CN106676625B - Air blowing device for drawing silicon core - Google Patents
Air blowing device for drawing silicon core Download PDFInfo
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- CN106676625B CN106676625B CN201710092523.7A CN201710092523A CN106676625B CN 106676625 B CN106676625 B CN 106676625B CN 201710092523 A CN201710092523 A CN 201710092523A CN 106676625 B CN106676625 B CN 106676625B
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- air inlet
- blowing
- air
- silicon core
- inlet channel
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a blowing device for drawing silicon cores, which relates to the field of artificial crystals, and is characterized in that a blowing nozzle (6) is arranged around each silicon core, and a plurality of blowing holes (11) are formed in the blowing nozzle, so that gas blown out of the blowing holes uniformly blows to each silicon core along a plurality of directions. The rapid and uniform cooling of the silicon core can improve the drawing speed of the crystal, increase the diameter of the drawn silicon core, and increase the diameter of the silicon core, so that the growth speed of the silicon core in a reducing furnace is increased, thereby improving the production efficiency.
Description
[ field of technology ]
The invention relates to the field of artificial crystals, in particular to a blowing device for improving the crystallization speed of a silicon core during silicon core drawing.
[ background Art ]
In prior art silicon core pulling processes, seed crystals are typically used for seeding. And drawing the silicon core after the seeding is completed. During this process, the seed crystal is held by the seed chuck. After the high-frequency coil melts the end head of the raw material rod into liquid locally, the seed chuck drives the seed crystal to descend, and the seed crystal passes through the drawing hole of the high-frequency coil and is inserted into the solution at the upper end of the raw material rod. And then the seed crystal chuck drives the seed crystal to rise, the seed crystal drives the solution to rise and recrystallize, and finally the silicon core with the required length is formed.
During the ascent of the seed crystal with the melt, the melt gradually cools and recrystallizes as it leaves the drawing hole of the high frequency coil. At the moment, the lifting speed of the upper shaft driving the seed crystal to lift is slower, when the silicon core with the diameter of &8mm is drawn, the lifting speed of the upper shaft is 14mm/min, and when the silicon core with the diameter of &10mm is drawn, the lifting speed of the upper shaft is 12mm/min, and the diameter of the drawn silicon core is generally between &8 and &10 mm. The larger the diameter of the drawn silicon core, the faster the growth speed of the silicon core in a reducing furnace is, and the higher the production efficiency is, so that the improvement of the production efficiency of the silicon core and the increase of the diameter of the silicon core are one of technical requirements in the field.
In order to solve the above-mentioned problems, the applicant has filed a patent application (patent application No. 201410175547.5, application date 2014, 04, 21, publication No. CN105002556 a) for "a device for increasing crystallization rate of a silicon core when drawing the silicon core". This application, which is incorporated by reference in this application, effectively increases the crystallization rate of the silicon core by means of a blowing device (see fig. 1 for a specific structure).
Although the above patent application solves the problem of slow crystallization speed of the silicon core, the crystallization speed of the newly drawn silicon core is inconsistent due to the instability of continuous blowing in the process of drawing the silicon core, and the crystal quality is affected.
[ invention ]
The applicant has found that the main cause of the inconsistent crystallization rate of freshly drawn silicon is the uneven distribution of the air flow to the silicon by the blowing means, thereby causing the difference in crystallization rate of the silicon.
The invention provides a blowing device for improving the crystallization speed of a silicon core during silicon core drawing, which ensures that the gas finally blown to the silicon core is more uniform and stable by improving the structure of the blowing device, thereby solving the problem of the crystallization speed uniformity of the newly drawn silicon core.
The principles of the present invention include two aspects: firstly, in the cooling process of the silicon cores, each silicon core is blown in different directions, so that the cooling of the silicon cores is more uniform; and secondly, the gas entering the blowing device is buffered and redistributed for a plurality of times by adopting a multi-stage gas inlet pipe mode, so that the uniformity of gas distribution and flow is realized.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
and a blowing nozzle is arranged around each silicon core, and a plurality of blowing holes are formed in the blowing nozzle, so that the gas blown out of the blowing holes is uniformly blown to the silicon cores along a plurality of directions.
In order to stabilize the air flow, one or more annular air inlet channels can be arranged at the upstream of the air blowing nozzle, the air blowing nozzle is communicated with the annular air inlet channels through connecting pipes, and the annular air inlet channels are communicated with each other through a plurality of air inlet holes, so that the air flow entering the air blowing device is distributed for a plurality of times in the air inlet channels and the air blowing rings, and the homogenization of the blown air flow is realized.
In a preferred embodiment, the air inlet channel may be a plurality of parallel stacked annular channels, and the cooling air enters the air blowing device through the air inlet pipe, then enters the second air inlet channel through the first air inlet channel, then enters the third air inlet channel through the connecting pipe, and finally is blown to the silicon core through the air blowing hole.
The first air inlet channel and the second air inlet channel are arranged in the same air blowing ring, the first air inlet channel is arranged above the air blowing ring, the second air inlet channel is arranged below the air blowing ring, and the first air inlet channel and the second air inlet channel are mutually communicated through a plurality of air inlets.
The air blowing nozzle is arranged below the air blowing ring, the third air inlet channel is positioned inside the air blowing nozzle, the second air inlet channel is communicated with the third air inlet channel through the connecting pipe, the air blowing hole is arranged on the air blowing nozzle, evenly surrounds the periphery of the silicon core and is aligned to the crystallization area of the silicon core.
In order to facilitate maintenance, a drain outlet is arranged at the position of the annular opening A of the air blowing ring, which corresponds to the end parts of the first air inlet channel and the second air inlet channel, and a blocking screw is arranged at the drain outlet.
The air blowing ring can be further provided with a plurality of fixing columns for installing the guide plate.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
by adopting the technical scheme of the invention, the problem of uneven cooling of the silicon core in the prior art is solved. The rapid and uniform cooling of the silicon core can improve the drawing speed of the crystal, increase the diameter of the drawn silicon core, and increase the diameter of the silicon core, so that the growth speed of the silicon core in a reducing furnace is increased, thereby improving the production efficiency.
[ description of the drawings ]
FIG. 1 is a prior art blowing apparatus as described above;
FIG. 2 is a schematic perspective view of a preferred embodiment of the present invention;
FIG. 3 is a schematic view of the embodiment of FIG. 2 in another orientation;
FIG. 4 is a schematic top view of the embodiment of FIG. 2;
FIG. 5 is a schematic view of the cross-sectional structure A-A of the structure of FIG. 4;
FIG. 6 is a schematic view of a cross-sectional B-B configuration of the structure of FIG. 4;
FIG. 7 is a schematic diagram of a cross-sectional C-C configuration of the structure of FIG. 4.
The correspondence between the reference numerals and the components in fig. 2-7 is:
1. an air inlet pipe; 2. a cover plate A; 3. fixing the column; 4. a gas blowing ring; 5. a connecting pipe; 6. an air blowing nozzle; 7. plugging a screw; 8. an opening A; 9. a cover plate B; 10. an opening B; 11. a blow hole; 12. a cover plate C; 13. a first air intake passage; 14. a second intake passage; 15. an air inlet hole; 16. and a third air intake passage.
[ detailed description ] of the invention
As described above, the main concept of the present invention is to buffer and disperse the gas in a multi-stage gas inlet manner to realize homogenization of the gas; simultaneously, each silicon core is blown in different directions, so that the cooling of the silicon core is more uniform.
The invention is described in further detail below in connection with a preferred embodiment.
Fig. 1 is a schematic view of a blowing device disclosed in a patent application of "a device for increasing crystallization speed of a silicon core when drawing the silicon core". The air blowing device comprises an air inlet pipe, an air blowing ring and air blowing holes, and air flows are directly blown to the silicon core through the air blowing ring through the air blowing holes.
Figures 2-7 illustrate in detail a preferred embodiment of the blowing device of the present invention.
As shown in fig. 2, the blowing device of the present invention includes an air inlet pipe 1, a blowing ring 4, a connection pipe 5, and a blowing nozzle 6.
As shown in fig. 5, a first air inlet channel 13 is provided above the air blowing ring 4, and a second air inlet channel 14 is provided below the air blowing ring 4. The first air intake passage 13 and the second air intake passage 14 communicate through an air intake hole 15.
The air inlet pipe 1 is arranged on the outer edge surface of the air blowing ring 4, one end of the air inlet pipe 1 is communicated with an air inlet pipeline in the furnace chamber, and the other end of the air inlet pipe is communicated with the first air inlet channel 13.
A plurality of blowing nozzles 6 are arranged below the blowing ring 4, and the blowing nozzles 6 are communicated with a second air inlet channel 14 through a connecting pipe 5. The number and the positions of the blowing nozzles 6 are consistent with those of drawing holes arranged on the high-frequency coil, and the blowing holes 11 on the blowing nozzles 6 are aligned with the crystallization area of the silicon core.
As shown in fig. 3, the blowing nozzle 6 has an annular opening structure, i.e., an opening B10 is provided. The third air inlet channel 16 is arranged on the air blowing nozzle 6 and is communicated with the air blowing hole 11 arranged on the inner edge surface of the air blowing nozzle 6.
The blowing ring 4 is also provided with an opening A8. At the opening, two corresponding positions of the first air inlet channel 13 and the second air inlet channel 14 are respectively provided with a drain outlet, and the drain outlet is provided with a plugging screw 7.
As shown in fig. 2, a plurality of fixing posts 3 are arranged on the blowing ring 4, and the fixing posts 3 can be used for installing a guide plate (the guide plate is separately patented).
As shown in fig. 5, the first air inlet channel 13 is an upper groove which is arranged above the air blowing ring 4 and is recessed downwards, a cover plate A2 is arranged at the opening end of the upper groove, and the upper groove and the cover plate A2 form the first air inlet channel 13. The first air inlet channel 13 has an annular opening (C-shaped) structure, and two ends of the first air inlet channel are respectively provided with a sewage outlet.
The second air inlet channel 14 is a lower groove which is arranged below the air blowing ring 4 and is recessed upwards, a cover plate B9 is arranged at the opening end of the lower groove, and the lower groove and the cover plate B9 form the second air inlet channel 14. The second air inlet channel 14 has an annular opening (C-shaped) structure, and two ends of the second air inlet channel are respectively provided with a sewage outlet.
As shown in fig. 6, in order to communicate the second air intake passage 14 with the first air intake passage 13, a plurality of air intake holes 15 are provided at the bottom of the lower recess.
In operation, as shown in fig. 5, gas first enters the first intake passage 13 via the intake pipe 1 and enters the second intake passage 14 via the intake hole 15. The gas in the second gas inlet channel 14 is more uniform relative to the gas in the first gas inlet channel 13 through the dispersion of the gas inlet holes 15.
As shown in fig. 5-7, the blowing nozzle 6 is also provided with a C-shaped structure, a concave groove is arranged above the blowing nozzle 6, a cover plate C12 is arranged at the opening end of the groove, the cover plate C and the cover plate C form a third air inlet channel 16, and the third air inlet channel 16 is connected with the second air inlet channel 14 through a connecting pipe 5. A plurality of air blowing holes 11 are arranged on the inner edge surface of the air blowing nozzle 6, and the air blowing holes 11 are communicated with a third air inlet channel 16 and correspond to the crystallization area of the silicon core.
The gas in the gas-blowing ring 4 may be any one of helium, neon, argon, krypton, xenon, and radon.
In this embodiment, the gas for cooling the silicon core enters the blowing device through the gas inlet pipe 1, enters the second gas inlet channel 14 through the first gas inlet channel 13, then enters the third gas inlet channel 16 through the gas inlet hole 15, and finally is blown to the silicon core through the gas blowing hole 11. The gas blown to the silicon core is more uniform and stable, thereby ensuring the homogenization of the silicon core crystallization.
Taking a silicon core furnace for drawing a silicon core as an example, after the upper end of a raw material rod in the furnace body is melted, slowly passing a seed crystal driven by a seed crystal chuck through a drawing hole on a high-frequency coil through a control system, inserting the seed crystal into molten liquid at the upper end of the raw material rod, slowly lifting the seed crystal driven by the seed crystal chuck through the control system after the end of the seed crystal and the molten liquid at the upper end of the raw material rod are fused into a whole, and gradually starting to crystallize and form the required silicon core after the molten liquid leaves the drawing hole on the high-frequency coil. At this time, the control system opens the air inlet valve, and argon enters the first air inlet channel 13 on the air blowing ring 4 through the air inlet pipe 1, and then dispersedly enters the second air inlet channel 14 through the air inlet hole 15. The gas in the second air inlet channel 14 enters the third air inlet channel 16 through the connecting pipe 5, and then the gas is blown to the crystallization area of the silicon core through the air blowing hole 11, so that the rapid cooling of the crystallization area is realized.
Taking a silicon core with a drawing diameter of 10mm as an example, after the blowing device is adopted, the lifting speed of the upper shaft, namely the drawing speed of the silicon core, is 14mm/min; the silicon core with the diameter of 14mm is drawn, and the lifting speed of the upper shaft is 10mm/min. Thereby greatly increasing the drawing speed of the crystal. The silicon core crystallization speed is increased, so that the drawable diameter of the silicon core is increased.
Claims (3)
1. The utility model provides a gas blowing device for silicon core draws, includes intake pipe (1), gas blowing nozzle (6) and gas blowing hole (11), its characterized in that: a blowing nozzle (6) is arranged around each silicon core, and a plurality of blowing holes (11) are formed in the blowing nozzle (6), so that the gas blown out of the blowing holes (11) is uniformly blown to each silicon core along a plurality of directions;
one or more air inlet channels are arranged at the upstream of the air blowing nozzle (6), the air blowing nozzle (6) is communicated with the air inlet channels through a connecting pipe (5), and the air inlet channels are communicated with each other through a plurality of air inlet holes (15), so that air flow entering the air blowing device is redistributed in the air inlet channels and the air blowing nozzle (6);
the air inlet channels are a plurality of parallel and overlapped annular channels, cooling air enters the second air inlet channel (14) from the first air inlet channel (13) after entering the air inlet pipe (1), enters the third air inlet channel (16) from the connecting pipe (5), and is blown to the silicon core from the air blowing hole (11);
the first air inlet channel (13) and the second air inlet channel (14) are both arranged in the annular air blowing ring (4), the first air inlet channel (13) is arranged above the air blowing ring (4), and the second air inlet channel (14) is arranged below the air blowing ring (4) and communicated with each other through a plurality of air inlet holes (15);
a plurality of blowing nozzles (6) are arranged below the blowing ring (4), a third air inlet channel (16) is arranged inside the blowing nozzles (6), the third air inlet channel is communicated with a second air inlet channel (14) through a connecting pipe (5), and a blowing hole (11) is arranged on the blowing nozzle (6) and is aligned with a crystallization area of a silicon core.
2. The blowing device of claim 1, wherein: the air blowing ring (4) is provided with an opening A (8), drain outlets are arranged at positions of the opening A (8) corresponding to the ends of the first air inlet channel (13) and the second air inlet channel (14), and plugging screws (7) are arranged at the drain outlets.
3. The blowing device of claim 1, wherein: the blowing ring (4) is provided with a plurality of fixing columns (3) for installing the guide plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710092523.7A CN106676625B (en) | 2017-02-21 | 2017-02-21 | Air blowing device for drawing silicon core |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710092523.7A CN106676625B (en) | 2017-02-21 | 2017-02-21 | Air blowing device for drawing silicon core |
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| Publication Number | Publication Date |
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| CN106676625A CN106676625A (en) | 2017-05-17 |
| CN106676625B true CN106676625B (en) | 2023-05-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710092523.7A Active CN106676625B (en) | 2017-02-21 | 2017-02-21 | Air blowing device for drawing silicon core |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111379022A (en) * | 2020-03-30 | 2020-07-07 | 戚振华 | Device for cooling silicon core drawing area during drawing of silicon core |
| CN113481589A (en) * | 2021-07-08 | 2021-10-08 | 牛伟 | Cooling device for simultaneously drawing multiple silicon cores by using crushed silicon materials |
| WO2023179627A1 (en) * | 2022-03-21 | 2023-09-28 | 洛阳长缨新能源科技有限公司 | Crystal cooling apparatus for simultaneously drawing multiple crystals and artificial crystal preparation device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009007228A (en) * | 2007-06-29 | 2009-01-15 | National Institute Of Advanced Industrial & Technology | Spherical crystal production method and production apparatus |
| CN202030860U (en) * | 2011-01-20 | 2011-11-09 | 王楚雯 | Single crystal ingot manufacturing device |
| CN103966668A (en) * | 2014-05-30 | 2014-08-06 | 江苏中电振华晶体技术有限公司 | Growth method for controlling diameter of rod-like sapphire crystal based on protective atmosphere |
| CN104862775A (en) * | 2015-06-09 | 2015-08-26 | 江苏中电振华晶体技术有限公司 | Growth device for sapphire crystal hemisphere cover and growth method for sapphire crystal hemisphere cover |
| CN105803521A (en) * | 2014-12-29 | 2016-07-27 | 有研光电新材料有限责任公司 | Single crystal furnace for Kyropoulos method, seed crystal protection structure and crystal growth control method |
| CN106319621A (en) * | 2016-09-22 | 2017-01-11 | 东莞市联洲知识产权运营管理有限公司 | Large-size czochralski silicon single crystal growth method |
| CN206494987U (en) * | 2017-02-21 | 2017-09-15 | 洛阳金诺机械工程有限公司 | A kind of blowning installation drawn for silicon core |
-
2017
- 2017-02-21 CN CN201710092523.7A patent/CN106676625B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009007228A (en) * | 2007-06-29 | 2009-01-15 | National Institute Of Advanced Industrial & Technology | Spherical crystal production method and production apparatus |
| CN202030860U (en) * | 2011-01-20 | 2011-11-09 | 王楚雯 | Single crystal ingot manufacturing device |
| CN103966668A (en) * | 2014-05-30 | 2014-08-06 | 江苏中电振华晶体技术有限公司 | Growth method for controlling diameter of rod-like sapphire crystal based on protective atmosphere |
| CN105803521A (en) * | 2014-12-29 | 2016-07-27 | 有研光电新材料有限责任公司 | Single crystal furnace for Kyropoulos method, seed crystal protection structure and crystal growth control method |
| CN104862775A (en) * | 2015-06-09 | 2015-08-26 | 江苏中电振华晶体技术有限公司 | Growth device for sapphire crystal hemisphere cover and growth method for sapphire crystal hemisphere cover |
| CN106319621A (en) * | 2016-09-22 | 2017-01-11 | 东莞市联洲知识产权运营管理有限公司 | Large-size czochralski silicon single crystal growth method |
| CN206494987U (en) * | 2017-02-21 | 2017-09-15 | 洛阳金诺机械工程有限公司 | A kind of blowning installation drawn for silicon core |
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