CN106784053A - A kind of N-type selective emitter double-side cell and its processing method - Google Patents
A kind of N-type selective emitter double-side cell and its processing method Download PDFInfo
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- CN106784053A CN106784053A CN201710090233.9A CN201710090233A CN106784053A CN 106784053 A CN106784053 A CN 106784053A CN 201710090233 A CN201710090233 A CN 201710090233A CN 106784053 A CN106784053 A CN 106784053A
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- 238000003672 processing method Methods 0.000 title abstract description 6
- 239000011159 matrix material Substances 0.000 claims abstract description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 16
- 239000011574 phosphorus Substances 0.000 claims abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 15
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- 238000000034 method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
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- 239000002002 slurry Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 7
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Substances BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 230000009021 linear effect Effects 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910015845 BBr3 Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
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- 239000013528 metallic particle Substances 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 150000001875 compounds Chemical group 0.000 abstract description 8
- 238000010248 power generation Methods 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
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- 229930002839 ionone Natural products 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/0224—Electrodes
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Abstract
The invention discloses a kind of N-type selective emitter double-side cell, including N-type matrix, N-type matrix, side is disposed with heavy doping emitter region, emitter region, front passivated reflection reducing membrane, front electrode is lightly doped, and opposite side is disposed with phosphorus doping back surface field area, passivating back antireflective film and backplate；Wherein：Front electrode forms Ohmic contact through front passivated reflection reducing membrane with Highly doped emitter domain；Backplate forms Ohmic contact through passivating back antireflective film with phosphorus doping back surface field area.N-type double-side cell of the invention and its processing method, the compound structure of metallic region is reduced using doping concentration and reduction contact area is increased under metallized area, and the structure double-side cell is processed, so as to reduce the compound of front surface, improve cell power generation performance.
Description
Technical field
The present invention relates to N-type double-side cell technical field, more particularly to a kind of N-type selective emitter double-side cell and
Its processing method.
Background technology
N-type silicon materials have the following advantages that：
（1）Impurity in n type material is caught less than the impurity in P-type material to the capture ability in sub- hole less to sub- electronics less
Capacitation power.The minority carrier life time of the N-type silicon chip of same resistivity is higher than P-type silicon piece, reaches Millisecond.
（2）N-type silicon chip is higher than the metals such as P-type silicon piece, Fe, Cr, Co, W, Cu, Ni to the dirty miscellaneous tolerance of metal
Influence to P-type silicon piece is big than N-type silicon chip.
（3）N-type silion cell component shows the power generation characteristics more excellent than conventional P-type silicon component under dim light.
But it is when in use, the metallic region of front surface is compound than more serious, so as to reduce the efficiency of battery.
The content of the invention
In order to overcome the above-mentioned deficiencies of the prior art, the invention provides a kind of N-type selective emitter double-side cell and
Its processing method, solves problems of the prior art.The principal element that efficiency is restricted in N-type double-side cell is metal
It is compound that change brings, and the AgAl electrode zones for particularly contact with boron emitter stage are combined.The present invention is using in metallized area
It is lower to increase doping concentration and reduction contact area to reduce the compound of metallic region, so as to greatly reduce the compound of front surface.
The technical solution adopted in the present invention is：A kind of N-type selective emitter double-side cell, including N-type matrix,
N-type matrix, heavy doping emitter region that side is disposed with, be lightly doped emitter region, front passivated reflection reducing membrane,
Front electrode, opposite side is disposed with phosphorus doping back surface field, passivating back antireflective film and backplate；Wherein：
Front electrode forms Ohmic contact through front passivated reflection reducing membrane with heavy doping emitter region；
Backplate forms Ohmic contact through passivating back antireflective film with phosphorus doping back surface field.
Further, heavy doping emitter region is arranged by several linears, line segment shape or annular emission pole unit
Form, the width or a diameter of 80 microns -300 microns of each transmitting pole unit, heavily doped region area accounts for front surface face
Long-pending 4%-30%.
Further, when several transmitting pole units of heavy doping emitter region are straight line, localized contact electricity is formed thereon
Pole, is connected between localized contact electrode by main gate line.Heavy doping emitter region several transmitting pole units be line segment or
When person is circular, localized contact electrode is formed thereon, connected by some connection grid lines between localized contact electrode, some connection grid
Confluxed by a series of main gate lines between line, and connect grid line, main gate line and do not form Ohmic contact with phosphorus doping back surface field.
Further, the sheet resistance that emitter stage is lightly doped is 90-250ohm/sq.
Further, the sheet resistance of heavy doping emitter stage is 10-70ohm/sq.
Further, the front passivated reflection reducing membrane of heavy doping emitter stage is SiNx, SiO2、TiO2、 Al2O3, SiOxNy it is thin
One or more in film, and its thickness is 50-90nm.
Further, the passivating back antireflective film that emitter stage is lightly doped is SiNx, SiO2、TiO2、 Al2O3, SiOxNy it is thin
One or more in film, and its thickness is 50-90nm.
The method of the above-mentioned N-type selective emitter double-side cell of processing, the front electrode of N-type matrix is lightly doped transmitting
Pole uses BBr3 High temperature diffusions, and APCVD methods deposition BSG annealing, ion implanting boron source annealing process is formed, silk-screen printing boracic slurry
Material high annealing one of which is made.
Further, the heavy doping emitter stage of the front electrode of N-type matrix using silk-screen printing stop slurry etching technics,
Formed by the one of which in the laser doping of BSG, silk-screen printing boracic slurry high annealing, ion implantation technology.
Further, the phosphorus doping back surface field at the back side of N-type matrix is using High temperature diffusion, APCVD depositions PSG, ion
One of which in injection high annealing, the phosphorous slurry high-temperature annealing process of silk-screen printing is formed.
Further, front electrode and backplate use silk-screen printing, plating, chemical plating, inkjet printing, physical vapor
Deposited metal layer is formed, and wherein metal is the several combination of Ni, Cu, Ag, Ti, Pd, Cr.
Further, connection grid line and main gate line are using silk-screen printing sintering, conductive adhesive or metal wire bonding
Into；Wherein：Connection grid line and main gate line are Ag, the Cu bands of Surface coating In, Sn, Pb or the organic matter containing metallic particles.
Compared with prior art, the beneficial effects of the invention are as follows：A kind of N-type selective emitter double-side cell of the invention and its
Processing method, solves the low technical problem of cell power generation efficiency of the prior art.The present invention is using under metallized area
Increase doping concentration and reduction contact area to reduce the compound of metallic region, so as to greatly reduce answering for battery front surface
Close, improve the generating efficiency of battery.The compound of metallic region is inversely proportional with the emitter stage doping concentration under it, is in contact with it face
Product is directly proportional, and increases doping concentration, and reduction contact area can reduce metallic region and be combined.
Brief description of the drawings
Fig. 1 is a kind of structure chart of N-type selective emitter double-side cell side；
Fig. 2 is that a kind of transmitting pole unit of heavy doping emitter stage of N-type selective emitter double-side cell is the implementation of straightway
The Facad structure figure of example；
Fig. 3 is the Facad structure figure of line segment for the transmitting pole unit of the heavy doping emitter stage of N-type selective emitter double-side cell；
Fig. 4 is circular Facad structure figure for the transmitting pole unit of the heavy doping emitter stage of N-type selective emitter double-side cell；
Fig. 5 is the structure chart of one embodiment of the front-side metallization of N-type selective emitter double-side cell；
Fig. 6 is second structure chart of embodiment of the front-side metallization of N-type selective emitter double-side cell；
Fig. 7 is the 3rd structure chart of embodiment of the front-side metallization of N-type selective emitter double-side cell；
Wherein：1-N mold bases, 2- heavy doping emitter regions, 21- emitting stage units；3- is lightly doped emitter region, 4- fronts
Passivated reflection reducing membrane, 5- front electrodes, 6- phosphorus doping back surface fields, 7- passivating back antireflective films, 8- backplates, 9- main gate lines,
10- connects grid line, 11- localized contact electrodes.
Specific embodiment
In order to deepen the understanding of the present invention, the present invention is further described with reference to the accompanying drawings and examples, the implementation
Example is only used for explaining the present invention, protection scope of the present invention is not constituted and is limited.
Embodiment 1
As shown in figure 1, a kind of N-type selective emitter double-side cell, including N-type matrix 1, N-type matrix 1, side sets gradually
Some heavy doping emitter regions 2, emitter region 3, front passivated reflection reducing membrane 4, front electrode 5 is lightly doped, opposite side is successively
It is provided with phosphorus doping back surface field 6, passivating back antireflective film 7 and backplate 8；Wherein：Front electrode 5 subtracts through front passivation
Anti- film 4 forms Ohmic contact with heavy doping emitter region 2；Backplate 8 carries on the back table through passivating back antireflective film 7 with phosphorus doping
Face 6 forms Ohmic contact.
In the above-described embodiments, referring to Fig. 2, Fig. 3 and Fig. 4, heavy doping emitter region 2 is by several linears, line segment
Shape or annular emission pole unit 21 arrangement form, each transmitting pole unit 21 width or it is a diameter of 80 micron -300 it is micro-
Rice, mixes the 4%-30% that doped region accounts for battery front surface area again.As described in Fig. 5, Fig. 6 and Fig. 7, heavy doping emitter region
When 2 several transmitting pole units 21 are straight line, localized contact electrode 11 is formed thereon, pass through between localized contact electrode 11
Main gate line 9 is connected.When several transmitting pole units 21 of heavy doping emitter region 2 are line segment or circle, the office of formation thereon
Portion contacts electrode 11, is connected by some connection grid lines 10 between localized contact electrode 11, passes through between some connection grid lines 10
A series of main gate lines 9 are confluxed, and connect grid line 10, main gate line 9 not with boron doped emitter stage formed Ohmic contact.Heavy doping
When the transmitting pole unit 21 of emitter region 2 is linear or line segment shape, its width is 10-100 μm；When circular, a diameter of 30-
100μm；Connection grid line 10 width is 20 μm -100 μm, and the width of main gate line 9 is 0.5mm-1.5mm.Emitter region 3 is lightly doped
Sheet resistance is 90-250ohm/sq.The sheet resistance of heavy doping emitter region 2 is 10-70ohm/sq.
Additionally, the front passivated reflection reducing membrane 4 of heavy doping emitter region 2 is SiNx, SiO2、TiO2、 Al2O3、SiOxNy
One or more in film, and its thickness is 50-90nm.The passivating back antireflective film 7 that emitter region 3 is lightly doped is
SiNx、SiO2、TiO2、 Al2O3, one or more in SiOxNy films, and its thickness is 50-90nm.
The method of the above-mentioned N-type selective emitter double-side cell of processing, including the front electrode of N-type matrix is lightly doped
Emission electrode uses BBr3 High temperature diffusions, the deposition BSG annealing of APCVD methods, the annealing of ion implanting boron source, silk-screen printing boracic slurry
One of which in high-temperature annealing process is formed.Further, the heavy doping emitter stage of the front electrode of N-type matrix uses screen printing
Brush stops in slurry etching technics, the laser doping by BSG, silk-screen printing boracic slurry high annealing, ion implantation technology
One of which formed.The phosphorus doping back surface field at the back side of N-type matrix uses High temperature diffusion, APCVD deposition PSG, ion note
Enter high annealing, the one of which in the phosphorous slurry high-temperature annealing process of silk-screen printing is formed.
In the above-described embodiments, front electrode and backplate use silk-screen printing, plating, chemical plating, inkjet printing, thing
Physical vapor deposition metal level is formed, and wherein metal is the several combination of Ni, Cu, Ag, Ti, Pd, Cr.Connection grid and main grid use silk
Net printing-sintering, conductive adhesive or metal wire are welded；Wherein：Connection grid line and main gate line are Ag, Surface coating
The Cu bands of In, Sn, Pb or the organic matter containing metallic particles.
Embodiment 2
As shown in Figure 1, Figure 2 with shown in Fig. 5, N-type matrix, front surface BBr3 High temperature diffusions form and emitter region sheet resistance are lightly doped
150ohm/sq, heavy doping emitter region is formed by laser doping, and sheet resistance is 30ohm/sq, is straight line, and width is 200
Micron, accounts for front surface area 10%, thereon high-temperature oxydation generation 10nm SiO2Film simultaneously deposits 65nmSiNx films, using plating
Deposition Ni, Cu, Ag metal level, width is 60 μm, and Ohmic contact is formed with heavy doping emitter region after low-temperature sintering, is used
1.5mm conducting resinls wide will contact thin grid line and connect as main grid.Back surface forms back surface field using High temperature diffusion, and sheet resistance is
60ohm/sq, back side high growth temperature 10nmSiO2Film, and 65nmSiNx films are deposited, using electroplating deposition Ni, Cu, Ag metal
Layer, width is 60 μm, and Ohmic contact is formed with back of the body table after low-temperature sintering.
Embodiment 3
As shown in Fig. 1, Fig. 3 and Fig. 6, N-type matrix, front surface forms emitter stage using ion implantation high temperature annealing process, gently mixes
The miscellaneous ohm/sq of region sheet resistance 120, the ohm/sq of heavily doped region sheet resistance 40, heavy doping emitter region are line segment, and width is 200
Micron, is 1mm per segment length, and horizontal spacing is 1.2mm, and longitudinal pitch is 1.6mm.10nm Al are deposited thereon2O3Film,
60nmSiNx films, AgAl localized contact electrodes are printed using silk-screen printing, and width is 60 μm, is 0.8mm per segment length, is burnt
Ohmic contact is formed after knot with heavy doping emitter region, printing Ag connects thin grid and connection main grid connects localized contact electrode
Connect.Back surface is annealed to form back surface field using ion implanting, and sheet resistance is 70ohm/sq, and backside deposition 75nmSiNx films are adopted
Printed with silk-screen printing and form Ohmic contact with back surface field after Ag electrodes are sintered.
Embodiment 4
As shown in Fig. 1, Fig. 4 and Fig. 7, N-type matrix, front surface anneals to form heavily doped emitter stage, sheet resistance using APCVD depositions BSG
40ohm/sq, stops that the method for slurry corrosion is formed and emitter stage, the ohm/sq of sheet resistance 120, heavy doping is lightly doped using silk-screen printing
Emitter region is circle, and a diameter of 200 microns, each point horizontal spacing is 1.6mm, and longitudinal pitch is 1.6mm.Deposit thereon
10nm Al2O3Film, 60nmSiNx films print AgAl localized contact electrodes, a diameter of 100 μm, sintering using silk-screen printing
Ohmic contact is formed with heavy doping emitter region afterwards, the Cu lines coated using Sn, 200 μm of diameter, as connection fine rule, cladding
The Cu lines of In, width 1mm couples together localized contact electrode as connection main grid.Back surface printing phosphorus slurry high annealing is formed
Back surface field, sheet resistance is 70ohm/sq, backside deposition 75nmSiNx films, with the back of the body after being sintered using silk-screen printing printing Ag electrodes
Surface field forms Ohmic contact.
What embodiments of the invention were announced is preferred embodiment, but is not limited thereto, the ordinary skill people of this area
Member, easily according to above-described embodiment, understands spirit of the invention, and makes different amplifications and change, but as long as not departing from this
The spirit of invention, all within the scope of the present invention.
Claims (13)
1. a kind of N-type selective emitter double-side cell, it is characterised in that：Including N-type matrix（1）, N-type matrix（1）, side according to
It is secondary to be provided with heavy doping emitter region（2）, emitter region is lightly doped（3）, front passivated reflection reducing membrane（4）, front electrode
（5）, opposite side is disposed with phosphorus doping back surface field region（6）, passivating back antireflective film（7）And backplate（8）；Its
In：Front electrode（5）Through front passivated reflection reducing membrane（4）With heavy doping emission electrode（2）Form Ohmic contact；Backplate
（8）Through passivating back antireflective film（7）With phosphorus doping back surface field（6）Form Ohmic contact.
2. a kind of N-type selective emitter double-side cell according to claim 1, it is characterised in that：Heavy doping emitter stage
Region（2）By several linears, line segment shape or annular emission pole unit（21）Arrangement is formed, each transmitting pole unit
（21）Width or a diameter of 80 microns -300 microns, heavily doped region area accounts for the 4%-30% of front surface area.
3. a kind of N-type selective emitter double-side cell according to claim 2, it is characterised in that：Heavy doping emitter stage
Region（2）Several transmitting pole units（21）During for straight line, localized contact electrode is formed thereon（11）, localized contact electrode
(11) main gate line is passed through between（9）Connection；Heavy doping emitter region（2）Several transmitting pole units（21）For line segment or
When circular, localized contact electrode is formed thereon（11）, localized contact electrode（11）Between by some connection grid lines（10）Connection,
Some connection grid lines（10）Between by a series of main gate lines（9）Conflux, and connect grid line（10）, main gate line（9）Not with phosphorus
Doping back surface field（6）Form Ohmic contact.
4. a kind of N-type selective emitter double-side cell according to claim 3, it is characterised in that：Heavy doping emitter stage
Region（2）Transmitting pole unit（21）During for linear or line segment shape, its width is 10-100 μm；When circular, a diameter of 30-
100μm；Connection grid line（10）Width is 20 μm -100 μm, main gate line（9）Width is 0.5mm-1.5mm.
5. a kind of N-type selective emitter double-side cell according to claim 1, it is characterised in that：Emitter stage is lightly doped
Region（3）Sheet resistance be 90-250ohm/sq.
6. according to claim 1 or 5 a kind of N-type selective emitter double-side cell it is characterized in that：Heavy doping is launched
Polar region domain（2）Sheet resistance be 10-70ohm/sq.
7. a kind of N-type selective emitter double-side cell according to claim 6, it is characterised in that：Heavy doping emitter stage
Region（2）Front passivated reflection reducing membrane（4）It is SiNx, SiO2、TiO2、 Al2O3, one or more in SiOxNy films,
And its thickness is 50-90nm.
8. a kind of N-type selective emitter double-side cell according to claim 7, it is characterised in that：Emitter stage is lightly doped
Region（3）Passivating back antireflective film（7）It is SiNx, SiO2、TiO2、 Al2O3, one or more in SiOxNy films,
And its thickness is 50-90nm.
9. the method for processing the N-type selective emitter double-side cell described in 1-8 any one, it is characterised in that：N-type matrix
The positive emitter stage that is lightly doped uses BBr3High temperature diffusion, the deposition BSG annealing of APCVD methods, ion implanting boron source annealing process shape
Into silk-screen printing boracic slurry high annealing one of which is made.
10. method according to claim 9, it is characterised in that：The positive heavy doping emitter stage of N-type matrix uses silk screen
Printing stops slurry etching technics, the laser doping by BSG, silk-screen printing boracic slurry high annealing, ion implantation technology
In one of which formed.
11. method according to claim 9 or 10, it is characterised in that：The phosphorus doping back surface place at the back side of N-type matrix
Domain is using in High temperature diffusion, APCVD deposition PSG annealing, ion implantation high temperature annealing, silk-screen printing phosphorus slurry high-temperature annealing process
One of which is formed.
12. methods according to claim 11, it is characterised in that：Front electrode and backplate use silk-screen printing, electricity
Plating, chemical plating, inkjet printing, physical vapour deposition (PVD) metal level are formed, and wherein metal is the several group of Ni, Cu, Ag, Ti, Pd, Cr
Close.
13. methods according to claim 12, it is characterised in that：Connection grid line and main gate line using silk-screen printing sintering,
Conductive adhesive or metal wire are welded；Wherein：
Connection grid line and main gate line are Ag, the Cu bands of Surface coating In, Sn, Pb or the organic matter containing metallic particles.
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| CN109671793A (en) * | 2018-12-26 | 2019-04-23 | 浙江晶科能源有限公司 | A kind of N-type double-side cell and preparation method thereof |
| CN109742172A (en) * | 2019-01-08 | 2019-05-10 | 华东理工大学 | The method of spin coating boron source laser doping production N-type selective emitter double-side cell |
| CN112071958A (en) * | 2020-09-24 | 2020-12-11 | 山西潞安太阳能科技有限责任公司 | Novel p-type crystalline silicon battery emitter contact passivation preparation process |
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