CN106410337B - A kind of more transmission zero filters of single-chamber substrate integration wave-guide - Google Patents
A kind of more transmission zero filters of single-chamber substrate integration wave-guide Download PDFInfo
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- CN106410337B CN106410337B CN201610864455.7A CN201610864455A CN106410337B CN 106410337 B CN106410337 B CN 106410337B CN 201610864455 A CN201610864455 A CN 201610864455A CN 106410337 B CN106410337 B CN 106410337B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
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Abstract
The invention discloses a kind of more transmission zero filters of single-chamber substrate integration wave-guide, comprising: the topside metal layer stacked gradually, intermediate medium plate and bottom-side metal layer, input microstrip line, output microstrip line, bimodulus micro-strip resonantor, the interdigitated line of rabbet joint and vertical slot line are provided on topside metal layer, vertical slot line is arranged along the vertical centerline direction of topside metal layer, bimodulus micro-strip resonantor is connected with one end of vertical slot line, and the interdigitated line of rabbet joint and vertical slot line are arranged in a crossed manner；It is provided with metallization VIA on intermediate medium plate, forms substrate integration wave-guide chamber between intermediate medium plate and topside metal layer；Topside metal layer is used to obtain at least four transmission zeros in high-low side band.The more transmission zero filters of single-chamber substrate integration wave-guide of the invention, on the area basis for not increasing original circuit, only by loaded microstrip resonator, to realize specific coupling topology, at least four transmission zeros are obtained in high-low side band, substantially improve its frequency selectivity.
Description
Technical field
The present invention relates to the frequency selectivity component field in wireless mobile communications field, in particular to a kind of single-chamber substrate
The more transmission zero filters of integrated waveguide.
Background technique
With the fast development of mobile communication and satellite communication etc., higher want is proposed to microwave integrated circuit
It asks.Highly reliable equipment requirement microwave integrated circuit should reduce circuit occupancy while meeting electricity function index as far as possible
Area.
Now, with the development of communication technology, frequency resource is more and more nervous, non-renewable due to frequency spectrum resource,
The more aobvious key of the role of filter.In modern microwave communication system, especially in satellite communication and mobile communication system, to height
Quality factor (Q value), etc. time delays, the demand of narrow band filter with interior low insertion loss, with outer high rejection characteristic it is more next
It is bigger.Wherein high quality factor and etc. time delays the phase of signal will not be had an impact；Insertion Loss then will not be in mistake in lower band
Useful frequency spectrum is had an impact when filtering signal；Useless spectrum signal can then be inhibited with outer higher rejection characteristic,
So that the signal obtained is easier to be identified, will not be influenced by noise.
The microwave filter of general type, such as most flat (Butterworth) type and Chebyshev (Chebyscheff)
Mode filter is no longer satisfied these requirements.Oval or quasi- elliptic filters are due to it is with finite frequency transmission zero
There is preferable performance in passband and stopband, therefore is able to satisfy the increasing requirement of system.
Now, relatively low applied to mobile and wireless communication system frequency, so that microstrip filter is in circuit
More main status is occupied in design, this, which is primarily due to it, has the advantages that low cost, high quality factor, easy processing.
In traditional coupled resonator filter, need to introduce cross-coupling between non-conterminous resonator to obtain transmission zero,
This means that the number of the number resonator of zero point is directly proportional.Therefore, change by introducing multiple transmission zeros
While being apt to its frequency and select characteristic, can be caused due to the presence of multiple resonators circuit area increase and logical in-band insertion loss
Deteriorate.
It finds after being retrieved to existing substrate integral wave guide filter, in order to realize miniaturization, substrate is integrated
Waveguide vertical stacking, such as the filter delivered in TECHNOLOGY volume 55 of IEEE TRANS.ON MICROWAVE AND THEORY
Wave device (Design of vertically stacked waveguide filters in LTCC) text, passes through cascade four
Substrate integration wave-guide resonator obtains quasi- oblong nature, to achieve the purpose that improve sideband abruptness.However, its needs is more
Layer process is just able to achieve, and the parasitic character of passband is poor, inadequate for garbage signal, that is, noise degree of suppression.
Summary of the invention
The present invention is directed to above-mentioned problems of the prior art, proposes a kind of single-chamber substrate integral wave guide filter, In
On the area basis for not increasing original circuit, only by loaded microstrip resonator, to realize specific coupling topology, significantly
Improve its frequency selectivity.
In order to solve the above technical problems, the present invention is achieved through the following technical solutions:
The present invention provides a kind of single-chamber substrate integral wave guide filter comprising: the topside metal layer that stacks gradually, centre
Dielectric-slab and bottom-side metal layer, wherein
Input microstrip line, output microstrip line, bimodulus micro-strip resonantor, interdigital type groove are provided on the topside metal layer
Line and vertical slot line, the vertical slot line are arranged along the vertical centerline direction of the topside metal layer, the bimodulus micro-strip
Resonator is connected with one end of the vertical slot line, and the interdigitated line of rabbet joint and the vertical slot line are arranged in a crossed manner；
Metallization VIA, shape between the intermediate medium plate and the topside metal layer are provided on the intermediate medium plate
At substrate integration wave-guide chamber；
The topside metal layer is used to obtain at least four transmission zeros in high-low side band.
Preferably, the bimodulus micro-strip resonantor includes: two split ring resonators, two split ring resonators are in T word
Type arrangement.
Preferably, the bimodulus micro-strip resonantor is symmetrical about the vertical centerline of the topside metal layer.
Preferably, the vertical centerline pair of the input microstrip line and the output microstrip line about the topside metal layer
Claim.
Preferably, the interdigitated line of rabbet joint and the vertical slot line square crossing are arranged.
Preferably, one end of the input microstrip line and the output microstrip line is hanging, surveyed for welding sub-miniature A connector
Examination.
Preferably, the length and width of the vertical slot line is used to control the degree of suppression of harmonics restraint.
Preferably, the length and width of the interdigital line of rabbet joint is used to control the position of the transmission zero.
Preferably, the length and width of the dual-mode resonator is used to control the band of single-chamber substrate integral wave guide filter
It is wide.
Preferably, the bimodulus micro-strip shape is formed by the etching topside metal layer.
Compared to the prior art, the invention has the following advantages that
(1) the more transmission zero filters of single-chamber substrate integration wave-guide provided by the invention, in the face for not increasing original circuit
On the basis of product, only by loaded microstrip resonator, to realize specific coupling topology, the selection of its frequency is substantially improved
Property；
(2) the more transmission zero filters of single-chamber substrate integration wave-guide of the invention respectively obtain at least two in high-low side band
A transmission zero obtains second transmission zero in upper sideband, is inhibited to first parasitic passband, i.e., of the invention
Filter has preferable harmonic responses simultaneously；
(3) micro-strip resonantor in the present invention, by etching the metal layer realization of substrate integration wave-guide upper surface, therefore,
This circuit structure has the advantages that at low cost, simple and easy to do.
Certainly, it implements any of the products of the present invention and does not necessarily require achieving all the advantages described above at the same time.
Detailed description of the invention
Embodiments of the present invention are described further with reference to the accompanying drawing:
Fig. 1 is the structural schematic diagram of the more transmission zero filters of single-chamber substrate integration wave-guide of the embodiment of the present invention；
Fig. 2 is the birds-eye perspective of the more transmission zero filters of single-chamber substrate integration wave-guide of the embodiment of the present invention；
Fig. 3 is the size indication figure of the more transmission zero filters of single-chamber substrate integration wave-guide of the embodiment of the present invention；
When Fig. 4 is the L5 variation in Fig. 3 of the embodiment of the present invention, the transmission of the input port of filter to output port
Characteristic curve | S21 | situation of change；
When Fig. 5 is L2, L7 variation in Fig. 3 of the embodiment of the present invention, the input port of filter to output port
Transfer curve | S21 | situation of change；
When Fig. 6 is the L7 variation in Fig. 3 of the embodiment of the present invention, the transmission of the input port of filter to output port
Characteristic curve | S21 | situation of change；
When Fig. 7 is the diff variation in Fig. 3 of the embodiment of the present invention, the biography of the input port of filter to output port
Defeated characteristic curve | S21 | situation of change；
Fig. 8 is the input port of the embodiment of the present invention to the transfer curve of input port | S11 | and input port
To the transfer curve of output port | S21 | situation of change；
Fig. 9 be the embodiment of the present invention input port to output port transfer curve | S21 | situation of change.
Label declaration: 1- topside metal layer, 2- intermediate medium plate, 3- bottom-side metal layer, 4- substrate integration wave-guide chamber；
11- inputs microstrip line, and 12- exports microstrip line, 13- bimodulus micro-strip resonantor, the interdigitated line of rabbet joint of 14-, 15- vertical channel
Line；
131- resonant ring, 132- resonant ring；
21- metallization VIA.
Specific embodiment
It elaborates below to the embodiment of the present invention, the present embodiment carries out under the premise of the technical scheme of the present invention
Implement, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to following implementation
Example.
In conjunction with Fig. 1-Fig. 9, the more transmission zero filters of single-chamber substrate integration wave-guide of the invention are described in detail,
Structural schematic diagram as shown in Figure 1, as Fig. 2 be Fig. 1 birds-eye perspective comprising: stack gradually setting topside metal layer 1,
Intermediate medium plate 2 and bottom-side metal layer 3.Wherein, the metallization along the distribution of edge array is provided in intermediate medium version 2
Hole, by forming substrate integration wave-guide chamber 4 between metallization VIA and topside metal layer 1.Input is provided on topside metal layer 1
Microstrip line 11, output microstrip line 12, bimodulus micro-strip resonantor 13, the interdigitated line of rabbet joint 14 and vertical slot line 15, vertical slot line 15
It is arranged along the vertical centerline direction of topside metal layer, bimodulus micro-strip resonantor 13 is connected with one end of vertical slot line 15, interdigital
Type groove line 14 and vertical slot line 15 are arranged in a crossed manner.
The present embodiment obtains additional transmission zero in high-low side band by the setting of the interdigitated line of rabbet joint and vertical slot line
Point respectively obtains at least two transmission zeros in high-low side band, obtains second transmission zero in upper sideband, posts first
Raw passband is inhibited, and makes the filter while having preferable harmonic responses；And in the face for not increasing original circuit
On the basis of product, only by load bimodulus micro-strip resonantor, to realize specific coupling topology, the choosing of its frequency is substantially improved
Selecting property.
In the present embodiment, the one end for inputting microstrip line 11 and output microstrip line 12 is hanging, is surveyed for welding sub-miniature A connector
Examination.
As can be seen from Figure 2, in the present embodiment, the interdigitated line of rabbet joint 14 and vertical slot line 15 are square crossing setting；Bimodulus is micro-
Band resonator 13 include two split ring resonators 131,132, split ring resonator 131 and 132 in T font arrange, and 131 and vertically
15 vertical distribution of the line of rabbet joint, bimodulus micro-strip resonantor 13 are symmetric about the vertical centerline (i.e. Y-axis) of topside metal layer 1；
Input microstrip line 11 and output microstrip line 12 are symmetric about the vertical centerline of topside metal layer 1, and setting can in this way
Design variable is reduced, structure optimization is convenient for.
The size of each structure of the topside metal layer of the more transmission zero filters of single-chamber substrate integration wave-guide is to filter
Every characteristic has very big influence, below by influence of the size of each structure to filter is analyzed, can be tied according to analysis
Structure is suitably sized to be arranged, and has obtained ideal filter.It is illustrated in figure 3 the size mark of each structure on topside metal layer
Diagram, wherein marking: the right side brachium L1 of resonant ring 132, the length L2 of vertical slot line, output microstrip line are provided with protrusion
One end to metallization VIA distance L3, export microstrip line 12 one end setting protrusion vertical height L4, resonant ring 131
Length L5, the left and right sides metallization VIA between horizontal distance L6 and the interdigitated line of rabbet joint 14 horizontal length L7, also
Have: the input width wid of microstrip line 11, resonant ring 132 center the distance between to the horizontal center line of topside metal layer 1
Diff and output microstrip line 12 arrive the distance between the horizontal center line of topside metal layer 1 diff2.These above-mentioned parameters are all right
The characteristic of filter has a certain impact, and can select according to different requirements, suitably sized.
Horizontal distance L6 between the metallization VIA of the left and right sides has centainly the resonance frequency of substrate integration wave-guide chamber
Influence, can according to need frequency selection it is suitably sized；
The right side brachium L1 of the resonant ring 132 and length L5 of resonant ring 131 can influence the resonance frequency of dual-mode resonator
Rate, namely the bandwidth of control filter, can according to need selection suitably sized makes its work in specific frequency；Such as Fig. 4
When giving L5 variation, the transfer curve of the input port of filter to output port | S21 | situation of change, it can be seen that
L5 is smaller, then bandwidth is bigger；
It exports microstrip line 12 and can control transmission zero to the distance between the horizontal center line of topside metal layer 1 diff2
In the position of high-low side band；
The length L2 of vertical slot line 15 is mainly used for controlling the degree of suppression of parasitic passband, as Fig. 5 gives L2, L7 variation
When, the transfer curve of the input port of filter to output port | S21 | situation of change, it can be seen that when L2 is 5mm,
Parasitic passband is suppressed；
The horizontal length L7 of the interdigitated line of rabbet joint 14, for realizing the stiffness of coupling between input port and output port,
That is control transmission zero is in the position of high-low side band, when giving L7 variation such as Fig. 6, the input port of filter to output port
Transfer curve | S21 | situation of change, it can be seen that with the reduction of L7, third transmission zero location is to high frequency displacement
It is dynamic；
The center of resonant ring 132 is also used for control transmission to the distance between the horizontal center line of topside metal layer 1 diff
Zero point is in the position of high-low side band, and when giving diff variation such as Fig. 7, the transmission of input port to the output port of filter is special
Linearity curve | S21 | situation of change, it can be seen that against diff reduce, first and second transmission zero degree of suppression be lower respectively and
It gets higher, while third and fourth transmission zero is mobile to low frequency.
The narrow band transmission and return loss that Fig. 8 gives test are as a result, Fig. 8 is transmission spy of the input port to input port
Linearity curve | S11 | and input port is to the transfer curve of output port | S21 | situation of change, available two pairs of transmission
Zero point is located at high and low sideband, substantially improves its frequency selectivity.Fig. 9 is the input port in Fig. 8 to output port
Transfer curve | S21 | complete graph, that is, give the broadband frequency response of the filter, pass through the suppression of the 4th transmission zero
First parasitic passband has been made, its stopband characteristic is substantially improved.
Disclosed herein is merely a preferred embodiment of the present invention, these embodiments are chosen and specifically described to this specification, is
Principle and practical application in order to better explain the present invention is not limitation of the invention.Anyone skilled in the art
The modifications and variations done within the scope of specification should all be fallen in the range of of the invention protect.
Claims (6)
1. a kind of single-chamber substrate integral wave guide filter characterized by comprising the topside metal layer that stacks gradually intermediate is situated between
Scutum and bottom-side metal layer, wherein
Be provided on the topside metal layer input microstrip line, output microstrip line, bimodulus micro-strip resonantor, the interdigitated line of rabbet joint with
And vertical slot line, the vertical slot line are arranged along the vertical centerline direction of the topside metal layer, the bimodulus micro-band resonance
Device is connected with one end of the vertical slot line, and the interdigitated line of rabbet joint and the vertical slot line are arranged in a crossed manner；
The bimodulus micro-strip resonantor is formed by the etching topside metal layer, and the bimodulus micro-strip resonantor includes: two
Split ring resonator, two split ring resonators are arranged in T font；
Metallization VIA, the intermediate medium plate and the topside metal layer and the bottom surface are provided on the intermediate medium plate
Substrate integration wave-guide chamber is formed between metal layer；
The topside metal layer is used to obtain at least four transmission zeros in high-low side band；
The length and width of the vertical slot line is used to control the degree of suppression of harmonics restraint；
The length and width of the interdigital line of rabbet joint is used to control the position of the transmission zero.
2. single-chamber substrate integral wave guide filter according to claim 1, which is characterized in that the bimodulus micro-strip resonantor
Vertical centerline about the topside metal layer is symmetrical.
3. single-chamber substrate integral wave guide filter according to claim 1, which is characterized in that the input microstrip line and institute
It is symmetrical about the vertical centerline of the topside metal layer to state output microstrip line.
4. single-chamber substrate integral wave guide filter according to claim 1, which is characterized in that the interdigitated line of rabbet joint and institute
State vertical slot line square crossing setting.
5. single-chamber substrate integral wave guide filter according to claim 1, which is characterized in that the input microstrip line and institute
The one end for stating output microstrip line is hanging, is tested for welding sub-miniature A connector.
6. single-chamber substrate integral wave guide filter according to claim 1, which is characterized in that the bimodulus micro-strip resonantor
Length and width be used to control the bandwidth of single-chamber substrate integral wave guide filter.
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| CN109149028A (en) * | 2018-07-02 | 2019-01-04 | 杭州电子科技大学 | The four mould dual frequency filters based on single rectangle SIW structure |
| CN109103555B (en) * | 2018-07-19 | 2020-03-20 | 杭州电子科技大学 | Three-band filter based on SIW structure |
| CN108987860B (en) * | 2018-09-03 | 2023-11-24 | 南京林业大学 | SIW plane filter |
| CN109301412B (en) * | 2018-10-24 | 2024-04-09 | 江南大学 | Three-passband filter based on hybrid substrate integrated waveguide structure |
| CN110544812B (en) * | 2019-07-18 | 2021-03-23 | 南通职业大学 | Substrate integrated dielectric resonator and antenna |
| CN111342186B (en) * | 2020-03-05 | 2021-07-20 | 东北大学秦皇岛分校 | Cross-shaped coupling resonator |
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| US7808439B2 (en) * | 2007-09-07 | 2010-10-05 | University Of Tennessee Reserch Foundation | Substrate integrated waveguide antenna array |
| CN203085713U (en) * | 2013-02-25 | 2013-07-24 | 成都信息工程学院 | Substrate integrated waveguide dual-mode wave filter |
| CN103326093A (en) * | 2013-04-19 | 2013-09-25 | 上海大学 | Novel cross coupling substrate integrated waveguide band-pass filter |
| CN103413998A (en) * | 2013-08-09 | 2013-11-27 | 电子科技大学 | Single-cavity double-die hexagonal substrate integrated waveguide filter |
| CN105098301B (en) * | 2015-07-23 | 2018-05-08 | 南京航空航天大学 | A kind of double-passband filter based on SIW loading H-type gap structures |
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