CN107123697A - A kind of silica-based high-efficiency solar cell - Google Patents
A kind of silica-based high-efficiency solar cell Download PDFInfo
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- CN107123697A CN107123697A CN201710439210.4A CN201710439210A CN107123697A CN 107123697 A CN107123697 A CN 107123697A CN 201710439210 A CN201710439210 A CN 201710439210A CN 107123697 A CN107123697 A CN 107123697A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 230000012010 growth Effects 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 239000010931 gold Substances 0.000 description 8
- 239000005038 ethylene vinyl acetate Substances 0.000 description 5
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- -1 aluminium indium phosphorus Chemical compound 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Abstract
The present invention discloses a kind of silica-based high-efficiency solar cell, belongs to technical field of solar batteries, including monocrystalline silicon p-type battery, bonded layer and GaInP hull cells, the GaInP hull cells are bonded to the front of monocrystalline silicon p-type battery by bonded layer；Using GaAs or Ge as support substrate, by MOCVD or MBE growths and the GaInP hull cells of GaAs Lattice Matchings, it is bonded on monocrystalline silicon p-type battery, peels off the GaInP hull cells of growth, produce the silica-based high-efficiency solar cell.The present invention can realize the series connection of multi-layer cell by dot matrix bonding techniques and tunnel knot technology, so as to lift the conversion efficiency of whole laminated cell by lifting battery open circuit voltage；And the mechanical performance of battery is greatly improved as the support substrate of silicon based cells using Si.
Description
Technical field
The present invention relates to a kind of silica-based high-efficiency solar cell, belong to technical field of solar batteries.
Background technology
Crystal silicon solar energy battery is because of cheap cost, ripe manufacturing process, and following ten or twenty year is still solar-electricity
The main product in pond.Due to band gap reason, crystal silicon solar battery can only less than 1.1 μm sunshines of absorbing wavelength, most of long wave
Long light can be all wasted.
Current conventional single-crystal silicon battery volume production efficiency is universal in 20%-21% or so, the highest conversion efficiency of battery by
Restriction.But for laminated cell, grading absorption sunshine can sufficiently utilize sunshine.Laminated cell can be regarded as
The battery being cascaded, open-circuit voltage can be obviously improved, and short circuit current flow is less than or equal to the minimum of laminated cell neutron battery
Electric current.Laminated cell lifts the conversion efficiency of solar cell by lifting the open-circuit voltage of battery.
The content of the invention
In view of the above-mentioned problems of the prior art, the present invention provides a kind of silica-based high-efficiency solar cell, it can carry significantly
Rise the conversion efficiency of silica-based solar cell.
To achieve these goals, a kind of silica-based high-efficiency solar cell that the present invention is used, including monocrystalline silicon p-type electricity
Pond, bonded layer and GaInP hull cells, the GaInP hull cells are being bonded to monocrystalline silicon p-type battery just by bonded layer
Face；
Using GaAs or Ge as support substrate, pass through MOCVD or MBE growths and the GaInP films of GaAs Lattice Matchings
Battery, is bonded on monocrystalline silicon p-type battery, peels off the GaInP hull cells of growth, produces the silica-based high-efficiency solar-electricity
Pond.
As an improvement, the monocrystalline silicon p-type battery includes bottom electrode, Al-BSF, P-type layer, N+ layers and passivating film；
The bottom electrode is arranged in Al-BSF, and Al-BSF is located at the back side of P-type layer, and described N+ layers is being located at P-type layer just
Face, the passivating film is located at N+ layer surfaces.
As an improvement, the bonded layer is bonded using dot matrix Au/Au.
Further improve, be provided with the bonded layer in some circular or square interstices, the space and be filled with EVA.
As an improvement, the GaInP hull cells include tunnel knot, the sub- batteries of GaInP and Top electrode；
The tunnel knot is located between bonded layer and the sub- batteries of GaInP, and the Top electrode is located at the sub- battery upper tables of GaInP
Face；
The sub- batteries of GaInP include AlGaInP back surface fields, GaInP bases, GaInP launch sites and AlInP Window layers, institute
AlGaInP back surface fields, GaInP bases, GaInP launch sites and AlInP Window layers is stated to be sequentially arranged from bottom to up.
As an improvement, growing 300-500nm GaAs successively as support substrate using N-type GaAs substrates or Ge substrates and delaying
Rush layer, 10-15nm AlAs sacrifice layers, 300-500nm GaAs ohmic contact layers, 700-2500nm GaInP electricity
Pond and 10-30nm tunnel knot.
As an improvement, being used as support substrate using 325 μm of GaAs-N type substrates.
As an improvement, the GaAs ohmic contact layers use N-type GaAs ohmic contact layers, n-type doping element is Si, doping
Concentration is 5E18cm-3；
The thickness of the AlInP Window layers is 20-100nm, and n-type doping element is Si；
GaInP launch sites thickness is 50-350nm, and n-type doping element is Si.
As an improvement, GaInP bases thickness is 350-1500nm, p-type doped chemical is Zn；
The AlGaInP back surface fields thickness is 50-200nm, and p-type doped chemical is Zn.
As an improvement, the tunnel knot uses wide bandgap material, band gap range of choice is 1.45-2.0ev, and the selection of material is
GaInP or AlGaAs, n-type doping is co-doped with for Si/Te, concentration 2E19cm-3, p-type be doped to C doping, concentration 1E20cm-3。
Compared with prior art, the present invention has the advantages that：
1) conventional crystal silicon battery can only absorbing wavelength be less than 1.1 μm of light, the light of most of long wavelength is wasted, so as to turn
Change less efficient, and the series connection of multi-layer cell can be realized by dot matrix bonding techniques and tunnel knot technology, so as to pass through lifting
Battery open circuit voltage lifts the conversion efficiency of whole laminated cell；And carried significantly as the support substrate of silicon based cells using Si
The mechanical performance of battery is risen.
2) then the present invention gets off substrate desquamation by the way that laminated cell is bonded into monocrystalline silicon p-type battery front side,
The sub- battery absorbing wavelength scopes of GaInP are the light less than 680nm, and the sub- battery of monocrystalline silicon absorbs 680nm-1100nm light, both
Cooperation effectively realizes making full use of for solar spectrum.
3) the sub- battery of monocrystalline silicon and the sub- batteries of GaInP are cascaded (if without tunnel knot battery by tunnel knot
Between can form inversion layer)；Sub- battery is bonded together by dot matrix bonded layer, and (dot matrix bonding is primarily due to golden gold bonding layer
It is light tight, influence the absorption of silicon cell light), realize silica-based high-efficiency solar cell.
4) solar cell of the invention realizes the grading absorption of sunshine, can effectively lift silica-based solar electricity
Pond photoelectric transformation efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of solar cell of the present invention；
Fig. 2 is a kind of structural representation for being bonded layer pattern in the present invention；
Fig. 3 is another structural representation for being bonded layer pattern in the present invention；
Fig. 4 is the structural representation of stacked thin film batteries part of the present invention (not including Top electrode)；
In figure：1st, bottom electrode, 2, Al-BSF, 3, P-type layer, 4, N+ layers, 5, passivating film, 6, bonded layer, 7, EVA, 8, tunnel
Knot, 9, AlGaInP back surface fields, 10, GaInP bases, 11, GaInP launch sites, 12, AlInP Window layers, 13, Top electrode, 14, GaAs
Ohmic contact layer, 15, AlAs sacrifice layers, 16, GaAs cushions, 17, GaAs substrates.
Embodiment
It is right below by accompanying drawing and embodiment to make the object, technical solutions and advantages of the present invention of greater clarity
The present invention is further elaborated.However, it should be understood that specific embodiment described herein is only to explain this hair
Scope that is bright, being not intended to limit the invention.
Unless otherwise defined, all technical terms and scientific terminology used herein are led with belonging to the technology of the present invention
The implication that the technical staff in domain is generally understood that is identical, and used term is intended merely to retouch in the description of the invention herein
State the purpose of specific embodiment, it is not intended that in the limitation present invention.
As Figure 1 and Figure 4, a kind of silica-based high-efficiency solar cell, including monocrystalline silicon p-type battery, bonded layer 6 and GaInP
Hull cell, the GaInP hull cells are bonded to the front of monocrystalline silicon p-type battery by bonded layer 6, and bonding can be very good
Hull cell and monocrystalline silicon p-type battery are bonded together, electric current transmitting effect can also be played；
Using GaAs or Ge as support substrate, pass through MOCVD or MBE growths and the GaInP films of GaAs Lattice Matchings
Battery, is bonded on monocrystalline silicon p-type battery, peels off the GaInP hull cells of growth, produces the silica-based high-efficiency solar-electricity
Pond.
As the improvement of embodiment, the monocrystalline silicon p-type battery includes bottom electrode 1, Al-BSF 2, P-type layer 3, the and of N+ layers 4
Passivating film 5；
The bottom electrode 1 is arranged in Al-BSF 2, and Al-BSF 2 is located at the back side of P-type layer 3, and the N+ layers 4 are located at P-type layer
3 front, the passivating film 5 is located at the surface of N+ layers 4.
As the improvement of embodiment, the bonded layer 6 is using dot matrix Au/Au bondings.
Further, as shown in Figure 2 and Figure 3, it is provided with the bonded layer 6 in some circular or square interstices, the space
Filled with EVA 7.The bonded layer 6 can have many selection combinations, and Au/Au bondings are optimal bonding patterns.Bonded layer 6 is needed
Solve two problems：The p-type Ohmic contact problem of hull cell and the p-type Ohmic contact problem of monocrystalline silicon battery, good leads
Electric energy power；Also to ensure good translucency.Au has good electrology characteristic, but light tight, and bonded layer 6 needs spy here
Different processing, transmits its light, is absorbed for monocrystalline silicon, it is contemplated that the stability of bonding, and bonding adds EVA between lamellar spacing
(ethylene-vinyl acetate copolymer) material, it is ensured that the stability of film.In addition, the figure and film of the passivating film 5 of silk-screen printing
The figure of bonding aspect is consistent.
As the improvement of embodiment, the GaInP hull cells include tunnel knot 8, the sub- batteries of GaInP and Top electrode 13,
Tunnel knot 8 can realize the transmission of electric current between monocrystalline silicon and hull cell；
The tunnel knot 8 is located between bonded layer 6 and the sub- batteries of GaInP, and Top electrode 13 is located at the sub- battery upper tables of GaInP
Face；
The sub- batteries of GaInP include AlGaInP back surface fields 9, GaInP bases 10, GaInP launch sites 11 and AlInP windows
Layer 12, the AlGaInP back surface fields 9, GaInP bases 10, GaInP launch sites 11 and AlInP Window layers 12 cloth successively from bottom to up
Put.
As the improvement of embodiment, using N-type GaAs substrates 17 or Ge substrates as support substrate, because Ge-N type substrates
There is reverse farmland (Ge is diamond lattic structure, and GaAs and GaInP are zincblende lattce structure) in growth GaAs or GaInP materials,
It is preferred to use 325 μm of GaAs-N type substrates as support substrate；
Grow 300-500nm GaAs cushions 16,10-15nm AlAs sacrifice layers 15,300- successively in support substrate
The sub- batteries of the GaInP and 10-30nm tunnel knot 8 of 500nm GaAs ohmic contact layers 14,700-2500nm.
Wherein, GaAs cushions 16 provide good interface for subsequent material growth, filter dislocation；AlAs sacrifice layers 15
Thickness is preferably 10nm, according to the selective corrosion of solution, can peel off film above；GaAs ohmic contact layers 14 use N
Type GaAs ohmic contact layers, thickness is preferably 360nm, because the doping of GaAs-N types is easy to be made high, therefore is typically chosen as Europe
Nurse contact layer, n-type doping element is Si, doping concentration 5E18cm-3。
The thickness of aluminium indium phosphorus (AlInP) Window layer is 20-100nm, and n-type doping element is Si, mainly reduces boundary
Face is combined；
The thickness of the GaInP launch sites 11 is 50-350nm, and n-type doping element is Si；
The thickness of the GaInP bases 10 is 350-1500nm, and p-type doped chemical is Zn；
The thickness of AlGaInP (AlGaInP) back surface field is 50-200nm, and p-type doped chemical is Zn.
As the further improvement of embodiment, the tunnel knot 8 uses wide bandgap material, and band gap range of choice is 1.45-
2.0ev, and need to consider lattice matching issues, material is preferably GaInP or aluminum gallium arsenide (AlGaAs), and n-type doping is common for Si/Te
Mix, concentration is 2E19cm-3, p-type be doped to C doping, concentration is 1E20cm-3。
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modification, equivalent substitution or improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. a kind of silica-based high-efficiency solar cell, it is characterised in that thin including monocrystalline silicon p-type battery, bonded layer (6) and GaInP
Film battery, the GaInP hull cells are bonded to the front of monocrystalline silicon p-type battery by bonded layer (6)；
Using GaAs or Ge as support substrate, by MOCVD or MBE growths and the GaInP hull cells of GaAs Lattice Matchings,
It is bonded on monocrystalline silicon p-type battery, peels off the GaInP hull cells of growth, produce the silica-based high-efficiency solar cell.
2. a kind of silica-based high-efficiency solar cell according to claim 1, it is characterised in that the monocrystalline silicon p-type battery
Including bottom electrode (1), Al-BSF (2), P-type layer (3), N+ layers (4) and passivating film (5)；
The bottom electrode (1) is arranged in Al-BSF (2), and Al-BSF (2) is located at the back side of P-type layer (3), described N+ layers (4) position
Front in P-type layer (3), the passivating film (5) is located at N+ layers of (4) surface.
3. a kind of silica-based high-efficiency solar cell according to claim 1 or 2, it is characterised in that the bonded layer (6) is adopted
It is bonded with dot matrix Au/Au.
4. a kind of silica-based high-efficiency solar cell according to claim 3, it is characterised in that opened on the bonded layer (6)
Have in some circular or square interstices, the space and be filled with EVA (7).
5. a kind of silica-based high-efficiency solar cell according to claim 1, it is characterised in that the GaInP hull cells
Including tunnel knot (8), the sub- batteries of GaInP and Top electrode (13)；
The tunnel knot (8) is located between bonded layer (6) and the sub- batteries of GaInP, and the Top electrode (13) is located at the sub- batteries of GaInP
Upper surface；
The sub- batteries of GaInP include AlGaInP back surface fields (9), GaInP bases (10), GaInP launch sites (11) and AlInP windows
Mouthful layer (12), the AlGaInP back surface fields (9), GaInP bases (10), GaInP launch sites (11) and AlInP Window layers (12) from
Under supreme be sequentially arranged.
6. a kind of silica-based high-efficiency solar cell according to claim 5, it is characterised in that use N-type GaAs substrates
(17) or Ge substrates are as support substrate, 300-500nm GaAs cushions (16), 10-15nm AlAs sacrifice layers are grown successively
(15), 300-500nm GaAs ohmic contact layers (14), the 700-2500nm batteries of the GaInP and 10-30nm tunnel
Tie (8).
7. a kind of silica-based high-efficiency solar cell according to claim 6, it is characterised in that using 325 μm of GaAs-N types
Substrate is used as support substrate.
8. a kind of silica-based high-efficiency solar cell according to claim 6 or 7, it is characterised in that described GaAs ohm connects
Contact layer (14) uses N-type GaAs ohmic contact layers, and n-type doping element is Si, and doping concentration is 5E18cm-3；
The thickness of the AlInP Window layers (12) is 20-100nm, and n-type doping element is Si；
GaInP launch sites (11) thickness is 50-350nm, and n-type doping element is Si.
9. a kind of silica-based high-efficiency solar cell according to claim 8, it is characterised in that the GaInP bases (10)
Thickness is 350-1500nm, and p-type doped chemical is Zn；
AlGaInP back surface fields (9) thickness is 50-200nm, and p-type doped chemical is Zn.
10. a kind of silica-based high-efficiency solar cell according to claim 5, it is characterised in that the tunnel knot (8) uses
Wide bandgap material, band gap range of choice is 1.45-2.0ev, and the selection of material is GaInP or AlGaAs, and n-type doping is common for Si/Te
Mix, concentration 2E19cm-3, p-type be doped to C doping, concentration 1E20cm-3。
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| CN115207143A (en) * | 2022-06-02 | 2022-10-18 | 西安电子科技大学 | perovskite/Si two-end mechanical laminated solar cell of MXene interconnection layer and preparation method thereof |
| CN115207143B (en) * | 2022-06-02 | 2023-10-31 | 西安电子科技大学 | perovskite/Si two-end mechanical laminated solar cell of MXene interconnection layer and preparation method thereof |
| CN115939263A (en) * | 2023-03-09 | 2023-04-07 | 浙江晶科能源有限公司 | Solar cell preparation method, solar cell and photovoltaic module |
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