CN106384749A - Pressure sensor and making method thereof - Google Patents
Pressure sensor and making method thereof Download PDFInfo
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- CN106384749A CN106384749A CN201610929260.6A CN201610929260A CN106384749A CN 106384749 A CN106384749 A CN 106384749A CN 201610929260 A CN201610929260 A CN 201610929260A CN 106384749 A CN106384749 A CN 106384749A
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000002033 PVDF binder Substances 0.000 claims abstract description 81
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims abstract description 81
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims description 57
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 7
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 claims description 5
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 claims 1
- 240000002853 Nelumbo nucifera Species 0.000 claims 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 description 10
- 230000010287 polarization Effects 0.000 description 6
- 230000006698 induction Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention relates to a pressure sensor and a making method thereof. An epitaxial layer grown on a silicon carbide SiC substrate layer comprises a GaN channel layer and an AlGaN cap layer on the GaN channel layer, and a 2DEG channel is formed between the AlGaN cap layer and the GaN channel layer. A source and a drain are formed on the AlGaN cap layer. A beta PVDF film polarized at high voltage is arranged at a gate position of the AlGaN cap layer. By fully integrating the characteristics of PVDF and HEMT, the sensing sensitivity of the novel hetero-junction pressure sensor can be improved effectively.
Description
Technical field
The invention belongs to microelectronics technology is and in particular to a kind of pressure sensor and preparation method thereof.
Background technology
Developing rapidly along with technology of Internet of things, the rise of wearable intelligent medical equipment, the demand in market drives
The developing rapidly of technology.Market proposes new requirement to pressure sensor, more high sensitivity, smaller volume, higher environment
Adaptability, as the more stringent standard of sensor field.Traditional pressure sensor based on mechanical pressure sensors,
Later along with the development of MEMS technology and semiconductor technology, the condenser type based on silicon, resistive memory pressure sensing
Device, the development to sensor creates great impetus.
Polarization material has a wide range of applications in responsive type pressure sensor, such as barium titanate BT, piezoelectric ceramics（Zirconium metatitanic acid
Lead）PZT, Kynoar PVDF etc..Since PVDF be born since, with good pliability, low-density, Low ESR and well-known.
Because it is of many uses, PVDF in low cost, repeatable pressure sensor aspect extensive application.
Recently, the AlGaN/GaN high electron mobility of high carrier concentration is produced by piezoelectricity and spontaneous polarization effect
Transistor（HEMT）, show huge application potential in chemistry and field of biosensors, unlike traditional FET,
This device has no doping deliberately.In HEMT device, electronics is limited in the 2DEG between AlGaN/GaN two-layer（Two
Dimensional electron gas）Among raceway groove, create a large amount of positive charges in the surface 2DEG induction of HEMT.The slight change of HEMT surface external force
The change of HEMT surface charge just can be had influence on, and then impact is produced on the two-dimensional electron gas in raceway groove.Based on nitridation HEMT
With the above feature of PVDF, they combine formation more high sensitivity, more miniature pressure sensor become worth
The research topic inquired into.
Content of the invention
The present invention fully combines PVDF and the feature of modern HEMT device, and proposition is a kind of can to improve the new of induction sensitivity
Type hetero-junctions pressure sensor and preparation method thereof.
In order to achieve the above object, a technical scheme of the present invention is to provide a kind of preparation method of β type PVDF thin film,
Wherein：
The sample of β type PVDF thin film is placed on copper substrate, and is immersed in perfluorotributylamine solution；
One copper cash is suspended in the top of the sample of described β type PVDF thin film, and described copper cash is connected with dc source, to described β type
The sample of PVDF thin film applies high pressure, obtains β type PVDF thin film.
Preferably, the temperature of described perfluorotributylamine solution keeps 70 DEG C；Copper wire diameter is 0.2mm；Copper cash is suspended in described β
At the top 1cm of the sample of type PVDF thin film；The voltage of dc source is 10kV.
Preferably, formed in the mixing addition DMA of the PMMA and PVDF powder stock of 10wt% is molten
Liquid, obtains the sample of described β type PVDF thin film by crystallization.
Another technical scheme of the present invention is to provide a kind of preparation method of pressure sensor, wherein：
Grow unadulterated GaN channel layer on sic substrates, and grow unadulterated on described GaN channel layer
Al0.25Ga0.75N cap layers；
Carry out mesa-isolated, and in described Al0.25Ga0.75In N cap layers, etching forms source electrode and the design attitude of drain electrode；Corresponding
Design attitude deposited metal layer, formed source electrode and drain contact electrode；
With positive polarity photoresist as mask, determine described Al through photoetching process0.25Ga0.75Gate location in N cap layers；Described
β type PVDF thin film is arranged on gate location.
Preferably, the described β type PVDF thin film being prepared by above-mentioned any one method, arranges described grid position
Put.
Preferably, the first surface of described β type PVDF thin film is positively charged, and the second surface band relative with first surface is born
Electric charge, wherein this first surface are close to described Al0.25Ga0.75The upper surface of N cap layers；Or, the of described β type PVDF thin film
One surface is positively charged, and the second surface relative with first surface is negatively charged, wherein this second surface be close to described
Al0.25Ga0.75The upper surface of N cap layers.
Preferably, unadulterated GaN channel layer and unadulterated Al0.25Ga0.75N cap layers, are given birth to by molecular beam epitaxy technique
Long；
Utilize inductively coupled plasma technology in argon gas, the design attitude of source electrode and drain electrode is performed etching, inductive
The technological parameter of plasma technique comprises power 300W, frequency 2MHz, -90V automatic bias, pressure 5mTorr；
Using electron beam deposition technique, at 850 DEG C, the nitrogen N of flowing2Middle through 50s, carry out in depositing Ti/Al/Pt/Au
Plant the alloy of metal or various metals, form source electrode and the contact electrode of drain electrode；
Described Al0.25Ga0.75A size of 10 × 50 μm of gate location in N cap layers；
Size adjusting is carried out to the β type PVDF thin film at described gate location by micro- plotter.
Preferably, the thickness of described GaN channel layer is 2 μm；Described Al0.25Ga0.75The thickness of N cap layers is 250nm；In grid
β type PVDF thin film at the position of pole, the thickness when not stressing is 2 μm.
Another technical scheme of the present invention is to provide a kind of pressure sensor, wherein：
Described pressure sensor is provided with SiC substrate layer；
On described substrate layer, the epitaxial layer of growth, comprises the AlGaN cap layers on GaN channel layer and this GAN channel layer, described
Form 2DEG raceway groove between AlGaN cap layers and GAN channel layer；
Described AlGaN cap layers are respectively formed with source electrode, drain electrode；
β type PVDF thin film is provided with the gate location of described AlGaN cap layers.
Preferably, the first surface of described β type PVDF thin film is positively charged, and the second surface band relative with first surface is born
Electric charge, wherein this first surface are close to described Al0.25Ga0.75The upper surface of N cap layers, make the grid of described pressure sensor with
Electric current I between drain electrodedsIncrease with the pressure that described β type PVDF thin film is subject to and increase；
Or, the first surface of described β type PVDF thin film is positively charged, and the second surface relative with first surface is negatively charged,
Wherein this second surface is close to described Al0.25Ga0.75The upper surface of N cap layers, makes grid and the drain electrode of described pressure sensor
Between electric current IdsIncrease with the pressure that described β type PVDF thin film is subject to and reduce.
In sum, the feature fully with reference to PVDF and HEMT for the present invention, the novel heterojunction pressure sensor made, can
To effectively improve induction sensitivity.
Brief description
Fig. 1, Fig. 2 are the former of two kinds of enforcement structures of the hetero-junctions pressure sensor made with reference to PVDF thin film in the present invention
Reason schematic diagram；
Fig. 3 is the schematic diagram that in the present invention, PVDF sample is carried out with high voltage polarization.
Specific embodiment
As shown in Figure 1 and Figure 2, the present invention provides a kind of novel heterojunction pressure sensor, is provided with the substrate layer of SiC；Substrate
The epitaxial layer being formed on layer comprises the AlGaN cap layers on GaN channel layer and this GAN channel layer, described AlGaN cap layers and GAN ditch
Form 2DEG raceway groove between channel layer；Described AlGaN cap layers form source electrode, drain electrode respectively；Grid in described AlGaN cap layers
β type PVDF thin film is formed on position.
β type PVDF material has good polarization characteristic.Polarization material comprises much little dipole element, and positive charge is in material
One side of material, negative electrical charge is in addition relative with positive charge place surface direction in material.Under ambient pressure effect, piezoelectricity
The size of the size of sample and doublet unit all can decrease.Therefore in material unit cell, all electric dipole moments can be relatively
Reduce.The change of material Dipole moment changes the charge density at material two ends, and the present invention make use of these characteristics.
β type PVDF thin film of the present invention has two relative surfaces, and first surface is positively charged, second surface band
Negative electrical charge.In first embodiment shown in Fig. 1, the first surface of PVDF thin film is bottom surface, and second surface is top surface；To
When PVDF thin film is placed on AlGaN cap layers, the first surface of PVDF thin film（Positively charged）It is close to the upper table of AlGaN cap layers
Face, second surface is away from AlGaN cap layers.In this first embodiment, once PVDF thin film is subject to ambient pressure, on this PVDF surface
Pure negative electrical charge will reduce, and then the positive charge of AlGaN cap layers upper surface is reduced, two-dimensional electron gas accordingly reduce.Cause
This, the electric current I between grid and drain electrode in this exampledsThe pressure being subject to PVDF thin film is increased and increases.
In a second embodiment shown in figure 2, polarization mode is exchanged, and the first surface of PVDF thin film is top surface, the second table
Face is bottom surface；When this PVDF thin film is placed on AlGaN cap layers, the second surface of PVDF thin film（Negatively charged）It is close to
The upper surface of AlGaN cap layers, first surface is away from AlGaN cap layers.Thus, in this second embodiment, AlGaN cap layers upper surface
Positive charge can raise, and drain current can relative increase.That is, the electric current I between grid and drain electrode in this exampledsWill be with PVDF thin film
The pressure being subject to increases and reduces.
The preparation method of pressure sensor of the present invention, comprises procedure below：
S1, on sic substrates, by molecular beam epitaxy technique grown epitaxial layer, comprises：
Grow the unadulterated GaN channel layer of 2 μm of thickness on sic substrates；And,
Undoped p Al of thickness 250nm is grown on GaN channel layer0.25Ga0.75N cap layers.
S2, in Al0.25Ga0.75Setting source electrode, drain electrode in N cap layers；
Wherein, ICP is utilized in argon Ar by mesa-isolated（Inductively coupled plasma）Technology, in source electrode and setting of draining
Meter position performs etching, power 300W, frequency 2MHz, -90V automatic bias, pressure 5mTorr（Millitorr）；
Using E_beam deposited（Electron beam deposition）Technology, at 850 DEG C, the nitrogen N of flowing2Middle through 50s, front
State the alloy that one of Ti/Al/Pt/Au metal or various metals are precipitated in etching position, obtain 5 × 10-6Ωcm2Contact
Resistance, forms the Ohmic contact emitter stage of standard, respectively constitutes source electrode and drain electrode.
S3, β type PVDF thin film is arranged Al0.25Ga0.75In the gate location of N cap layers；Wherein,
It is used positive polarity photoresist as mask, be 10 × 50 μm through the size that photoetching process determines gate location；
Form the coating of β type PVDF material in gate location, unpolarized thickness is made in gate location by micro- plotter and is 2 μm
PVDF thin film.
Wherein, the preparation process of β type PVDF thin film comprises：
1）PMMA by 10wt%（Polymethyl methacrylate）Mixing with PVDF powder stock adds N, N- dimethylacetamide
Form solution in amine.
2）Different from PVDF crystallization temperature using PMMA（114 DEG C of PMMA crystallization temperature, -38 DEG C of PVDF crystallization temperature）,
Prepare β type PVDF thin film.
Note：It is α type PVDF by the PVDF thin film that PVDF solution is directly synthesized.α type PVDF can neither polarize, and does not also have piezoelectricity
Property, pyroelectricity.But the mixing by the PMMA and PVDF of 10wt%, can obtain the crystallization of β type PVDF.
As shown in figure 3, for the share improving β type PVDF further, taking the method that sample is added high pressure, comprising：
3）The sample 31 of β type PVDF thin film is placed on copper substrate 32, and is immersed in perfluorotributylamine（F-43）In solution 33
（Solution will be maintained at 70 DEG C）, solution 33 is for stoping high-voltage arc effect.
4）With the copper cash of a diameter 0.2mm, it is suspended at 1cm above the sample of β type PVDF thin film.
5）So that copper substrate 32 is grounded, copper cash is connected with the dc source of 10kV, apply high pressure to sample.
In sum, the feature fully with reference to PVDF and HEMT for the present invention, the novel heterojunction pressure sensor made, can
To effectively improve induction sensitivity.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
Multiple modifications and substitutions all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of preparation method of β type PVDF thin film it is characterised in that：
The sample of β type PVDF thin film is placed on copper substrate, and is immersed in perfluorotributylamine solution；
One copper cash is suspended in the top of the sample of described β type PVDF thin film, and described copper cash is connected with dc source, and by copper base
Plate earthing, applies high pressure to the sample of described β type PVDF thin film, obtains β type PVDF thin film.
2. β type PVDF thin film as claimed in claim 1 preparation method it is characterised in that
The temperature of described perfluorotributylamine solution keeps 70 DEG C；Copper wire diameter is 0.2mm；Copper cash is suspended in described β type PVDF thin film
The top 1cm of sample at；The voltage of dc source is 10kV.
3. β type PVDF thin film as claimed in claim 1 or 2 preparation method it is characterised in that
The mixing of the PMMA and PVDF powder stock of 10wt% adds the solution being formed in DMA, by crystallization
Obtain the sample of described β type PVDF thin film.
4. a kind of preparation method of pressure sensor it is characterised in that：
Grow unadulterated GaN channel layer on sic substrates, and grow unadulterated on described GaN channel layer
Al0.25Ga0.75N cap layers；
Carry out mesa-isolated, and in described Al0.25Ga0.75In N cap layers, etching forms source electrode and the design attitude of drain electrode；Corresponding
Design attitude deposited metal layer, formed source electrode and drain contact electrode；
With positive polarity photoresist as mask, determine described Al through photoetching process0.25Ga0.75Gate location in N cap layers；Described
β type PVDF thin film is arranged on gate location.
5. pressure sensor as claimed in claim 4 preparation method it is characterised in that：
By the described β type PVDF thin film preparing by any one method in claim 1-3, described grid position is set
Put.
6. pressure sensor as claimed in claim 5 preparation method it is characterised in that：
The first surface of described β type PVDF thin film is positively charged, and the second surface relative with first surface is negatively charged, wherein should
First surface is close to described Al0.25Ga0.75The upper surface of N cap layers；Or, the first surface positively charged of described β type PVDF thin film
Lotus, the second surface relative with first surface is negatively charged, and wherein this second surface is close to described Al0.25Ga0.75N cap layers
Upper surface.
7. as described in any one in claim 4-6 pressure sensor preparation method it is characterised in that：
Unadulterated GaN channel layer and unadulterated Al0.25Ga0.75N cap layers, are grown by molecular beam epitaxy technique；
Utilize inductively coupled plasma technology in argon gas, the design attitude of source electrode and drain electrode is performed etching, inductive
The technological parameter of plasma technique comprises power 300W, frequency 2MHz, -90V automatic bias, pressure 5mTorr；
Using electron beam deposition technique, at 850 DEG C, the nitrogen N of flowing2Middle through 50s, carry out in depositing Ti/Al/Pt/Au
Plant the alloy of metal or various metals, form source electrode and the contact electrode of drain electrode；
Described Al0.25Ga0.75A size of 10 × 50 μm of gate location in N cap layers；
Size adjusting is carried out to the β type PVDF thin film at described gate location by micro- plotter.
8. as described in any one in claim 4-7 pressure sensor preparation method it is characterised in that：
The thickness of described GaN channel layer is 2 μm；
Described Al0.25Ga0.75The thickness of N cap layers is 250nm；
β type PVDF thin film at gate location, the thickness when not stressing is 2 μm.
9. a kind of pressure sensor it is characterised in that
Described pressure sensor is provided with SiC substrate layer；
On described substrate layer, the epitaxial layer of growth, comprises the AlGaN cap layers on GaN channel layer and this GAN channel layer, described
Form 2DEG raceway groove between AlGaN cap layers and GAN channel layer；
Described AlGaN cap layers are respectively formed with source electrode, drain electrode；
β type PVDF thin film is provided with the gate location of described AlGaN cap layers.
10. pressure sensor as claimed in claim 9 it is characterised in that
The first surface of described β type PVDF thin film is positively charged, and the second surface relative with first surface is negatively charged, wherein should
First surface is close to described Al0.25Ga0.75The upper surface of N cap layers, makes the electricity between the grid of described pressure sensor and drain electrode
Stream IdsIncrease with the pressure that described β type PVDF thin film is subject to and increase；
Or, the first surface of described β type PVDF thin film is positively charged, and the second surface relative with first surface is negatively charged,
Wherein this second surface is close to described Al0.25Ga0.75The upper surface of N cap layers, makes grid and the drain electrode of described pressure sensor
Between electric current IdsIncrease with the pressure that described β type PVDF thin film is subject to and reduce.
Priority Applications (1)
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|---|---|---|---|
| CN201610929260.6A CN106384749A (en) | 2016-10-31 | 2016-10-31 | Pressure sensor and making method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109211444A (en) * | 2018-09-25 | 2019-01-15 | 中国电子科技集团公司第十三研究所 | pressure sensor and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110068372A1 (en) * | 2007-09-18 | 2011-03-24 | University Of Florida Research Foundation, Inc. | Sensors using high electron mobility transistors |
| US20110137184A1 (en) * | 2008-08-19 | 2011-06-09 | Fan Ren | Pressure sensing |
| CN105470313A (en) * | 2014-08-12 | 2016-04-06 | 北京纳米能源与***研究所 | Back-gate field effect transistor based on contact electrification |
-
2016
- 2016-10-31 CN CN201610929260.6A patent/CN106384749A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110068372A1 (en) * | 2007-09-18 | 2011-03-24 | University Of Florida Research Foundation, Inc. | Sensors using high electron mobility transistors |
| US20110137184A1 (en) * | 2008-08-19 | 2011-06-09 | Fan Ren | Pressure sensing |
| CN105470313A (en) * | 2014-08-12 | 2016-04-06 | 北京纳米能源与***研究所 | Back-gate field effect transistor based on contact electrification |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109211444A (en) * | 2018-09-25 | 2019-01-15 | 中国电子科技集团公司第十三研究所 | pressure sensor and preparation method thereof |
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