纳米材料到各种柔性衬底上，实现可弯曲形变的三维柔性LED。
本发明给出了一种采用金属镓做原材料，石墨烯薄膜做***层，用气相外延(CVD)设备升华法生长GaN纳米结构阵列的方法及工艺。
发明内容
本发明目的是：提出一种低成本的用金属镓做原材料，石墨烯薄膜做***层，用升华法生长优异GaN纳米结构阵列的方法。
本发明的技术方案是，一种制备GaN纳米结构阵列的方法，其特征是利用CVD设备和石墨烯***层及低温GaN缓冲层升华法生长GaN纳米结构阵列；衬底采用蓝宝石、硅或石英玻璃、GaN/蓝宝石(硅)，衬底清洗后，先覆盖单层或多层石墨烯薄膜；将覆有石墨烯薄膜的衬底放入CVD管式炉生长***中，开始GaN纳米结构生长；先在低温下生长GaN缓冲层，然后升温至高温开始生长GaN纳米阵列；缓冲层生长温度：500–1000℃，纳米线阵列生长温度1000-1150℃；高纯N2作为载气，总N2载气流量0.5-5slm。
GaN纳米结构生长温度尤其是：1000-1150℃，缓冲层生长温度尤其是700-900℃。金属镓熔点29.8℃，加热升华出镓蒸汽，Ga源采用常规的高纯金属镓加热升华镓蒸汽和高纯NH3反应生成GaN。高纯氨气作为氮源，NH3流量：100–2000sccm；缓冲层和纳米阵列生长时间分别为10-60秒及1-60分钟。
衬底(蓝宝石、石英玻璃、硅等)上覆盖单层或多层石墨烯薄膜；石墨烯覆盖到衬底上，在一定温度下烘干以使得石墨烯和衬底之间紧密接触。温度100-150℃，时间10-20分钟。
GaN缓冲层常压升华法生长，金属Ga作为镓源，镓升华蒸汽和NH3反应，GaN缓冲层生长温度500-1000℃。时间为10-60秒。
由于石墨烯具有与纤锌矿GaN的c面相似的六角结构，且在超过1000℃的高温环境下，表面仍能保持杰出的物理和化学稳定性，为GaN材料的成核提供了条件，利于外延生长GaN纳米阵列。同时以石墨烯作插层，可以方便移植GaN纳米材料到各种柔性衬底上，实现可弯曲形变的三维柔性LED。二维石墨烯表面与其上的外延膜之间是以范德瓦耳斯势键合，受失配位错及应力的影响较弱。所以直接生长纳米棒的取向杂乱无章。在范德瓦耳斯外延机制下，缓冲层对纳米棒的成核点和生长模式的影响是关键问题，它直接影响所获得的纳米棒的形貌、分布的有序程度以及质量，并最终影响后续器件工艺的成败。
在本发明中，在衬底上纳米线生长前的石墨烯***层上先低温外延GaN缓冲层，可以实现GaN纳米线的有序排列。本发明的技术方案为：通过在衬底上覆盖单层或多层石墨烯薄膜并低温在其上外延GaN缓冲层的方法，升华法生长GaN纳米结构阵列。
本发明有益效果：本发明给出了一种工艺简单、成本低廉的GaN纳米结构阵列生长方法和工艺，比采用三甲基镓等原料便宜很多。GaN纳米线有序排列，直径数十到数百纳米，且长度可以达到几十微米。GaN纳米线呈扁平带状结构，直径约400-500nm；提供给器件制作以最坚实的基础。
附图说明
图1为本发明实施例的产物电子扫描显微镜形貌照片。图中分别为：a)700℃下石墨烯/蓝宝石上的GaN缓冲层，表面平整；b)700℃石墨烯/蓝宝石上先生长GaN缓冲层再外延GaN纳米线，GaN纳米线呈扁平带状结构，直径约400-500nm；c)d)优化后的石墨烯/GaN/蓝宝石上缓冲层上再外延GaN纳米线，部分区域可以看到出现c向GaN纳米结构。
具体实施方式
本发明方法和工艺包括几个部分：单层或多层石墨烯薄膜在衬底上的覆盖；石墨烯上GaN低温缓冲层升华法生长；GaN纳米线阵列的升华法生长。
本发明技术实施方式之一，在蓝宝石衬底上升华法制备GaN纳米线阵列，包括下面几步：
蓝宝石衬底的清洗和处理。将样品依次在去离子水、乙醇和去离子水中进行超声清洗，除去表面残留的污染物，用氮气吹干。
将石墨烯薄膜转移覆盖至蓝宝石衬底表面，清洗，并去除转移过程中石墨烯/衬底上产生的气泡。本实施例选择单层和2-3层石墨烯薄膜。
将石墨烯/蓝宝石衬底在120℃空气气氛中烘干处理，时间15分钟。
将石墨烯/蓝宝石衬底放入CVD管式炉生长***中，开始GaN缓冲层生长。缓冲层生长温度：700℃；高纯氨气作为氮源，NH3流量200sccm；生长时间1分钟。缓冲层形貌见图1a。金属镓熔点温度29.8℃，加热时可升华出镓蒸汽。
继续升温至1100℃，生长20分钟。完成后降温取出样品，即获得GaN纳米线。采用优化条件生长GaN纳米结构阵列见图1d。
缓冲层生长温度：600或800℃均可；高纯(一般5N-6N)N2作为载气，总N2载气流量0.5-5slm；Ga源采用常规的高纯金属镓和高纯NH3反应生成GaN；高纯氨气作为氮源，NH3流量：100–2000sccm；生长时间1-60分钟。
常压升华法，金属Ga作为镓源，镓升华蒸汽和NH3(一般5N-6N)反应，纳米线生长温度100-1150℃。
Claims (5)
1.一种制备GaN纳米结构阵列的方法，其特征是利用CVD设备和石墨烯***层及低温GaN缓冲层升华法生长GaN纳米结构阵列；衬底采用蓝宝石、硅或石英玻璃、GaN/蓝宝石(硅)，衬底清洗后，先覆盖单层或多层石墨烯薄膜；将覆有石墨烯薄膜的衬底放入CVD管式炉生长***中，开始GaN纳米结构生长；先在低温下生长GaN缓冲层，然后升温至高温开始生长GaN纳米阵列；缓冲层生长温度：500–1000℃，纳米线阵列生长温度1000-1150℃；高纯N2作为载气，总N2载气流量0.5-5slm。
2.根据权利要求1所述的用升华法生长GaN纳米线，其特征是，采用常压升华法，金属Ga作为镓源，镓升华蒸汽和NH3反应，纳米线生长温度100-1150℃。
3.根据权利要求1所述的用升华法生长GaN纳米线，其特征是，GaN纳米结构生长温度尤其是：1000-1150℃，缓冲层生长温度尤其是700-900℃。
4.根据权利要求2所述的用升华法生长GaN纳米线，其特征是，Ga源采用常规的高纯金属镓，加热到镓镕点以上，升华镓蒸汽后和高纯NH3反应生成GaN；高纯氨气作为氮源，NH3流量：100–2000sccm；缓冲层和纳米阵列生长时间分别为10-60秒及1-60分钟。
5.根据权利要求1所述的用升华法生长GaN纳米线，其特征是，衬底(蓝宝石、石英玻璃、硅等)上覆盖单层或多层石墨烯薄膜；石墨烯覆盖到衬底上，在温度100-150℃烘干以使得石墨烯和衬底之间紧密接触，时间10-20分钟。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611113575.XA CN106803478B (zh) | 2016-12-05 | 2016-12-05 | 一种GaN纳米结构阵列生长方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611113575.XA CN106803478B (zh) | 2016-12-05 | 2016-12-05 | 一种GaN纳米结构阵列生长方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106803478A true CN106803478A (zh) | 2017-06-06 |
| CN106803478B CN106803478B (zh) | 2019-12-06 |
Family
ID=58985716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611113575.XA Active CN106803478B (zh) | 2016-12-05 | 2016-12-05 | 一种GaN纳米结构阵列生长方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106803478B (zh) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735866A (zh) * | 2018-07-20 | 2018-11-02 | 华南理工大学 | 生长在Si/石墨烯复合衬底上InN纳米柱外延片及其制备方法 |
| CN109003888A (zh) * | 2018-07-20 | 2018-12-14 | 华南理工大学 | 硅/石墨烯复合衬底上外延生长GaN纳米柱及制备方法 |
| CN109830413A (zh) * | 2019-01-11 | 2019-05-31 | 西安理工大学 | GaN微米棒阵列/石墨烯场发射阴极复合材料制备方法 |
| CN109980054A (zh) * | 2019-03-29 | 2019-07-05 | 北京石墨烯研究院 | 一种GaN纳米柱的制备方法以及一种LED器件 |
| CN110284198A (zh) * | 2019-07-22 | 2019-09-27 | 南京大学 | 一种控制GaN纳米线结构与形貌的分子束外延生长方法 |
| WO2021189523A1 (zh) * | 2020-03-24 | 2021-09-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种超柔性透明半导体薄膜及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101931035A (zh) * | 2009-06-23 | 2010-12-29 | 日本冲信息株式会社 | 氮化物半导体层分离方法、半导体器件和晶片及制造方法 |
| CN103477418A (zh) * | 2010-12-13 | 2013-12-25 | 挪威科技大学 | 石墨基板上的纳米线外延 |
| CN104409319A (zh) * | 2014-10-27 | 2015-03-11 | 苏州新纳晶光电有限公司 | 一种石墨烯基底上生长高质量GaN缓冲层的制备方法 |
-
2016
- 2016-12-05 CN CN201611113575.XA patent/CN106803478B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101931035A (zh) * | 2009-06-23 | 2010-12-29 | 日本冲信息株式会社 | 氮化物半导体层分离方法、半导体器件和晶片及制造方法 |
| CN103477418A (zh) * | 2010-12-13 | 2013-12-25 | 挪威科技大学 | 石墨基板上的纳米线外延 |
| CN104409319A (zh) * | 2014-10-27 | 2015-03-11 | 苏州新纳晶光电有限公司 | 一种石墨烯基底上生长高质量GaN缓冲层的制备方法 |
Non-Patent Citations (1)
| Title |
|---|
| AVINASH PATSHA等: "Growth of GaN Nanostructures On Graphene", 《INTERNATIONAL CONFERENCE ON NANOSCIENCE, ENGINEERING AND TECHNOLOGY》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735866A (zh) * | 2018-07-20 | 2018-11-02 | 华南理工大学 | 生长在Si/石墨烯复合衬底上InN纳米柱外延片及其制备方法 |
| CN109003888A (zh) * | 2018-07-20 | 2018-12-14 | 华南理工大学 | 硅/石墨烯复合衬底上外延生长GaN纳米柱及制备方法 |
| CN109830413A (zh) * | 2019-01-11 | 2019-05-31 | 西安理工大学 | GaN微米棒阵列/石墨烯场发射阴极复合材料制备方法 |
| CN109980054A (zh) * | 2019-03-29 | 2019-07-05 | 北京石墨烯研究院 | 一种GaN纳米柱的制备方法以及一种LED器件 |
| CN110284198A (zh) * | 2019-07-22 | 2019-09-27 | 南京大学 | 一种控制GaN纳米线结构与形貌的分子束外延生长方法 |
| WO2021012496A1 (zh) * | 2019-07-22 | 2021-01-28 | 南京大学 | 一种控制GaN纳米线结构与形貌的分子束外延生长方法 |
| WO2021189523A1 (zh) * | 2020-03-24 | 2021-09-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种超柔性透明半导体薄膜及其制备方法 |
| US11854802B2 (en) | 2020-03-24 | 2023-12-26 | Suzhou Institute Of Nano-Tech And Nano-Bionics (Sinano), Chinese Academy Of Sciences | Super-flexible transparent semiconductor film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106803478B (zh) | 2019-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106803478A (zh) | 一种GaN纳米结构阵列生长方法 | |
| CN107587190A (zh) | 一种制备GaN衬底材料的方法 | |
| Kente et al. | Gallium nitride nanostructures: Synthesis, characterization and applications | |
| KR100643083B1 (ko) | 산화아연 나노구조체 제조방법 및 이를 이용한 소자 | |
| CN112875742B (zh) | 氧化镓纳米管及其制备方法和应用 | |
| JP5876408B2 (ja) | ナノワイヤの作製方法 | |
| CN107093560B (zh) | 一种碘化铋二维材料、制备及其应用 | |
| CN107574479A (zh) | 一种多功能氢化物气相外延生长***及应用 | |
| JP2007217227A (ja) | ＧａＮ結晶の製造方法、ＧａＮ結晶基板および半導体デバイス | |
| CN104894640B (zh) | 一种石墨烯衬底上ZnO分级纳米阵列及其制备方法及应用 | |
| CN110010449B (zh) | 一种高效制备一维碳纳米管/二维过渡金属硫族化合物异质结的方法 | |
| Xue et al. | Review on nanomaterials synthesized by vapor transport method: growth and their related applications | |
| CN104966666A (zh) | 一种氮化物纳米线的制作方法 | |
| CN106757323B (zh) | 一种无应力InN纳米线生长方法 | |
| WO2014032465A1 (zh) | 一种GaN纳米线生长方法 | |
| Zhang et al. | Metal-catalyst-free epitaxial growth of aligned ZnO nanowires on silicon wafers at low temperature | |
| CN103757693B (zh) | 一种GaN纳米线的生长方法 | |
| Ho et al. | A reliable method to grow vertically-aligned silicon nanowires by a novel ramp-cooling process | |
| CN108695142B (zh) | 一种调控Graphene/SiC纳米异质结生长的方法 | |
| CN113990738A (zh) | 一种二维材料横向马赛克异质结阵列及其制备和应用 | |
| JP2004307253A (ja) | 半導体基板の製造方法 | |
| Shekari et al. | Optical and structural characterizations of GaN nanostructures | |
| CN114717535B (zh) | 一种在硅衬底上制备纤锌矿InGaN纳米棒的方法 | |
| Xu et al. | Synthetics of ZnO nanowires on GaN micro-pyramids by gold catalyst | |
| Kumar et al. | Temperature dependent growth of GaN nanowires using CVD technique |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |