CN106531639B - 半导体装置的制造方法及半导体装置 - Google Patents
半导体装置的制造方法及半导体装置 Download PDFInfo
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- CN106531639B CN106531639B CN201610236042.4A CN201610236042A CN106531639B CN 106531639 B CN106531639 B CN 106531639B CN 201610236042 A CN201610236042 A CN 201610236042A CN 106531639 B CN106531639 B CN 106531639B
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
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JP2015179997A JP6397806B2 (ja) | 2015-09-11 | 2015-09-11 | 半導体装置の製造方法および半導体装置 |
JP2015-179997 | 2015-09-11 |
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US (1) | US10115674B2 (zh) |
JP (1) | JP6397806B2 (zh) |
CN (1) | CN106531639B (zh) |
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Citations (3)
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US6811662B1 (en) * | 2003-08-22 | 2004-11-02 | Powership Semiconductor Corp. | Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof |
CN104073769A (zh) * | 2013-03-28 | 2014-10-01 | 大日本网屏制造株式会社 | 膜形成方法 |
CN104716105A (zh) * | 2013-12-13 | 2015-06-17 | 株式会社东芝 | 半导体装置及其制造方法 |
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JPH09213829A (ja) | 1995-06-06 | 1997-08-15 | Circuit Components Inc | Bga型i/oフォーマットを使用した高性能デジタルicパッケージ及びバイメタル充填バイア技術による単層セラミックス基板 |
JP3194185B2 (ja) * | 1997-10-13 | 2001-07-30 | 株式会社エツミ光学 | 電磁波シールド成形品 |
JP3698408B2 (ja) * | 2000-08-11 | 2005-09-21 | 三井金属鉱業株式会社 | カソード電極材及びそのカソード電極材を用いた電解銅箔製造用の回転陰極ドラム |
JP4020874B2 (ja) * | 2003-03-13 | 2007-12-12 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
US20090002969A1 (en) | 2007-06-27 | 2009-01-01 | Rf Micro Devices, Inc. | Field barrier structures within a conformal shield |
EP2010690B1 (de) * | 2006-04-26 | 2010-02-24 | ThyssenKrupp Steel Europe AG | Verfahren zum schmelztauchbeschichten eines stahlflachproduktes aus höherfestem stahl |
JP2007311540A (ja) * | 2006-05-18 | 2007-11-29 | Renesas Technology Corp | 半導体装置の製造方法 |
DE102012112109B4 (de) * | 2012-12-11 | 2016-03-24 | Thyssenkrupp Steel Europe Ag | Oberflächenveredeltes Stahlblech und Verfahren zu dessen Herstellung |
JP5779227B2 (ja) | 2013-03-22 | 2015-09-16 | 株式会社東芝 | 半導体装置の製造方法 |
JP5877814B2 (ja) * | 2013-05-07 | 2016-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5497949B1 (ja) * | 2013-07-03 | 2014-05-21 | Jx日鉱日石金属株式会社 | 電磁波シールド用金属箔、電磁波シールド材及びシールドケーブル |
JP5684349B1 (ja) | 2013-09-10 | 2015-03-11 | 株式会社東芝 | 半導体装置および半導体装置の検査方法 |
JP6219155B2 (ja) * | 2013-12-13 | 2017-10-25 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
CN207800582U (zh) | 2015-06-19 | 2018-08-31 | 株式会社村田制作所 | 模块 |
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- 2015-09-11 JP JP2015179997A patent/JP6397806B2/ja active Active
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- 2016-03-01 TW TW105106190A patent/TWI628776B/zh active
- 2016-04-15 CN CN201610236042.4A patent/CN106531639B/zh active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6811662B1 (en) * | 2003-08-22 | 2004-11-02 | Powership Semiconductor Corp. | Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof |
CN104073769A (zh) * | 2013-03-28 | 2014-10-01 | 大日本网屏制造株式会社 | 膜形成方法 |
CN104716105A (zh) * | 2013-12-13 | 2015-06-17 | 株式会社东芝 | 半导体装置及其制造方法 |
JP2015115552A (ja) * | 2013-12-13 | 2015-06-22 | 株式会社東芝 | 半導体装置およびその製造方法 |
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TW201711160A (zh) | 2017-03-16 |
US10115674B2 (en) | 2018-10-30 |
JP2017055070A (ja) | 2017-03-16 |
US20170077040A1 (en) | 2017-03-16 |
TWI628776B (zh) | 2018-07-01 |
CN106531639A (zh) | 2017-03-22 |
JP6397806B2 (ja) | 2018-09-26 |
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