CN106378698A - Grinding pressure compensation method for chemical mechanical grinding machine - Google Patents
Grinding pressure compensation method for chemical mechanical grinding machine Download PDFInfo
- Publication number
- CN106378698A CN106378698A CN201610957345.5A CN201610957345A CN106378698A CN 106378698 A CN106378698 A CN 106378698A CN 201610957345 A CN201610957345 A CN 201610957345A CN 106378698 A CN106378698 A CN 106378698A
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- grinding
- work
- compensation method
- pressure compensation
- stroke
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a grinding pressure compensation method for a chemical mechanical grinding machine. The method comprises the following steps that in a grinding process, thickness changes of a grinding pad are detected according to the stroke of a grinding disc; and grinding pressure is adjusted according to the different thicknesses of the grinding pad. According to the grinding pressure compensation method for the chemical mechanical grinding machine, the stroke of the grinding disc is measured through a sensor arranged on the grinding disc, the thickness changes of the grinding pad are calculated through the difference value between the practical stroke of the grinding disc in the grinding process and an original stroke value obtained during replacement of a new grinding pad, and the grinding pressure is adjusted according to the thickness changes of the grinding pad. The pressure is adjusted according to the thickness changes of the grinding pad, and it is ensured that the grinding speed is stable.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufactures the CMP process in field, and particularly to a kind of chemistry
Machinery grinding machine grinding pressure compensation method.
Background technology
In the manufacture process of integrated circuit, generally it is sequentially depositing semiconductor layer, conductive layer, oxide layer etc. on silicon
Multiple Rotating fields.It may be desirable to etch process is to form required pattern, thus forming circuit elements after deposited each layer
Part.Etch process can lead to the layer surface depositing out-of-flatness or uneven problem, thus in the follow-up processing step phase
Between produce defect.It is thus desirable to planarizing to the surface of device.
Cmp is a kind of process meanses being commonly used in and making device surface planarize.Fixing abrasive grains chemistry
Mechanical grinding device needs to use and has abrasiveness and corrosive abrasive grains, and uses cooperatively grinding pad, by comprehensive utilization
Chemical action and mechanism, are ground to semiconductor wafer.At present, conventional fixing abrasive grains chemical-mechanical grinding device
As shown in Figure 1.Shown fixing abrasive grains chemical-mechanical grinding device 100 includes turntable 101, grinding pad 102 and abrasive disk
103.Wherein, the surface of grinding pad 102 is fixed with abrasive grains and is driven by motor and make forward intermittent movement.It is being ground
When, chip to be ground is ridden over the surface of grinding pad 102 by abrasive disk 103, and abrasive disk 103 drives chip and with grinding pad
102 turntable 101 produces relative motion so that different rotating speeds rotates, and is fixed with the grinding pad 102 of abrasive grains by surface
Abrasive action and chip between is ground to chip, to reach the purpose removing and planarizing wafer surface.
In chemical mechanical planarization process, with the increase of grinding pad use time, grinding mat thickness can be thinning, companion simultaneously
With the reduction of lapping liquid gash depth, grinding rate can be led to decline, thus the uniformity of chip can be had undesirable effect, hold
It is also easy to produce defect and reduce production yield.
Content of the invention
The present invention proposes a kind of work-table of chemicomechanical grinding mill grinding pressure compensation method, for the change grinding mat thickness,
Carry out pressure regulation it is ensured that grinding rate is stable.
In order to achieve the above object, the present invention proposes a kind of work-table of chemicomechanical grinding mill grinding pressure compensation method, including
The following step：
In process of lapping, according to the stroke detection grinding pad thickness change of abrasive disk；
For grinding pad different-thickness, grinding pressure is adjusted.
Further, the method measures the stroke of abrasive disk by the sensor being arranged on abrasive disk.
Further, described grinding pad thickness change adopts below equation to calculate：Δ Hp=Hd2-Hd1, wherein Hd1 represent
The abrasive disk stroke obtaining for measurement when more renewing grinding pad, Hd2 is expressed as in follow-up process of lapping measuring the abrasive disk obtaining
Stroke.
Further, when Δ Hp numerical value is 1mm, grinding pressure is adjusted to 4Psi.
Further, when Δ Hp numerical value is 2mm, grinding pressure is adjusted to 4.2Psi.
Further, when Δ Hp numerical value is 3mm, grinding pressure is adjusted to 4.5Psi.
Further, when Δ Hp numerical value is 4mm, grinding pressure is adjusted to 4.8Psi.
Further, the grinding rate that the method adopts is 1000A/min.
Work-table of chemicomechanical grinding mill grinding pressure compensation method proposed by the present invention, by the sensing being arranged on abrasive disk
Device measures the stroke of abrasive disk, and by abrasive disk in traveled distance in process of lapping and original stroke when renewing grinding pad
The mathematic interpolation grinding pad thickness change of numerical value, and according to grinding pad thickness change, grinding pressure is adjusted.Pin of the present invention
To the change grinding mat thickness, carry out pressure regulation it is ensured that grinding rate is stable.
Brief description
Fig. 1 show the structural representation of chemical-mechanical grinding device in prior art.
Fig. 2 show the work-table of chemicomechanical grinding mill grinding pressure compensation method flow chart of present pre-ferred embodiments.
Specific embodiment
Provide the specific embodiment of the present invention below in conjunction with accompanying drawing, but the invention is not restricted to following embodiment.Root
According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is all using very simple
The form changed and all using non-accurately ratio, be only used for conveniently, lucidly aid in illustrating the purpose of the embodiment of the present invention.
Refer to Fig. 2, Fig. 2 show the work-table of chemicomechanical grinding mill grinding pressure compensation method of present pre-ferred embodiments
Flow chart.The present invention proposes a kind of work-table of chemicomechanical grinding mill grinding pressure compensation method, comprises the following steps：
Step S100：In process of lapping, according to the stroke detection grinding pad thickness change of abrasive disk；
Step S200：For grinding pad different-thickness, grinding pressure is adjusted.
According to present pre-ferred embodiments, the method measures the row of abrasive disk by the sensor being arranged on abrasive disk
Journey.
Described grinding pad thickness change adopts below equation to calculate：Δ Hp=Hd2-Hd1, wherein Hd1 are expressed as more renewing
The abrasive disk stroke that during grinding pad, measurement obtains, Hd2 is expressed as measuring the abrasive disk stroke obtaining in follow-up process of lapping.
When Δ Hp numerical value is 1mm, grinding pressure is adjusted to 4Psi.When Δ Hp numerical value is 2mm, grinding pressure is adjusted
Save as 4.2Psi.When Δ Hp numerical value is 3mm, grinding pressure is adjusted to 4.5Psi.When Δ Hp numerical value is 4mm, will grind
Pressure is adjusted to 4.8Psi.
Further, the grinding rate that the method adopts is 1000A/min.
In sum, work-table of chemicomechanical grinding mill grinding pressure compensation method proposed by the present invention, by being arranged at grinding
Sensor on disk measures the stroke of abrasive disk, and by abrasive disk when in process of lapping, traveled distance is with renewing grinding pad
Original travel values mathematic interpolation grinding pad thickness change, and according to grinding pad thickness change, grinding pressure is adjusted
Section.The present invention is directed to the change grinding mat thickness, carries out pressure regulation it is ensured that grinding rate is stable.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.The affiliated skill of the present invention
Has usually intellectual, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations in art field.Cause
This, protection scope of the present invention ought be defined depending on those as defined in claim.
Claims (8)
1. a kind of work-table of chemicomechanical grinding mill grinding pressure compensation method is it is characterised in that comprise the following steps：
In process of lapping, according to the stroke detection grinding pad thickness change of abrasive disk；
For grinding pad different-thickness, grinding pressure is adjusted.
2. work-table of chemicomechanical grinding mill grinding pressure compensation method according to claim 1 is it is characterised in that the method is led to
Cross the stroke that the sensor being arranged on abrasive disk measures abrasive disk.
3. work-table of chemicomechanical grinding mill grinding pressure compensation method according to claim 1 is it is characterised in that described grinding
Mat thickness change is calculated using below equation：Measurement when Δ Hp=Hd2-Hd1, wherein Hd1 are expressed as more renewing grinding pad obtains
Abrasive disk stroke, Hd2 is expressed as measuring the abrasive disk stroke obtaining in follow-up process of lapping.
4. work-table of chemicomechanical grinding mill grinding pressure compensation method according to claim 3 is it is characterised in that work as Δ Hp number
When being worth for 1mm, grinding pressure is adjusted to 4Psi.
5. work-table of chemicomechanical grinding mill grinding pressure compensation method according to claim 3 is it is characterised in that work as Δ Hp number
When being worth for 2mm, grinding pressure is adjusted to 4.2Psi.
6. work-table of chemicomechanical grinding mill grinding pressure compensation method according to claim 3 is it is characterised in that work as Δ Hp number
When being worth for 3mm, grinding pressure is adjusted to 4.5Psi.
7. work-table of chemicomechanical grinding mill grinding pressure compensation method according to claim 3 is it is characterised in that work as Δ Hp number
When being worth for 4mm, grinding pressure is adjusted to 4.8Psi.
8. work-table of chemicomechanical grinding mill grinding pressure compensation method according to claim 1 is it is characterised in that the method is adopted
Grinding rate is 1000A/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610957345.5A CN106378698B (en) | 2016-10-27 | 2016-10-27 | A kind of work-table of chemicomechanical grinding mill grinding pressure compensation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610957345.5A CN106378698B (en) | 2016-10-27 | 2016-10-27 | A kind of work-table of chemicomechanical grinding mill grinding pressure compensation method |
Publications (2)
| Publication Number | Publication Date |
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| CN106378698A true CN106378698A (en) | 2017-02-08 |
| CN106378698B CN106378698B (en) | 2018-12-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610957345.5A Active CN106378698B (en) | 2016-10-27 | 2016-10-27 | A kind of work-table of chemicomechanical grinding mill grinding pressure compensation method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110064999A (en) * | 2019-05-06 | 2019-07-30 | 西安奕斯伟硅片技术有限公司 | A kind of adjusting method of milling apparatus and grinding table |
| CN111975469A (en) * | 2020-08-28 | 2020-11-24 | 上海华力微电子有限公司 | Chemical mechanical polishing method and polishing system |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1978140A (en) * | 2005-12-08 | 2007-06-13 | 上海华虹Nec电子有限公司 | Method for prolonging service-life of grinding pad in chemical-mechanical polishing |
| CN102554788A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Dressing method of polishing pad |
| EP2428315A3 (en) * | 2010-09-09 | 2014-06-11 | Ebara Corporation | Polishing apparatus |
| CN104858784A (en) * | 2014-02-26 | 2015-08-26 | 盛美半导体设备（上海）有限公司 | Polishing pad trimming method |
| CN104889879A (en) * | 2014-03-05 | 2015-09-09 | 株式会社荏原制作所 | Polishing apparatus and polishing method |
| CN104924198A (en) * | 2014-03-20 | 2015-09-23 | 株式会社荏原制作所 | Polishing device and polishing method |
| CN205237796U (en) * | 2014-11-04 | 2016-05-18 | K.C.科技股份有限公司 | Chemical mechanical grinding device |
-
2016
- 2016-10-27 CN CN201610957345.5A patent/CN106378698B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1978140A (en) * | 2005-12-08 | 2007-06-13 | 上海华虹Nec电子有限公司 | Method for prolonging service-life of grinding pad in chemical-mechanical polishing |
| EP2428315A3 (en) * | 2010-09-09 | 2014-06-11 | Ebara Corporation | Polishing apparatus |
| CN104858786A (en) * | 2010-09-09 | 2015-08-26 | 株式会社荏原制作所 | Polishing Apparatus |
| CN102554788A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Dressing method of polishing pad |
| CN104858784A (en) * | 2014-02-26 | 2015-08-26 | 盛美半导体设备（上海）有限公司 | Polishing pad trimming method |
| CN104889879A (en) * | 2014-03-05 | 2015-09-09 | 株式会社荏原制作所 | Polishing apparatus and polishing method |
| CN104924198A (en) * | 2014-03-20 | 2015-09-23 | 株式会社荏原制作所 | Polishing device and polishing method |
| CN205237796U (en) * | 2014-11-04 | 2016-05-18 | K.C.科技股份有限公司 | Chemical mechanical grinding device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110064999A (en) * | 2019-05-06 | 2019-07-30 | 西安奕斯伟硅片技术有限公司 | A kind of adjusting method of milling apparatus and grinding table |
| CN111975469A (en) * | 2020-08-28 | 2020-11-24 | 上海华力微电子有限公司 | Chemical mechanical polishing method and polishing system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106378698B (en) | 2018-12-11 |
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