CN106356287B - The preparation method and semiconductor structure of low-temperature polysilicon film - Google Patents
The preparation method and semiconductor structure of low-temperature polysilicon film Download PDFInfo
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- CN106356287B CN106356287B CN201610861310.1A CN201610861310A CN106356287B CN 106356287 B CN106356287 B CN 106356287B CN 201610861310 A CN201610861310 A CN 201610861310A CN 106356287 B CN106356287 B CN 106356287B
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 63
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 230000007704 transition Effects 0.000 claims abstract description 79
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 25
- 239000012528 membrane Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000005224 laser annealing Methods 0.000 claims abstract description 11
- 238000002425 crystallisation Methods 0.000 claims abstract description 10
- 230000008025 crystallization Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000004880 explosion Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 46
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000280 densification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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Abstract
The present invention provides a kind of preparation method of low-temperature polysilicon film and semiconductor structures, wherein the preparation method of the low-temperature polysilicon film includes: offer substrate；Transition zone is formed on the substrate；Multiple functional areas spaced apart are formed in the transition zone, each more surrounding transition zone heating conduction in functional areas is poor；Amorphous silicon membrane is formed on the transition zone；Crystallization is carried out to the amorphous silicon membrane using excimer laser annealing process, obtains low-temperature polysilicon film.By being formed with multiple functional areas spaced apart in transition zone, each more surrounding transition zone heating conduction in functional areas is poor, thus during obtaining low-temperature polysilicon film to amorphous silicon membrane progress crystallization using excimer laser annealing process, the amorphous silicon membrane corresponds to different cooling rates everywhere, so that low-temperature polysilicon film crystal grain carries out lateral generation, the uniformity for being formed by low-temperature polysilicon film thus can be improved.
Description
Technical field
The present invention relates to display fabrication techniques field, in particular to the preparation method of a kind of low-temperature polysilicon film and half
Conductor structure.
Background technique
Currently, common active type array liquid crystal display mostly uses amorphous silicon film transistor and polysilicon membrane crystal
Pipe.Wherein, polycrystalline SiTFT (Thin Film Transistor, abbreviation TFT) is due to electron transfer with higher
Rate, faster response speed, can substantially reduce size of components, high resolution, can make Driving Integrate Circuit aperture opening ratio height
The advantages that, the high frequency for being more suitable for large capacity is shown, is conducive to the yield rate for improving display and reduces production cost, and obtain
To being widely applied.
Production low-temperature polysilicon film often uses quasi-molecule laser annealing method, and the basic principle of this method is to utilize high-energy
Excimer laser irradiation to amorphous silicon membrane surface, melt amorphous silicon, be cooling, recrystallization, realizing from amorphous silicon to polycrystalline
The transformation of silicon.The crystal grain of the low-temperature polysilicon film of quasi-molecule laser annealing method preparation is big, spatial selectivity is good, intracrystalline imperfection
Less, electrology characteristic is good, it has also become the main method of low-temperature polysilicon film preparation at present.
And in the prior art, it is difficult to realize the preparation of uniform low-temperature polysilicon film, meanwhile, low-temperature polysilicon film
The uniformity of crystal grain has a major impact the electric property of low-temperature polysilicon film.Therefore, uniform low temperature how is prepared
A polysilicon membrane problem urgently to be resolved at those skilled in the art.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation method of low-temperature polysilicon film and semiconductor structures, existing to solve
The problem for having the uniformity of the low-temperature polysilicon film in technology inadequate.
In order to solve the above technical problems, the present invention provides a kind of preparation method of low-temperature polysilicon film, the low temperature is more
The preparation method of polycrystal silicon film includes:
Substrate is provided；
Transition zone is formed on the substrate；
Multiple functional areas spaced apart, each more surrounding transition zone thermal conductivity in functional areas are formed in the transition zone
It can be poor；
Amorphous silicon membrane is formed on the transition zone；
Crystallization is carried out to the amorphous silicon membrane using excimer laser annealing process, obtains low-temperature polysilicon film.
Optionally, in the preparation method of the low-temperature polysilicon film, each functional areas include dense area and are located at
Cavity in the dense area, wherein the material density of the more surrounding transition zone of the material density of the dense area is high.
Optionally, in the preparation method of the low-temperature polysilicon film, multiple functional areas are uniformly distributed in described
In transition zone.
Optionally, in the preparation method of the low-temperature polysilicon film, each functional areas are spherical structure, Mei Gegong
The diameter in energy area is 200nm~400nm.
Optionally, in the preparation method of the low-temperature polysilicon film, the centre of sphere distance of two neighboring functional areas is 1
μm~5 μm.
Optionally, in the preparation method of the low-temperature polysilicon film, by the following method in the transition zone
Form multiple functional areas spaced apart:
Laser is focused in the transition zone；
Explosion is formed in the transition zone, obtains multiple functional areas.
Optionally, in the preparation method of the low-temperature polysilicon film, laser is focused in the transition zone and is wrapped
It includes:
In the transition zone overhead, lenticule is set；
Femtosecond laser is set to pass through the lenticule into the transition zone.
Optionally, in the preparation method of the low-temperature polysilicon film, the transition zone is silicon oxide layer；The mistake
Cross layer with a thickness of 400nm~600nm.
Optionally, it in the preparation method of the low-temperature polysilicon film, is formed before transition zone on the substrate,
The preparation method of the low-temperature polysilicon film further include:
Silicon nitride layer is formed on the substrate；Wherein, the transition zone is located on the silicon nitride layer.
The present invention also provides a kind of preparation methods using low-temperature polysilicon film as described above to be formed by semiconductor
Structure, the semiconductor structure include: substrate；The transition zone being formed on the substrate；It is formed in more in the transition zone
A functional areas spaced apart, each more surrounding transition zone heating conduction in functional areas are poor；And it is formed on the transition zone
Low-temperature polysilicon film.
In the preparation method of low-temperature polysilicon film provided by the invention and semiconductor structure, it is formed in transition zone
Multiple functional areas spaced apart, each more surrounding transition zone heating conduction in functional areas is poor, is thus moved back using excimer laser
During fire process obtains low-temperature polysilicon film to amorphous silicon membrane progress crystallization, the amorphous silicon membrane corresponds to not everywhere
With cooling rate so that low-temperature polysilicon film crystal grain carries out lateral generation, thus can improve be formed by it is low
The uniformity of warm polysilicon membrane.
Detailed description of the invention
Fig. 1 is the flow diagram of the preparation method of the low-temperature polysilicon film of the embodiment of the present invention；
Fig. 2~Fig. 7 is to form semiconductor structure using the preparation method of the low-temperature polysilicon film of the embodiment of the present invention
It is formed by structural profile illustration in the process.
Specific embodiment
It is led below in conjunction with the drawings and specific embodiments to the preparation method of low-temperature polysilicon film proposed by the present invention and partly
Body structure is described in further detail.According to following explanation and claims, advantages and features of the invention will be become apparent from.It needs
Illustrate, attached drawing is all made of very simplified form and using non-accurate ratio, only to convenient, lucidly auxiliary is said
The purpose of the bright embodiment of the present invention.
Referring to FIG. 1, its flow diagram for the preparation method of the low-temperature polysilicon film of the embodiment of the present invention.Such as figure
Shown in 1, the preparation method of the low-temperature polysilicon film includes:
Step S10: substrate is provided；
Step S11: transition zone is formed on the substrate；
Step S12: multiple functional areas spaced apart, each more surrounding transition in functional areas are formed in the transition zone
Layer heating conduction is poor；
Step S13: amorphous silicon membrane is formed on the transition zone；
Step S14: crystallization is carried out to the amorphous silicon membrane using excimer laser annealing process, obtains low temperature polycrystalline silicon
Film.
Specifically, incorporated by reference to reference Fig. 2~Fig. 7, for using the preparation of the low-temperature polysilicon film of the embodiment of the present invention
Method is formed by structural profile illustration during forming semiconductor structure.
Firstly, as shown in Fig. 2, providing substrate 10.Preferably, the substrate 10 is glass substrate.
In the embodiment of the present application, then, silicon nitride layer 11 is formed on the substrate 10, as shown in Figure 3.By institute
A preferable film formation surface can be provided by stating formation silicon nitride layer 11 on substrate 10, thus after being easy to subsequent film forming and raising
The quality and reliability of continuous film forming.
Then, as shown in figure 4, forming transition zone 12 on the silicon nitride layer 11.In the other embodiments of the application,
The transition zone 12 can also be formed directly on the substrate 10, i.e., do not form silicon nitride between substrate 10 and transition zone 12
Layer.Preferably, the material of the transition zone 12 is silica.Silica is widely used in display fabrication techniques field,
With cheap price and higher stability, therefore it can be used as the preferred materials of transition zone 12.
Further, the transition zone 12 with a thickness of 400nm~600nm.It is subsequent in the transition thus, it is possible to be convenient for
Functional areas are formed in layer 12.
Referring to FIG. 5, then, forming multiple functional areas 13 spaced apart, each functional areas 13 in the transition zone 12
More surrounding 12 heating conduction of transition zone is poor.As a result, it is subsequent using excimer laser annealing process to amorphous silicon membrane into
During row crystallization obtains low-temperature polysilicon film, the amorphous silicon membrane corresponds to different cooling rates everywhere, and then makes
It obtains low-temperature polysilicon film crystal grain and carries out lateral generation, thus can improve and be formed by the uniform of low-temperature polysilicon film
Property.
In the embodiment of the present application, each functional areas 13 include dense area and the cavity in the dense area, wherein
The material density of the more surrounding transition zone 12 of the material density of the dense area is high.Preferably, multiple functional areas 13 are uniform
It is distributed in the transition zone, i.e., the compartment between two neighboring functional areas 13 is away from identical.Here, due to the functional areas 13
Cavity including dense area and in the dense area, thus its be unfavorable for it is thermally conductive, i.e., so that the functional areas 13 it is thermally conductive
The heating conduction of the more surrounding transition zone 12 of performance is poor.
In the embodiment of the present application, each functional areas 13 are spherical structure, the diameters of each functional areas 13 be 200nm~
400nm.The centre of sphere distance of two neighboring functional areas 13 is 1 μm~5 μm, i.e., the compartment between two neighboring functional areas 13 away from for
1 μm~5 μm.
Specifically, the functional areas 13 are formed by following technique: laser 20 is focused in the transition zone 12；It is (high
Isothermal plasma generates shock wave) to form (micro-) explosion in the transition zone 20, obtain multiple functional areas 13.It is preferred that
, lenticule 21 can be set in 12 overhead of transition zone；Then the laser 20 is made to pass through the lenticule 21, thus real
It now focuses in the transition zone 12.Further, the laser 20 is femtosecond laser.Preferably, can be in the transition zone
The array of lenticule 21, i.e., multiple lenticules 21 by ranks arrangement, so as to easily realize laser are arranged in 12 overhead
20 focus in the transition zone 12.
Then, as shown in fig. 6, forming amorphous silicon membrane 14 on the transition zone 12.Here, passing through existing conventional work
Skill forms amorphous silicon membrane 14.
With continued reference to Fig. 6, then, crystalline substance is carried out to the amorphous silicon membrane 14 using excimer laser annealing process (ELA)
Change, i.e., crystallization is carried out to the amorphous silicon membrane 14 using existing common process herein.
Referring to FIG. 7, after carrying out crystallization to the amorphous silicon membrane 14 by excimer laser annealing process (ELA), just
Low-temperature polysilicon film 15 can be obtained.The low-temperature polysilicon film 15 have preferable uniformity, while its also have it is larger
Crystal grain.Here, due to being formed with multiple functional areas 13 spaced apart in transition zone 12, each functional areas 13 are more surrounding
12 heating conduction of transition zone is poor, and it is more thus to obtain low temperature to the progress of amorphous silicon membrane 14 crystallization using excimer laser annealing process
During polycrystal silicon film 15, the amorphous silicon membrane 14 corresponds to different cooling rates everywhere, so that low temperature polycrystalline silicon
15 crystal grain of film carries out lateral generation, thus can improve the uniformity for being formed by low-temperature polysilicon film 15.
Semiconductor structure can be obtained by above-mentioned technique, can accordingly refer to Fig. 7, the semiconductor structure includes: base
Plate 10；The transition zone 12 being formed on the substrate 10；Multiple functional areas 13 spaced apart in the transition zone 12 are formed in,
More surrounding 12 heating conduction of transition zone in each functional areas 13 is poor；And the low temperature polycrystalline silicon being formed on the transition zone 12 is thin
Film 15.
Further, each functional areas 13 include dense area and the cavity in the dense area, wherein the densification
The material density of the more surrounding transition zone 12 of the material density in area is high.Multiple functional areas 13 are uniformly distributed in the transition zone
In 12.Preferably, each functional areas 13 are spherical structure, the diameter of each functional areas 13 is 200nm~400nm；It is two neighboring
The centre of sphere distance of functional areas 13 is 1 μm~5 μm.
Further, the transition zone 12 is silicon oxide layer.The transition zone 12 with a thickness of 400nm~600nm.It is described
Silicon nitride layer 11 is formed between substrate 10 and the transition zone 12.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (8)
1. a kind of preparation method of low-temperature polysilicon film, which is characterized in that the preparation method packet of the low-temperature polysilicon film
It includes:
Substrate is provided；
Transition zone is formed on the substrate；
Multiple functional areas spaced apart, each more surrounding transition zone heating conduction in functional areas are formed in the transition zone
Difference, each functional areas include dense area and the cavity in the dense area, wherein the material density of the dense area is compared with it
The material density of the transition zone of surrounding is high；
Amorphous silicon membrane is formed on the transition zone；
Crystallization is carried out to the amorphous silicon membrane using excimer laser annealing process, obtains low-temperature polysilicon film；
Wherein, multiple functional areas spaced apart are formed in the transition zone by the following method:
Laser is focused in the transition zone；
Explosion is formed in the transition zone, obtains multiple functional areas.
2. the preparation method of low-temperature polysilicon film as described in claim 1, which is characterized in that multiple functional areas are uniformly divided
It is distributed in the transition zone.
3. the preparation method of low-temperature polysilicon film as described in claim 1, which is characterized in that each functional areas are spherical junctions
Structure, the diameter of each functional areas are 200nm~400nm.
4. the preparation method of low-temperature polysilicon film as claimed in claim 3, which is characterized in that the ball of two neighboring functional areas
Heart distance is 1 μm~5 μm.
5. the preparation method of low-temperature polysilicon film as described in claim 1, which is characterized in that laser is focused to the mistake
It crosses in layer and includes:
In the transition zone overhead, lenticule is set；
Femtosecond laser is set to pass through the lenticule into the transition zone.
6. such as the preparation method of low-temperature polysilicon film according to any one of claims 1 to 5, which is characterized in that the mistake
Crossing layer is silicon oxide layer；The transition zone with a thickness of 400nm~600nm.
7. the preparation method of low-temperature polysilicon film as claimed in claim 4, which is characterized in that formed on the substrate
It crosses before layer, the preparation method of the low-temperature polysilicon film further include:
Silicon nitride layer is formed on the substrate；Wherein, the transition zone is located on the silicon nitride layer.
8. a kind of preparation method using such as low-temperature polysilicon film according to any one of claims 1 to 7 is formed by half
Conductor structure, which is characterized in that the semiconductor structure includes: substrate；The transition zone being formed on the substrate；It is formed in institute
Multiple functional areas spaced apart in transition zone are stated, each more surrounding transition zone heating conduction in functional areas is poor, each function
Area includes dense area and the cavity in the dense area, wherein the more surrounding transition of the material density of the dense area
The material density of layer is high；And it is formed in the low-temperature polysilicon film on the transition zone.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102891107A (en) * | 2012-10-19 | 2013-01-23 | 京东方科技集团股份有限公司 | Low temperature polysilicon base plate and manufacturing method thereof |
| CN104392913A (en) * | 2014-10-10 | 2015-03-04 | 京东方科技集团股份有限公司 | Quasi molecule laser annealing apparatus and preparation method of low-temperature polysilicon thin film |
| CN104907713A (en) * | 2015-06-03 | 2015-09-16 | 江苏大学 | Device and method for preparing spherical cavitation bubble |
| CN104966663A (en) * | 2015-05-22 | 2015-10-07 | 信利（惠州）智能显示有限公司 | LTPS film, preparation method thereof, and TFT |
| CN105957805A (en) * | 2016-06-29 | 2016-09-21 | 京东方科技集团股份有限公司 | Manufacturing method of low-temperature polycrystalline silicon thin film, thin film transistor, array substrate and display device |
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| US20030155572A1 (en) * | 2002-02-19 | 2003-08-21 | Min-Koo Han | Thin film transistor and method for manufacturing thereof |
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- 2016-09-29 CN CN201610861310.1A patent/CN106356287B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102891107A (en) * | 2012-10-19 | 2013-01-23 | 京东方科技集团股份有限公司 | Low temperature polysilicon base plate and manufacturing method thereof |
| CN104392913A (en) * | 2014-10-10 | 2015-03-04 | 京东方科技集团股份有限公司 | Quasi molecule laser annealing apparatus and preparation method of low-temperature polysilicon thin film |
| CN104966663A (en) * | 2015-05-22 | 2015-10-07 | 信利（惠州）智能显示有限公司 | LTPS film, preparation method thereof, and TFT |
| CN104907713A (en) * | 2015-06-03 | 2015-09-16 | 江苏大学 | Device and method for preparing spherical cavitation bubble |
| CN105957805A (en) * | 2016-06-29 | 2016-09-21 | 京东方科技集团股份有限公司 | Manufacturing method of low-temperature polycrystalline silicon thin film, thin film transistor, array substrate and display device |
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