CN103928617A - Method for manufacturing high-conductivity organic thin-film solar photovoltaic cells - Google Patents
Method for manufacturing high-conductivity organic thin-film solar photovoltaic cells Download PDFInfo
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for manufacturing high-conductivity organic thin-film solar photovoltaic cells and belongs to the field of organic semiconductor thin-film solar photovoltaic cells. In order to solve the technical problems that in the prior art, metal cathodes manufactured through spraying are high in sheet resistance and low in conductivity, and the carrier transport efficiency of solar cells is low. According to the method, annealing is performed on metal cathodes manufactured through nanometer conductive ink in a situ-sintering and spraying mode through acid solvent, the type of the acid solvent and the annealing time are optimized, coating of conducive nanoparticles with polyesters in conductive ink can be effectively adjusted, the conductivity of the metal cathodes is improved, the boundary diffraction effect of the metal cathodes is eliminated, the carrier transport efficiency is promoted, and thus the photoelectric conversion efficiency of devices is effectively improved.
Description
Technical field
The invention belongs to organic polymer photovoltaic device or organic semiconductor thin-film solar-energy photo-voltaic cell field, be specifically related to a kind of preparation method of high conductivity organic thin film solar photovoltaic cell.
Background technology
Along with the swift and violent increase of global energy demand, effective utilization of regenerative resource is become to problem demanding prompt solution.At present, the energy using in the world, great majority come from the exploitation of fossil fuel, wherein mainly comprise oil, natural gas and coal etc.But the reserves of fossil resource are limited.Comparatively speaking, the sun in the milky way galaxy is irradiated to tellurian solar energy, have the advantages such as inexhaustible, nexhaustible, pollution-free, the photovoltaic cell field particularly utilizing at solar energy, has become the especially competitively focus of development and utilization of western developed country of countries in the world.At present, according to the difference of material character of the photoactive layer of composition solar-energy photo-voltaic cell, active layer constituent material can be divided into inorganic semiconductor material and organic semiconducting materials, corresponding respectively is with it inorganic and organic solar photovoltaic cell.Compared with inorganic solar-energy photo-voltaic cell, organic solar photovoltaic cell not only has the highest identical theoretical energy conversion efficiency, but also have quality light, can wet method film forming, can be processed into extraordinary shape and easily make flexible device, even can realize the significant advantages such as all plastic, in wearable electronic equipment, have broad application prospects, oneself is through becoming one of focus of domestic and international research and development at present.1986, C. first W. Tang has reported the organic solar photovoltaic cell of the planar heterojunction structure that adopts organic electron donor-electron acceptor, the photoelectric conversion efficiency of this battery has reached 1%, is a landmark breakthrough of the research of organic solar photovoltaic cell.The nineties in 20th century, along with the fast development of thin film technique, the performance of organic solar photovoltaic cell prepared by employing new material, new construction, new technology is greatly enhanced.
But organic solar photovoltaic cell is extensive practical also to need time, topmost limited reason is that the device performance, the especially photoelectric conversion efficiency that wait to improve need to significantly promote.In the factors of raising photoelectric conversion efficiency, short circuit current has the greatest impact to it, and short circuit current is subject to the direct impact of battery series resistance.Thereby, prepare the device of low series resistance, high conductivity, be the place of improving the key of organic solar photovoltaic cell photoelectric conversion efficiency.At present, the metallic cathode being most widely used in organic solar photovoltaic cell is tin_doped indium oxide film (ITO).But, more than ITO sheet resistance is generally 10 Ω/sq, relatively high, seriously affect the lifting of the short circuit current performance of device.Comparatively speaking, as the novel process technology of preparing metallic cathode, the metallic cathode that utilizes the method for conductive ink in-situ sintering spraying preparation to prepare, can significantly improve the lower problem of ITO metallic cathode conductivity, thereby effectively improve the performance of organic solar photovoltaic device entirety.
But, due to the package action of organic polymer to metal nanoparticle in conductive nano ink, make the metallic cathode sheet resistance of spraying preparation high, conductivity is low; Gap small between the mask plate that uses in metallic cathode process and substrate is prepared in spraying, can make metallic cathode border produce diffraction effect, causes metallic cathode obscurity boundary, and further the size of reduction of device becomes abnormal difficult; Meanwhile, the metallic cathode surface topography of high temperature sintering is coarse, and the organic film of preparing on metallic cathode can not contact well with it, thereby has reduced the carrier transport efficiency of device.
Summary of the invention
The present invention is directed to above-mentioned deficiency, a kind of preparation method of high conductivity organic thin film solar photovoltaic cell is provided, by the metallic cathode of preparation being taked to acid flux material annealing, regulate the parcel of polymer to conductive nano-particles in conductive ink, thereby improve the conductivity of metallic cathode, eliminate metallic cathode boundary diffraction effect, improve carrier transport efficiency.
To achieve these goals, the technical solution used in the present invention is:
A preparation method for high conductivity organic thin film solar photovoltaic cell, is characterized in that, comprises the following steps:
A, substrate is cleaned, after cleaning, dry up with nitrogen;
B, substrate is fixed on hot platform, mask film covering plate on substrate, uses the spraying of conductive nano ink in-situ sintering to prepare metallic cathode;
C, the metallic cathode preparing is carried out to acid flux material annealing in process;
D, at metallic conduction cathode surface rotary coating, printing or spraying ZnO or TiO
2solution, and formed film is toasted, cathode buffer layer formed; Or adopt vacuum vapour deposition evaporation TPBi, BCP, Bphen, Alq
3prepare cathode buffer layer;
The mode of e, employing spin coating or spraying or self assembly or inkjet printing or silk screen printing is prepared PTB7:PCBM photoactive layer on cathode buffer layer;
F, at photoactive layer surface evaporation, rotary coating or spraying anode buffer layer;
G, coating on anode buffer layer, printing or spraying PEDOT:PSS anode, and toast.
Further, baseplate material described in step a is glass or transparent polymer; Described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
Further, the conductive ink described in step b is one or more that conduction gold paste, silver are starched, copper is starched.
Further, acid flux material annealing described in step c comprises following content: the substrate for preparing metallic cathode is placed in to closed container, in container, inject acid flux material, make solvent gas and the prepared metallic cathode of volatilization carry out solvent and anneal and have an effect, the liquid level of acid flux material is lower than the metallic cathode layer 1 ~ 10cm of substrate.
Further, described in step c, acid flux material is by mass percentage: isopropyl alcohol 3～7%, hydrochloric acid 93～97%; Described hydrochloric acid is that mass fraction is 37% hydrochloride aqueous solution.
Further, acid flux material annealing time described in step c is 5～24min.
Further, the thickness range of the cathode buffer layer described in steps d is 5～30nm.
Further, the photoactive layer described in step e is prepared from by the mixed solution of electron donor material PTB7 and electron acceptor material PCBM, and thickness range is 50～300 nm; In described mixed solution, the mass percent of PTB7 and PCBM is 1:20～10:1, and the concentration of described mixed solution is 1～25mg/ml.
Further, the anode buffer layer material described in step f is MoO
3, thickness range is 10～50nm.
Further, the thickness range of the anode of PEDOT:PSS described in step g is 100～300nm.
Compared with prior art, the invention has the advantages that:
One, the preparation method of high conductivity organic thin film solar photovoltaic cell provided by the invention, metallic cathode has been carried out to acid flux material annealing, the parcel of telomerized polymer to metal nanoparticle effectively, to reduce the resistance of metallic cathode, thereby reduce the series resistance of device entirety, improve the short-circuit current density of battery;
Two, the preparation method of high conductivity organic thin film solar photovoltaic cell provided by the invention, metallic cathode has been carried out to acid flux material annealing, the acid flux material kind and the annealing time thereof that provide, can effectively eliminate the metallic cathode boundary diffraction effect being produced by spraying coating process, distinct metallic cathode border, for reduction of device size provides condition;
Three, the preparation method of high conductivity organic thin film solar photovoltaic cell provided by the invention, effectively reduce metallic cathode surface roughness, modify metallic cathode surface topography, improve contacting between thin polymer film and metallic cathode, thereby improved carrier transport density in device.
Brief description of the drawings
Fig. 1 is structural representation of the present invention, in figure: 1 represents that substrate, 2 represents that metallic cathode, 3 represents that cathode buffer layer, 4 represents that photoactive layer, 5 represents that anode buffer layer, 6 represents PEDOT:PSS anode;
Fig. 2 is the surface topography map of metallic cathode, and wherein (a) represents the surface topography map of the metallic cathode of not annealing through acid flux material in embodiment 1; (b) surface topography map of the metallic cathode of acid flux material annealing 5min in expression embodiment 2; (c) surface topography map of the metallic cathode of acid flux material annealing 10min in expression embodiment 3; (d) surface topography map of the metallic cathode of acid flux material annealing 30min in expression embodiment 10.
embodiment:
Below in conjunction with the drawings and specific embodiments, the present invention is further illustrated.
embodiment 1(control group)
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50s); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.655V, short circuit current (J
sC)=14.5mA/cm
2, fill factor, curve factor (FF)=0.515, photoelectric conversion efficiency (PCE)=4.89%.
embodiment 2
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; The metallic cathode preparing is used to acid flux material (liquid level of acid flux material is than the low 10cm of metallic cathode layer of substrate for isopropyl alcohol 3%, the HCl solution 97% that mass fraction is 37%) annealing (5min); At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50s); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the V of device
oC=0.678V, J
sC=16.9mA/cm
2, FF=0.527, PCE=6.03%.
embodiment 3
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; The metallic cathode preparing is used to acid flux material (liquid level of acid flux material is than the low 10cm of metallic cathode layer of substrate for isopropyl alcohol 3%, the HCl solution 97% that mass fraction is 37%) annealing (10min); At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50s); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the V of device
oC=0.667V, J
sC=17.3mA/cm
2, FF=0.567, PCE=6.54%.
embodiment 4
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; The metallic cathode preparing is used to acid flux material (liquid level of acid flux material is than the low 6cm of metallic cathode layer of substrate for isopropyl alcohol 6%, the HCl solution 94% that mass fraction is 37%) annealing (10min); At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50s); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the V of device
oC=0.681V, J
sC=16.5mA/cm
2, FF=0.545, PCE=6.12%.
embodiment 5
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; The metallic cathode preparing is used to acid flux material (liquid level of acid flux material is than the low 10cm of metallic cathode layer of substrate for isopropyl alcohol 3%, the HCl solution 97% that mass fraction is 37%) annealing (15min); At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50s); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the V of device
oC=0.689V, J
sC=16.7mA/cm
2, FF=0.538, PCE=6.19%.
embodiment 6
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; The metallic cathode preparing is used to acid flux material (liquid level of acid flux material is than the low 7cm of metallic cathode layer of substrate for isopropyl alcohol 4%, the HCl solution 96% that mass fraction is 37%) annealing (10min); At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50s); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the V of device
oC=0.659V, J
sC=16.7mA/cm
2, FF=0.565, PCE=6.21%.
embodiment 7
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; The metallic cathode preparing is used to acid flux material (liquid level of acid flux material is than the low 10cm of metallic cathode layer of substrate for isopropyl alcohol 3%, the HCl solution 97% that mass fraction is 37%) annealing (20min); At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50s); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the V of device
oC=0.635V, J
sC=15.8mA/cm
2, FF=0.533, PCE=5.35%.
embodiment 8
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; The metallic cathode preparing is used to acid flux material (liquid level of acid flux material is than the low 10cm of metallic cathode layer of substrate for isopropyl alcohol 3%, the HCl solution 97% that mass fraction is 37%) annealing (25min); At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50s); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the V of device
oC=0.626V, J
sC=14.3mA/cm
2, FF=0.516, PCE=4.62%.
embodiment 9
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; The metallic cathode preparing is used to acid flux material (liquid level of acid flux material is than the low 9cm of metallic cathode layer of substrate for isopropyl alcohol 5%, the HCl solution 95% that mass fraction is 37%) annealing (10min); At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the V of device
oC=0.673V, J
sC=16.9mA/cm
2, FF=0.587, PCE=6.68%.
embodiment 10
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; The metallic cathode preparing is used to acid flux material (liquid level of acid flux material is than the low 10cm of metallic cathode layer of substrate for isopropyl alcohol 3%, the HCl solution 97% that mass fraction is 37%) annealing (30min); At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50s); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the V of device
oC=0.618V, J
sC=13.6mA/cm
2, FF=0.514, PCE=4.32%.
embodiment 11
The substrate that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Metallic cathode is prepared in in-situ sintering on hot platform (150 DEG C) spraying; The metallic cathode preparing is used to acid flux material (liquid level of acid flux material is lower than the metallic cathode layer 8cm of substrate for isopropyl alcohol 7%, the HCl solution 93% that mass fraction is 37%) annealing (10min); At metallic cathode surface rotary coating ZnO(5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare PTB7:PCBM(1:20,20mg/ml) photoactive layer (1200rpm, 50s); At photoactive layer surface evaporation MoO
3(10nm) anode buffer layer; On anode buffer layer, spray PEDOT:PSS anode (100nm), and toast (130 DEG C, 10min).Under standard test condition: AM1.5,100mW/cm
2, record the V of device
oC=0.679V, J
sC=16.6mA/cm
2, FF=0.571, PCE=6.44%.
Above in embodiment, the relation of metallic cathode acid flux material annealing in process time and its sheet resistance is in table 1:
The relation table of table 1. acid flux material annealing time and metallic cathode sheet resistance
| Solvent annealing time (min) | Sheet resistance (ohm/sq) |
| 0(embodiment 1) | 2.56 |
| 5(embodiment 2) | 1.67 |
| 10(embodiment 3) | 1.25 |
| 15(embodiment 5) | 1.81 |
| 20(embodiment 7) | 2.16 |
| 25(embodiment 8) | 2.77 |
| 30(embodiment 10) | 3.05 |
From upper table, can observe through the sheet resistance of the metallic cathode of acid flux material annealing in process is first to reduce to raise afterwards, this is because annealing time is when suitable, the parcel of the adjustable polymer of acid flux material and silver nano-grain, make silver nano-grain separate out and reunite and form continuous caking, thereby the sheet resistance of metallic cathode is reduced.But in the time that annealing time is long, acid flux material annealing can make to be aggregated thing and be wrapped in silver nano-grain stripping metal cathode surface together with polymer, has destroyed continuity and the uniformity of metallic cathode main body, causes the sheet resistance of metallic cathode sharply to increase.Hence one can see that, in the preparation method of organic thin film solar photovoltaic cell provided by the invention, the annealing time of acid flux material carried out to creativeness optimization, can effectively reduce the sheet resistance of metallic cathode, thereby reduce the series resistance R of solar-energy photo-voltaic cell
s, and then the short-circuit current density of lifting battery, the electricity conversion of raising battery.
With reference to Fig. 2, be the surface topography map of metallic cathode, wherein (a) represents the surface topography map of the metallic cathode of not annealing through acid flux material in embodiment 1; (b) surface topography map of the metallic cathode of acid flux material annealing 5min in expression embodiment 2; (c) surface topography map of the metallic cathode of acid flux material annealing 10min in expression embodiment 3; (d) surface topography map of the metallic cathode of acid flux material annealing 30min in expression embodiment 10.
As can be seen from Figure 2: metallic cathode is (b figure and c figure) within the scope of suitable acid flux material annealing time, than not annealing in (a figure) through acid flux material and excessively solvent annealing (d figure), its border is more clear, show that acid flux material annealing can eliminate the metallic cathode boundary diffraction effect being produced by spraying coating process effectively, for reduction of device size provides condition; And the metallic cathode of b figure and c figure is lower than the surface roughness of the metallic cathode of a figure and d figure, shows that acid flux material annealing can effectively improve contacting between thin polymer film and metallic cathode, thereby improved carrier transport density in device.
The embodiment of the present invention is preferred embodiments, but its concrete enforcement is not limited to this, and those of ordinary skill in the art is very easily according to above-described embodiment; understand spirit of the present invention; and make different amplifications and variation, and only otherwise depart from the present invention, within all belonging to protection scope of the present invention.
Claims (10)
1. a preparation method for high conductivity organic thin film solar photovoltaic cell, is characterized in that, comprises the following steps:
A, substrate is cleaned, after cleaning, dry up with nitrogen;
B, substrate is fixed on hot platform, mask film covering plate on substrate, uses the spraying of conductive nano ink in-situ sintering to prepare metallic cathode;
C, the metallic cathode preparing is carried out to acid flux material annealing in process;
D, at metallic conduction cathode surface rotary coating, printing or spraying ZnO or TiO
2solution, and formed film is toasted, cathode buffer layer formed; Or employing vacuum vapour deposition evaporation TPBi, BCP, Bphen or Alq
3in one or more prepare cathode buffer layer;
The mode of e, employing spin coating or spraying or self assembly or inkjet printing or silk screen printing is prepared PTB7:PCBM photoactive layer on cathode buffer layer;
F, at photoactive layer surface evaporation, rotary coating or spraying anode buffer layer;
G, coating on anode buffer layer, printing or spraying PEDOT:PSS anode, and toast.
2. the preparation method of high conductivity organic thin film solar photovoltaic cell according to claim 1, is characterized in that, baseplate material described in step a is glass or transparent polymer; Described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
3. the preparation method of high conductivity organic thin film solar photovoltaic cell according to claim 1, is characterized in that, the conductive ink described in step b is one or more that conduction gold paste, silver are starched, copper is starched.
4. the preparation method of high conductivity organic thin film solar photovoltaic cell according to claim 1, it is characterized in that, acid flux material annealing described in step c comprises following content: the substrate for preparing metallic cathode is placed in to closed container, in container, inject acid flux material, the liquid level of acid flux material is lower than the metallic cathode layer 1 ~ 10cm of substrate.
5. according to the preparation method of the high conductivity organic thin film solar photovoltaic cell described in claim 1 or 4, it is characterized in that, acid flux material described in step c is by mass percentage: isopropyl alcohol 3～7%, hydrochloric acid 93～97%; Described hydrochloric acid is that mass fraction is 37% hydrochloride aqueous solution.
6. according to the preparation method of the high conductivity organic thin film solar photovoltaic cell described in claim 1 or 4, it is characterized in that, the annealing time of acid flux material described in step c is 5～24min.
7. the preparation method of high conductivity organic thin film solar photovoltaic cell according to claim 1, is characterized in that, the thickness range of the cathode buffer layer described in steps d is 5～30nm.
8. the preparation method of high conductivity organic thin film solar photovoltaic cell according to claim 1, it is characterized in that, photoactive layer described in step e is prepared from by the mixed solution of electron donor material PTB7 and electron acceptor material PCBM, and thickness range is 50～300 nm; In described mixed solution, the mass percent of PTB7 and PCBM is 1:20～10:1, and the concentration of described mixed solution is 1～25mg/ml.
9. the preparation method of high conductivity organic thin film solar photovoltaic cell according to claim 1, is characterized in that, the anode buffer layer material described in step f is MoO
3, thickness range is 10～50nm.
10. the preparation method of high conductivity organic thin film solar photovoltaic cell according to claim 1, is characterized in that, the thickness range of the anode of PEDOT:PSS described in step g is 100～300nm.
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Cited By (2)
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| CN104576931A (en) * | 2015-01-12 | 2015-04-29 | 华南理工大学 | Organic/polymer solar battery device and preparation method thereof |
| CN106410042A (en) * | 2016-11-16 | 2017-02-15 | 电子科技大学 | Organic solar cell donor material, organic solar cell and preparation method thereof |
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| CN103627255A (en) * | 2013-05-06 | 2014-03-12 | 苏州冷石纳米材料科技有限公司 | Nano-silver conductive ink and conductive film prepared by employing same |
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| CN101996699A (en) * | 2009-08-14 | 2011-03-30 | 施乐公司 | New process to form highly conductive feature from silver nanoparticles with reduced processing temperature |
| CN102766371A (en) * | 2011-05-04 | 2012-11-07 | 上海鑫力新材料科技有限公司 | Preparation method for nanometer conductive ink |
| CN103627255A (en) * | 2013-05-06 | 2014-03-12 | 苏州冷石纳米材料科技有限公司 | Nano-silver conductive ink and conductive film prepared by employing same |
| CN103594627A (en) * | 2013-10-30 | 2014-02-19 | 电子科技大学 | Inversed organic thin-film solar cell and manufacturing method of inversed organic thin-film solar cell |
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| CN104576931A (en) * | 2015-01-12 | 2015-04-29 | 华南理工大学 | Organic/polymer solar battery device and preparation method thereof |
| CN104576931B (en) * | 2015-01-12 | 2017-06-20 | 华南理工大学 | A kind of organic/polymer solar cells device and preparation method thereof |
| CN106410042A (en) * | 2016-11-16 | 2017-02-15 | 电子科技大学 | Organic solar cell donor material, organic solar cell and preparation method thereof |
| CN106410042B (en) * | 2016-11-16 | 2019-06-07 | 电子科技大学 | Organic solar batteries donor material, organic solar batteries and preparation method thereof |
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