CN108411371A - A kind of seed-grain method crystal growth orientation accurately controls formwork and its manufacturing method - Google Patents
A kind of seed-grain method crystal growth orientation accurately controls formwork and its manufacturing method Download PDFInfo
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- CN108411371A CN108411371A CN201810562755.9A CN201810562755A CN108411371A CN 108411371 A CN108411371 A CN 108411371A CN 201810562755 A CN201810562755 A CN 201810562755A CN 108411371 A CN108411371 A CN 108411371A
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- formwork
- crystal growth
- stage amplifier
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/02—Sand moulds or like moulds for shaped castings
- B22C9/04—Use of lost patterns
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/20—Measures not previously mentioned for influencing the grain structure or texture; Selection of compositions therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention discloses a kind of seed-grain method crystal growth orientation and accurately controls formwork, including sequentially connected first stage amplifier, level-one seeding section, two-stage amplifier and two level seeding section, first stage amplifier and two-stage amplifier are the conical shell of both ends open, level-one seeding section and two level seeding section are in the cylindrical housings of both ends open, one end that first stage amplifier is relatively large in diameter is tightly connected with level-one seeding section, the other end of level-one seeding section is sealedly connected with annular baffle, the inner ring of annular baffle is tightly connected with the smaller one end of two-stage amplifier diameter, one end that two-stage amplifier is relatively large in diameter and one end of two level seeding section are tightly connected.A kind of seed-grain method crystal growth is orientated the manufacturing method for accurately controlling formwork, manufactures wax-pattern first, and be coated with ceramics in wax-pattern outer wall, then through dewaxing and roasting obtains formwork.Seed-grain method crystal growth orientation of the present invention accurately controls formwork and manufacturing method improves the production efficiency that seed-grain method prepares single crystal alloy.
Description
Technical field
The present invention relates to single crystal growth apparatus technical fields, and accurate control is orientated more particularly to a kind of seed-grain method crystal growth
Molding shell and its manufacturing method.
Background technology
Directional solidification processes are mainly applied in the preparation of single crystal alloy, and required conjunction is obtained using spiral crystal separation method and seed-grain method
The single crystal organization of gold.Spiral crystal separation method is present commonly used method for preparing single crystal, and spiral crystal separation method refers to passing through screw type
The coupling of crystal growth channel and crystal grain preferential growth under the conditions of unidirectional hot-fluid gradually eliminates crystal grain and prepares monocrystal
Method.Seed-grain method refers to the seed crystal that certain crystal orientation is cut on the excellent monocrystal of selection, using outside seed crystal face
Epitaxial growth goes out monocrystal, and the crystal orientation of obtained monocrystal is consistent with the crystal orientation of seed crystal.
The advantages of crystal separation method is simple for process, is not likely to produce stray crystal, but the disadvantage is that can only prepare alloy preferential growth orientation
Single crystal organization, crystal orientation cannot control.The advantages of seed-grain method is can to accurately control crystal orientation, but the disadvantage is that cost
Relatively high, complex process easy tos produce stray crystal, and control difficulty is big, and seed crystal used in traditional seed-grain method is cylindrical structure, seed crystal
Secondary orientation is not easy to demarcate.
Invention content
The object of the present invention is to provide a kind of seed-grain method crystal growth orientations to accurately control formwork and its manufacturing method, with solution
Certainly the above-mentioned problems of the prior art reduces the cost of seed-grain method, improves the production efficiency that seed-grain method prepares single crystal alloy, and
Avoid the generation of stray crystal in seed-grain method.
To achieve the above object, the present invention provides following schemes：The present invention provides a kind of seed-grain method crystal growth orientation
Formwork, including sequentially connected first stage amplifier, level-one seeding section, two-stage amplifier and two level seeding section are accurately controlled, it is described
First stage amplifier and the two-stage amplifier are the conical shell of both ends open, and the level-one seeding section and the two level are drawn
Brilliant section is in the cylindrical housings of both ends open, and one end that the first stage amplifier is relatively large in diameter is sealed with the level-one seeding section
Connection, the other end of the level-one seeding section are sealedly connected with annular baffle, the inner ring of the annular baffle and described two
The smaller one end of grade amplifier diameter is tightly connected, one end that the two-stage amplifier is relatively large in diameter and the two level seeding section
One end is tightly connected.
Preferably, the taper of the first stage amplifier is more than the taper of the two-stage amplifier, the first stage amplifier
Basal diameter is equal with the basal diameter of the two-stage amplifier.
Preferably, the diameter of the level-one seeding section and the diameter of the two level seeding section are equal.
Preferably, the taper of the two-stage amplifier is 20 ° -30 °.
Preferably, the length of the length of the level-one seeding section and the two level seeding section is 10-15mm.
Preferably, the length of the first stage amplifier is the 1/3 of seed crystal height.
Preferably, the first stage amplifier, the level-one seeding section, the two-stage amplifier, the annular baffle and
The material of the two level seeding section is ceramics.
Preferably, the first stage amplifier, the level-one seeding section, the two-stage amplifier, the annular baffle and
The two level seeding section is integrally formed.
The manufacturing method for accurately controlling formwork, including following step are orientated the present invention also provides a kind of seed-grain method crystal growth
Suddenly：
(1) it makes seed-grain method crystal growth orientation and accurately controls the Mold Making seed-grain method crystal growth orientation of formwork accurately
Control the wax-pattern of formwork；The mold is provided with wax injection nozzle, flowing lumen and several and the seed-grain method crystal growth and is orientated essence
Really the identical cavity of shape of control formwork, described equal one end of cavity are connected to the circulation groove, the cavity other end connection
There is cushion chamber；
(2) it is coated with the ceramic refractory of 10mm thickness in the outer wall of the wax-pattern, painting is then hung with into ceramic refractory
Larger one end of opening of wax-pattern be positioned in dewaxing kettle dewax downward；
(3) after the completion of dewaxing, after the shell that ceramic refractory is formed is placed on 1000 DEG C of horizontal kiln roasting 10h
It obtains seed-grain method crystal growth orientation and accurately controls formwork.
Preferably, the mold includes upper mold and lower mold, the wax injection nozzle, the flowing lumen, the cavity and institute
State cushion chamber uniform half be located at the upper mold, the other half be located at the lower mold, the upper mold and the lower mold are removable
Unload connection.
Seed-grain method crystal growth orientation of the present invention accurately controls formwork and its manufacturing method achieves compared with the existing technology
Following technique effect：
Seed-grain method crystal growth of the present invention, which is orientated, to be accurately controlled formwork and can simplify calibration to the secondary orientation of seed crystal, is inhibited
With the appearance for excluding crystal growth initiating process stray crystal, it is ensured that obtain required crystal orientation；Seed-grain method monocrystalline of the present invention
The manufacturing method that the orientation of growth accurately controls formwork is simple, simplifies the preparation flow of formwork, and it is strong to reduce operating personnel's labour
Degree, improves the production efficiency of formwork.
Description of the drawings
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the present invention
Example, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is that seed-grain method crystal growth of the present invention is orientated the structural schematic diagram for accurately controlling formwork；
Fig. 2 is the structural representation that seed-grain method crystal growth of the present invention is orientated upper mold in the manufacturing method for accurately controlling formwork
Figure；
Wherein, 1- seed crystals, 2- first stage amplifiers, 3- level-one seeding sections, 4- two-stage amplifiers, 5- two level seeding sections, 6- circles
Ring baffle, 7- wax injection nozzles, 8- flowing lumens, 9- cavitys, 10- cushion chambers, 11- positioning pins, 12- upper molds.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of seed-grain method crystal growth orientations to accurately control formwork and its manufacturing method, with solution
Problem certainly of the existing technology reduces the cost of seed-grain method, improves seed-grain method and prepares the production efficiency of single crystal alloy, and avoids
The generation of stray crystal in seed-grain method.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
As shown in Figure 1, it includes that sequentially connected level-one is put that the present embodiment seed-grain method crystal growth orientation, which accurately controls formwork,
Big device 2, level-one seeding section 3, two-stage amplifier 4 and two level seeding section 5, first stage amplifier 2 and two-stage amplifier 4 are that both ends are opened
The conical shell of mouth, level-one seeding section 3 and two level seeding section 5 are in the cylindrical housings of both ends open, first stage amplifier 2
For placing seed crystal 1, one end that first stage amplifier 2 is relatively large in diameter seals the opening of the smaller one end of diameter with level-one seeding section 3
The other end of connection, level-one seeding section 3 is sealedly connected with annular baffle 6, inner ring and the two-stage amplifier 4 of annular baffle 6
The smaller one end of diameter is tightly connected, and one end that two-stage amplifier 4 is relatively large in diameter and one end of two level seeding section 5 are tightly connected.
It is worth noting that, the taper of first stage amplifier 2 is more than the taper of two-stage amplifier 4, the taper of two-stage amplifier 4
It is 20 ° -30 °；The basal diameter of first stage amplifier 2 is equal with the basal diameter of two-stage amplifier 4, the length of first stage amplifier 2
It is the 1/3 of 1 height of seed crystal.
The diameter of level-one seeding section 3 and the diameter of two level seeding section 5 are equal, the length and two level seeding of level-one seeding section 3
The length of section 5 is 10-15mm.
First stage amplifier 2, level-one seeding section 3, two-stage amplifier 4, the material of annular baffle 6 and two level seeding section 5 are equal
For ceramics；And first stage amplifier 2, level-one seeding section 3, two-stage amplifier 4, annular baffle 6 and the one of two level seeding section 5 at
Type.
The present embodiment seed-grain method crystal growth orientation accurately controls formwork and is cut in single crystal super alloy first when in use
It is respectively 2.5-3mm to take length and width, and the needs of high-order 27mm are primary to be orientated, the cuboid seed crystal 1 of secondary orientation, and by the seed crystal 1
One end is stretched into the cavity of 2 left end of first stage amplifier, then carries out producing for single crystal super alloy according to given technique；Seed
The length and width of crystalline substance 1 is equal, i.e. the section of seed crystal 1 is square, compared with traditional cylinder seed crystal, the seed crystal of cuboid
The orientation of crystal corresponding to 1 four sides is required secondary orientation, to by accurately controlling 1 two orientations of seed crystal
Achieve the purpose that accurately control the secondary orientation of monocrystalline, has simplified the calibration to the secondary orientation of seed crystal 1, help to accurately control
The secondary orientation of seed crystal 1；Seed crystal 1 can be limited in setting annular baffle 6 in the front end that seed crystal 1 is grown i.e. necking down structure to grow just
The stray crystal growing space that stage beginning is formed in 1 periphery of seed crystal, inhibits the growth of stray crystal, ensures that seed crystal 1 is used as single grain growth,
To ensure to obtain required crystal orientation.
The present embodiment also provides a kind of seed-grain method crystal growth and is orientated the manufacturing method for accurately controlling formwork, including following step
Suddenly：
(1) it makes seed-grain method crystal growth orientation and accurately controls the Mold Making seed-grain method crystal growth orientation of formwork accurately
Control the wax-pattern of formwork；Mold is provided with wax injection nozzle 7, flowing lumen 9 and four and seed-grain method crystal growth orientation and accurately controls mould
The identical cavity of shape of shell, the equal one end of cavity are connected to circulation groove, and the cavity other end is communicated with cushion chamber 10, cushion chamber 10
Wax liquor when can ensure casting in a mold, which is arranged, can be filled up completely the left end of cavity 9, ensure the integrity degree of wax-pattern；In this reality
It applies in example, mold includes upper mold 12 and lower mold, and wax injection nozzle 7, flowing lumen 9, cavity and cushion chamber 10 uniform half are located at upper mold
Tool 12, the other half be located at lower mold, upper mold 12 is detachably connected with lower mold by positioning pin 11, and Fig. 2 show upper mold
12 structural schematic diagram (since the structure of lower mold is identical as the structure of upper mold 12, therefore no longer showing)；The mold can one
Secondary property prepares four seed-grain method crystal growths and is orientated the wax-pattern for accurately controlling formwork；It is worth noting that, being given birth to seed-grain method monocrystalline
The long size for being orientated the identical cavity of shape for accurately controlling formwork accurately controls the interior of formwork with seed-grain method crystal growth orientation
The size of portion's seed crystal cavity is identical；
(2) it is coated with the ceramic refractory of 10mm thickness in the outer wall of wax-pattern, then will apply the wax for hanging with ceramic refractory
The larger one end that is open of mould is positioned in dewaxing kettle downward to dewax；
(3) after the completion of dewaxing, after the shell that ceramic refractory is formed is placed on 1000 DEG C of horizontal kiln roasting 10h
It obtains seed-grain method crystal growth orientation and accurately controls formwork.
In the description of the present invention, it should be noted that the orientation or positional relationship of the instructions such as term "upper", "lower" is base
It in orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than indicates or imply
Signified device or element, which must have, deposits specific orientation, with specific azimuth configuration and operation, therefore should not be understood as to this
The limitation of invention.
Specific case is applied in the present invention, and principle and implementation of the present invention are described, above example
Illustrate the method and its core concept for being merely used to help understand the present invention；Meanwhile for those of ordinary skill in the art, according to
According to the thought of the present invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification
It should not be construed as limiting the invention.
Claims (10)
1. a kind of seed-grain method crystal growth orientation accurately controls formwork, it is characterised in that：Including sequentially connected first stage amplifier,
Level-one seeding section, two-stage amplifier and two level seeding section, the first stage amplifier and the two-stage amplifier are both ends open
Conical shell, the level-one seeding section and the two level seeding section are in the cylindrical housings of both ends open, the level-one
One end that amplifier is relatively large in diameter is tightly connected with the level-one seeding section, and the other end of the level-one seeding section is sealedly connected with
Annular baffle, the inner ring of the annular baffle are tightly connected with the smaller one end of the two-stage amplifier diameter, and described two
One end that grade amplifier is relatively large in diameter and one end of the two level seeding section are tightly connected.
2. seed-grain method crystal growth orientation according to claim 1 accurately controls formwork, it is characterised in that：The level-one is put
The taper of big device is more than the taper of the two-stage amplifier, the basal diameter of the first stage amplifier and the two-stage amplifier
Basal diameter is equal.
3. seed-grain method crystal growth orientation according to claim 1 accurately controls formwork, it is characterised in that：The level-one is drawn
The diameter of brilliant section and the diameter of the two level seeding section are equal.
4. seed-grain method crystal growth orientation according to claim 1 accurately controls formwork, it is characterised in that：The two level is put
The taper of big device is 20 ° -30 °.
5. seed-grain method crystal growth orientation according to claim 1 accurately controls formwork, it is characterised in that：The level-one is drawn
The length of the length of brilliant section and the two level seeding section is 10-15mm.
6. seed-grain method crystal growth orientation according to claim 1 accurately controls formwork, it is characterised in that：The level-one is put
The length of big device is the 1/3 of seed crystal height.
7. seed-grain method crystal growth orientation according to claim 1 accurately controls formwork, it is characterised in that：The level-one is put
The material of device, the level-one seeding section, the two-stage amplifier, the annular baffle and the two level seeding section greatly is pottery
Porcelain.
8. seed-grain method crystal growth orientation according to claim 1 accurately controls formwork, it is characterised in that：The level-one is put
Big device, the level-one seeding section, the two-stage amplifier, the annular baffle and the two level seeding section are integrally formed.
9. a kind of seed-grain method crystal growth is orientated the manufacturing method for accurately controlling formwork, which is characterized in that include the following steps：
(1) make seed-grain method crystal growth be orientated accurately control formwork Mold Making seed-grain method crystal growth orientation accurately control
The wax-pattern of formwork；The mold is provided with wax injection nozzle, flowing lumen and several and the seed-grain method crystal growth and is orientated accurate control
The identical cavity of shape of molding shell, described equal one end of cavity are connected to the circulation groove, and the cavity other end is communicated with slow
Rush chamber；
(2) it is coated with the ceramic refractory of 10mm thickness in the outer wall of the wax-pattern, then will apply the wax for hanging with ceramic refractory
The larger one end that is open of mould is positioned in dewaxing kettle downward to dewax；
(3) it after the completion of dewaxing, is obtained after the shell that ceramic refractory is formed is placed on 1000 DEG C of horizontal kiln roasting 10h
Seed-grain method crystal growth orientation accurately controls formwork.
10. seed-grain method crystal growth according to claim 9 is orientated the manufacturing method for accurately controlling formwork, feature exists
In：The mold includes upper mold and lower mold, and the wax injection nozzle, the flowing lumen, the cavity and the cushion chamber are uniform
Half be located at the upper mold, the other half be located at the lower mold, the upper mold is detachably connected with the lower mold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810562755.9A CN108411371B (en) | 2018-06-04 | 2018-06-04 | Mould shell for precisely controlling growth orientation of single crystal by seed crystal method and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810562755.9A CN108411371B (en) | 2018-06-04 | 2018-06-04 | Mould shell for precisely controlling growth orientation of single crystal by seed crystal method and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN108411371A true CN108411371A (en) | 2018-08-17 |
| CN108411371B CN108411371B (en) | 2023-06-16 |
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Cited By (8)
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| CN111101193A (en) * | 2020-01-10 | 2020-05-05 | 贵阳航发精密铸造有限公司 | Casting crystal-leading segment forming die capable of accurately controlling crystal orientation growth of single crystal blade |
| CN111168004A (en) * | 2020-01-20 | 2020-05-19 | 西安交通大学 | Method for forming single crystal part by gel casting integrated casting based on spiral crystal selector with seed crystal block embedded structure |
| CN111360234A (en) * | 2020-03-26 | 2020-07-03 | 成都航大新材料有限公司 | Single crystal high temperature alloy thin-wall casting based on secondary orientation control and preparation method thereof |
| CN112045169A (en) * | 2018-11-27 | 2020-12-08 | 安徽应流航源动力科技有限公司 | Casting method of monocrystalline high-temperature alloy blade capable of precisely controlling three-dimensional crystal orientation |
| CN113042687A (en) * | 2021-02-26 | 2021-06-29 | 贵阳航发精密铸造有限公司 | Casting module of large-size single crystal guide blade with controllable crystal orientation |
| CN113070454A (en) * | 2021-03-16 | 2021-07-06 | 贵阳航发精密铸造有限公司 | Casting device and method for non-preferred orientation single crystal guide hollow blade |
| CN113825577A (en) * | 2019-05-13 | 2021-12-21 | 赛峰飞机发动机公司 | Mould for manufacturing a component by casting metal and epitaxial growth and related manufacturing process |
| CN117444140A (en) * | 2023-12-22 | 2024-01-26 | 中国航发北京航空材料研究院 | Secondary orientation controllable polycrystalline test plate wax mould and preparation method of wax mould |
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| CN112045169A (en) * | 2018-11-27 | 2020-12-08 | 安徽应流航源动力科技有限公司 | Casting method of monocrystalline high-temperature alloy blade capable of precisely controlling three-dimensional crystal orientation |
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| CN111101193B (en) * | 2020-01-10 | 2022-01-28 | 贵阳航发精密铸造有限公司 | Casting crystal-leading segment forming die capable of accurately controlling crystal orientation growth of single crystal blade |
| CN111168004B (en) * | 2020-01-20 | 2021-03-23 | 西安交通大学 | Method for forming single crystal part by gel casting integrated casting based on spiral crystal selector with seed crystal block embedded structure |
| CN111168004A (en) * | 2020-01-20 | 2020-05-19 | 西安交通大学 | Method for forming single crystal part by gel casting integrated casting based on spiral crystal selector with seed crystal block embedded structure |
| CN111360234A (en) * | 2020-03-26 | 2020-07-03 | 成都航大新材料有限公司 | Single crystal high temperature alloy thin-wall casting based on secondary orientation control and preparation method thereof |
| CN111360234B (en) * | 2020-03-26 | 2021-08-03 | 成都航大新材料有限公司 | Preparation method of single crystal high-temperature alloy thin-wall casting based on secondary orientation control |
| CN113042687A (en) * | 2021-02-26 | 2021-06-29 | 贵阳航发精密铸造有限公司 | Casting module of large-size single crystal guide blade with controllable crystal orientation |
| CN113070454A (en) * | 2021-03-16 | 2021-07-06 | 贵阳航发精密铸造有限公司 | Casting device and method for non-preferred orientation single crystal guide hollow blade |
| CN117444140A (en) * | 2023-12-22 | 2024-01-26 | 中国航发北京航空材料研究院 | Secondary orientation controllable polycrystalline test plate wax mould and preparation method of wax mould |
| CN117444140B (en) * | 2023-12-22 | 2024-03-26 | 中国航发北京航空材料研究院 | Secondary orientation controllable polycrystalline test plate wax mould and preparation method of wax mould |
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