CN106784219A - A kind of LED and preparation method thereof - Google Patents
A kind of LED and preparation method thereof Download PDFInfo
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- CN106784219A CN106784219A CN201710053445.XA CN201710053445A CN106784219A CN 106784219 A CN106784219 A CN 106784219A CN 201710053445 A CN201710053445 A CN 201710053445A CN 106784219 A CN106784219 A CN 106784219A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 55
- 230000004888 barrier function Effects 0.000 claims abstract description 98
- 239000004065 semiconductor Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims description 26
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 21
- 238000005240 physical vapour deposition Methods 0.000 claims description 20
- 230000005611 electricity Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 6
- 238000000407 epitaxy Methods 0.000 abstract description 4
- 238000011010 flushing procedure Methods 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 230000012010 growth Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002508 compound effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Led Devices (AREA)
Abstract
The invention discloses a kind of LED and preparation method thereof, the preparation method includes：Substrate is provided；Cushion is formed in the substrate surface；In the cushion n type semiconductor layer is formed away from the side of the substrate；In the n type semiconductor layer multiple quantum well layer is formed away from the side of the cushion；Electronic barrier layer is formed away from the side of the n type semiconductor layer in the multiple quantum well layer by PVD, the electronic barrier layer is AlN layers；In the electronic barrier layer p type semiconductor layer is formed away from the side of the multiple quantum well layer.Technical solution of the present invention after once multiple quantum well layer has been extended outward, with AlN layers of PVD layers long, as electronic barrier layer, then secondary epitaxy growing P-type semiconductor layer again, relatively thin electronic barrier layer can preferably stop electronics flushing effect, luminous efficiency can be effectively improved, while the operating voltage of LED can be reduced, and then power consumption is reduced.
Description
Technical field
The present invention relates to technical field of semiconductor device, in particular, it is related to a kind of LED and preparation method thereof.
Background technology
Light emitting diode (Light Emitting Diode, abbreviation LED) is a kind of semiconducting solid luminescent device, is utilized
Solid semiconductor chip, when two ends add forward voltage, can give off visible as luminescent material when electronics is with hole-recombination
Light.LED in circuit and electronic instrument as indicator lamp, or for constituting word or numerical monitor.
In traditional LED preparation methods, in order to improve luminous efficiency, stop electronics overflow, typically using Organometallic
Compound chemical gaseous phase deposition (Metal-organic Chemical Vapor Deposition, abbreviation MOCVD) technique is in volume
One layer of AlGaN or the composite construction related to AlGaN are formed on sub- well layer (Multiple Quantum Well, abbreviation MQW)
As electronic barrier layer (Electron blocking layer, abbreviation EBL).
In conventional fabrication method, electronic barrier layer is formed by MOCVD techniques, pre-reaction is stronger, can cause electronic blocking
The crystal mass of layer is poor, while the effect in order to improve electronic barrier layer, electronic barrier layer is often thicker, so as to cause LED
Operating voltage raise, influence luminous efficiency.,.
The content of the invention
In order to solve the above problems, the present invention is supplied to a kind of LED and preparation method thereof, using physical vapour deposition (PVD)
(Physical Vapor Deposition, abbreviation PVD) technique forms AlN layers as electronic barrier layer, and pre-reaction is less, shape
Uniform orientation into electronic barrier layer is good, and crystal mass is good, can effectively be stopped by the electronic barrier layer of lower thickness
Electronics overflow, reduces operating voltage, improves luminous efficiency.
To achieve these goals, the present invention provides following technical scheme：
A kind of preparation method of LED, the preparation method includes：
Substrate is provided；
Cushion is formed in the substrate surface；
In the cushion n type semiconductor layer is formed away from the side of the substrate；
In the n type semiconductor layer multiple quantum well layer is formed away from the side of the cushion；
Electronic barrier layer, institute are formed away from the side of the n type semiconductor layer in the multiple quantum well layer by PVD
Electronic barrier layer is stated for AlN layers；
In the electronic barrier layer p type semiconductor layer is formed away from the side of the multiple quantum well layer.
Preferably, in above-mentioned preparation method, the thickness range of the electronic barrier layer is 5nm-30nm, including end points
Value.
Preferably, in above-mentioned preparation method, before the n type semiconductor layer is formed, also include：
U-shaped GaN layer is formed on the cushion；
Wherein, the n type semiconductor layer is located at the U-shaped GaN layer surface.
Preferably, in above-mentioned preparation method, the thickness range of the U-shaped GaN layer is 0.5 μm -2 μm, including endpoint value；
The thickness range of the n type semiconductor layer is 1 μm -3 μm, including endpoint value.
Preferably, in above-mentioned preparation method, the cushion, the U-shaped GaN layer, described is grown by MOCVD techniques
N type semiconductor layer, the multiple quantum well layer and the p-type GaN.
Preferably, in above-mentioned preparation method, the multiple quantum well layer includes：At least one of which barrier layer and at least one of which trap
Layer；
When with barrier layer described in multilayer and/or with well layer described in multilayer, on the direction of the substrate,
The well layer is alternately distributed with the barrier layer.
Present invention also offers a kind of LED, the LED includes：
Substrate；
Positioned at the cushion of the substrate surface；
Deviate from the n type semiconductor layer of the substrate side positioned at the cushion；
Deviate from the multiple quantum well layer of the side of the cushion positioned at the n type semiconductor layer；
Deviate from the electronic barrier layer of the side of the n type semiconductor layer, the electronic blocking positioned at the multiple quantum well layer
Layer is AlN layers；
Deviate from the p type semiconductor layer of the side of the multiple quantum well layer positioned at the electronic barrier layer.
Preferably, in above-mentioned LED, the thickness range of the electronic barrier layer is 5nm-30nm, including endpoint value.
Preferably, in above-mentioned LED, also include：U-shaped GaN between the cushion and the n type semiconductor layer
Layer.
Preferably, in above-mentioned LED, the multiple quantum well layer includes：At least one of which barrier layer and at least one of which well layer；
When with barrier layer described in multilayer and/or with well layer described in multilayer, on the direction of the substrate,
The well layer is alternately distributed with the barrier layer.
By foregoing description, the LED preparation methods that technical solution of the present invention is provided include：Substrate is provided；Described
Substrate surface forms cushion；In the cushion n type semiconductor layer is formed away from the side of the substrate；In the N-type half
Conductor layer forms multiple quantum well layer away from the side of the cushion；The N is deviated from the multiple quantum well layer by PVD
The side of type semiconductor layer forms electronic barrier layer, and the electronic barrier layer is AlN layers；In the electronic barrier layer away from described
The side of multiple quantum well layer forms p type semiconductor layer.In the preparation method, after once multiple quantum well layer has been extended outward, adopt
AlN layers of layer is formed with PVD, as electronic barrier layer, then secondary epitaxy growing P-type semiconductor layer again.PVD
Technique can form the preferable electronic barrier layer of uniform orientation without pre-reaction, and crystal mass is good, meanwhile, AlN layers used as electricity
Sub- barrier layer, potential barrier is higher, and electronics flushing effect can be preferably stopped using relatively thin electronic barrier layer, can effectively improve
Luminous efficiency, and the operating voltage of LED can be reduced, and then reduce power consumption.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of schematic flow sheet of LED preparation methods provided in an embodiment of the present invention；
Fig. 2-Fig. 8 is a kind of tangent plane structural representation of LED preparation methods provided in an embodiment of the present invention；
Fig. 9 is the I-LOP curves and prior art preparation method of the LED that preparation method provided in an embodiment of the present invention makes
The contrast schematic diagram of the I-LOP curves of the LED of making；
Figure 10 is the I-V curve and prior art preparation method of the LED that preparation method provided in an embodiment of the present invention makes
The contrast schematic diagram of the I-V curve of the LED of making.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
It is below in conjunction with the accompanying drawings and specific real to enable the above objects, features and advantages of the present invention more obvious understandable
The present invention is further detailed explanation to apply mode.
With reference to Fig. 1, Fig. 1 is a kind of schematic flow sheet of LED preparation methods provided in an embodiment of the present invention, the preparation method
Including：
Step S11：As shown in Figure 2, there is provided substrate 11.
Substrate 11 can select the Sapphire Substrate in C faces.The thickness range of substrate 11 is 600 μm -700 μm, including end points
Value.Optimal, the substrate 11 of 650 μ m thicks can be selected to make LED.Using the substrate 11 of above-mentioned thickness range, can cause
The LED of making is while mechanical strength is ensured so that the thinner thickness of LED.
Step S12：As shown in figure 3, forming cushion 12 on the surface of the substrate 11.
Cushion 12 can be formed using MOCVD techniques.Cushion 12 can be AlN.The thickness range of cushion 12 can
Think 5 μm -50 μm, including endpoint value.Cushion 12 can provide nuclearing centre for the growth of GaN, the sapphire material in C faces
Substrate 11 carries out crystal orientation to nuclearing centre, it is ensured that the quality of crystal, and then improves the luminous efficiency of LED.
Step S13：As shown in FIG. 4 and 5, N-type half is formed away from the side of the substrate 11 in the cushion 12
Conductor layer 14.
Before n type semiconductor layer 14 is formed, as shown in figure 4, the preparation method also includes：Formed on the cushion 12
U-shaped GaN layer 13.Then, as shown in figure 5, forming n type semiconductor layer 14.The n type semiconductor layer 14 is located at the U-shaped GaN layer
13 surfaces.Wherein, the n type semiconductor layer 14 is the GaN layer of n-type doping, and the U-shaped GaN layer 13 is undoped GaN layer.
Undoped U-shaped GaN layer 13 aids in the growth of n type semiconductor layer 14, to ensure N-type semiconductor as transition zone
The radial direction quality of layer 14, it is ensured that the luminous efficiency of LED.U-shaped GaN layer 13 and N-type semiconductor can be formed using MOCVD techniques
Layer 14.The thickness range of the U-shaped GaN layer 13 is 0.5 μm -2 μm, including endpoint value.The thickness model of the n type semiconductor layer 14
It is 1 μm -3 μm to enclose, including endpoint value.Using the U-shaped GaN layer 13 of above-mentioned thickness range, thinner thickness, while can realize preferably
Auxiliary n type semiconductor layer 14 growth effect.
Step S14：As shown in fig. 6, forming Multiple-quantum away from the side of the cushion 12 in the n type semiconductor layer 14
Well layer 15.
The multiple quantum well layer 15 includes：At least one of which barrier layer and at least one of which well layer.When multiple quantum well layer 15 only has
When having one layer of barrier layer and one layer of well layer, well layer is located between barrier layer and n type semiconductor layer 14.When multiple quantum well layer 15 is with more
The layer barrier layer and/or during with well layer described in multilayer, on the direction of the substrate 11, the well layer with it is described
Barrier layer is alternately distributed.
Barrier layer can be the GaN layer of undoped GaN layer Al doping or the GaN of the Al and In that adulterates simultaneously
Layer.The barrier layer and well layer of multiple quantum well layer 15 can be formed by MOCVD techniques.
Optionally, in the embodiment of the present invention, multiple quantum well layer 15 has multilayer well layer and barrier layer, to improve electronics with sky
The recombination rate in cave, improves luminous efficiency.The superiors of multiple quantum well layer 15 are barrier layer.Orlop can be barrier layer or well layer.Its
In, orlop is arranged on the surface of n type semiconductor layer 14.
Step S15：As shown in fig. 7, by PVD in the multiple quantum well layer 15 away from the n type semiconductor layer
Side forms electronic barrier layer 16, and the electronic barrier layer 16 is AlN layers.
Step S16：As shown in figure 8, forming p-type away from the side of the multiple quantum well layer 15 in the electronic barrier layer 16
Semiconductor layer 17.
P type semiconductor layer 17 can be formed by MOCVD techniques.Wherein, the p type semiconductor layer 17 is p-type doping
GaN layer.
In the LED of structure shown in Fig. 8, when LED lights, n type semiconductor layer 14 provides electronics, and p type semiconductor layer 17 is carried
For hole, the two, being capable of radiating visible light in the compound tense of multiple quantum well layer 15.
In preparation method provided in an embodiment of the present invention, in MOCVD device by MOCVD techniques the surface of substrate 11 according to
After cushion 12, the U-shaped GaN layer 13, the n type semiconductor layer 14 and the multiple quantum well layer 15 described in secondary growth,
Electronic barrier layer 16 is formed on the surface of multiple quantum well layer 15 by PVD in PVD equipment, is finally passed through in MOCVD device
MOCVD techniques carry out secondary epitaxy, and p type semiconductor layer 17 is formed on the surface of electronic barrier layer 16.
In preparation method provided in an embodiment of the present invention, AlN is set between p type semiconductor layer 17 and multiple quantum well layer 15
The electronic barrier layer 16 of layer.AlN layers has potential barrier higher, can effectively stop first sidesway of the electronics by electronic barrier layer 16
Move the second side of electronic barrier layer 16, wherein, the first side be electronic barrier layer 16 towards the side of n type semiconductor layer 14, the
Two sides are electronic barrier layer 16 towards the side of p type semiconductor layer 17, improve the compound effect of electronics and hole in multiple quantum well layer
Rate, to improve luminous efficiency.
The thickness range for setting the electronic barrier layer 16 is 5nm-30nm, including endpoint value.Electronic blocking can be set
Layer is 10nm.Using the electronic barrier layer 16 of thickness range provided in an embodiment of the present invention, can effectively stop electronics by one
Side shifting is to the second side, while can also ensure that more hole reaches multiple quantum well layer 15 by electronic barrier layer 16, with electricity
Son is compound so that LED has luminous efficiency higher.
Conventional fabrication method generally by MOCVD techniques grow electronic barrier layer, electronic barrier layer be AlGaN or
AlN or the composite construction (such as AlGaN/AlInGaN/AlN/GaN) related to AlGaN.On the one hand, MOCVD techniques exist pre-
Reaction, causes the uniform orientation of electronic barrier layer poor, and influence electronic barrier layer stops the effect of electronics overflow.In order to ensure
Preferable electronic blocking effect, conventional method needs to set the electronic barrier layer of larger thickness, can cause the operating voltage liter of LED
Height, increases power consumption.And preparation method provided in an embodiment of the present invention, making AlN layers by PVD is used as electronic barrier layer,
Without pre-reaction, the uniform orientation of electronic barrier layer is made preferably, potential barrier is higher, using the electronic barrier layer reality of lower thickness
Now preferable electronic blocking effect, reduces LED power consumptions, and improve the luminous efficiency of LED.
The beneficial effect of the LED made with reference to specific product example explanation embodiment of the present invention preparation method：
In LED preparation methods provided in an embodiment of the present invention, when electronic barrier layer 16 is formed by PVD, PVD works
Skill parameter is set to：The amount ranges of Ar, N2, O2 are 0sccm-300sccm, including endpoint value, and sedimentation time is 15s-100s,
Including endpoint value, AlN layers of thickness is formed for 5nm-30nm, including endpoint value.
After electronic barrier layer, and then formation LED are grown under PVD parameter provided in an embodiment of the present invention, the hair of LED
The luminous efficiency of light efficiency and operating voltage with the LED of traditional use MOCVD techniques making electronic barrier layer and work
Voltage-contrast experimental example is respectively as shown in Fig. 9 and Figure 10.
With reference to Fig. 9, Fig. 9 is the I-LOP curves and prior art of the LED that preparation method provided in an embodiment of the present invention makes
The contrast schematic diagram of the I-LOP curves of the LED that preparation method makes.Wherein, curve A is using system provided in an embodiment of the present invention
Make the I-LOP curves of the LED of method making, curve B is the I-LOP curves of the LED made using prior art preparation method.
In Fig. 9, transverse axis represents electric current I, and unit is mA, and the longitudinal axis represents brightness LOP, and unit is mW.As shown in Figure 9, this hair
The LED that the preparation method that bright embodiment is provided makes works electric compared with the LED that prior art preparation method makes in identical
Flow down, LED prepared by preparation method provided in an embodiment of the present invention has larger brightness.
And from curve in Fig. 9, in the normal current margins of LED, with the increase of operating current, the present invention
The scope of the brightness of the LED that the brightness of LED prepared by the preparation method that embodiment is provided makes beyond prior art preparation method
It is bigger.
Therefore, as shown in Figure 9, the LED that prepared by preparation method provided in an embodiment of the present invention has luminous efficiency higher.
With reference to Figure 10, Figure 10 is the I-V curve and prior art of the LED that preparation method provided in an embodiment of the present invention makes
The contrast schematic diagram of the I-V curve of the LED that preparation method makes.Wherein, curve D is using making provided in an embodiment of the present invention
The I-V curve of the LED that method makes, curve B is the I-VP curves of the LED made using prior art preparation method.
In Figure 10, transverse axis represents electric current I, and unit is mA, and the longitudinal axis represents voltage V, and unit is mV.As shown in Figure 10, this hair
The LED that the preparation method that bright embodiment is provided makes works electric compared with the LED that prior art preparation method makes in identical
Flow down, LED prepared by preparation method provided in an embodiment of the present invention needs less voltage.
And from curve in Figure 10, in the normal current margins of LED, with the increase of operating current, this hair
Model of the brightness of LED prepared by the preparation method that bright embodiment is provided less than the brightness of the LED that prior art preparation method makes
Enclose bigger.
Therefore, as shown in Figure 10, the LED that prepared by preparation method provided in an embodiment of the present invention has lower work electricity
Pressure, power consumption is smaller.
Based on above-described embodiment, another embodiment of the present invention has been also provided to a kind of LED, and the LED uses above-mentioned making side
It is prepared by method.
The LED structure as shown in figure 8, including：Substrate 11；Positioned at the cushion 12 on the surface of the substrate 11；Positioned at described
N type semiconductor layer 14 of the cushion 12 away from the side of the substrate 11；Deviate from the cushion positioned at the n type semiconductor layer 14
The multiple quantum well layer 15 of 12 side；Deviate from the electronics of the side of the n type semiconductor layer 14 positioned at the multiple quantum well layer 15
Barrier layer 16, the electronic barrier layer 16 is AlN layers；Positioned at the electronic barrier layer 16 away from the one of the multiple quantum well layer 15
The p type semiconductor layer 17 of side.
Electronic barrier layer 16 is formed by PVD.Optionally, the thickness range of the electronic barrier layer 16 is 5nm-
30nm, including endpoint value.As shown in figure 8, the LED also includes：Between the cushion 12 and the n type semiconductor layer 14
U-shaped GaN layer 13.
Substrate 11 can select the Sapphire Substrate in C faces.The thickness range of substrate 11 is 600 μm -700 μm, including end points
Value.Optimal, the substrate 11 of 650 μ m thicks can be selected to make LED.Using the substrate 11 of above-mentioned thickness range, can cause
The LED of making is while mechanical strength is ensured so that the thinner thickness of LED.
Cushion 12 can be AlN.The thickness range of cushion 12 can be 5 μm -50 μm, including endpoint value.Cushion
12 can provide nuclearing centre for the growth of GaN, and the substrate 11 of the sapphire material in C faces carries out crystal orientation to nuclearing centre,
Ensure the quality of crystal, and then improve the luminous efficiency of LED.
The thickness range of the U-shaped GaN layer 13 is 0.5 μm -2 μm, including endpoint value.Using the U-shaped of above-mentioned thickness range
GaN layer 13, thinner thickness, while the effect of preferably auxiliary n type semiconductor layer 14 growth can be realized.The N-type semiconductor
The thickness range of layer 14 is 1 μm -3 μm, including endpoint value.
The multiple quantum well layer 15 includes：At least one of which barrier layer and at least one of which well layer；When with barrier layer described in multilayer
And/or during with well layer described in multilayer, on the direction of the substrate 11, the well layer replaces point with the barrier layer
Cloth.When multiple quantum well layer 15 only has one layer of barrier layer and one layer of well layer, well layer be located at barrier layer and n type semiconductor layer 14 it
Between.Barrier layer can be the GaN layer of undoped GaN layer Al doping or the GaN layer of the Al and In that adulterates simultaneously.Can be with
The barrier layer and well layer of multiple quantum well layer 15 are formed by MOCVD techniques.
Barrier layer can be the GaN layer of undoped GaN layer Al doping or the GaN of the Al and In that adulterates simultaneously
Layer.The barrier layer and well layer of multiple quantum well layer 15 can be formed by MOCVD techniques.
As described above, the cushion 12, institute are grown by MOCVD techniques successively on the surface of substrate 11 in MOCVD device
After stating U-shaped GaN layer 13, the n type semiconductor layer 14 and the multiple quantum well layer 15, existed by PVD in PVD equipment
The surface of multiple quantum well layer 15 forms electronic barrier layer 16, finally carries out secondary epitaxy by MOCVD techniques in MOCVD device,
P type semiconductor layer 17 is formed on the surface of electronic barrier layer 16.
LED provided in an embodiment of the present invention, using PVD make AlN layers as electronic barrier layer, potential barrier is higher,
There can be preferable electronic blocking effect using relatively thin thickness, reduce power consumption, improve the luminous efficiency of LED.And electricity
The uniform orientation on sub- barrier layer is preferable, it is possible to increase electronic blocking effect, improves luminous efficiency.
The beneficial effect contrast experiment example of LED provided in an embodiment of the present invention and tradition LED may be referred to above-described embodiment
Description, will not be repeated here.
Each embodiment is described by the way of progressive in this specification, and what each embodiment was stressed is and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.For being made disclosed in embodiment
For method, because it is corresponding with LED disclosed in embodiment, so description is fairly simple, related part makes referring to LED
Embodiment of the method relevant portion is illustrated.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or uses the present invention.
Various modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, the present invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The scope most wide for causing.
Claims (10)
1. a kind of preparation method of LED, it is characterised in that including：
Substrate is provided；
Cushion is formed in the substrate surface；
In the cushion n type semiconductor layer is formed away from the side of the substrate；
In the n type semiconductor layer multiple quantum well layer is formed away from the side of the cushion；
Electronic barrier layer, the electricity are formed away from the side of the n type semiconductor layer in the multiple quantum well layer by PVD
Sub- barrier layer is AlN layers；
In the electronic barrier layer p type semiconductor layer is formed away from the side of the multiple quantum well layer.
2. preparation method according to claim 1, it is characterised in that the thickness range of the electronic barrier layer is 5nm-
30nm, including endpoint value.
3. preparation method according to claim 1, it is characterised in that before the n type semiconductor layer is formed, also wrap
Include：
U-shaped GaN layer is formed on the cushion；
Wherein, the n type semiconductor layer is located at the U-shaped GaN layer surface.
4. preparation method according to claim 3, it is characterised in that the thickness range of the U-shaped GaN layer is 0.5 μm of -2 μ
M, including endpoint value；
The thickness range of the n type semiconductor layer is 1 μm -3 μm, including endpoint value.
5. preparation method according to claim 3, it is characterised in that the cushion, described is grown by MOCVD techniques
U-shaped GaN layer, the n type semiconductor layer, the multiple quantum well layer and the p-type GaN.
6. preparation method according to claim 5, it is characterised in that the multiple quantum well layer includes：At least one of which barrier layer
And at least one of which well layer；
It is described on the direction of the substrate when with barrier layer described in multilayer and/or with well layer described in multilayer
Well layer is alternately distributed with the barrier layer.
7. a kind of LED, it is characterised in that including：
Substrate；
Positioned at the cushion of the substrate surface；
Deviate from the n type semiconductor layer of the substrate side positioned at the cushion；
Deviate from the multiple quantum well layer of the side of the cushion positioned at the n type semiconductor layer；
Deviate from the electronic barrier layer of the side of the n type semiconductor layer positioned at the multiple quantum well layer, the electronic barrier layer is
AlN layers；
Deviate from the p type semiconductor layer of the side of the multiple quantum well layer positioned at the electronic barrier layer.
8. LED according to claim 7, it is characterised in that the thickness range of the electronic barrier layer is 5nm-30nm, bag
Include endpoint value.
9. LED according to claim 7, it is characterised in that also include：Positioned at the cushion and the N-type semiconductor
U-shaped GaN layer between layer.
10. LED according to claim 7, it is characterised in that the multiple quantum well layer includes：At least one of which barrier layer and
At least one of which well layer；
It is described on the direction of the substrate when with barrier layer described in multilayer and/or with well layer described in multilayer
Well layer is alternately distributed with the barrier layer.
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