CN106323866A - Method for obtaining friction coefficient between dissimilar materials by using graphene film ball probe - Google Patents
Method for obtaining friction coefficient between dissimilar materials by using graphene film ball probe Download PDFInfo
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- CN106323866A CN106323866A CN201610669049.5A CN201610669049A CN106323866A CN 106323866 A CN106323866 A CN 106323866A CN 201610669049 A CN201610669049 A CN 201610669049A CN 106323866 A CN106323866 A CN 106323866A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N19/00—Investigating materials by mechanical methods
- G01N19/02—Measuring coefficient of friction between materials
Abstract
The invention provides a method for obtaining friction coefficient between dissimilar materials by using a graphene film ball probe. The method comprises the following steps: providing a graphene film ball probe which comprises a cantilever and a needle tip, wherein the needle tip includes a spherical substrate and a graphene layer; providing a substrate, wherein the surface of the substrate is provided with a heterogeneous material layer; allowing the graphene film ball probe to contact the heterogeneous material layer, applying an initial load to the needle tip, under the action of the initial load, rubbing the needle tip on the surface of the heterogeneous material layer to obtain a first group of voltage signal of needle tip lateral torsion, in addition, obtaining a first interlayer friction force between the graphene layer and the heterogeneous material layer through the first group of voltage signals; changing the size of the load to obtain a second group of voltage signal, and obtaining a second interlayer friction force through the second group of voltage signals, and so on, by changing the size of the load again, obtaining the curve of N group of interlayer friction force changing with the load, and obtaining the friction coefficient between the graphene layer and the heterogeneous material layer through the slope of the curve.
Description
Technical field
The present invention relates to a kind of utilization and obtain friction between dissimilar materials for graphene film talent scout's pin of atomic force microscope
The method of coefficient.
Background technology
Friction between the surface and interface of moving component generally can cause the inefficacy of the even parts of wearing and tearing.Component of machine
Abrasion and the energy of friction loss more highlight the realistic meaning of friction, lubrication.Hydrodynamic lubrication material is due to the limitation of itself
Property, easily lost efficacy under the severe rugged environment such as low speed, extreme pressure.The introducing of solid lubrication, breaches the film lubrication limit, in poles such as spaces
Under end occasion, demonstrate huge superiority.For micro electronmechanical (MEMS) system of super hot investment casting, due to the reduction of size,
The gap of friction pair is generally at nanoscale, and the now appearance of nanostructured solid lubricating film, mill drops in the anti-attrition at MEMS system
Field is widely used.
Exploration to Nanotribology is mainly based upon atomic force microscope (AFM), is possible not only to realize nano-grade size
With receive the measurement of the micro-power of cattle level, and the information such as three-dimensional appearance can be obtained, it is achieved for the measurement of process simultaneously.But, by
Under common afm tip is at contact mode, it is easy to abrasion, causes the measurement error of micro-power, it is impossible to obtain storeroom accurately
Coefficient of friction, and superslide state between dissimilar materials (coefficient of friction is less than 0.01) cannot be obtained.
Summary of the invention
In sum, the obtaining of coefficient of friction between a kind of dissimilar materials being obtained in that relatively high measurement accuracy of necessary offer
Access method.
A kind of graphene film talent scout's pin is utilized to obtain the method for coefficient of friction between dissimilar materials, including: a Graphene is provided
Film talent scout's pin, including a cantilever and a needle point, wherein, described needle point includes a spherical substrate and a graphene layer, described graphite
Alkene layer is coated on the surface of described spherical substrate and directly contacts with described spherical substrate, is pure graphite in described graphene layer
Alkene；Thering is provided a substrate, the surface of described substrate to have an extrinsic material, the material of described extrinsic material is hexagonal boron nitride
Or molybdenum bisuphide；Graphene film talent scout's pin is contacted extrinsic material, applies initial load to needle point, and in initial load effect
Under, rub back and forth needle point on extrinsic material surface, it is thus achieved that first group of voltage signal of needle point lateral twisting, and by first group
Voltage signal obtains the first interfacial friction between graphene layer and extrinsic material；Change the size of load, again different
The surface of material layer rubs needle point back and forth, it is thus achieved that second group of voltage signal, and obtains the second layer by second group of voltage signal
Between frictional force；By that analogy, by again changing the size of load, it is thus achieved that N group interfacial friction, wherein N >=2, and then N is obtained
Group interfacial friction, with the curve of load change, obtains between graphene layer and extrinsic material by analyzing the described slope of curve
Coefficient of friction.
Described needle point is perpendicular to the bearing of trend of described cantilever relative to the frictional direction of extrinsic material.
Coefficient of friction between described graphene layer and extrinsic material is 0.0025.
Described graphene film talent scout's pin and described extrinsic material are arranged in liquid, and described graphene film talent scout's pin is in institute
The mantle friction stating extrinsic material obtains coefficient of friction.
Described graphene layer includes that multi-layer graphene thin film, the number of plies of described graphene film are 3-10 layer, and thickness is 1 to receive
Rice is to 3 nanometers.
Described graphene layer is a pure graphene-structured, contains only Graphene and do not contain sense in described graphene layer
Group.
The material of described spherical substrate is silicon oxide, and described graphene layer is directly grown in the outer surface of described silicon oxide.
A diameter of 5 microns to 10 microns of described spherical substrate.
Compared with prior art, the acquisition methods of the coefficient of friction that the present invention provides, by being directly coated with Graphene
Carry out rubbing on the surface of tradition needle point with dissimilar materials so that graphene film talent scout's needle set has the wear resistance of excellence, energy
Enough reduce the adhesion between probe and other surfaces, and there is extraordinary moisture resistance performance, so that utilize this stone
When ink alkene film talent scout's pin obtains dissimilar materials interlayer frictional force, having the highest certainty of measurement and service life, adaptability is good, energy
Enough obtain the state of superslide.
Accompanying drawing explanation
The structural representation of the graphene film talent scout's pin for atomic force microscope that Fig. 1 provides for the embodiment of the present invention.
Fig. 2 is the electromicroscopic photograph of the graphene film talent scout's pin described in Fig. 1.
Fig. 3 is the electromicroscopic photograph of graphene layer in the graphene film talent scout's pin described in Fig. 1.
Fig. 4 provide for the embodiment of the present invention utilize graphene film talent scout's pin obtain coefficient of friction between dissimilar materials signal
Figure.
The graphene film talent scout's pin recorded under the different loads that Fig. 5 provides for the embodiment of the present invention obtains and rubs between dissimilar materials
Wipe the schematic diagram of coefficient.
Main element symbol description
Graphene film talent scout's pin 100
Cantilever 10
Needle point 20
Spherical substrate 21
Graphene layer 22
Substrate 200
Extrinsic material 30
Specific examples below will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Detailed description of the invention
The graphene film talent scout's pin for atomic force microscope that the present invention provides is described in detail below with reference to accompanying drawing, and
This graphene film talent scout's pin is utilized to obtain the method for coefficient of friction between dissimilar materials.For convenience of describing, first the present invention introduces use
Graphene film talent scout's pin in atomic force microscope.
See also Fig. 1 to Fig. 3, graphene film talent scout's pin 100 that the embodiment of the present invention provides include a cantilever 10 and
Needle point 20, described needle point 20 includes spherical substrate 21 and a graphene layer 22, and described spherical substrate 21 is a chondritic, institute
State graphene layer 22 and be coated on the whole surface of described spherical substrate 21.
Concrete, that described spherical substrate 21 is formed for homogenous material spherical entity structure.The material of described spherical substrate 21
Material can be metal, nonmetal, high molecular polymer etc., as long as Graphene can be carried and for hard material, and such as gold, oxygen
The hard materials such as SiClx, carborundum, silicon nitride, polystyrene, can select as required.In the present embodiment, described ball
The material of shape substrate 21 is silicon oxide, and the most described graphene layer 22 can directly be coated on described silicon oxide surface, and with described
Spherical substrate 21 directly contacts.Concrete, described graphene layer 22 can be directly grown in the surface of described spherical substrate 21, thus
Directly contact with the surface of described spherical substrate 21.Being shaped as of described spherical substrate 21 is spherical, described spherical substrate 21 straight
Footpath can be that 10 nanometers are to 100 microns.Preferably, a diameter of 5 microns to 10 microns of described spherical substrate 21 so that described needle point
20 are easier to preparation, and are more beneficial for the measurement of follow-up interfacial friction.It is appreciated that the shape of described spherical substrate 21 also
Can be elliposoidal, and one of them axis of symmetry of described ellipsoid is parallel to the bearing of trend of described cantilever 10.
Described graphene layer 22 includes that at least one single-layer graphene film, the number of plies of described graphene layer 22 can be 3-10
Layer, the thickness of described graphene layer 22 can be 1 nanometer to 3 nanometers so that described graphene layer 22 is easier to preparation, and subtract
The influence of crust deformation of little probe.Described graphene film is a continuous print monolayer carbon atomic layer, i.e. single-layer graphene, and thickness is 0.34
Nanometer.Preferably, described Graphene once 22 the number of plies less than or equal to 4 layers, on the one hand can reduce cost, reduce preparation difficulty,
On the other hand, stablizing of graphene layer 22 in follow-up friction process can be kept, effectively prevent the number of plies from too much causing friction process
In come off.Further, described graphene layer 22 is a pure graphene-structured, and described pure graphene-structured refers to described Graphene
Layer 22 contains only Graphene, further, described graphene layer 22 contains only carbon atom, without other impurity and functional group,
It is thus possible to reduce the impact of other impurity, improve follow-up certainty of measurement.Further, it is one pure due to described graphene layer 22
Graphene-structured, the most described graphene layer 22 can firmly be coated on the surface of described spherical substrate 21, it is possible to is prevented effectively from
Coming off during follow-up measurement.
Described graphene layer 22 continuous print is coated on the surface of described spherical substrate 21, and straight with described spherical substrate 21
Contact, thus the spherical gapless cladding of substrate 21 is got up.Described needle point 20 is attached at one end of described cantilever 10,
And the shape of described needle point 20 is all spherical.Concrete, described needle point 20 can be attached at institute by a tack coat (not shown)
State the surface of cantilever 10.Due in needle point 20, the surface being coated on spherical substrate 21 of described graphene layer 22 entirety, therefore institute
State the graphene layer 22 intimate surface contact by tack coat with described cantilever 10, thus needle point 20 entirety is firmly fixed to
One end of described cantilever 10.
Referring to Fig. 4, the described graphene film talent scout's pin 100 that utilizes that the present invention provides obtains coefficient of friction between dissimilar materials
Method comprise the steps:
Step S10 a, it is provided that substrate 200, the surface of described substrate 200 has an extrinsic material 30；
Step S20, contacts extrinsic material 30 by graphene film talent scout's pin 100, applies initial load to needle point 20, and
Under initial load effect, rub back and forth needle point 20 on extrinsic material 30 surface, it is thus achieved that first group of electricity of needle point 20 lateral twisting
Pressure signal, and obtain the first interfacial friction by first group of voltage signal；
Step S30, changes the size of load, and rub back and forth needle point 20 again on the surface of extrinsic material 30, it is thus achieved that the
Two groups of voltage signals, and obtain the second interfacial friction by second group of voltage signal；
Step S40, by that analogy, by again changing the size of load, it is thus achieved that N group interfacial friction, N >=2, and obtains
N group frictional force, with the curve of load change, obtains between graphene layer and extrinsic material 30 by analyzing the described slope of curve
Coefficient of friction.
In step slo, the surface of described substrate 200 is a plane, and described extrinsic material 30 entirety is attached at described
On the surface of substrate 200.Described " extrinsic material " refers to that the material of described extrinsic material is different from described graphene layer 22,
Described extrinsic material 30 material can be the one of molybdenum bisuphide, hexagonal boron nitride, and the monoatomic layer of described extrinsic material
In be two dimension six-membered ring structure.Described extrinsic material 30 entirety is attached at the surface of described substrate 200, described heterogeneous material
The thickness of the bed of material 30 does not limits, as long as ensureing that the surface entirety of described substrate 200 can be covered by described extrinsic material 30.
In step S20, described graphene film talent scout's pin 100 can basis relative to the frictional direction of extrinsic material 30
Needs select, as long as guaranteeing to get needle point 20 with the frictional force that is subject in the friction of extrinsic material 30 i.e.
Can.Concrete, if the bearing of trend of cantilever 10 is X-direction, it is perpendicular to X-direction and to be parallel to the direction on substrate 200 surface be Y side
To, the frictional direction of the most described needle point 20 and X-direction form an angle theta, and described θ is less than or equal to 90 degree more than 0 degree.Preferably,
The frictional direction of described needle point 20 is perpendicular to the frictional direction of described cantilever 10, and the angle theta i.e. formed with X-direction is 90 degree, from
And can be more prone to get the signal of telecommunication that the lateral twisting that needle point 20 is subject to produces, and then convenient being rubbed
Power, and ensure the accuracy of subsequent calculations and result of calculation.It can be voltage signal that described needle point 20 reverses the signal of telecommunication produced
Or current signal, can obtain, by a magnetic levitation equipment (not shown), the voltage signal that needle point 20 lateral twisting produces, and count
Calculate the size of the frictional force obtained between needle point 20 and extrinsic material 30, namely between graphene layer 22 and extrinsic material 30
The size of the first interfacial friction.
The computational methods of described frictional force may utilize frictional force ring.It is past that frictional force ring refers to that afm scan obtains
Two sections of multiple force signals, the computational methods of frictional force are to subtract each other the force signal of drag ring divided by 2.
In step S30 to step S40, by changing load, and then change between needle point 20 and extrinsic material 30
The size of frictional force.The voltage signal produced by exploratory probe lateral twisting again, can be by being calculated needle point 20 with different
Second interfacial friction big between the size of frictional force, namely graphene layer 22 and extrinsic material 30 between material layer 30
Little.Can tentatively be obtained between graphene layer 22 and extrinsic material 30 by the first interfacial friction and the second interfacial friction
The size of coefficient of friction.Further, for obtaining more accurate result, the size of load can be varied multiple times, and then detection obtains
Organize voltage signal more, thus obtain the curve organizing interfacial friction with load change more.Oblique by analyzing frictional force-curve of load
Rate, i.e. can get coefficient of friction.
Refer to Fig. 5, the present embodiment uses hexagonal boron nitride as extrinsic material 30, measure under different loads
Frictional force between graphene film talent scout's pin and hexagonal boron nitride.From in figure, when using graphene film talent scout's pin and six sides
Boron nitride is to when rubbing, it is thus achieved that coefficient of friction be 0.0025, i.e. reached superslide state.
Further, the stability of described graphene film talent scout's pin is tested by the present embodiment further.Described graphite
Alkene film talent scout's pin rubs at the same position of hexagonal boron nitride repeatedly with the contact stress of 1Gpa, superslide after two hours
Just lost efficacy, it was demonstrated that described graphene film talent scout is capable of stable superslide state for hexagonal boron nitride.It addition, when this position
Superslide state lost efficacy after, be still obtained in that superslide when described graphene film talent scout's pin is moved to new position, thus demonstrate,prove
Bright described graphene film talent scout's pin especially needle point has the most excellent wear resistance.
It addition, the moisture resistance performance of described graphene film talent scout's pin is tested by the present embodiment further.By inciting somebody to action
Steam and nitrogen are passed through environmental chamber with predetermined ratio, obtain different humidity, the moisture resistance performance to graphene film talent scout's pin
Test.Described graphene film talent scout's pin, in the environment that humidity is 31.8%, is 1 micron relative to the displacement of graphite
During to 10 microns, all it is able to maintain that superslide state；It addition, be up to 51% in humidity between described graphene film talent scout's pin and graphite
Time, remain able to maintain superslide state, thus prove that described graphene film talent scout's needle set has extraordinary moisture resistance, and at height
Still there is in the case of humidity the wear resistance of excellence.
The present invention provides and utilizes graphene film talent scout's pin to obtain the method for coefficient of friction between dissimilar materials, by by Graphene
Directly it is coated on the surface of tradition needle point so that graphene film talent scout's needle set has the wear resistance of excellence, it is possible to reduce probe
And the adhesion between other surfaces, and there is extraordinary moisture resistance performance, so that utilize this graphene film talent scout
When interfacial friction between dissimilar materials measured by pin, having the highest certainty of measurement and service life, adaptability is good, and energy
Enough and reach the state of superslide between extrinsic material.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic executed in example is all described, but, as long as the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope that this specification is recorded.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed, but also
Therefore the restriction to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that, for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement, these broadly fall into the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (8)
1. utilize graphene film talent scout's pin to obtain a method for coefficient of friction between dissimilar materials, including:
There is provided graphene film talent scout's pin, including a cantilever and a needle point, it is characterised in that described needle point includes a spherical substrate
And a graphene layer, described graphene layer is coated on the surface of described spherical substrate and directly contacts with described spherical substrate, institute
State in graphene layer as pure Graphene；
Thering is provided a substrate, the surface of described substrate to have an extrinsic material, the material of described extrinsic material is six side's nitridations
Boron or molybdenum bisuphide；
Graphene film talent scout's pin is contacted extrinsic material, applies initial load to needle point, and under initial load effect, different
Material layer surface rubs needle point back and forth, it is thus achieved that first group of voltage signal of needle point lateral twisting, and is believed by first group of voltage
Number obtain the first interfacial friction between graphene layer and extrinsic material；
Changing the size of load, rub back and forth needle point again on the surface of extrinsic material, it is thus achieved that second group of voltage signal, and leads to
Cross second group of voltage signal and obtain the second interfacial friction；
By that analogy, by again changing the size of load, it is thus achieved that N group interfacial friction, wherein N >=2, and then N group layer is obtained
Between frictional force with the curve of load change, obtain the friction system between graphene layer and extrinsic material by the described slope of curve
Number.
2. the method obtaining coefficient of friction as claimed in claim 1, it is characterised in that described needle point is relative to extrinsic material
Frictional direction be perpendicular to the bearing of trend of described cantilever.
3. the method obtaining coefficient of friction as claimed in claim 1, it is characterised in that described graphene layer and extrinsic material
Between coefficient of friction be 0.0025.
4. the as claimed in claim 1 method obtaining coefficient of friction, it is characterised in that described graphene film talent scout's pin and described
Extrinsic material is arranged in liquid, and described graphene film talent scout's pin obtains friction system in the mantle friction of described extrinsic material
Number.
5. the method obtaining coefficient of friction as claimed in claim 1, it is characterised in that described graphene layer includes Multi-layer graphite
Alkene thin film, the number of plies of described graphene film is 3-10 layer, and thickness is that 1 nanometer is to 3 nanometers.
6. the method obtaining coefficient of friction as claimed in claim 1, it is characterised in that described graphene layer is a pure Graphene
Structure, contains only Graphene and does not contains functional group in described graphene layer.
7. the method obtaining coefficient of friction as claimed in claim 1, it is characterised in that the material of described spherical substrate is oxidation
Silicon, described graphene layer is directly grown in the outer surface of described silicon oxide.
8. the as claimed in claim 1 method obtaining coefficient of friction, it is characterised in that described spherical substrate a diameter of 5 micro-
Rice is to 10 microns.
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| CN109030870A (en) * | 2018-07-19 | 2018-12-18 | 清华大学 | Two-dimensional layer material wraps up atomic force microscope probe and preparation method thereof and application |
| CN109299580A (en) * | 2018-11-23 | 2019-02-01 | 兰州理工大学 | A kind of research method of the substrate support rigidity gradient variation to friction effects |
| CN109444475A (en) * | 2019-01-18 | 2019-03-08 | 兰州理工大学 | The research method that frictional force is contributed in a kind of probe thin slice and each contact zone of substrate |
| CN109979768A (en) * | 2019-03-26 | 2019-07-05 | 北京清正泰科技术有限公司 | RF mems switch based on superslide structure |
| CN110488044A (en) * | 2019-07-29 | 2019-11-22 | 清华大学 | A method of realizing superslide between the AFM probe and graphite surface of taper needle point |
| CN110749752A (en) * | 2019-10-12 | 2020-02-04 | 清华大学 | Two-dimensional material probe for atomic force microscope and preparation method and application thereof |
| CN111439746A (en) * | 2020-05-20 | 2020-07-24 | 东华大学 | Preparation method of single-layer graphene folding structure with controllable torsion angle |
| CN111847435A (en) * | 2020-06-28 | 2020-10-30 | 深圳清华大学研究院 | Method for adjusting friction coefficient of two-dimensional material |
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| CN109299580A (en) * | 2018-11-23 | 2019-02-01 | 兰州理工大学 | A kind of research method of the substrate support rigidity gradient variation to friction effects |
| CN109299580B (en) * | 2018-11-23 | 2021-07-27 | 兰州理工大学 | Research method for influence of gradient change of substrate support rigidity on friction force |
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| GB2601685B (en) * | 2019-07-29 | 2023-11-01 | Univ Tsinghua | Method for Realizing Superlubricity between AFM Probe with Conical Tip and Graphite Surface |
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| CN111439746A (en) * | 2020-05-20 | 2020-07-24 | 东华大学 | Preparation method of single-layer graphene folding structure with controllable torsion angle |
| CN111439746B (en) * | 2020-05-20 | 2021-07-23 | 东华大学 | Preparation method of single-layer graphene folding structure with controllable torsion angle |
| CN111847435A (en) * | 2020-06-28 | 2020-10-30 | 深圳清华大学研究院 | Method for adjusting friction coefficient of two-dimensional material |
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