CN106783940A - 具有渐变浓度的边缘终端结构的功率半导体装置 - Google Patents

具有渐变浓度的边缘终端结构的功率半导体装置 Download PDF

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CN106783940A
CN106783940A CN201611033986.8A CN201611033986A CN106783940A CN 106783940 A CN106783940 A CN 106783940A CN 201611033986 A CN201611033986 A CN 201611033986A CN 106783940 A CN106783940 A CN 106783940A
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edge termination
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CN106783940B (zh
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黄智方
李坤彦
郑家慧
王圣中
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Macroblock Inc
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Abstract

一种具有渐变浓度的边缘终端结构的功率半导体装置，包含一基板、一本体，及一电极单元。本体形成于基板上并包括主动部、环围主动部的边缘终端部，及绝缘氧化层，主动部具有多个相互并联的电晶体，边缘终端部具有呈第一型半导体特性的第一半导体区、呈第二型半导体特性的第二半导体区，及远离基板的顶面，绝缘氧化层与基板相间隔地形成于边缘终端部，第一型半导体特性的浓度由顶面往基板方向递减。电极单元包括与电晶体连接且部分形成于绝缘氧化层上的第一电极层，及与本体相间隔地形成于基板的第二电极层。借此，使该边缘终端部施加电压时，能延伸该第一半导体区与该第二半导体区之间的空乏区并具有均匀的电力线，从而能承受较高的崩溃电压。

Description

具有渐变浓度的边缘终端结构的功率半导体装置
技术领域
本发明涉及一种功率半导体装置，特别是涉及一种具有渐变浓度的边缘终端结构的功率半导体装置。
背景技术
功率半导体装置通常包含一主动部及一围绕该主动部边缘而用于将主动部累积的静电荷或不必要的漏电流带走的边缘终端部。
一般来说，该主动部由多个电晶体并联而成，形成多个彼此相互交替排列的n型半导体柱与p型半导体柱。然而，此种边缘终端部结构的n型半导体柱与p型半导体柱彼此的间距与宽度需精准设计，若间距过大会无法发挥承受崩溃电压的功效而提早于该主动部崩溃，若其彼此间距过小则n型半导体柱与p型半导体柱之间的空乏区无法有效延伸，而无法承受较高的崩溃电压。
另一种边缘终端部则是形成均匀的一n型半导体层与一p型半导体层而构成一二极体结构。然而，以此种方式形成边缘终端部时，于降低n型半导体层与p型半导体层的载子浓度时，虽能提升该边缘终端部所构成的二极体的空乏区，但二极体的电场则会因低载子浓度而变小且具有不均匀的电力线，从而仅能承受较小的崩溃电压；当提高n型半导体层与p型半导体层的载子浓度时，虽能提高二极体的电场，但其空乏区则会跟着变小，也仅能承受较小的崩溃电压。
发明内容
本发明的目的在于提供一种具有渐变浓度的边缘终端结构的功率半导体装置。
本发明具有渐变浓度的边缘终端结构的功率半导体装置，包含一层基板、一个本体，及一个电极单元
该本体形成于该基板上，并包括一主动部、一环围该主动部的边缘终端部，及一绝缘氧化层，该主动部具有多个相互并联的电晶体，该边缘终端部具有一呈一第一型半导体特性的第一半导体区、一呈一第二型半导体特性的第二半导体区，及一远离该基板的顶面，该绝缘氧化层与该基板相间隔地形成于该边缘终端部上，该第一型半导体特性的浓度由该顶面往该基板方向递减。
该电极单元包括一与所述电晶体连接且部分形成于该绝缘氧化层上的第一电极层，及一与该本体相间隔地形成于该基板的第二电极层。
本发明的具有渐变浓度的边缘终端结构的功率半导体装置，该第一半导体区由该顶面向该基板方向延伸，该第二半导体区由该基板沿该第一半导体区的边缘往远离该基板方向延伸至该顶面。
本发明的具有渐变浓度的边缘终端结构的功率半导体装置，该第一型半导体特性的浓度由该第一半导体区邻近该主动部与该顶面处往该边缘终端部与该基板处呈径向发散地降低。
本发明的具有渐变浓度的边缘终端结构的功率半导体装置，定义一平行该基板并从该主动部指向该边缘终端部为第一方向，及一垂直该第一方向并从该顶面指向该基板为第二方向，该第一型半导体特性的浓度沿该第二方向降低。
本发明的具有渐变浓度的边缘终端结构的功率半导体装置，定义一平行该基板并从该主动部指向该边缘终端部为第一方向，及一垂直该第一方向并从该顶面指向该基板为第二方向，该第一型半导体特性的浓度沿该第一方向降低。
本发明的具有渐变浓度的边缘终端结构的功率半导体装置，定义一平行该基板并从该主动部指向该边缘终端部为第一方向,该第一半导体区沿该第一方向具有N层半导体层，N＞1，相邻的该半导体层的第一型半导体特性的浓度差异小于20％。
本发明的具有渐变浓度的边缘终端结构的功率半导体装置，定义一垂直该基板并从该顶面指向该基板为第二方向,该第一半导体区沿该第二方向具有M层半导体层，M＞1，相邻的该半导体层的第一型半导体特性的浓度差异小于20％。
本发明的具有渐变浓度的边缘终端结构的功率半导体装置，定义一平行该基板并从该主动部指向该边缘终端部为第一方向，及一垂直该第一方向并从该顶面指向该基板为第二方向,该第一半导体区沿该第一方向具有N层半导体层，N＞1，所述N层半导体层彼此相连，该第一半导体区沿该第二方向具有M层半导体层，M＞1，所述M层半导体层为彼此相连及彼此不相连其中一者。
本发明的具有渐变浓度的边缘终端结构的功率半导体装置，定义一平行该基板并从该主动部指向该边缘终端部为第一方向，及一垂直该第一方向并从该顶面指向该基板为第二方向，该第一型半导体特性的浓度由该第一半导体区邻近该主动部与该顶面处往该边缘终端部与该基板处呈径向发散地降低，该第二型半导体特性的浓度沿该第二方向的反方向降低。
本发明的具有渐变浓度的边缘终端结构的功率半导体装置，定义一平行该基板并从该主动部指向该边缘终端部为第一方向，及一垂直该第一方向并从该顶面指向该基板为第二方向，该第一型半导体特性的浓度由该第一半导体区邻近该主动部与该顶面处往该边缘终端部与该基板处呈径向发散地降低，该第二型半导体特性的浓度沿该第一方向的反方向降低。
本发明的有益效果在于：通过让该第一半导体区的该第一型半导体特性的浓度由该绝缘氧化层往该基板方向递减，当对该边缘终端部施加电压时，能延伸该第一半导体区与该第二半导体区之间的空乏区并具有均匀的电力线，从而能承受较高的崩溃电压。
附图说明
图1是一示意图，说明本发明具有渐变浓度的边缘终端结构的功率半导体装置的省略一绝缘氧化层与一电极单元的一第一实施例；
图2是一剖面侧视示意图，辅助说明图1沿II-II直线的该第一实施例；
图3是一模拟示意图，辅助说明图2的一边缘终端部；
图4是一模拟示意图，辅助说明图2的该边缘终端部；
图5是一模拟示意图，说明本发明具有渐变浓度的边缘终端结构的功率半导体装置的一第二实施例；及
图6是一示意图，说明本发明具有渐变浓度的边缘终端结构的功率半导体装置的一第三实施例。
具体实施方式
下面结合附图及实施例对本发明进行详细说明。
参阅图1与图2，本发明具有渐变浓度的边缘终端结构的功率半导体装置的一第一实施例，包含一层由半导体材料所构成的基板2、一个形成于该基板2上的本体3，及一个形成于该本体3上的电极单元4。
具体地说，该本体3包括一主动部31、一环围该主动部31的边缘终端部32，及一绝缘氧化层325。该主动部31包括多个彼此交错排列且分别呈第一型半导体特性与第二型半导体特性的第一柱状区311及第二柱状区312、该每一个第一柱状区311具有一自该主动部31顶面往该基板2方向延伸的井区313、两个形成于该井区313，彼此间隔且邻近该主动部31顶面的源极区314，及多个分别形成于所述第二柱状区312的顶面，并分别与相邻的两个源极区314连接的闸极区315，从而构成多个相互并联且具有超级接面(super junction)的电晶体316。要说明的是，无论是具有超级接面电晶体或一般电晶体均可适用于构成该主动部31，由于所述电晶体316细部结构为本领域技术人员所周知，且非本发明的重点，因此，于此不加以赘述。
该边缘终端部32具有一远离该基板2的顶面320、一呈一第一型半导体特性且由该顶面320向该基板2方向延伸的第一半导体区321，及一呈一第二型半导体特性且由该基板2沿该第一半导体区321的边缘往远离该基板2方向延伸至该顶面320的第二半导体区322，且该第一半导体区321与该第二半导体区322分别具有一表面323、324；其中，于本实施例中，该第一半导体区321的该表面323与该第二半导体区322的该表面324共同构成该边缘终端部32的顶面320。该绝缘氧化层325与该基板2相间隔地形成于该边缘终端部32的顶面320上。
该电极单元4包括一形成于该本体3而与所述电晶体316的源极区314连接，并部分形成于该绝缘氧化层325上而与该边缘终端部32耦接的第一电极层41，及一与该本体3相间隔地形成于于基板2的第二电极层42。
详细地说，该第一型半导体与该第二型半导体的掺杂原子并无特别限制，于本实施例中，该第一型半导体与该第二型半导体分别是以含有3价原子的p型半导体与含有5价原子的n型半导体为例作说明。该第一型半导体特性的浓度是由该第一半导体区321邻近该主动部31与该顶面320处往边缘终端部32与该基板2处以一径向R的方向发散而呈梯度地降低。
更详细地说，由于该边缘终端部32的形成是先于该基板2上磊晶成长n型半导体层后，再对此n型半导体层进行掺杂，从而构成具有p型半导体特性的该第一半导体区321。换句话说，图2的该第一半导体区321中所显示的阵列的方格P是用于示意掺杂过程，也就是说，此掺杂过程是局部进行掺杂，并由该顶面320至该基板2的垂直方向及该主动部31至该边缘终端部32水平方向调整掺杂浓度，使p型半导体特性沿该顶面320至该基板2的垂直方向及该主动部31至该边缘终端部32水平方向呈梯度递减。本实施例是以离子布植方式配合一光罩孔洞及针对多次堆叠的磊晶层的不同层施打不同的离子浓度来实施作说明，然而，实际掺杂方式并无特别限制。详细地说，本实施例是通过离子布植制程，通过先后执行以不同剂量来控制掺杂浓度来做垂直掺杂调变，再搭配光罩孔洞的开口率以于该边缘终端部32的顶面320控制离子通过来做横向掺杂调变，来达成具有斜向渐变浓度的第一半导体区321。
因此，以实际情况而言，图2位于靠近该基板2及该边缘终端部32尾端的方格P处虽然仍有进行p型半导体掺杂，但是因为具有最低的p型半导体特性浓度，因此，其整体半导体特性加总后(n型半导体特性与p型半导体特性的加总)，其方格P的顶层与靠近该主动部31处，会几乎属于p型半导体特性；而方格P靠近该基板2的边缘终端部32处会几乎属于n型半导体特性。
因此，当功率半导体装置施加电压产生的一空乏区33于实际情况会位于如图2所示处。
此处值得一提的是，于该第一实施例中，定义一平行该基板2并由该主动部31指向该边缘终端部32为第一方向X，及一垂直该第一方向X，即垂直该基板并由该顶面320指向该基板2为第二方向Y，该第一半导体区321可视为是由沿该第一方向X具有N层不同浓度的半导体层(图未示，N＞1)，及沿该第二方向Y具有M层半导体层(图未示，M＞1)所构成。较佳地，相邻的半导体层的第一型半导体特性的浓度差异小于20％，且所述N层半导体层彼此相连，而所述M层半导体层则可彼此相连或彼此不相连。
配合地参阅图3与图4，图3是使用半导体元件与制程模拟软体(TACD)进行该第一实施例的模拟图，而呈现该边缘终端部32的该第一半导体区321所具有第一型半导体特性浓度渐变的特性。一般来说，与该主动部31耦接的该边缘终端部32主要作用在于导引多余电荷至外界，以防止该主动部31崩溃。当使用本发明具有渐变浓度的边缘终端结构的功率半导体装置时，外界分别提供该基板2(此处作为该电晶体316与边缘终端部32的汲极区)与源极区314之间，及该闸极区315与该源极区314之间一正电压时，该电晶体316成开启状态。由于本实施例该边缘终端部32的第一半导体区321的第一型半导体特性具有渐变的浓度，由图3可知此渐变浓度的特性能使该边缘终端部32因在汲极区施加正电压所产生的空乏区33能进行延伸。
进一步地，图4显示有该边缘终端部32的电力线示意图，由图4可知由于第一半导体区321中的第一型半导体特性的浓度是斜下的渐变，因此，该主动部31至该边缘终端部32及该顶面320至该基板2的p型掺杂浓度变化由高到低，从而使得电力线容易延伸，而此一特点能让本发明功率半导体装置相较于现有的功率半导体装置，在制作承受同样的崩溃电压的该边缘终端部32时，能制作成较小的体积。详细地说，由于现有的功率半导体装置的边缘终端部是使用让第一型半导体特性与第二型半导体特性呈单一浓度状态的二极体，因此，若要承受与本发明相当的崩溃电压时，必须让边缘终端部的整体体积增加，以提高阻值而能承受较高的崩溃电压。由此可知，本发明该第一半导体区321所具有的浓度渐变的第一型半导体特性不仅能延伸该边缘终端部32产生的空乏区33，还能缩小边缘终端部32的体积而承受较高的崩溃电压。
配合地参阅图5，本发明具有渐变浓度的边缘终端结构的功率半导体装置的一第二实施例大致是相同于该第一实施例，其不同处在于，该第一半导体区321的第一型半导体特性的浓度只有该顶面320垂直往该基板2渐变。详细地说，图5显示有模拟该第二实施例的边缘终端部32的模拟图，于该第二实施例中，该第一型半导体特性的浓度只有沿该第二方向Y降低。据此，由图5的TACD模拟图可推知，当第一型半导体特性的浓度若仅沿该第二方向Y降低时，也能有效延伸于该边缘终端部32产生的空乏区33。
配合地参阅图6，本发明具有渐变浓度的边缘终端结构的功率半导体装置的一第三实施例大致是相同于该第一实施例，其不同处在于，该第三实施例是同时以两种掺杂源，对该主动部31及该边缘终端部32进行掺杂，以此方式进行能使该主动部31的效能更好。详细地说，本实施例的掺杂方式主要是通过建构该第二半导体区322与该第二柱状区312时，以于该每一层磊晶层中同时掺杂3价原子与5价原子，且让3价原子的掺杂量沿该顶面320往该基板2(该第二方向Y)及由该主动部31往该边缘终端部32方向(该第一方向X)递减，而让5价原子的掺杂量沿该顶面320往该基板2(该第二方向Y)及由该主动部31往该边缘终端部32的方向(该第一方向X)递增。也就是说，总体来看，以此方式掺杂完成的该边缘终端部32的p型半导体浓度，会由靠近该主动部31与该顶面320处沿该基板2与该边缘终端部32方向逐渐递减；而n型半导体浓度，则会由该顶面320往该基板2方向(该第二方向Y)递增及由该主动部31往该边缘终端部32的方向(该第一方向X)递增，通过对每一层磊晶层施打不同剂量的3价原子及5价原子，及让通过3价原子的光罩的开口改变而造成与第一实施例相同的效果。
综上所述，本发明具有渐变浓度的边缘终端结构的功率半导体装置，通过让该边缘终端部32的该第一半导体区321的第一型半导体特性的浓度由该顶面320往该基板2及该主动部31往该边缘终端部32方向呈梯度递减，并让相邻浓度差异小于20％，使对该边缘终端部32施加电压时，能延伸该第一半导体区321与该第二半导体区322之间的空乏区33并具有均匀的电力线，从而使功率半导体装置能承受较高的崩溃电压，所以确实能达成本发明的目的。

Claims (10)

1.一种具有渐变浓度的边缘终端结构的功率半导体装置，包含：一层基板、一个本体，及一个电极单元；其特征在于：该本体形成于该基板上，并包括一主动部、一环围该主动部的边缘终端部，及一绝缘氧化层，该主动部具有多个相互并联的电晶体，该边缘终端部具有一呈一第一型半导体特性的第一半导体区、一呈一第二型半导体特性的第二半导体区，及一远离该基板的顶面，该绝缘氧化层与该基板相间隔地形成于该边缘终端部上，该第一型半导体特性的浓度由该顶面往该基板方向递减，该电极单元包括一与所述电晶体连接且部分形成于该绝缘氧化层上的第一电极层，及一与该本体相间隔地形成于该基板的第二电极层。
2.根据权利要求1所述的具有渐变浓度的边缘终端结构的功率半导体装置，其特征在于：该第一半导体区由该顶面向该基板方向延伸，该第二半导体区由该基板沿该第一半导体区的边缘往远离该基板方向延伸至该顶面。
3.根据权利要求2所述的具有渐变浓度的边缘终端结构的功率半导体装置，其特征在于：该第一型半导体特性的浓度由该第一半导体区邻近该主动部与该顶面处往该边缘终端部与该基板处呈径向发散地降低。
4.根据权利要求2所述的具有渐变浓度的边缘终端结构的功率半导体装置，其特征在于：定义一平行该基板并从该主动部指向该边缘终端部为第一方向，及一垂直该第一方向并从该顶面指向该基板为第二方向，该第一型半导体特性的浓度沿该第二方向降低。
5.根据权利要求2所述的具有渐变浓度的边缘终端结构的功率半导体装置，其特征在于：定义一平行该基板并从该主动部指向该边缘终端部为第一方向，及一垂直该第一方向并从该顶面指向该基板为第二方向，该第一型半导体特性的浓度沿该第一方向降低。
6.根据权利要求2所述的具有渐变浓度的边缘终端结构的功率半导体装置，其特征在于：定义一平行该基板并从该主动部指向该边缘终端部为第一方向,该第一半导体区沿该第一方向具有N层半导体层，N＞1，相邻的该半导体层的第一型半导体特性的浓度差异小于20％。
7.根据权利要求2所述的具有渐变浓度的边缘终端结构的功率半导体装置，其特征在于：定义一垂直该基板并从该顶面指向该基板为第二方向,该第一半导体区沿该第二方向具有M层半导体层，M＞1，相邻的该半导体层的第一型半导体特性的浓度差异小于20％。
8.根据权利要求2所述的具有渐变浓度的边缘终端结构的功率半导体装置，其特征在于：定义一平行该基板并从该主动部指向该边缘终端部为第一方向，及一垂直该第一方向并从该顶面指向该基板为第二方向,该第一半导体区沿该第一方向具有N层半导体层，N＞1，所述N层半导体层彼此相连，该第一半导体区沿该第二方向具有M层半导体层，M＞1，所述M层半导体层为彼此相连及彼此不相连其中一者。
9.根据权利要求2所述的具有渐变浓度的边缘终端结构的功率半导体装置，其特征在于：定义一平行该基板并从该主动部指向该边缘终端部为第一方向，及一垂直该第一方向并从该顶面指向该基板为第二方向，该第一型半导体特性的浓度由该第一半导体区邻近该主动部与该顶面处往该边缘终端部与该基板处呈径向发散地降低，该第二型半导体特性的浓度沿该第二方向的反方向降低。
10.根据权利要求2所述的具有渐变浓度的边缘终端结构的功率半导体装置，其特征在于：定义一平行该基板并从该主动部指向该边缘终端部为第一方向，及一垂直该第一方向并从该顶面指向该基板为第二方向，该第一型半导体特性的浓度由该第一半导体区邻近该主动部与该顶面处往该边缘终端部与该基板处呈径向发散地降低，该第二型半导体特性的浓度沿该第一方向的反方向降低。
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