CN207282509U - 双面受光的晶体硅/薄膜硅异质结太阳电池 - Google Patents
双面受光的晶体硅/薄膜硅异质结太阳电池 Download PDFInfo
- Publication number
- CN207282509U CN207282509U CN201720645616.3U CN201720645616U CN207282509U CN 207282509 U CN207282509 U CN 207282509U CN 201720645616 U CN201720645616 U CN 201720645616U CN 207282509 U CN207282509 U CN 207282509U
- Authority
- CN
- China
- Prior art keywords
- silicon
- film
- crystalline silicon
- double
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 176
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 173
- 239000010703 silicon Substances 0.000 title claims abstract description 172
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 141
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 113
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000013081 microcrystal Substances 0.000 claims abstract description 49
- 230000003287 optical effect Effects 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 230000007547 defect Effects 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 196
- 238000000151 deposition Methods 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 54
- 230000008021 deposition Effects 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000000203 mixture Substances 0.000 claims description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 18
- 229910003437 indium oxide Inorganic materials 0.000 claims description 18
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 18
- 230000000694 effects Effects 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 14
- 238000002834 transmittance Methods 0.000 claims description 14
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 7
- 150000001721 carbon Chemical group 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 7
- 238000010348 incorporation Methods 0.000 claims description 7
- 238000001579 optical reflectometry Methods 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 7
- KWXIRYKCFANFRC-UHFFFAOYSA-N [O--].[O--].[O--].[Al+3].[In+3] Chemical compound [O--].[O--].[O--].[Al+3].[In+3] KWXIRYKCFANFRC-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052792 caesium Inorganic materials 0.000 claims description 6
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000005496 tempering Methods 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000000725 suspension Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 68
- 230000008569 process Effects 0.000 abstract description 49
- 238000005516 engineering process Methods 0.000 abstract description 26
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 238000003475 lamination Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 87
- 239000012528 membrane Substances 0.000 description 33
- 239000007789 gas Substances 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 24
- 238000004050 hot filament vapor deposition Methods 0.000 description 14
- 238000012546 transfer Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000003566 sealing material Substances 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 238000010248 power generation Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- 210000002268 wool Anatomy 0.000 description 9
- 235000008216 herbs Nutrition 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 206010037660 Pyrexia Diseases 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000427 thin-film deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000007792 gaseous phase Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000007306 turnover Effects 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004021 metal welding Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 102100021765 E3 ubiquitin-protein ligase RNF139 Human genes 0.000 description 1
- 101001106970 Homo sapiens E3 ubiquitin-protein ligase RNF139 Proteins 0.000 description 1
- 101100247596 Larrea tridentata RCA2 gene Proteins 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- -1 battery array Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 208000035475 disorder Diseases 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720645616.3U CN207282509U (zh) | 2017-06-06 | 2017-06-06 | 双面受光的晶体硅/薄膜硅异质结太阳电池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720645616.3U CN207282509U (zh) | 2017-06-06 | 2017-06-06 | 双面受光的晶体硅/薄膜硅异质结太阳电池 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN207282509U true CN207282509U (zh) | 2018-04-27 |
Family
ID=61992738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201720645616.3U Active CN207282509U (zh) | 2017-06-06 | 2017-06-06 | 双面受光的晶体硅/薄膜硅异质结太阳电池 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN207282509U (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109004053A (zh) * | 2017-06-06 | 2018-12-14 | 中国科学院上海微***与信息技术研究所 | 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法 |
CN110835743A (zh) * | 2018-08-17 | 2020-02-25 | 中智(泰兴)电力科技有限公司 | 用于太阳电池制造的9腔体立式hwcvd-pvd一体化设备 |
CN110943136A (zh) * | 2018-09-25 | 2020-03-31 | 君泰创新(北京)科技有限公司 | 一种p型硅薄膜和太阳能电池及制备方法 |
CN111816726A (zh) * | 2020-06-15 | 2020-10-23 | 隆基绿能科技股份有限公司 | 背接触太阳电池及生产方法、背接触电池组件 |
-
2017
- 2017-06-06 CN CN201720645616.3U patent/CN207282509U/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109004053A (zh) * | 2017-06-06 | 2018-12-14 | 中国科学院上海微***与信息技术研究所 | 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法 |
CN109004053B (zh) * | 2017-06-06 | 2024-03-29 | 通威太阳能(成都)有限公司 | 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法 |
CN110835743A (zh) * | 2018-08-17 | 2020-02-25 | 中智(泰兴)电力科技有限公司 | 用于太阳电池制造的9腔体立式hwcvd-pvd一体化设备 |
CN110943136A (zh) * | 2018-09-25 | 2020-03-31 | 君泰创新(北京)科技有限公司 | 一种p型硅薄膜和太阳能电池及制备方法 |
CN111816726A (zh) * | 2020-06-15 | 2020-10-23 | 隆基绿能科技股份有限公司 | 背接触太阳电池及生产方法、背接触电池组件 |
CN111816726B (zh) * | 2020-06-15 | 2023-10-03 | 隆基绿能科技股份有限公司 | 背接触太阳电池及生产方法、背接触电池组件 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109004053A (zh) | 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法 | |
US6288325B1 (en) | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts | |
TWI438904B (zh) | 薄膜式太陽能電池及其製造方法 | |
CN207320169U (zh) | 一种渐变带隙的钙钛矿电池 | |
CN207282509U (zh) | 双面受光的晶体硅/薄膜硅异质结太阳电池 | |
CN103107228B (zh) | 光电转换装置 | |
US20090314337A1 (en) | Photovoltaic devices | |
CN103493215A (zh) | 织构化玻璃上的多结构型薄膜硅太阳能电池 | |
Guha et al. | Science and technology of amorphous silicon alloy photovoltaics | |
CN106449815A (zh) | 基于非晶硅薄膜的异质结太阳能电池器件的制备方法 | |
CN110416342A (zh) | 一种基于金属纳米颗粒的hjt电池及其制备方法 | |
CN102157594B (zh) | 一种超晶格量子阱太阳电池及其制备方法 | |
CN112216747B (zh) | 一种异质结太阳能电池及其制备方法与应用 | |
CN114582983A (zh) | 异质结太阳能电池及其制备方法 | |
CN201051505Y (zh) | 一种混合型太阳能电池 | |
CN103280496A (zh) | 一种晶体硅异质结/微晶硅薄膜叠层光伏电池的制备方法 | |
Petti et al. | Thin Films in Photovoltaics | |
CN103594535A (zh) | 一种硅纳米线量子阱太阳能电池及其制备方法 | |
US20120012168A1 (en) | Photovoltaic device | |
CN103165695B (zh) | 一种CdTe薄膜太阳能电池 | |
CN110212060A (zh) | 一种电池制备方法、电池、电池组件及太阳能供电站 | |
CN113964228B (zh) | 一种异质结太阳能电池及其制备方法和应用 | |
CN112366232B (zh) | 一种异质结太阳能电池及其制备方法与应用 | |
CN210668381U (zh) | 一种硅基叠层太阳电池 | |
CN111354814B (zh) | 一种双结叠层太阳能电池及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210603 Address after: 610200 in Shuangliu Southwest Airport Economic Development Zone, Chengdu, Sichuan Province Patentee after: Zhongwei New Energy (Chengdu) Co.,Ltd. Address before: 200050 865 Changning Road, Changning District, Changning District, Shanghai. Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240117 Address after: 610200 within phase 6 of Industrial Development Zone of Southwest Airport Economic Development Zone, Shuangliu District, Chengdu City, Sichuan Province Patentee after: TONGWEI SOLAR (CHENGDU) Co.,Ltd. Address before: 610200 in Shuangliu Southwest Airport Economic Development Zone, Chengdu, Sichuan Province Patentee before: Zhongwei New Energy (Chengdu) Co.,Ltd. |
|
TR01 | Transfer of patent right |