CN105098301B - A kind of double-passband filter based on SIW loading H-type gap structures - Google Patents
A kind of double-passband filter based on SIW loading H-type gap structures Download PDFInfo
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Abstract
The invention discloses a kind of double-passband filter based on SIW loading H-type gap structures, including two SIW chambers resonators and co-planar waveguide, the both ends of described two SIW chambers resonators are connected with input/output terminal respectively by co-planar waveguide, and H-type gap structure is loaded directly over the coupling window of two SIW chamber resonators.The present invention has a dual-passband, dual transfer zero, high selectivity, it is compact-sized easy to process the features such as.
Description
Technical field
The present invention relates to a kind of double-passband filter, belong to wireless communication technology field.
Background technology
Since frequency spectrum resource is limited, particularly low with microwave frequency band section of radio frequency is it may be said that arrived what is had too many difficulties to cope with
Stage, therefore single frequency band communication system has seemed outmoded, cannot meet the needs of wireless communication well, communicates to higher frequency range
Development, but at the same time can compatible used various communications band resources double frequency and Multi-Frequency Signaling System be the one of wireless communication from now on
A developing direction.In order to make full use of existing frequency spectrum and infrastructure device resource, set what can be worked at the same time in a communications system
One of multiple communications bands, effective way are exactly to research and develop high performance two-band microwave filter.Two-band microwave is filtered
Ripple device, is to handle the signal of two wave bands with a double frequency segment unit, this design concept provides basis easy to implement
Facility and high performance product.System can be substantially reduced using the two-band wave filter with single port input single port output
Volume, improves system reliability, therefore two-band wave filter has become the wireless telecom equipment of microwave frequency band in communication equipment
In critical elements.
《The research of microwave twin band pass filter and progress》(Jiaotong University Of East China's journal, in April, 2010, volume 27 the 2nd
Phase) situation that double-passband filter is realized using double resonator method is described in a text.Wherein embedded method is primarily due to two points
One of wave resonator can produce bilateral effect, and the resonance of high frequency pass band in the difference of two different frequency range guide wavelengths
Device physical size is smaller, can substantially reduce volume by the way of embedded, the drawback is that the coupling of interior external resonator with it is double
There may be contradiction in adjusting for two centre frequencies of band requirement.
The content of the invention
Goal of the invention：In order to overcome the deficiencies in the prior art, the present invention provides a kind of based on SIW loading H-type seams
The double-passband filter of gap structure, has a dual-passband, dual transfer zero, high selectivity, it is compact-sized easy to process the features such as.
Technical solution：To achieve the above object, the technical solution adopted by the present invention is：
A kind of double-passband filter based on SIW loading H-type gap structures, including two SIW chambers resonators and coplanar ripple
Lead, the both ends of described two SIW chambers resonators are connected with input/output terminal respectively by co-planar waveguide, in two SIW chamber resonance
Loading H-type gap structure directly over the coupling window of device.
Further, described two SIW chambers resonators are that left and right sets some plated-through holes respectively on medium substrate
It is enclosed, is the first SIW chamber resonators positioned at left side, is the 2nd SIW chamber resonators positioned at right side.
Further, the diameter of the plated-through hole is consistent, and the spacing between adjacent metal through hole is identical.
Further, the medium substrate includes dielectric substrate, upper metal layers and lower metal layer, the dielectric substrate
It is arranged between upper metal layers and lower metal layer.
Further, the co-planar waveguide is in upper metal layers by opening up first line of rabbet joint, second line of rabbet joint, and on upper strata
Metal layer opens up third slot line, the 4th line of rabbet joint is formed, and first feeder line passes through first line of rabbet joint and second line of rabbet joint and the first SIW chambers
Resonator left side central portion connects, and second feeder line passes through in third slot line and the 4th line of rabbet joint and the 2nd SIW chambers resonator right side
Portion connects.
Further, first line of rabbet joint, second line of rabbet joint, third slot line and the 4th line of rabbet joint are respectively in the upper of medium substrate
The L-shaped groove opened up on layer metal layer, first feeder line and the second feeder line are respectively the strip gold set on dielectric substrate
Belong to layer.
Further, setting transversal centerline on medium substrate, as y-axis, longitudinal midline is x-axis, first feeder line and second
Feeder line is symmetrical on x-axis, and first line of rabbet joint and second line of rabbet joint are symmetrical on y-axis, and third slot line and the 4th line of rabbet joint are symmetrical on y-axis,
First line of rabbet joint and third slot line are symmetrical on x-axis, and second line of rabbet joint and the 4th line of rabbet joint are symmetrical on x-axis.
Further, the characteristic impedance between first feeder line and the second feeder line is 50 ohm.
Further, the H-type gap structure includes the 5th line of rabbet joint, the 6th line of rabbet joint and the 7th line of rabbet joint, the 5th line of rabbet joint
It is arranged in parallel in the 7th line of rabbet joint directly over coupling window, the 5th line of rabbet joint and the 7th line of rabbet joint are symmetrical on y-axis, and the described 6th
The line of rabbet joint is vertically set on the center line between the 5th line of rabbet joint and the 7th line of rabbet joint.
Beneficial effect：Double-passband filter of the present invention is real by loading H-type gap structure directly over coupling window
It is existing, do not increase additional volumes, while realize second passband, not only the performance indicator of first passband is influenced less, may be used also
One transmission zero is produced with the stopband up and down in second passband respectively, makes second passband that there is high selectivity, two logical
The center of band and bandwidth can respective flexible modulation, in addition total is simple, easy to process.
Brief description of the drawings
Fig. 1 is the schematic diagram that the present invention uses medium substrate.
Fig. 2 is the structure diagram of the present invention.
Fig. 3 is topological schematic diagram of the invention.
Fig. 4 is scattering parameter emulation and the test result figure of the present invention.
Embodiment
The present invention is further described below in conjunction with the accompanying drawings.
The present invention provide it is a kind of based on SIW loading H-type gap structure double-passband filter, use relative dielectric constant for
2.2, the pcb board that thickness is 0.508mm can also use the pcb board of other specifications as medium substrate as medium substrate.Such as
Fig. 1, the medium substrate include dielectric substrate 11, upper metal layers 12 and lower metal layer 13, and the dielectric substrate 11 is set
Between upper metal layers 12 and lower metal layer 13.The upper metal layers 12 that the medium substrate upper strata is covered with, are to be used to open
If first line of rabbet joint 21, second line of rabbet joint 22, third slot line 23, the 4th line of rabbet joint 24, the 5th line of rabbet joint 25, the 6th line of rabbet joint 26 and the 7th line of rabbet joint
27；The medium substrate lower floor is covered with lower metal layer 13, the ground as whole wave filter.The plated-through hole runs through upper strata
Metal layer 12, dielectric substrate 11 and lower metal layer 13.The diameter of the plated-through hole is consistent, is 0.6mm, adjacent metal
The spacing changed between through hole is identical, is 1mm.
Include two SIW chambers resonators and co-planar waveguide on medium substrate, the both ends of described two SIW chambers resonators pass through
Co-planar waveguide is connected with input/output terminal respectively, and H-type gap knot is loaded directly over the coupling window of two SIW chamber resonators
Structure.
Described two SIW chambers resonators are that left and right sets some plated-through holes to be enclosed respectively on medium substrate,
It is the first SIW chamber resonators positioned at left side, is the 2nd SIW chamber resonators positioned at right side.Wherein, each SIW chambers resonator
In the long 26mm in x-axis direction, the wide 22.8mm in y-axis direction.
First line of rabbet joint 21, second line of rabbet joint 22,23 and the 4th line of rabbet joint 24 of third slot line are respectively in the upper of medium substrate
The L-shaped groove opened up on layer metal layer 12,31 and second feeder line 32 of the first feeder line are respectively to be set on dielectric substrate 11
Strip metal layer.The co-planar waveguide in upper metal layers 12 by opening up first line of rabbet joint 21, second line of rabbet joint 22, and upper
Metal layer 12 opens up third slot line 23 to layer, the 4th line of rabbet joint 24 is formed, and first feeder line 31 passes through first line of rabbet joint 21 and the second groove
Line 22 is connected with the first SIW chamber resonator left side central portions, second feeder line 32 by 23 and the 4th line of rabbet joint 24 of third slot line with
2nd SIW chamber resonators right side central connects.Characteristic impedance between first feeder line, 31 and second feeder line 32 is 50 ohm.
Setting transversal centerline on medium substrate, as y-axis, longitudinal midline is x-axis, 31 and second feeder line 32 of the first feeder line
Symmetrical on x-axis, first line of rabbet joint 21 and second line of rabbet joint 22 are symmetrical on y-axis, and 23 and the 4th line of rabbet joint 24 of third slot line is on y-axis pair
Claim, first line of rabbet joint 21 and third slot line 23 are symmetrical on x-axis, and second line of rabbet joint 22 and the 4th line of rabbet joint 24 are symmetrical on x-axis.
The H-type gap structure includes the 5th line of rabbet joint 25, the 6th line of rabbet joint 26 and the 7th line of rabbet joint 27,25 He of the 5th line of rabbet joint
7th line of rabbet joint 27 is arranged in parallel in directly over coupling window, and the 5th line of rabbet joint 25 and the 7th line of rabbet joint 27 are symmetrical on y-axis, described
6th line of rabbet joint 26 is vertically set on the center line between the 5th line of rabbet joint 25 and the 7th line of rabbet joint 27.Wherein, the 5th line of rabbet joint 25 and the 7th
The line of rabbet joint 27 long 14.5mm, 26 long 1.5mm of the 6th line of rabbet joint.
Equivalent to two U-shaped resonators of the H-type gap structure loaded, wherein the 5th line of rabbet joint 25 of positive y-direction, positive y side
To the 7th line of rabbet joint 27 and the 6th line of rabbet joint 26 constitute a U-shaped resonator, the 5th line of rabbet joint 25 of negative y-direction, the of negative y-direction
Seven line of rabbet joint 27 and the 6th line of rabbet joint 26 constitute another U-shaped resonator, the two U-shaped resonators embedded in two SIW chamber resonance
Device, second passband of shape under the action of the two U-shaped resonators.
While two U-shaped resonators produce second passband, generated between two SIW chamber resonators and intersect coupling
Close, generate two transmission zeros so that the edge of second passband is very precipitous, has high selectivity.
As shown in figure 3, " S " is signal source, " L " is load.Due in addition introducing two U-shaped resonators so that originally
Two SIW chambers resonators and two U-shaped resonators between form cross-couplings, generate two transmission zeros, exist respectively
6.55GHz and 7.8GHz, improves the selectivity of second passband.
As shown in figure 4, the scattering parameter emulation of the present invention and measured result.The double-passband filter centre frequency difference
Exist for 5.2GHz and 7GHz, its 10dB relative bandwidth is respectively 4% and 3%, as we can see from the figure emulation and measured result base
This coincide, and wherein the insertion loss of measurement error is slightly bigger than normal is derived from the spoke of mismachining tolerance and slotted line during the test
Penetrate loss.
The above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (4)
1. a kind of double-passband filter based on SIW loading H-type gap structures, including two SIW chambers resonators and co-planar waveguide,
The both ends of described two SIW chambers resonators are connected with input/output terminal respectively by co-planar waveguide, it is characterised in that：At two
Loading H-type gap structure directly over the coupling window of SIW chamber resonators；Described two SIW chambers resonators are on medium substrate
Left and right sets some plated-through holes to be enclosed respectively, is the first SIW chamber resonators positioned at left side, is positioned at right side
Two SIW chamber resonators；The diameter of the plated-through hole is consistent, and the spacing between adjacent metal through hole is identical；It is described
Medium substrate includes dielectric substrate (11), upper metal layers (12) and lower metal layer (13), sets on medium substrate in transverse direction
Line is y-axis, and longitudinal midline is x-axis, the dielectric substrate (11) be arranged on upper metal layers (12) and lower metal layer (13) it
Between；The H-type gap structure includes the 5th line of rabbet joint (25), the 6th line of rabbet joint (26) and the 7th line of rabbet joint (27), the 5th line of rabbet joint
(25) be arranged in parallel in the 7th line of rabbet joint (27) directly over coupling window, the 5th line of rabbet joint (25) and the 7th line of rabbet joint (27) on
Y-axis is symmetrical, and the 6th line of rabbet joint (26) is vertically set on the center line between the 5th line of rabbet joint (25) and the 7th line of rabbet joint (27).
A kind of 2. double-passband filter based on SIW loading H-type gap structures according to claim 1, it is characterised in that：Institute
Co-planar waveguide is stated by opening up first line of rabbet joint (21), second line of rabbet joint (22) in upper metal layers (12), and in upper metal layers
(12) third slot line (23), the formation of the 4th line of rabbet joint (24) are opened up, the first feeder line (31) and the second feeder line (32) are respectively in medium
The strip metal layer set on substrate (11), first feeder line (31) pass through first line of rabbet joint (21) and second line of rabbet joint (22) and the
One SIW chamber resonators left side central portion connects, and second feeder line (32) passes through third slot line (23) and the 4th line of rabbet joint (24) and the
Two SIW chamber resonators right side centrals connect, first line of rabbet joint (21), second line of rabbet joint (22), third slot line (23) and the 4th groove
Line (24) is respectively the L-shaped groove opened up in the upper metal layers (12) of medium substrate.
A kind of 3. double-passband filter based on SIW loading H-type gap structures according to claim 2, it is characterised in that：If
It is y-axis to determine transversal centerline on medium substrate, and longitudinal midline is x-axis, and first feeder line (31) and the second feeder line (32) are on x-axis
Symmetrically, first line of rabbet joint (21) and second line of rabbet joint (22) are symmetrical on y-axis, and third slot line (23) and the 4th line of rabbet joint (24) are on y-axis
Symmetrically, first line of rabbet joint (21) and third slot line (23) are symmetrical on x-axis, and second line of rabbet joint (22) and the 4th line of rabbet joint (24) are on x-axis
Symmetrically.
A kind of 4. double-passband filter based on SIW loading H-type gap structures according to claim 3, it is characterised in that：Institute
The characteristic impedance for stating the first feeder line (31) and the second feeder line (32) is 50 ohm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510438047.0A CN105098301B (en) | 2015-07-23 | 2015-07-23 | A kind of double-passband filter based on SIW loading H-type gap structures |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105449322B (en) * | 2015-11-30 | 2018-01-23 | 超视距成都科技有限责任公司 | Millimeter wave double-passband filter and its design method |
| CN106410337B (en) * | 2016-09-29 | 2019-11-12 | 上海航天测控通信研究所 | A kind of more transmission zero filters of single-chamber substrate integration wave-guide |
| CN110416674B (en) * | 2019-08-22 | 2024-03-22 | 华东师范大学 | Single-cavity double-frequency-band microwave filter based on coplanar waveguide |
| CN114335937B (en) * | 2021-12-20 | 2023-05-09 | 南京邮电大学 | Substrate integrated cavity slow wave hybrid electromagnetic coupling filter |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2796130Y (en) * | 2005-06-08 | 2006-07-12 | 东南大学 | Low resistance-high resistance short microstrip line substrte integrated cavity filter |
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| KR100716156B1 (en) * | 2005-10-31 | 2007-05-10 | 엘지이노텍 주식회사 | Ultra-Wideband Band pass filter using Low temperature co-fired ceramic |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2796130Y (en) * | 2005-06-08 | 2006-07-12 | 东南大学 | Low resistance-high resistance short microstrip line substrte integrated cavity filter |
Non-Patent Citations (1)
| Title |
|---|
| "Single-Layered SIW Post-Loaded Electric Coupling-Enhanced Structure and Its Filter Applications";Chang Jiang You 等;《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》;20130117;第61卷(第1期);第125-130页 * |
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