CN106409826B - 瞬态电压抑制器及其制造方法 - Google Patents
瞬态电压抑制器及其制造方法 Download PDFInfo
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- CN106409826B CN106409826B CN201610949003.9A CN201610949003A CN106409826B CN 106409826 B CN106409826 B CN 106409826B CN 201610949003 A CN201610949003 A CN 201610949003A CN 106409826 B CN106409826 B CN 106409826B
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- 230000001052 transient effect Effects 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims abstract description 4
- 239000007924 injection Substances 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 230000005611 electricity Effects 0.000 claims description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 7
- 238000002955 isolation Methods 0.000 abstract description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000035755 proliferation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610949003.9A CN106409826B (zh) | 2016-10-26 | 2016-10-26 | 瞬态电压抑制器及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610949003.9A CN106409826B (zh) | 2016-10-26 | 2016-10-26 | 瞬态电压抑制器及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106409826A CN106409826A (zh) | 2017-02-15 |
CN106409826B true CN106409826B (zh) | 2019-06-25 |
Family
ID=58014036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610949003.9A Active CN106409826B (zh) | 2016-10-26 | 2016-10-26 | 瞬态电压抑制器及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN106409826B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10903204B2 (en) | 2018-07-24 | 2021-01-26 | Amazing Microelectronic Corp. | Lateral transient voltage suppressor device |
CN109244069B (zh) * | 2018-09-19 | 2020-12-15 | 浙江昌新生物纤维股份有限公司 | 瞬态电压抑制器及其制备方法 |
CN111180526B (zh) * | 2018-11-09 | 2023-09-12 | 无锡力芯微电子股份有限公司 | 瞬态电压抑制器及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102306649A (zh) * | 2011-08-24 | 2012-01-04 | 浙江大学 | 一种双向双通道的瞬态电压抑制器 |
US8785971B2 (en) * | 2011-11-23 | 2014-07-22 | Amazing Microelectronic Corp. | Transient voltage suppressor without leakage current |
KR101607207B1 (ko) * | 2014-12-23 | 2016-03-29 | 주식회사 케이이씨 | 과도 전압 억제 소자 및 그 제조 방법 |
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2016
- 2016-10-26 CN CN201610949003.9A patent/CN106409826B/zh active Active
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CN106409826A (zh) | 2017-02-15 |
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CP03 | Change of name, title or address |
Address after: No.385, Hongcao Road, Xuhui District, Shanghai 200233 Patentee after: SHANGHAI ADVANCED SEMICONDUCTO Address before: No.385, Hongcao Road, Xuhui District, Shanghai 200233 Patentee before: ADVANCED SEMICONDUCTOR MANUFACTURING Co.,Ltd. |
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CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210508 Address after: 200120 No.600 Yunshui Road, Pudong New Area, Shanghai Patentee after: GTA Semiconductor Co.,Ltd. Address before: No.385, Hongcao Road, Xuhui District, Shanghai 200233 Patentee before: SHANGHAI ADVANCED SEMICONDUCTO |
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TR01 | Transfer of patent right |