CN102376821A - Passivation process for back of crystalline silicon solar cell and structure of back-passivated crystalline silicon solar cell - Google Patents
Passivation process for back of crystalline silicon solar cell and structure of back-passivated crystalline silicon solar cell Download PDFInfo
- Publication number
- CN102376821A CN102376821A CN2011102166578A CN201110216657A CN102376821A CN 102376821 A CN102376821 A CN 102376821A CN 2011102166578 A CN2011102166578 A CN 2011102166578A CN 201110216657 A CN201110216657 A CN 201110216657A CN 102376821 A CN102376821 A CN 102376821A
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- solar cell
- silicon
- mask
- slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a passivation process for a back of a crystalline silicon solar cell and a structure of a back-passivated crystalline silicon solar cell. The passivation process comprises: firstly, based on silicon nitride used as a mask on the back of a P-type silicon wafer, forming holes on the mask, then carrying out B diffusion to form heavy doping at the hole positions, washing away the silicon nitride mask, depositing a laminated film of aluminum oxide and silicon nitride, forming back contact patterns on the back of a cell, and manufacturing an aluminum electrode on the back of the cell. The invention has the beneficial effects that: the back-passivated solar cell has the following two characteristics: (1) a high-doped heavy-diffusion region is formed at the back contact and near position thereof of the cell, and the high-doped heavy-diffusion region is in good ohmic contact with the plated aluminum electrode, thus the series resistance of the cell is reduced; and (2) by annealing aluminum oxide, the back surface can be well passivated and the surface compounding rate is reduced, and silicon nitride has an action of protecting aluminum oxide, thus the destroy of aluminum oxide passivation effect in subsequent sputtering or evaporation process is avoided.
Description
Technical field
The present invention relates to a kind of crystal-silicon solar cell back of the body passivation technology and structure thereof.
Background technology
The preparation method of traditional solar cell, as shown in Figure 1, its technological process is cleaning and texturing, diffusion, edge etching and removes PSG, PECVD plating SiNx film, silk screen printing, sintering and electric performance test.This traditional technology has determined solar battery efficiency not improve a lot; And back of the body passivation can reduce the battery surface recombination rate; Can very significantly raise the efficiency; The method of existing back of the body passivation battery has: 1, plating aluminium oxide in the back side carries out passivation, uses the perforate of corrosivity slurry, prints aluminium paste afterwards and carries out sintering.2, plating silica in the back side carries out passivation, uses the perforate of corrosivity slurry, prints aluminium paste afterwards and carries out sintering.3, plating silicon nitride in the back side carries out passivation, uses the perforate of corrosivity slurry, prints aluminium paste afterwards and carries out sintering.
These deposition medium films are used the perforate of corrosivity slurry afterwards, republish the technology that aluminium paste carries out sintering and all have a common issue with, and sintering process tends to destroy passivation effect.
Summary of the invention
Technical problem to be solved by this invention is: provide a kind of crystal-silicon solar cell back of the body passivation technology to improve battery back of the body passivation effect.
The present invention solves the scheme that its technical problem adopts: a kind of crystal-silicon solar cell back of the body passivation technology; At first use silicon nitride to make mask at the P type silicon chip back side, the B diffusion is carried out in perforate on mask afterwards; Place in perforate forms heavy doping; Wash the stack membrane of deposition of aluminium oxide and silicon nitride after the silicon nitride mask, leave the antapex contact patterns at cell backside then, afterwards at cell backside making aluminium electrode.
Silicon nitride at the back side of battery plating one deck 100nm is made mask; On mask, carry out perforate through laser or corrosivity slurry; Wash after the mask deposition of aluminium oxide and annealing, deposited silicon nitride then; Use laser or corrosivity slurry to leave the pattern of antapex contact, at last through the method for evaporation or the sputter electrode of aluminizing.
The film of plating silicon nitride is as the mask of diffusion under 200 ℃～500 ℃ temperature, and thickness is 100nm, and the method for plating silicon nitride is PECVD.
Use PECVD plating aluminium oxide at the 300-350 degree, thickness is 30nm.
The temperature of annealing is 400 degree, and the annealing atmosphere is H2, and annealing time is 15 minutes.
The silicon nitride that will deposit after aluminium oxide annealing finishes, its thickness is 100nm, the method for using is PECVD.
Particularly; With the film that adopts PECVD equipment at silicon chip back of the body surface plating one deck silicon nitride after the P type silicon chip cleaning and texturing; Coating temperature is 200 ℃～500 ℃, and thickness is 100nm, then with screen printing technique with etching property slurry in the silicon nitride surface perforate; The size in hole is 300 microns of diameters, and spacing is 900 microns; Slurry is 1%～50% hydrogen fluoride amine and organic substance; The bake out temperature of slurry is 250 ℃, and the time is 5～30min, and the oven dry back is cleaned reactant with alkaline solution; Under 890 ℃～950 ℃ diffusion temperature, carrying out B then heavily spreads; Accomplish after heavily mixing up with 1%～30% hydrofluoric acid solution or 1%～50% phosphoric acid solution and remove silicon nitride mask, use PECVD to plate the aluminium oxide of 30nm on silicon chip back of the body surface afterwards, coating temperature is 300-350 ℃; Get into quick anneal oven then and in the H2 atmosphere, anneal, annealing temperature is 400 ℃, and annealing time is 15min; Re-use the silicon nitride of PECVD about silicon chip back of the body surface plating 100nm afterwards, use slurry to carry on the back surperficial perforate at silicon chip then, slurry is 1%～50% hydrogen fluoride amine and organic substance; The bake out temperature of slurry is 250 ℃; Time is 5～30min, and oven dry back is cleaned reactant with alkaline solution, at last through the mode of sputter or the evaporation electrode of aluminizing on silicon chip back of the body surface.
A kind of crystal-silicon solar cell back of the body passivating structure; The stack membrane that has aluminium oxide and silicon nitride in P type silicon chip back; Silicon nitride covers on the aluminium oxide, is the aluminium electrode on silicon nitride, the antapex contact area of P type silicon chip top electrode and P type silicon chip and neighbouring be the highly doped diffusion region of B.
The invention has the beneficial effects as follows: the present invention carries on the back passivation battery solar cell and has following two characteristics: 1) battery antapex contact and near the highly doped heavy diffusion region of formation; Can form good Ohmic contact with the aluminium electrode of plating afterwards, reduce the series resistance of battery; 2) annealed aluminium oxide can well passivation be carried on the back the surface, reduces recombination-rate surface, and silicon nitride afterwards plays the effect of a protection aluminium oxide, with the passivation effect of sputter after avoiding or evaporating course destruction aluminium oxide.
Compare with present business-like silicon solar cell, back of the body passivation battery can reduce the charge carrier recombination rate, so open circuit voltage and short circuit current all have greatly improved.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified;
Fig. 1 is the process chart of traditional silicon solar cell;
Fig. 2 is the process chart of solar battery back passivation of the present invention;
Fig. 3 is a solar battery back passivating structure of the present invention;
Among the figure, 1.P type silicon chip; 2. aluminium oxide; 3. silicon nitride; 4. aluminium electrode; 5.B highly doped diffusion region.
Embodiment
As shown in Figure 2, a kind of crystal-silicon solar cell back of the body passivation technology at first uses silicon nitride to make mask at the P type silicon chip back side; Perforate on mask; Carry out B diffusion afterwards, form heavy doping, wash the stack membrane of deposition of aluminium oxide and silicon nitride after the silicon nitride mask in the place of perforate; Leave the antapex contact patterns at cell backside then, make the aluminium electrode at cell backside afterwards.
The film of plating silicon nitride is as the mask of diffusion under 200 ℃～500 ℃ temperature, and thickness is about 100nm, and the method for plating silicon nitride is PECVD.
On mask, carry out perforate through laser or corrosivity slurry.
Wash after the mask, use PECVD plating aluminium oxide at the 300-350 degree, thickness is 30nm and annealing, and the temperature of annealing is 400 degree, and the annealing atmosphere is H2, and annealing time is 15 minutes.
The silicon nitride that will deposit after aluminium oxide annealing finishes, its thickness is 100nm, the method for using is PECVD.
Use laser or corrosivity slurry to leave the pattern of antapex contact, at last through the method for evaporation or the sputter electrode of aluminizing.
As shown in Figure 3; A kind of crystal-silicon solar cell is carried on the back passivating structure, has the stack membrane of aluminium oxide 2 and silicon nitride 3 at the back side of P type silicon chip 1, and silicon nitride 3 covers on the aluminium oxide 2; Be aluminium electrode 4 on silicon nitride 2, the antapex contact area on the P type silicon chip 1 and neighbouring be the highly doped diffusion region 5 of B.
Embodiment 1:
With the film that adopts PECVD equipment at silicon chip back of the body surface plating one deck silicon nitride after the P type silicon chip cleaning and texturing; Coating temperature is 200 ℃～500 ℃; Thickness is 100nm; Then with screen printing technique with etching property slurry in the silicon nitride surface perforate, the size in hole is 300 microns of diameters, spacing is 900 microns.Slurry is 1%～50% hydrogen fluoride amine and organic substance; The bake out temperature of slurry is 250 ℃, and the time is 5～30min, and the oven dry back is cleaned reactant with alkaline solution; Under 890 ℃～950 ℃ diffusion temperature, carrying out B then heavily spreads; Accomplish after heavily mixing up with 1%～30% hydrofluoric acid solution or 1%～50% phosphoric acid solution and remove silicon nitride mask, use PECVD to plate the aluminium oxide of 30nm on silicon chip back of the body surface afterwards, coating temperature is 300-350 ℃; Getting into quick anneal oven then anneals in the H2 atmosphere; Annealing temperature is 400 ℃, and annealing time is 15min, re-uses the silicon nitride of PECVD about silicon chip back of the body surface plating 100nm afterwards; Use slurry to carry on the back surperficial perforate then at silicon chip; Slurry is 1%～50% hydrogen fluoride amine and organic substance, and the bake out temperature of slurry is 250 ℃, and the time is 5～30min; The oven dry back is cleaned reactant with alkaline solution, carries on the back the aluminium about the about 300nm of surface plating through the mode of sputter or evaporation at silicon chip at last.
Claims (8)
1. a crystal-silicon solar cell is carried on the back passivation technology; It is characterized in that: at first use silicon nitride to make mask at the P type silicon chip back side, the B diffusion is carried out in perforate on mask afterwards; Place in perforate forms heavy doping; Wash the stack membrane of deposition of aluminium oxide and silicon nitride after the silicon nitride mask, leave the antapex contact patterns at cell backside then, afterwards at cell backside making aluminium electrode.
2. crystal-silicon solar cell back of the body passivation technology according to claim 1 is characterized in that: the silicon nitride at the back side of battery plating one deck 100nm is made mask; On mask, carry out perforate through laser or corrosivity slurry; Wash after the mask deposition of aluminium oxide and annealing, deposited silicon nitride then; Use laser or corrosivity slurry to leave the pattern of antapex contact, at last through the method for evaporation or the sputter electrode of aluminizing.
3. crystal-silicon solar cell back of the body passivation technology according to claim 1 and 2, it is characterized in that: the film of plating silicon nitride is as the mask of diffusion under 200 ℃～500 ℃ temperature, and thickness is 100nm, and the method for plating silicon nitride is PECVD.
4. crystal-silicon solar cell back of the body passivation technology according to claim 1 and 2 is characterized in that: use PECVD plating aluminium oxide at the 300-350 degree, thickness is 30nm.
5. crystal-silicon solar cell back of the body passivation technology according to claim 2, it is characterized in that: the temperature of annealing is 400 degree, and the annealing atmosphere is H2, and annealing time is 15 minutes.
6. crystal-silicon solar cell back of the body passivation technology according to claim 2 is characterized in that: the silicon nitride that will deposit after aluminium oxide annealing finishes, and its thickness is 100nm, the method for using is PECVD.
7. crystal-silicon solar cell back of the body passivation technology according to claim 1; It is characterized in that: with the film that adopts PECVD equipment at silicon chip back of the body surface plating one deck silicon nitride after the P type silicon chip cleaning and texturing; Coating temperature is 200 ℃～500 ℃, and thickness is 100nm, then with screen printing technique with etching property slurry in the silicon nitride surface perforate; The size in hole is 300 microns of diameters, and spacing is 900 microns; Slurry is 1%～50% hydrogen fluoride amine and organic substance; The bake out temperature of slurry is 250 ℃, and the time is 5～30min, and the oven dry back is cleaned reactant with alkaline solution; Under 890 ℃～950 ℃ diffusion temperature, carrying out B then heavily spreads; Accomplish after heavily mixing up with 1%～30% hydrofluoric acid solution or 1%～50% phosphoric acid solution and remove silicon nitride mask, use PECVD to plate the aluminium oxide of 30nm on silicon chip back of the body surface afterwards, coating temperature is 300-350 ℃; Get into quick anneal oven then and in the H2 atmosphere, anneal, annealing temperature is 400 ℃, and annealing time is 15min; Re-use the silicon nitride of PECVD about silicon chip back of the body surface plating 100nm afterwards, use slurry to carry on the back surperficial perforate at silicon chip then, slurry is 1%～50% hydrogen fluoride amine and organic substance; The bake out temperature of slurry is 250 ℃; Time is 5～30min, and oven dry back is cleaned reactant with alkaline solution, at last through the mode of sputter or the evaporation electrode of aluminizing on silicon chip back of the body surface.
8. a crystal-silicon solar cell is carried on the back passivating structure; It is characterized in that: the stack membrane that has aluminium oxide and silicon nitride in P type silicon chip back; Silicon nitride covers on the aluminium oxide; Be the aluminium electrode on silicon nitride, the antapex contact area of P type silicon chip top electrode and P type silicon chip and neighbouring be the highly doped diffusion region of B.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102166578A CN102376821A (en) | 2011-07-30 | 2011-07-30 | Passivation process for back of crystalline silicon solar cell and structure of back-passivated crystalline silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102166578A CN102376821A (en) | 2011-07-30 | 2011-07-30 | Passivation process for back of crystalline silicon solar cell and structure of back-passivated crystalline silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102376821A true CN102376821A (en) | 2012-03-14 |
Family
ID=45795119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102166578A Pending CN102376821A (en) | 2011-07-30 | 2011-07-30 | Passivation process for back of crystalline silicon solar cell and structure of back-passivated crystalline silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102376821A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709335A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method of local doping or metallization by SiN film pinholes |
| CN102738252A (en) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | Double-face passivated metal wrap through (MWT) solar battery and manufacturing method thereof |
| CN102779901A (en) * | 2012-08-08 | 2012-11-14 | 泰通(泰州)工业有限公司 | Process for manufacturing back-surface-passivation crystalline silicon solar cell |
| CN103296099A (en) * | 2013-06-17 | 2013-09-11 | 奥特斯维能源（太仓）有限公司 | Rear surface passivation point contact photovoltaic battery and production method thereof |
| CN106158988A (en) * | 2015-04-07 | 2016-11-23 | 昱晶能源科技股份有限公司 | Solar cell and manufacture method thereof |
| CN106486567A (en) * | 2016-11-14 | 2017-03-08 | 苏州阿特斯阳光电力科技有限公司 | A kind of antireflective coating of crystal silicon solar energy battery and preparation method thereof |
| CN109671806A (en) * | 2018-12-26 | 2019-04-23 | 浙江晶科能源有限公司 | A kind of preparation method of N-type double-side cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815760A (en) * | 2005-12-15 | 2006-08-09 | 江菲菲 | Back point-contact silicon solar cell based on silk-screen printing technology and making method |
| CN101548392A (en) * | 2006-12-01 | 2009-09-30 | 夏普株式会社 | Solar cell and method for manufacturing the same |
| WO2011076753A1 (en) * | 2009-12-23 | 2011-06-30 | Applied Materials, Inc. | Enhanced passivation layer for wafer based solar cells, method and system for manufacturing thereof |
| CN102130213A (en) * | 2010-12-31 | 2011-07-20 | 常州天合光能有限公司 | Preparation method of selective emitter junction silicon solar cell with rear surface passivation |
-
2011
- 2011-07-30 CN CN2011102166578A patent/CN102376821A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815760A (en) * | 2005-12-15 | 2006-08-09 | 江菲菲 | Back point-contact silicon solar cell based on silk-screen printing technology and making method |
| CN101548392A (en) * | 2006-12-01 | 2009-09-30 | 夏普株式会社 | Solar cell and method for manufacturing the same |
| WO2011076753A1 (en) * | 2009-12-23 | 2011-06-30 | Applied Materials, Inc. | Enhanced passivation layer for wafer based solar cells, method and system for manufacturing thereof |
| CN102130213A (en) * | 2010-12-31 | 2011-07-20 | 常州天合光能有限公司 | Preparation method of selective emitter junction silicon solar cell with rear surface passivation |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709335A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method of local doping or metallization by SiN film pinholes |
| CN102738252A (en) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | Double-face passivated metal wrap through (MWT) solar battery and manufacturing method thereof |
| CN102779901A (en) * | 2012-08-08 | 2012-11-14 | 泰通(泰州)工业有限公司 | Process for manufacturing back-surface-passivation crystalline silicon solar cell |
| CN103296099A (en) * | 2013-06-17 | 2013-09-11 | 奥特斯维能源（太仓）有限公司 | Rear surface passivation point contact photovoltaic battery and production method thereof |
| CN106158988A (en) * | 2015-04-07 | 2016-11-23 | 昱晶能源科技股份有限公司 | Solar cell and manufacture method thereof |
| CN106158988B (en) * | 2015-04-07 | 2017-12-12 | 昱晶能源科技股份有限公司 | Solar cell and its manufacture method |
| CN106486567A (en) * | 2016-11-14 | 2017-03-08 | 苏州阿特斯阳光电力科技有限公司 | A kind of antireflective coating of crystal silicon solar energy battery and preparation method thereof |
| CN109671806A (en) * | 2018-12-26 | 2019-04-23 | 浙江晶科能源有限公司 | A kind of preparation method of N-type double-side cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109888061B (en) | Alkali polishing efficient PERC battery and preparation process thereof | |
| TWI685984B (en) | Hybrid polysilicon heterojunction back contact cell | |
| CN108807565B (en) | Passivation contact electrode structure, solar cell applicable to passivation contact electrode structure and manufacturing method of passivation contact electrode structure | |
| CN109244194B (en) | Preparation method of low-cost P-type full back electrode crystalline silicon solar cell | |
| CN102376821A (en) | Passivation process for back of crystalline silicon solar cell and structure of back-passivated crystalline silicon solar cell | |
| CN111029438A (en) | Preparation method of N-type passivated contact solar cell | |
| CN109686816B (en) | Preparation method of passivated contact N-type solar cell | |
| CN106992229A (en) | A kind of PERC cell backsides passivation technology | |
| CN101777606B (en) | Crystalline silicon solar battery selective diffusion process | |
| JP2009512214A (en) | Method for manufacturing n-type polycrystalline silicon solar cell | |
| CN105810779B (en) | A kind of preparation method of PERC solar cells | |
| EP2898545B1 (en) | Method for fabricating silicon photovoltaic cells | |
| MX2011001146A (en) | Crystalline silicon pv cell with selective emitter produced with low temperature precision etch back and passivation process. | |
| US20140020746A1 (en) | Metal contact scheme for solar cells | |
| CN106463562A (en) | A hybrid all-back-contact solar cell and method of fabricating the same | |
| WO2023077787A1 (en) | Se laser-doped pattern of perc battery, and perc battery manufacturing method | |
| CN110233189A (en) | A kind of solar battery and preparation method thereof of back side local heavy doping | |
| CN110137305A (en) | A kind of preparation method of p-type polysilicon selective emitter double-side cell | |
| JP2024517203A (en) | Selective passivation contact battery and method for producing same | |
| CN103560168A (en) | Process for manufacturing PERC solar cell | |
| WO2014092649A1 (en) | A method of manufacturing a photovoltaic cell | |
| CN105304730A (en) | MWT cell with back passive film and preparation method thereof | |
| CN104009120B (en) | The preparation method of N-type crystalline silicon grooving and grid burying battery | |
| CN102130213A (en) | Preparation method of selective emitter junction silicon solar cell with rear surface passivation | |
| CN102184985B (en) | Back face passivating structure and method for floating junction of solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120314 |