JP5622445B2 - Grinding method and grinding apparatus - Google Patents

Grinding method and grinding apparatus Download PDF

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JP5622445B2
JP5622445B2 JP2010132637A JP2010132637A JP5622445B2 JP 5622445 B2 JP5622445 B2 JP 5622445B2 JP 2010132637 A JP2010132637 A JP 2010132637A JP 2010132637 A JP2010132637 A JP 2010132637A JP 5622445 B2 JP5622445 B2 JP 5622445B2
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grinding
semiconductor wafer
grinding wheel
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work surface
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JP2011258789A (en
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新井　健太郎
健太郎 新井
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Lapis Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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Description

本発明は、半導体ウエハなどの被加工物の表面を研削加工する技術に関する。   The present invention relates to a technique for grinding a surface of a workpiece such as a semiconductor wafer.

半導体装置の製造工程では、半導体ウエハの裏面研削（バックグライド）や、半導体ウエハのおもて面側に形成された絶縁膜やメタル配線の研削（研磨を含む。）を行うことがある。一般にこのような研削加工は、研削砥石を被加工物の表面に接触させた状態で研削砥石と被加工物とを互いに摺動させることにより行われる。   In the manufacturing process of a semiconductor device, backside grinding (back glide) of a semiconductor wafer and grinding (including polishing) of an insulating film or metal wiring formed on the front surface side of the semiconductor wafer may be performed. In general, such grinding is performed by sliding the grinding wheel and the workpiece against each other with the grinding wheel in contact with the surface of the workpiece.

この種の研削加工に関する先行技術文献としては、たとえば、特開２００６−５９８３７号公報（特許文献１）が挙げられる。特許文献１には、半導体装置（半導体ウエハ）に対する研削砥石の下降速度を変化させつつ研削を行う研削方法が開示されている。   As a prior art document regarding this type of grinding, for example, Japanese Patent Laid-Open No. 2006-59837 (Patent Document 1) can be cited. Patent Document 1 discloses a grinding method for performing grinding while changing a descending speed of a grinding wheel with respect to a semiconductor device (semiconductor wafer).

特開２００６−５９８３７号公報JP 2006-59837 A

特許文献１に開示される研削方法は、半導体装置の厚さが所望の仕上げ厚さに達するまで、半導体装置に対して連続的に研削加工を施し、研削砥石を半導体装置に長時間接触させ続けるものである。しかしながら、この研削方法では、研削砥石に研削屑が固着して研削砥石の研削能力が低下しやすいという問題がある。研削砥石の研削能力が低下すれば、被加工物表面にキズなどの異常が発生し、加工精度が低下する。この問題に対しては、ダイアモンド砥石などを有する目立て用冶具を用いて、研削砥石の表面に固着した研削屑を除去することにより、研削砥石の研削能力を再生させることができる。しかしながら、この作業は手間と時間を必要とし、製造コストを上昇させ、生産能力を低下させる一因となっていた。   The grinding method disclosed in Patent Document 1 continuously grinds a semiconductor device until the thickness of the semiconductor device reaches a desired finished thickness, and keeps the grinding wheel in contact with the semiconductor device for a long time. Is. However, in this grinding method, there is a problem that grinding waste adheres to the grinding wheel and the grinding ability of the grinding wheel is likely to deteriorate. If the grinding ability of the grinding wheel decreases, abnormalities such as scratches occur on the surface of the workpiece, and the processing accuracy decreases. To solve this problem, the grinding ability of the grinding wheel can be regenerated by removing grinding debris adhered to the surface of the grinding wheel using a sharpening jig having a diamond grinding wheel or the like. However, this work requires labor and time, which increases the manufacturing cost and decreases the production capacity.

上記に鑑みて本発明の目的は、研削砥石の研削能力を効率良く再生あるいは維持することができる研削方法及び研削装置を提供することである。   In view of the above, an object of the present invention is to provide a grinding method and a grinding apparatus that can efficiently regenerate or maintain the grinding ability of a grinding wheel.

本発明による研削方法は、第１の主面に形成された金属メッキ膜と、前記第１の主面及び前記金属メッキ膜を封止する樹脂層とを備え、前記金属メッキ膜と前記樹脂層とが備えられた側を被削面とする半導体ウエハを、テーブルに保持するウエハ保持工程と、研削砥石を前記半導体ウエハの前記被削面に接触させ、前記被削面に対して前記研削砥石を相対的に摺動させながら前記研削砥石と前記テーブルとの間隔を狭めることにより、前記半導体ウエハの前記金属メッキ膜と前記樹脂層とに研削加工を施す研削工程と、前記研削工程の途中で、前記研削砥石を前記半導体ウエハから離間させて前記半導体ウエハの当該被削面と前記研削砥石との間に間隙を形成し、前記間隙に研削液を流通させる研削面洗浄工程と、を含むことを特徴とする。 The grinding method according to the present invention includes a metal plating film formed on a first main surface, and a resin layer that seals the first main surface and the metal plating film, the metal plating film and the resin layer. the semiconductor wafer to be collected by the workpiece surface side provided, and a wafer holding step of holding the table, contacting the grindstone to the workpiece surface of the semiconductor wafer, relative to the grinding wheel relative to the workpiece surface by narrowing the gap between the grinding wheel and the table while sliding on, said the grinding step and the metal plating film of the semiconductor wafer subjected to grinding to said resin layer, in the course of the grinding process, the grinding A grinding surface cleaning step of separating a grinding wheel from the semiconductor wafer to form a gap between the work surface of the semiconductor wafer and the grinding wheel, and flowing a grinding liquid through the gap. .

本発明による研削装置は、研削砥石と、第１の主面に形成された金属メッキ膜と、前記第１の主面及び前記金属メッキ膜を封止する樹脂層とを備え、前記金属メッキ膜と前記樹脂層とが備えられた側を被削面とする半導体ウエハ半導体ウエハが載置されるテーブルと、前記半導体ウエハに対して近接または離間する方向に前記研削砥石を相対移動させる第１の駆動部と、前記半導体ウエハの被削面に前記研削砥石が接触した状態で前記被削面に対して前記研削砥石を相対的に摺動させる第２の駆動部と、前記第１の駆動部及び前記第２の駆動部の各々を制御する駆動制御部と、前記半導体ウエハの当該被削面に研削液を供給する研削液供給部と、を備え、前記駆動制御部は、前記第１の駆動部を制御して前記研削砥石を前記半導体ウエハの前記被削面に接触させ、前記第２の駆動部を制御して前記被削面に対して前記研削砥石を相対的に摺動させながら前記研削砥石と前記テーブルとの間隔を狭めることにより、前記半導体ウエハの前記金属メッキ膜と前記樹脂層とに研削加工を施す研削工程と、前記研削工程の途中で、前記第１の駆動部を制御して前記研削砥石を前記半導体ウエハから離間させて前記被削面と前記研削砥石との間に間隙を形成し、前記間隙に前記研削液を流通させる研削面洗浄工程と、を順次実行することを特徴とする。 A grinding apparatus according to the present invention includes a grinding wheel, a metal plating film formed on a first main surface, and a resin layer that seals the first main surface and the metal plating film. And a semiconductor wafer whose surface is provided with a semiconductor wafer, a table on which a semiconductor wafer is placed, and a first drive for moving the grinding wheel relative to each other in a direction approaching or separating from the semiconductor wafer A second drive unit that slides the grinding wheel relative to the work surface while the grinding wheel is in contact with the work surface of the semiconductor wafer, the first drive unit, and the first drive unit. A drive control unit that controls each of the two drive units, and a grinding fluid supply unit that supplies a grinding fluid to the cut surface of the semiconductor wafer, and the drive control unit controls the first drive unit. before the grinding wheel of the semiconductor wafer and Is brought into contact with the work surface, by narrowing the interval between the second of said grinding wheel and said table while relatively sliding said grinding wheel by controlling the drive unit to the workpiece surface, the semiconductor wafer A grinding process for grinding the metal plating film and the resin layer, and the grinding surface is separated from the semiconductor wafer by controlling the first drive unit during the grinding process. And a grinding surface cleaning step of sequentially forming a gap between the grinding wheel and the grinding wheel, and passing the grinding fluid through the gap.

本発明によれば、研削砥石の研削能力を効率良く再生あるいは維持することができる。   According to the present invention, the grinding ability of a grinding wheel can be efficiently regenerated or maintained.

本発明の一実施形態の研削装置の構成を概略的に示す図である。It is a figure showing roughly the composition of the grinding device of one embodiment of the present invention. 研削ヘッドと被加工物とを概略的に示す上面視図である。FIG. 2 is a top view schematically showing a grinding head and a workpiece. 研削パッドが被加工物の表面（被削面）を研削加工する状態を概略的に示す図である。It is a figure showing roughly the state where a grinding pad grinds the surface (working surface) of a work piece. 本実施形態に係る加工シーケンスの一例を示すグラフである。It is a graph which shows an example of the processing sequence concerning this embodiment. 比較例の加工シーケンスを示すグラフである。It is a graph which shows the processing sequence of a comparative example.

以下、本発明に係る実施形態について図面を参照しつつ説明する。   Hereinafter, embodiments according to the present invention will be described with reference to the drawings.

図１は、本発明の一実施形態の研削装置１の構成を概略的に示す図である。図１に示されるように、研削装置１は、被加工物（ワーク）である半導体ウエハ２が載置される真空吸着テーブル１１と、研削パッド（研削砥石）２２，…，２２を有する研削ヘッド２０と、真空吸着テーブル１１を中心軸線Ｘ１の回りに回転させる回転駆動部（図示せず）を有するテーブル駆動機構１０と、研削ヘッド２０を中心軸線Ｘ２の回りに回転させる回転駆動部（図示せず）を有するヘッド駆動機構２５と、半導体ウエハ２の表面（被削面）２ａに研削液を供給する研削液供給部２７とを備える。   FIG. 1 is a diagram schematically showing a configuration of a grinding apparatus 1 according to an embodiment of the present invention. As shown in FIG. 1, a grinding apparatus 1 includes a vacuum suction table 11 on which a semiconductor wafer 2 as a workpiece (workpiece) is placed, and a grinding head having grinding pads (grinding wheels) 22,. 20, a table driving mechanism 10 having a rotation driving unit (not shown) for rotating the vacuum suction table 11 around the central axis X1, and a rotation driving unit (not shown) for rotating the grinding head 20 around the central axis X2. And a grinding fluid supply unit 27 that supplies a grinding fluid to the surface (work surface) 2 a of the semiconductor wafer 2.

ヘッド駆動機構２５は、中心軸線Ｘ２に沿って半導体ウエハ２に対して離間または近接する方向に研削ヘッド２０を移動（上昇または下降）させる駆動部（図示せず）をも有し、テーブル駆動機構１０は、中心軸線Ｘ１に垂直な水平方向に真空吸着テーブル１１を移動させる送り駆動部（図示せず）をも有している。   The head drive mechanism 25 also has a drive unit (not shown) for moving (raising or lowering) the grinding head 20 in a direction away from or close to the semiconductor wafer 2 along the central axis X2. 10 also has a feed drive unit (not shown) for moving the vacuum suction table 11 in the horizontal direction perpendicular to the central axis X1.

また、研削装置１は、研削制御部３０と、この研削制御部３０に指示情報を与える操作パネル３５とを有する。研削制御部３０は、テーブル駆動機構１０及びヘッド駆動機構２５の各動作を制御する駆動制御部３１と、研削液供給部２７の動作を制御する配液制御部３２とを有している。ユーザが操作パネル３５を操作して研削加工制御に関する指示情報を入力すると、駆動制御部３１及び配液制御部３２は、入力された指示情報に応じた研削加工制御を実行する。   The grinding apparatus 1 also includes a grinding control unit 30 and an operation panel 35 that gives instruction information to the grinding control unit 30. The grinding control unit 30 includes a drive control unit 31 that controls each operation of the table drive mechanism 10 and the head drive mechanism 25, and a liquid distribution control unit 32 that controls the operation of the grinding fluid supply unit 27. When the user operates the operation panel 35 to input instruction information related to grinding process control, the drive control unit 31 and the liquid distribution control unit 32 execute grinding process control according to the input instruction information.

なお、研削制御部３０は、たとえば、ＣＰＵなどのマイクロプロセッサ，ＲＯＭ（Ｒｅａｄ Ｏｎｌｙ Ｍｅｍｏｒｙ），ＲＡＭ（Ｒａｎｄｏｍ Ａｃｃｅｓｓ Ｍｅｍｏｒｙ）及び入出力インタフェースを含む制御回路で構成することができる。また、駆動制御部３１及び配液制御部３２の機能の全部または一部を、マイクロプロセッサにより実行される制御用コンピュータプログラムで実現することも可能である。   The grinding control unit 30 can be configured by a control circuit including a microprocessor such as a CPU, a ROM (Read Only Memory), a RAM (Random Access Memory), and an input / output interface, for example. It is also possible to realize all or part of the functions of the drive control unit 31 and the liquid distribution control unit 32 with a control computer program executed by a microprocessor.

半導体ウエハ２は、たとえば、シリコンなどの単結晶半導体、多結晶半導体あるいは化合物半導体からなる構造を含むバルク基板やＳＯＩ（Ｓｉｌｉｃｏｎ−Ｏｎ−Ｉｎｓｕｌａｔｏｒ）基板といった半導体基板を有している。   The semiconductor wafer 2 has, for example, a semiconductor substrate such as a bulk substrate including a structure made of a single crystal semiconductor such as silicon, a polycrystalline semiconductor, or a compound semiconductor, or an SOI (Silicon-On-Insulator) substrate.

半導体ウエハ２の被削面２ａは、半導体ウエハ２のおもて面（集積回路が形成される側の面）をなす樹脂層、あるいは、半導体ウエハ２の裏面（集積回路が形成されない側の面）である。銅などの金属配線を含む樹脂層の研削加工を行うと、研削砥石に金属配線の研削屑が固着しやすい。ＷＣＳＰ（Ｗａｆｅｒ−ｌｅｖｅｌ Ｃｈｉｐ Ｓｃａｌｅ Ｐａｃｋａｇｉｎｇ）の製造工程の場合、ウエハプロセス完了後、半導体ウエハの電極パッド上に銅などの金属メッキ膜の配線パターンを形成し、その後、この半導体ウエハの表面を樹脂膜で封止する。次に、この樹脂膜の表面を研削して配線パターンの一部を露出させ、その露出した部分に外部接続用の電極端子（はんだボールなど）を形成することが行われる。配線パターンの研削屑は、研削パッド２２の表面に固着しやすく、研削パッド２２の研削能力を低下させやすい。後述するように、本実施形態に係る研削方法を使用すれば、研削パッド２２に金属配線の研削屑が強固に固着する前に、目立て用治具を用いずに、研削パッド２２に付着した研削屑を効率良く除去することができる。   The cut surface 2a of the semiconductor wafer 2 is a resin layer forming the front surface (the surface on which the integrated circuit is formed) of the semiconductor wafer 2, or the back surface (the surface on which the integrated circuit is not formed) of the semiconductor wafer 2. It is. When a resin layer containing metal wiring such as copper is ground, grinding scraps of the metal wiring are easily fixed to the grinding wheel. In the case of the manufacturing process of WCSP (Wafer-Level Chip Scale Packaging), after completion of the wafer process, a wiring pattern of a metal plating film such as copper is formed on the electrode pad of the semiconductor wafer, and then the surface of the semiconductor wafer is coated with a resin film. Seal with. Next, the surface of the resin film is ground to expose a part of the wiring pattern, and external connection electrode terminals (such as solder balls) are formed on the exposed part. The grinding dust of the wiring pattern tends to adhere to the surface of the grinding pad 22 and tends to reduce the grinding ability of the grinding pad 22. As will be described later, when the grinding method according to the present embodiment is used, the grinding adhered to the grinding pad 22 without using a sharpening jig before the grinding dust of the metal wiring is firmly fixed to the grinding pad 22. Debris can be efficiently removed.

研削ヘッド２０は、図１に示されるように、ヘッド駆動機構２５の回転軸２５ａに固定された回転盤２１と、この回転盤２１の表面に形成された多数の研削パッド２２，…，２２とを有する。図２は、この研削ヘッド２０と半導体ウエハ２とを概略的に示す上面視図である。図２に示されるように、研削ヘッド２０の表面には、環状に配列された多数の研削パッド２２，…，２２が形成されているが、これら研削パッド２２，…，２２の形状や配列に限定されるものではない。   As shown in FIG. 1, the grinding head 20 includes a rotary disc 21 fixed to the rotary shaft 25 a of the head drive mechanism 25, and a number of grinding pads 22,..., 22 formed on the surface of the rotary disc 21. Have FIG. 2 is a top view schematically showing the grinding head 20 and the semiconductor wafer 2. As shown in FIG. 2, a large number of grinding pads 22,..., 22 arranged in an annular shape are formed on the surface of the grinding head 20, and the shape and arrangement of these grinding pads 22,. It is not limited.

研削パッド２２は、切れ刃として機能する粒度の低い微少な砥粒（図示せず）を含有する研削砥石である。砥粒の材料としては、たとえば、ダイアモンドや立方晶窒化ホウ素（ＣＢＮ：Ｃｕｂｉｃ Ｂｏｒｏｎ Ｎｉｔｒｉｄｅ）やアルミナ（Ａｌ２Ｏ３）を主体とするものが挙げられる。研削パッド２２は、公知のレジノイド結合剤（Ｒｅｓｉｎｏｉｄ ｂｏｎｄ）といった結合剤を用いて多数の砥粒を互いに結合することにより成形される。 The grinding pad 22 is a grinding wheel containing fine abrasive grains (not shown) having a low particle size that function as cutting edges. Examples of the material for the abrasive include diamond, cubic boron nitride (CBN), and alumina (Al 2 O 3 ). The grinding pad 22 is formed by bonding a large number of abrasive grains to each other using a binder such as a known resinoid bond.

このような研削パッド２２を用いて銅やアルミニウムなどの軟らかく粘りのある被削材を長時間連続的に研削すると、研削パッド２２の表面部の砥粒の間に研削屑が固着し、砥粒が研削屑の中に埋もれてしまうという現象（目詰まり）が起こる。目詰まりが生じると、研削パッド２２の研削能力が低下して、研削速度の制御が困難になったり、被削面２ａの全体に亘って仕上げ厚さを均一にすることができなかったりするという問題がある。この種の目詰まりを解消するためにダイアモンド砥石などの目立て用冶具を用いて研削パッド２２の表面に付着した研削屑を除去することにより、研削パッド２２の研削能力を再生させることができるが、この作業には多大な手間と時間を要する。後述するように、本実施形態に係る研削方法を使用すれば、研削パッド２２に研削屑が強固に固着する前に、目立て用治具を用いることなく、研削パッド２２に付着した研削屑を効率良く除去することができる。   When a soft and viscous work material such as copper or aluminum is continuously ground for a long time using such a grinding pad 22, grinding scraps are fixed between the abrasive grains on the surface portion of the grinding pad 22, and the abrasive grains. Phenomenon (clogging) occurs that is buried in grinding scraps. When clogging occurs, the grinding ability of the grinding pad 22 decreases, and it becomes difficult to control the grinding speed, or the finished thickness cannot be made uniform over the entire work surface 2a. There is. The grinding ability of the grinding pad 22 can be regenerated by removing grinding debris adhering to the surface of the grinding pad 22 using a sharpening tool such as a diamond grindstone in order to eliminate this kind of clogging. This work requires a lot of labor and time. As will be described later, if the grinding method according to the present embodiment is used, the grinding dust adhered to the grinding pad 22 is efficiently used without using a sharpening jig before the grinding waste firmly adheres to the grinding pad 22. Can be removed well.

図３は、研削パッド２２，…，２２が半導体ウエハ２の表面（被削面）２ａを研削加工する状態を概略的に示す図である。図３及び図２に示されるように、被削面２ａに研削パッド２２が接触した状態で、テーブル駆動機構１０は、半導体ウエハ２を中心軸線Ｘ１の回りに時計回り方向Ｒ１へ回転させ、ヘッド駆動機構２５は、研削ヘッド２０を中心軸線Ｘ２の回りに反時計回り方向Ｒ２へ回転させる。なお、研削ヘッド２０を中心軸線Ｘ２の回りに時計回り方向へ回転させることも可能である。これにより、半導体ウエハ２の被削面２ａに対して研削パッド２２，…，２２が相対的に摺動し、被削面２ａの全体を均一に研削加工することができる。   FIG. 3 is a diagram schematically showing a state in which the grinding pads 22,... 22 grind the surface (work surface) 2 a of the semiconductor wafer 2. As shown in FIGS. 3 and 2, the table driving mechanism 10 rotates the semiconductor wafer 2 in the clockwise direction R1 around the central axis X1 in a state where the grinding pad 22 is in contact with the work surface 2a to drive the head. The mechanism 25 rotates the grinding head 20 in the counterclockwise direction R2 around the central axis X2. It is also possible to rotate the grinding head 20 clockwise around the center axis X2. Thereby, the grinding pads 22,..., 22 slide relative to the work surface 2a of the semiconductor wafer 2, and the entire work surface 2a can be uniformly ground.

上記研削加工の工程中、研削液供給部２７は、配液制御部３２からの指令に応じて、ノズル２７ａの先端から研削液を吐出して被削面２ａに研削液を供給する。ノズル２７ａから吐出された研削液は、研削ヘッド２０の回転方向に沿って被削面２ａ上に供給される。この研削液は、半導体ウエハ２と研削パッド２２との摺動により発生した熱の除去や潤滑のために与えられるものである。本実施形態では、研削液として、たとえば純水を使用することができる。   During the grinding process, the grinding fluid supply unit 27 discharges the grinding fluid from the tip of the nozzle 27a and supplies the grinding fluid to the work surface 2a in response to a command from the liquid distribution control unit 32. The grinding liquid discharged from the nozzle 27 a is supplied onto the work surface 2 a along the rotation direction of the grinding head 20. This grinding liquid is provided for removing heat and lubrication generated by sliding between the semiconductor wafer 2 and the grinding pad 22. In the present embodiment, for example, pure water can be used as the grinding fluid.

上記構成を有する研削装置１を用いた研削方法を図４を参照しつつ以下に説明する。図４は、本実施形態に係る加工シーケンスの一例を説明するためのグラフである。図４のグラフにおいて、横軸は、研削加工制御の実行時間すなわち加工時間ｔを示し、縦軸は、真空吸着テーブル１１の上面からの研削パッド２２の高さＨｐを示す。グラフの曲線の傾きは、ヘッド駆動機構２５が中心軸線Ｘ２に沿って研削ヘッド２０を送り込む速度であり、研削パッド２２が被削面２ａに接触しているときは、研削パッド２２が半導体ウエハ２を研削する速度（研削速度）を意味する。   A grinding method using the grinding apparatus 1 having the above configuration will be described below with reference to FIG. FIG. 4 is a graph for explaining an example of the machining sequence according to the present embodiment. In the graph of FIG. 4, the horizontal axis represents the execution time of the grinding process control, that is, the machining time t, and the vertical axis represents the height Hp of the grinding pad 22 from the upper surface of the vacuum suction table 11. The slope of the curve in the graph is the speed at which the head driving mechanism 25 feeds the grinding head 20 along the center axis X2, and when the grinding pad 22 is in contact with the work surface 2a, the grinding pad 22 moves the semiconductor wafer 2 over. It means the grinding speed (grinding speed).

操作パネル３５にユーザ操作による加工開始指示が入力されると、駆動制御部３１は、この加工開始指示に応じて、ヘッド駆動機構２５及びテーブル駆動機構１０に対する制御を開始する。これにより、まず、テーブル駆動機構１０は、真空吸着テーブル１１を水平方向に移動させて研削ヘッド２０の中心軸線Ｘ２に対して半導体ウエハ２の中心軸線Ｘ１を所定距離だけオフセットする。その後、テーブル駆動機構１０は、半導体ウエハ２を中心軸線Ｘ１の回りに一定の角速度Ｖθ１で回転させ、ヘッド駆動機構２５は、研削ヘッド２０を中心軸線Ｘ２の回りに一定の角速度Ｖθ２（Ｖθ２＞Ｖθ１）で回転させる。一方、配液制御部３２は、研削液供給部２７にそのノズル２７ａの先端から被削面２ａに向けて研削液を吐出させる。 When a machining start instruction by a user operation is input to the operation panel 35, the drive control unit 31 starts control of the head drive mechanism 25 and the table drive mechanism 10 in response to the machining start instruction. Thereby, first, the table drive mechanism 10 moves the vacuum suction table 11 in the horizontal direction to offset the center axis X1 of the semiconductor wafer 2 by a predetermined distance with respect to the center axis X2 of the grinding head 20. Thereafter, the table driving mechanism 10 rotates the semiconductor wafer 2 around the central axis X1 at a constant angular velocity V θ1 , and the head driving mechanism 25 causes the grinding head 20 to rotate around the central axis X2 at a constant angular velocity V θ2 (V Rotate with θ2 > Vθ1 ). On the other hand, the liquid distribution control section 32 causes the grinding liquid supply section 27 to discharge the grinding liquid from the tip of the nozzle 27a toward the work surface 2a.

そして、ヘッド駆動機構２５は、図４のグラフに示されるように研削ヘッド２０を一定の速度Ｖ０で下降させる（時刻ｔ０以後）。研削パッド２２，…，２２が半導体ウエハ２の被削面２ａに接触すると（時刻ｔ１）、半導体ウエハ２に対する予備研削加工が開始される。予備研削加工では、ヘッド駆動機構２５は、研削ヘッド２０を研削速度Ｖ１で送り込む。 The head driving mechanism 25, the grinding head 20 is lowered at a constant speed V0 as shown in the graph of FIG. 4 (time t 0 after). When the grinding pads 22,... 22 come into contact with the work surface 2 a of the semiconductor wafer 2 (time t 1 ), the preliminary grinding process for the semiconductor wafer 2 is started. In the preliminary grinding process, the head drive mechanism 25 feeds the grinding head 20 at the grinding speed V1.

その後の時刻ｔＡ１で、駆動制御部３１は、ヘッド駆動機構２５を制御して被削面２ａから研削ヘッド２０を離間させて予備研削加工を中断させる。駆動制御部３１は、時刻ｔＡ１〜ｔＡ２の間、ヘッド駆動機構２５を制御して研削ヘッド２０を上昇させることにより被削面２ａと研削パッド２２との間に間隙を形成する。ノズル２７ａから供給されている研削液は、その間隙を満たしつつ研削ヘッド２０の相対回転に伴い間隙を流通することとなる。間隙の大きさは、研削液が間隙を完全に流通することができる大きさであればよく、たとえば、５００μｍ程度にすればよい。 At time t A1 thereafter, the drive control unit 31 controls the head drive mechanism 25 to separate the grinding head 20 from the work surface 2a and interrupt the preliminary grinding process. The drive control unit 31 controls the head drive mechanism 25 to raise the grinding head 20 during the time t A1 to t A2 , thereby forming a gap between the work surface 2 a and the grinding pad 22. The grinding fluid supplied from the nozzle 27a circulates through the gap with the relative rotation of the grinding head 20 while filling the gap. The size of the gap may be a size that allows the grinding fluid to completely flow through the gap, and may be, for example, about 500 μm.

時刻ｔＡ２で、駆動制御部３１は、ヘッド駆動機構２５を制御して研削ヘッド２０の速度を上昇速度から下降速度に切り替える。この結果、研削ヘッド２０は、被削面２ａの方向に移動して間隙を流通する研削液に圧力を加えるので、間隙を流通する研削液の液圧が上昇することとなる。その後の時刻ｔＡ３で、研削パッド２２，…，２２が再び被削面２ａに接触すると、半導体ウエハ２に対する予備研削加工が再開される。その後、予備研削加工は研削速度Ｖ１で続行される。 At time t A2 , the drive control unit 31 controls the head drive mechanism 25 to switch the speed of the grinding head 20 from the ascending speed to the descending speed. As a result, the grinding head 20 moves in the direction of the work surface 2a and applies pressure to the grinding fluid flowing through the gap, so that the hydraulic pressure of the grinding fluid flowing through the gap increases. When the grinding pads 22,..., 22 come into contact with the work surface 2a again at time tA3 , the pre-grinding process for the semiconductor wafer 2 is resumed. Thereafter, the preliminary grinding process is continued at the grinding speed V1.

上記したように駆動制御部３１は、予備研削加工を中断し、研削ヘッド２０の動作を下降動作から上昇動作に切り替えて研削パッド２２と被削面２ａとの間に間隙を形成し、この間隙に液圧の高い研削液を流通させる（時刻ｔＡ１〜ｔＡ３）。これにより、研削パッド２２を洗浄して研削パッド２２に付着している研削屑をすることができ、研削パッド２２の高い研削能力を再生あるいは維持することができる。 As described above, the drive control unit 31 interrupts the preliminary grinding process, switches the operation of the grinding head 20 from the descending operation to the ascending operation, and forms a gap between the grinding pad 22 and the work surface 2a. A grinding fluid having a high hydraulic pressure is circulated (time t A1 to t A3 ). As a result, the grinding pad 22 can be cleaned to remove grinding dust adhering to the grinding pad 22, and the high grinding ability of the grinding pad 22 can be regenerated or maintained.

次に、図４に示されるように、現在時刻が時刻ｔ２に達すると、駆動制御部３１は、ヘッド駆動機構２５を制御して研削ヘッド２０の送り込み速度（下降速度）Ｖ１を、より低い速度Ｖ２に切り替えて、予備研削加工を終了させ、仕上げ研削加工を開始させる。その後、仕上げ研削加工は研削速度Ｖ２で進行する。 Next, as shown in FIG. 4, when the current time reaches time t 2 , the drive control unit 31 controls the head drive mechanism 25 to lower the feeding speed (lowering speed) V < b > 1 of the grinding head 20. The speed is switched to the speed V2, the preliminary grinding process is finished, and the finish grinding process is started. Thereafter, the finish grinding process proceeds at the grinding speed V2.

その後の時刻ｔＢ１で、駆動制御部３１は、ヘッド駆動機構２５を制御して被削面２ａから研削ヘッド２０を離間させて仕上げ研削加工を中断させる。駆動制御部３１は、時刻ｔＢ１〜ｔＢ２の間、ヘッド駆動機構２５を制御して研削ヘッド２０を上昇させることにより被削面２ａと研削パッド２２との間に間隙を形成する。ノズル２７ａから供給されている研削液は、その間隙を満たしつつ研削ヘッド２０の相対回転に伴い間隙を流通することとなる。上記した予備研削加工の場合と同様に、間隙の大きさは、研削液が間隙を完全に流通することができる大きさであればよく、たとえば、５００μｍ程度にすればよい。 At time t B1 thereafter, the drive control unit 31 controls the head drive mechanism 25 to separate the grinding head 20 from the work surface 2a and interrupt the finish grinding. The drive control unit 31 controls the head drive mechanism 25 to raise the grinding head 20 between times t B1 and t B2 to form a gap between the work surface 2a and the grinding pad 22. The grinding fluid supplied from the nozzle 27a circulates through the gap with the relative rotation of the grinding head 20 while filling the gap. As in the case of the above-described pre-grinding process, the size of the gap may be a size that allows the grinding fluid to completely flow through the gap, and may be, for example, about 500 μm.

時刻ｔＢ２で、駆動制御部３１は、ヘッド駆動機構２５を制御して研削ヘッド２０の速度を上昇速度から下降速度に切り替える。この結果、研削ヘッド２０は、被削面２ａの方向に移動して間隙を流通する研削液に圧力を加えるので、間隙を流通する研削液の液圧が上昇することとなる。その後の時刻ｔＢ３で、研削パッド２２，…，２２が再び被削面２ａに接触すると、半導体ウエハ２に対する仕上げ研削加工が再開される。その後、仕上げ研削加工は研削速度Ｖ２で続行される。 At time tB2 , the drive control unit 31 controls the head drive mechanism 25 to switch the speed of the grinding head 20 from the ascending speed to the descending speed. As a result, the grinding head 20 moves in the direction of the work surface 2a and applies pressure to the grinding fluid flowing through the gap, so that the hydraulic pressure of the grinding fluid flowing through the gap increases. When the grinding pads 22,..., 22 come into contact with the work surface 2a again at the subsequent time tB3 , the finish grinding for the semiconductor wafer 2 is resumed. Thereafter, the finish grinding is continued at the grinding speed V2.

上記したように駆動制御部３１は、半導体ウエハ２の厚さが仕上げ厚さに到達する前に、仕上げ研削加工を中断し、研削ヘッド２０の動作を下降動作から上昇動作に切り替えて研削パッド２２と被削面２ａとの間に間隙を形成し、この間隙に液圧の高い研削液を流通させる（時刻ｔＢ１〜ｔＢ３）。これにより、研削パッド２２を洗浄して研削パッド２２に付着している研削屑を除去することができ、研削パッド２２の高い研削能力を再生あるいは維持することができる。したがって、半導体ウエハ２の仕上げ厚さの精度や被削面２ａの加工精度（平坦性など）を向上させることができる。 As described above, the drive control unit 31 interrupts the finish grinding before the thickness of the semiconductor wafer 2 reaches the finish thickness, and switches the operation of the grinding head 20 from the descending operation to the ascending operation, thereby grinding pad 22. A gap is formed between the cutting surface 2a and the work surface 2a, and a grinding fluid having a high hydraulic pressure is circulated through the gap (time t B1 to t B3 ). As a result, the grinding pad 22 can be cleaned to remove grinding debris adhering to the grinding pad 22, and the high grinding ability of the grinding pad 22 can be regenerated or maintained. Therefore, the accuracy of the finished thickness of the semiconductor wafer 2 and the processing accuracy (flatness, etc.) of the work surface 2a can be improved.

その後、図４に示されるように、現在時刻が時刻ｔ３に達すると、駆動制御部３１は、ヘッド駆動機構２５を制御して研削ヘッド２０の下降速度Ｖ１を上昇速度Ｖ３に切り替えて、仕上げ研削加工を終了させる。 Thereafter, as shown in FIG. 4, when the current time reaches the time t 3, the drive control unit 31 switches the lowering speed V1 of the grinding head 20 to increase the speed V3 controls the head driving mechanism 25, finishing Finish the grinding process.

以上に説明したように本実施形態に係る研削方法は、研削加工の途中で、半導体ウエハ２の被削面２ａと研削パッド２２との間に間隙を形成し、この間隙に液圧の高い研削液を流通させるので、研削パッド２２の表面に付着した研削屑を除去し、研削パッド２２の高い研削能力を再生あるいは維持することができる。   As described above, in the grinding method according to the present embodiment, a gap is formed between the work surface 2a of the semiconductor wafer 2 and the grinding pad 22 during the grinding process, and a grinding fluid having a high hydraulic pressure is formed in the gap. Therefore, the grinding dust adhering to the surface of the grinding pad 22 can be removed, and the high grinding ability of the grinding pad 22 can be regenerated or maintained.

図５は、図４に示した加工シーケンスと対比するための比較例の加工シーケンスを示すグラフである。図５に示されるように時刻ｔ１〜ｔ３の間に予備研削加工及び仕上げ研削加工を連続的に実行すると、研削パッド２２に研削屑が固着することがある。研削パッド２２に研削屑が固着すれば、被削面２ａの加工精度が低下し、研削パッド２２から強固に固着した研削屑を除去する作業が必要となる。これに対し、本実施形態に係る研削方法は、研削加工を一時的に中断して半導体ウエハ２の被削面２ａと研削パッド２２との間に研削液が流通する間隙を形成し、その後、研削加工を続行するので、研削パッド２２に研削屑が強固に固着する前にその研削屑を容易に除去することができる。また、研削加工の工程中、研削パッド２２は高い研削能力を発揮し続けることができる。たとえば、金属配線を含む樹脂層の研削加工を行う場合でも、研削加工の工程において研削パッド２２は高い研削能力を発揮し続けることができる。 FIG. 5 is a graph showing a machining sequence of a comparative example for comparison with the machining sequence shown in FIG. As shown in FIG. 5, if the pre-grinding process and the finish grinding process are continuously performed between the times t 1 to t 3 , the grinding scraps may adhere to the grinding pad 22. If grinding debris adheres to the grinding pad 22, the processing accuracy of the work surface 2 a is lowered, and it is necessary to remove the grinding debris firmly adhered from the grinding pad 22. On the other hand, in the grinding method according to the present embodiment, the grinding process is temporarily interrupted to form a gap through which the grinding fluid flows between the work surface 2a of the semiconductor wafer 2 and the grinding pad 22, and then grinding is performed. Since the processing is continued, the grinding waste can be easily removed before the grinding waste firmly adheres to the grinding pad 22. Further, during the grinding process, the grinding pad 22 can continue to exhibit high grinding ability. For example, even when the resin layer including the metal wiring is ground, the grinding pad 22 can continue to exhibit high grinding ability in the grinding process.

上記した本実施形態に係る研削方法を使用することにより、半導体ウエハ２に形成される半導体装置の生産能力の向上と歩留まりの向上とを実現することができる。   By using the grinding method according to this embodiment described above, it is possible to improve the production capacity and the yield of the semiconductor device formed on the semiconductor wafer 2.

以上、図面を参照して本発明の実施形態について述べたが、これらは本発明の例示であり、上記以外の様々な形態を採用することができる。たとえば、図４に示した加工シーケンスでは、研削速度がＶ１からＶ２に１回変速しているが、これに限定されるものではない。研削速度を２回以上変速させてもよい。   As mentioned above, although embodiment of this invention was described with reference to drawings, these are illustrations of this invention and can employ | adopt various forms other than the above. For example, in the machining sequence shown in FIG. 4, the grinding speed is changed once from V1 to V2, but the present invention is not limited to this. The grinding speed may be changed twice or more.

また、駆動制御部３１は、測距センサを用いて半導体ウエハ２の被削面２ａの高さをリアルタイムに計測し、その計測結果に基づいて半導体ウエハ２の厚さを測定し、その測定結果に基づいて研削速度（送り込み速度）を制御する機能を有していてもよい。   Further, the drive control unit 31 measures the height of the work surface 2a of the semiconductor wafer 2 in real time using a distance measuring sensor, measures the thickness of the semiconductor wafer 2 based on the measurement result, and determines the measurement result. It may have a function of controlling the grinding speed (feeding speed) based on it.

１ 研削装置、 ２ 半導体ウエハ（ワーク）、 ２ａ 被削面、 １０ テーブル駆動機構、 １１ 真空吸着テーブル、 ２０ 研削ヘッド、 ２１ 回転盤、 ２２ 研削パッド（研削砥石）、 ２５ ヘッド駆動機構、 ２７ 研削液供給部、 ２７ａ ノズル、 ３０ 研削制御部、 ３１ 駆動制御部、 ３２ 配液制御部、 ３５ 操作パネル。   DESCRIPTION OF SYMBOLS 1 Grinding device, 2 Semiconductor wafer (workpiece), 2a Work surface, 10 Table drive mechanism, 11 Vacuum suction table, 20 Grinding head, 21 Turning board, 22 Grinding pad (grinding wheel), 25 Head drive mechanism, 27 Grinding fluid supply Part, 27a nozzle, 30 grinding control part, 31 drive control part, 32 liquid distribution control part, 35 operation panel.

Claims (9)

第１の主面に形成された金属メッキ膜と、前記第１の主面及び前記金属メッキ膜を封止する樹脂層とを備え、前記金属メッキ膜と前記樹脂層とが備えられた側を被削面とする半導体ウエハを、テーブルに保持するウエハ保持工程と、
研削砥石を前記半導体ウエハの前記被削面に接触させ、前記被削面に対して前記研削砥石を相対的に摺動させながら前記研削砥石と前記テーブルとの間隔を狭めることにより、前記半導体ウエハの前記金属メッキ膜と前記樹脂層とに研削加工を施す研削工程と、
前記研削工程の途中で、前記研削砥石を前記半導体ウエハから離間させて前記半導体ウエハの当該被削面と前記研削砥石との間に間隙を形成し、前記間隙に研削液を流通させる研削面洗浄工程と、
を含むことを特徴とする研削方法。 A metal plating film formed on the first main surface; a resin layer that seals the first main surface and the metal plating film; and a side on which the metal plating film and the resin layer are provided. A wafer holding step for holding a semiconductor wafer as a work surface on a table;
The grinding wheel is brought into contact with the workpiece surface of the semiconductor wafer, said by narrowing the distance between said while the grinding wheel is relatively sliding the grinding wheel and the table relative to the work surface, the said semiconductor wafer A grinding step of grinding the metal plating film and the resin layer ;
In the course of the grinding process, the grinding wheel cleaning step of separating the grinding wheel from the semiconductor wafer to form a gap between the work surface of the semiconductor wafer and the grinding wheel, and circulating the grinding liquid through the gap When,
A grinding method comprising: 請求項１に記載の研削方法であって、前記研削砥石を前記半導体ウエハに向けて相対移動させて前記間隙を流通する研削液の液圧を上昇させる工程をさらに含むことを特徴とする研削方法。   2. The grinding method according to claim 1, further comprising a step of increasing the hydraulic pressure of the grinding fluid flowing through the gap by relatively moving the grinding wheel toward the semiconductor wafer. . 請求項２に記載の研削方法であって、前記研削砥石を前記半導体ウエハの前記被削面に再び接触させて前記研削加工を続行させる工程をさらに含むことを特徴とする研削方法。 A grinding method according to claim 2, grinding method, characterized in that said grinding wheel into contact again with the workpiece surface of the semiconductor wafer further comprises the step of continuing the grinding. 請求項３に記載の研削方法であって、前記間隙は、前記半導体ウエハの厚さが仕上げ厚さに到達する前に形成されることを特徴とする研削方法。   The grinding method according to claim 3, wherein the gap is formed before the thickness of the semiconductor wafer reaches a finished thickness. 請求項１から４のうちのいずれか１項に記載の研削方法であって、前記研削液の主成分は水であることを特徴とする研削方法。   5. The grinding method according to claim 1, wherein a main component of the grinding liquid is water. 6. 研削砥石と、
第１の主面に形成された金属メッキ膜と、前記第１の主面及び前記金属メッキ膜を封止する樹脂層とを備え、前記金属メッキ膜と前記樹脂層とが備えられた側を被削面とする半導体ウエハが載置されるテーブルと、
前記半導体ウエハに対して近接または離間する方向に前記研削砥石を相対移動させる第１の駆動部と、
前記半導体ウエハの被削面に前記研削砥石が接触した状態で前記被削面に対して前記研削砥石を相対的に摺動させる第２の駆動部と、
前記第１の駆動部及び前記第２の駆動部の各々を制御する駆動制御部と、
前記半導体ウエハの当該被削面に研削液を供給する研削液供給部と、
を備え、
前記駆動制御部は、
前記第１の駆動部を制御して前記研削砥石を前記半導体ウエハの前記被削面に接触させ、前記第２の駆動部を制御して前記被削面に対して前記研削砥石を相対的に摺動させながら前記研削砥石と前記テーブルとの間隔を狭めることにより、前記半導体ウエハの前記金属メッキ膜と前記樹脂層とに研削加工を施す研削工程と、
前記研削工程の途中で、前記第１の駆動部を制御して前記研削砥石を前記半導体ウエハから離間させて前記被削面と前記研削砥石との間に間隙を形成し、前記間隙に前記研削液を流通させる研削面洗浄工程と、
を順次実行することを特徴とする研削装置。 A grinding wheel,
A metal plating film formed on the first main surface; a resin layer that seals the first main surface and the metal plating film; and a side on which the metal plating film and the resin layer are provided. A table on which a semiconductor wafer to be machined is placed;
A first drive unit that relatively moves the grinding wheel in a direction approaching or separating from the semiconductor wafer;
A second drive unit for sliding the grinding wheel relative to the work surface in a state where the grinding wheel is in contact with the work surface of the semiconductor wafer;
A drive control unit for controlling each of the first drive unit and the second drive unit;
A grinding fluid supply section for supplying a grinding fluid to the work surface of the semiconductor wafer;
With
The drive control unit
The first controls the driving unit is brought into contact with the grinding wheel on the workpiece surface of the semiconductor wafer, relatively sliding the grinding wheel by controlling the second driving portion with respect to the workpiece surface by narrowing the gap between the grinding wheel and the table while, and the grinding step of performing grinding and the metal plating layer of the semiconductor wafer and the resin layer,
In the middle of the grinding step , the first driving unit is controlled to separate the grinding wheel from the semiconductor wafer to form a gap between the work surface and the grinding wheel, and the grinding liquid is formed in the gap. Grinding surface cleaning process to distribute,
A grinding apparatus characterized by sequentially executing. 請求項６に記載の研削装置であって、前記研削面洗浄工程は、前記第１の駆動部を制御して前記研削砥石を前記半導体ウエハの当該被削面に向けて相対移動させて前記間隙を流通する研削液の液圧を上昇させる工程を含むことを特徴とする研削装置。 7. The grinding apparatus according to claim 6 , wherein the grinding surface cleaning step controls the first driving unit to relatively move the grinding wheel toward the work surface of the semiconductor wafer so as to form the gap. A grinding apparatus comprising a step of increasing a fluid pressure of a circulating grinding fluid. 請求項７に記載の研削装置であって、前記駆動制御部は、前記研削面洗浄工程の後に、前記第１の駆動部を制御して前記研削砥石を前記半導体ウエハの前記被削面に再び接触させ、前記第２の駆動部を制御して前記研削加工を続行させることを特徴とする研削装置。 A grinding apparatus according to claim 7, wherein the drive control unit, after the grinding surface cleaning step, again contacting the grinding wheel by controlling the first driving unit to the workpiece surface of the semiconductor wafer And the grinding process is continued by controlling the second drive unit. 請求項８に記載の研削装置であって、前記間隙は、前記半導体ウエハの厚さが仕上げ厚さに到達する前に形成されることを特徴とする研削装置。 9. The grinding apparatus according to claim 8 , wherein the gap is formed before the thickness of the semiconductor wafer reaches a finished thickness.
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