CN112812776A - Corrosive liquid and preparation method and application thereof - Google Patents
Corrosive liquid and preparation method and application thereof Download PDFInfo
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- CN112812776A CN112812776A CN201911120903.2A CN201911120903A CN112812776A CN 112812776 A CN112812776 A CN 112812776A CN 201911120903 A CN201911120903 A CN 201911120903A CN 112812776 A CN112812776 A CN 112812776A
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- 239000007788 liquid Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 239000004094 surface-active agent Substances 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 claims abstract description 16
- 239000002270 dispersing agent Substances 0.000 claims abstract description 16
- 239000001632 sodium acetate Substances 0.000 claims abstract description 16
- 235000017281 sodium acetate Nutrition 0.000 claims abstract description 16
- CHHHXKFHOYLYRE-UHFFFAOYSA-M 2,4-Hexadienoic acid, potassium salt (1:1), (2E,4E)- Chemical compound [K+].CC=CC=CC([O-])=O CHHHXKFHOYLYRE-UHFFFAOYSA-M 0.000 claims abstract description 15
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 15
- 239000004302 potassium sorbate Substances 0.000 claims abstract description 15
- 229940069338 potassium sorbate Drugs 0.000 claims abstract description 15
- 235000010241 potassium sorbate Nutrition 0.000 claims abstract description 15
- VVSMKOFFCAJOSC-UHFFFAOYSA-L disodium;dodecylbenzene;sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O.CCCCCCCCCCCCC1=CC=CC=C1 VVSMKOFFCAJOSC-UHFFFAOYSA-L 0.000 claims abstract description 14
- 239000003513 alkali Substances 0.000 claims abstract description 9
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 60
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- 239000005388 borosilicate glass Substances 0.000 claims description 14
- 230000007797 corrosion Effects 0.000 claims description 14
- 238000005260 corrosion Methods 0.000 claims description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 10
- -1 polysiloxane Polymers 0.000 claims description 9
- 239000002585 base Substances 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 4
- 229920000570 polyether Polymers 0.000 claims description 3
- 239000003381 stabilizer Substances 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 2
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 229920002545 silicone oil Polymers 0.000 claims description 2
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 2
- 239000002671 adjuvant Substances 0.000 claims 1
- 239000013530 defoamer Substances 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 17
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 167
- 230000000052 comparative effect Effects 0.000 description 23
- 239000011521 glass Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 2
- 235000011180 diphosphates Nutrition 0.000 description 2
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229940107816 ammonium iodide Drugs 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WSLQHGMJTGELSF-UHFFFAOYSA-L dipotassium;difluoride Chemical compound [F-].[F-].[K+].[K+] WSLQHGMJTGELSF-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229940051841 polyoxyethylene ether Drugs 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
Abstract
The invention provides a corrosive liquid and a preparation method and application thereof; the corrosive liquid comprises 0.5-4.5% of alkali, 0.01-0.225% of potassium sorbate, 0.01-0.225% of sodium acetate, 0.005-0.15% of sodium dodecyl benzene sulfate, 0.055-0.46% of defoaming agent, 0.055-0.78% of surfactant, 0.035-0.42% of dispersing agent, 0.47-4.42% of functional auxiliary agent and the balance of water by mass percentage; when the corrosive liquid is used for preparing a substrate layer, the back of the substrate can be controlled to form a uniform pyramid-shaped suede, the emitter layer on the front of the substrate can be prevented from being damaged, the size of the pyramid can be controlled, and the pyramid-shaped depth-width ratio can be kept low, so that the specific surface area of the back suede is reduced, the back passivation is facilitated, and the recombination is reduced; the solar energy conversion efficiency of the N-type contact cell is improved.
Description
Technical Field
The invention belongs to the field of corrosion, and relates to a corrosive liquid, and a preparation method and application thereof.
Background
The corrosion refers to that the surface of a substance is damaged due to chemical reaction when the substance is contacted with the substance, and although the corrosion can damage the surface of the substance to a certain extent, the corrosion always has two sides, and if the corrosion process is applied to a proper field and a proper environment, the corrosion process can play a corresponding role in helping life and industrial production; such as etching of glass, to obtain glass with specific patterns, such as metallographic etching, can be used for preparing alloys, or the principle of etching can be used for removing unwanted impurities or obtaining substances needed by human beings.
CN109553305A discloses a glass etching solution, which is prepared by mixing phosphate, pyrophosphate, inorganic alkali, surfactant and deionized water, and the weight fractions are respectively: 0.5-8% of phosphate, 0.5-8% of pyrophosphate, 0.01-0.5% of inorganic base, 5-45% of surfactant, 30-95% of deionized water, 20-99% of potassium difluoride and 1-80% of at least one water-soluble multivalent cation salt; the glass corrosive liquid has a good corrosion effect on glass, but the application range is too narrow, and the glass corrosive liquid is only suitable for corrosion of glass.
CN107604360A discloses a selective copper etching solution, which comprises the following components in percentage by weight: 1-20% of an oxidant, 0.001-5% of a hydrogen peroxide stabilizer, 0.01-10% of an inorganic acid, 1-4% of a soluble organic acid cupric salt, 0.01-8% of a chelating agent and/or a corrosion inhibitor, 0.001-3% of a surfactant and the balance of water, wherein the oxidant mainly comprises hydrogen peroxide; the etching liquid enables uniform etching to control the shape of the electrode, but it is only known to play a role of etching.
For an N-type passivated contact double-sided battery, the back morphology has a great influence on the double-sided rate, surface passivation and metallization contact of the battery. Therefore, it is necessary to provide an etchant that does not damage the mask layer during the fabrication of the N-type passivated contact double-sided cell and does not affect the back passivation structure.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the corrosive liquid and the preparation method and the application thereof, and the corrosive liquid can control the back of the substrate to form a uniform pyramid suede in the process of preparing the substrate layer, can ensure that an emitter layer on the front of the substrate is not damaged, and can control the size of the pyramid to keep the height-width ratio of the pyramid to be lower, thereby reducing the specific surface area of the suede on the back, being beneficial to passivating the back and reducing the recombination; in addition, the method has a higher etching rate, and the etching process can be completed in a shorter time; the N-type contact cell comprising the substrate layer has higher solar energy conversion efficiency.
The invention aims to provide a corrosive liquid, which comprises 0.5-4.5% of alkali, 0.01-0.225% of potassium sorbate, 0.01-0.225% of sodium acetate, 0.005-0.15% of sodium dodecyl benzene sulfate, 0.055-0.46% of defoaming agent, 0.055-0.78% of surfactant, 0.035-0.42% of dispersing agent and the balance of water by mass percentage.
In the process of preparing the substrate layer, the corrosive liquid can control the back surface of the substrate to form a uniform pyramid suede, can ensure that an emitter layer on the front surface of the substrate is not damaged, and can control the size of the pyramid, so that the pyramid is kept at a lower height-to-width ratio, thereby reducing the specific surface area of the back suede, being beneficial to back passivation and reducing recombination.
In the present invention, the alkali may be 0.5%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, or the like in mass%.
In the present invention, the potassium sorbate may be 0.01%, 0.025%, 0.05%, 0.075%, 0.1%, 0.125%, 0.15%, 0.175%, 0.2%, 0.225% or the like in mass%.
In the present invention, the mass percentage of sodium acetate may be 0.01%, 0.025%, 0.05%, 0.075%, 0.1%, 0.125%, 0.15%, 0.175%, 0.2%, 0.225%, or the like.
In the present invention, the sodium dodecylbenzene sulfate may be 0.005%, 0.006%, 0.007%, 0.008%, 0.009%, 0.01%, 0.011%, 0.012%, 0.013%, 0.014%, 0.015%, or the like in mass%.
In the present invention, the defoaming agent may be 0.055%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.45%, 0.46%, or the like in mass%.
In the present invention, the surfactant may be 0.055%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.45%, 0.5%, 0.55%, 0.6%, 0.65%, 0.7%, 0.75%, 0.78%, or the like, in mass%.
In the present invention, the mass percentage of the dispersant may be 0.035%, 0.05%, 0.08%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.42%, etc.
As a preferable technical scheme of the invention, the corrosive liquid comprises 2.4-3% of alkali, 0.0195-0.105% of potassium sorbate, 0.015-0.1% of sodium acetate, 0.012-0.075% of sodium dodecyl benzene sulfate, 0.105-0.31% of defoaming agent, 0.105-0.36% of surfactant, 0.066-0.195% of dispersing agent and the balance of water by mass percent.
In the present invention, the alkali includes sodium hydroxide and/or potassium hydroxide.
In the present invention, the defoaming agent includes polyether-modified silicone oil and/or polysiloxane, preferably polydimethylsiloxane.
In the invention, the surfactant comprises one or more of alkylphenol ethoxylates, fatty alcohol-polyoxyethylene ether, propylene glycol block polyether or perfluoroalkyl quaternary ammonium iodide.
In the present invention, the dispersant includes any one or a combination of at least two of polystyrene, polyethylene, polypropylene, or sodium polyacrylate.
In the present invention, the etching solution further includes 0.47 to 4.42% by mass of a functional auxiliary, such as 0.47%, 0.5%, 0.8%, 1%, 1.2%, 1.5%, 1.7%, 2%, 2.2%, 2.5%, 2.7%, 3%, 3.2%, 3.5%, 3.7%, 4%, 4.42%, etc.
In the present invention, the functional assistant includes an oxidizing agent and/or a stabilizer.
In the invention, the functional auxiliary agent is matched with the defoaming agent, the surfactant and the dispersing agent for use, so that the suede is modified, and the emitter layer on the front side is prevented from being corroded by alkali liquor.
Another object of the present invention is to provide a method for producing the etching solution according to the first object, the method comprising: and mixing potassium hydroxide, a texturing additive, a single-side polishing additive, deionized water and an optional functional auxiliary agent to obtain the corrosive liquid.
In the present invention, the mixing is performed under stirring conditions.
The preparation method of the corrosive liquid has the advantages of easily available raw materials, low price, easy realization and convenient industrial large-scale production and application.
The invention also aims to provide a substrate layer which comprises an N-type substrate layer, an emitter layer and a borosilicate glass layer which are sequentially arranged on the front surface of the N-type substrate layer, and a texture surface of a pyramid-shaped structure arranged on the back surface of the N-type substrate layer, wherein the texture surface of the pyramid-shaped structure is formed by etching the etching solution for one purpose.
The substrate layer is applied to the N-type passivated contact battery, and the texture of the pyramid-shaped structure on the back side can solve the problem of poor back side metalized contact; the pyramid suede formed by etching the etching solution has larger pyramid size and can reduce the height-width ratio of the pyramid, thereby reducing the specific surface area of the back suede and being beneficial to back passivation; and the corrosive liquid can not damage the emitter layer on the front side in the process of etching the back side of the substrate layer; and the etching speed is high and the etching time is short in the etching process, so that the efficiency of industrial production is improved.
In the pyramid-shaped structure, the pyramid structure is directly formed on the back N-shaped substrate, the bottom of the pyramid structure is the deepest position of the pyramid, and the height of the pyramid structure refers to the vertical distance from the top of the pyramid structure to the bottom of the pyramid; the width of the pyramid shape refers to the maximum linear distance between any two points on the bottom surface of the pyramid shape.
In the present invention, the N-type substrate refers to silicon doped with an element of main group V, and illustratively includes a phosphorus-doped single crystal silicon wafer or a phosphorus-doped pseudo single crystal silicon wafer; the N-type base layer will be referred to hereinafter in the same sense.
In the present invention, it is to be understood that the terms "front" and "back" indicate orientations and positional relationships based on those shown in the drawings, which are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
A fourth object of the present invention is to provide a method for producing a substrate layer according to the third object, the method comprising: and etching the pretreated N-type substrate by using the etching solution of one of the purposes to obtain the substrate layer.
In the invention, the etching temperature is 50-90 ℃.
In the invention, the etching time is 300-1200 s.
In the invention, the preparation method of the pretreated N-type substrate comprises the following steps: and carrying out boron diffusion on the N-type substrate of the prefabricated product, and then carrying out single-side etching to obtain the pretreated N-type substrate.
In the invention, the N-type substrate of the prefabricated product is obtained by double-sided texturing of an N-type base layer.
The fifth object of the present invention is to provide a method for producing an N-type passivated contact cell produced by the substrate layer according to the third object.
The sixth purpose of the invention is to provide an N-type passivated contact battery prepared by the preparation method described in the fifth purpose.
The N-type passivated contact battery has the advantages of long minority carrier lifetime, low attenuation and high light conversion efficiency; in addition, the cell structure is also suitable for single-sided and double-sided photovoltaic modules.
In the present invention, an N-type passivated contact cell comprises:
an N-type base layer;
the emitter layer, the oxidation passivation layer, the anti-reflection layer and the front electrode layer are sequentially arranged on the front surface of the N-type substrate layer, and the front electrode layer sequentially penetrates through the anti-reflection layer and the oxidation passivation layer and is connected with the front surface of the emitter layer;
and the oxide layer, the polycrystalline silicon doping layer, the protection layer and the back electrode layer are sequentially arranged on the back surface of the N-type substrate layer, and the back electrode layer penetrates through the protection layer and is connected with the polycrystalline silicon doping layer.
In the description of the invention, it is to be noted that, unless explicitly stated or limited otherwise, the terms "connected" and "connected" are to be interpreted broadly, e.g. as a fixed connection, a detachable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
Compared with the prior art, the invention has the following beneficial effects:
in the process of preparing the substrate layer, the corrosive liquid can control the back surface of the substrate to form a uniform pyramid suede, can ensure that an emitter layer on the front surface of the substrate is not damaged, and can control the size of the pyramid, so that the pyramid is kept at a lower height-to-width ratio, thereby reducing the specific surface area of the back suede, being beneficial to back surface passivation and reducing compounding; in addition, the method has a higher corrosion rate, and the corrosion process can be completed in a shorter time; the N-type contact cell comprising the substrate layer has higher solar energy conversion efficiency, and the light conversion efficiency is as high as 22.97%.
Drawings
FIG. 1 is a schematic view of the structure of a substrate layer in example 1;
FIG. 2 is a scanning electron microscope image of the width of the pyramid-shaped textured surface of the back surface of the substrate layer in example 1;
FIG. 3 is a scanning electron microscope image of the pyramidal texture height of the back side of the substrate layer in example 1;
fig. 4 is a schematic diagram of an N-type passivated contact cell in accordance with an embodiment.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The embodiment provides a corrosive liquid, which comprises, by mass, 2.6% of potassium hydroxide, 0.05% of potassium sorbate, 0.05% of sodium acetate, 0.05% of sodium dodecyl benzene sulfate, 0.5% of a defoaming agent (model LJ-618, manufactured by beijing ruilange), 0.2% of a surfactant (model ZJ-821, manufactured by guangzhou frontier), 0.12% of a dispersant (model ZJ-855, manufactured by guangzhou frontier) and the balance of water.
The preparation method of the corrosive liquid comprises the following steps: and stirring and mixing the raw materials to obtain the corrosive liquid.
The present embodiment further provides a substrate layer, as shown in fig. 1, including an N-type substrate layer 100, an emitter layer 101 and a borosilicate glass layer 102 sequentially disposed on the front surface of the N-type substrate layer, and a textured surface 103 of a pyramid structure disposed on the back surface of the N-type substrate layer, the textured surface being formed by etching with the etching solution.
The method for preparing the substrate layer comprises the following steps:
(1) carrying out double-sided texturing on an N-type substrate layer (a phosphorus-doped monocrystalline silicon wafer) in advance, then carrying out boron diffusion on the textured N-type substrate layer in three steps, wherein in the first step, in boron tribromide with the flow rate of 500sccm, source deposition is carried out at the temperature of 900 ℃ for 40min, in the second step, in nitrogen with the flow rate of 15slm, propulsion treatment is carried out at the temperature of 1050 ℃ for 60min, in the third step, in oxygen with the flow rate of 15slm, oxidation treatment is carried out at the temperature of 1050 ℃ for 80min, and the N-type substrate layer with an emitter layer and a borosilicate glass layer sequentially laminated on the front surface, the back surface and the side surface is obtained;
(2) removing the borosilicate glass layers wound and expanded on the back surface and the side surface of the N-type substrate layer, which is obtained in the step (1), of which the front surface, the back surface and the side surface are sequentially laminated with the emitter layer and the borosilicate glass layer by adopting HF acid corrosion with the concentration of 3 percent to obtain a pretreated N-type substrate;
(3) and (3) placing the pretreated N-type substrate obtained in the step (2) in the corrosive liquid, etching for 600s at 80 ℃, removing the emitter layer on the back and the emitter layer wound and expanded on the side, and simultaneously forming a textured surface with a pyramid structure to obtain a substrate layer.
Fig. 2 is a scanning electron microscope image of the width of the pyramid-shaped texture on the back surface of the substrate layer in the present embodiment, which shows that the width of the pyramid is 2.85 μm; FIG. 3 is a scanning electron microscope image of the pyramid-shaped texture height of the back surface of the substrate layer in this embodiment, which shows that the pyramid-shaped texture height is 1.06 μm; as can be seen from fig. 2 and 3, the texture of the pyramid-shaped structure obtained in this embodiment has a low aspect ratio of 0.37.
Example 2
The embodiment provides a corrosive liquid, which comprises, by mass, 2.4% of potassium hydroxide, 0.105% of potassium sorbate, 0.015% of sodium acetate, 0.075% of sodium dodecyl benzene sulfate, 0.105% of a defoaming agent (model LQ-0907, manufacturer tianjin kelangqi), 0.36% of a surfactant (model FP415, manufacturer guangzhou Runzi), 0.066% of a dispersant (model 5027, manufacturer Runxin chemical industry), and the balance of water.
The preparation method of the corrosive liquid comprises the following steps: and stirring and mixing the raw materials to obtain the corrosive liquid.
The embodiment also provides a substrate layer, which comprises an N-type substrate layer, an emitter layer and a borosilicate glass layer which are sequentially arranged on the front surface of the N-type substrate layer, and a texture surface of a pyramid-shaped structure arranged on the back surface of the N-type substrate layer, wherein the texture surface is formed by etching the etching liquid.
The substrate layer was prepared in the same manner as in example 1 except that the etching temperature was 50 ℃ and the etching time was 1200 seconds.
The aspect ratio of the textured surface of the pyramid-shaped structure obtained in this embodiment is 0.33.
Example 3
The embodiment provides a corrosive liquid, which comprises, by mass, 3% of potassium hydroxide, 0.0195% of potassium sorbate, 0.1% of sodium acetate, 0.012% of sodium dodecyl benzene sulfate, 0.31% of a defoaming agent (model LJ-618, beijing ruilange), 0.105% of a surfactant (model FP415, product guangzhou Runzhong), 0.195% of a dispersant (model ZJ-855, product guangzhou Zhijing), and the balance of water.
The preparation method of the corrosive liquid comprises the following steps: and stirring and mixing the raw materials to obtain the corrosive liquid.
The embodiment also provides a substrate layer, which comprises an N-type substrate layer, an emitter layer and a borosilicate glass layer which are sequentially arranged on the front surface of the N-type substrate layer, and a texture surface of a pyramid-shaped structure arranged on the back surface of the N-type substrate layer, wherein the texture surface is formed by etching the etching liquid.
The substrate layer was prepared in the same manner as in example 1 except that the etching temperature was 90 deg.c and the etching time was 300 seconds.
The aspect ratio of the textured surface of the pyramid-shaped structure obtained in this embodiment is 0.27.
Example 4
The embodiment provides a corrosive liquid, which comprises, by mass, 0.5% of sodium hydroxide, 0.225% of potassium sorbate, 0.01% of sodium acetate, 0.15% of sodium dodecylbenzene sulfate, 0.055% of a defoaming agent (model LQ-0907, manufacturer tianjin kelangqi), 0.78% of a surfactant (model ZJ-821, manufacturer guangzhou border-stopper), 0.035% of a dispersant (model 5027, manufacturer Runxin chemical industry), and the balance of water.
The preparation method of the corrosive liquid comprises the following steps: and stirring and mixing the raw materials to obtain the corrosive liquid.
The embodiment also provides a substrate layer, which comprises an N-type substrate layer, an emitter layer and a borosilicate glass layer which are sequentially arranged on the front surface of the N-type substrate layer, and a texture surface of a pyramid-shaped structure arranged on the back surface of the N-type substrate layer, wherein the texture surface is formed by etching the etching liquid.
The substrate layer was prepared in the same manner as in example 1 except that the etching temperature was 80 ℃ and the etching time was 500 seconds.
The aspect ratio of the textured surface of the pyramid-shaped structure obtained in this embodiment is 0.23.
Example 5
The embodiment provides a corrosive liquid, which comprises, by mass, 4.5% of sodium hydroxide, 0.01% of potassium sorbate, 0.225% of sodium acetate, 0.005% of sodium dodecylbenzene sulfate, 0.46% of a defoaming agent (model LJ-618, manufactured by beijing ruilange), 0.055% of a surfactant (model ZJ-821, manufactured by guangzhou tang), 0.42% of a dispersing agent (model ZJ-855, manufactured by guangzhou tang) and the balance of water.
The preparation method of the corrosive liquid comprises the following steps: and stirring and mixing the raw materials to obtain the corrosive liquid.
The embodiment also provides a substrate layer, which comprises an N-type substrate layer, an emitter layer and a borosilicate glass layer which are sequentially arranged on the front surface of the N-type substrate layer, and a texture surface of a pyramid-shaped structure arranged on the back surface of the N-type substrate layer, wherein the texture surface is formed by etching the etching liquid.
The substrate layer was prepared in the same manner as in example 1 except that the etching temperature was 60 ℃ and the etching time was 1000 seconds.
The aspect ratio of the textured surface of the pyramid-shaped structure obtained in this embodiment is 0.38.
Comparative example 1
The etching solution used in this comparative example was a mixture of hydrofluoric acid having a concentration of 7% and nitric acid having a concentration of 24%.
The method for preparing the substrate layer comprises the following steps: the N-type base layer obtained in step (1) in example 1, in which the emitter layer and the borosilicate glass layer were sequentially laminated on the front surface, the back surface, and the side surfaces, was etched with hydrofluoric acid having a concentration of 7% and nitric acid having a concentration of 24% to remove the emitter layer and the borosilicate glass layer having been diffracted on the back surface and the side surfaces, thereby obtaining a substrate layer.
The back surface obtained in the comparative example is a relatively flat polished-like back surface structure, and a pyramid-shaped structure is difficult to form.
Comparative example 2
The only difference from example 1 is that sodium acetate is not included, the amount of sodium dodecylbenzene sulfate added is the same as that of example 1, and the remaining composition and preparation method are the same as those of example 1.
The aspect ratio of the texture of the pyramid-shaped structure obtained in the comparative example was 0.48; as can be seen from a comparison between comparative example 2 and example 1, the pyramid structure obtained in example 1 has a lower aspect ratio.
Comparative example 3
The only difference from example 1 is that sodium dodecylbenzene sulfate was not included, sodium acetate was added in the same amount as in example 1, and the remaining composition and preparation method were the same as in example 1.
The aspect ratio of the texture of the pyramid-shaped structure obtained in the comparative example was 0.55; as can be seen from a comparison between comparative example 3 and example 1, the pyramid structure obtained in example 1 has a lower aspect ratio.
Comparative example 4
The difference from example 1 is that potassium sorbate is not included, and the remaining composition and preparation method are the same as those of example 1.
The aspect ratio of the texture of the pyramid-shaped structure obtained in the comparative example was 0.47; as can be seen from a comparison between comparative example 4 and example 1, the pyramid structure obtained in example 1 has a lower aspect ratio.
Comparative example 5
The difference from example 1 is only in the composition of the etching solution, which includes: 2% of potassium hydroxide, 0.5% of potassium sorbate, 0.005% of sodium acetate, 0.3% of sodium dodecyl benzene sulfonate, 0.02% of defoaming agent, 0.9% of surfactant, 0.02% of dispersant and the balance of water.
The aspect ratio of the texture of the pyramid-shaped structure obtained in the comparative example was 0.51; as can be seen from a comparison between comparative example 5 and example 1, the pyramid structure obtained in example 1 has a lower aspect ratio.
Comparative example 6
The difference from example 1 is only in the composition of the etching solution, which includes: 5% of potassium hydroxide, 0.005% of potassium sorbate, 0.3% of sodium acetate, 0.001% of sodium dodecyl benzene sulfonate, 0.5% of defoaming agent, 0.03% of surfactant, 0.5% of dispersing agent and the balance of water.
The aspect ratio of the texture of the pyramid-shaped structure obtained in the comparative example was 0.43; as can be seen from a comparison of comparative example 6 and example 1, the pyramid structure obtained in example 1 has a lower aspect ratio.
The substrate layers of examples 1-5 and comparative examples 1-6 were prepared to produce N-type passivated contact cells, as shown in fig. 4, comprising: an N-type substrate layer 1; the emitter layer 2, the oxidation passivation layer 3, the anti-reflection layer 4 and the front electrode layer 5 are arranged on the front surface of the N-type substrate layer and are sequentially connected, and the front electrode layer 5 sequentially penetrates through the anti-reflection layer 4 and the oxidation passivation layer 3 and is connected with the emitter layer 2; the oxide layer 6, the polycrystalline silicon doping layer 7, the protection layer 8 and the back electrode layer 9 are arranged on the back surface of the N-type substrate layer 1 and are sequentially connected, and the back electrode layer 9 penetrates through the protection layer 8 and is connected with the polycrystalline silicon doping layer 7; the oxidation passivation layer is an aluminum oxide passivation layer; the thickness of the aluminum oxide passivation layer is 10 nm; the anti-reflection layer is a silicon nitride anti-reflection layer; the thickness of the antireflection layer is 100 nm; the refractive index of the anti-reflection layer is 2.02; the front electrode layer is an Ag-Al electrode layer; the thickness of the front electrode layer is 20 μm; the oxide layer is a silicon oxide layer; the thickness of the silicon oxide layer is 2 nm; the thickness of the polycrystalline silicon doping layer is 200 nm; the protective layer is a silicon nitride layer; the thickness of the silicon nitride layer is 100 nm; the back electrode layer is a silver electrode layer; the thickness of the silver electrode layer was 10 μm.
The preparation method of the N-type passivated contact battery comprises the following steps:
s1, oxidizing the back surface of the substrate layer with nitric acid for 10min, then performing thermal oxidation for 10min at the temperature of 580 ℃ to obtain an N-type substrate layer with an oxide layer on the back surface, then depositing polycrystalline silicon on the surface of the oxide layer by a chemical vapor deposition method under the condition that the pressure is 300mTorr, performing phosphorus diffusion in three steps under the condition that a phosphorus source is phosphorus oxychloride, performing first source-through deposition for 30min at 750 ℃ in phosphorus oxychloride with the flow of 500sccm in the first step, performing propulsion treatment for 40min at 900 ℃ in nitrogen with the flow of 3000sccm in the second step, performing second source-through deposition for 5min at 770 ℃ in phosphorus oxychloride with the flow of 300sccm in the third step, and obtaining the N-type substrate layer with the doped layer;
s2, removing the phosphorosilicate glass layer on the front surface of the N-type substrate layer with the doped layer obtained in the step S1 through a first etching method by using a hydrofluoric acid solution with the concentration of 5%, then removing the polycrystalline silicon wound and plated on the front surface of the N-type substrate layer with the doped layer through a potassium hydroxide solution with the concentration of 20%, and finally removing the borosilicate glass layer on the front surface of the N-type substrate layer with the doped layer and the phosphorosilicate glass layer on the back surface through a second etching method by using a hydrofluoric acid solution with the concentration of 10% to obtain the N-type substrate layer with the silicon oxide layer and the polycrystalline silicon doped layer on the back surface;
s3, firstly forming an aluminum oxide passivation layer with the thickness of 5nm on the front side of the processed N-type substrate layer with the silicon oxide layer and the N-type polycrystalline silicon layer on the back side obtained in the step S2 through an atomic layer deposition method, then forming a silicon nitride antireflection layer with the thickness of 80nm and the refractive index of 2.02 through a plasma chemical vapor deposition method, and forming a silicon nitride protection layer with the thickness of 120nm on the back side through the plasma chemical vapor deposition method to obtain the N-type substrate layer with a passivation structure;
and S4, screen printing the N-type base layer with the passivation structure obtained in the step S3, and then sintering at 800 ℃ for 60S to form a front Ag-Al electrode layer and a back Ag electrode layer, so that the N-type passivation contact battery is obtained.
The obtained N-type passivated contact cell was subjected to performance testing, the test results are shown in table 1:
TABLE 1
In table 1:
wherein, the voltage (V), the current (A) and the filling factor (%) are the corresponding voltage, current and filling factor given in the table 1; the area of the battery is 244.32 square centimeters; the voltage (V) and the current (A) are the voltage and the current generated by the battery under the irradiation of 1000W light intensity, the model of the adopted testing machine is German Halm-2400, and the model of the testing software is 18-KW 05; the fill factor is the ratio of the maximum output power of the battery to the product of the short circuit current and the open circuit voltage.
As can be seen from table 1, the passivated contact cells prepared according to the present invention have higher light conversion efficiency; as can be seen from the comparison between example 1 and comparative example 1, the back structure obtained by acid etching is similar to a polished flat structure, and the open-circuit voltage and the short-circuit current are higher in the aspect of electrical properties, but the filling factor is lower and the efficiency is lower; as can be seen from the comparison between the example 1 and the comparative examples 2 to 3, the suede can be modified by the sodium acetate and the sodium dodecyl benzene sulfate which are used together, the height-width ratio is reduced, and the open-circuit voltage and the short-circuit current of the battery are improved; from the comparison between the embodiment 1 and the comparative example 4, the potassium sorbate can modify the suede surface to a certain extent, reduce the aspect ratio and improve the open-circuit voltage and the short-circuit current of the battery; as can be seen from the comparison between the embodiment 1 and the comparative examples 5 to 6, the suede structure with a low aspect ratio can be obtained by optimizing the proportion of the corrosive liquid, and the open-circuit voltage and the short-circuit current of the battery can be improved, so that the conversion efficiency of the battery is improved.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. The corrosive liquid is characterized by comprising, by mass, 0.5-4.5% of alkali, 0.01-0.225% of potassium sorbate, 0.01-0.225% of sodium acetate, 0.005-0.15% of sodium dodecylbenzene sulfate, 0.055-0.46% of a defoaming agent, 0.055-0.78% of a surfactant, 0.035-0.42% of a dispersing agent, 0.47-4.42% of a functional auxiliary agent and the balance of water.
2. The corrosion solution according to claim 1, wherein the corrosion solution comprises, by mass, 2.4-3% of alkali, 0.0195-0.105% of potassium sorbate, 0.015-0.1% of sodium acetate, 0.012-0.075% of sodium dodecylbenzene sulfate, 0.105-0.31% of an antifoaming agent, 0.105-0.36% of a surfactant, 0.066-0.195% of a dispersant, 2.75-4.42% of a functional auxiliary agent, and the balance of water.
3. The etching solution of claim 1 or 2, wherein the base comprises sodium hydroxide and/or potassium hydroxide;
preferably, the defoamer comprises a polyether modified silicone oil and/or a polysiloxane, preferably a polydimethylsiloxane.
4. The etching solution of any one of claims 1 to 3, wherein the surfactant comprises a combination of any one or more of alkylphenol ethoxylates, fatty alcohol-polyoxyethylene ethers, propylene glycol block polyethers, or perfluoroalkyl quaternary ammonium iodides;
preferably, the dispersant comprises any one or a combination of at least two of polystyrene, polyethylene, polypropylene or sodium polyacrylate.
5. The etching solution of any one of claims 1 to 4, further comprising 0.47 to 4.42 mass% of a functional auxiliary;
preferably, the functional adjuvant comprises an oxidizing agent and/or a stabilizing agent.
6. The method of preparing the etching solution according to any one of claims 1 to 5, comprising: mixing potassium hydroxide, a texturing additive, a single-side polishing additive, deionized water and an optional functional auxiliary agent to obtain the corrosive liquid;
preferably, the mixing is performed under stirring conditions.
7. A substrate layer is characterized by comprising an N-type substrate layer, an emitter layer and a borosilicate glass layer which are sequentially arranged on the front surface of the N-type substrate layer, and a texture surface of a pyramid-shaped structure arranged on the back surface of the N-type substrate layer, wherein the texture surface of the pyramid-shaped structure is formed by etching with the etching solution according to any one of claims 1 to 5.
8. The method for producing a substrate layer according to claim 7, comprising: etching the pretreated N-type substrate by using the corrosive liquid of any one of claims 1 to 5 to obtain the substrate layer;
preferably, the etching temperature is 50-90 ℃;
preferably, the etching time is 300-;
preferably, the preparation method of the pretreated N-type substrate comprises the following steps: b diffusion is carried out on the N-type substrate of the prefabricated product, then back etching is carried out to remove the borosilicate glass layer with the back and the side being wound and expanded, and the pretreated N-type substrate is obtained;
preferably, the preform N-type substrate is double-sided textured with an N-type base layer.
9. A method of making an N-type passivated contact cell, wherein the N-type passivated contact cell is made with the substrate layer of claim 7.
10. The N-type passivated contact cell prepared according to the preparation method of claim 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113416547A (en) * | 2021-06-18 | 2021-09-21 | 常州时创能源股份有限公司 | Alkali corrosion auxiliary agent for cleaning winding-plated polycrystalline silicon and application thereof |
| CN113502163A (en) * | 2021-09-10 | 2021-10-15 | 杭州晶宝新能源科技有限公司 | Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005504A (en) * | 2010-10-15 | 2011-04-06 | 锦州华昌光伏科技有限公司 | Silicon wafer fine hair making method capable of improving solar cell conversion efficiency |
| CN102479698A (en) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | Compositions and methods for texturing of silicon wafers |
| CN105047742A (en) * | 2015-09-07 | 2015-11-11 | 中国东方电气集团有限公司 | Double-sided N-type crystalline silicon cell and preparation method thereof |
| CN105206699A (en) * | 2015-09-07 | 2015-12-30 | 中国东方电气集团有限公司 | Back surface junction N-type double-sided crystal silicon cell and preparation method thereof |
| CN105226115A (en) * | 2015-09-07 | 2016-01-06 | 中国东方电气集团有限公司 | A kind of N-type crystal silicon battery and preparation method thereof |
| CN106601862A (en) * | 2015-10-15 | 2017-04-26 | 钧石(中国)能源有限公司 | Texturing method for reducing reflectivity of monocrystalline silicon heterojunction solar cell |
| CN109326660A (en) * | 2018-09-16 | 2019-02-12 | 苏州润阳光伏科技有限公司 | Solar cell monocrystalline silicon substrate flannelette generates technique |
| CN109553305A (en) * | 2017-09-25 | 2019-04-02 | 鄄城广泰耐磨制品有限公司 | A kind of glass erosion liquid |
| CN110042474A (en) * | 2019-05-18 | 2019-07-23 | 上海汉遥新材料科技有限公司 | A kind of monocrystaline silicon solar cell flocking additive and its application |
| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN110396725A (en) * | 2019-07-10 | 2019-11-01 | 天津爱旭太阳能科技有限公司 | A kind of flocking additive and its application of monocrystalline silicon piece |
-
2019
- 2019-11-15 CN CN201911120903.2A patent/CN112812776A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102005504A (en) * | 2010-10-15 | 2011-04-06 | 锦州华昌光伏科技有限公司 | Silicon wafer fine hair making method capable of improving solar cell conversion efficiency |
| CN102479698A (en) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | Compositions and methods for texturing of silicon wafers |
| CN105047742A (en) * | 2015-09-07 | 2015-11-11 | 中国东方电气集团有限公司 | Double-sided N-type crystalline silicon cell and preparation method thereof |
| CN105206699A (en) * | 2015-09-07 | 2015-12-30 | 中国东方电气集团有限公司 | Back surface junction N-type double-sided crystal silicon cell and preparation method thereof |
| CN105226115A (en) * | 2015-09-07 | 2016-01-06 | 中国东方电气集团有限公司 | A kind of N-type crystal silicon battery and preparation method thereof |
| CN106601862A (en) * | 2015-10-15 | 2017-04-26 | 钧石(中国)能源有限公司 | Texturing method for reducing reflectivity of monocrystalline silicon heterojunction solar cell |
| CN109553305A (en) * | 2017-09-25 | 2019-04-02 | 鄄城广泰耐磨制品有限公司 | A kind of glass erosion liquid |
| CN109326660A (en) * | 2018-09-16 | 2019-02-12 | 苏州润阳光伏科技有限公司 | Solar cell monocrystalline silicon substrate flannelette generates technique |
| CN110042474A (en) * | 2019-05-18 | 2019-07-23 | 上海汉遥新材料科技有限公司 | A kind of monocrystaline silicon solar cell flocking additive and its application |
| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN110396725A (en) * | 2019-07-10 | 2019-11-01 | 天津爱旭太阳能科技有限公司 | A kind of flocking additive and its application of monocrystalline silicon piece |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113416547A (en) * | 2021-06-18 | 2021-09-21 | 常州时创能源股份有限公司 | Alkali corrosion auxiliary agent for cleaning winding-plated polycrystalline silicon and application thereof |
| CN113502163A (en) * | 2021-09-10 | 2021-10-15 | 杭州晶宝新能源科技有限公司 | Chemical auxiliary agent for forming solar cell back structure, and preparation method and application thereof |
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