CN106328630A - Testing structure and testing method for monitoring isolation performance among different layers of metal layer - Google Patents
Testing structure and testing method for monitoring isolation performance among different layers of metal layer Download PDFInfo
- Publication number
- CN106328630A CN106328630A CN201610984922.XA CN201610984922A CN106328630A CN 106328630 A CN106328630 A CN 106328630A CN 201610984922 A CN201610984922 A CN 201610984922A CN 106328630 A CN106328630 A CN 106328630A
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- test
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- metal wire
- different layers
- isolation performance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
Abstract
The invention provides a testing structure and a testing method for monitoring isolation performance among different metal layers in different layers. The testing structure for monitoring isolation performance among different metal layers in different layers in the invention comprises a first testing end, a first testing metal wire connected with the first testing end, a redundant metal wire in parallel connection with at least one part of the first testing metal wire, a second testing end and a second testing metal wire connected with the second testing end, wherein the testing metal wire comprises multiple parallel metal wires in vertical arrangement with the redundant metal wire; the first testing metal wire and the redundant metal wire are located in a first metal wiring layer, the second testing metal wire is located in the second metal wiring layer, and the first metal wiring layer and the second metal wiring layer are adjacent metal wiring layers.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of monitoring different layers metal interlevel
The test structure of isolation performance and a kind of method of testing monitoring different layers metal interlevel isolation performance.
Background technology
In 55 nanometers and following technique thereof, etching technics is the most sensitive to light transmittance, same process condition, produces in difference
In product during application, probably due to the difference of light transmittance causes the deviation of etch amount, thus cause overetch.Carve at back-end metal
In etching technique, it is found that thus result in the short circuit of different metal interlayer, as shown in the part that circle in Fig. 1 is irised out.For this
Situation, conventional method cannot effective monitoring online, usually after last circuit malfunction, by section could find, the most significantly
Extend new product development cycle, waste bigger man power and material.
It is therefore desirable to provide a kind of monitoring different layers metal interlevel that can pinpoint the problems the most online to isolate
The test structure of performance.
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that a kind of monitoring difference
The test structure of layer metal interlevel isolation performance, wherein can be by monitoring back-end metal interlayer to the test of its electric property
Isolating power, can pinpoint the problems the most online, thus shorten product development cycle.
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that a kind of monitoring different layers metal interlevel isolation performance
Test structure, the first test metal wire connected including: the first test lead and the first test lead and the first test metal wire
The redundancy metal line of at least some of parallel join, the second test lead and be connected with the second test lead second test gold
Belong to line；Wherein, the second test metal wire includes a plurality of parallel metal wire vertically arranged with redundancy metal line；Wherein, first survey
Examination metal wire and redundancy metal line are in the first metal wiring layer, and the second test metal wire is in the second metal wiring layer, and
First metal wiring layer and the second metal wiring layer are adjacent metal wiring layers.
Preferably, a plurality of parallel metal wire bearing of trend exceed described first test metal wire described at least partially
Length successively decrease successively.
Preferably, the voltage swing that the first test lead applies gradually changes to target voltage from 0V, and the second test lead is used for
Detection target current.
Preferably, detect that electric current then judges there is process failure at the second test lead.
Preferably, it is not detected by target current at the second test lead and then judges that technique is qualified.
In order to realize above-mentioned technical purpose, according to the present invention, additionally provide a kind of monitoring different layers metal interlevel isolation
The method of testing of energy, including: first step: form the test structure of monitoring different layers metal interlevel isolation performance；Second step:
The voltage swing applied on the first test lead gradually changes to target voltage from 0V, detects target electricity at the second test lead simultaneously
Stream.
Preferably, the test structure of described monitoring different layers metal interlevel isolation performance includes: the first test lead and first
Test lead connect first test metal wire and first test metal wire at least some of parallel join redundancy metal line,
Second test lead and the second test metal wire being connected with the second test lead；Wherein, the second test metal wire includes and redundancy
The vertically arranged a plurality of parallel metal wire of metal wire；Wherein, the first test metal wire and redundancy metal line are in the first hardware cloth
Line layer, the second test metal wire is in the second metal wiring layer, and the first metal wiring layer and the second metal wiring layer are phases
Adjacent metal wiring layer.
Preferably, a plurality of parallel metal wire bearing of trend exceed described first test metal wire described at least partially
Length successively decrease successively.
Preferably, detect that electric current then judges there is process failure at the second test lead.
Preferably, it is not detected by target current at the second test lead and then judges that technique is qualified.
The invention provides a kind of test structure monitoring different layers metal interlevel isolation performance, wherein can be by it
The test of electric property monitors back-end metal zone isolation ability, can pinpoint the problems the most online, thus shorten
Product development cycle.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete understanding
And its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 schematically shows the electron microscopic of the short circuit of the different metal interlayer caused in back-end metal etching technics
Diagram.
Fig. 2 schematically shows the survey monitoring different layers metal interlevel isolation performance according to the preferred embodiment of the invention
The schematic diagram of examination structure.
Fig. 3 schematically shows the survey monitoring different layers metal interlevel isolation performance according to the preferred embodiment of the invention
The flow chart of method for testing.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.Further, in accompanying drawing, same or like element indicates same or like label.
Detailed description of the invention
In order to make present disclosure more clear and understandable, below in conjunction with specific embodiments and the drawings in the present invention
Appearance is described in detail.
Fig. 2 schematically shows the survey monitoring different layers metal interlevel isolation performance according to the preferred embodiment of the invention
The schematic diagram of examination structure.
As in figure 2 it is shown, monitor the test structure of different layers metal interlevel isolation performance according to the preferred embodiment of the invention
Including: metal wire 10 tested by the first test metal wire 10 and first that the first test lead 100 is connected with the first test lead 100
Redundancy metal line 20, second test lead 200 of at least some of parallel join and be connected with the second test lead 200 second
Test metal wire 30.
Wherein, the second test metal wire 30 includes a plurality of parallel metal wire vertically arranged with redundancy metal line 20 (such as
The parallel parallel metal wire of metal wire 31, second 32 of shown in Fig. 2 first and the 3rd parallel metal wire 33).
Wherein, a plurality of parallel metal wire bearing of trend exceed described first test metal wire 10 described at least partially
Length successively decrease successively.Due to a plurality of parallel metal wire bearing of trend exceed described first test metal wire 10 described at least
The length of a part is successively decreased successively, and point graded, such that it is able to contain different technique weakness.
Wherein, the first test metal wire 10 and redundancy metal line 20 are in the first metal wiring layer, the second test metal wire
30 are in the second metal wiring layer, and the first metal wiring layer and the second metal wiring layer are adjacent metal wiring layers.
Preferably, when test, the voltage swing that the first test lead 100 applies gradually changes to target voltage from 0V, the
Two test leads 200 are used for detecting target current.Detect that electric current then judges there is process failure at the second test lead 200, second
Test lead 200 is not detected by target current and then judges that technique is qualified.
Fig. 3 schematically shows the survey monitoring different layers metal interlevel isolation performance according to the preferred embodiment of the invention
The flow chart of method for testing.
As it is shown on figure 3, monitor the method for testing of different layers metal interlevel isolation performance according to the preferred embodiment of the invention
Including:
First step S1: form the different layers metal interlevel of the monitoring according to the preferred embodiment of the invention isolation described in Fig. 2
The test structure of performance；
Second step S2: the voltage swing applied on the first test lead 100 gradually changes to target voltage from 0V, exists simultaneously
Second test lead 200 detects target current；
Wherein, detect that electric current then judges there is process failure at the second test lead 200, in the second test lead 200 not inspection
Measure target current and then judge that technique is qualified.
The invention provides a kind of test structure monitoring different layers metal interlevel isolation performance, wherein can be by it
The test of electric property monitors back-end metal zone isolation ability, can pinpoint the problems the most online, thus shorten
Product development cycle.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ", " the
Two ", " the 3rd " etc. describe be used only for distinguishing in description each assembly, element, step etc. rather than for representing each
Logical relation between assembly, element, step or ordering relation etc..
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
Technical solution of the present invention is made many possible variations and modification by the technology contents that all may utilize the disclosure above, or is revised as
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
In.
But also it should be understood that the present invention is not limited to specific method described herein, compound, material, system
Making technology, usage and application, they can change.Should also be understood that term described herein is used merely to describe specific
Embodiment rather than be used for limit the scope of the present invention.Must be noted that herein and in claims use
Singulative " one ", " a kind of " and " being somebody's turn to do " include complex reference, unless context explicitly indicates that contrary.Therefore, example
As, the citation to " element " means the citation to one or more elements, and includes known to those skilled in the art
Its equivalent.Similarly, as another example, the citation of " step " or " device " is meaned to one or
Multiple steps or the citation of device, and potentially include secondary step and second unit.Should manage with broadest implication
Solve all conjunctions used.Therefore, word "or" should be understood that definition rather than the logical exclusive-OR with logical "or"
Definition, unless context explicitly indicates that contrary.Structure described herein will be understood as also quoting from the function of this structure
Equivalent.Can be interpreted that the language of approximation should be understood, like that unless context explicitly indicates that contrary.
And, the method for the embodiment of the present invention and/or the realization of system can include manual, automatically or in combination perform selected
Task.And, the real instrument of the embodiment of the method according to the invention and/or system and equipment, available operating system is led to
Cross hardware, software or a combination thereof and realize several selected task.
Claims (10)
1. the test structure monitoring different layers metal interlevel isolation performance, it is characterised in that including: the first test lead and
The redundancy metal of at least some of parallel join of metal wire tested by the first test metal wire and first that one test lead connects
Line, the second test lead and the second test metal wire being connected with the second test lead；Wherein, second test metal wire include with
The vertically arranged a plurality of parallel metal wire of redundancy metal line；Wherein, the first test metal wire and redundancy metal line are in the first gold medal
Belonging to wiring layer, the second test metal wire is in the second metal wiring layer, and the first metal wiring layer and the second metal wiring layer
It it is adjacent metal wiring layer.
The test structure of monitoring different layers metal interlevel isolation performance the most according to claim 1, it is characterised in that a plurality of
The described at least one of length that parallel metal wire exceedes described first test metal wire at bearing of trend is successively decreased successively.
The test structure of monitoring different layers metal interlevel isolation performance the most according to claim 1 and 2, it is characterised in that
The voltage swing applied on first test lead gradually changes to target voltage from 0V, and the second test lead is used for detecting target current.
The test structure of monitoring different layers metal interlevel isolation performance the most according to claim 3, it is characterised in that
Two test leads detect that electric current then judges there is process failure.
The test structure of monitoring different layers metal interlevel isolation performance the most according to claim 3, it is characterised in that
Two test leads are not detected by target current and then judge that technique is qualified.
6. the method for testing monitoring different layers metal interlevel isolation performance, it is characterised in that including:
First step: form the test structure of monitoring different layers metal interlevel isolation performance；
Second step: the voltage swing applied on the first test lead gradually changes to target voltage from 0V, simultaneously in the second test
End detection target current.
The method of testing of monitoring different layers metal interlevel isolation performance the most according to claim 6, it is characterised in that described
The test structure of monitoring different layers metal interlevel isolation performance includes: the first survey that the first test lead and the first test lead connect
Examination metal wire and the first test redundancy metal line of at least some of parallel join of metal wire, the second test lead and with the
The second test metal wire that two test leads connect；Wherein, the second test metal wire includes vertically arranged with redundancy metal line many
The parallel metal wire of bar；Wherein, the first test metal wire and redundancy metal line are in the first metal wiring layer, the second test metal wire
It is in the second metal wiring layer, and the first metal wiring layer and the second metal wiring layer are adjacent metal wiring layers.
The method of testing of monitoring different layers metal interlevel isolation performance the most according to claim 7, it is characterised in that a plurality of
The described at least one of length that parallel metal wire exceedes described first test metal wire at bearing of trend is successively decreased successively.
9. according to the method for testing of the monitoring different layers metal interlevel isolation performance described in claim 6 or 7, it is characterised in that
Detect that electric current then judges there is process failure at the second test lead.
10. according to the method for testing of the monitoring different layers metal interlevel isolation performance described in claim 6 or 7, it is characterised in that
It is not detected by target current at the second test lead and then judges that technique is qualified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610984922.XA CN106328630A (en) | 2016-11-09 | 2016-11-09 | Testing structure and testing method for monitoring isolation performance among different layers of metal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610984922.XA CN106328630A (en) | 2016-11-09 | 2016-11-09 | Testing structure and testing method for monitoring isolation performance among different layers of metal layer |
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| Publication Number | Publication Date |
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| CN106328630A true CN106328630A (en) | 2017-01-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610984922.XA Pending CN106328630A (en) | 2016-11-09 | 2016-11-09 | Testing structure and testing method for monitoring isolation performance among different layers of metal layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117524915A (en) * | 2024-01-08 | 2024-02-06 | 杭州广立微电子股份有限公司 | Grid-shaped winding weak point detection method, device and computer equipment |
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| CN104422870A (en) * | 2013-09-10 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Test structure and test method for micro grooves |
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Cited By (2)
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| CN117524915A (en) * | 2024-01-08 | 2024-02-06 | 杭州广立微电子股份有限公司 | Grid-shaped winding weak point detection method, device and computer equipment |
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Application publication date: 20170111 |