CN109004074A - LED epitaxial structure and preparation method thereof - Google Patents

LED epitaxial structure and preparation method thereof Download PDF

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Publication number
CN109004074A
CN109004074A CN201810904544.9A CN201810904544A CN109004074A CN 109004074 A CN109004074 A CN 109004074A CN 201810904544 A CN201810904544 A CN 201810904544A CN 109004074 A CN109004074 A CN 109004074A
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layer
aln
layers
quantum well
thickness
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冯猛
刘恒山
康双双
陈立人
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FOCUS LIGHTINGS TECHNOLOGY Co Ltd
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FOCUS LIGHTINGS TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials

Abstract

Present invention discloses a kind of LED epitaxial structure and preparation method thereof, the LED epitaxial structure is from bottom to top successively including substrate, AlN buffer layer, uGaN layers, N-type GaN layer, multi-quantum well luminescence layer, AlInGaN/AlN superlattices diffusion barrier layer, p-type hole injection layer and p-type GaN layer.The present invention introduces AlInGaN/AlN superlattices diffusion barrier layer between multi-quantum well luminescence layer and p-type hole injection layer, it can stop p-type doping diffusion, conduction level caused by band curvature is reduced to decline, Quantum Well non-radiative recombination is reduced, promotes the effect of Quantum Well internal quantum efficiency to improve luminous efficiency.

Description

LED epitaxial structure and preparation method thereof
Technical field
The present invention relates to technical field of semiconductor luminescence more particularly to a kind of LED epitaxial structure and preparation method thereof.
Background technique
Light emitting diode (Light-Emitting Diode, LED) is as a kind of novel energy-conserving, environmentally friendly solid-state lighting light Source has many advantages, such as that high efficiency, small in size, light-weight, fast response time and service life are long, has obtained it extensively in many fields General application, such as solid light source, large screen display, automobile tail light, traffic lights.In the numerous applications of LED, as general Logical lighting source is that it is one most promising.The key problem of LED illumination first is that improve LED reliability, such as cannot Realize that the LED light source of high reliability also will limit it in the application of every field even if light efficiency is good again.Therefore, enhancing LED can It is the research emphasis of LED by property.
In the prior art, the followed by direct growing P-type hole injection layer that LED structure has been grown in multi-quantum well luminescence layer And p-type GaN layer, wherein the p-types doped chemical such as Mg, Zn in p-type hole injection layer and p-type GaN layer is easy because of High temperature diffusion extremely Multi-quantum well luminescence layer, and then non-radiative recombination center is generated, so that LED luminous efficiency declines.
Summary of the invention
The purpose of the present invention is to provide a kind of LED epitaxial structures and preparation method thereof.
One of for achieving the above object, an embodiment of the present invention provides a kind of LED epitaxial structure, outside the LED Prolong structure successively includes substrate, AlN buffer layer, uGaN layers, N-type GaN layer, multi-quantum well luminescence layer, AlInGaN/ from bottom to top AlN superlattices diffusion barrier layer, p-type hole injection layer and p-type GaN layer.
As the further improvement of an embodiment of the present invention, the AlInGaN/AlN superlattices diffusion barrier layer includes The Al that several periods stackxInyGa(1-x-y)N layers and AlN layers, wherein the value range that the value range of x is 0~0.5, y is 0 ~0.3.
As the further improvement of an embodiment of the present invention, the AlInGaN/AlN superlattices diffusion barrier layer includes 3 The Al that~8 periods stackxInyGa(1-x-y)N layers and AlN layers, wherein the AlxInyGa(1-x-y)N layers of thickness range be 1~ 5nm, AlN layers of the thickness range are 0.1~5nm.
As the further improvement of an embodiment of the present invention, in each cycle, the AlxInyGa(1-x-y)N layers and institute Stating AlN layers has first thickness, and several first thickness in several periods are unequal.
As the further improvement of an embodiment of the present invention, the value of x, y in several periods are unequal.
One of for achieving the above object, an embodiment of the present invention provides a kind of preparation method of LED epitaxial structure, Comprising steps of
One substrate is provided；
Growing AIN buffer layer over the substrate；
UGaN layers are grown on the AlN buffer layer；
N-type GaN layer is grown on the uGaN layer；
Multi-quantum well luminescence layer is grown in the N-type GaN layer；
AlInGaN/AlN superlattices diffusion barrier layer is grown in the multi-quantum well luminescence layer；
The growing P-type hole injection layer on the AlInGaN/AlN superlattices diffusion barrier layer；
The growth P-type GaN layer on the p-type hole injection layer.
As the further improvement of an embodiment of the present invention, step " is grown in the multi-quantum well luminescence layer AlInGaN/AlN superlattices diffusion barrier layer " specifically includes:
The Al of several periods stackings is grown in the multi-quantum well luminescence layerxInyGa(1-x-y)N layers and AlN layers, wherein x Value range be 0~0.5, y value range be 0~0.3.
As the further improvement of an embodiment of the present invention, step " is grown in the multi-quantum well luminescence layer AlInGaN/AlN superlattices diffusion barrier layer " specifically includes:
The Al of 3~8 periods stacking is grown in the multi-quantum well luminescence layerxInyGa(1-x-y)N layers and AlN layers, In, the AlxInyGa(1-x-y)N layers of thickness range is 1~5nm, and AlN layers of the thickness range is 0.1~5nm.
As the further improvement of an embodiment of the present invention, the preparation method is specifically included:
One Sapphire Substrate is provided, and the Sapphire Substrate is placed in high temperature sputter；
Under 400~600 DEG C of growth conditions, in the Grown on Sapphire Substrates AlN buffer layer；
Under 1040~1100 DEG C, the growth conditions of 100~300Torr, in growing high temperature uGaN on the AlN buffer layer Layer, uGaN layers of thickness range are 2~4um；
Under 1040~1070 DEG C, the growth conditions of 100~200Torr, in growing high temperature N-type GaN layer, N on uGaN layer The thickness range of type GaN layer is 2~4um；
Under 750~900 DEG C, the growth conditions of 100~300Torr, sent out in growing low temperature multiple quantum wells in N-type GaN layer Photosphere, the multi-quantum well luminescence layer include the Al of several period superpositionsaInbGa(1-a-b)N quantum well layer and InGaN Quantum Well Layer, the AlaInbGa(1-a-b)The thickness range of N quantum well layer is 6~12nm, and the thickness range of the InGaN quantum well layer is 2~4nm；
Under 800~1000 DEG C, the growth conditions of 100~400Torr, in growing AlInGaN/ in multi-quantum well luminescence layer AlN superlattices diffusion barrier layer, the AlInGaN/AlN superlattices diffusion barrier layer include what several periods stacked AlxInyGa(1-x-y)N layers and AlN layers, the AlxInyGa(1-x-y)N layers of thickness range is 1~5nm, AlN layers of the thickness Range is 0.1~5nm；
Under 750~900 DEG C, the growth conditions of 100~400Torr, on AlInGaN/AlN superlattices diffusion barrier layer Growing P-type hole injection layer, the thickness range of p-type hole injection layer are 30~60nm；
Under 800~1000 DEG C, the growth conditions of 100~400Torr, in growing high temperature p-type on p-type hole injection layer GaN layer, the thickness range of p-type GaN layer are 30~50nm.
As the further improvement of an embodiment of the present invention, the AlN buffer layer with a thickness of 25nm；It is uGaN layers described Growth temperature be 1080 DEG C, growth pressure 200Torr, with a thickness of 2um；The growth temperature of the N-type GaN layer is 1060 DEG C, growth pressure 200Torr, with a thickness of 2.5um, doping concentration 1.5*1019/cm3；The life of the multi-quantum well luminescence layer Long temperature is 800 DEG C, growth pressure 250Torr；The growth temperature of the AlInGaN/AlN superlattices diffusion barrier layer is 850 DEG C, growth pressure 250Torr, the AlxInyGa(1-x-y)N layers with a thickness of 3nm, described AlN layers with a thickness of 1nm； The growth temperature of the p-type hole injection layer is 850 DEG C, growth pressure 200Torr, with a thickness of 30nm；The p-type GaN layer Growth temperature be 930 DEG C, growth pressure 200Torr, with a thickness of 40nm.
Compared with prior art, the beneficial effects of the present invention are: an embodiment of the present invention is in multi-quantum well luminescence layer And AlInGaN/AlN superlattices diffusion barrier layer is introduced between p-type hole injection layer, p-type doping diffusion can be stopped, reduce energy Band be bent caused by conduction level decline, reduce Quantum Well non-radiative recombination, promoted Quantum Well internal quantum efficiency effect to Improve luminous efficiency.
Detailed description of the invention
Fig. 1 is the LED epitaxial structure schematic diagram of an embodiment of the present invention；
Fig. 2 is the AlInGaN/AlN superlattices diffusion barrier layer schematic diagram of an embodiment of the present invention；
Fig. 3 is the preparation method block diagram of the LED epitaxial structure of an embodiment of the present invention.
Specific embodiment
Below with reference to specific embodiment shown in the drawings, the present invention will be described in detail.But these embodiments are simultaneously The present invention is not limited, structure that those skilled in the art are made according to these embodiments, method or functionally Transformation is included within the scope of protection of the present invention.
As shown in Figure 1, a kind of schematic diagram of LED epitaxial structure 100 for an embodiment of the present invention.
LED epitaxial structure 100 from bottom to top successively include substrate 10, AlN buffer layer 20, uGaN layer 30, N-type GaN layer 40, Multi-quantum well luminescence layer 50, AlInGaN/AlN superlattices diffusion barrier layer 60, p-type hole injection layer 70 and p-type GaN layer 80.
Substrate 10 can be made of sapphire material, and certainly, in other embodiments, substrate 10 can also be by other substrates Material is made, such as Si, SiC etc..
Here, substrate 10 is placed on the growth that subsequent layers are carried out on the load plate in high temperature sputter.
AlN buffer layer 20 with a thickness of 25nm.
UGaN layer 30 is undoped GaN layer, and the thickness range of uGaN layer 30 is 2~4nm, preferably, the thickness of uGaN layer 30 Degree is 2um.
N-type GaN layer 40 is high temperature N-type GaN layer, and the thickness range of N-type GaN layer 40 is 2~4nm, preferably, N-type GaN layer 40 with a thickness of 2.5um, the doping concentration of N-type GaN layer 40 is 1.5*1019/cm3。
Multi-quantum well luminescence layer 50 is low temperature multi-quantum well luminescence layer, the Al stacked including several periodsaInbGa(1-a-b)N Quantum well layer and InGaN quantum well layer, wherein the value range that the value range of a is 0~0.2, b is 0~0.3, AlaInbGa(1-a-b)The thickness range of N quantum well layer is 6~12nm, and the thickness range of InGaN quantum well layer is 2~4nm, is passed through Emission wavelength can be made within the required range by adjusting In component.
Here, multi-quantum well luminescence layer 50 includes the Al stacked in 6~10 periodsaInbGa(1-a-b)N quantum well layer and InGaN quantum well layer.
In conjunction with Fig. 2, AlInGaN/AlN superlattices diffusion barrier layer 60 includes the Al stacked in several periodsxInyGa(1-x-y)N 61 and AlN of layer layer 62, wherein the value range that the value range of x is 0~0.5, y is 0~0.3.
Here, AlInGaN/AlN superlattices diffusion barrier layer 60 includes the Al stacked in 3~8 periodsxInyGa(1-x-y)N layers 61 and AlN layer 62, wherein AlxInyGa(1-x-y)The thickness range of N layer 61 is 1~5nm, the thickness range of AlN layer 62 for 0.1~ 5nm。
Preferably, AlInGaN/AlN superlattices diffusion barrier layer 60 includes the Al stacked in 5 periodsxInyGa(1-x-y)N layers 61 and AlN layer 62, AlxInyGa(1-x-y)N layer 61 with a thickness of 3nm, AlN layer 62 with a thickness of 1nm.
It should be noted that in each cycle, AlxInyGa(1-x-y)N layer 61 and AlN layer 62 have first thickness, several Several first thickness in period are unequal, that is to say, that each pair of AlxInyGa(1-x-y)N layer 61 and AlN layer 62 can not uniform thickness, But not limited to this.
In addition, the value of x, y in several periods are unequal, that is to say, that each pair of AlxInyGa(1-x-y)N layer 61 and AlN Al component, In component in layer 62 can be not exactly the same component, and but not limited to this.
P-type hole injection layer 70 is p-type AlGaN electronic barrier layer, the thickness range of p-type hole injection layer 70 is 30~ 60nm, preferably, p-type hole injection layer 70 with a thickness of 30nm.
P-type GaN layer 80 is p-type GaN hole injection layer, and the thickness range of p-type GaN layer 80 is 30~50nm, preferably, P Type GaN layer 80 with a thickness of 40nm.
The LED epitaxial structure 100 of present embodiment is related to blue, green, ultraviolet band luminescent device and high-velocity electrons member Part introduces AlInGaN/AlN superlattices diffusion barrier layer 60 between multi-quantum well luminescence layer 50 and p-type hole injection layer 70, It can stop p-type doping diffusion, reduce conduction level caused by band curvature and decline, reduce Quantum Well non-radiative recombination, promoted The effect of Quantum Well internal quantum efficiency is to improve luminous efficiency.
In conjunction with Fig. 3, an embodiment of the present invention also provides a kind of preparation method of LED epitaxial structure 100, comprising steps of
S1: a substrate 10 is provided；
Specifically, step S1 are as follows: provide a Sapphire Substrate 10, and Sapphire Substrate 10 is placed in the reaction of high temperature sputter In room.
Here, substrate 10 can be Sapphire Substrate, and certainly, in other embodiments, substrate 10 can also be by other linings Bottom material is made, such as Si, SiC etc., and substrate 10 is placed on the life that subsequent layers are carried out on the load plate in high temperature sputter It is long.
S2: the growing AIN buffer layer 20 on substrate 10；
Specifically, step S2 are as follows: under 400~600 DEG C of growth conditions, buffered in growing AIN in Sapphire Substrate 10 Layer 20.
Here, AlN buffer layer 20 with a thickness of 25nm.
S3: uGaN layer 30 is grown on AlN buffer layer 20；
Specifically, step S3 are as follows: under 1040~1100 DEG C, the growth conditions of 100~300Torr, in AlN buffer layer 20 Upper growth high temperature uGaN layer 30.
Here, uGaN layer 30 is undoped GaN layer, and the thickness range of uGaN layer 30 is 2~4nm.
Preferably, uGaN layer 30 with a thickness of 2um, growth temperature is 1080 DEG C, growth pressure 200Torr.
S4: N-type GaN layer 40 is grown on uGaN layer 30；
Specifically, step S4 are as follows: under 1040~1070 DEG C, the growth conditions of 100~200Torr, on uGaN layer 30 Grow high temperature N-type GaN layer 40.
Here, the thickness range of N-type GaN layer 40 is 2~4nm.
Preferably, N-type GaN layer 40 with a thickness of 2.5um, the growth temperature of N-type GaN layer is 1060 DEG C, and growth pressure is 200Torr, and the doping concentration of N-type GaN layer 40 is 1.5*1019/cm3。
S5: multi-quantum well luminescence layer 50 is grown in N-type GaN layer 40；
Specifically, step S5 are as follows: under 750~900 DEG C, the growth conditions of 100~300Torr, in N-type GaN layer 40 Growing low temperature multi-quantum well luminescence layer 50.
Here, multi-quantum well luminescence layer 50 is low temperature multi-quantum well luminescence layer, is stacked including several periods AlaInbGa(1-a-b)N quantum well layer and InGaN quantum well layer, wherein the value range that the value range of a is 0~0.2, b is 0 ~0.3, AlaInbGa(1-a-b)The thickness range of N quantum well layer is 6~12nm, the thickness range of InGaN quantum well layer is 2~ 4nm can make emission wavelength within the required range by adjusting In component.
In addition, multi-quantum well luminescence layer 50 includes the Al stacked in 6~10 periodsaInbGa(1-a-b)N quantum well layer and InGaN quantum well layer.
Preferably, the growth temperature of multi-quantum well luminescence layer 50 is 800 DEG C, growth pressure 250Torr.
S6: AlInGaN/AlN superlattices diffusion barrier layer 60 is grown in multi-quantum well luminescence layer 50；
Specifically, step S6 are as follows: under 800~1000 DEG C, the growth conditions of 100~400Torr, in multiple quantum well light emitting AlInGaN/AlN superlattices diffusion barrier layer 60 is grown on layer 50.
Here, AlInGaN/AlN superlattices diffusion barrier layer 60 includes the Al stacked in several periodsxInyGa(1-x-y)N layers and AlN layers, wherein the value range that the value range of x is 0~0.5, y is 0~0.3.
In addition, AlInGaN/AlN superlattices diffusion barrier layer 60 includes the Al stacked in 3~8 periodsxInyGa(1-x-y)N layers 61 and AlN layer 62, wherein AlxInyGa(1-x-y)The thickness range of N layer 61 is 1~5nm, the thickness range of AlN layer 62 for 0.1~ 5nm。
Preferably, AlInGaN/AlN superlattices diffusion barrier layer 60 includes the Al stacked in 5 periodsxInyGa(1-x-y)N layers 61 and AlN layer 62, AlxInyGa(1-x-y)N layer 61 with a thickness of 3nm, AlN layer 62 with a thickness of 1nm, AlInGaN/AlN superlattices The growth temperature of diffusion barrier layer is 850 DEG C, growth pressure 250Torr.
It should be noted that in each cycle, AlxInyGa(1-x-y)N layer 61 and AlN layer 62 have first thickness, several Several first thickness in period are unequal, that is to say, that each pair of AlxInyGa(1-x-y)N layer 61 and AlN layer 62 can not uniform thickness, But not limited to this.
In addition, the value of x, y in several periods are unequal, that is to say, that each pair of AlxInyGa(1-x-y)N layer 61 and AlN Al component, In component in layer 62 can be not exactly the same component, and but not limited to this.
S7: the growing P-type hole injection layer 70 on AlInGaN/AlN superlattices diffusion barrier layer 60；
Specifically, step S7 are as follows: super in AlInGaN/AlN under 750~900 DEG C, the growth conditions of 100~400Torr Growing P-type hole injection layer 70 on lattice diffusion barrier layer 60.
Here, p-type hole injection layer 70 is p-type AlGaN electronic barrier layer, the thickness range of p-type hole injection layer 70 For 30~60nm.
Preferably, p-type hole injection layer 70 with a thickness of 30nm, the growth temperature of p-type hole injection layer is 850 DEG C, raw Long pressure is 200Torr.
S8: the growth P-type GaN layer 80 on p-type hole injection layer 70.
Specifically, step S8 are as follows: under 800~1000 DEG C, the growth conditions of 100~400Torr, injected in p-type hole High temperature p-type GaN layer 80 is grown on layer 70.
Here, p-type GaN layer 80 is p-type GaN hole injection layer, and the thickness range of p-type GaN layer 80 is 30~50nm.
Preferably, p-type GaN layer 80 with a thickness of 40nm, the growth temperature of p-type GaN layer is 930 DEG C, and growth pressure is 200Torr。
The preparation method of the LED epitaxial structure 100 of present embodiment be related to blue, green, ultraviolet band luminescent device and High-speed electronic component introduces the diffusion of AlInGaN/AlN superlattices between multi-quantum well luminescence layer 50 and p-type hole injection layer 70 Barrier layer 60 can stop p-type doping diffusion, reduce conduction level caused by band curvature and decline, it is non-radiative reduce Quantum Well It is compound, the effect of Quantum Well internal quantum efficiency is promoted to improve luminous efficiency.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say As a whole, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can for bright book With the other embodiments of understanding.
The series of detailed descriptions listed above only for feasible embodiment of the invention specifically Protection scope bright, that they are not intended to limit the invention, it is all without departing from equivalent implementations made by technical spirit of the present invention Or change should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of LED epitaxial structure, which is characterized in that the LED epitaxial structure successively includes substrate, AlN buffering from bottom to top Layer, uGaN layers, N-type GaN layer, multi-quantum well luminescence layer, AlInGaN/AlN superlattices diffusion barrier layer, p-type hole injection layer and P-type GaN layer.
2. LED epitaxial structure according to claim 1, which is characterized in that the AlInGaN/AlN superlattices diffusion barrier Layer includes the Al stacked in several periodsxInyGa(1-x-y)N layers and AlN layers, wherein the value range of x is the value model of 0~0.5, y Enclose is 0~0.3.
3. LED epitaxial structure according to claim 2, which is characterized in that the AlInGaN/AlN superlattices diffusion barrier Layer includes the Al stacked in 3~8 periodsxInyGa(1-x-y)N layers and AlN layers, wherein the AlxInyGa(1-x-y)N layers of thickness model It encloses for 1~5nm, AlN layers of the thickness range is 0.1~5nm.
4. according to LED epitaxial structure as claimed in claim 2, which is characterized in that in each cycle, the AlxInyGa(1-x-y)N Layer and it is described AlN layer with first thickness, several first thickness in several periods are unequal.
5. LED epitaxial structure as claimed in claim 2, which is characterized in that the value of x, y in several periods are unequal.
6. a kind of preparation method of LED epitaxial structure, it is characterised in that comprising steps of
One substrate is provided；
Growing AIN buffer layer over the substrate；
UGaN layers are grown on the AlN buffer layer；
N-type GaN layer is grown on the uGaN layer；
Multi-quantum well luminescence layer is grown in the N-type GaN layer；
AlInGaN/AlN superlattices diffusion barrier layer is grown in the multi-quantum well luminescence layer；
The growing P-type hole injection layer on the AlInGaN/AlN superlattices diffusion barrier layer；
The growth P-type GaN layer on the p-type hole injection layer.
7. the preparation method of LED epitaxial structure according to claim 6, which is characterized in that step is " in the multiple quantum wells AlInGaN/AlN superlattices diffusion barrier layer is grown on luminescent layer " it specifically includes:
The Al of several periods stackings is grown in the multi-quantum well luminescence layerxInyGa(1-x-y)N layers and AlN layers, wherein x's takes Being worth the value range that range is 0~0.5, y is 0~0.3.
8. the preparation method of LED epitaxial structure according to claim 6 or 7, which is characterized in that step is " in the volume AlInGaN/AlN superlattices diffusion barrier layer is grown on sub- trap luminescent layer " it specifically includes:
The Al of 3~8 periods stacking is grown in the multi-quantum well luminescence layerxInyGa(1-x-y)N layers and AlN layers, wherein institute State AlxInyGa(1-x-y)N layers of thickness range is 1~5nm, and AlN layers of the thickness range is 0.1~5nm.
9. the preparation method of LED epitaxial structure according to claim 6, it is characterised in that the preparation method is specifically wrapped It includes:
One Sapphire Substrate is provided, and the Sapphire Substrate is placed in high temperature sputter；
Under 400~600 DEG C of growth conditions, in the Grown on Sapphire Substrates AlN buffer layer；
Under 1040~1100 DEG C, the growth conditions of 100~300Torr, in growing high temperature uGaN layers on the AlN buffer layer, UGaN layers of thickness range is 2~4um；
Under 1040~1070 DEG C, the growth conditions of 100~200Torr, in growing high temperature N-type GaN layer, N-type GaN on uGaN layer The thickness range of layer is 2~4um；
Under 750~900 DEG C, the growth conditions of 100~300Torr, in growing low temperature multi-quantum well luminescence layer in N-type GaN layer, The multi-quantum well luminescence layer includes the Al of several period superpositionsaInbGa(1-a-b)N quantum well layer and InGaN quantum well layer, it is described AlaInbGa(1-a-b)The thickness range of N quantum well layer is 6~12nm, and the thickness range of the InGaN quantum well layer is 2~4nm；
Under 800~1000 DEG C, the growth conditions of 100~400Torr, in growing AlInGaN/AlN in multi-quantum well luminescence layer Superlattices diffusion barrier layer, the AlInGaN/AlN superlattices diffusion barrier layer include what several periods stacked AlxInyGa(1-x-y)N layers and AlN layers, the AlxInyGa(1-x-y)N layers of thickness range is 1~5nm, AlN layers of the thickness Range is 0.1~5nm；
Under 750~900 DEG C, the growth conditions of 100~400Torr, grown on AlInGaN/AlN superlattices diffusion barrier layer P-type hole injection layer, the thickness range of p-type hole injection layer are 30~60nm；
Under 800~1000 DEG C, the growth conditions of 100~400Torr, in growing high temperature p-type GaN layer on p-type hole injection layer, The thickness range of p-type GaN layer is 30~50nm.
10. the preparation method of LED epitaxial structure according to claim 9, which is characterized in that the thickness of the AlN buffer layer Degree is 25nm；UGaN layers of the growth temperature is 1080 DEG C, growth pressure 200Torr, with a thickness of 2um；The N-type GaN The growth temperature of layer is 1060 DEG C, growth pressure 200Torr, with a thickness of 2.5um, doping concentration 1.5*1019/cm3；It is described The growth temperature of multi-quantum well luminescence layer is 800 DEG C, growth pressure 250Torr；The AlInGaN/AlN superlattices diffusion resistance The growth temperature of barrier is 850 DEG C, growth pressure 250Torr, the AlxInyGa(1-x-y)N layers with a thickness of 3nm, it is described AlN layers with a thickness of 1nm；The growth temperature of the p-type hole injection layer is 850 DEG C, growth pressure 200Torr, with a thickness of 30nm；The growth temperature of the p-type GaN layer is 930 DEG C, growth pressure 200Torr, with a thickness of 40nm.
CN201810904544.9A 2018-08-09 2018-08-09 LED epitaxial structure and preparation method thereof Withdrawn CN109004074A (en)

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