CN106565219A - 一种大功率led用掺杂氟化镁的、可荧光陶瓷基座及其制备方法 - Google Patents

一种大功率led用掺杂氟化镁的、可荧光陶瓷基座及其制备方法 Download PDF

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CN106565219A
CN106565219A CN201610971776.7A CN201610971776A CN106565219A CN 106565219 A CN106565219 A CN 106565219A CN 201610971776 A CN201610971776 A CN 201610971776A CN 106565219 A CN106565219 A CN 106565219A
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ceramic base
afluon
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power led
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林琴
缪继平
周逢婷
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Anhui Zhong Wei Photoelectric Material Co Ltd
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Abstract

本发明公开了一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座及其制备方法，其特征在于，是由以下重量份的原料制成：氟化镁2‑3，CeO2 1‑2，Al2O3 30‑40，Y2O3 4‑7，莫来石1‑2，柠檬酸3‑6，乙二胺3‑5，去离子水15‑20，氧化锆1‑3，正硅酸乙酯2‑3，MgO1‑2，乙醇30‑40，硅微粉5‑10，硅烷偶联剂KH550 15‑20；本发明陶瓷底座具有优良的抗拉、抗压强度、耐磨性，并且导热系数大，具有可荧光的功能；配合添加的氟化镁等，可在提高材料增透效果的前提下,提高整个其抗划擦性。

Description

一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座及其制备 方法
技术领域
本发明涉及一种LED用的陶瓷基座，具体涉及一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座及其制备方法。
背景技术
透明陶瓷作为近年来迅速发展起来的一种新型光电功能材料，在热学、力学性能、光性能、复合结构以及规模化生产方面优势明显，透明陶瓷目前主要作为窗口材料，激光材料和闪烁材料得到应用：透明化的发光材料可以解决荧光粉对光的散射和吸收，提高发光效率；陶瓷不存在单晶的分凝系数问题，可以实现多种发光离子的高浓度均匀共掺，从而可以通过精确控制陶瓷片荧光体的透射率、发光波段等各种参数，调节和控制荧光体陶瓷片转换的黄光与未被转换的蓝光之间的比例，利用透明陶瓷自身的均匀性，获得均一高质量的白光，并可进行发光设计，开发新材料；透明陶瓷具有优异的机械和热力学性能，抗振动，导热性好，可解决蓝光LED持续点亮下温度升高造成的各种发光问题，进一步提高器件的发光稳定性和使用寿命。
石云在《Ce:Y3Al5O12透明陶瓷在白光 LED中的应用研究》中，利用CeO2、Al2O3 、Y2O3制备了一种透明陶瓷，但是还存在着导热系数欠佳、不具有荧光功能等问题。
发明内容
基于以上思考，本发明旨在提供一种导热系数大，并且具有荧光功能的大功率LED用陶瓷基座及其制备方法。
本发明所要解决的技术问题采用以下的技术方案来实现 ：
一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座，其特征在于，是由以下重量份的原料制成：
氟化镁2-3，CeO2 1-2，Al2O3 30-40，Y2O3 4-7，莫来石1-2，柠檬酸3-6，乙二胺3-5，去离子水15-20，氧化锆1-3，正硅酸乙酯2-3，MgO1-2，乙醇30-40，硅微粉5-10，硅烷偶联剂KH55015-20；
所述的一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座及其制备方法，其特征在于，是由以下步骤制成：
a. 以柠檬酸为碳源，加入乙二胺、去离子水，在150-250℃条件下放置3-7天，得到在紫外光激发下，具有蓝光发射、绿光发射及红光发射的液体状碳点荧光材料；
b. 将硅微粉、莫来石加入到步骤b所得液体中，再加入硅烷偶联剂KH550，超声分散10-30min后，浸泡3-5h，过滤、水洗、烘干，得到吸附碳点荧光材料的混合物；
c. 将CeO2，Al2O3，Y2O3、氟化镁、氧化锆和步骤a所得混合物加入球磨机中，并加入正硅酸乙酯、MgO、乙醇，经球磨混料8-15h后，将浆料置于温度为 80-120℃的干燥箱中充分干燥；
d. 将步骤c所得物过筛和冷等静压制成素坯，然后转入真空炉中 1650℃-1850℃温度下保温20h后，可获得透明试样，为消除真空烧结过程中可能引入的内应力和氧空位，将试样在1380-1500℃空气氛围中退火 15-25 h。
所述的一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座及其制备方法，其特征在于，步骤d所述的真空炉的真空度为（5-15）10-4Par。
本发明的有益效果是：硅烷偶联剂KH550处理过的硅微粉吸附性、分散性较好，浸泡于碳点荧光材料中后，可以吸附碳点荧光材料，从而赋予封装材料可荧光的特点，同时，其均匀分散在陶瓷基底中，避免了碳点荧光材料和LED芯片的直接接触，有效解决了由于LED 芯片发热而导致荧光材料衰减速率过高、失效过快的问题，进而提高了 LED 灯的使用寿命和综合品质；同时，硅微粉可使陶瓷底座的抗拉、抗压强度增强，耐磨性能提高，并能增大其导热系数，增加阻燃性能；配合添加的氟化镁等，可在提高材料增透效果的前提下, 提高整个其抗划擦性。
具体实施方式
下面结合实施例， 对本发明的具体实施方式作进一步描述。
实施例
一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座，其特征在于，是由以下重量份的原料制成：
氟化镁3，CeO2 2，Al2O3 40，Y2O3 7，莫来石2，柠檬酸6，乙二胺5，去离子水20，氧化锆3，正硅酸乙酯3，MgO2，乙醇40，硅微粉10，硅烷偶联剂KH550 20；
所述的一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座及其制备方法，其特征在于，是由以下步骤制成：
a. 以柠檬酸为碳源，加入乙二胺、去离子水，在150-250℃条件下放置3-7天，得到在紫外光激发下，具有蓝光发射、绿光发射及红光发射的液体状碳点荧光材料；
b. 将硅微粉、莫来石加入到步骤b所得液体中，再加入硅烷偶联剂KH550，超声分散10-30min后，浸泡3-5h，过滤、水洗、烘干，得到吸附碳点荧光材料的混合物；
c. 将CeO2，Al2O3，Y2O3、氟化镁、氧化锆和步骤a所得混合物加入球磨机中，并加入正硅酸乙酯、MgO、乙醇，经球磨混料8-15h后，将浆料置于温度为 80-120℃的干燥箱中充分干燥；
d. 将步骤c所得物过筛和冷等静压制成素坯，然后转入真空炉中 1650℃-1850℃温度下保温20h后，可获得透明试样，为消除真空烧结过程中可能引入的内应力和氧空位，将试样在1380-1500℃空气氛围中退火 15-25 h。
所述的一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座及其制备方法，其特征在于，步骤d所述的真空炉的真空度为（5-15）10-4Par。
本发明的技术参数为：热导率≥15 W/mK；光效大于等于130 lm/W。

Claims (3)

1.一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座，其特征在于，是由以下重量份的原料制成：
氟化镁2-3，CeO2 1-2，Al2O3 30-40，Y2O3 4-7，莫来石1-2，柠檬酸3-6，乙二胺3-5，去离子水15-20，氧化锆1-3，正硅酸乙酯2-3，MgO1-2，乙醇30-40，硅微粉5-10，硅烷偶联剂KH55015-20。
2.根据权利要求1所述的一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座及其制备方法，其特征在于，是由以下步骤制成：
a. 以柠檬酸为碳源，加入乙二胺、去离子水，在150-250℃条件下放置3-7天，得到在紫外光激发下，具有蓝光发射、绿光发射及红光发射的液体状碳点荧光材料；
b. 将硅微粉、莫来石加入到步骤b所得液体中，再加入硅烷偶联剂KH550，超声分散10-30min后，浸泡3-5h，过滤、水洗、烘干，得到吸附碳点荧光材料的混合物；
c. 将CeO2，Al2O3，Y2O3、氟化镁、氧化锆和步骤a所得混合物加入球磨机中，并加入正硅酸乙酯、MgO、乙醇，经球磨混料8-15h后，将浆料置于温度为 80-120℃的干燥箱中充分干燥；
d. 将步骤c所得物过筛和冷等静压制成素坯，然后转入真空炉中 1650℃-1850℃温度下保温20h后，可获得透明试样，为消除真空烧结过程中可能引入的内应力和氧空位，将试样在1380-1500℃空气氛围中退火 15-25 h。
3.根据权利要求2所述的一种大功率LED用掺杂氟化镁的、可荧光陶瓷基座及其制备方法，其特征在于，步骤d所述的真空炉的真空度为（5-15）10-4Par。
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