CN106328789A - LED chip with good heat dissipation structure and packaging method of LED chip - Google Patents
LED chip with good heat dissipation structure and packaging method of LED chip Download PDFInfo
- Publication number
- CN106328789A CN106328789A CN201610736985.3A CN201610736985A CN106328789A CN 106328789 A CN106328789 A CN 106328789A CN 201610736985 A CN201610736985 A CN 201610736985A CN 106328789 A CN106328789 A CN 106328789A
- Authority
- CN
- China
- Prior art keywords
- led chip
- electrode
- type layer
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 7
- 230000017525 heat dissipation Effects 0.000 title abstract 3
- 238000004806 packaging method and process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 239000006071 cream Substances 0.000 claims description 8
- 238000012856 packing Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an LED chip with a good heat dissipation structure. The LED chip comprises a substrate, wherein an epitaxial layer, an N-type layer, a light-emitting layer and a P-type layer sequentially grow on the substrate; the N-type layer and the P-type layer are provided with electrodes; an N electrode of the N-type layer is arranged on the side wall of the LED chip; and a P electrode of the P-type layer covers the overall upper surface of the P-type layer. An insulating layer is arranged outside the LED chip, and electrode guide holes are formed in the insulating layer corresponding to the N electrode and the P electrode. The invention further discloses a packaging method of the LED chip. Compared with an existing LED chip, the LED chip disclosed by the invention has the advantages that the N electrode is arranged on the side wall of the LED chip, so that the P electrode can cover the overall upper surface of the P-type layer; the insulating layer is integrally opened for the P electrode; the electrode guide holes are large area; and the heat dissipation performance is good.
Description
Technical field
The present invention relates to LED chip field, be specifically related to a kind of LED chip with good radiating structure.
Background technology
With reference to Fig. 1, existing LED chip is typically made up of substrate 1, epitaxial layer 2, N-type layer 3, luminescent layer 4 and P-type layer 5, N
Being provided with N electrode 6 on type layer 3, P-type layer 5 is provided with P electrode 7, LED chip is outside equipped with insulating barrier 8, the corresponding N of insulating barrier 8
Electrode 6 and P electrode 7 offer electrode guide hole 9.Owing to insulating barrier 8 has effect of thermal insulation, LED chip can only be led by electrode
Dispel the heat in hole, but the electrode guide hole of existing LED chip is all opened in upper surface, and the area of electrode guide hole is little, affects LED core
The heat radiation of sheet.
Summary of the invention
In order to solve above-mentioned technical problem, it is an object of the invention to provide a kind of LED core with good radiating structure
Sheet.
The technical solution adopted in the present invention is:
A kind of LED chip with good radiating structure, described LED chip includes substrate, outside described substrate has sequentially generated
Prolonging layer, N-type layer, luminescent layer, P-type layer, described N-type layer and P-type layer are respectively arranged with electrode, the N electrode of described N-type layer is arranged
At LED chip sidewall, the P electrode of described P-type layer covers the whole upper surface of P-type layer.
Further, described LED chip is outside equipped with insulating barrier, and insulating barrier correspondence N electrode and P electrode offer electrode and lead
Hole.
A kind of method for packing for encapsulating above-mentioned LED chip, comprises the following steps:
S1, prepared substrate, substrate is provided with at least two circuit layer；
S2, the P electrode of LED chip is mounted opposite with one of them circuit layer, is coated with each to different between P electrode and circuit layer
Property conducting resinl；
S3, the N electrode of LED chip sidewall use tin cream encapsulation, and N electrode is connected with another circuit layer by tin cream.
Further, in above-mentioned steps S3, elargol also can be used to replace tin cream as encapsulating material.
The invention has the beneficial effects as follows:
Compared with existing LED chip, N electrode is arranged on LED chip sidewall by the LED chip that the present invention provides so that P electrode
Can cover the whole upper surface of P-type layer, insulating barrier is for P electrode entirety perforate, and the area of electrode guide hole is big, perfect heat-dissipating.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in embodiment being described below required for make
Accompanying drawing be briefly described.Obviously, described accompanying drawing is a part of embodiment of the present invention rather than all implements
Example, those skilled in the art is not on the premise of paying creative work, it is also possible to other obtained according to these accompanying drawings set
Meter scheme and accompanying drawing:
Fig. 1 is the structural representation of existing LED chip.
Fig. 2 is the structural representation of the LED chip of the present invention.
Fig. 3 is the structural representation after the LED chip encapsulation of the present invention.
Detailed description of the invention
Below with reference to embodiment and accompanying drawing, the technique effect of design, concrete structure and the generation of the present invention is carried out clearly
Chu, it is fully described by, to be completely understood by the purpose of the present invention, feature and effect.Obviously, described embodiment is this
Bright a part of embodiment rather than all embodiment, based on embodiments of the invention, those skilled in the art is not paying
Other embodiments obtained on the premise of creative work, belong to the scope of protection of the invention.
With reference to Fig. 2, the invention provides a kind of LED chip with good radiating structure, described LED chip includes substrate
1, described substrate 1 sequentially generates epitaxial layer 2, N-type layer 3, luminescent layer 4, P-type layer 5, in described N-type layer 3 and P-type layer 5 respectively
Being provided with electrode, the N electrode 6 of described N-type layer 3 is arranged on LED chip sidewall, and it is whole that the P electrode 7 of described P-type layer 5 covers P-type layer 5
Individual upper surface.Described LED chip is outside equipped with insulating barrier 8, and the corresponding N electrode 6 of described insulating barrier 8 and P electrode 7 offer electrode and lead
Hole 9.N electrode 6 is arranged on LED chip sidewall by the LED chip of the present invention so that P electrode 7 can cover the whole upper table of P-type layer 5
Face, insulating barrier 8 is for the overall perforate of P electrode 7, and the area of electrode guide hole 9 is big, perfect heat-dissipating.
With reference to Fig. 3, present invention also offers the method for packing of above-mentioned LED chip, comprise the following steps: S1, prepared substrate,
At least two circuit layer 20 it is provided with on substrate；S2, by the P electrode 7 of LED chip 10, circuit layer 20 is relative pacifies with one of them
Dress, is coated with anisotropy conductiving glue 30 between P electrode 7 and circuit layer 20；S3, the N electrode 6 of LED chip 10 sidewall use stannum
Cream 40 encapsulates, and N electrode 6 is connected with another circuit layer 20 by tin cream 40.Preferably, in above-mentioned steps S3, also can use elargol
Replace tin cream 40 as encapsulating material.
Above concrete structure and sized data are to be illustrated presently preferred embodiments of the present invention, but present invention wound
Making and be not limited to described embodiment, those of ordinary skill in the art it may also be made that kind on the premise of spirit of the present invention
The equivalent variations planted or replacement, deformation or the replacement of these equivalents are all contained in the application claim limited range.
Claims (3)
1. having the LED chip of good radiating structure, described LED chip includes that substrate (1), described substrate sequentially generate on (1)
Have in epitaxial layer (2), N-type layer (3), luminescent layer (4), P-type layer (5), described N-type layer (3) and P-type layer (5) and be respectively arranged with electricity
Pole, it is characterised in that: the N electrode (6) of described N-type layer (3) is arranged on LED chip sidewall, the P electrode (7) of described P-type layer (5)
Cover P-type layer (5) whole upper surface.
The LED chip with good radiating structure the most according to claim 1, it is characterised in that: described LED chip peripheral hardware
Being equipped with insulating barrier (8), the corresponding N electrode (6) of described insulating barrier (8) and P electrode (7) offer electrode guide hole (9).
3. the method for packing being used for encapsulating the LED chip described in claim 1 or 2, it is characterised in that include following step
Rapid:
S1, prepared substrate, substrate is provided with at least two circuit layer (20)；
S2, the P electrode (7) of LED chip (10) is mounted opposite with one of them circuit layer (20), P electrode (7) and circuit layer
(20) anisotropy conductiving glue (30) it is coated with between；
S3, the N electrode (6) of LED chip (10) sidewall use tin cream (40) or elargol encapsulation, N electrode (6) by tin cream (40) or
Elargol is connected with another circuit layer (20).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610736985.3A CN106328789A (en) | 2016-08-26 | 2016-08-26 | LED chip with good heat dissipation structure and packaging method of LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610736985.3A CN106328789A (en) | 2016-08-26 | 2016-08-26 | LED chip with good heat dissipation structure and packaging method of LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106328789A true CN106328789A (en) | 2017-01-11 |
Family
ID=57790874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610736985.3A Pending CN106328789A (en) | 2016-08-26 | 2016-08-26 | LED chip with good heat dissipation structure and packaging method of LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106328789A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
| CN103943763A (en) * | 2014-03-28 | 2014-07-23 | 晶丰电子封装材料（武汉）有限公司 | Packaging structure and method for flip LED chip |
| CN104143598A (en) * | 2014-07-22 | 2014-11-12 | 李媛 | Electrode structure of substrate-free LED chip |
| CN104241485A (en) * | 2009-12-09 | 2014-12-24 | Lg伊诺特有限公司 | Light emitting apparatus |
-
2016
- 2016-08-26 CN CN201610736985.3A patent/CN106328789A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
| CN104241485A (en) * | 2009-12-09 | 2014-12-24 | Lg伊诺特有限公司 | Light emitting apparatus |
| CN103943763A (en) * | 2014-03-28 | 2014-07-23 | 晶丰电子封装材料（武汉）有限公司 | Packaging structure and method for flip LED chip |
| CN104143598A (en) * | 2014-07-22 | 2014-11-12 | 李媛 | Electrode structure of substrate-free LED chip |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170111 |