CN106567999B - Laser diode heating and radiating structure - Google Patents

Laser diode heating and radiating structure Download PDF

Info

Publication number
CN106567999B
CN106567999B CN201610954890.9A CN201610954890A CN106567999B CN 106567999 B CN106567999 B CN 106567999B CN 201610954890 A CN201610954890 A CN 201610954890A CN 106567999 B CN106567999 B CN 106567999B
Authority
CN
China
Prior art keywords
heat
laser diode
mounting hole
diode
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610954890.9A
Other languages
Chinese (zh)
Other versions
CN106567999A (en
Inventor
谢克俊
曹奇雄
胡鸿车
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tiantai Tianyu Optoelectronic Co ltd
Original Assignee
Tiantai Tianyu Optoelectronic Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tiantai Tianyu Optoelectronic Co ltd filed Critical Tiantai Tianyu Optoelectronic Co ltd
Priority to CN201610954890.9A priority Critical patent/CN106567999B/en
Publication of CN106567999A publication Critical patent/CN106567999A/en
Application granted granted Critical
Publication of CN106567999B publication Critical patent/CN106567999B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/502Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/503Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/77Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/90Heating arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention relates to a laser diode. The utility model provides a laser diode adds heat radiation structure, includes laser diode, radiator and heating structure, its characterized in that, heating structure includes heat conduction base plate and the paster resistance of setting on the heat conduction base plate, the radiator is equipped with the diode mounting hole and the heating structure mounting hole that communicate together, laser diode installs in the diode mounting hole, the heat conduction base plate is installed in the heating structure mounting hole and with laser diode heat conductivity links together. The invention provides a laser diode heating and radiating structure which can quickly transfer heat to a laser diode and has small influence on the heat radiation of the laser diode, and solves the problems that the heat radiation is not influenced by the influence of high heating efficiency of the existing laser diode and the heat transfer is slow.

Description

Laser diode heating and radiating structure
Technical Field
The invention relates to a laser diode, in particular to a heating and radiating structure of the laser diode.
Background
The requirement of the green laser diode on the environmental temperature is particularly high, the brightness of the green laser diode in the market is reduced when the environmental temperature is lower than 25 ℃, the brightness of the green laser diode is also reduced when the environmental temperature is higher than 30 ℃, so that the heat dissipation and the heating are considered when the green laser diode is used, the green laser diode is particularly used in winter when being used as an outdoor product, the environmental temperature is lower, the temperature of some countries is nearly-25 ℃, the green laser diode is not lightened at all, if a heating structure is not designed on the product to heat the laser diode, the product cannot work, two heating modes are provided for the laser diode at present, one mode is that a heating belt is wound on the laser diode and then the laser diode is installed on a radiator to heat as disclosed in Chinese patent application No. 95209161.5 and patent document named as a metal laser diode heater, this heating method is seriously unsuitable for heating a laser diode because it causes poor heat dissipation of the laser diode when heat dissipation is required. Another is to place a power resistor on the surface of the heat sink of the laser diode to heat the heat sink, and then transfer the heat to the laser diode through the heat sink, because the heat transfer of the heat sink surface to the laser tube green laser diode is very long when starting, the starting time in the low temperature environment (i.e. the time when the laser diode is heated to above 25 ℃ to normally emit light) is at least more than 30 minutes, i.e. the heating efficiency is low.
Disclosure of Invention
The invention provides a laser diode heating and radiating structure which can quickly transfer heat to a laser diode and has small influence on the heat radiation of the laser diode, and solves the problems that the heat radiation is not influenced by the influence of high heating efficiency of the existing laser diode and the heat transfer is slow.
The technical problem is solved by the following technical scheme: the utility model provides a laser diode adds heat radiation structure, includes laser diode, radiator and heating structure, its characterized in that, heating structure includes heat conduction base plate and the paster resistance of setting on the heat conduction base plate, the radiator is equipped with the diode mounting hole and the heating structure mounting hole that communicate together, laser diode installs in the diode mounting hole, the heat conduction base plate is installed in the heating structure mounting hole and with laser diode heat conductivity links together. According to the technical scheme, the original power resistor is replaced by the patch resistor and is attached to the heat conducting plate, heat of the resistor is transmitted to the heat conducting plate, namely the heat conducting plate serves as a radiator of the resistor, the heat conducting plate is in heat conduction connection with the laser diode, so that the generated heat can be rapidly transmitted to the laser diode, and compared with the second mode, the time for heating the laser diode from-25 ℃ to 25 ℃ of a normal light-emitting machine is only 5-10 minutes (the existing time is 30 minutes). Meanwhile, when the laser diode is not heated, the influence of the existence of the heat conducting plate on the heat dissipation effect of the laser diode is small.
Preferably, a side of the heat conducting substrate away from the laser diode is disconnected from a hole wall of the heating structure mounting hole. The heat during heating can most flow to laser diode place, plays the effect that improves the heating effect, and the hindrance when dispelling the heat is few.
Preferably, the chip resistor is disposed on a side of the heat conducting substrate away from the laser diode. The heat transfer of the chip resistor to the heat-conducting plate can be ensured, and the existence of the chip resistor can not interfere with the heat transfer effect between the heat-conducting plate and the laser diode.
Preferably, the surface of the heat sink is provided with heat dissipation fins, and the heating structure mounting hole is located on one side of the diode mounting hole close to the heat dissipation fins. If the diode mounting hole is located between the heating structure mounting hole and the heat dissipation fin, heat is easily lost by the heat dissipation fin when heating. The arrangement of the heat dissipation fins improves the heat dissipation effect.
Preferably, the heat dissipation fins are at least two, and the free ends of all the heat dissipation fins are located on the same cylindrical surface. The heat dissipation effect is good.
Preferably, the radiator is provided with a radiator mounting hole extending along the depth direction of the diode mounting hole, and the hole wall of the radiator mounting hole is provided with a notch. When the present invention is mounted, the heat sink mounting hole can be connected to a component (hereinafter referred to as a support component) to which the present invention is mounted by fastening a bolt through the heat sink mounting hole, or the support component can be fixed by inserting a connecting pin of the support component into the heat sink mounting hole by the tightening action of elastic deformation of the heat sink mounting hole. The convenience during installation is good.
Preferably, the opening width of the portion of the diode mounting hole in communication with the heating structure mounting hole is less than one quarter of the circumference of the diode mounting hole. The heating structure can be rapidly heated while the heat dissipation effect caused by the arrangement of the heating structure is reduced.
Preferably, the laser diode is suspended in the diode mounting hole through the heat conducting substrate, the laser diode and the diode mounting hole are directly or indirectly abutted together when the temperature is more than 25 ℃, and the linear expansion coefficient of the heat sink is smaller than that of the laser diode or that of a component which indirectly abuts the laser diode and the diode mounting hole. When the temperature is lower than 25 ℃, the laser diode needs to be heated, and at the moment, under the action of cold contraction, a clearance fit is formed between the diode mounting hole and the laser diode tube, so that the heat of the laser diode can be effectively prevented from further losing, and the effect of improving the heating efficiency is achieved. When the LED lamp stably rises, the tight fit between the small diode mounting hole with the thermal expansion effect and the laser diode is formed, so that good heat conduction can be realized, and the heat dissipation effect can be high. The heat conduction effect between the laser diode and the radiator can be automatically reduced and the heat radiation can be automatically improved during heating.
Preferably, the heat conducting substrate is integrally formed with a heat conducting sleeve penetrating through the diode mounting hole, the laser diode is connected in the heat conducting sleeve, when the temperature is above 25 ℃, the laser diode is abutted against the diode mounting hole through the heat conducting sleeve, and the linear expansion coefficient of the heat radiator is smaller than that of the heat conducting sleeve. The heat of the heating structure can be further ensured to be well and quickly transferred to the laser diode.
Preferably, one end of the heat conduction sleeve and one end of the radiator are in sealing butt joint with the sealing plate, the other end of the heat conduction sleeve and the other end of the radiator are in sealing connection through the annular liquid storage bag, when a gap is formed between the heat conduction sleeve and the diode mounting hole, a sealing cavity is formed among the heat conduction sleeve, the sealing plate, the radiator and the annular liquid storage bag, the sealing cavity is communicated with the annular liquid storage bag, and heat insulation liquid in the annular liquid storage bag can flow into the sealing cavity under the action of gravity or elastic contraction of the annular liquid storage bag. Because when being less than 25 ℃ the cold contraction effect can lead to producing the clearance and reducing the effect of heat conduction between heat conduction cover and the radiator and play the effect that improves the heating effect between heat conduction cover and the diode mounting hole, adiabatic liquid fills and plays further improvement adiabatic effect and make the heating effect better in this clearance this moment. When the temperature is higher than 25 ℃ or 30 ℃ and heat dissipation is needed, the heat conduction sleeve and the diode mounting hole are tightly pressed together under the action of thermal expansion, and heat insulation liquid between the heat conduction sleeve and the diode mounting hole is extruded out in the pressing process and stored in the annular liquid storage bag. The heating effect during heating can be further improved.
The invention has the following advantages: the heating speed is high; the influence of the arrangement of the heating structure on the heat dissipation effect is small.
Drawings
Fig. 1 is a schematic diagram of a first embodiment of the invention.
Fig. 2 is a schematic diagram of a second embodiment of the present invention.
Fig. 3 is a partial schematic view of a third embodiment of the invention.
In the figure: the heat radiator 91, the diode mounting hole 911, the heating structure mounting hole 912, the heat dissipation fin 913, the free end 9131 of the heat dissipation fin, the heat radiator mounting hole 914, the notch 9141, the laser diode 92, the diode power supply leading-in pin 921, the heating structure 93, the heat conduction substrate 931, the chip resistor 932, the heat conduction glue 933, the heat conduction sleeve 934, the sealing plate 94, the annular liquid storage bag 95, the sealing cavity 96, and the opening width W of the communication part of the diode mounting hole and the heating structure mounting hole.
Detailed Description
The invention is further described with reference to the following figures and examples.
First embodiment, referring to fig. 1, a laser diode heating and heat dissipating structure includes a heat sink 91, a laser diode 92, and a heating structure 93.
The heat sink 91 is provided with a diode mounting hole 911 and a heating structure mounting hole 912, a heat dissipation fin 913, and a heat sink mounting hole 914 which are communicated together. The diode mounting hole 911 is a circular hole. The heating structure mounting holes 912 are rectangular holes. The diode mounting hole 911 is through the heating structure mounting hole 912, and specifically, the diode mounting hole 911 is through in a manner that a circle thereof extends into the heating structure mounting hole 912, that is, in an intersecting manner. The opening width W of the portion where the diode mounting hole communicates with the heating structure mounting hole is less than a quarter of the circumference of the diode mounting hole 911. The heating structure mounting hole 912 is located on a side of the diode mounting hole 911 near the heat dissipation fins 913. The heat dissipation fins 913 are located on the surface of the heat sink 91. There are 17 fins of heat dissipating fins 913. The free ends 9131 of all the fins are on the same cylindrical surface. The extension directions, i.e., the depth directions, of the heat sink mounting hole 914, the diode mounting hole 911, and the heating structure mounting hole 912 are the same. The wall of the heat sink mounting hole 914 is provided with a notch 9141.
The laser diode 92 is cylindrical. The laser diode 92 is provided with a diode power supply lead-in pin 921. The laser diode 92 is inserted into the diode mounting hole 21.
The heating structure 93 includes a thermally conductive substrate 931 and a chip resistor 932 disposed on the thermally conductive substrate. The heat conductive substrate 931 is bonded in the heating structure mounting hole 912 in a flat manner by the heat conductive paste 933. The thermal conductive paste 933 also bonds the thermal conductive substrate 931 and the laser diode 92 together. The side of the thermally conductive substrate 931 remote from the laser diode 92 is disconnected from the walls of the heating structure mounting hole 912. The chip resistor 932 is disposed on a side of the thermally conductive substrate 931 remote from the laser diode 92.
In use, the present invention is secured to a product to which the present invention is to be mounted via the heat sink mounting hole 914. When the temperature of the laser diode 92 is higher than 30 ℃, no power is supplied to the heating structure 93, that is, no power is supplied to the chip resistor 932, and the heat generated by the laser diode 92 is directly transferred to the heat sink 91 through the heat conducting substrate 931 to dissipate the heat. When the temperature of the laser diode 92 is lower than 25 ℃, the chip resistor 932 is powered on, and heat generated by the chip resistor 932 is transferred to the heat conducting substrate 931 and then transferred to the laser diode 92 to heat the laser diode 92 to the temperature of not lower than 25 ℃.
The second embodiment is different from the first embodiment in that:
the heat conducting substrate 931 is provided with a heat conducting sleeve 934. The heat-conducting substrate 931 and the heat-conducting sleeve 934 are integrally formed. The heat conducting sleeve 934 is inserted into the diode mounting hole 911. The laser diode 92 is inserted into the thermal conductive sleeve 934 and suspended in the diode mounting hole 911. The linear expansion coefficient of the heat conducting sleeve 934 is greater than that of the heat sink 91, that is, the variation of the radial dimension generated by the heat conducting sleeve during expansion with heat and contraction with cold is greater than that generated by the diode mounting hole. When the temperature is above 25 ℃, the heat conducting sleeve 934 and the diode mounting hole 911 are abutted together to realize the indirect abutment of the laser diode 92 and the diode mounting hole 911.
In the use process, when the temperature is higher than 25 ℃, the radial variation of the heat conduction sleeve 934 is larger than that of the laser diode mounting hole 911, so that the heat conduction sleeve 934 and the laser diode mounting hole 911 are abutted closely to conduct better heat conduction. When the temperature is less than 25 ℃, the radial reduction amount of the heat conduction sleeve 934 is greater than the radial reduction amount of the laser diode mounting hole 911, so that a gap is formed between the heat conduction sleeve 934 and the laser diode mounting hole 911, the effect of reducing the heat conduction sleeve 934 to transfer heat to the heat radiator 91 is achieved, the heat transferred by the heat conduction sleeve 934 can be more fully transferred to the laser diode 92, and the effect of improving the heating effect is achieved.
The third embodiment is different from the second embodiment in that:
referring to fig. 3, one end of the heat conductive jacket 934 and one end of the heat sink 91 are both sealingly abutted against the sealing plate 94, i.e., both the heat conductive jacket and the heat sink are slidable relative to the sealing plate 94. The other end of the heat conducting sleeve 934 and the other end of the heat sink 91 are hermetically connected together by an annular reservoir 95. The annular reservoir 95 is filled with a heat insulating liquid which keeps the annular reservoir 95 in an elastically expanded state. When the temperature is below 25 ℃, a sealing cavity 96 is formed among the heat conducting sleeve 934, the sealing plate 94, the heat radiator 91 and the annular liquid storage bag 95. The sealed chamber 96 communicates with the annular reservoir 95.
The annular reservoir 95 is positioned in use above the sealed cavity 96 of the annular reservoir 95. When being less than 25 ℃ the cold contraction effect can lead to producing the clearance and making sealed chamber 96 appear between heat conduction cover and the diode mounting hole, and the adiabatic liquid in annular liquid storage bag 95 flows to sealed chamber 96 under the elastic shrinkage effect of gravity and annular liquid storage bag this moment, plays further to reduce the volume that heat conduction cover 934 transmitted for radiator 91 for the heating effect further promotes. When the temperature is higher than 25 ℃ or 30 ℃ and heat dissipation is needed, the heat conduction sleeve and the diode mounting hole are tightly pressed together under the action of thermal expansion, so that the sealing cavity 96 disappears, and the heat insulation liquid in the sealing cavity 96 is squeezed back into the annular liquid storage bag 95 again to be stored.

Claims (8)

1. A laser diode heating and radiating structure comprises a laser diode, a radiator and a heating structure, and is characterized in that the heating structure comprises a heat-conducting substrate and a chip resistor arranged on the heat-conducting substrate, the radiator is provided with a diode mounting hole and a heating structure mounting hole which are communicated together, the laser diode is arranged in the diode mounting hole, the heat-conducting substrate is arranged in the heating structure mounting hole and is connected with the laser diode in a heat-conducting manner, the heat-conducting substrate is integrally formed with a heat-conducting sleeve which is arranged in the diode mounting hole in a penetrating manner, the laser diode is connected in the heat-conducting sleeve, when the temperature is above 25 ℃, the laser diode is connected with the diode mounting hole in a butting manner through the heat-conducting sleeve, and the linear expansion coefficient of the radiator is smaller than that of the heat-conducting sleeve, one end of the heat conduction sleeve and one end of the radiator are in sealing butt joint on the sealing plate, the other end of the heat conduction sleeve and the other end of the radiator are in sealing connection through the annular liquid storage bag, a sealing cavity is formed among the heat conduction sleeve, the sealing plate, the radiator and the annular liquid storage bag, and the sealing cavity is communicated with the annular liquid storage bag and can flow into the sealing cavity through heat insulation liquid in the annular liquid storage bag under the elastic contraction effect of gravity or the annular liquid storage bag.
2. The laser diode heat dissipation structure of claim 1, wherein a side of the thermally conductive substrate away from the laser diode is disconnected from a wall of the heating structure mounting hole.
3. The laser diode heat dissipation structure of claim 2, wherein the chip resistor is disposed on a side of the thermally conductive substrate away from the laser diode.
4. The laser diode heating and radiating structure according to claim 1, 2 or 3, wherein a surface of the heat sink is provided with a heat radiating fin, and the heating structure mounting hole is located on a side of the diode mounting hole close to the heat radiating fin.
5. The laser diode heat dissipation structure of claim 4, wherein the heat dissipation fins have at least two pieces, and the free ends of all the heat dissipation fins are located on the same cylindrical surface.
6. The laser diode heating and radiating structure of claim 1, 2 or 3, wherein the heat sink is provided with a heat sink mounting hole extending in a depth direction of the diode mounting hole, and a wall of the heat sink mounting hole is provided with a notch.
7. The laser diode heating and heat dissipating structure according to claim 1, 2 or 3, wherein the width of the opening of the portion of the diode mounting hole communicating with the heating structure mounting hole is less than a quarter of the circumference of the diode mounting hole.
8. The laser diode heat dissipation structure of claim 1, 2 or 3, wherein the laser diode is suspended in the diode mounting hole through the heat conductive substrate, the laser diode and the diode mounting hole are directly or indirectly abutted together at a temperature of 25 ℃ or higher, and a coefficient of linear expansion of the heat sink is smaller than a coefficient of linear expansion of the laser diode or a coefficient of linear expansion of a component that indirectly abuts the laser diode and the diode mounting hole.
CN201610954890.9A 2016-11-03 2016-11-03 Laser diode heating and radiating structure Active CN106567999B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610954890.9A CN106567999B (en) 2016-11-03 2016-11-03 Laser diode heating and radiating structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610954890.9A CN106567999B (en) 2016-11-03 2016-11-03 Laser diode heating and radiating structure

Publications (2)

Publication Number Publication Date
CN106567999A CN106567999A (en) 2017-04-19
CN106567999B true CN106567999B (en) 2020-05-26

Family

ID=58535286

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610954890.9A Active CN106567999B (en) 2016-11-03 2016-11-03 Laser diode heating and radiating structure

Country Status (1)

Country Link
CN (1) CN106567999B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110732458B (en) * 2019-09-24 2021-07-06 浙江凯耀照明有限责任公司 Automatic glue filling device for component of LED driver

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2231005Y (en) * 1995-04-27 1996-07-10 浙江大学 Metal vapour laser-tube heater
CN2737026Y (en) * 2004-05-31 2005-10-26 天津三星电子有限公司 A semiconductor laser diode radiator
CN104051099A (en) * 2014-06-27 2014-09-17 深圳市业展电子有限公司 Production method of high-power precision alloy SMD (surface mount device) resistor
CN204116999U (en) * 2014-10-08 2015-01-21 北京国科欣翼科技有限公司 Temperature control system of semiconductor laser
CN104485573A (en) * 2014-11-21 2015-04-01 湖北久之洋红外***股份有限公司 Laser diode array side pumping module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2231005Y (en) * 1995-04-27 1996-07-10 浙江大学 Metal vapour laser-tube heater
CN2737026Y (en) * 2004-05-31 2005-10-26 天津三星电子有限公司 A semiconductor laser diode radiator
CN104051099A (en) * 2014-06-27 2014-09-17 深圳市业展电子有限公司 Production method of high-power precision alloy SMD (surface mount device) resistor
CN204116999U (en) * 2014-10-08 2015-01-21 北京国科欣翼科技有限公司 Temperature control system of semiconductor laser
CN104485573A (en) * 2014-11-21 2015-04-01 湖北久之洋红外***股份有限公司 Laser diode array side pumping module

Also Published As

Publication number Publication date
CN106567999A (en) 2017-04-19

Similar Documents

Publication Publication Date Title
JP5011494B2 (en) Thermal conduction / dissipation unit integrated semiconductor light emitting device
CN1873973B (en) Envelope for luminous elements of semiconductor in large power
TW200823404A (en) Outdoor high power light-emitting diode illuminating equipment
US20100277901A1 (en) Airfield Lighting Device
CN102135248A (en) Liquid metal heat dissipation-based high-power LED (Light Emitting Diode) light source with threaded connection structure
US10578290B2 (en) LED spot lamp with double sides emitting light
CN101334155A (en) High radiation led lamp radiating module
KR101095033B1 (en) LED lamp package using thermoelectric element
CN201754049U (en) Hot pipe heat radiator and high power LED lamp with hot pipe heat radiator as heat radiating device
CN106567999B (en) Laser diode heating and radiating structure
CN202631938U (en) Laser light source and related projection system
CN202082649U (en) Liquid metal radiating based high-power LED (Light-emitting Diode) light source with thread connection structure
CN205191431U (en) LED modulated structure and car
KR101367628B1 (en) Manufacturing method of a cooling module for a lighting device
CN207716350U (en) A kind of automotive LED headlamp
CN204986521U (en) Light -emitting diode device
CN207364968U (en) Auto lamp
CN103388770A (en) Integrated light source radiating module of LED lamp and manufacturing method thereof
CN203797602U (en) Heat sink expansion structure assembly
CN202484956U (en) Heat tube heat radiator for large-power LED (Light-Emitting Diode) automobile headlamp
CN206708919U (en) LED car lamp
CN203521476U (en) LED packaging structure with high heat conduction performance
CN217684478U (en) Energy-saving LED lamp tube structure
CN218883769U (en) Lamp heat dissipation device, car lamp and vehicle
CN107940389A (en) LED light source component and its LED automobile lamp

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: 317200 eight industrial parks in Chicheng street, Tiantai County, Taizhou, Zhejiang

Applicant after: Tiantai Tianyu Au Optronics Co

Address before: 317200 eight industrial parks in Chicheng street, Tiantai County, Taizhou, Zhejiang

Applicant before: ZHEJIANG TIANYU LIGHTING CO., LTD.

GR01 Patent grant
GR01 Patent grant