CN106711098B - Ic塑料封装结构及其制备方法 - Google Patents
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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Abstract
本发明涉及一种IC塑料封装结构及其制备方法,其特征是:包括LCP基板、EMC包封层和LCP密封层,LCP基板包括LCP预模塑层和引线框架,在LCP基板的上表面安装芯片,芯片上包封EMC包封层,EMC包封层的外部包封LCP密封层。所述IC塑料封装结构的制备方法,包括以下步骤:(1)在引线框架的下表面采用LCP材质形成LCP基板;(2)在LCP基板上表面组装芯片;(3)芯片上包封EMC包封层;(4)去除多余的EMC包封层;(5)在EMC包封层外部包封LCP密封层;(6)去除多余的LCP密封层以及引线框架下方多余的LCP预模塑层;(7)将半成品分割成型为独立的封装体。本发明改进了基于EMC的塑料封装在防水气渗透方面的不足,提升塑料封装的防水气渗入性能,从而增强塑料封装的可靠性。
Description
技术领域
本发明涉及一种IC(集成电路)塑料封装结构及其制备方法,属于集成电路制造技术领域。
背景技术
塑料封装在尺寸、重量、性能、成本方面优于气密性封装。估计塑封器件占世界商用芯片封装市场的97%。但普通塑料封装所使用的包封材料主要为环氧树脂,其防水气入性能较差,水气诱发的失效机理如腐蚀、裂纹、界面分层非常显著,这些不足限制了塑料封装在高可靠集成电路封装中的应用。
发明内容
本发明的目的是克服现有技术中存在的不足,提供一种IC塑料封装结构及其制备方法,改进了基于EMC的塑料封装在防水气渗透方面的不足,提升塑料封装的防水气渗入性能,从而增强塑料封装的可靠性。
按照本发明提供的技术方案,一种IC塑料封装结构,其特征是:包括LCP基板、EMC包封层和LCP密封层,LCP基板包括LCP预模塑层和设置于LCP预模塑层上表面的引线框架;在所述LCP基板的上表面安装芯片,芯片由EMC包封层封装于LCP基板的上表面,在EMC包封层的外部包封一层LCP密封层。
所述IC塑料封装结构的制备方法,其特征是,包括以下步骤:
(1)在引线框架的下表面采用LCP材质通过预模塑形成LCP基板;
(2)在LCP基板上表面组装芯片;
(3)将组装后的芯片采用环氧树脂进行包封,得到EMC包封层;
(4)根据产品的形状、尺寸要求,去除多余的EMC包封层;
(5)在EMC包封层外部包封一层LCP材质,得到LCP密封层;
(6)根据产品的形状、尺寸要求,去除多余的LCP密封层以及引线框架下方多余的LCP预模塑层;
(7)将步骤(6)得到的半成品分割成型为独立的封装体。
进一步的,在所述LCP基板上表面采用装片、键合工艺组装芯片。
进一步的,所述芯片采用压缩模或注塑模工艺进行包封。
进一步的,在所述EMC包封层外部采用注射模的注射成型工艺包封一层LCP密封层。
进一步的,所述步骤得到的封装体经切中筋、去飞边、电镀、打印、成型,得到独立的封装体。
进一步的,所述EMC包封层和LCP密封层的总厚度为0.25~1.2mm。
本发明与已有技术相比具有以下优点:本发明所述塑料封装采用LCP材质基板与LCP外部密封层将EMC包封在内部,与现有的全部为EMC材质包封相比,本发明的封装结构具有更强的防水气侵入能力。
附图说明
图1为本发明所述IC塑料封装结构的示意图。
图2-1~图2-9为本发明的述IC塑料封装结构的制备方法的流程图。其中:
图2-1为所述LCP基板的示意图。
图2-2为在LCP基板表面组装芯片的示意图。
图2-3为将芯片采用环氧树脂进行包封的示意图。
图2-4为EMC包封层多余部分的示意图。
图2-5为去除多余的EMC包封层的示意图。
图2-6为在EMC包封层外部包封LCP密封层的示意图。
图2-7为LCP密封层和LCP预模塑层中多余部分的示意图。
图2-8为去除多余的LCP密封层和LCP预模塑层的示意图。
图2-9为得到独立封装体的示意图。
图中标号:引线框架1、LCP预模塑层2、EMC包封层3、LCP密封层4、芯片5。
具体实施方式
下面结合具体附图对本发明作进一步说明。
如图1所示:本发明所述IC塑料封装结构,包括LCP基板、EMC包封层3和LCP密封层4,LCP基板包括LCP预模塑层2和设置于LCP预模塑层2上表面的引线框架1;在所述LCP基板的上表面安装芯片5,芯片5由EMC包封层3封装于LCP基板的上表面,在EMC包封层3的外部包封一层LCP密封层4。
所述IC塑料封装结构的制备方法,包括以下步骤:
(1)如图2-1所示,在引线框架1的下表面采用LCP材质通过预模塑形成LCP基板;
(2)如图2-2所示,采用标准的装片、键合工艺在LCP基板上表面组装芯片5;
(3)如图2-3所示,采用压缩模或注塑模工艺,将组装后的芯片5上采用环氧树脂进行包封,得到EMC包封层3;
(4)根据产品的形状、尺寸要求,对步骤(3)完成EMC包封的封装体,计算得到多余的EMC包封层3的位置;如图2-4所示,EMC包封层3中虚线以外的部分为多余的部分;
(5)如图2-5所示,采用机械加工方法,将图2-4中虚线以外多余的EMC包封层3去除;
(6)如图2-6所示,采用注射模的注射成型工艺,在EMC包封层3外部包封一层LCP材质,得到LCP密封层4;
(7)如图2-7所示,根据产品的形状、尺寸要求,对已经完成LCP密封层4的封装体,计算得到多余的LCP材质的位置;图2-7中,LCP密封层4和LCP预模塑层2中虚线以外的部分为多余的部分;
(8)如图2-8所示,采用机械加工方法,去除多余的LCP密封层4以及引线框架1下方多余的LCP预模塑层2;
(9)如图2-9所示,通过常规切中筋、去飞边、电镀、打印、成型方法将步骤(8)得到的半成品分割成型为独立的封装体。
在实际应用中,EMC包封层3和LCP密封层4的总厚度一般是在0.25~1.2mm,EMC包封层3厚度受限于其内部芯片的厚度,而LCP密封层4厚度受于LCP熔融状态下较弱的流动性,两者厚度目前看来没有必然关联。
本发明所述IC塑料封装结构,在引线框架上采用LCP(液晶聚合物)通过预模塑形成基板作为集成电路的封装基板,在该基板上完成装片、键合后,采用EMC(环氧树脂)通过压缩模或注塑模工艺将芯片及键合引线包封起来,并采用机械加工的方式进行初级加工成型EMC环氧树脂,再采用LCP将环氧树脂覆盖起来,然后将引脚周围多余的LCP通过机械加工的方法对LCP液晶聚合物进行二次成型,除去引脚周围多余的LCP,最后通过切中筋、去飞边、电镀、成型,形成一个完整独立的塑料封装体。本发明可解决LCP材料不能直接对引线键合的IC进行包封的问题,因其具有比普通EMC材料更佳的抵抗水气等侵蚀的能力,从而在高可靠塑料封装产品中有较好的应用前景。
Claims (7)
1.一种IC塑料封装结构,其特征是:包括LCP基板、EMC包封层(3)和LCP密封层(4),LCP基板包括LCP预模塑层(2)和设置于LCP预模塑层(2)上表面的引线框架(1);在所述LCP基板的上表面安装芯片(5),芯片(5)由EMC包封层(3)封装于LCP基板的上表面,在EMC包封层(3)的外部包封一层LCP密封层(4)。
2.一种IC塑料封装结构的制备方法,其特征是,包括以下步骤:
(a)在引线框架(1)的下表面采用LCP材质通过预模塑形成LCP基板;
(b)在LCP基板上表面组装芯片(5);
(c)将组装后的芯片(5)采用环氧树脂进行包封,得到EMC包封层(3);
(d)根据产品的形状、尺寸要求,去除多余的EMC包封层(3);
(e)在EMC包封层(3)外部包封一层LCP材质,得到LCP密封层(4);
(f)根据产品的形状、尺寸要求,去除多余的LCP密封层(4)以及引线框架(1)下方多余的LCP预模塑层(2);
(g)将步骤(f)得到的半成品分割成型为独立的封装体。
3.如权利要求2所述的IC塑料封装结构的制备方法,其特征是:在所述LCP基板上表面采用装片、键合工艺组装芯片(5)。
4.如权利要求2所述的IC塑料封装结构的制备方法,其特征是:所述芯片(5)采用压缩模或注塑模工艺进行包封。
5.如权利要求2所述的IC塑料封装结构的制备方法,其特征是:在所述EMC包封层(3)外部采用注射模的注射成型工艺包封一层LCP密封层(4)。
6.如权利要求2所述的IC塑料封装结构的制备方法,其特征是:所述步骤( f)得到的封装体经切中筋、去飞边、电镀、打印、成型,得到独立的封装体。
7.如权利要求2所述的IC塑料封装结构的制备方法,其特征是:所述EMC包封层(3)和LCP密封层(4)的总厚度为0.25~1.2mm。
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JPH0927573A (ja) * | 1995-07-13 | 1997-01-28 | Mitsubishi Electric Corp | 半導体装置 |
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