CN106356420A - Heterogenous junction type photoelectric detector and preparation method thereof - Google Patents
Heterogenous junction type photoelectric detector and preparation method thereof Download PDFInfo
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- CN106356420A CN106356420A CN201610892215.8A CN201610892215A CN106356420A CN 106356420 A CN106356420 A CN 106356420A CN 201610892215 A CN201610892215 A CN 201610892215A CN 106356420 A CN106356420 A CN 106356420A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 75
- 239000002070 nanowire Substances 0.000 claims abstract description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 97
- 229910052693 Europium Inorganic materials 0.000 claims description 83
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 83
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 60
- 235000012239 silicon dioxide Nutrition 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 29
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 29
- 229910052737 gold Inorganic materials 0.000 claims description 29
- 239000010931 gold Substances 0.000 claims description 29
- 239000000377 silicon dioxide Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229960001296 zinc oxide Drugs 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 150000001336 alkenes Chemical class 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 235000012149 noodles Nutrition 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- -1 oxidation Kazakhstan Chemical compound 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a heterogenous junction type photoelectric detector and a preparation method thereof. The heterogenous junction type photoelectric detector is formed by a p type Eu-doped ZnO nanowires and n type graphene. The photoelectric detector provided by the invention is very sensitive to visible light; the response degree and the gain are high; in addition, the response speed is high; good foundation is provided for the application and integration of nanometer materials in a photoelectric device.
Description
Technical field
The present invention relates to the heterojunction type photoelectric detector of a kind of europium doped zinc oxide nano-wire and N-shaped Graphene and its system
Preparation Method.
Background technology
Photodetector refers to be caused a kind of physical phenomenon of illuminated material electric conductivity change by radiation.Photodetector
There is extensive use in military and national economy every field.It is mainly used in radionetric survey and spy in visible ray or near infrared band
Survey, industry automatic control, Photometric Measurement etc.；It is mainly used in the side such as missile guidance, infrared thermal imaging, infrared remote sensing in infrared band
Face.
Photodetector can be converted to the signal of telecommunication optical signal.According to the mode difference device in other words to rdaiation response for the device
The mechanism of part work is different, and photodetector can be divided into two big class: a class is photon detector；Another kind of is thermal detector.Root
Photoconduction type and junction type (hetero-junctions) photodetector can be divided into according to device architecture.Photoconduction is because photon is in quasiconductor
Middle when being absorbed, produce caused by moveable carrier.Nano semiconductor photodetector is all based on light mostly at present
Conductivity type structure, due to the restriction of interelectrode carrier transport time, the performance such as its speed, response time is all poor.Photoelectricity
The response speed of detector determines it and follows the ability of optical signalling rapid translating, has pole in light wave communication and optical communication
Its important effect.Slower response speed is seriously limited application in photoelectric device integrated circuit for the photodetector.
Content of the invention
The present invention is intended to provide a kind of heterojunction type photoelectric detector and preparation method thereof, technical problem to be solved is
Improve the response speed of photodetector and the stability of performance, and simplify preparation method as far as possible and be adapted to industrialized production.
The hetero-junctions of heterojunction type photoelectric detector of the present invention is by p europium doped zinc oxide nano-wire and N-shaped Graphene structure
Become.
The present invention solves technical problem and adopts the following technical scheme that heterojunction type photoelectric detector of the present invention has following knot
Structure: be covered with silicon dioxide layer 2 on the surface of silicon base 1, have the europium doping zinc-oxide of tiling in the Dispersion on surface of silicon dioxide layer 2
Nano wire 4, is respectively arranged with Ohmic electrode 3 as exporting a pole, described Europe at the two ends of described europium doped zinc oxide nano-wire 4
Nurse electrode 3 and described europium doped zinc oxide nano-wire 4 are in Ohmic contact；Submit superimposition in described europium doped zinc oxide nano-wire 4
There is Graphene 5, described Graphene 5 is located between two Ohmic electrodes 3 and is isolated with Ohmic electrode 3；Described Graphene 5 sets
It is equipped with Ohmic electrode 6 as another output stage, described Ohmic electrode 6 and described Graphene 5 are in Ohmic contact and are adulterated oxygen with europium
Change zinc nano wire 4 and Ohmic electrode 3 is isolated；Described europium doped zinc oxide nano-wire 4 is p-type europium doped zinc oxide nano-wire；Institute
Stating Graphene 5 is N-shaped Graphene；Described Ohmic electrode 3 and Ohmic electrode 6 are gold electrode.
The preparation method of heterojunction type photoelectric detector of the present invention is as follows: europium doped zinc oxide nano-wire 4 is distributed to silicon
In the silicon dioxide layer 2 on substrate 1 surface, subsequently a pair of electrodes figure is made by lithography in silicon dioxide layer 2 using ultraviolet photolithographic technology
Case, then obtains a pair of Ohmic electrode 3, described Ohmic electrode 3 and described europium doping oxidation using electron beam coating technique evaporation
Zinc nano wire 4 is in Ohmic contact；Graphene 5 is overlying on the surface of silicon dioxide layer 2, using ultraviolet photolithographic technology in silicon dioxide
Make by lithography on layer 2 and europium doped zinc oxide nano-wire 4 is overlapped and is located between two Ohmic electrodes 3 and isolated with Ohmic electrode 3
Electrode pattern, then bombard the Graphene removing beyond electrode pattern using oxygen plasma and obtain Graphene 5, recycle ultraviolet
Photoetching technique and electron beam coating technique prepare Ohmic electrode 6, and described Ohmic electrode 6 and Graphene 5 form Ohmic contact
And isolate with europium doped zinc oxide nano-wire 4 and Ohmic electrode 3.
Heterojunction type photoelectric detector of the present invention has following structure: it is covered with silicon dioxide layer 8 on the surface of silicon base 7,
The tiling on the surface of silicon dioxide layer 8 has Graphene 9, is provided with insulating barrier 10, in the table of described insulating barrier 10 on Graphene 9
Face is dispersed with europium doped zinc oxide nano-wire 11 and a part for described europium doped zinc oxide nano-wire 11 is contacted with Graphene 9；
Ohmic electrode 12 is provided with insulating barrier 10, described Ohmic electrode 12 and europium doped zinc oxide nano-wire 11 are in Ohmic contact；
Ohmic electrode 13, described Ohmic electrode 13 and insulating barrier 10, Ohmic electrode 12 and europium doping zinc-oxide are provided with Graphene 9
Nano wire 11 is isolated；Described europium doped zinc oxide nano-wire 11 is p-type europium doped zinc oxide nano-wire；Described Graphene 9 is N-shaped
Graphene；Described Ohmic electrode 3 and Ohmic electrode 6 are gold electrode.
The preparation method of heterojunction type photoelectric detector of the present invention is as follows: Graphene 9 is tiled to the two of silicon base 7 surface
On silicon oxide layer 8, insulating barrier 10 is prepared on the surface of Graphene 9 using ultraviolet photolithographic and magnetron sputtering technology, europium is mixed
The marginal position that miscellaneous zinc oxide nanowire 11 is distributed on insulating barrier 10 make described europium doped zinc oxide nano-wire 11 have part with
Graphene 9 overlapping contact, prepares Ohmic electrode 12, institute using ultraviolet photolithographic technology and electron beam coating technique on insulating barrier 10
Stating Ohmic electrode 12 with described europium doped zinc oxide nano-wire 11 is in Ohmic contact；Reuse ultraviolet photolithographic technology and electron beam
Coating technique prepares Ohmic electrode 13, described Ohmic electrode 13 and insulating barrier 10, Ohmic electrode 12 and europium doping on Graphene 9
Zinc oxide nanowire 11 is isolated.
Described insulating barrier 10 is selected from silicon nitride (si3n4), oxidation breathe out (hfo2), zirconium oxide (zro2), aluminium oxide (al2o3) or
Silicon dioxide (sio2), the thickness of insulating barrier 10 is 10 nanometers to 10 microns.
The thickness of gold electrode of the present invention is 100nm.
The p-type europium doped zinc oxide nano-wire 4 that the present invention uses and N-shaped Graphene 5 are using chemistry according to prior art
CVD method synthesizes in horizontal tube quartz stove.
Compared with the prior art, the present invention has the beneficial effect that: the present invention relates to a kind of technique is relatively simple, cost
Cheap method is prepared for p-type titanium oxide and N-shaped Graphene heterojunction type photoelectric detector.Due to interface in it in electric field
Acceleration, hetero-junctions junction type photodetector speed of detection is substantially better than photoconduction type detector.Additionally, Graphene have soft
Property, transparent and high conductivity the features such as, make detector possess the preferable ability receiving detected light, therefore possess relatively
High responsiveness and gain.So, it is built into heterojunction type photoelectric detector using europium doped zinc oxide nano-wire and Graphene
Possess higher detectivity, higher responsiveness, gain and speed of detection faster, be conducive to photodetector quick
Application in integrated optoelectronic circuit.
Brief description
Fig. 1 is shown with the structure of N-shaped Graphene heterojunction type photoelectric detector for p-type europium doped zinc oxide nano-wire of the present invention
It is intended to.
In figure label: 1 is silicon base；2 is silicon dioxide layer；3 is Ohmic electrode；4 is europium doped zinc oxide nano-wire；5
For Graphene；6 is Ohmic electrode.
Fig. 2 is shown with the structure of N-shaped Graphene heterojunction type photoelectric detector for p-type europium doped zinc oxide nano-wire of the present invention
It is intended to.
In figure label: 7 is silicon base；8 is silicon dioxide layer；9 is Graphene；10 is insulating barrier；11 adulterate for europium aoxidizes
Zinc nano wire；12 is Ohmic electrode；13 is Ohmic electrode.
Specific embodiment
Embodiment 1: the present embodiment p-type europium doped zinc oxide nano-wire is had with N-shaped Graphene heterojunction type photoelectric detector
There is following structure: referring to Fig. 1, the europium doping zinc-oxide having tiling in the Dispersion on surface of the silicon base 1 being covered with silicon dioxide layer 2 is received
Rice noodle 4, is respectively arranged with the gold electrode 3 of 100 nanometer thickness as output one at the two ends of described europium doped zinc oxide nano-wire 4
Pole, described gold electrode 3 and described europium doped zinc oxide nano-wire 4 are in Ohmic contact；On described europium doped zinc oxide nano-wire 4
Overlap and be covered with Graphene 5, described Graphene 5 is located between two gold electrodes 3 and is isolated with gold electrode 3；On described Graphene 5
Be provided with the gold electrode 6 of 100 nanometer thickness as another output stage, described gold electrode 6 and described Graphene 5 be in Ohmic contact and with
Europium doped zinc oxide nano-wire 4 and gold electrode 3 are isolated；Wherein europium doped zinc oxide nano-wire 4 is p-type europium doped zinc oxide nano
Line；Described Graphene 5 is N-shaped Graphene.
In the present embodiment, the preparation method of p-type europium doped zinc oxide nano-wire and N-shaped Graphene junction type photodetector is such as
Under: first, synthesize europium doped zinc oxide nano-wire 4 and Graphene using chemical gaseous phase depositing process in horizontal tube quartz stove
5, europium doped zinc oxide nano-wire 4 is distributed to the surface of the silicon base 1 being covered with silicon dioxide layer 2, the thickness of silicon dioxide layer 2
For 300 nanometers, subsequently a pair of electrodes pattern is made by lithography in silicon dioxide layer 2 using ultraviolet photolithographic technology, then utilize electronics
Bundle coating technique evaporation obtains the gold electrode 3 of a pair 100 nanometer thickness, described gold electrode 3 and described europium doped zinc oxide nano-wire 4
In Ohmic contact；Graphene 5 is overlying on the surface of silicon dioxide layer 2, using the photoetching in silicon dioxide layer 2 of ultraviolet photolithographic technology
Go out and europium doped zinc oxide nano-wire 4 overlap and be located at two gold electrodes 3 between and with gold electrode 3 isolation electrode pattern, so
Graphene beyond bombarding removing electrode pattern using oxygen plasma afterwards obtains Graphene 5, recycles ultraviolet photolithographic technology and electricity
Beamlet coating technique prepares the gold electrode 6 of 100 nanometer thickness, and described gold electrode 6 and Graphene 5 form Ohmic contact and and europium
Doped zinc oxide nano-wire 4 and gold electrode 3 are isolated, and form hetero-junctions by europium doped zinc oxide nano-wire 4 and Graphene 5.
Embodiment 2: as shown in Fig. 2 the present embodiment p-type europium doped zinc oxide nano-wire and N-shaped Graphene heterojunction type light
Electric explorer has following structure: the tiling on the surface of the silicon base 7 being covered with silicon dioxide layer 8 has Graphene 9, in Graphene 9
On be provided with the insulating barrier 10 of 30 nanometer thickness, have europium doped zinc oxide nano-wire 11 and institute in the Dispersion on surface of described insulating barrier 10
The part stating europium doped zinc oxide nano-wire 11 is contacted with Graphene 9；The gold electricity of 100 nanometer thickness is provided with insulating barrier 10
Pole 12, described gold electrode 12 and europium doped zinc oxide nano-wire 11 are in Ohmic contact；100 nanometer thickness are provided with Graphene 9
Gold electrode 13, described gold electrode 13 isolated with insulating barrier 10, gold electrode 12 and europium doped zinc oxide nano-wire 11；Described europium is mixed
Miscellaneous zinc oxide nanowire 11 is p-type europium doped zinc oxide nano-wire；Described Graphene 9 is N-shaped Graphene.
Insulating barrier 10 described in the present embodiment is silicon nitride.
In the present embodiment, the preparation method of p-type europium doped zinc oxide nano-wire and N-shaped Graphene junction type photodetector is such as
Under: first, synthesize europium doped zinc oxide nano-wire 11 and graphite using chemical gaseous phase depositing process in horizontal tube quartz stove
Alkene 9, the surface of the silicon base 7 being covered with silicon dioxide layer 8 that Graphene 9 is tiled, using ultraviolet photolithographic and magnetron sputtering plating
Technology prepares the insulating barrier 10 of 30 nanometer thickness on the surface of Graphene 9, and europium doped zinc oxide nano-wire 11 is distributed to insulating barrier
Marginal position on 10 makes described europium doped zinc oxide nano-wire 11 have part and Graphene 9 overlapping contact, using ultraviolet photolithographic
Technology and electron beam coating technique prepare the gold electrode 12 of 100 nanometer thickness, described gold electrode 12 and described europium on insulating barrier 10
Doped zinc oxide nano-wire 11 is in Ohmic contact；Reuse ultraviolet photolithographic technology and electron beam coating technique on Graphene 9
Prepare the gold electrode 13 of 100 nanometer thickness, described gold electrode 13 and insulating barrier 10, gold electrode 12 and europium doped zinc oxide nano-wire 11
Isolation.
Claims (5)
1. a kind of heterojunction type photoelectric detector based on europium doped zinc oxide nano-wire, is characterized in that thering is following structure:
The surface of silicon base (1) is covered with silicon dioxide layer (2), and the europium having tiling in the Dispersion on surface of silicon dioxide layer (2) adulterates and aoxidizes
Zinc nano wire (4), is respectively arranged with Ohmic electrode (3) as output one at the two ends of described europium doped zinc oxide nano-wire (4)
Pole, described Ohmic electrode (3) and described europium doped zinc oxide nano-wire (4) are in Ohmic contact；Receive in described europium doping zinc-oxide
Superimposition submitted by rice noodle (4) Graphene (5), and described Graphene (5) is located between two Ohmic electrodes (3) and and Ohmic electrode
(3) isolate；Ohmic electrode (6) is provided with described Graphene (5) as another output stage, described Ohmic electrode (6) and institute
State Graphene (5) to be in Ohmic contact and isolate with europium doped zinc oxide nano-wire (4) and Ohmic electrode (3)；Described europium doping oxygen
Changing zinc nano wire (4) is p-type europium doped zinc oxide nano-wire；Described Graphene (5) is N-shaped Graphene；Described Ohmic electrode (3)
It is gold electrode with Ohmic electrode (6).
2. the preparation side of the heterojunction type photoelectric detector based on europium doped zinc oxide nano-wire described in a kind of claim 1
Method is it is characterised in that prepare as follows: europium doped zinc oxide nano-wire (4) is distributed to the dioxy on silicon base (1) surface
On SiClx layer (2), subsequently a pair of electrodes pattern is made by lithography in silicon dioxide layer (2) using ultraviolet photolithographic technology, then utilize
Electron beam coating technique evaporation obtains a pair of Ohmic electrode (3), described Ohmic electrode (3) and described europium doped zinc oxide nano-wire
(4) it is in Ohmic contact；Graphene (5) is overlying on the surface of silicon dioxide layer (2), using ultraviolet photolithographic technology in silicon dioxide layer
(2) make by lithography on and europium doped zinc oxide nano-wire (4) overlaps and is located between two Ohmic electrodes (3) and and Ohmic electrode
(3) electrode pattern isolated, the Graphene beyond then bombarding removing electrode pattern using oxygen plasma obtains Graphene (5),
Ultraviolet photolithographic technology and electron beam coating technique is recycled to prepare Ohmic electrode (6), described Ohmic electrode (6) and Graphene
(5) form Ohmic contact and isolate with europium doped zinc oxide nano-wire (4) and Ohmic electrode (3).
3. a kind of heterojunction type photoelectric detector based on europium doped zinc oxide nano-wire, is characterized in that thering is following structure:
The surface of silicon base (7) is covered with silicon dioxide layer (8), and the tiling on the surface of silicon dioxide layer (8) has Graphene (9), in graphite
Insulating barrier (10) is provided with alkene (9), the Dispersion on surface of described insulating barrier (10) have europium doped zinc oxide nano-wire (11) and
A part for described europium doped zinc oxide nano-wire (11) is contacted with Graphene (9)；Ohm electricity is provided with insulating barrier (10)
Pole (12), described Ohmic electrode (12) and europium doped zinc oxide nano-wire (11) are in Ohmic contact；Graphene (9) is provided with
Ohmic electrode (13), described Ohmic electrode (13) and insulating barrier (10), Ohmic electrode (12) and europium doped zinc oxide nano-wire
(11) isolate；Described europium doped zinc oxide nano-wire (11) is p-type europium doped zinc oxide nano-wire；Described Graphene (9) is N-shaped
Graphene；Described Ohmic electrode (3) and Ohmic electrode (6) are gold electrode.
4. the heterojunction type photoelectric detector based on europium doped zinc oxide nano-wire according to claim 3, its feature exists
In: described insulating barrier (10) is selected from silicon nitride, oxidation Kazakhstan, zirconium oxide, aluminium oxide or silicon dioxide.
5. the preparation of the heterojunction type photoelectric detector based on europium doped zinc oxide nano-wire described in a kind of claim 3 or 4
Method is it is characterised in that prepare as follows: the silicon dioxide layer (8) on silicon base (7) surface that Graphene (9) is tiled to
On, insulating barrier (10) is prepared on the surface of Graphene (9) using ultraviolet photolithographic and magnetron sputtering technology, europium is adulterated and aoxidizes
The marginal position that zinc nano wire (11) is distributed on insulating barrier (10) make described europium doped zinc oxide nano-wire (11) have part with
Graphene (9) overlapping contact, prepares Ohmic electrode using ultraviolet photolithographic technology and electron beam coating technique on insulating barrier (10)
(12), described Ohmic electrode (12) and described europium doped zinc oxide nano-wire (11) are in Ohmic contact；Reuse ultraviolet photolithographic
Technology and electron beam coating technique prepare Ohmic electrode (13), described Ohmic electrode (13) and insulating barrier on Graphene (9)
(10), Ohmic electrode (12) and europium doped zinc oxide nano-wire (11) isolation.
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| CN201610892215.8A CN106356420A (en) | 2016-10-13 | 2016-10-13 | Heterogenous junction type photoelectric detector and preparation method thereof |
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| CN201610892215.8A CN106356420A (en) | 2016-10-13 | 2016-10-13 | Heterogenous junction type photoelectric detector and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109742178A (en) * | 2019-01-29 | 2019-05-10 | 西安工业大学 | A kind of infrared highly sensitive visible-light detector and preparation method thereof |
| CN111446333A (en) * | 2020-04-23 | 2020-07-24 | 上海纳米技术及应用国家工程研究中心有限公司 | Construction method of near-infrared self-driven photoelectric detector based on semiconductor nanowire/graphene |
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| CN111446333A (en) * | 2020-04-23 | 2020-07-24 | 上海纳米技术及应用国家工程研究中心有限公司 | Construction method of near-infrared self-driven photoelectric detector based on semiconductor nanowire/graphene |
| CN111446333B (en) * | 2020-04-23 | 2022-07-29 | 上海纳米技术及应用国家工程研究中心有限公司 | Construction method of near-infrared self-driven photoelectric detector based on semiconductor nanowire/graphene |
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