CN113921655A - Silicon-based gallium arsenide solar cell and preparation method thereof - Google Patents
Silicon-based gallium arsenide solar cell and preparation method thereof Download PDFInfo
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- CN113921655A CN113921655A CN202111152281.9A CN202111152281A CN113921655A CN 113921655 A CN113921655 A CN 113921655A CN 202111152281 A CN202111152281 A CN 202111152281A CN 113921655 A CN113921655 A CN 113921655A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 99
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 96
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 79
- 239000010703 silicon Substances 0.000 title claims abstract description 79
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000001704 evaporation Methods 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims abstract description 7
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 5
- 238000005260 corrosion Methods 0.000 claims abstract description 4
- 230000007797 corrosion Effects 0.000 claims abstract description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 150000002902 organometallic compounds Chemical class 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a silicon-based gallium arsenide solar cell and a preparation method thereof, belonging to the technical field of solar cells and comprising the following steps: firstly, preparing a silicon solar cell; secondly, preparing a gallium arsenide solar cell; thirdly, evaporating and plating semitransparent metal electrodes on the silicon solar cell and the gallium arsenide solar cell; bonding the silicon solar cell and the gallium arsenide solar cell by using a metal bonding technology; corroding a sacrificial layer in the gallium arsenide solar cell by adopting a chemical corrosion method, and stripping a gallium arsenide substrate to obtain a silicon-based gallium arsenide laminated solar cell; sixthly, respectively manufacturing an upper electrode of the silicon-based gallium arsenide laminated solar cell on the surface of the upper gallium arsenide solar cell by using a PVD method, and manufacturing a lower electrode of the silicon-based gallium arsenide laminated solar cell on the back surface of the silicon solar cell; preparing a battery antireflection film on the upper surface of the silicon-based gallium arsenide laminated solar battery by using a PVD method; and eighthly, cutting to obtain the silicon-based gallium arsenide laminated solar cell with the required size.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a silicon-based gallium arsenide solar cell and a preparation method thereof.
Background
With the development of global economy in recent years, the demand for energy has been increasing in various countries. The energy consumption causes global climate change, and aggravates ecological environment problems of various countries. In order to solve the problem, various countries have been vigorously developing and utilizing sustainable energy sources, such as water energy, solar energy, wind energy, wave energy, geothermal energy, tidal energy, and the like, and also have studied technologies for improving the energy utilization efficiency.
Solar cells are capable of absorbing solar energy and converting it into electrical energy. Common solar cells can be classified into: silicon solar cells, gallium arsenide solar cells (GaAs), cadmium telluride solar cells (CdTe), copper indium gallium selenide solar Cells (CIGS), organic solar cells, and the like. The theoretical limit of the photoelectric conversion efficiency of the silicon solar cell is 25%, and the silicon solar cell is the most widely applied photovoltaic power generation technology due to the low price, and is used in the military field, the aerospace field, the industrial and agricultural field and the like. Gallium arsenide solar cells are typical III-V compound solar cells, and are solar cell material systems with the highest photoelectric conversion efficiency at present. The photoelectric conversion efficiency of the triple-junction gallium arsenide solar cell can reach more than 33%, but the triple-junction gallium arsenide solar cell is expensive, so that the triple-junction gallium arsenide solar cell is generally applied to a space solar cell at present and is rarely applied to a ground photovoltaic power station.
The wafer bonding technology is that two smooth and clean homogeneous or heterogeneous wafers are tightly combined through chemical and physical actions at high temperature and high pressure, atoms at the interface during combination react under the action of external force to form covalent bonds, so that the two wafers are integrated, and the combination interface has specific bonding strength. Since this technique can connect two lattice mismatched materials together, a silicon-based-gallium arsenide solar cell can be fabricated by combining a silicon solar cell with a gallium arsenide solar cell by wafer bonding.
Disclosure of Invention
The invention provides a silicon-based gallium arsenide solar cell and a preparation method thereof, aiming at solving the technical problems in the prior art, the silicon solar cell and the gallium arsenide solar cell are heterogeneously integrated by using a metal bonding technology, and the prepared cell has the advantages of silicon solar cell cost and gallium arsenide solar cell photoelectric conversion efficiency, and can further reduce the solar photovoltaic power generation cost while improving the efficiency.
The first purpose of the invention is to provide a preparation method of a silicon-based gallium arsenide solar cell, which sequentially comprises the following procedures:
s1, preparing a silicon solar cell;
s2, preparing a gallium arsenide solar cell;
s3, evaporating and plating a semitransparent metal electrode on the silicon solar cell and the gallium arsenide solar cell;
s4, bonding the silicon solar cell and the gallium arsenide solar cell together by using a metal bonding technology;
s5, corroding a sacrificial layer in the gallium arsenide solar cell by adopting a chemical corrosion method, and peeling off the gallium arsenide substrate to obtain the silicon-based gallium arsenide laminated solar cell;
s6, respectively manufacturing an upper electrode of the silicon-based gallium arsenide laminated solar cell on the surface of the upper gallium arsenide solar cell and a lower electrode of the silicon-based gallium arsenide laminated solar cell on the back surface of the silicon solar cell by using a PVD method;
s7, preparing a battery antireflection film on the upper surface of the silicon-based gallium arsenide laminated solar battery by using a PVD method;
and S8, cutting to obtain the silicon-based gallium arsenide laminated solar cell with the required size.
Preferably, S1 specifically includes: the following treatment is sequentially carried out on the silicon wafer: cleaning, preparing a suede, and diffusing to prepare a junction.
Preferably, S2 is specifically: on a gallium arsenide substrate, a gallium arsenide solar cell is prepared by utilizing metal organic compound chemical vapor deposition and epitaxial growth.
Preferably, S3 is specifically: and (3) respectively evaporating and plating semitransparent metal electrodes on the silicon solar cell and the gallium arsenide solar cell by utilizing a physical vapor deposition technology.
Preferably, in S8, the dicing technique is a mechanical or laser scribing process.
Preferably, the silicon solar cell is one of a single crystalline silicon solar cell, a polycrystalline silicon solar cell and an amorphous silicon solar cell.
Preferably, the gallium arsenide solar cell is a single junction gallium arsenide solar cell or a double junction gallium arsenide solar cell.
Preferably, in S3, the translucent metal electrode has a thickness in the range of 4-10 nm.
Preferably, in S4, the bonding temperature is 150 ℃ to 450 ℃, and the bonding pressure is 0.1 to 1 MPa.
The second purpose of the invention is to provide a silicon-based gallium arsenide solar cell, which is manufactured by the preparation method of the silicon-based gallium arsenide solar cell.
The invention has the advantages and positive effects that:
according to the invention, through selecting proper silicon materials and gallium arsenide materials, when sunlight passes through the silicon-based gallium arsenide laminated solar cell, light energy with different wavelengths is sequentially absorbed by the gallium arsenide solar cell and the silicon solar cell which are matched with the band gaps, so that the energy of different wave bands in a solar spectrum can be utilized to the maximum extent, and the conversion efficiency of the solar cell is improved.
The invention realizes the transparent conductive connection between the silicon solar cell with the semitransparent metal electrode and the gallium arsenide solar cell by the metal bonding technology. The silicon-based gallium arsenide laminated solar cell is prepared by a bonding technology, the problem of lattice mismatch in an epitaxial process is not needed to be considered, the process difficulty is low, and the cost is saved.
Drawings
FIG. 1 is a schematic structural diagram of a silicon-based gallium arsenide solar cell in a preferred embodiment of the present invention;
wherein: 1. an antireflection film; 2. an upper electrode; 3. a gallium arsenide solar cell; 4. a semi-transparent metal electrode; 5. a silicon solar cell; 6. and a lower electrode.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings:
the technical scheme of the invention is as follows:
a preparation method of a silicon-based gallium arsenide solar cell sequentially comprises the following steps:
the silicon solar cell 5 is prepared by the processes of cleaning, preparing a suede, diffusing and making a junction and the like on a silicon wafer;
the gallium arsenide substrate is used for preparing a gallium arsenide solar cell 3 after epitaxial growth by utilizing Metal Organic Chemical Vapor Deposition (MOCVD);
respectively evaporating and plating semitransparent metal electrodes 4 on the silicon solar cell and the gallium arsenide solar cell by Physical Vapor Deposition (PVD);
bonding the silicon solar cell and the gallium arsenide solar cell together by utilizing a metal bonding technology;
corroding a sacrificial layer in the gallium arsenide solar cell by adopting a chemical corrosion method, and stripping a gallium arsenide substrate to obtain a silicon-based gallium arsenide laminated solar cell;
respectively manufacturing an upper electrode 2 of a silicon-based gallium arsenide laminated solar cell on the surface of the upper gallium arsenide solar cell and manufacturing a lower electrode 6 of the silicon-based gallium arsenide laminated solar cell on the back surface of the silicon cell by using a PVD method;
preparing a battery antireflection film 1 on the upper surface of the silicon-based gallium arsenide laminated solar battery by using a PVD (physical vapor deposition) method;
and cutting by using a mechanical or laser scribing process to obtain the silicon-based gallium arsenide laminated solar cell with the required size.
The silicon solar cell may be a single crystalline silicon solar cell, a polycrystalline silicon solar cell, and an amorphous silicon solar cell. The gallium arsenide solar cell can be a single junction gallium arsenide solar cell and a double junction gallium arsenide solar cell. And respectively evaporating and plating semitransparent metal electrodes on the silicon solar cell and the gallium arsenide solar cell by using a PVD method, wherein the thickness of the semitransparent metal electrodes ranges from 4 nm to 10 nm. And aligning the silicon solar cell and the GaAs solar cell electrode layer by using a bonding clamp for metal bonding, wherein the bonding temperature range is 150-450 ℃, and the bonding pressure range is 0.1-1 Mpa.
As shown in fig. 1, the present invention provides a method for manufacturing a silicon-based gallium arsenide tandem solar cell, in this embodiment, the silicon solar cell is a single crystal silicon cell, and the gallium arsenide solar cell is a double junction gallium arsenide cell;
firstly, preparing a silicon battery, and treating the surface of a P-type doped Si substrate with the thickness of 150 mu m by adopting a standard RCA solution or a sulfuric acid hydrogen peroxide mixed solution to remove impurity pollution and a damaged layer;
preparing a silicon battery with the forbidden band width of 1.12eV by adopting a high-temperature diffusion or ion implantation method, wherein the depth of a pn junction is 0.5 mu m;
then preparing a double-junction gallium arsenide solar cell, wherein the cell is composed of two sub-cells of GaInP with the forbidden band width of 1.88eV and InGaAs with the forbidden band width of 1.41 eV;
an n-type doped GaAs substrate with a thickness of 200 μm and a doping concentration of 1 × 10 is used18cm-3；
Epitaxially growing InGaAs buffer layers on the sequential substrates by using an MOCVD technology; an AlAs sacrificial layer with the thickness of 200 nm; a 150nm thick heavily doped n-type GaAs layer with a doping concentration of 1 × 1018cm-3；
The structure of the GaInP sub-battery is as follows: an n-type AlInP window layer with a thickness of 200nm and a doping concentration of 1 × 1018cm-3(ii) a N-type Ga with thickness of 300nm0.5In0.5P emitter region with doping concentration of 1 × 1018cm-3(ii) a P-type Ga with thickness of 2500nm0.5In0.5P base region with doping concentration of 1 × 1017cm-3(ii) a P-type AlGaInP back field with thickness of 300nm and doping concentration of 1 × 1017cm-3；
The tunneling junction is positioned between the two sub-batteries and has the structure as follows: p-type Ga with thickness of 100nmxIn1-xP layer and n-type GaxIn1-xP layer with doping concentration of 1 × 1017～1×1018cm-3Wherein x is more than or equal to 0.3 and less than or equal to 0.6;
the InGaAs sub-cell structure is as follows: an n-type GaInP window layer with a thickness of 250nm and a doping concentration of 1 × 1018cm-3(ii) a N-type In with thickness of 350nmxGa1-xAs emitter region with doping concentration of 1 × 1019cm-3Wherein x is more than or equal to 0.3 and less than or equal to 0.8; p-type In with thickness of 2000nmxGa1-xAs base region, dopingThe impurity concentration is 1X 1018cm-3Wherein x is more than or equal to 0.3 and less than or equal to 0.8; p-type AlGaAs back field with thickness of 350nm and doping concentration of 1 × 1017cm-3；
Respectively evaporating Ag electrodes on the surface of the gallium arsenide solar cell and the back surface of the silicon solar cell by using an electron beam evaporation method, wherein the thickness of Ag is 5 nm;
aligning and bonding the gallium arsenide solar cell and the silicon solar cell in a bonding machine, wherein the temperature is 250 ℃, and the pressure is 0.5 Mpa;
corroding and removing an AlAs sacrificial layer in the gallium arsenide solar cell by using 20% HF acid;
respectively preparing upper and lower electrodes of the battery by using an electron beam evaporation method;
evaporating aluminum oxide with the thickness of 50nm and titanium oxide with the thickness of 70nm on the surface of the laminated cell in sequence by using an electron beam evaporation method;
and cutting the laminated cell by utilizing a mechanical scribing process to obtain the silicon-based-gallium arsenide laminated solar cell with the thickness of 3cm multiplied by 4 cm.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
1. The preparation method of the silicon-based gallium arsenide solar cell is characterized by sequentially comprising the following working procedures:
s1, preparing a silicon solar cell;
s2, preparing a gallium arsenide solar cell;
s3, evaporating and plating a semitransparent metal electrode on the silicon solar cell and the gallium arsenide solar cell;
s4, bonding the silicon solar cell and the gallium arsenide solar cell together by using a metal bonding technology;
s5, corroding a sacrificial layer in the gallium arsenide solar cell by adopting a chemical corrosion method, and peeling off the gallium arsenide substrate to obtain the silicon-based gallium arsenide laminated solar cell;
s6, respectively manufacturing an upper electrode of the silicon-based gallium arsenide laminated solar cell on the surface of the upper gallium arsenide solar cell and a lower electrode of the silicon-based gallium arsenide laminated solar cell on the back surface of the silicon solar cell by using a PVD method;
s7, preparing a battery antireflection film on the upper surface of the silicon-based gallium arsenide laminated solar battery by using a PVD method;
and S8, cutting to obtain the silicon-based gallium arsenide laminated solar cell with the required size.
2. The method for manufacturing a silicon-based gallium arsenide solar cell as claimed in claim 2, wherein S1 specifically comprises: the following treatment is sequentially carried out on the silicon wafer: cleaning, preparing a suede, and diffusing to prepare a junction.
3. The method for manufacturing a silicon-based gallium arsenide solar cell as claimed in claim 1, wherein S2 specifically is: on a gallium arsenide substrate, a gallium arsenide solar cell is prepared by utilizing metal organic compound chemical vapor deposition and epitaxial growth.
4. The method for manufacturing a silicon-based gallium arsenide solar cell as claimed in claim 1, wherein S3 specifically is: and (3) respectively evaporating and plating semitransparent metal electrodes on the silicon solar cell and the gallium arsenide solar cell by utilizing a physical vapor deposition technology.
5. The method of claim 1, wherein in S8, the cutting technique is a mechanical or laser scribing process.
6. The method of claim 1, wherein the silicon solar cell is one of a single crystal silicon solar cell, a polycrystalline silicon solar cell, and an amorphous silicon solar cell.
7. The method of claim 1, wherein the gaas solar cell is a single junction gaas solar cell or a double junction gaas solar cell.
8. The method of claim 1, wherein in S3, the semi-transparent metal electrode has a thickness in the range of 4-10 nm.
9. The method as claimed in claim 1, wherein in S4, the bonding temperature is 150-450 deg.C and the bonding pressure is 0.1-1 MPa.
10. A si-gaas solar cell fabricated by the method of any one of claims 1-9.
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| CN105185860A (en) * | 2015-09-25 | 2015-12-23 | 郑州轻工业学院 | Bonding connected silicon substrate and gallium arsenide substrate solar cell |
| CN106653950A (en) * | 2016-12-30 | 2017-05-10 | 中国电子科技集团公司第十八研究所 | Preparation method of gallium arsenide-silicon multi-junction efficient solar cell |
| CN110120435A (en) * | 2018-02-07 | 2019-08-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multijunction solar cell and preparation method thereof |
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