CN106653950B - Preparation method of gallium arsenide-silicon multi-junction efficient solar cell - Google Patents

Preparation method of gallium arsenide-silicon multi-junction efficient solar cell Download PDF

Info

Publication number
CN106653950B
CN106653950B CN201611254346.XA CN201611254346A CN106653950B CN 106653950 B CN106653950 B CN 106653950B CN 201611254346 A CN201611254346 A CN 201611254346A CN 106653950 B CN106653950 B CN 106653950B
Authority
CN
China
Prior art keywords
thickness
solar cell
gaas
doping concentration
solar cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201611254346.XA
Other languages
Chinese (zh)
Other versions
CN106653950A (en
Inventor
张无迪
高鹏
薛超
刘丽蕊
张清旭
姜明序
石璘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CETC 18 Research Institute
Original Assignee
CETC 18 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CETC 18 Research Institute filed Critical CETC 18 Research Institute
Priority to CN201611254346.XA priority Critical patent/CN106653950B/en
Publication of CN106653950A publication Critical patent/CN106653950A/en
Application granted granted Critical
Publication of CN106653950B publication Critical patent/CN106653950B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a preparation method of a gallium arsenide-silicon multi-junction efficient solar cell; the method is characterized in that: at least comprises the following steps: step 101, preparing a Si solar cell by adopting a diffusion or ion implantation mode; 102, preparing a GaAs solar cell; 103, respectively preparing metal grid line electrodes with the same size on the Si solar cell and the GaAs solar cell as contact electrodes; 104, using transparent epoxy resin to align and bond the Si solar cell and the GaAs solar cell according to a contact electrode pattern; 105, corroding the AlAs sacrificial layer by using HF acid by adopting a substrate stripping multiplexing technology to obtain a GaInP/InGaAs/Si 3 junction laminated solar cell and a multiplexed GaAs substrate; step 106, manufacturing upper and lower electrodes of the battery; and step 107, preparing the battery antireflection film.

Description

A kind of GaAs-silicon ties the preparation method of efficient solar battery more
Technical field
The present invention relates to technical field of solar cells, and efficient solar battery is tied more particularly to a kind of GaAs-silicon more Preparation method.
Background technology
Global energy crisis and environmental degradation is just threaten the long-term stability development of the mankind, energy and environment problem at Two big main problems of 21 century facing mankind.Solar energy power generating is to solve the problems, such as energy and environment, realizes mankind society The effective way of meeting sustainable development.Predict that, to the year two thousand thirty, regenerative resource is in total energy according to European Photovoltaic Industry Association (EPIA) To account for 30% or more in source structure, and accounting of the solar energy power generating in the supply of world's total electricity be also up to 10% with On.However, being compared with conventional Power Generation Mode, the cost of solar cell photovoltaic generation is still very high, and which limits solar energy The large-scale application of photovoltaic generation.
The solar cell technology of Si materials is presently the most ripe Commercial photovoltaic generation technology.Its main feature is that cost is opposite It is relatively low, but photoelectric conversion efficiency is not highest in various solar cell technologies.Polycrystalline silicon solar cell batch production efficiency exists 14%~16% or so, single crystal silicon solar cell batch production efficiency is 17~19% or so.And silicon solar cell photoelectric conversion efficiency Theoretical limit be 25%, therefore silicon solar cell batch production efficiency is difficult to be improved again.
GaAs (GaAs) solar cell is current opto-electronic conversion effect as typical III-V compounds of group solar cell The highest solar cell material system of rate, III-V compounds of group photoelectric conversion efficiency of the solar battery more tied is up to 32% or more. But it has the shortcomings that cost is excessively high, is only applied to solar cell for space use and concentrator solar cell at present.
Invention content
The technical problem to be solved by the present invention is to：The preparation method that a kind of GaAs-silicon ties efficient solar battery more is provided, GaAs-the silicon tie more the preparation method of efficient solar battery with alignment bonding techniques and substrate desquamation multiplexing technology by silicon too Positive electricity pond with gallium arsenide solar cell is heterogeneous integrates, have both silicon solar cell cost advantage and gallium arsenide solar cell light Photoelectric transformation efficiency advantage can further decrease solar energy power generating cost.
The present invention is adopted the technical scheme that solve technical problem present in known technology：
A kind of GaAs-silicon ties the preparation method of efficient solar battery more, includes at least following steps：
Step 101 prepares Si solar cells by the way of diffusion or ion implanting；
Step 102 prepares GaAs solar cells；
Step 103, the metal grid lines electrode for preparing identical size respectively on Si solar cells and GaAs solar cells are made To contact electrode；
Step 104, using transparent epoxy resin by Si solar cells and GaAs solar cells according to contact electrode pattern pair Quasi- bonding；
Step 105, using substrate desquamation multiplexing technology, AlAs sacrifice layer corrosions are fallen using HF acid, obtain GaInP/ The GaAs substrates of InGaAs/Si 3 knot stacked solar cell, cascade solar cell and multiplexing；
Step 106 makes battery upper/lower electrode；
Step 107 prepares battery antireflective film.
Further：The step 101 is specially：
Step 1011, the Si substrates adulterated using p-type, thickness are 150 μm~500 μm, and doping concentration is 1 × 1015~1 × 1018cm-3；
Step 1012 is surface-treated using standard RCA solution silicon chips, removal surface impurity pollution；
Step 1013 prepares Si batteries, the Si batteries PN junction depth by the way of diffusion or ion implanting It is 0.3~0.8 μm；The energy gap of the Si batteries is 1.12eV.
Further：The step 102 is specially：
Step 1021, the GaAs substrates adulterated using N-shaped, thickness are 200-600 μm, and doping concentration is 1 × 1017~1 × 1018cm-3；
Step 1022, epitaxial growth InGaAs buffer layers；
Step 1023, epitaxial growth AlAs sacrificial layers, the thickness range of wherein AlAs sacrificial layers is 100~300nm；
Step 1024, epitaxial growth cap layer：Doping concentration is 1 × 1018~1 × 1019cm-3The heavily doped layers of N-shaped GaAs, Thickness is 100~200nm；
Step 1025, the sub- batteries of reversed epitaxial growth the first knot GaInP；
Doping concentration is 1 × 1017~1 × 1018cm-3N-shaped AlInP Window layers, thickness be 50~400nm；
Doping concentration is 1 × 1017~1 × 1019cm-3N-shaped GaaIn1-aP emitter region, thickness are 100~500nm, wherein 0.3≤a≤0.8；
Doping concentration is 1 × 1016~1 × 1018cm-3P-type GabIn1-bThe base areas P, thickness are 1000~5000nm, wherein 0.3≤b≤0.8；
Doping concentration is 1 × 1017~1 × 1018cm-3P-type AlGaInP back surface fields, thickness be 50~400nm；
Step 1026, epitaxial growth tunnel junctions：Growth doping concentration is 1 × 10 successively17~1 × 1018cm-3P-type GacIn1-cP layers and N-shaped GadIn1-dP layers, wherein 0.3≤c≤0.6,0.3≤d≤0.6, thickness are 50~150nm.
Step 1027, the sub- batteries of reversed epitaxial growth the first knot InGaAs：
Doping concentration is 1 × 1017~1 × 1018cm-3N-shaped GaInP Window layers, thickness be 50~400nm；
Doping concentration is 1 × 1017~1 × 1019cm-3N-shaped IneGa1-eAs emitter region, thickness are 100~500nm, In 0.3≤e≤0.8；
Doping concentration is 1 × 1016~1 × 1018cm-3P-type InfGa1-fThe base areas As, thickness are 1000~5000nm, In 0.3≤f≤0.8；
Doping concentration is 1 × 1017~1 × 1018cm-3P-type AlGaAs back surface fields, thickness be 50~400nm.
Further：The step 103 is specially：
The Si solar cells are unijunction Si solar cells, and the GaAs solar cells are the binode GaInP/InGaAs sun Battery is prepared with binode GaInP/InGaAs solar battery surfaces using electron beam evaporation method in unijunction Si solar cells identical Ti gate line electrodes, Ag gate line electrodes, the Au gate line electrodes of size, which are used as, contacts electrode, and the thickness range of wherein Ti gate line electrodes is 0.5~2 μm, the thickness range of Ag gate line electrodes is 3~10 μm, and the thickness range of Au gate line electrodes is 0.1~0.5 μm；Grid line Width is 10~20 μm, and adjacent gate line electrode spacing range is 700~1200 μm.
Further：The step 104 is specially：
Using bonding line-up jig, Si solar cells and GaAs solar cell grid lines are contacted into electrode alignment, and by saturating Bright epoxy resin is bonded, wherein ranging from 150~300 DEG C of bonding temperature, bonding pressure ranging from 0.3~0.8Mpa.
Further：The step 105 is specially：
Using substrate desquamation multiplexing technology, AlAs sacrifice layer corrosions are fallen using HF acid, obtain GaInP/InGaAs/Si 3 The GaAs substrates of stacked solar cell, cascade solar cell and multiplexing are tied, wherein HF acid concentration ranges are 10%~25%, corrosion temperature ranging from 40 ~60 DEG C.
Further：The step 106 is specially：Battery upper/lower electrode is prepared by electron beam evaporation.
According to claim 1, GaAs-silicon ties the preparation method of efficient solar battery more, it is characterised in that：It is described Step 107 is specially：The double layer antireflection coating of aluminium oxide, titanium oxide is deposited in battery surface, wherein aluminium oxide thickness range is 20~70nm, oxidation titanium aluminum oxide thickness range is 20~70nm.
The invention has the advantages and positive effects that：
By using above-mentioned technical proposal：
1, the present invention is integrated silicon solar cell and gallium arsenide solar cell are heterogeneous.Prepare GaInP (1.88eV)/InGaAs (1.41eV)/3 knot stacked solar cell, cascade solar cells of Si (1.12eV).Compare the single band gap material of silicon solar cell The different semi-conducting material of a variety of band gap widths is constituted multijunction solar cell by material, goes to absorb and its band with each knot battery Gap width solar spectrum wave band the most matched maximumlly efficiently uses solar spectrum to realize, is promoted to greatest extent The photoelectric conversion efficiency of solar cell.
2, the present invention is using alignment bonding techniques, by silicon solar cell and GaAs sun electricity with metal grid lines figure Pond integrates, and the filling of other gaps is with transparent epoxy resin, the electrically conducting transparent connection of two kinds of batteries of realization between battery.It compares In III-V compound material of epitaxial growth directly on Si materials, by the heterogeneous integrated of bonding techniques, do not have to consider Si materials The lattice mismatch issue of material and III-V compound material substantially reduces technology difficulty, saves cost.
3, the present invention uses substrate desquamation multiplexing technology, after completing silicon solar cell and being bonded with gallium arsenide solar cell, Epitaxial growth gallium arsenide solar cell GaAs substrates can be completely stripped, it can be used to repeat epitaxial growth after respective handling Gallium arsenide solar cell film reaches substrate multiplexing purpose, further reduces the cost.
Description of the drawings
Fig. 1 is the structure chart of the preferred embodiment of the present invention.
Wherein：1, antireflective coating；2, the sub- batteries of GaInP；3, tunnel knot；4, the sub- batteries of InGaAs；5, electrode is contacted；6, thoroughly Bright epoxy resin；7, Si batteries.
Specific implementation mode
In order to further understand the content, features and effects of the present invention, the following examples are hereby given, and coordinate attached drawing Detailed description are as follows：
Referring to Fig. 1, a kind of GaAs-silicon ties the preparation method of efficient solar battery more, including：
1, prepared by unijunction Si (1.12eV) solar cell：
A, the Si substrates adulterated using p-type, thickness are 150-500 μm, and doping concentration is 1 × 1015~1 × 1018cm-3。
B, it is surface-treated using standard RCA solution silicon chips, removal surface impurity pollution；
C, Si batteries 7 are prepared by the way of diffusion or ion implanting, Si battery 7PN junction depths are 0.3~0.8 μm；The energy gap of the Si batteries is 1.12eV；
2, (solar cell includes the sub- batteries of GaInP 2 to binode GaInP (1.88eV)/InGaAs (1.41eV) solar cell With the sub- battery two parts of InGaAs) it prepares：
A, the GaAs substrates adulterated using N-shaped, thickness are 200-600 μm, and doping concentration is 1 × 1017~1 × 1018cm-3。
B, epitaxial growth InGaAs buffer layers.
C, epitaxial growth AlAs sacrificial layers, wherein 100~300nm of AlAs layer thickness,
D, epitaxial growth cap layer：Doping concentration is 1 × 1018~1 × 1019cm-3The heavily doped layers of N-shaped GaAs, thickness is 100~200nm.
E, the sub- batteries of the first knot of reversed epitaxial growth GaInP：Doping concentration is 1 × 1017~1 × 1018cm-3N-shaped AlInP Window layers, thickness are 50~400nm；Doping concentration is 1 × 1017~1 × 1019cm-3N-shaped GaxIn1-xP emitter region, Thickness is 100~500nm, wherein 0.3≤x≤0.8；Doping concentration is 1 × 1016~1 × 1018cm-3P-type GaxIn1-xP bases Area, thickness is 1000~5000nm, wherein 0.3≤x≤0.8；Doping concentration is 1 × 1017~1 × 1018cm-3P-type AlGaInP back surface fields, thickness are 50~400nm.
F, epitaxial growth tunnel junctions：Growth doping concentration is 1 × 10 successively17~1 × 1018cm-3P-type GaxIn1-xP layers With N-shaped GaxIn1-xP layers, wherein 0.3≤x≤0.6, thickness is 50~150nm.
G, the sub- batteries of the first knot of reversed epitaxial growth InGaAs：Doping concentration is 1 × 1017~1 × 1018cm-3N-shaped GaInP Window layers, thickness are 50~400nm；Doping concentration is 1 × 1017~1 × 1019cm-3N-shaped InxGa1-xAs emitter region, Thickness is 100~500nm, wherein 0.3≤x≤0.8；Doping concentration is 1 × 1016~1 × 1018cm-3P-type InxGa1-xAs bases Area, thickness is 1000~5000nm, wherein 0.3≤x≤0.8；Doping concentration is 1 × 1017~1 × 1018cm-3P-type AlGaAs Back surface field, thickness are 50~400nm.
3, using electron beam evaporation method in unijunction Si solar cells and binode GaInP/InGaAs solar battery surface systems The Ti/Ag/Au gate line electrodes of standby identical size are 0.5~2 μm as contact electrode 5, wherein Ti thickness, and Ag thickness is 3~10 μ M, Au thickness are 0.1~0.5 μm.Grid line width is 10~20 μm, and grating spacing is 700~1200 μm.
4, using bonding line-up jig, Si solar cells and GaAs solar cell grid lines are contacted into electrode alignment, and pass through Transparent epoxy resin 6 is bonded, and wherein bonding temperature is 150~300 DEG C, and bonding pressure is 0.3~0.8Mpa.
5, using substrate desquamation multiplexing technology, AlAs sacrifice layer corrosions is fallen using HF acid, obtain GaInP/InGaAs/ Si3 ties the GaAs substrates of stacked solar cell, cascade solar cell and multiplexing, and wherein HF acid concentrations are 10%~25%, and corrosion temperature is 40~60 ℃。
6, battery device structure is made：Battery upper/lower electrode is prepared by electron beam evaporation.
7, battery antireflective film 1 is prepared：The double layer antireflection coating of aluminium oxide, titanium oxide, wherein oxygen is deposited in battery surface Change aluminium 20~70nm of thickness, 20~70nm of oxidation titanium aluminum oxide thickness.
Tunnel junctions 3 are located between the sub- batteries 2 of GaInP and the sub- batteries of InGaAs 4.
The embodiments of the present invention have been described in detail above, but content is only the preferred embodiment of the present invention, It should not be construed as limiting the practical range of the present invention.Any changes and modifications in accordance with the scope of the present application, It should all still fall within the scope of the patent of the present invention.

Claims (1)

1. a kind of GaAs-silicon ties the preparation method of efficient solar battery more, it is characterised in that：Including at least following steps：
Step 101 prepares Si solar cells by the way of diffusion or ion implanting；
The step 101 is specially：
Step 1011, the Si substrates adulterated using p-type, thickness are 150 μm~500 μm, and doping concentration is 1 × 1015~1 × 1018cm-3；
Step 1012 is surface-treated using standard RCA solution silicon chips, removal surface impurity pollution；
Step 1013 prepares Si batteries by the way of diffusion or ion implanting, and the Si batteries PN junction depth is 0.3 ~0.8 μm；The energy gap of the Si batteries is 1.12eV；
Step 102 prepares GaAs solar cells；
The step 102 is specially：
Step 1021, the GaAs substrates adulterated using N-shaped, thickness are 200-600 μm, and doping concentration is 1 × 1017~1 × 1018cm-3；
Step 1022, epitaxial growth InGaAs buffer layers；
Step 1023, epitaxial growth AlAs sacrificial layers, the thickness range of wherein AlAs sacrificial layers is 100~300nm；
Step 1024, epitaxial growth cap layer：Doping concentration is 1 × 1018~1 × 1019cm-3The heavily doped layers of N-shaped GaAs, thickness For 100~200nm；
Step 1025, the sub- batteries of reversed epitaxial growth the first knot GaInP；
Doping concentration is 1 × 1017~1 × 1018cm-3N-shaped AlInP Window layers, thickness be 50~400nm；
Doping concentration is 1 × 1017~1 × 1019cm-3N-shaped GaaIn1-aP emitter region, thickness are 100~500nm, wherein 0.3≤ a≤0.8；
Doping concentration is 1 × 1016~1 × 1018cm-3P-type GabIn1-bThe base areas P, thickness are 1000~5000nm, wherein 0.3≤ b≤0.8；
Doping concentration is 1 × 1017~1 × 1018cm-3P-type AlGaInP back surface fields, thickness be 50~400nm；
Step 1026, epitaxial growth tunnel junctions：Growth doping concentration is 1 × 10 successively17~1 × 1018cm-3P-type GacIn1-cP Layer and N-shaped GadIn1-dP layers, wherein 0.3≤c≤0.6,0.3≤d≤0.6, thickness are 50~150nm；
Step 1027, the sub- batteries of reversed epitaxial growth the first knot InGaAs：
Doping concentration is 1 × 1017~1 × 1018cm-3N-shaped GaInP Window layers, thickness be 50~400nm；
Doping concentration is 1 × 1017~1 × 1019cm-3N-shaped IneGa1-eAs emitter region, thickness is 100~500nm, wherein 0.3 ≤e≤0.8；
Doping concentration is 1 × 1016~1 × 1018cm-3P-type InfGa1-fThe base areas As, thickness is 1000~5000nm, wherein 0.3 ≤f≤0.8；
Doping concentration is 1 × 1017~1 × 1018cm-3P-type AlGaAs back surface fields, thickness be 50~400nm；
Step 103 connects in Si solar cells with the metal grid lines electrode conduct for preparing identical size on GaAs solar cells respectively Touched electrode；
The step 103 is specially：
The Si solar cells are unijunction Si solar cells, and the GaAs solar cells are binode GaInP/InGaAs sun electricity Pond prepares identical ruler in unijunction Si solar cells using electron beam evaporation method with binode GaInP/InGaAs solar battery surfaces As contact electrode, the thickness range of wherein Ti gate line electrodes is for very little Ti gate line electrodes, Ag gate line electrodes, Au gate line electrodes 0.5~2 μm, the thickness range of Ag gate line electrodes is 3~10 μm, and the thickness range of Au gate line electrodes is 0.1~0.5 μm；Grid line Width is 10~20 μm, and adjacent gate line electrode spacing range is 700~1200 μm；
Step 104, using transparent epoxy resin by Si solar cells and GaAs solar cells according to contact electrode pattern alignment keys It closes；
The step 104 is specially：
Using bonding line-up jig, Si solar cells and GaAs solar cell grid lines are contacted into electrode alignment, and pass through transparent ring Oxygen resin is bonded, wherein ranging from 150~300 DEG C of bonding temperature, bonding pressure ranging from 0.3~0.8Mpa；
Step 105, using substrate desquamation multiplexing technology, AlAs sacrifice layer corrosions are fallen using HF acid, obtain GaInP/InGaAs/ The GaAs substrates of Si 3 knot stacked solar cell, cascade solar cell and multiplexing；
The step 105 is specially：
Using substrate desquamation multiplexing technology, AlAs sacrifice layer corrosions are fallen using HF acid, it is folded to obtain 3 knots of GaInP/InGaAs/Si The GaAs substrates of layer solar cell and multiplexing, wherein HF acid concentration ranges are 10%~25%, corrosion temperature ranging from 40~60 ℃；
Step 106 makes battery upper/lower electrode；
The step 106 is specially：Battery upper/lower electrode is prepared by electron beam evaporation
Step 107 prepares battery antireflective film,
The step 107 is specially：The double layer antireflection coating of aluminium oxide, titanium oxide is deposited in battery surface, wherein aluminium oxide is thick It is 20~70nm to spend range, and oxidation titanium aluminum oxide thickness range is 20~70nm.
CN201611254346.XA 2016-12-30 2016-12-30 Preparation method of gallium arsenide-silicon multi-junction efficient solar cell Active CN106653950B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611254346.XA CN106653950B (en) 2016-12-30 2016-12-30 Preparation method of gallium arsenide-silicon multi-junction efficient solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611254346.XA CN106653950B (en) 2016-12-30 2016-12-30 Preparation method of gallium arsenide-silicon multi-junction efficient solar cell

Publications (2)

Publication Number Publication Date
CN106653950A CN106653950A (en) 2017-05-10
CN106653950B true CN106653950B (en) 2018-11-06

Family

ID=58835556

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611254346.XA Active CN106653950B (en) 2016-12-30 2016-12-30 Preparation method of gallium arsenide-silicon multi-junction efficient solar cell

Country Status (1)

Country Link
CN (1) CN106653950B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107123697A (en) * 2017-06-12 2017-09-01 广东爱康太阳能科技有限公司 A kind of silica-based high-efficiency solar cell
CN107195712A (en) * 2017-06-12 2017-09-22 广东爱康太阳能科技有限公司 A kind of silicon class binode lamination solar cell
CN108054231A (en) * 2018-01-29 2018-05-18 扬州乾照光电有限公司 A kind of four-junction solar battery and production method based on Si substrates
CN111199962A (en) * 2018-11-16 2020-05-26 东泰高科装备科技有限公司 Solar cell and preparation method thereof
CN112349796A (en) * 2019-08-06 2021-02-09 东泰高科装备科技有限公司 Gallium arsenide battery and preparation method thereof
CN110911510B (en) * 2019-11-20 2021-02-26 电子科技大学中山学院 Silicon-based nitride five-junction solar cell containing superlattice structure
CN113921655A (en) * 2021-09-29 2022-01-11 中国电子科技集团公司第十八研究所 Silicon-based gallium arsenide solar cell and preparation method thereof
CN114300564B (en) * 2021-12-28 2024-04-05 武汉锐科光纤激光技术股份有限公司 Double-sided solar cell and manufacturing method thereof
CN115172501B (en) * 2022-07-21 2023-05-30 中山德华芯片技术有限公司 Multi-junction solar cell for voltage matching space and preparation method and application thereof
CN115863466B (en) * 2023-03-02 2023-05-23 南昌凯迅光电股份有限公司 Gallium arsenide solar cell chip and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593229A (en) * 2011-01-11 2012-07-18 朱忻 Multi-junction solar cell and manufacturing method thereof
CN104733556A (en) * 2015-03-30 2015-06-24 扬州乾照光电有限公司 Three-node GaAs solar cell with surface roughening structure and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593229A (en) * 2011-01-11 2012-07-18 朱忻 Multi-junction solar cell and manufacturing method thereof
CN104733556A (en) * 2015-03-30 2015-06-24 扬州乾照光电有限公司 Three-node GaAs solar cell with surface roughening structure and preparation method thereof

Also Published As

Publication number Publication date
CN106653950A (en) 2017-05-10

Similar Documents

Publication Publication Date Title
CN106653950B (en) Preparation method of gallium arsenide-silicon multi-junction efficient solar cell
Djebbour et al. Bandgap engineered smart three‐terminal solar cell: New perspectives towards very high efficiencies in the silicon world
CN101901854A (en) Method for preparing InGaP/GaAs/InGaAs three-junction thin film solar cell
CN108231934A (en) A kind of solar cell module and preparation method thereof
CN102969387B (en) GaInP/GaAs/InGaAs three-joint solar cell epitaxial structure
CN101431117A (en) Multi-junction solar cell with doping blocking layer
CN102790117B (en) GaInP/GaAs/InGaNAs/Ge four-junction solar cell and preparation method thereof
CN103000740B (en) GaAs/GaInP double-junction solar battery and preparation method thereof
CN110911510B (en) Silicon-based nitride five-junction solar cell containing superlattice structure
CN102738292B (en) Many knots laminated cell and preparation method thereof
CN106571408B (en) five-junction solar cell and preparation method thereof
TW201140875A (en) A semiconductor epitaxial structure and apparatus comprising the same
CN110931593A (en) Lattice-matched silicon-based arsenic-free compound four-junction solar cell
CN103545389A (en) Multi-junction light-gathering gallium arsenide solar cell and preparation method thereof
CN203536449U (en) Multi-junction light-gathering gallium arsenide solar cell
JP2022509963A (en) Aluminum-arsenic and indium-phosphide based heterojunction photovoltaic cells, related multijunction cells, and related methods
CN102790119A (en) GaInP/GaAs/Ge/Ge four-junction solar cell and preparation method thereof
CN111430493B (en) Multi-junction solar cell and power supply equipment
JP2014220350A (en) Multijunction solar cell and manufacturing method therefor
CN103579388B (en) A kind of solar cell containing double aluminum back surface fields
Plakhotnyuk Nanostructured Heterojunction Crystalline Silicon Solar Cells with Transition Metal Oxide Carrier Selective Contacts
CN105938856A (en) Si-substrate GaAs single-junction solar cell structure and manufacturing method thereof
CN106298983A (en) A kind of based on Si/NiOxthe crystal-silicon solar cell of hetero-junctions
CN102569492B (en) Doping method for solar energy wafer and doped wafer
CN104241432A (en) Three-junction solar cell with optimized band gap structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant