CN106487348A - Crystal resonator - Google Patents
Crystal resonator Download PDFInfo
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- CN106487348A CN106487348A CN201611263967.4A CN201611263967A CN106487348A CN 106487348 A CN106487348 A CN 106487348A CN 201611263967 A CN201611263967 A CN 201611263967A CN 106487348 A CN106487348 A CN 106487348A
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- 239000013078 crystal Substances 0.000 title claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 235000014676 Phragmites communis Nutrition 0.000 claims abstract description 36
- 239000010453 quartz Substances 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 8
- 244000273256 Phragmites communis Species 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 229920000298 Cellophane Polymers 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000003466 welding Methods 0.000 abstract description 10
- 238000012797 qualification Methods 0.000 abstract description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract description 6
- 244000089486 Phragmites australis subsp australis Species 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 24
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000021615 conjugation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 238000010923 batch production Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 239000011435 rock Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The embodiment of the present invention provides a kind of crystal resonator, is related to electronic devices and components field.This crystal resonator includes substrate, quartz wafer, two reeds and two terminal pins, substrate is provided with two through holes, and two through hole interval settings, every terminal pin is each passed through a through hole, and every terminal pin passes through the part of through hole to form gap with the surrounding of a through hole, and every terminal pin passes through the part of through hole to be provided with decorative pattern.The reliability of this crystal resonator is high, decrease because the pedestal of crystal resonator is in the gas leakage producing process of flattening, weld tabs welding process, quartz crystal produce the sub- easy damaged of glass that press seal process produces because external force affects and produce, qualification rate improves, and saves production cost.
Description
Technical field
The present invention relates to electronic devices and components field, in particular to a kind of crystal resonator.
Background technology
Crystal resonator just refers to the crystal resonator made with quartz material, is commonly called as crystal oscillator, acts the effect producing frequency,
There is stable, the good feature of interference free performance, be widely used in various electronic products.At present, crystal resonator has become
For the vitals of currently digital information-intensive society, it is widely used in the communications field, electronic device field, specifically, is widely used in
Need in frequency stabilization and various kinds of equipment, instrument and the electronic product of frequency-selecting, for crucial unit indispensable in current electronic product
The market demand of part, therefore quartz resonator is very high.
Crystal resonator of the prior art pedestal is packaged or crystal resonator use engineering in, this crystalline substance
Body resonator specifically following shortcoming：1st, the conjugation defective tightness between terminal pin and insulating barrier, easy gas leakage, thus directly lead
Cause the poor reliability of crystal resonator, degree of accuracy is low or even can not use；2nd, it is connected not firm, appearance between terminal pin and insulating barrier
Easily loosening, and the pedestal in crystal resonator flattens process, weld tabs welding process, quartz crystal production press seal process in production
The sub- easy damaged of glass that produced due to external force impact and in the venting process that produces, due to substrate and terminal pin all can be subject to outer
The effect of power, thus be likely to lead to junction between terminal pin and insulating barrier easy " injured ", thus indirectly leading to crystal
The poor reliability of resonator, degree of accuracy are low；3rd, further, during the crystal resonator of batch production said structure, crystal resonant
The qualification rate of device is low, for underproof product nor recycling, causes the waste of production material.
Content of the invention
In view of this, the purpose of the embodiment of the present invention is to provide a kind of crystal resonator, to improve above-mentioned problem.
A kind of crystal resonator provided in an embodiment of the present invention, described crystal resonator include substrate, quartz wafer, two
Reed and two terminal pins, described substrate is provided with two through holes, and described two through hole interval setting, every described lead
Foot is each passed through a described through hole, and every described terminal pin passes through the part of described through hole and the surrounding of a described through hole
Form gap, and every described terminal pin passes through the part of described through hole to be provided with decorative pattern, in each described gap, all sintering is filled out
It is filled with insulating barrier, each described terminal pin passes through one end of described through hole to be provided with a described reed, described quartz wafer position
In the side of described substrate, the two ends of described quartz wafer are connected with a described reed respectively.
Further, described decorative pattern be shaped as spiral type or linear or annular.
Further, described substrate is provided with support member relative to the opposite side of quartz wafer, and described support member is located at two
Between terminal pin.
Further, described support member is two metal derbies or two cellophane blocks, described two cellophane blocks or two
Metal derby is located at described substrate both sides in the direction of the width respectively.
Further, the height of each described support member is 0.3mm～0.5mm, and the length of each described support member is not
Exceed described substrate width 1/2nd.
Further, the spacing between described two terminal pins is 2.40mm～2.60mm.
Further, a diameter of 0.2mm～1.0mm of every described terminal pin, the length of every described terminal pin is
3.0mm～13.2mm.
Further, the outside spacing of two described reeds is 3.5mm～4.5mm, the inner side spacing of two described reeds
For 0.5mm～1mm.
Further, the size of described substrate length be respectively 6.3mm～7.2mm, 3.2mm～3.8mm and
0.5mm～0.9mm.
Further, described crystal resonator also includes shell, and described casing cover is located at the side of described substrate, described stone
Outside English chip and two described reeds, the size of the length of described shell be respectively 6.3mm～7.2mm, 0.8mm～
1.5mm and 0.12mm～0.18mm.
Compared with prior art, a kind of crystal resonator that the present invention provides, draws insulating barrier sintering is filled in every
When between the gap between stitch and a through hole, due to passing through the part of through hole to be provided with decorative pattern in every described terminal pin,
Conjugation therefore between insulating barrier and terminal pin is even closer, will not gas leakage so that encapsulation crystal resonator
Reliability is high, degree of accuracy is high；And the connection between insulating barrier and terminal pin is more firm, it is difficult to loosen, reduces crystal
The pedestal of resonator production flatten process, weld tabs welding process, quartz crystal produce press seal process due to external force affect and produce
The raw sub- easy damaged of glass and the gas leakage that produces, thus indirectly improve reliability and the degree of accuracy of crystal resonator；Further
Ground, during the crystal resonator of batch production said structure, the qualification rate of crystal resonator is high, saves production cost.
For enabling the above objects, features and advantages of the present invention to become apparent, preferred embodiment cited below particularly, and coordinate
Appended accompanying drawing, is described in detail below.
Brief description
Purpose, technical scheme and advantage for making the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described it is clear that described embodiment is
The a part of embodiment of the present invention, rather than whole embodiments.The present invention generally described and illustrated in accompanying drawing herein is implemented
The assembly of example can be arranged with various different configurations and design.Therefore, the reality to the present invention providing in the accompanying drawings below
The detailed description applying example is not intended to limit the scope of claimed invention, but is merely representative of the selected enforcement of the present invention
Example.Based on the embodiment in the present invention, those of ordinary skill in the art are obtained under the premise of not making creative work
Every other embodiment, broadly falls into the scope of protection of the invention.
The schematic appearance of the crystal resonator that Fig. 1 provides for present pre-ferred embodiments；
The crystal resonator that Fig. 2 provides for present pre-ferred embodiments is in the structural representation at the first visual angle；
The crystal resonator that Fig. 3 provides for present pre-ferred embodiments is in the profile at the first visual angle；
Fig. 4 is the close-up schematic view in A portion in Fig. 3.
The structural representation of the terminal pin that Fig. 5 provides for present pre-ferred embodiments.
The crystal resonator (without shell, quartz wafer) that Fig. 6 provides for present pre-ferred embodiments is in the second visual angle
Structural representation；
The crystal resonator (without shell, quartz wafer) that Fig. 7 provides for present pre-ferred embodiments is in the 3rd visual angle
Structural representation；
The terminal pin of the crystal resonator that Fig. 8 provides for present pre-ferred embodiments is in structural representation during case of bending
Figure.
Icon：101- substrate；102- quartz wafer；103- reed；104- terminal pin；105- insulating barrier；106- support member；
107- shell；108- decorative pattern.
Specific embodiment
Below in conjunction with accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Generally exist
The assembly of the embodiment of the present invention described and illustrated in accompanying drawing can be arranged with various different configurations and design herein.Cause
This, be not intended to limit claimed invention to the detailed description of the embodiments of the invention providing in the accompanying drawings below
Scope, but it is merely representative of the selected embodiment of the present invention.Based on embodiments of the invention, those skilled in the art are not doing
The every other embodiment being obtained on the premise of going out creative work, broadly falls into the scope of protection of the invention.
It should be noted that：Similar label and letter represent similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined in individual accompanying drawing, then do not need it to be defined further and explains in subsequent accompanying drawing.Meanwhile, the present invention's
In description, term " first ", " second " etc. are only used for distinguishing description, and it is not intended that indicating or hint relative importance.
Crystal resonator just refers to the crystal resonator made with quartz material, is commonly called as crystal oscillator, acts the effect producing frequency,
There is stable, the good feature of interference free performance, be widely used in various electronic products.At present, crystal resonator has become
For the vitals of currently digital information-intensive society, it is widely used in the communications field, electronic device field, specifically, is widely used in
Need in frequency stabilization and various kinds of equipment, instrument and the electronic product of frequency-selecting, for crucial unit indispensable in current electronic product
The market demand of part, therefore quartz resonator is very high.
Crystal resonator of the prior art pedestal is packaged or crystal resonator use engineering in, this crystalline substance
Body resonator specifically following shortcoming：1st, the conjugation defective tightness between terminal pin and insulating barrier, easy gas leakage, thus directly lead
Cause the poor reliability of crystal resonator, degree of accuracy is low or even can not use；2nd, it is connected not firm, appearance between terminal pin and insulating barrier
Easily loosening, and the pedestal of crystal resonator production flatten process, weld tabs welding process, quartz crystal produce press seal process by
The sub- easy damaged of glass that produces in external force impact and the gas leakage that produces, thus indirectly lead to the poor reliability of crystal resonator,
Degree of accuracy is low；3rd, further, during the crystal resonator of batch production said structure, the qualification rate of crystal resonator is low, for
Underproof product nor recycling, cause the waste of production material.
In view of this, inventor observes and research discovery through long-term, there is provided a kind of crystal resonator, described crystal is humorous
The device that shakes includes substrate, quartz wafer, two reeds and two terminal pins, and substrate is provided with two through holes, and between two through holes
Every setting, every terminal pin is each passed through a through hole, and every terminal pin passes through the part of through hole and the surrounding of a through hole
Form gap, and every terminal pin passes through the part of through hole to be provided with decorative pattern.The reliability of this crystal resonator is high, degree of accuracy is high
Qualification rate high, save production cost.
Below by specific embodiment and combine accompanying drawing the present invention is described in further detail.
Refer to Fig. 1, Fig. 2, a kind of crystal resonator provided in an embodiment of the present invention, this crystal resonator includes shell
107th, substrate 101,102, two reeds 103 of quartz wafer and two terminal pins 104.In the present embodiment, the length of substrate 101,
Wide, high size is respectively 6.3mm～7.2mm, 3.2mm～3.8mm and 0.5mm～0.9mm.In the specific implementation, substrate
Depending on the length of 101 size, width, height can be according to actual demands, for example, the size of the length of substrate 101 is respectively
6.3mm、3.8mm、0.5mm；Or, the size of the length of substrate 101 is respectively 7.3mm, 3.2mm, 0.9mm；Again for example,
The size of the length of substrate 101 can also be respectively 6.7mm, 3.7mm, 0.7mm, in the present embodiment, it is preferred to use
The size of 6.7mm, 3.7mm, 0.7mm.
As shown in figure 3, substrate 101 is provided with two through holes, and two through hole interval settings, every terminal pin 104 is respectively
Through a through hole.Wherein, the spacing between two terminal pins 104 is 2.40mm～2.60mm；In the specific implementation, two are drawn
Depending on spacing between stitch 104 can be according to actual demand, for example, it is possible to be 2.40mm, 2.55mm, 2.60mm etc., as long as
In the range of 2.40mm～2.60mm.Further, a diameter of 0.2mm～1.0mm of every terminal pin 104, every is drawn
The length of stitch 104 is 3.0mm～13.2mm.In the specific implementation, the diameter of every terminal pin 104 can be according to actual demand
Fixed, for example, it is possible to be 0.2mm, 0.5mm, 1.0mm etc., as long as in the range of 0.2mm～1.0mm；Every terminal pin
Depending on 104 length can be according to actual demand, for example, it is possible to be 3.0mm, 8.0mm, 13.2mm etc., as long as 3.0mm～
In the range of 13.2mm.It should be noted that the height of substrate 101 is set to 0.5mm～0.9mm, crystal resonator
Frequency, resistance characteristic are still controlled, and frequency scattered error is less than 10ppm.
As shown in figure 3, every terminal pin 104 passes through the part of through hole to form gap with the surrounding of a through hole, each
In gap, all sintering is filled with insulating barrier 105.In the present embodiment, the insulating barrier 105 all sintering filling in each gap is cellophane
Layer, of course, the insulating barrier 105 all sintering filling in each gap can be not only cellophane layer, it would however also be possible to employ other
Insulating barrier 105 here be not limited.In the present embodiment, each through hole is circular hole, and the diameter of each insulating barrier 105 is
1.1mm, the height of each insulating barrier 105 is 0.5mm.Of course, in the present embodiment, the shape of through hole can also be pros
The shapes such as shape, regular hexagon, octagon, here is simultaneously seldom limited, and certainly, the shape of through hole is using circular optimal.
As shown in Figure 4, Figure 5 it is emphasized that, and every terminal pin 104 passes through the part of through hole to be provided with decorative pattern
108, the shape of decorative pattern 108 can adopt spiral type or linear or annular or even irregular shape, and here is not limited.When
When insulating barrier 105 is sintered in the gap between terminal pin 104 and through hole, the shape of the joint portion of insulating barrier 105 and terminal pin 104
Match each other with the shape of the part that terminal pin 104 is located across through hole, because the part that terminal pin 104 passes through through hole is provided with
Decorative pattern 108, the therefore conjugation between insulating barrier 105 and terminal pin 104 are even closer, will not gas leakage, insulating barrier 105 and lead
Connection between foot 104 is also more firm, is difficult to loosen.
As shown in figure 3, each terminal pin 104 is provided with a reed 103, wherein, each lead near one end of through hole
Foot 104 is connected with a reed 103 near one end of through hole by the way of spot welding, and each reed 103 is used for and quartz wafer
The step of 102 connections and the angle of horizontal plane are 6～8 degree.For example, in the specific implementation, each reed 103 is used for and quartz-crystal
The step that piece 102 connects is 6～8 degree with the angle of horizontal plane.For 6 degree, 7 degree, 8 degree.Further, two reeds 103
Outside spacing be 3.5mm～4.5mm, the inner side spacing of two reeds 103 is 0.5mm～1mm.In the specific implementation, two
Depending on the outside spacing of reed 103 can be according to actual demand, for example, it is possible to be 3.5mm, 4mm, 4.5mm etc., as long as
In the range of 3.5mm～4.5mm.In the specific implementation, the inner side spacing of two reeds 103 also can be according to actual demand
Fixed, for example, it is possible to be 0.5mm, 0.8mm, 1mm, as long as in the range of 0.5mm～1mm.
Further, as shown in Fig. 3, Fig. 6, each reed 103 is pancake tortuous stepped, each reed
103 width is 0.4mm～1.2mm, and wherein, the number of steps that each reed 103 includes is 1～6, and the width of each step is
0.3mm～20mm, the height of each step is 0.2mm～1.5mm.In the specific implementation, the width of each reed 103 can foundation
Depending on actual demand, for example, it is possible to be 0.4mm, 0.8mm, 1.2mm etc., as long as in the range of 0.4mm～1.2mm.?
When being embodied as, depending on number of steps that each reed 103 includes also can be according to actual demand, for example, it is possible to for 1,3,6
Individual, as long as within the scope of 1～6.In the specific implementation, depending on the width of each step can be according to actual demand, for example,
Can be 0.3mm, 10mm, 20mm etc., as long as in the range of 0.3mm～20mm.In the specific implementation, each step
Depending on height can be according to actual demand, for example, it is possible to be 0.2mm, 1mm, 1.5mm etc., as long as in 0.2mm～1.5mm scope
Inside.
Shell 107 is covered on outside the side of substrate 101, quartz wafer 102 and two reeds 103, shell 107 and substrate
101 are encapsulated using electric resistance welding press seal mode.In the present embodiment, the size of the length of shell 107 be respectively 6.3mm～
7.2mm, 0.8mm～1.5mm and 0.12mm～0.18mm.In the specific implementation, the length of the size of shell 107, width, Gao Ke
According to depending on actual demand, for example, the size of the length of the size of shell 107 is respectively 6.3mm, 0.8mm, 0.12mm；
Or, the size of the length of the size of shell 107 is respectively 7.2mm, 1.5mm, 0.18mm；Again for example, the chi of shell 107
The size of very little length can also be respectively 6.7mm, 1mm, 0.16mm, in the present embodiment, it is preferred to use 6.7mm,
The size of the shell 107 of 1mm, 0.16mm.
Quartz wafer 102 is located at the side of substrate, and the two ends of quartz wafer 102 are connected with a reed 103 respectively, and stone
The two ends of English chip 102 are placed on a reed 103 respectively.The side of substrate 101 quartz wafer 102 relatively is provided with support
Part 106.The height of each support member 106 is 0.3mm～0.5mm.Specifically, the height of support member 106 is 0.3mm～0.5mm,
In the specific implementation, depending on the height of support member 106 can be according to actual demand, for example, it is possible to be 0.3mm, 0.45mm, 0.5mm,
As long as in the range of 0.3mm～0.5mm.
In the present embodiment, support member 106 can be using when two cellophane blocks or two metal derbies or metal wire or insulation board.
When support member 106 adopts two cellophane blocks or two metal derbies, as shown in Figure 1, Figure 7 shows, support member 106 is located at two terminal pins
Between 104, and two two cellophane blocks or two metal derbies are located at substrate 101 both sides in the direction of the width respectively, and often
/ 2nd of the width of of length no more than substrate 101 of individual cellophane block or two metal derbies.In the present embodiment, two glass
The line of paper block or two metal derbies is parallel with the width of substrate 101, and so setting not only can make this crystal resonant
The internal structure of device is regular, when the stability of crystal resonator is invariant, the company of two cellophane blocks or two metal derbies
Line material saving parallel with the width of substrate 101.
In the present embodiment, when support member 106 adopts metal wire, a diameter of 0.3mm～0.5mm of metal wire 106, and gold
Belong to the width of of length no more than substrate 101 of line 106.In the specific implementation, the diameter of metal wire 106 can be according to actual demand
Fixed, for example, it is possible to be 0.3mm, 0.45mm, 0.5mm, as long as in the range of 0.3mm～0.5mm.When support member 106 adopts
During insulation board, insulation board is sheathed on outside two terminal pins 104, and the side laminating of quartz wafer 102 relative with substrate 101.
Wherein, the two ends of quartz wafer 102 are connected with reed 103 by conducting resinl respectively.Quartz wafer 102 is generally by stone
English melting is simultaneously cut to grind and is formed, and up to more than 99.99%, hardness is seven grades of Mohs to its dioxide-containing silica, have high temperature resistant,
Thermal coefficient of expansion is low, resistance to heat shocks and electrical insulation capability good the features such as.By the two ends of quartz wafer 102 respectively with a spring
Piece 103 connects, thus two terminal pins 104 are electrically connected.Quartz wafer 102 selects 4 × 1.8mm quartz wafer 102, frequency model
Enclose from 10MHZ～50MHZ；Overtone frequency scope is from 30MHZ～125MHZ.
In the present embodiment, the processing technique of this crystal resonator is：
The first step, goes out the terminal pin 104 of substrate 101 and patterned 108 using different Mold Makings；
Second step, by two terminal pins 104, insulating barrier 105 and substrate 101 sinter molding, and does the process of nickel plating hydrogen stannum；
3rd step, each terminal pin 104 each terminal pin 104 near through hole one end spot welding reed 103；
4th step, support member 106 is welded in the part that substrate 101 is located between two terminal pins 104；
5th step, quartz wafer 102 is connected to reed 103 with conducting resinl；
6th step, enters line frequency adjustment；
7th step, shell 107 is encapsulated by the mode for electric resistance welding with substrate 101, thus making quartz-crystal resonator.
In sum, between the gap that insulating barrier 105 sintering is filled between every terminal pin 104 and a through hole
When, due to passing through the part of through hole to be provided with decorative pattern 108 in every terminal pin 104, therefore insulating barrier 105 and terminal pin 104 it
Between conjugation even closer, will not gas leakage so that the reliability of the crystal resonator of encapsulation is high, degree of accuracy is high；
And the connection between insulating barrier 105 and terminal pin 104 is more firm, it is difficult to loosen, and reduce the base of crystal resonator
Seat is producing glass of process of flattening, weld tabs welding process, quartz crystal production press seal process generation because external force affects
Easy damaged and the gas leakage that produces, thus indirectly improve reliability and the degree of accuracy of crystal resonator；Further, produce in batches
During the crystal resonator of said structure, the qualification rate of crystal resonator is high, saves production cost.
Furthermore, the part being located between two terminal pins 104 in the substrate 101 of crystal resonator is welded with support member 106.
As shown in figure 8, when needing for this crystal resonator to be installed on wiring board, by two terminal pins 104 respectively to both sides bending, and
The height of every terminal pin 104 dogleg section is equal with the height of support member 106, and due to every terminal pin 104 dogleg section
Height equal with the height of support member 106, therefore when crystal resonator is installed on wiring board, support member 106 can be to base
Piece 101 plays the effect of support, thus it is also possible that this crystal resonator is installed stable, being difficult to rock it is ensured that crystal resonant
The stability of device and the accuracy of frequency, without fitting insulating panels, material-saving, reduce further production cost.
Through inventor's test, this crystal resonator improves with respect to prior art, the generation qualification rate of crystal resonator
25%, if being produced in batches on a large scale, its material saved and economic benefit are considerable, furthermore, by crystal resonant
Setting according to above-mentioned size of each element of device, shortens the spacing between two reeds 103, and two terminal pins
Spacing between 104, so that the contraction in length of substrate 101, improves the intensity of substrate 101, thus it is humorous to avoid crystal
Shake device after substrate 101 height reduction, frequency and resistance affected by force after electric resistance welding change greatly it is impossible to ensure electric parameter
Problem, be simultaneously achieved the miniaturization of crystal resonator, thus further saving material and production cost, structure of the present invention
Think ingenious, easy to implement and promote, practicality is very strong.
In describing the invention in addition it is also necessary to explanation, unless otherwise clearly defined and limited, term " setting ",
" installation ", " being connected ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or one
Body ground connects；Can be to be mechanically connected or electrically connect；Can be joined directly together it is also possible to by intermediary indirect
It is connected, can be the connection of two element internals.For the ordinary skill in the art, can be with concrete condition understanding
State term concrete meaning in the present invention.
It should be noted that：Similar label and letter represent similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined in individual accompanying drawing, then do not need it to be defined further and explains in subsequent accompanying drawing.
In describing the invention, it should be noted that term " " center ", " on ", D score, "left", "right", " vertical ",
The orientation of instruction such as " level ", " interior ", " outward " or position relationship are based on orientation shown in the drawings or position relationship, or should
Orientation or position relationship that invention product is usually put when using, are for only for ease of the description present invention and simplify description, and not
It is instruction or the hint device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore not
It is understood that as limitation of the present invention.Additionally, term " first ", " second ", " the 3rd " etc. are only used for distinguishing description, and can not manage
Solve as indicating or implying relative importance.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.It should be noted that：Similar label and letter exist
Representing similar terms in figure below, therefore, once being defined in a certain Xiang Yi accompanying drawing, being then not required in subsequent accompanying drawing
It is defined further and to be explained.
The above, the only specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, and any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, all should contain
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should described be defined by scope of the claims.
Claims (10)
1. a kind of crystal resonator it is characterised in that described crystal resonator include substrate, quartz wafer, two reeds and
Two terminal pins, described substrate is provided with two through holes, and described two through hole interval setting, and every described terminal pin is worn respectively
Cross a described through hole, and every described terminal pin passes through between the part of described through hole and the surrounding formation of a described through hole
Gap, and every described terminal pin passes through the part of described through hole to be provided with decorative pattern, in each described gap, all sintering is filled with absolutely
Edge layer, each described terminal pin passes through one end of described through hole to be provided with a described reed, and described quartz wafer is located at described
The side of substrate, the two ends of described quartz wafer are connected with a described reed respectively.
2. crystal resonator according to claim 1 it is characterised in that described decorative pattern be shaped as spiral type or linear
Or annular.
3. crystal resonator according to claim 1 is it is characterised in that described substrate sets relative to the opposite side of quartz wafer
It is equipped with support member, described support member is located between two terminal pins.
4. crystal resonator according to claim 3 is it is characterised in that described support member is two metal derbies or two glass
Glass paper block, described two cellophane blocks or two metal derbies are located at described substrate both sides in the direction of the width respectively.
5. according to the arbitrary described crystal resonator of claim 3～5 it is characterised in that the height of each described support member is
0.3mm～0.5mm, and 1/2nd of the width of of length no more than described substrate of each described support member.
6. crystal resonator according to claim 1 is it is characterised in that the spacing between described two terminal pins is
2.40mm～2.60mm.
7. crystal resonator according to claim 1 it is characterised in that every described terminal pin a diameter of 0.2mm～
1.0mm, the length of every described terminal pin is 3.0mm～13.2mm.
8. crystal resonator according to claim 1 is it is characterised in that the outside spacing of two described reeds is 3.5mm
～4.5mm, the inner side spacing of two described reeds is 0.5mm～1mm.
9. crystal resonator according to claim 1 is it is characterised in that the size of described substrate length is respectively
6.3mm～7.2mm, 3.2mm～3.8mm and 0.5mm～0.9mm.
10. crystal resonator according to claim 1 is it is characterised in that described crystal resonator also includes shell, described
Casing cover outside the side of described substrate, described quartz wafer and two described reeds, the length of described shell
Size is respectively 6.3mm～7.2mm, 0.8mm～1.5mm and 0.12mm～0.18mm.
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| CN201611263967.4A CN106487348A (en) | 2016-12-30 | 2016-12-30 | Crystal resonator |
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| CN201611263967.4A CN106487348A (en) | 2016-12-30 | 2016-12-30 | Crystal resonator |
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Cited By (1)
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| CN108649919A (en) * | 2018-07-31 | 2018-10-12 | 苏州市利明电子有限公司 | A kind of efficiently fixed tuning fork crystal resonator |
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Application publication date: 20170308 |