CN106670944A - Silicon wafer polishing method - Google Patents
Silicon wafer polishing method Download PDFInfo
- Publication number
- CN106670944A CN106670944A CN201611266972.0A CN201611266972A CN106670944A CN 106670944 A CN106670944 A CN 106670944A CN 201611266972 A CN201611266972 A CN 201611266972A CN 106670944 A CN106670944 A CN 106670944A
- Authority
- CN
- China
- Prior art keywords
- polishing
- silicon wafer
- silicon chip
- diameter
- cloth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a silicon wafer polishing method. A silicon wafer is put onto a large disk and rotates along with the large disk. Rotating polishing cloth is used for grinding the surface of the silicon wafer so as to polish the silicon wafer. The polishing cloth is round and formed by cutting a plurality of edges, and the adjacent scrap edges do not coincide. According to the cutting method, the polishing cloth is cut perpendicular to the radial direction, cutting is carried out from the circumferential top point to the circle center, and the cutting length L conforms to the formula that the ratio of the polishing head rotation speed to the large disk rotation speed times the ratio of the polishing head diameter to the large disk diameter and times the silicon wafer diameter. According to the silicon polishing method, a part of the edge of the round polishing cloth is cut off, the contact area of the polishing cloth with the edge of the silicon wafer is reduced, and the edge polishing amount in the polishing process can be reduced. By means of the silicon wafer polishing method, the reject ratio of silicon wafer polishing is reduced to 0.5% from 3.4%.
Description
Technical field
The present invention relates to a kind of silicon chip polishing method.
Background technology
Existing glossing is that the rotation and ramming head rotation by polishing machine platform deep bid combines to reach and remove silicon chip surface
Damage layer, it is ensured that silicon chip surface flatness requirement.At present the paster mode of silicon wafer polishing is the unified plane of reference on ceramic disk
Outwardly, in polishing process, the pressure that silicon chip is subject to is identical, but the angular velocity in rotating is consistent, but the different impact of linear velocity,
The reference plane position amount of skimming for easily causing silicon chip edge is excessive, affects silicon wafer parameters.
The content of the invention
An object of the present invention is to overcome deficiency of the prior art, there is provided a kind of high silicon wafer polishing side of yield
Method.
To realize object above, the present invention is achieved through the following technical solutions：
Silicon chip polishing method, it is characterised in that the silicon chip is positioned on deep bid and with big disc spins；Using the throwing of rotation
Cloth grinding silicon chip surface is polishing；The throwing cloth is formed for round-shaped cutting multiple summits, and adjacent two trimmings are misaligned；Cutting
Method is to throw cloth perpendicular to radial cuts, and Cutting Length is that size L cut from circumference summit to center of circle direction is：Ramming head rotating speed
With deep bid rotating ratio × ramming head diameter and deep bid diameter ratio × silicon chip diameter.
Technology according to the present invention scheme, along the circumferential direction uniformly cuts four edges.
Technology according to the present invention scheme, a diameter of 96cm of the throwing cloth, Cutting Length L is 4-6cm.
Silicon chip polishing method in the present invention, by circular throwing cloth edge a part of part is cut off, and is reduced and is thrown cloth and silicon chip
EDGE CONTACT area, it is possible to decrease the amount of skimming at edge in polishing process.Using the silicon chip polishing method in the present invention, silicon chip
Polishing fraction defective is down to 0.5% by 3.4%.
Description of the drawings
Fig. 1 is the polishing cloth structural representation that the present invention is used.
Specific embodiment
The present invention is described in detail below in conjunction with the accompanying drawings：
Silicon chip polishing method, the silicon chip is positioned on deep bid and with big disc spins；Using the throwing cloth as shown in Figure 1 of rotation
1 grinding silicon chip surface is polishing；The throwing cloth 1 is formed for round-shaped cutting multiple summits.After cutting, form trimming on cloth throwing
11, adjacent two trimmings 11 are misaligned；Part beyond trimming 11 is removed.Cutting method is to throw cloth 1 perpendicular to radial cuts,
Trimming 11 is perpendicular to the radial direction of throwing cloth 1.Cutting Length L is the size (unit cut from circumference summit to center of circle direction：Centimetre)：Throw
Head rotating speed and deep bid rotating ratio × ramming head diameter and deep bid diameter ratio × silicon chip diameter, silicon chip diameter units are centimetre.Such as scheming
In shown example, four edges are along the circumferential direction uniformly cut.
In an application example of the present invention, 35 revs/min of ramming head rotating speed, 30 revs/min of deep bid rotating speed, ramming head diameter
392mm, deep bid diameter 960mm, silicon chip diameter 125mm.Described to throw a diameter of 96cm of cloth, Cutting Length L is 5.6cm.Using cutting
Throwing cloth polishing after cutting, silicon wafer polishing fraction defective is down to 0.5% by 3.4%.Inventor Jing is tested, using the calculating side of the present invention
Formula cuts the throwing cloth of acquisition after calculating, its polished silicon slice can reach above effect.
Embodiment in the present invention is only used for that the present invention will be described, does not constitute the restriction to right,
Other replacements being substantially equal to that those skilled in that art are contemplated that, in the scope of the present invention.
Claims (3)
1. silicon chip polishing method, it is characterised in that the silicon chip is positioned on deep bid and with big disc spins；Using the throwing cloth of rotation
Grinding silicon chip surface is polishing；The throwing cloth is formed for round-shaped cutting multiple summits, and adjacent two trimmings are misaligned；Cutting side
Method is to throw cloth perpendicular to radial cuts, and Cutting Length is that size L cut from circumference summit to center of circle direction is：Ramming head rotating speed with
Deep bid rotating ratio × ramming head diameter and deep bid diameter ratio × silicon chip diameter.
2. silicon chip polishing method according to claim 1, it is characterised in that along the circumferential direction uniformly cut four edges.
3. silicon chip polishing method according to claim 1, it is characterised in that the throwing cloth a diameter of 96cm, Cutting Length L
For 4-6cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611266972.0A CN106670944A (en) | 2016-12-31 | 2016-12-31 | Silicon wafer polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611266972.0A CN106670944A (en) | 2016-12-31 | 2016-12-31 | Silicon wafer polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106670944A true CN106670944A (en) | 2017-05-17 |
Family
ID=58848933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611266972.0A Pending CN106670944A (en) | 2016-12-31 | 2016-12-31 | Silicon wafer polishing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106670944A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6270392B1 (en) * | 1998-06-19 | 2001-08-07 | Nec Corporation | Polishing apparatus and method with constant polishing pressure |
| WO2002016079A1 (en) * | 2000-08-22 | 2002-02-28 | Nikon Corporation | Cmp device and production method for semiconductor device |
| WO2007021636A1 (en) * | 2005-08-11 | 2007-02-22 | 3M Innovative Properties Company | Flexible abrasive article and method of making |
| CN102626896A (en) * | 2012-04-24 | 2012-08-08 | 浙江金瑞泓科技股份有限公司 | Silicon chip polishing method for cutting polishing cloth of fixed plate edge |
| CN103052467A (en) * | 2010-08-02 | 2013-04-17 | Lg化学株式会社 | Large substrate, and polishing method of large substrate for uniform polishing |
| CN203665286U (en) * | 2013-12-06 | 2014-06-25 | 宏达光电玻璃(东莞)有限公司 | Polishing device for polishing machine |
| TWM509993U (en) * | 2014-10-13 | 2015-10-01 | Dongguan Fei Jin Electronics Technology Co Ltd | Wire piercing type connector |
-
2016
- 2016-12-31 CN CN201611266972.0A patent/CN106670944A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6270392B1 (en) * | 1998-06-19 | 2001-08-07 | Nec Corporation | Polishing apparatus and method with constant polishing pressure |
| WO2002016079A1 (en) * | 2000-08-22 | 2002-02-28 | Nikon Corporation | Cmp device and production method for semiconductor device |
| WO2007021636A1 (en) * | 2005-08-11 | 2007-02-22 | 3M Innovative Properties Company | Flexible abrasive article and method of making |
| CN103052467A (en) * | 2010-08-02 | 2013-04-17 | Lg化学株式会社 | Large substrate, and polishing method of large substrate for uniform polishing |
| CN102626896A (en) * | 2012-04-24 | 2012-08-08 | 浙江金瑞泓科技股份有限公司 | Silicon chip polishing method for cutting polishing cloth of fixed plate edge |
| CN203665286U (en) * | 2013-12-06 | 2014-06-25 | 宏达光电玻璃(东莞)有限公司 | Polishing device for polishing machine |
| TWM509993U (en) * | 2014-10-13 | 2015-10-01 | Dongguan Fei Jin Electronics Technology Co Ltd | Wire piercing type connector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No. 558, changta Road, Shihudang Town, Songjiang District, Shanghai, 201617 Applicant after: Shanghai crystal silicon material Co.,Ltd. Address before: 201616 No. 500, Guinan Road, Songjiang District, Shanghai Applicant before: Shanghai Wafer Works Corp. |