CN106454164B - Charge mixes cumulative type CMOS-TDI imaging sensor with number - Google Patents
Charge mixes cumulative type CMOS-TDI imaging sensor with number Download PDFInfo
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- CN106454164B CN106454164B CN201610970573.6A CN201610970573A CN106454164B CN 106454164 B CN106454164 B CN 106454164B CN 201610970573 A CN201610970573 A CN 201610970573A CN 106454164 B CN106454164 B CN 106454164B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/768—Addressed sensors, e.g. MOS or CMOS sensors for time delay and integration [TDI]
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
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Abstract
The present invention relates to analogue layout fields, to realize that giving full play to charge-domain noiseless adds up, the cumulative chip area of numeric field is small, the advantages of without the cumulative upper limit, the speed of ADC proposes excessive demand when efficiency of transmission and full-well capacity and numeric field when not adding up simultaneously to charge-domain again add up, the technical solution adopted by the present invention is that, charge mixes cumulative type CMOS-TDI imaging sensor with number, by pixel array, column Parallel ADC array, column Parallel Digital domain accumulator array, shift register, time-sequence control module is constituted, pixel array sized is L column N row, N row pixel is divided into K array of sub-pixels in pixel array, each array of sub-pixels is made of M row pixel and a reading circuit；The cumulative mode of charge is used between each array of sub-pixels is at different levels, the cumulative mode of number is used between K subarray, wherein N=M × K.Present invention is mainly applied to IC design.
Description
Technical field
The present invention relates to analogue layout fields, in particular to CMOS-TDI image sensing design field.
Background technique
The image of shooting is converted to the electrical signal for being easy to store, transmit and handle by imaging sensor.For different
The working method of working environment, imaging sensor is also different, is broadly divided into: face formation and linear array type.Wherein formation image in face passes
The pixel array of sensor is arranged in two-dimensional array, obtains the complete image of a width and only pass through single exposure capable of completing, mainly
Applied in mobile phone and digital camera.The pixel array of linear array type imaging sensor is one dimensional linear array arrangement, to relative movement
Object is scanned imaging, is mainly used in imaging of medical, industrial detection, aerospace etc., working method can refer to
Fig. 1.Due to linear array type imaging sensor shooting scene in exposure stage always in movement, the exposure of line scan image sensor
The movement speed of scene is limited between light time.In the case where illuminance is very low and scanning speed is very fast, linear array type image is passed
The inductive signal of sensor becomes very faint, and the signal-to-noise ratio (Signal-to-Noise Ratio, SNR) of system becomes very low, sternly
Ghost image rings the quality of shooting picture.Therefore, it is proposed to time delay integration (Time Delay Integration, TDI) technology.
Repeated exposure is carried out to same object by multirow pixel when TDI technology, then add up in turn by the charge that exposure generates
Improve SNR and sensitivity.In the environment of the technology is especially suitable for high speed, low illumination and high contrast.
TDI type imaging sensor is very suitable to be realized by charge-coupled device (Charge Coupled Device, CCD).
Because the noiseless that signal may be implemented in CCD device is cumulative.TDI technology is applied in ccd image sensor more at present, is generally adopted
The structure of CCD-TDI imaging sensor is similar to a rectangular Array CCD sensor, as shown in Fig. 2, CCD-
The course of work of TDI imaging sensor is as follows: n grades of CCD-TDI imaging sensors one share n row pixel, and first on a certain column
The charge that row pixel is collected into first exposure cycle does not export directly, but with same column second pixel at second
The charge that is collected into exposure cycle is added, and so on CCD-TDI imaging sensor last line (line n) pixel collection
To charge and the charge being collected into of front n-1 times it is cumulative after read according still further to the way of output of common liner CCD image sensor.
In CCD-TDI imaging sensor, the amplitude of output signal is the cumulative of n pixel integration charge, that is, a pixel n
Collected charge in times exposure cycle, and then SNR has been elevated n times.
But the operating voltage of ccd image sensor is very high, therefore its power consumption is very high.And the realization of CCD depends on
Special technique, therefore ccd image sensor can not integrated simulation and digital processing circuit, therefore its system on the same chip
It is sufficiently complex.Compared to ccd image sensor, CMOS (Complementary Metal Oxide Semiconductor, complementation
Metal-oxide semiconductor (MOS)) imaging sensor can be compatible with well with modern CMOS processes, and have integrated level height, power consumption
The extremely important advantage such as low, low in cost.Cmos image sensor is gradually occupying the leading position in imaging sensor market.
CMOS-TDI imaging sensor is to realize TDI function based on CMOS technology.Specific there are three types of implementations: the first is charge-domain
Cumulative scheme, the program are the realization CCD working methods in CMOS technology, and key constraints are charge transfer efficiency and full trap
Capacity.The second way is the cumulative scheme of analog domain, and the program is that the analog signal of pixel output is first in simulation accumulator
It completes to add up, then completing the signal feeding ADC after adding up, (Analog to Digital Converter, simulation numeral turn
Parallel operation) in carry out quantization output.Storage unit usually in simulation accumulator is realized with capacitor.Therefore, when cumulative series
When relatively high, capacitor array will occupy very large chip area, and when cumulative series is very high, and the signal after adding up can be made to reach
To the upper limit, the loss of image information is caused.Therefore the series expansion ability of the cumulative scheme of analog domain is general.The third is numeric field
Cumulative scheme, pixel output signal is sent directly into ADC by the program to be quantified, and the digital quantity after quantization is then sent into number
It realizes in word accumulator and adds up to signal, but the program is very strict to the rate request of ADC, progressive rate is limited to
The speed of ADC.
Summary of the invention
In order to overcome the deficiencies of the prior art, the present invention is directed to propose charge mixes the CMOS-TDI of cumulative type, energy with number
The advantages of enough realizations give full play to charge-domain noiseless and add up, the upper limit that the cumulative chip area of numeric field is small, nothing adds up, while again not
The speed of ADC proposes excessive demand, this hair when efficiency of transmission and full-well capacity and numeric field when adding up to charge-domain are cumulative
It is bright the technical solution adopted is that, charge mix cumulative type CMOS-TDI imaging sensor with number, parallel by pixel array, column
ADC array, column Parallel Digital domain accumulator array, shift register, time-sequence control module are constituted, and pixel array sized is L column N
It goes, N row pixel is divided into K array of sub-pixels in pixel array, and each array of sub-pixels is by M row pixel and a reading circuit group
At；The cumulative mode of charge is used between each array of sub-pixels is at different levels, the cumulative mode of number is used between K subarray, wherein N
=M × K；The analog signal exported from pixel array changes into digital signal, column Parallel ADC array through column Parallel ADC ARRAY PROCESSING
Numeric field accumulator is connected afterwards, then accumulation operations are carried out by digital code of the numeric field accumulator to identical exposure signal, after adding up
Signal by shift register output, time-sequence control module be responsible for generate control modules co-ordination.
Array of sub-pixels is made of the cumulative type pixel of M row charge, transition time TLIt is long to be defined as the mobile pixel of object
The time required to degree, imaging sensor worked after M-1 transition time, and first time subject moves to first sub-pixel battle array
M-th location of pixels in column, first time subject are captured M times by first array of sub-pixels, first sub-pixel battle array
The signal of column is read by reading circuit, is converted into digital code by ADC.Using M transition time, it is taken for the first time at this time
Under object of which movement to the m-th pixel of second array of sub-pixels, the object being taken for the first time has been exposed 2 × M times, is exposed
The charge that light generates has been cumulatively added 2 × M times.K × M time is read in an identical manner, and just the n times of same object are caught in completion
It catches, while n times is completed to the signal of generation and are added up, realize N grades of TDI functions.
The features of the present invention and beneficial effect are:
The N grade charge that the present invention describes is mixed with number in cumulative type CMOS-TDI imaging sensor, and N grades of TDI are added up
It is cumulative cumulative with K grades of numeric fields to split into M grades of charge-domains, wherein N=M × K.Charge-domain accumulation method is used compared to simple,
The cumulative type in charge transfer effciency specific charge domain improves (1- ε)M-NTimes.Compared to numeric field accumulation method is used merely, to ADC
Rate request reduce M times.
Detailed description of the invention:
The operating mode schematic diagram of Fig. 1 line scan image sensor.
The operation principle schematic diagram of Fig. 2 CCD-TDI imaging sensor.
N grades of charges of Fig. 3 mix cumulative type CMOS-TDI image sensor architecture figure with number.
6 grades of charges of Fig. 4 mix cumulative type CMOS-TDI imaging sensor work flow diagram with number.
Specific embodiment
The cumulative scheme of analog domain is the voltage signal for obtaining pixel exposure or current signal in pixel array output end
It adds up, the signal after then adding up is by ADC quantization output.Integrated simulation domain in portion's is cumulative in the chip for program needs
Device, usually simulating accumulator is realized by integrating capacitor.Therefore, when cumulative series is relatively high, capacitor array will be accounted for
With very large chip area, and when cumulative series is very high, can make it is cumulative after signal reach the upper limit, cause losing for image information
It loses.The cumulative scheme of numeric field is that the signal for generating pixel exposure quantifies to generate binary code value by ADC, by binary code value
It adds up in digital accumulator, finally exports result.Because accumulator be by digital circuit, chip area compared with
It is small, while accumulation information is digital code value, and cumulative upper limit problem, therefore the cumulative series expansion of the cumulative scheme of numeric field is not present
It is very capable.The numeric field scheme that adds up is higher to the rate request of ADC therefore higher compared to the analog domain power consumption that adds up.Charge
Add up charge processing scheme of the scheme similar to CCD-TDI imaging sensor in domain, the photoproduction electricity that pixel generates object exposure
Lotus is shifted and is stored inside pixel, is finally read by reading circuit.Its reading circuit and common cmos image sense
Device reading circuit is identical, and design comparison is simple.Consider from design cost, the cost of the cumulative scheme of charge-domain is larger.
It is parallel by pixel array, column Parallel ADC array, column that charge mixes cumulative type CMOS-TDI imaging sensor with number
Numeric field accumulator array, shift register, time-sequence control module are constituted.Wherein pixel array sized is L column N row, pixel array
Middle N row pixel is divided into K array of sub-pixels, and each array of sub-pixels is made of M row pixel and a reading circuit；Every height picture
The cumulative mode of charge is used between pixel array is at different levels, the cumulative mode of number is used between K subarray, wherein N=M × K.Charge
It is shifted in adjacent potential well, the cumulative signal first by pixel output of number is completed to digitize by analog-digital converter, then again by counting
Word domain accumulator completes the accumulation operations to identical exposure signal transformation result.Specifically, the simulation letter exported from pixel array
Number digital signal is changed into through column Parallel ADC ARRAY PROCESSING, numeric field accumulator is connected after column Parallel ADC array, then by numeric field
Accumulator carries out accumulation operations to the digital code of identical exposure signal, and the signal after adding up is by shift register output, timing control
Molding block is responsible for generating the co-ordination of control modules.N grades of charges mix cumulative type CMOS-TDI image sensing with number
Device framework is as shown in Figure 3.
Array of sub-pixels is made of the cumulative type pixel of M row charge, transition time (TL) it is defined as the mobile pixel of object
The time required to length, imaging sensor worked after (M-1) a transition time, and first time subject moves to first sub- picture
M-th location of pixels in pixel array, first time subject are captured M times by first array of sub-pixels, first sub- picture
The signal of pixel array is read by reading circuit, is converted into digital code by ADC.Using M transition time, clapped for the first time at this time
Under the object of which movement taken the photograph to the m-th pixel of second array of sub-pixels, the object being taken for the first time has been exposed 2 × M
Secondary, the charge for exposing generation has been cumulatively added 2 × M times.K × M time is read in an identical manner, and just completion is to same object
N times capture, while completing n times to the signal of generation and adding up, and realize N grades of TDI functions.As shown in figure 4, for 6 grades, because
It is column concurrent working mode for sensor, each column working condition is identical, and each column pixel is divided into two sub-pixels array, every height picture
3 grades of charge transmission are realized in pixel array, and the signal that pixel collection arrives, first T are indicated with letterLAfterwards, first sub-pixel battle array
The exposure signal of column pixel 1 is A, second TLAfterwards, in pixel 1 signal through electric charge transfer into pixel 2 (assuming that transfer efficiency is
1), while the signal that is collected into of pixel 2 is A, therefore signal is 2A, third T in pixel 2LAfterwards, in pixel 2 signal through charge
It is transferred in pixel 3 (assuming that transfer efficiency is 1), while the exposure signal of pixel 3 is A, therefore signal is 3A in pixel 3, it is real
Show after the cumulative signal of 3 charges is read and has quantified through ADC.4th TLAfterwards, the exposure letter of second array of sub-pixels pixel 3
Number be A, the 5th TLAfterwards, signal is through electric charge transfer into pixel 4 (assuming that transfer efficiency be 1) in pixel 3, while pixel 4 is received
The signal integrated is A, therefore signal is 2A, the 6th T in pixel 2LAfterwards, in pixel 5 signal through electric charge transfer into pixel 6
(assuming that transfer efficiency is 1), while the exposure signal of pixel 6 is A, therefore signal is 3A in pixel 6, and it is tired to realize 3 charges
The signal added quantifies after reading through ADC, and the digital code that two sub-pixels array is read is added, and adds up to realize 6 grades.It is this
Working method can be generalized to the charge of any number of stages and number mixes in cumulative type CMOS-TDI imaging sensor.
CTE (Charge Transfer Efficiency, charge transfer efficiency) is defined as being transferred to down from a potential well
Ratio shared by the charge of one potential well.N grades of charges are mixed cumulative type CMOS-TDI with number and are added up M grades with form of electrical charges,
Charge transfer effciency is as shown in Equation 1, and ε indicates ratio shared by residual charge.
CTE=(1- ε)M (1)
From formula as can be seen that as the increase charge transfer efficiency of cumulative series is reducing.It is tired for N grades of charge-domains
Adding type CMOS-TDI, charge transfer efficiency are
CTE=(1- ε)N (2)
It therefore is all the CMOS-TDI of N for series, charge mixes cumulative charge transfer effciency specific charge domain with number
Cumulative type improves (1- ε)N-MTimes.
Within a transition time, ADC requirement n times in the cumulative type CMOS-TDI of N grades of numeric fields, and N grades of charges and number
Word mixes cumulative CMOS-TDI, type requirement K times, and the speed of ADC reduces M times, greatly reduces the design difficulty of ADC.
The present invention is applied in 256 column, 256 row CMOS-TDI imaging sensors.Charge-domain is 16 grades cumulative, and numeric field is cumulative
16 grades.One array of sub-pixels is made of 16 grades of pixels and a reading circuit.It works 15 transition time in imaging sensor
Afterwards, the object being taken for the first time has moved under the 16th pixel of second array of sub-pixels, first sub-pixel battle array
The signal of column is read by reading circuit, is converted into digital code by ADC.Using 16 transition time, it is taken for the first time at this time
Object of which movement to the 16th pixel of second array of sub-pixels under, the object being taken for the first time has been exposed 2 × 16
Secondary, the charge for exposing generation has been cumulatively added 2 × 16 times.It reads 16 × 16 times, just completes to same object in an identical manner
256 capture of body, while 256 times are completed to the signal of generation and is added up, realize 256 grades of TDI functions.
Claims (2)
1. a kind of charge mixes cumulative type CMOS-TDI imaging sensor with number, characterized in that parallel by pixel array, column
ADC array, column Parallel Digital domain accumulator array, shift register, time-sequence control module are constituted, and pixel array sized is L column N
It goes, N row pixel is divided into K array of sub-pixels in pixel array, and each array of sub-pixels is by M row pixel and a reading circuit group
At；The cumulative mode of charge is used between each array of sub-pixels is at different levels, the cumulative mode of number is used between K subarray, wherein N
=M × K；The analog signal exported from pixel array changes into digital signal, column Parallel ADC array through column Parallel ADC ARRAY PROCESSING
Numeric field accumulator is connected afterwards, then accumulation operations are carried out by digital code of the numeric field accumulator to identical exposure signal, after adding up
Signal by shift register output, time-sequence control module be responsible for generate control modules co-ordination.
2. charge as described in claim 1 mixes cumulative type CMOS-TDI imaging sensor with number, characterized in that sub-pixel
Array is made of the cumulative type pixel of M row charge, transition time TLThe time required to being defined as the mobile length in pixels of object, image
After the M-1 transition time of working sensor, first time subject moves to the m-th pixel in first array of sub-pixels
Position, first time subject are captured M times by first array of sub-pixels, and the signal of first array of sub-pixels is read electricity
Road is read, and is converted into digital code by ADC, using M transition time, the object of which movement being taken for the first time at this time is to second
Under the m-th pixel of array of sub-pixels, the object being taken for the first time has been exposed 2 × M times, has exposed the charge of generation
It has been cumulatively added 2 × M times, has read K × M time in an identical manner, just complete the n times capture to same object, while to generation
Signal completes n times and adds up, and realizes N grades of TDI functions.
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| CN107765291A (en) * | 2017-09-11 | 2018-03-06 | 天津大学 | The signal read-out device and method of X-ray detector |
| CN108965752A (en) * | 2018-06-22 | 2018-12-07 | 中国科学院长春光学精密机械与物理研究所 | Virtual big completely trap TDI cmos imaging system based on small pixel dimension detector |
| CN109660790B (en) * | 2018-12-14 | 2021-06-15 | 中国科学院长春光学精密机械与物理研究所 | Screening test method of TDICMOS detector |
| CN110650299A (en) * | 2019-09-09 | 2020-01-03 | 北京空间机电研究所 | Charge domain and digital domain mixed bidirectional TDI accumulation system and method |
| CN112019777B (en) * | 2020-09-16 | 2021-10-26 | 南京大学 | Time Delay Integration (TDI) based image sensor and imaging method thereof |
| CN113938626B (en) * | 2021-09-30 | 2023-03-24 | 中国科学院长春光学精密机械与物理研究所 | TDI-CMOS detector and compressed sensing imaging method applying same |
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