CN106449117A - Preparation method of transparent grid electrode - Google Patents
Preparation method of transparent grid electrode Download PDFInfo
- Publication number
- CN106449117A CN106449117A CN201610811734.7A CN201610811734A CN106449117A CN 106449117 A CN106449117 A CN 106449117A CN 201610811734 A CN201610811734 A CN 201610811734A CN 106449117 A CN106449117 A CN 106449117A
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- CN
- China
- Prior art keywords
- pedot
- grid electrode
- masterplate
- netted
- transparent grid
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
The invention relates to a preparation method of a transparent grid electrode. The method comprises the following steps of (S1) covering a bottom plate with a mesh template; (S2) forming a mesh PEDOT thin film on the bottom plate covered with the mesh template; and (3) removing the mesh template. The method has the advantages that the mesh PEDOT is adopted as an auxiliary electrode to be deposited on the surface of an FTO/ITO, the FTO/ITO is combined with the PEDOT, capture of light can be increased and parasitic absorption of the light can be reduced by the PEDOT of a mesh structure, more light is captured and conducted, and the conductivity of an electrode can be effectively strengthened by the added PEDOT, so that the square resistance of conductive glass is effectively reduced and excellent transparency and conductivity can be more efficiently obtained.
Description
Technical field
The present invention relates to DSSC technical field, particularly a kind of transparent grid electrode preparation method.
Background technology
At this stage in field of dye-sensitized solar cells, the electrode of employing is the ITO/FTO covering of gross area, thoroughly
Luminosity and sheet resistance substantially 80~90% and 7~20.The electrode transmittance of this situation preparation generally with FTO thickness increase and
Reduce, and sheet resistance reduces with the increase of FTO thickness.Therefore transmittance and sheet resistance cannot take into account excellent performance simultaneously.
Metal current grid electrode technology has been widely used for semi-conductor industry, and technology is quite ripe, lattice and
Thickness can arbitrarily change as needed.But existing metal grid electrode light transmission is poor, part metals and the quick battery of dye in addition
Middle electrolyte can react, and is not suitable for contaminating quick battery.
PEDOT (Polyglycolic acid fibre) is the polymer of EDOT (3,4-ethylene dioxythiophene monomer), has molecule knot
The features such as structure is simple, energy gap is little, electrical conductivity is high, is widely used as organic thin film solar cell material.But existing PEDOT film
Preparation mostly adopt spin coating proceeding prepare, need to add the dissolving that other Organic substances carry out PEDOT in film-forming process, and prepare
Film uniformity slightly poor because the surface such as metal or glass has some defects or impurity, these impurity or defect etc. can be led
Cause its each region surface energy inconsistent, ultimately result in spin coating PEDOT surface uneven.In addition, in this technical process, spin coating
Latticed PEDOT cannot be prepared, spin coating simultaneously can not be accurately controlled the thickness of PEDOT.
Content of the invention
It is an object of the invention to the shortcoming overcoming prior art, there is provided a kind of transparent grid electrode preparation method.
The purpose of the present invention is achieved through the following technical solutions:A kind of transparent grid electrode preparation method, including following
Step:
S1, on base plate nerve of a covering shape masterplate;
S2, will be covered with being formed one layer of netted PEDOT thin film on the base plate of netted masterplate;
S3, the netted masterplate of removing.
In step S1, described base plate includes the upper and lower, upper strata be FTO thin film or ito thin film, lower floor be glass or
PET film, described netted masterplate covers on upper strata.
Described netted masterplate is lithographic template or the self assembly PS bead after reactive ion etching, masterplate grid aperture
Between a size of 10nm~1mm.
The mesh of rule or irregular alignment is had on described netted masterplate, grid is single size mesh or assorted size
Mesh, described mesh is micron order or small nano-size pores.
In step S2, one layer of netted PEDOT thin film is formed on base plate by electroplating technology, described PEDOT thin film
Thickness is 10nm~500nm.
Described electroplating technology comprises the following steps:
A, PEDOT thin film is placed in anode, the base plate covering netted masterplate is placed in negative electrode;
B, by negative electrode and anode insertion the mixed solution containing slaine, PEDOT, auxiliary element and additive in;
C, add electroplating voltage in negative electrode and anode two ends;
D, by the control to electroplating time, control the thickness that PEDOT film is plated on base plate;
E, reach and take out after required PEDOT film thickness.
Described slaine is cyanide, zincate, one of chloride or sulfate.
Described auxiliary element is leveling agent or brightener.
Described additive is chelating agent, surfactant, stress relieving agent, cleaner or wetting agent.
Described electroplating voltage is between 0~380V.
The present invention has advantages below:
1st, be deposited on the surface of FTO/ITO as auxiliary electrode using latticed PEDOT, in conjunction with FTO/ITO and
PEDOT, the PEDOT of network can increase the capture to light, reduces the parasitic absorption to light, so that more light is captured and pass
Derive, and increased PEDOT can effectively strengthen the electric conductivity of electrode, thus effectively reducing the square of electro-conductive glass
Resistance, the excellent transmittance of acquisition that can be more efficient and electric conductivity.
2nd, the present invention obtains PEDOT using electroplating technology, and surface is uniform, and thickness is accurately controlled by electroplating time.
Specific embodiment
The present invention will be further described below, but protection scope of the present invention is not limited to described below.
A kind of transparent grid electrode preparation method, comprises the following steps:
S1, on base plate nerve of a covering shape masterplate;
S2, will be covered with being formed one layer of netted PEDOT thin film on the base plate of netted masterplate;
S3, the netted masterplate of removing.
In step S1, described base plate includes the upper and lower, upper strata be FTO thin film or ito thin film, lower floor be glass or
PET film, described netted masterplate covers on upper strata.
Described netted masterplate is lithographic template or the self assembly PS bead after reactive ion etching, masterplate grid aperture
Between a size of 10nm~1mm.
The mesh of rule or irregular alignment is had on described netted masterplate, grid is single size mesh or assorted size
Mesh, described mesh is micron order or small nano-size pores.
In step S2, one layer of netted PEDOT thin film is formed on base plate by electroplating technology, described PEDOT thin film
Thickness is 10nm~500nm.
Described electroplating technology comprises the following steps:
A, PEDOT thin film is placed in anode, the base plate covering netted masterplate is placed in negative electrode;
B, by negative electrode and anode insertion the mixed solution containing slaine, PEDOT, auxiliary element and additive in;
C, add electroplating voltage in negative electrode and anode two ends;
D, by the control to electroplating time, control the thickness that PEDOT film is plated on base plate;
E, reach and take out after required PEDOT film thickness.
Described slaine is cyanide, zincate, one of chloride or sulfate.
Described auxiliary element is leveling agent or brightener.
Described additive is chelating agent, surfactant, stress relieving agent, cleaner or wetting agent.
Described electroplating voltage is between 0~380V.
The photoelectric properties of common FTO and FTO+PEDOT are contrasted, as shown in the table:
Thickness (nm) | Transmittance | Sheet resistance |
500FTO | 83.7 | 10 |
400FTO+20Au | 81 | 7.3 |
400FTO+20PEDOT | 90 | 6.8 |
As seen from the above table, 400FTO+20PEDOT, compared to 500FTO and 400FTO+20Au, has higher transmittance,
There is lower sheet resistance simultaneously, get both excellent transmittance and electric conductivity simultaneously.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, permissible
Understand and can carry out multiple changes, modification, replacement to these embodiments without departing from the principles and spirit of the present invention
And modification, the scope of the present invention be defined by the appended.
Claims (10)
1. a kind of transparent grid electrode preparation method it is characterised in that:Comprise the following steps:
S1, on base plate nerve of a covering shape masterplate;
S2, will be covered with being formed one layer of netted PEDOT thin film on the base plate of netted masterplate;
S3, the netted masterplate of removing.
2. a kind of transparent grid electrode preparation method according to claim 1 it is characterised in that:In step S1, described bottom
Plate includes the upper and lower, and upper strata is FTO thin film or ito thin film, and lower floor is glass or PET film, and described netted masterplate covers
On upper strata.
3. a kind of transparent grid electrode preparation method according to claim 1 and 2 it is characterised in that:Described netted masterplate
Self assembly PS bead for lithographic template or after reactive ion etching, masterplate grid orifice size is between 10nm~1mm.
4. a kind of transparent grid electrode preparation method according to claim 1 and 2 it is characterised in that:Described netted masterplate
On there is the mesh of rule or irregular alignment, grid is single size mesh or assorted size mesh, and described mesh is micron
Level or small nano-size pores.
5. a kind of transparent grid electrode preparation method according to claim 1 it is characterised in that:In step S2, by electricity
Depositing process forms one layer of netted PEDOT thin film on base plate, and the thickness of described PEDOT thin film is 10nm~500nm.
6. a kind of transparent grid electrode preparation method according to claim 5 it is characterised in that:Described electroplating technology includes
Following steps:
A, PEDOT thin film is placed in anode, the base plate covering netted masterplate is placed in negative electrode;
B, by negative electrode and anode insertion the mixed solution containing slaine, PEDOT, auxiliary element and additive in;
C, add electroplating voltage in negative electrode and anode two ends;
D, by the control to electroplating time, control the thickness that PEDOT film is plated on base plate;
E, reach and take out after required PEDOT film thickness.
7. a kind of transparent grid electrode preparation method according to claim 6 it is characterised in that:Described slaine is cyaniding
Thing, zincate, one of chloride or sulfate.
8. a kind of transparent grid electrode preparation method according to claim 6 it is characterised in that:Described auxiliary element is whole
Flat agent or brightener.
9. a kind of transparent grid electrode preparation method according to claim 6 it is characterised in that:Described additive is complexation
Agent, surfactant, stress relieving agent, cleaner or wetting agent.
10. a kind of transparent grid electrode preparation method according to claim 6 it is characterised in that:Described electroplating voltage is 0
Between~380V.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109445632A (en) * | 2018-10-24 | 2019-03-08 | 信利光电股份有限公司 | A kind of metal grill touch screen manufacturing method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101246911A (en) * | 2008-03-10 | 2008-08-20 | 北京航空航天大学 | Metal microgrid transparent electrode and method for producing the same |
CN102817057A (en) * | 2012-08-02 | 2012-12-12 | 上海交通大学 | Graphene oxide/conducting polymer composite coating and preparation method thereof |
CN103060873A (en) * | 2013-01-17 | 2013-04-24 | 河南科技大学 | Method for preparing porous array ZnO thin film in graded structure by electro-deposition method |
CN105280840A (en) * | 2014-07-09 | 2016-01-27 | Tcl集团股份有限公司 | Flexible transparent electrode and manufacturing method thereof |
CN105788760A (en) * | 2016-04-22 | 2016-07-20 | 陈初群 | Method of manufacturing transparent conductive electrode |
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2016
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101246911A (en) * | 2008-03-10 | 2008-08-20 | 北京航空航天大学 | Metal microgrid transparent electrode and method for producing the same |
CN102817057A (en) * | 2012-08-02 | 2012-12-12 | 上海交通大学 | Graphene oxide/conducting polymer composite coating and preparation method thereof |
CN103060873A (en) * | 2013-01-17 | 2013-04-24 | 河南科技大学 | Method for preparing porous array ZnO thin film in graded structure by electro-deposition method |
CN105280840A (en) * | 2014-07-09 | 2016-01-27 | Tcl集团股份有限公司 | Flexible transparent electrode and manufacturing method thereof |
CN105788760A (en) * | 2016-04-22 | 2016-07-20 | 陈初群 | Method of manufacturing transparent conductive electrode |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109445632A (en) * | 2018-10-24 | 2019-03-08 | 信利光电股份有限公司 | A kind of metal grill touch screen manufacturing method |
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